JP2000332293A5 - - Google Patents

Download PDF

Info

Publication number
JP2000332293A5
JP2000332293A5 JP1999140945A JP14094599A JP2000332293A5 JP 2000332293 A5 JP2000332293 A5 JP 2000332293A5 JP 1999140945 A JP1999140945 A JP 1999140945A JP 14094599 A JP14094599 A JP 14094599A JP 2000332293 A5 JP2000332293 A5 JP 2000332293A5
Authority
JP
Japan
Prior art keywords
iii
light emitting
emitting device
nitride layer
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999140945A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000332293A (ja
JP4583523B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP14094599A priority Critical patent/JP4583523B2/ja
Priority claimed from JP14094599A external-priority patent/JP4583523B2/ja
Publication of JP2000332293A publication Critical patent/JP2000332293A/ja
Publication of JP2000332293A5 publication Critical patent/JP2000332293A5/ja
Application granted granted Critical
Publication of JP4583523B2 publication Critical patent/JP4583523B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP14094599A 1999-05-21 1999-05-21 Ｉｉｉ−ｖ族窒化物半導体発光素子及びその製造方法 Expired - Lifetime JP4583523B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14094599A JP4583523B2 (ja) 1999-05-21 1999-05-21 Ｉｉｉ−ｖ族窒化物半導体発光素子及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14094599A JP4583523B2 (ja) 1999-05-21 1999-05-21 Ｉｉｉ−ｖ族窒化物半導体発光素子及びその製造方法

Publications (3)

Publication Number Publication Date
JP2000332293A JP2000332293A (ja) 2000-11-30
JP2000332293A5 true JP2000332293A5 (online.php) 2006-03-23
JP4583523B2 JP4583523B2 (ja) 2010-11-17

Family

ID=15280477

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14094599A Expired - Lifetime JP4583523B2 (ja) 1999-05-21 1999-05-21 Ｉｉｉ−ｖ族窒化物半導体発光素子及びその製造方法

Country Status (1)

Country Link
JP (1) JP4583523B2 (online.php)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4948720B2 (ja) * 2001-08-29 2012-06-06 シャープ株式会社 窒素化合物半導体積層物、発光素子、光ピックアップシステム、および窒素化合物半導体積層物の製造方法。
JP5442229B2 (ja) * 2008-09-04 2014-03-12 ローム株式会社 窒化物半導体素子の製造方法
TWI513044B (zh) * 2010-03-01 2015-12-11 同和電子科技股份有限公司 Semiconductor element and manufacturing method thereof
US9406836B2 (en) * 2012-07-11 2016-08-02 Koninklijke Philips N.V. Reducing or eliminating nanopipe defects in III-nitride structures
CN110350056B (zh) * 2019-07-25 2022-04-22 湘能华磊光电股份有限公司 一种led外延层生长方法
CN112670378A (zh) * 2020-12-31 2021-04-16 深圳第三代半导体研究院 一种发光二极管及其制造方法

Similar Documents

Publication Publication Date Title
US6110277A (en) Process for the fabrication of epitaxial layers of a compound semiconductor on monocrystal silicon and light-emitting diode fabricated therefrom
JP4177097B2 (ja) Ｉｉｉ−ｖ窒化物半導体ベースの放射線を発する半導体チップを製造する方法および放射線を発する半導体チップ
EP0898345A3 (en) Compound semiconductor light emitting device and method of fabricating the same
MY137396A (en) Group iii nitride based light emitting diode structures with a quantum well and superlattice, group iii nitride based quantum well structures and group iii nitride based superlattice structures
KR970026601A (ko) 질화물 반도체 장치
EP1065734A3 (en) Bonding type semiconductor substrate, semiconductor light emitting element, and preparation process thereof.
EP2045889A3 (en) Nitride semiconductor light-emitting device
WO2002031890A3 (en) OPTOELECTRONIC AND MICROELECTRONIC DEVICES INCLUDING CUBIC ZnMgO AND/OR CdMgO ALLOYS AND METHODS OF FABRICATING SAME
TW429660B (en) Growth method of a nitride III-V compound semiconductor, manufacturing method of a semiconductor device, and semiconductor device
TW201103164A (en) Semiconductor optoelectronic structure of increased light extraction efficiency and fabricated thereof
ES2367354T3 (es) Tampón mejorado para el crecimiento de gan sobre zafiro.
TW200414573A (en) Light emitting device with enhanced optical scattering
WO2003034560A1 (fr) Procede pour produire un element electroluminescent semi-conducteur, element electroluminescent semi-conducteur, procede pour produire un element semi-conducteur, element semi-conducteur, procede pour produire un element et element
TW201009896A (en) Method of forming a circuit structure
EP1526583A3 (en) Photonic crystal light emitting device
JP2008211228A5 (online.php)
EP1326290A3 (en) Method of fabricating semiconductor structures
EP1065705A3 (en) Group III nitride compound semiconductor device and producing method therefore
TW200629606A (en) III-V group compound semiconductor light emitting device and manufacturing method thereof
TW200417055A (en) Semiconductor light emitting device and its manufacturing method, integrated semiconductor light emitting device and manufacturing method thereof, image display device and its manufacturing method, illumination device and manufacturing method thereof
EP0877455A3 (en) Semiconductor light emitting device and method for producing the same
EP0735598A3 (en) Compound semiconductor light emitting device and method of preparing the same
JPH11340506A (ja) 半導体発光素子およびその製法
TWI248217B (en) Manufacture of a semiconductor device
JP2003124573A5 (online.php)