JP2001006213A - Optical recording medium - Google Patents

Optical recording medium

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Publication number
JP2001006213A
JP2001006213A JP11177198A JP17719899A JP2001006213A JP 2001006213 A JP2001006213 A JP 2001006213A JP 11177198 A JP11177198 A JP 11177198A JP 17719899 A JP17719899 A JP 17719899A JP 2001006213 A JP2001006213 A JP 2001006213A
Authority
JP
Japan
Prior art keywords
layer
dielectric layer
deformation
substrate
transparent dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11177198A
Other languages
Japanese (ja)
Inventor
Makoto Sugawara
信 菅原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP11177198A priority Critical patent/JP2001006213A/en
Publication of JP2001006213A publication Critical patent/JP2001006213A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To suppress deformation of a substrate and to prevent corrosion of a transparent dielectric layer and a recording layer, oxidation and deformation of the recording layer and deterioration of BER and the like. SOLUTION: The optical recording medium M2 has such layers mentioned below and successively film-formed by a magnetron sputtering method on the main surface of a transparent substrate which has a disk-like shape having a 3.5 inch diameter and consists of polycarbonate, that is, a deformation suppressing layer 12 having about 200 Åfilm-thickness and >=1.5×106 Kg/cm2 Young's modulus, a first transparent dielectric layer 13 having an about 1,000 Åfilm-thickness and containing >=70 mole % ZnS, a recording layer 14 having an about 200 Å film-thickness and made of Ge2, Sb2 and Te5, a second transparent dielectric layer 15 having an about 200 Å film-thickness and made of the same material as the first dielectric layer and a reflecting layer 16 having an about 1,000 Å film-thickness and made of an Al-Cr alloy.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、照射するレーザ光
等の光線の出力に応じて非晶質又は結晶質の2状態に相
変化する記録層を有し、前記2状態における記録ビット
の光の反射率差を利用してデジタル情報を記録再生する
ものであって、書き換え可能な光記録媒体に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a recording layer having a phase change between an amorphous state and a crystalline state according to the output of a light beam such as a laser beam to be irradiated. The present invention relates to a rewritable optical recording medium which records and reproduces digital information by utilizing the difference in reflectance of the optical recording medium.

【0002】[0002]

【従来の技術】従来の相転移を利用した書き換え可能な
光記録媒体M1(以下、媒体M1という)の部分断面図
を図3に示す。同図において、1はポリカーボネート等
の樹脂,ガラス等から成るディスク状の基板、2はZn
S−SiO2 等から成る第一透明誘電体層、3はGeT
e等から成り非晶質又は結晶質の2状態に相変化可能な
記録層、4はZnS−SiO2 等から成る第二透明誘電
体層、5はAl等の高反射率材料から成る反射層であ
る。
2. Description of the Related Art FIG. 3 is a partial sectional view of a conventional rewritable optical recording medium M1 utilizing a phase transition (hereinafter referred to as a medium M1). In FIG. 1, reference numeral 1 denotes a disk-shaped substrate made of a resin such as polycarbonate, glass, or the like;
First transparent dielectric layer made of S-SiO 2 or the like, 3 GeT
e, a recording layer capable of phase-change into two states of amorphous or crystalline, 4 a second transparent dielectric layer made of ZnS-SiO 2 or the like, 5 a reflective layer made of a high reflectivity material such as Al It is.

【0003】このような書き換え可能な媒体M1におい
て、記録層3は結晶質状態と非結晶質状態とで光の反射
率が異なっており、一般的に結晶質状態の方が反射率が
高いものが多い。そして、媒体M1の動作原理は以下の
ようなものである。まず、記録層3の全ての記録ビット
を結晶化しておく。即ち、反射率が高い状態とし初期化
しておく。情報の書込には、媒体M1を回転させながら
2種のレーザパワーにパルス変調されたレーザビームを
照射し、高出力(10数〜20mW程度)のレーザビー
ムが照射された記録ビットでは記録層3材料の融点より
も高温になり、溶融して急冷され非晶質化する。一方、
中出力(5〜10mW程度)のレーザビームが照射され
た記録ビットでは、前記融点以下の結晶化可能温度範囲
まで昇温された後、冷却され結晶質状態になる。
In such a rewritable medium M1, the recording layer 3 has a different light reflectance between a crystalline state and an amorphous state, and generally has a higher reflectance in the crystalline state. There are many. The operating principle of the medium M1 is as follows. First, all the recording bits of the recording layer 3 are crystallized. That is, initialization is performed in a state where the reflectance is high. For writing information, a laser beam pulse-modulated to two kinds of laser powers is irradiated while rotating the medium M1, and the recording layer is irradiated with a high-output (about 10 to 20 mW) laser beam. The material becomes higher than the melting points of the three materials, and is melted and rapidly cooled to become amorphous. on the other hand,
A recording bit irradiated with a laser beam of medium output (about 5 to 10 mW) is heated to a crystallization-possible temperature range equal to or lower than the melting point and then cooled to a crystalline state.

【0004】上記の書込動作は、古い情報が残留してい
る上から直接行うことができ、各記録ビットは新しい情
報に対応した状態に変化する。つまり、重ね書きによる
オーバーライト(Over Writeで、以下、OWと略す)が
可能である。再生は、読取用の低出力(1〜2mW程
度)のレーザビームを照射して、高反射率の結晶質相か
低反射率の非晶質相かを判読し、0,1のデジタル情報
として読み取る。
[0004] The above-mentioned writing operation can be performed directly after the old information remains, and each recording bit changes to a state corresponding to the new information. That is, overwriting by overwriting (Over Write, hereinafter abbreviated as OW) is possible. Reproduction is performed by irradiating a low-output (about 1 to 2 mW) laser beam for reading to determine whether the phase is a crystalline phase having a high reflectivity or an amorphous phase having a low reflectivity. read.

【0005】上記記録層3の材料としては、Te,S
e,Sのうちの1元素を含む材料のカルコゲン化物が適
しており、カルコゲン化物は非晶質になりやすいという
特徴がある。具体的には、GeTe系材料、GeSbT
e系材料、InSeTlCo系材料、InSbTe系材
料等がある。
The material of the recording layer 3 is Te, S
A chalcogenide of a material containing one element of e and S is suitable, and the chalcogenide has a feature that it easily becomes amorphous. Specifically, GeTe-based materials, GeSbT
e-based materials, InSeTlCo-based materials, InSbTe-based materials, and the like.

【0006】そして、従来このような相変化型の媒体M
1において、透明基板上に相変化型の光記録層を形成し
た光記録媒体であって、誘電体膜に発生するクラックの
方向が径方向に存在するものを誘電体類A、クラックの
発生する方向が周方向に存在するものを誘電体類Bとし
たとき、透明基板と光記録層の間に、窒化アルミニウ
ム,炭化シリコン等の誘電体類Aに属する誘電体膜と窒
化シリコン,硫化亜鉛等の誘電体類Bに属する誘電体膜
を少なくとも2層以上積層するか、誘電体類Aに属する
誘電体と誘電体類Bに属する誘電体とを少なくとも2成
分以上混合した複合誘電体膜を設けたことにより、長期
間C/N比,BER等が劣化せず、クラックの発生が防
止でき、長期信頼性が向上するものが提案されている
(従来例1:特開昭62−42350号公報参照)。
Conventionally, such a phase change type medium M
In 1, an optical recording medium in which a phase-change optical recording layer is formed on a transparent substrate, in which the direction of cracks generated in the dielectric film exists in the radial direction, is defined as dielectrics A, in which cracks are generated. When dielectrics B exist in the circumferential direction, a dielectric film belonging to dielectrics A such as aluminum nitride and silicon carbide and a silicon nitride, zinc sulfide, etc. are provided between the transparent substrate and the optical recording layer. Or a composite dielectric film in which at least two dielectric films belonging to dielectrics A are laminated or at least two components of dielectric materials belonging to dielectrics B are mixed. As a result, a C / N ratio, BER, and the like are not deteriorated for a long time, cracks can be prevented, and long-term reliability is improved (conventional example 1: Japanese Patent Application Laid-Open No. Sho 62-42350). reference).

【0007】また、従来例2として、基板上に、第1誘
電体層、相変化型の記録層、第2誘電体層、反射層を順
次形成した光記録媒体において、第1誘電体層が250
nm以上の膜厚を有し、Si,Ta、Alの酸化物,窒
化物,炭化物若しくは酸窒化物、ZnS,ZnSe、こ
れらの化合物の混合物、又はこれらの化合物の複化合物
を主成分とすることにより、多数回の記録の書換を繰り
返しても、樹脂基板にダメージが起こり難く、保護層の
欠陥の発生もほとんどないものが公知である(従来例
2:特開平6−20301号公報参照)。
As a second conventional example, in an optical recording medium in which a first dielectric layer, a phase-change recording layer, a second dielectric layer, and a reflective layer are sequentially formed on a substrate, the first dielectric layer is 250
It has a thickness of at least nm and is mainly composed of oxides, nitrides, carbides or oxynitrides of Si, Ta, and Al, ZnS, ZnSe, a mixture of these compounds, or a complex compound of these compounds. Thus, a resin substrate is known in which even if rewriting of recording is repeated many times, the resin substrate is hardly damaged and the protective layer is hardly defective (see Conventional Example 2: JP-A-6-20301).

【0008】[0008]

【発明が解決しようとする課題】しかしながら、上記従
来例1では、樹脂等から成る透明基板から誘電体膜への
水分の浸食を抑制し難く、また環境の温度及び湿度の変
化による透明基板の変形を防止する効果が不十分であっ
た。また、従来例2においては、第1誘電体層が250
nm(2500Å)以上と厚いために高コスト化すると
いう問題があった。
However, in the above prior art example 1, it is difficult to suppress the erosion of moisture from the transparent substrate made of resin or the like to the dielectric film, and the deformation of the transparent substrate due to a change in environmental temperature and humidity. Effect was insufficient. In Conventional Example 2, the first dielectric layer is 250
Since the thickness is as thick as nm (2500 °) or more, there is a problem that the cost is increased.

【0009】従って、本発明は上記事情に鑑みて完成さ
れたものであり、その目的は、環境の温度及び湿度の変
化により生じる基板の変形を抑制し、また基板からの水
分の浸食等を防ぐことにより記録層の酸化及び変形、反
射層の剥離を防止し、更に変形抑制層を厚膜化せずとも
良いため低コストに作製可能なものとすることにある。
Accordingly, the present invention has been completed in view of the above circumstances, and an object of the present invention is to suppress deformation of a substrate caused by changes in the temperature and humidity of the environment and to prevent erosion of moisture from the substrate. Accordingly, it is possible to prevent the recording layer from being oxidized and deformed, and to prevent the reflection layer from being peeled off. Further, it is not necessary to increase the thickness of the deformation suppressing layer, so that it can be manufactured at low cost.

【0010】[0010]

【課題を解決するための手段】本発明の光記録媒体は、
基板上にヤング率が1.5×106 kg/cm2 以上の
変形抑制層を形成し、該変形抑制層上に、照射する光の
出力に応じて非晶質又は結晶質に相変化する記録層、記
録層の少なくとも一方の界面に形成されかつ硫化亜鉛を
70モル%以上含有する透明誘電体層、及び反射層を設
けたことを特徴とする。
The optical recording medium of the present invention comprises:
A deformation suppressing layer having a Young's modulus of 1.5 × 10 6 kg / cm 2 or more is formed on the substrate, and the phase of the deformation suppressing layer changes to amorphous or crystalline according to the output of irradiation light. A recording layer, a transparent dielectric layer formed on at least one interface of the recording layer and containing at least 70 mol% of zinc sulfide, and a reflective layer are provided.

【0011】本発明は、上記構成により、所定値以上の
ヤング率を有する変形抑制層を基板の主面に接して形成
することで、環境の温度及び湿度の変化により生じる基
板の変形を抑制し、また基板からの水分の浸食等を防ぐ
ことにより記録層の酸化及び変形、反射層の剥離等を防
止するという作用効果を有する。
According to the present invention, a deformation suppressing layer having a Young's modulus equal to or higher than a predetermined value is formed in contact with the main surface of the substrate to suppress the deformation of the substrate caused by changes in environmental temperature and humidity. In addition, it has the effect of preventing oxidation and deformation of the recording layer, peeling of the reflection layer, and the like by preventing erosion of moisture from the substrate.

【0012】また本発明において、好ましくは、前記変
形抑制層は、酸化アルミニウム,酸化ジルコニウムのう
ちの一種以上から成る変形抑制成分と、窒化シリコン,
酸化マグネシウム,酸化イットリウム,窒化ゲルマニウ
ムのうちの一種以上から成る高密着化成分とを主成分と
することを特徴とする。
In the present invention, preferably, the deformation suppressing layer comprises a deformation suppressing component comprising at least one of aluminum oxide and zirconium oxide;
A high-adhesion component composed of at least one of magnesium oxide, yttrium oxide, and germanium nitride is a main component.

【0013】このような構成により、基板の変形及び水
分の浸食も抑制可能な上、基板及び透明誘電体層との密
着性も向上する。即ち、前記高密着化成分は靱性を有
し、有機物との結合力が大きいという特性により、基板
及び透明誘電体層との密着性が高まる。
According to such a configuration, the deformation of the substrate and the erosion of moisture can be suppressed, and the adhesion between the substrate and the transparent dielectric layer is also improved. That is, the high adhesion component has toughness and a large bonding force with an organic substance, so that the adhesion between the substrate and the transparent dielectric layer is enhanced.

【0014】[0014]

【発明の実施の形態】本発明の媒体について以下に説明
する。本発明の媒体の基本的な層構成を図1,図2に示
す。同図において、11はポリカーボネート,ポリオレ
フィン,エポキシ樹脂,アクリル樹脂,ガラス,樹脂層
を表面に形成した強化ガラス、透光性セラミックス、又
はAl2 3 等の不透明材料から成るディスク状の透明
基板、12はヤング率が1.5×106 kg/cm2
上の変形抑制層、13は硫化亜鉛(ZnS)を70モル
%以上含有しZnS−SiO2 等から成る第一透明誘電
体層、14は相変化型の記録層、15は第一透明誘電体
層13と同じ材質の第二透明誘電体層、16は反射率の
高いAl,AlTi合金,AlCr合金,AlCu合
金,Au,Ag,AuCu合金,Pt,AuPt合金等
から成る反射層である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The medium of the present invention will be described below. The basic layer structure of the medium of the present invention is shown in FIGS. In the figure, reference numeral 11 denotes a disc-shaped transparent substrate made of polycarbonate, polyolefin, epoxy resin, acrylic resin, glass, tempered glass having a resin layer formed on the surface, translucent ceramics, or an opaque material such as Al 2 O 3 ; 12 is a deformation suppressing layer having a Young's modulus of 1.5 × 10 6 kg / cm 2 or more; 13 is a first transparent dielectric layer containing ZnS—SnO 2 containing 70 mol% or more of ZnS—SiO 2 ; Is a phase change type recording layer, 15 is a second transparent dielectric layer of the same material as the first transparent dielectric layer 13, 16 is Al, AlTi alloy, AlCr alloy, AlCu alloy, Au, Ag, AuCu having high reflectivity. The reflection layer is made of an alloy, Pt, AuPt alloy, or the like.

【0015】本発明において、記録層14はGeTe,
GeSbTe,InSeTlCo,InSbTe等のカ
ルコゲン化物から成る材料がよく、なかでもGeTe,
GeSbTeが書き換え可能回数が大きく、結晶化する
際に短時間で結晶化が可能であり、非晶質状態の安定性
も高いという点で好ましい。
In the present invention, the recording layer 14 is made of GeTe,
Materials made of chalcogenides, such as GeSbTe, InSeTlCo, and InSbTe, are preferred.
GeSbTe is preferable because it can be rewritten a large number of times, can be crystallized in a short time when crystallized, and has high stability in an amorphous state.

【0016】また、Gea Sbb Tec (a+b+c=
100原子%)とした場合、5at(原子)%≦a≦7
0at%がよく、a<5at%では結晶化速度が遅く、
70at%<aでは非晶質状態が不安定になる。0at
%≦b≦50at%がよく、50at%<bでは非晶質
状態が不安定になる。40at%≦c≦70at%がよ
く、c<40at%では結晶化温度が高くなりすぎ、7
0at%<cのときも結晶化温度が高くなりすぎる。特
に、Ge2 Sb2 Te5 又はGeSb2 Te4が好まし
く、この場合結晶化速度が速く高線速度での消去特性が
良好である。
[0016] In addition, Ge a Sb b Te c ( a + b + c =
100 at%), 5 at (atomic)% ≦ a ≦ 7
0 at% is good, and when a <5 at%, the crystallization speed is low,
When 70 at% <a, the amorphous state becomes unstable. 0at
% ≦ b ≦ 50 at% is good, and if 50 at% <b, the amorphous state becomes unstable. 40 at% ≦ c ≦ 70 at% is good, and if c <40 at%, the crystallization temperature becomes too high, and
Even when 0 at% <c, the crystallization temperature is too high. In particular, Ge 2 Sb 2 Te 5 or GeSb 2 Te 4 is preferable. In this case, the crystallization speed is high and the erasing characteristics at a high linear velocity are good.

【0017】また、記録層14の厚さは5〜30nmが
よく、5nm未満では結晶質状態と非晶質状態間の反射
率差が小さくなり、30nmを超えると繰り返し記録再
生によるBER(Bit Error Rate)等の特性劣化が大き
くなる。より好ましくは10〜20nmである。
The thickness of the recording layer 14 is preferably 5 to 30 nm, and if it is less than 5 nm, the reflectance difference between the crystalline state and the amorphous state becomes small. Rate) and the like. More preferably, it is 10 to 20 nm.

【0018】本発明の変形抑制層12はヤング率が1.
5×106 kg/cm2 以上であり、1.5×106
g/cm2 未満では基板11の局所的な変形を抑制する
効果が小さくなり、記録層14の変形、反射層16の剥
離等が発生し易くなる。ヤング率の測定は、変形抑制層
12に所定の圧痕を付けるのに必要な外力を硬度計によ
り測定するといった方法で行うことができる。
The deformation suppressing layer 12 of the present invention has a Young's modulus of 1.0.
5 × 10 6 kg / cm 2 or more and 1.5 × 10 6 k
If it is less than g / cm 2 , the effect of suppressing local deformation of the substrate 11 will be small, and deformation of the recording layer 14 and peeling of the reflective layer 16 will easily occur. The measurement of the Young's modulus can be performed by a method of measuring an external force required for making a predetermined indentation on the deformation suppressing layer 12 by using a hardness meter.

【0019】また変形抑制層12は、酸化アルミニウム
(Al2 3 ),酸化ジルコニウム(ZrO2 )のうち
の一種以上から成る変形抑制成分と、窒化シリコン(S
34 ),酸化マグネシウム(MgO),酸化イット
リウム(Y2 3 ),窒化ゲルマニウム(GeN)のう
ちの一種以上から成る高密着化成分とを主成分とするこ
とが好ましく、基板11の変形及び基板11から水分に
よる第一透明誘電体層13及び記録層14の浸食も抑制
可能な上、基板11及び第一透明誘電体層13との密着
性も向上する。前記変形抑制成分は40〜90モル%含
有されるのが良く、40モル%未満では変形抑制効果が
小さくなり、90モル%を超えると密着力が低下し、変
形抑制層12の剥離、割れ等を生じる。
The deformation suppressing layer 12 includes a deformation suppressing component composed of at least one of aluminum oxide (Al 2 O 3 ) and zirconium oxide (ZrO 2 ) and silicon nitride (S).
i 3 N 4), magnesium oxide (MgO), yttrium oxide (Y 2 O 3), it is preferable that a main component and the high adhesion of components consisting of one or more of germanium nitride (GeN), the substrate 11 The deformation and erosion of the first transparent dielectric layer 13 and the recording layer 14 due to moisture from the substrate 11 can be suppressed, and the adhesion between the substrate 11 and the first transparent dielectric layer 13 is also improved. The deformation-suppressing component is preferably contained in an amount of 40 to 90 mol%. If the amount is less than 40 mol%, the deformation-suppressing effect is reduced. Is generated.

【0020】更に、変形抑制層12の厚さは50〜50
0Åが良く、50Å未満では変形抑制効果が小さくなり
過ぎ、500Åを超えると媒体全体に蓄熱され易くな
り、放熱性が劣化する。
Further, the thickness of the deformation suppressing layer 12 is 50 to 50.
0 ° is good, and if it is less than 50 °, the deformation suppressing effect becomes too small, and if it exceeds 500 °, heat is easily stored in the entire medium, and heat radiation deteriorates.

【0021】上記第一透明誘電体層13及び第二透明誘
電体層15は、記録層14の保護層及び中間層として機
能するものであり、その材質は硫化亜鉛(ZnS)を7
0モル%以上含有するものである。70モル%未満では
屈折率が小さくなり、光の干渉効果により記録層14か
らの反射光をエンハンスする効果が小さくなり、C/N
比等が劣化する。そして、硫化亜鉛の含有率はX線光電
子分光分析法(通称ESCA)、オージェ電子分光分析
法等により分析可能である。
The first transparent dielectric layer 13 and the second transparent dielectric layer 15 function as a protective layer and an intermediate layer of the recording layer 14, and are made of zinc sulfide (ZnS).
It contains 0 mol% or more. If it is less than 70 mol%, the refractive index becomes small, the effect of enhancing the reflected light from the recording layer 14 due to the light interference effect becomes small, and C / N
The ratio etc. deteriorates. The content of zinc sulfide can be analyzed by X-ray photoelectron spectroscopy (so-called ESCA), Auger electron spectroscopy, or the like.

【0022】また、硫化亜鉛に添加し得る成分として
は、酸化ジルコニウム(ZrO2 ),酸化アルミニウム
(Al2 3 ),酸化シリコン(SiO2 ,SiO),
酸化チタン(TiO2 ),窒化珪素(Si3 4 ),炭
化珪素(SiC),窒化チタン(TiN),炭化チタン
(TiC),窒化アルミニウム(AlN),窒化タンタ
ル(TaN),炭化ジルコニウム(ZrC),酸化イッ
トリウム(Y2 3 ),酸化マグネシウム(MgO),
酸化ニッケル(NiO),酸化ホウ素(B2 3),酸
化クロム(Cr2 3 ),酸化カルシウム(CaO),
硫化アンチモン(Sb2 3 ),セレン化錫(SnSe
2 ),セレン化アンチモン(Sb2 Se3),フッ化セ
シウム(CeF3 ),ホウ化チタン(TiB2 ),炭化
ホウ素(B4 C),B等のうちの少なくとも1種が好ま
しく、これらの物質を添加すると繰り返し記録再生に対
する耐久性が向上する。
The components that can be added to zinc sulfide include zirconium oxide (ZrO 2 ), aluminum oxide (Al 2 O 3 ), silicon oxide (SiO 2 , SiO),
Titanium oxide (TiO 2 ), silicon nitride (Si 3 N 4 ), silicon carbide (SiC), titanium nitride (TiN), titanium carbide (TiC), aluminum nitride (AlN), tantalum nitride (TaN), zirconium carbide (ZrC) ), Yttrium oxide (Y 2 O 3 ), magnesium oxide (MgO),
Nickel oxide (NiO), boron oxide (B 2 O 3 ), chromium oxide (Cr 2 O 3 ), calcium oxide (CaO),
Antimony sulfide (Sb 2 S 3 ), tin selenide (SnSe)
2 ), antimony selenide (Sb 2 Se 3 ), cesium fluoride (CeF 3 ), titanium boride (TiB 2 ), boron carbide (B 4 C), B and the like are preferable. The addition of the substance improves the durability against repeated recording and reproduction.

【0023】これら第一透明誘電体層13、第二透明誘
電体層15の厚さは1〜200nmが良く、1nm未満
では保護層としての機能がなくなると共に均一に成膜す
ることが困難である。200nmを超えると、熱膨張に
よる記録層14の体積変化への追従性が劣化し、その結
果繰り返し記録再生に対するBER等の特性劣化が大き
くなる。
The thickness of the first transparent dielectric layer 13 and the second transparent dielectric layer 15 is preferably 1 to 200 nm. If the thickness is less than 1 nm, the function as a protective layer is lost and it is difficult to form a uniform film. . If it exceeds 200 nm, the ability to follow the volume change of the recording layer 14 due to thermal expansion is deteriorated, and as a result, the characteristic deterioration such as BER for repeated recording / reproduction becomes large.

【0024】上記実施形態においては、光を基板11側
から入射する場合の構成について説明したが、図2に示
すように光を記録層25側から入射する媒体M3にも本
発明は適用できる。同図において、21は基板、22は
変形抑制層、23は反射層、24は第二透明誘電体層、
25は相変化型の記録層、26は第一透明誘電体層であ
り、成膜順が図1の場合と異なるが、これらの材質及び
厚さ等については図1の場合と同様である。
In the above embodiment, the configuration in the case where light is incident from the substrate 11 side has been described. However, as shown in FIG. 2, the present invention can be applied to a medium M3 in which light is incident from the recording layer 25 side. In the figure, 21 is a substrate, 22 is a deformation suppressing layer, 23 is a reflective layer, 24 is a second transparent dielectric layer,
Reference numeral 25 denotes a phase-change type recording layer, and reference numeral 26 denotes a first transparent dielectric layer. The order of film formation is different from that in FIG. 1, but the materials and thicknesses thereof are the same as those in FIG.

【0025】かくして、本発明の光記録媒体は、環境の
温度及び湿度の変化により生じる基板の変形を抑制し、
また基板からの水分により透明誘電体層及び記録層が浸
食されるのを防ぐことにより記録層の酸化及び変形、反
射層の剥離等を防止し、更には基板との密着性が高まる
という作用効果を有する。
Thus, the optical recording medium of the present invention suppresses the deformation of the substrate caused by changes in the temperature and humidity of the environment,
In addition, the transparent dielectric layer and the recording layer are prevented from being eroded by moisture from the substrate, thereby preventing the recording layer from being oxidized and deformed, the reflection layer from being peeled off, and the adhesion to the substrate is further enhanced. Having.

【0026】本発明において、上記各層を基板11の両
面に各々積層するか、基板11の片面に上記各層を積層
した2枚の基板11を貼り合わせることにより、2倍の
記録容量としてもよい。また、本発明は、レーザビーム
をパルス変調する光強度変調方式によるものに限らず、
電子ビーム、電磁波等のエネルギー線による加熱方式も
応用可能である。本発明の媒体M2,M3は相変化型の
書き換え可能な光ディスクであり、CD−RW(Compac
t Disc ReWritable )、DVD−RW(Digital Versat
ile Disc ReWritable )等の光ディスクに適用できる。
更に、本発明の媒体M2,M3はディスク状のものに限
らず、カード状の光記録媒体にも適用でき、また基板1
1は媒体M3のような構成であれば必ずしも透明である
必要はない。
In the present invention, the recording capacity may be doubled by laminating each of the above layers on both sides of the substrate 11 or by bonding two substrates 11 each having the above layers on one side of the substrate 11. Further, the present invention is not limited to the light intensity modulation method of pulse-modulating a laser beam,
A heating method using an energy beam such as an electron beam or an electromagnetic wave is also applicable. The media M2 and M3 of the present invention are phase-change rewritable optical disks, and are CD-RW (Compac
t Disc ReWritable), DVD-RW (Digital Versat)
ile Disc ReWritable).
Further, the media M2 and M3 of the present invention can be applied not only to disk-shaped media but also to card-shaped optical recording media.
1 is not necessarily required to be transparent as long as it has a structure like the medium M3.

【0027】尚、本発明は上記の実施形態に限定される
ものではなく、本発明の要旨を逸脱しない範囲内で種々
の変更は何等差し支えない。
It should be noted that the present invention is not limited to the above embodiment, and various changes may be made without departing from the scope of the present invention.

【0028】[0028]

【実施例】本発明の実施例を以下に説明する。Embodiments of the present invention will be described below.

【0029】(実施例)図1の媒体M2(光ディスク)
を以下のようにして構成した。ポリカーボネートから成
る3.5インチ径のディスク状の透明な基板11の主面
上に、以下の各層をマグネトロンスパッタリング法によ
り順次成膜した。
(Embodiment) Medium M2 (optical disk) in FIG.
Was constructed as follows. The following layers were sequentially formed on the main surface of a 3.5-inch diameter disk-shaped transparent substrate 11 made of polycarbonate by magnetron sputtering.

【0030】膜厚約200Å,各種材料(表1)から成
る変形抑制層12、膜厚約1000Å,(ZnS)
80(SiO2 20から成る第一透明誘電体層13、膜厚
約200Å,Ge2 Sb2 Te5 から成る記録層14、
膜厚約200Å,第一透明誘電体層13と同じ材料から
成る第二透明誘電体層15、膜厚約1000Å,AlC
r合金から成る反射層16である。
Deformation suppressing layer 12 made of various materials (Table 1) having a thickness of about 200 Å, about 1000 膜厚 (ZnS)
A first transparent dielectric layer 13 made of 80 (SiO 2 ) 20 , a recording layer 14 made of Ge 2 Sb 2 Te 5 ,
A second transparent dielectric layer 15 made of the same material as the first transparent dielectric layer 13;
The reflection layer 16 is made of an r alloy.

【0031】そして、表1の如く変形抑制層12の材料
を変化させた場合に、変形抑制層12のヤング率(kg
/cm2 )、記録を1回行ったときのBER、85℃,
95%RH(相対湿度)の雰囲気の環境下に2000時
間放置した後のBERについて測定した結果を表1に示
す。尚、BERの測定は以下のようにして行った。光デ
ィスクのトラックの線速度を6.18m/sとし、光波
長830nmで13mW(非晶質に対応)と5mW(結
晶質に対応)にパルス変調されたレーザビームを照射
し、4.91MHzで記録し1mWのレーザビームで再
生した場合の再生信号強度から得たものである。
When the material of the deformation suppressing layer 12 is changed as shown in Table 1, the Young's modulus (kg
/ Cm 2 ), BER when recording was performed once, 85 ° C.,
Table 1 shows the measurement results of the BER after leaving for 2000 hours in an environment of 95% RH (relative humidity). In addition, the measurement of BER was performed as follows. The linear velocity of the track of the optical disk is set to 6.18 m / s, and a laser beam pulse-modulated to 13 mW (corresponding to amorphous) and 5 mW (corresponding to crystalline) at an optical wavelength of 830 nm is recorded at 4.91 MHz. It is obtained from the reproduced signal intensity when reproducing with a 1 mW laser beam.

【0032】[0032]

【表1】 [Table 1]

【0033】表1に示すように、ヤング率が1.5×1
6 kg/cm2 以上のNO.1〜5と1.5×106
kg/cm2 未満のNO.6,7とを比較すると、N
O.1〜5ではBERの劣化幅が24.9×106 以下
と小さかったのに対し、NO.6,7ではBERの劣化
幅が388.3×106 以上と非常に大きかった。
As shown in Table 1, the Young's modulus was 1.5 × 1
NO. 6 kg / cm 2 or more. 1-5 and 1.5 × 10 6
kg / cm 2 less than the NO. Comparing with 6,7, N
O. In Nos. 1 to 5, the deterioration width of the BER was as small as 24.9 × 10 6 or less. In Examples 6 and 7, the BER degradation range was very large, 388.3 × 10 6 or more.

【0034】また、変形抑制成分が40〜90モル%含
有されたNO.8〜19と、前記範囲から外れているN
O.20〜23とを比較すると、NO.8〜19ではB
ERの劣化幅が8.2×106 以下であったのに対し、
NO.20〜23では11.6×106 以上と大きくな
った。
The NO. 1 containing 40 to 90 mol% of the deformation suppressing component was used. 8 to 19, and N outside the above range
O. 20 to 23, NO. In 8-19, B
While the deterioration width of ER was 8.2 × 10 6 or less,
NO. In 20 to 23, it was as large as 11.6 × 10 6 or more.

【0035】このように、本発明は変形抑制力、密着
力、耐候性に優れるため長寿命なものとなり、その結果
BERの劣化が小さくなった。
As described above, the present invention has a long life due to its excellent deformation suppressing power, adhesive strength and weather resistance, and as a result, deterioration of BER is reduced.

【0036】[0036]

【発明の効果】本発明は、基板上にヤング率が1.5×
106 kg/cm2 以上の変形抑制層を形成し、変形抑
制層上に、照射する光の出力に応じて非晶質又は結晶質
に相変化する記録層、記録層の少なくとも一方の界面に
形成され硫化亜鉛を70モル%以上含有する透明誘電体
層、及び反射層を設けたことにより、環境の温度及び湿
度の変化により生じる基板の変形を抑制し、また基板か
らの水分により透明誘電体層及び記録層が浸食されるの
を防ぐことにより記録層の酸化及び変形、反射層の剥離
等を防止し、更には基板と透明誘電体層との密着性が高
まるという作用効果を有する。
According to the present invention, the Young's modulus is 1.5 × on the substrate.
A deformation suppressing layer of 10 6 kg / cm 2 or more is formed, and on the deformation suppressing layer, at least one interface between the recording layer and the recording layer that changes into an amorphous or crystalline phase according to the output of irradiation light. By providing the formed transparent dielectric layer containing at least 70 mol% of zinc sulfide and the reflective layer, deformation of the substrate caused by changes in the temperature and humidity of the environment is suppressed, and the transparent dielectric layer is formed by moisture from the substrate. By preventing erosion of the recording layer and the recording layer, oxidation and deformation of the recording layer, separation of the reflection layer, and the like are prevented, and furthermore, there is an effect that the adhesion between the substrate and the transparent dielectric layer is enhanced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の光記録媒体M2の部分断面図である。FIG. 1 is a partial sectional view of an optical recording medium M2 of the present invention.

【図2】本発明の光記録媒体M3の部分断面図である。FIG. 2 is a partial sectional view of an optical recording medium M3 of the present invention.

【図3】従来の光記録媒体M1の部分断面図である。FIG. 3 is a partial cross-sectional view of a conventional optical recording medium M1.

【符号の説明】[Explanation of symbols]

1:基板 2:第一透明誘電体層 3:記録層 4:第二透明誘電体層 5:反射層 11:基板 12:変形抑制層 13:第一透明誘電体層 14:記録層 15:第二透明誘電体層 16:反射層 1: substrate 2: first transparent dielectric layer 3: recording layer 4: second transparent dielectric layer 5: reflective layer 11: substrate 12: deformation suppressing layer 13: first transparent dielectric layer 14: recording layer 15: first Double transparent dielectric layer 16: Reflective layer

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】基板上にヤング率が1.5×106 kg/
cm2 以上の変形抑制層を形成し、該変形抑制層上に、
照射する光の出力に応じて非晶質又は結晶質に相変化す
る記録層、記録層の少なくとも一方の界面に形成されか
つ硫化亜鉛を70モル%以上含有する透明誘電体層、及
び反射層を設けたことを特徴とする光記録媒体。
1. The method according to claim 1, wherein the Young's modulus is 1.5 × 10 6 kg /
forming a deformation suppression layer of at least 2 cm2, and on the deformation suppression layer,
A recording layer that changes into an amorphous or crystalline phase in accordance with the output of the irradiation light, a transparent dielectric layer formed on at least one interface of the recording layer and containing at least 70 mol% of zinc sulfide, and a reflective layer. An optical recording medium characterized by being provided.
【請求項2】前記変形抑制層は、酸化アルミニウム,酸
化ジルコニウムのうちの一種以上から成る変形抑制成分
と、窒化シリコン,酸化マグネシウム,酸化イットリウ
ム,窒化ゲルマニウムのうちの一種以上から成る高密着
化成分とを主成分とすることを特徴とする請求項1記載
の光記録媒体。
2. The deformation suppressing layer comprises a deformation suppressing component comprising at least one of aluminum oxide and zirconium oxide and a high adhesion component comprising at least one of silicon nitride, magnesium oxide, yttrium oxide and germanium nitride. 2. The optical recording medium according to claim 1, wherein
JP11177198A 1999-06-23 1999-06-23 Optical recording medium Pending JP2001006213A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11177198A JP2001006213A (en) 1999-06-23 1999-06-23 Optical recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11177198A JP2001006213A (en) 1999-06-23 1999-06-23 Optical recording medium

Publications (1)

Publication Number Publication Date
JP2001006213A true JP2001006213A (en) 2001-01-12

Family

ID=16026904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11177198A Pending JP2001006213A (en) 1999-06-23 1999-06-23 Optical recording medium

Country Status (1)

Country Link
JP (1) JP2001006213A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1293552C (en) * 2001-12-03 2007-01-03 皇家飞利浦电子股份有限公司 Optical storage system, optical storage medium and use of such a medium

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1293552C (en) * 2001-12-03 2007-01-03 皇家飞利浦电子股份有限公司 Optical storage system, optical storage medium and use of such a medium

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