JP2000353810A5 - - Google Patents
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- Publication number
- JP2000353810A5 JP2000353810A5 JP2000085251A JP2000085251A JP2000353810A5 JP 2000353810 A5 JP2000353810 A5 JP 2000353810A5 JP 2000085251 A JP2000085251 A JP 2000085251A JP 2000085251 A JP2000085251 A JP 2000085251A JP 2000353810 A5 JP2000353810 A5 JP 2000353810A5
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- Japan
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000085251A JP4578611B2 (ja) | 1999-03-26 | 2000-03-24 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11-84989 | 1999-03-26 | ||
| JP8498999 | 1999-03-26 | ||
| JP2000085251A JP4578611B2 (ja) | 1999-03-26 | 2000-03-24 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010130833A Division JP2010263225A (ja) | 1999-03-26 | 2010-06-08 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000353810A JP2000353810A (ja) | 2000-12-19 |
| JP2000353810A5 true JP2000353810A5 (ja) | 2007-05-24 |
| JP4578611B2 JP4578611B2 (ja) | 2010-11-10 |
Family
ID=26425953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000085251A Expired - Fee Related JP4578611B2 (ja) | 1999-03-26 | 2000-03-24 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4578611B2 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8421135B2 (en) | 2000-12-11 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and manufacturing method thereof |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4741569B2 (ja) * | 2000-12-21 | 2011-08-03 | 株式会社半導体エネルギー研究所 | 発光装置 |
| SG111923A1 (en) | 2000-12-21 | 2005-06-29 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
| JP4067819B2 (ja) * | 2000-12-21 | 2008-03-26 | 株式会社半導体エネルギー研究所 | 発光装置 |
| US6897477B2 (en) | 2001-06-01 | 2005-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and display device |
| JP3810725B2 (ja) | 2001-09-21 | 2006-08-16 | 株式会社半導体エネルギー研究所 | 発光装置及び電子機器 |
| US7232714B2 (en) | 2001-11-30 | 2007-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2014236183A (ja) | 2013-06-05 | 2014-12-15 | 株式会社東芝 | イメージセンサ装置及びその製造方法 |
| JP2016021587A (ja) * | 2015-09-08 | 2016-02-04 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2017037340A (ja) * | 2016-10-26 | 2017-02-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2985253B2 (ja) * | 1990-08-07 | 1999-11-29 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| JP3483581B2 (ja) * | 1991-08-26 | 2004-01-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JPH1117187A (ja) * | 1997-06-20 | 1999-01-22 | Fujitsu Ltd | 薄膜トランジスタの製造方法 |
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2000
- 2000-03-24 JP JP2000085251A patent/JP4578611B2/ja not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8421135B2 (en) | 2000-12-11 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and manufacturing method thereof |