JP2000339764A - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JP2000339764A JP2000339764A JP11152995A JP15299599A JP2000339764A JP 2000339764 A JP2000339764 A JP 2000339764A JP 11152995 A JP11152995 A JP 11152995A JP 15299599 A JP15299599 A JP 15299599A JP 2000339764 A JP2000339764 A JP 2000339764A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- recording
- zns
- recording layer
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、照射するレーザ光
等の光線の出力に応じて非晶質又は結晶質の2状態に相
変化する記録層を有し、前記2状態における記録ビット
の光の反射率差を利用してデジタル情報を記録、再生す
るものであって、書き換え可能な光記録媒体に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a recording layer having a phase change between an amorphous state and a crystalline state according to the output of a light beam such as a laser beam to be irradiated. The present invention relates to a rewritable optical recording medium which records and reproduces digital information by utilizing a difference in reflectance of the optical recording medium.
【0002】[0002]
【従来の技術】従来の相転移を利用した書き換え可能な
光記録媒体M(以下、媒体Mという)の部分断面図を図
1に示す。同図において、1はポリカーボネート等の樹
脂、ガラス等から成るディスク状の基板、2はZnS−
SiO2 等から成る第1透明誘電体層、3はGeTe等
から成り非晶質又は結晶質の2状態に相変化可能な記録
層、4はZnS−SiO2 等から成る第2透明誘電体
層、5はAl等の高反射率材料から成る反射層である。2. Description of the Related Art FIG. 1 is a partial sectional view of a conventional rewritable optical recording medium M utilizing a phase transition (hereinafter referred to as a medium M). In the figure, 1 is a disk-shaped substrate made of resin such as polycarbonate, glass or the like, and 2 is ZnS-
A first transparent dielectric layer made of SiO 2 or the like, a recording layer made of GeTe or the like and capable of changing a phase into two states of amorphous or crystalline, and a fourth transparent dielectric layer made of ZnS—SiO 2 or the like Reference numerals 5 and 5 are reflection layers made of a high-reflectance material such as Al.
【0003】このような書き換え可能な媒体Mにおい
て、記録層3は結晶質状態と非結晶質状態とで光の反射
率が異なっており、一般的に結晶質状態の方が反射率が
高いものが多い。そして、媒体Mの動作原理は以下のよ
うなものである。まず、記録層3の全ての記録ビットを
結晶化しておく。即ち、反射率が高い状態とし初期化し
ておく。情報の書込には、媒体Mを回転させながら2種
のレーザパワーにパルス変調されたレーザビームを照射
し、高出力(10数〜20mW程度)のレーザビームが
照射された記録ビットでは記録層3材料の融点よりも高
温になり、溶融して急冷され非晶質化する。一方、中出
力(5〜10mW程度)のレーザビームが照射された記
録ビットでは、前記融点以下の結晶化可能温度範囲まで
昇温された後、冷却され結晶質状態になる。In such a rewritable medium M, the recording layer 3 has a different light reflectivity between the crystalline state and the non-crystalline state, and generally has a higher reflectivity in the crystalline state. There are many. The operating principle of the medium M is as follows. First, all the recording bits of the recording layer 3 are crystallized. That is, initialization is performed in a state where the reflectance is high. For writing information, a laser beam pulse-modulated to two types of laser power is irradiated while rotating the medium M, and a recording layer is irradiated with a recording bit irradiated with a high-power (about 10 to 20 mW) laser beam. The material becomes higher than the melting points of the three materials, and is melted and rapidly cooled to become amorphous. On the other hand, a recording bit irradiated with a laser beam of medium output (about 5 to 10 mW) is heated to a crystallization-possible temperature range equal to or lower than the melting point, and then cooled to a crystalline state.
【0004】上記の書込動作は、古い情報が残留してい
る上から直接行うことができ、各記録ビットは新しい情
報に対応した状態に変化する。つまり、重ね書きによる
オーバーライト(Over Writeで、以下、OWと略す)が
可能である。再生は、読取用の低出力(1〜2mW程
度)のレーザビームを照射して、高反射率の結晶質相か
低反射率の非晶質相かを判読し、0,1のデジタル情報
として読み取る。[0004] The above-mentioned writing operation can be performed directly after the old information remains, and each recording bit changes to a state corresponding to the new information. That is, overwriting by overwriting (Over Write, hereinafter abbreviated as OW) is possible. Reproduction is performed by irradiating a low-output (about 1 to 2 mW) laser beam for reading to determine whether the phase is a crystalline phase having a high reflectivity or an amorphous phase having a low reflectivity. read.
【0005】上記記録層3の材料としては、Te,S
e,Sのうちの1元素を含む材料のカルコゲン化物が適
しており、カルコゲン化物は非晶質になりやすいという
特徴がある。具体的には、GeTe系材料、GeSbT
e系材料、InSeTlCo系材料、InSbTe系材
料等がある。The material of the recording layer 3 is Te, S
A chalcogenide of a material containing one element of e and S is suitable, and the chalcogenide has a feature that it easily becomes amorphous. Specifically, GeTe-based materials, GeSbT
e-based materials, InSeTlCo-based materials, InSbTe-based materials, and the like.
【0006】そして、従来このような相変化型の媒体M
において、有機高分子から成る盤状又はテープ状の基体
と、基体のピットないし溝を形成した面に設けられN
i,Cr,Fe,Co等の少なくとも一種及びAl,S
n,Cu等の少なくとも一種よりなる合金の被膜とを備
えたことにより、境界面における反応が少なく安定でか
つS/N比の良好な情報記録担体が提案されている(従
来例1:特開昭57−20933号公報参照)。Conventionally, such a phase change type medium M
And a disk-shaped or tape-shaped substrate made of an organic polymer and N
i, Cr, Fe, at least one of Co, Al, S
An information recording carrier has been proposed which has a coating with at least one kind of alloy such as n, Cu, etc., has less reaction at the interface, and has a good S / N ratio (conventional example 1: JP Reference is made to JP-A-57-20933).
【0007】また、従来例2として、基板と、相変化記
録層と、基板と相変化記録層の間に設けられた第1の誘
電体保護層と、相変化記録層上に設けられた第2の誘電
体保護層と、第2の誘電体保護層上に設けられた金属反
射層と、更に金属反射層上に設けられた樹脂保護層とを
有し、金属反射層は、Alからなる第1の金属層と、N
i,Ti,Co,Cr,Siから選択された少なくとも
1種からなる第2の金属層と、第1及び第2の金属層の
境界部分に形成された第1の金属層及び第2の金属層の
構成元素が拡散して形成された拡散合金層とを有するこ
とにより、耐酸化性が良好な反射層を備え、かつ特性が
安定した相変化型情報記録媒体が公知である(従来例
2:特開平8−96413号公報参照)。Further, as a second conventional example, a substrate, a phase change recording layer, a first dielectric protection layer provided between the substrate and the phase change recording layer, and a first dielectric protection layer provided on the phase change recording layer. A second dielectric protection layer, a metal reflection layer provided on the second dielectric protection layer, and a resin protection layer further provided on the metal reflection layer, wherein the metal reflection layer is made of Al. A first metal layer and N
a second metal layer made of at least one selected from the group consisting of i, Ti, Co, Cr, and Si; and a first metal layer and a second metal formed at a boundary between the first and second metal layers. A phase change type information recording medium having a reflection layer having good oxidation resistance and having stable characteristics by having a diffusion alloy layer formed by diffusing constituent elements of the layer is known (Conventional Example 2). : JP-A-8-96413).
【0008】[0008]
【発明が解決しようとする課題】しかしながら、上記従
来例2のように反射層をAl単体から構成する場合は良
好な光反射特性及び耐熱性等の熱特性を有しているが、
従来例1の如く酸化防止を目的としてAlに添加物を含
有させると、光反射特性及び熱特性が劣化し易いという
問題点があった。また、酸化防止性等の化学的安定性と
光反射特性及び熱特性とを両立させるような、Alと添
加物の組成比については、従来例1には全く開示されて
いない。However, when the reflection layer is made of Al alone as in the above-mentioned conventional example 2, it has good light reflection characteristics and thermal characteristics such as heat resistance.
When an additive is added to Al for the purpose of preventing oxidation as in Conventional Example 1, there has been a problem that light reflection characteristics and thermal characteristics are likely to deteriorate. Further, Conventional Example 1 does not disclose a composition ratio of Al and an additive that makes chemical stability such as antioxidant properties compatible with light reflection characteristics and thermal characteristics.
【0009】従って、本発明は上記事情に鑑みて完成さ
れたものであり、その目的は、酸化防止性等の化学的安
定性と光反射特性及び熱特性に優れ、その結果再生時の
C/N比、ビットエラーレート(Bit Error Rate:BE
R)、記録ビット端部のジッター特性を向上させること
にある。Accordingly, the present invention has been completed in view of the above circumstances, and an object of the present invention is to provide excellent chemical stability such as antioxidant properties, light reflection properties and thermal properties, and as a result, C / C N ratio, Bit Error Rate (BE)
R) To improve the jitter characteristics at the end of the recording bit.
【0010】[0010]
【課題を解決するための手段】本発明の光記録媒体は、
透明基板上に、照射する光の出力に応じて非晶質又は結
晶質に相変化する記録層と、Al及びCoを主成分とし
Alを85.0〜99.5原子%、Coを0.5〜1
5.0原子%含有する反射層とを順次積層したことを特
徴とする。The optical recording medium of the present invention comprises:
A recording layer on a transparent substrate, which changes its phase to amorphous or crystalline depending on the output of light to be irradiated; 85.0 to 99.5 atom% of Al and Co of 0.1 to 99.5 atomic% with Al and Co as main components. 5-1
A reflective layer containing 5.0 atomic% is sequentially laminated.
【0011】本発明は、上記構成により、Al及びCo
の組成比範囲を特定することで、酸化防止性等の化学的
安定性と光反射特性及び熱特性とが共に優れ、その結果
再生時のC/N比、BER、ジッター特性等が向上す
る。即ち、比較的融点の低いAlに、Alよりも高融点
のCoを所定量添加することで、高出力のレーザを照射
しても耐熱性にきわめて優れており、また耐食性も向上
する。その結果、高反射特性を維持して熱特性が向上し
かつ高い酸化防止性を有し、化学的に安定な反射層とな
る為、繰り返し記録再生に対する耐久性も大幅に向上す
る。According to the present invention, Al and Co
By specifying the composition ratio range, the chemical stability such as antioxidant property, the light reflection characteristic and the thermal characteristic are both excellent, and as a result, the C / N ratio, BER, jitter characteristic and the like at the time of reproduction are improved. That is, by adding a predetermined amount of Co, which has a higher melting point than Al, to Al having a relatively low melting point, heat resistance is extremely excellent even when a high-output laser is irradiated, and corrosion resistance is also improved. As a result, the thermal characteristics are improved while maintaining the high reflection characteristics, the anti-oxidation property is high, and a chemically stable reflection layer is obtained. Therefore, the durability against repeated recording and reproduction is greatly improved.
【0012】[0012]
【発明の実施の形態】本発明の媒体の基本的な層構成は
図1と同様であり、同図において、1はポリカーボネー
ト、ポリオレフィン、エポキシ樹脂、アクリル樹脂、ガ
ラス、樹脂層を表面に形成した強化ガラス、透光性セラ
ミック等から成るディスク状の透明基板、2はZnS−
SiO2 等から成る第一透明誘電体層、3は相変化型の
記録層、4はZnS−SiO2 等から成る第二透明誘電
体層、5はAl及びCoを主成分とする反射層である。BEST MODE FOR CARRYING OUT THE INVENTION The basic layer structure of the medium of the present invention is the same as that shown in FIG. 1. In FIG. 1, reference numeral 1 denotes a polycarbonate, polyolefin, epoxy resin, acrylic resin, glass, resin layer formed on the surface. Disc-shaped transparent substrate made of tempered glass, translucent ceramic, etc., 2 is ZnS-
A first transparent dielectric layer made of SiO 2 or the like, 3 is a phase change type recording layer, 4 is a second transparent dielectric layer made of ZnS—SiO 2 or the like, 5 is a reflection layer mainly containing Al and Co. is there.
【0013】本発明において、記録層4はGeTe、G
eSbTe、InSeTlCo、InSbTe等のカル
コゲン化物から成る材料がよく、なかでもGeTe、G
eSbTeが書き換え可能回数が大きく、結晶化する際
に短時間で結晶化が可能であり、非晶質状態の安定性も
高いという点で好ましい。In the present invention, the recording layer 4 is made of GeTe, G
Materials made of chalcogenides such as eSbTe, InSeTlCo, InSbTe, etc. are preferable, and GeTe, G
eSbTe is preferable in that it can be rewritten a large number of times, can be crystallized in a short time when crystallized, and has high stability in an amorphous state.
【0014】また、Gea Sbb Tec (a+b+c=
100原子%)とした場合、5at(原子)%≦a≦7
0at%がよく、a<5at%では結晶化速度が遅く、
70at%<aでは非晶質状態が不安定になる。0at
%≦b≦50at%がよく、50at%<bでは非晶質
状態が不安定になる。40at%≦c≦70at%がよ
く、c<40at%では結晶化温度が高くなりすぎ、7
0at%<cのときも結晶化温度が高くなりすぎる。ま
た、記録層3の厚さは5〜500nmがよく、5nm未
満では結晶質状態と非晶質状態間の反射率差が小さくな
り、500nmを超えると繰り返し記録再生によるBE
R等の特性劣化が大きくなる。より好ましくは10〜4
00nmである。[0014] In addition, Ge a Sb b Te c ( a + b + c =
100 at%), 5 at (atomic)% ≦ a ≦ 7
0 at% is good, and when a <5 at%, the crystallization speed is low,
When 70 at% <a, the amorphous state becomes unstable. 0at
% ≦ b ≦ 50 at% is good, and if 50 at% <b, the amorphous state becomes unstable. 40 at% ≦ c ≦ 70 at% is good, and if c <40 at%, the crystallization temperature becomes too high, and
Even when 0 at% <c, the crystallization temperature is too high. The thickness of the recording layer 3 is preferably 5 to 500 nm, and if it is less than 5 nm, the difference in reflectance between the crystalline state and the amorphous state becomes small.
Deterioration of characteristics such as R increases. More preferably 10-4
00 nm.
【0015】上記第一,第二透明誘電体層2,4は、記
録層3の保護層として機能するものであり、その材質
は、ZnS−SiO2 ,SiN系材料,SiON系材
料,SiO2 ,SiO,TiO2 ,Al2 O3 ,Y2 O
3 ,TaN,AlN,ZnS,Sb2 S3 ,SnS
e2 ,Sb2 Se3 ,CeF3 ,アモルァスSi(以
下、a−Siと表記する),TiB2 ,B4 C,B,C
等が好ましい。The first and second transparent dielectric layers 2 and 4 function as protective layers for the recording layer 3 and are made of ZnS-SiO 2 , SiN-based material, SiON-based material, SiO 2 -based material. , SiO, TiO 2, Al 2 O 3, Y 2 O
3, TaN, AlN, ZnS, Sb 2 S 3, SnS
e 2 , Sb 2 Se 3 , CeF 3 , amorphous Si (hereinafter referred to as a-Si), TiB 2 , B 4 C, B, C
Are preferred.
【0016】特に、ZnS−SiO2 がよく、この材料
は高温での特性変化が少ない。(ZnS)x (Si
O2 )100-x とした場合、60モル%≦x≦95モル%
が好適であり、x<60モル%では耐熱性が悪く、x>
95モル%ではZnSの粒径が大きくなりジッターを劣
化させる。In particular, ZnS-SiO 2 is preferable, and this material has little change in characteristics at high temperatures. (ZnS) x (Si
O 2 ) When 100-x , 60 mol% ≦ x ≦ 95 mol%
When x <60 mol%, heat resistance is poor, and x>
At 95 mol%, the particle size of ZnS becomes large and jitter is deteriorated.
【0017】また、本発明の反射層5はAlを85.0
〜99.5at%、Coを0.5〜15.0at%含有
する。Alの組成比が99.5at%を超える場合、即
ちCoの組成比が0.5at%未満では、Alが酸化し
易くなり、その結果BERが劣化する。Alの組成比が
85.0at%未満の場合、即ちCoの組成比が15.
0at%を超えると、再生時のC/N比及びジッター特
性の低下、また繰り返し記録再生特性が劣化する。The reflection layer 5 of the present invention contains 85.0 Al.
9999.5 at%, and 0.5 to 15.0 at% of Co. When the composition ratio of Al exceeds 99.5 at%, that is, when the composition ratio of Co is less than 0.5 at%, Al is easily oxidized, and as a result, BER is deteriorated. When the composition ratio of Al is less than 85.0 at%, that is, the composition ratio of Co is 15.
If it exceeds 0 at%, the C / N ratio and the jitter characteristics at the time of reproduction deteriorate, and the repetitive recording / reproduction characteristics deteriorate.
【0018】更に、反射層5に他の添加成分として、C
r,Ti,Ta,Mo等を5at%以下程度含有させて
も良く、その場合本発明の上記効果が向上するか又は維
持される。5at%を超えると、反射層5の熱伝導率が
小さくなる。反射層5の厚さは、100Å〜2000Å
が好ましく、100Å未満では記録感度が高くなり過
ぎ、2000Åを超えると記録感度が低下し過ぎる。Further, as another additive component in the reflective layer 5, C
r, Ti, Ta, Mo and the like may be contained in an amount of about 5 at% or less, in which case the above-mentioned effects of the present invention are improved or maintained. If it exceeds 5 at%, the thermal conductivity of the reflective layer 5 will decrease. The thickness of the reflection layer 5 is 100 to 2000 mm.
If it is less than 100 °, the recording sensitivity becomes too high, and if it exceeds 2000 °, the recording sensitivity becomes too low.
【0019】また本発明において、記録層4と反射層5
との間に、熱伝導率の高いSi,Al,Ge,Ti,C
r等の元素を主成分として含有する中間層(冷却速度制
御層)を設けることで、放熱性を更に改善することがで
き、再生時のジッター特性を改善することができる。前
記中間層の厚さは10〜500Åが良く、10Å未満で
は均一な成膜が困難であり、500Åを超えるとジッタ
ー特性を改善させる効果がなくなる。In the present invention, the recording layer 4 and the reflection layer 5
Between Si, Al, Ge, Ti, and C having high thermal conductivity.
By providing an intermediate layer (cooling rate control layer) containing an element such as r as a main component, heat dissipation can be further improved, and jitter characteristics at the time of reproduction can be improved. The thickness of the intermediate layer is preferably from 10 to 500 °, and if it is less than 10 °, it is difficult to form a uniform film.
【0020】かくして、本発明の光記録媒体は、酸化防
止性等の化学的安定性と光反射特性及び熱特性とが共に
優れ、その結果再生時のC/N比、BER、ジッター特
性、繰り返し記録再生に対する耐久性等が大幅に向上す
る、という作用効果を有する。Thus, the optical recording medium of the present invention is excellent in both chemical stability such as antioxidant properties and the like, as well as light reflection characteristics and thermal characteristics. As a result, the C / N ratio during reproduction, BER, jitter characteristics, This has the effect of greatly improving the durability against recording and reproduction.
【0021】本発明において、上記各層を透明基板1の
両面に各々積層するか、片面に上記各層を積層した2枚
の透明基板1を貼り付けることにより、2倍の記録容量
としてもよい。また、本発明は、レーザビームをパルス
変調する光強度変調方式によるものに限らず、電子ビー
ム、電磁波等のエネルギー線による加熱方式も応用可能
である。本発明の媒体Mは相変化型の書き換え可能な光
ディスクであり、CD−RW(Compact Disc ReWritabl
e )、DVD−RW(Digital Versatile DiscReWritab
le )等の光ディスクに適用できる。In the present invention, the recording capacity may be doubled by laminating each of the above layers on both sides of the transparent substrate 1 or by adhering two transparent substrates 1 each having the above layers laminated on one side thereof. The present invention is not limited to the light intensity modulation method for pulse-modulating a laser beam, but may be applied to a heating method using energy beams such as an electron beam and an electromagnetic wave. The medium M of the present invention is a phase-change rewritable optical disk, and is a CD-RW (Compact Disc ReWritabl).
e), DVD-RW (Digital Versatile Disc ReWritab)
le)).
【0022】尚、本発明は上記の実施形態に限定される
ものではなく、本発明の要旨を逸脱しない範囲内で種々
の変更は何等差し支えない。It should be noted that the present invention is not limited to the above embodiment, and various changes may be made without departing from the scope of the present invention.
【0023】[0023]
【実施例】本発明の実施例を以下に説明する。Embodiments of the present invention will be described below.
【0024】(実施例1)図1の媒体M(光ディスク)
を以下のようにして構成した。ポリカーボネートから成
る3.5インチ径のディスク状の透明基板1の主面上
に、以下の各層をマグネトロンスパッタリング法により
順次成膜した。(Embodiment 1) Medium M (optical disk) shown in FIG.
Was constructed as follows. The following layers were sequentially formed on the main surface of a 3.5-inch diameter disk-shaped transparent substrate 1 made of polycarbonate by magnetron sputtering.
【0025】膜厚約1500Å,(ZnS)80(SiO
2 )20から成る第一透明誘電体層2、膜厚約200Å,
Ge2 Sb2 Te5 から成る記録層3、膜厚約200
Å,(ZnS)80(SiO2 )20から成る第二透明誘電
体層4、膜厚約1000Å、AlとCoを主成分とする
反射層5である。A film thickness of about 1500 °, (ZnS) 80 (SiO
2 ) The first transparent dielectric layer 2 composed of 20 ;
Recording layer 3 made of Ge 2 Sb 2 Te 5 , thickness about 200
{, A second transparent dielectric layer 4 made of (ZnS) 80 (SiO 2 ) 20 , a thickness of about 1000 °, and a reflective layer 5 mainly composed of Al and Co.
【0026】また、比較例として、AlにTi等のCo
以外の各種元素を添加した材料からなる反射層5を成膜
したものを作製した。As a comparative example, Al is made of Co such as Ti.
A reflective layer 5 made of a material to which various elements other than the above were added was formed.
【0027】そして、これらについて、光ディスクを再
生した場合のC/N比(dB)、BER、記録ビット端
部のジッター特性(%)、酸化防止性を測定した結果を
表1に示す。尚、C/N比、BER、ジッター特性の測
定は、光ディスクのトラックの線速度を6.18m/s
ecとし、光波長830nmで13mW(非晶質状態に
対応)と5mW(結晶質状態に対応)にパルス変調され
たレーザビームを照射し、4.91MHzで記録を行い
再生した際の再生信号を計測することで行った。また、
酸化防止性の測定は、85℃,95%RH(相対湿度)
の空気中の環境下で1000時間放置後、外観観察によ
り酸化のため変色、泡、剥離等が生じていないものを丸
印で示し、変色、泡、剥離等が生じたものを×印で示し
た。Table 1 shows the measurement results of the C / N ratio (dB), BER, jitter characteristics (%) at the end of the recording bit, and antioxidation property when the optical disk was reproduced. The C / N ratio, BER, and jitter characteristics were measured by setting the linear velocity of the track on the optical disk to 6.18 m / s.
ec is irradiated with a laser beam pulse-modulated to 13 mW (corresponding to an amorphous state) and 5 mW (corresponding to a crystalline state) at a light wavelength of 830 nm, and reproduced at the time of recording and reproducing at 4.91 MHz. It was done by measuring. Also,
Measurement of antioxidant properties: 85 ° C, 95% RH (relative humidity)
After leaving for 1000 hours in an environment in the air, the appearance is shown by circles where discoloration, bubbles and peeling etc. have not occurred due to oxidation, and those where discoloration, bubbles and peeling etc. have occurred are shown with x marks. Was.
【0028】[0028]
【表1】 [Table 1]
【0029】表1に示すように、本発明のNO.3〜1
1,13〜16では、C/N比が48.0dB以上、B
ERが4.5×10-4以下、ジッターが8.2%以下、
酸化防止性は良好と優れた特性を示した。As shown in Table 1, the NO. 3 to 1
In the case of 1, 13 to 16, the C / N ratio was 48.0 dB or more, and B
An ER of 4.5 × 10 −4 or less, a jitter of 8.2% or less,
The antioxidant properties showed good and excellent properties.
【0030】これに対し、Coが0.5at%未満のN
O.1,2では、BER及び酸化防止性が劣化した。C
oが15.0at%を超えるNO.12では、C/N比
が42.3dB、ジッターが25.3%と劣化した。ま
た、Tiを含有するNO.17,18ではBERとジッ
ターが劣化した。更に、Crを含有するNO.19,2
0、Taを含有するNO.21,22、及びMoを含有
するNO.23,24では、C/N比、BER、ジッタ
ー共本発明よりも劣化し、しかもNO.23,24は酸
化防止性も不良であった。On the other hand, when N is less than 0.5 at%,
O. In 1 and 2, the BER and the antioxidant property were deteriorated. C
NO in which o exceeds 15.0 at%. In No. 12, the C / N ratio deteriorated to 42.3 dB, and the jitter deteriorated to 25.3%. In addition, NO. 17 and 18, the BER and the jitter deteriorated. Furthermore, NO. 19, 2
NO. 0 and Ta. NO. 21, 22 and Mo containing NO. In Nos. 23 and 24, the C / N ratio, BER, and jitter were all worse than those of the present invention, and the NO. 23 and 24 also had poor antioxidant properties.
【0031】(実施例2)実施例1の上記第二透明誘電
体層4と反射層5(Al96O4 )との間に、下記表2の
各種中間層(厚さ200Å)を設けた以外は上記実施例
1と同様に構成し、それらのC/N比(dB)、BE
R、記録ビット端部のジッター特性(%)、酸化防止性
を測定した結果を表2に示す。(Embodiment 2) Between the second transparent dielectric layer 4 of Embodiment 1 and the reflection layer 5 (Al 96 O 4 ), various intermediate layers (thickness 200 mm) shown in Table 2 below were provided. Except for the above, the configuration was the same as that of the first embodiment, and their C / N ratio (dB), BE
Table 2 shows the measurement results of R, the jitter characteristic (%) at the end of the recording bit, and the antioxidant property.
【0032】[0032]
【表2】 [Table 2]
【0033】表2に示すように、いずれのものもC/N
比、BER、ジッター特性(%)、酸化防止性共良好な
特性であり、特にジッターが低減された。As shown in Table 2, each of them has C / N
The ratio, BER, jitter characteristics (%), and antioxidant properties were all good, and jitter was particularly reduced.
【0034】[0034]
【発明の効果】本発明は、非晶質又は結晶質に相変化す
る記録層と、Al及びCoを主成分としAlを85.0
〜99.5原子%、Coを0.5〜15.0原子%含有
する反射層とを有することにより、酸化防止性等の化学
的安定性と光反射特性及び熱特性とが共に優れ、その結
果再生時のC/N比、BER、ジッター特性、繰り返し
記録再生に対する耐久性等が大幅に向上するという作用
効果を有する。According to the present invention, a recording layer which changes into an amorphous or crystalline phase, and Al and Co as main components and 85.0% of Al are provided.
By having a reflective layer containing Co99.5 atomic% and 0.5 to 15.0 atomic% of Co, both chemical stability such as antioxidant properties, light reflection characteristics and thermal characteristics are excellent. This has the effect of greatly improving the C / N ratio, BER, jitter characteristics, durability against repeated recording / reproduction during reproduction, and the like.
【図1】本発明の光記録媒体Mの部分断面図である。FIG. 1 is a partial sectional view of an optical recording medium M of the present invention.
1:透明基板 2:第一透明誘電体層 3:記録層 4:第二透明誘電体層 5:反射層 1: transparent substrate 2: first transparent dielectric layer 3: recording layer 4: second transparent dielectric layer 5: reflective layer
Claims (1)
非晶質又は結晶質に相変化する記録層と、Al及びCo
を主成分としAlを85.0〜99.5原子%、Coを
0.5〜15.0原子%含有する反射層とを順次積層し
たことを特徴とする光記録媒体。1. A recording layer, on a transparent substrate, which changes into an amorphous or crystalline phase according to the output of irradiation light;
An optical recording medium comprising: a reflection layer containing, as a main component, 85.0 to 99.5 atom% of Al and 0.5 to 15.0 atom% of Co.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11152995A JP2000339764A (en) | 1999-05-31 | 1999-05-31 | Optical recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11152995A JP2000339764A (en) | 1999-05-31 | 1999-05-31 | Optical recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2000339764A true JP2000339764A (en) | 2000-12-08 |
Family
ID=15552662
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11152995A Pending JP2000339764A (en) | 1999-05-31 | 1999-05-31 | Optical recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2000339764A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002049025A1 (en) | 2000-12-15 | 2002-06-20 | Koninklijke Philips Electronics N.V. | Optical information medium and its use |
WO2002058061A1 (en) * | 2001-01-16 | 2002-07-25 | Dataplay, Inc. | Optical data storage media with enhanced contrast |
KR100399021B1 (en) * | 2001-01-31 | 2003-09-19 | 한국과학기술연구원 | High Density Optical Disk Having Reflecting Layer of Amorphous Materials |
US6908725B2 (en) | 2001-01-16 | 2005-06-21 | Dphi Acquisitions, Inc. | Double-sided hybrid optical disk with surface topology |
-
1999
- 1999-05-31 JP JP11152995A patent/JP2000339764A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002049025A1 (en) | 2000-12-15 | 2002-06-20 | Koninklijke Philips Electronics N.V. | Optical information medium and its use |
EA005347B1 (en) * | 2000-12-15 | 2005-02-24 | Конинклейке Филипс Электроникс Н.В. | Optical information medium and its use |
WO2002058061A1 (en) * | 2001-01-16 | 2002-07-25 | Dataplay, Inc. | Optical data storage media with enhanced contrast |
US6908725B2 (en) | 2001-01-16 | 2005-06-21 | Dphi Acquisitions, Inc. | Double-sided hybrid optical disk with surface topology |
US7368222B2 (en) | 2001-01-16 | 2008-05-06 | Dphi Acquisitions, Inc. | Optical data storage media with enhanced contrast |
KR100399021B1 (en) * | 2001-01-31 | 2003-09-19 | 한국과학기술연구원 | High Density Optical Disk Having Reflecting Layer of Amorphous Materials |
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