JP2000330104A - Reflective liquid crystal display device and its manufacture - Google Patents
Reflective liquid crystal display device and its manufactureInfo
- Publication number
- JP2000330104A JP2000330104A JP11138723A JP13872399A JP2000330104A JP 2000330104 A JP2000330104 A JP 2000330104A JP 11138723 A JP11138723 A JP 11138723A JP 13872399 A JP13872399 A JP 13872399A JP 2000330104 A JP2000330104 A JP 2000330104A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- interlayer insulating
- insulating film
- concave structure
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、表示装置である反
射型液晶表示装置とその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reflection type liquid crystal display device as a display device and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】反射型液晶ディスプレイ（以下、反射型
ＬＣＤと称す）は、パネル前面より入射した外光を液晶
パネルにより変調し、パネル裏面に設けた反射板によっ
て反射させて、表示を行う方式である。このため透過型
液晶ディスプレイ（以下、透過型ＬＣＤと称す）に不可
欠なバックライトが不要であり、消費電力の低減が可能
であるので、反射型ＬＣＤは、携帯情報端末や携帯機器
に最適である。2. Description of the Related Art A reflection type liquid crystal display (hereinafter, referred to as a reflection type LCD) is a system in which external light incident from the front of a panel is modulated by a liquid crystal panel and reflected by a reflection plate provided on the back of the panel to perform display. It is. For this reason, a backlight which is indispensable for a transmissive liquid crystal display (hereinafter, referred to as a transmissive LCD) is unnecessary, and power consumption can be reduced. Therefore, a reflective LCD is most suitable for a portable information terminal or a portable device. .
【０００３】しかし、反射型ＬＣＤでは、外光の反射に
より表示を行うために、入射光の調節機能がない。この
ため外光の照度が弱い場合、例えば、屋内や夜間使用す
る場合では、入射する外光が少ないため、表示画面が非
常に暗くなり、視認性が劣化する欠点を有している。こ
のため、反射型ＬＣＤでは、入射した外光をできるだけ
効率よく反射させるように、反射率を高める必要があ
る。However, a reflection type LCD does not have a function of adjusting incident light because a display is performed by reflection of external light. For this reason, when the illuminance of the external light is weak, for example, when the device is used indoors or at night, there is a defect that the display screen becomes very dark and visibility deteriorates because there is little incident external light. For this reason, in the reflection type LCD, it is necessary to increase the reflectance so as to reflect the incident external light as efficiently as possible.
【０００４】反射率を高める手段として、液晶セルや光
学部材での光の伝搬損失を防ぐことと反射板での反射率
を高めることが挙げられる。液晶セルや光学部材による
光の伝播損失を低減する方法としては、偏光板での光の
透過損失が最も大きいことに着目して、偏光板を用いな
いゲストホスト型表示方式（特開平７−１４６４６９号
公報）や偏光板を１枚にした１枚偏光板方式（特開平７
−８４２５２号公報）などが開示されている。[0004] As means for increasing the reflectance, prevention of light propagation loss in a liquid crystal cell or an optical member and enhancement of the reflectance at a reflector are cited. As a method for reducing the propagation loss of light due to the liquid crystal cell or the optical member, a guest-host type display method using no polarizing plate (Patent Document 7) Japanese Patent Application Laid-Open No. Hei 7 (1999)) and a single-polarizing plate system in which a single polarizing plate is
-84252) and the like.
【０００５】また、反射板での反射率を高める方法とし
て、従来液晶セルの外側に設けていた反射板を液晶セル
の内部に設け、かつ反射板の構成材料として、反射率が
高く、電気抵抗値の低いアルミニュウムを用いて、反射
板としての機能と電極としての機能を兼ね備えた反射電
極を形成する方式（特開平８−１０１３８４号公報）が
開示されている。[0005] As a method of increasing the reflectivity of the reflector, a reflector which was conventionally provided outside the liquid crystal cell is provided inside the liquid crystal cell. A method of forming a reflection electrode having both a function as a reflection plate and a function as an electrode using aluminum having a low value (Japanese Patent Application Laid-Open No. 8-101384) is disclosed.
【０００６】さらに、反射電極面に凹凸を設け、光散乱
機能を付与した液晶セルと位相板と偏光板を用いて、表
示を行う方式（特開平５−２１７７０１号公報）及び反
射電極の凹凸をメルト法により形成する方式（特開平９
−１４６０８７号公報）が開示されている。Further, a method of providing a display using a liquid crystal cell having a light scattering function, a phase plate, and a polarizing plate by providing irregularities on the surface of the reflective electrode (Japanese Patent Application Laid-Open No. 5-217701), and Forming by melt method
No. 146087).
【０００７】図５は従来の反射型ＬＣＤ画像部分の一例
を示す構造図である。図５に示すように、偏光フィルム
１とλ／４波長板２と対向基板３とカラーフィルタ４と
透明電極５と液晶層７と凹凸を規則的に配置した凹凸状
の反射電極８０と凹凸状の層間絶縁膜１８０と薄膜トラ
ンジスタ（以下、ＴＦＴ素子と呼ぶ）１５と反射基板１
０とで構成されている。この反射型ＬＣＤは偏光フィル
ム１を１枚にした１枚偏光板方式と凹凸状の反射電極８
０を液晶層７内に設ける方式を併用したものであり、反
射電極に散乱性を付与して拡散反射率を高め、視認性の
向上を意図したものである。なお、ＴＦＴ素子１５は、
ゲート電極１１，ソース電極１３，ドレイン電極１４お
よび層間絶縁膜１２，１６で構成される。FIG. 5 is a structural view showing an example of a conventional reflective LCD image portion. As shown in FIG. 5, a polarizing film 1, a λ / 4 wave plate 2, a counter substrate 3, a color filter 4, a transparent electrode 5, a liquid crystal layer 7, an uneven reflective electrode 80 in which unevenness is regularly arranged, and an uneven shape Interlayer insulating film 180, thin film transistor (hereinafter referred to as TFT element) 15 and reflective substrate 1
0. This reflection type LCD has a single polarizing plate system in which the polarizing film 1 is made into one sheet, and an uneven reflection electrode 8.
This is a combination of a method in which 0 is provided in the liquid crystal layer 7, and is intended to increase the diffuse reflectance by imparting scattering properties to the reflective electrode and to improve the visibility. Note that the TFT element 15 is
It is composed of a gate electrode 11, a source electrode 13, a drain electrode 14, and interlayer insulating films 12, 16.
【０００８】凹凸状の反射電極８０は、凹凸状の層間絶
縁膜１８０上に形成され、層間絶縁膜１８０に設けられ
たコンタクトホール１７を通して、ＴＦＴ素子１５のド
レイン電極１４と電気的に接続されている。反射電極８
０にはＴＦＴ素子１５のスイッチング動作により、電圧
が印加される。反射電極８０は画素電極として液晶層７
に電圧を印加する作用を行う。The uneven reflection electrode 80 is formed on the uneven interlayer insulating film 180, and is electrically connected to the drain electrode 14 of the TFT element 15 through the contact hole 17 provided in the interlayer insulating film 180. I have. Reflective electrode 8
A voltage is applied to 0 by the switching operation of the TFT element 15. The reflection electrode 80 is a liquid crystal layer 7 as a pixel electrode.
The function of applying a voltage to is performed.
【０００９】[0009]
【発明が解決しようとする課題】前記反射型ＬＣＤに入
射した光は、偏光フィルム１を通過して直線偏光にな
り、液晶層７で変調された後、凹凸状の反射電極８０の
表面で反射し、再度、液晶層７通過して偏光フィルム１
に達する。１枚偏光板で白，黒の表示を行うには、反射
電極８０面での反射光は、黒表示の場合には円偏光、白
表示の場合には直線偏光であることが必要である。The light incident on the reflection type LCD passes through the polarizing film 1 and becomes linearly polarized light. After being modulated by the liquid crystal layer 7, the light is reflected by the uneven surface of the reflective electrode 80. After passing through the liquid crystal layer 7 again, the polarizing film 1
Reach In order to display white and black with a single polarizing plate, it is necessary that the reflected light on the surface of the reflective electrode 80 be circularly polarized light for black display and linearly polarized light for white display.
【００１０】しかし上記規則的な凹凸状の反射電極８０
面では入射した偏光の消偏性と光の干渉が発生し、コン
トラスト低下と虹色の着色を引き起こす問題と、前記反
射電極面の製造方法では凹表面形状の不均一性による反
射率むらが発生するという問題を有していた。本発明
は、散乱反射率を高めかつ反射面での消偏性、干渉及び
反射率むらを抑制してコントラスト低下と着色を防ぐ反
射型液晶表示装置とその製造方法を提供することを目的
とする。However, the above-mentioned regular irregularly shaped reflective electrode 80
On the surface, depolarization of incident polarized light and light interference occur, causing a decrease in contrast and iridescent coloring, and in the method for manufacturing the reflective electrode surface, unevenness in reflectance due to unevenness of the concave surface shape occurs. Had the problem of doing so. SUMMARY OF THE INVENTION An object of the present invention is to provide a reflective liquid crystal display device which increases scattering reflectance and suppresses depolarization on a reflective surface, interference and reflectance unevenness to prevent a decrease in contrast and coloring, and a method for manufacturing the same. .
【００１１】[0011]
【課題を解決するための手段】本発明の反射型液晶表示
装置は、反射電極面に反射と散乱の機能を有する平坦部
分と、拡散用凹面に凹構造群のパターンがランダムに設
けられ、所定の面積比率で形成されたことを特徴とする
ものである。According to the reflection type liquid crystal display device of the present invention, a flat portion having reflection and scattering functions on a reflection electrode surface and a concave structure group pattern are randomly provided on a diffusion concave surface. Characterized by the following area ratio:
【００１２】本発明によると、反射電極面には光を鏡面
反射する平坦な反射面と、光を一定の範囲に拡散する凹
構造からなる拡散反射面が得られ、拡散反射面を設ける
ことで拡散反射率を高めかつ凹構造をランダムに配置す
ることにより光の干渉を抑制するとともに、鏡面反射面
を設けることでコントラスト低下の少ない反射型液晶表
示装置が得られ、上記目的が達成される。According to the present invention, a flat reflecting surface for specularly reflecting light and a diffusing reflecting surface having a concave structure for diffusing light in a predetermined range are obtained on the reflecting electrode surface. By increasing the diffuse reflectance and randomly arranging the concave structures, light interference is suppressed, and by providing a specular reflection surface, a reflection-type liquid crystal display device with less reduction in contrast is obtained, and the above object is achieved.
【００１３】本発明の反射型液晶表示装置の製造方法
は、少なくともマトリックス状に配置された薄膜トラン
ジスタとゲート電極とソース電極とを有する反射基板上
に層間絶縁膜を介して、凹構造群とコンタクトホールと
が形成された反射電極を有する反射型液晶表示装置の製
造方法であって、第１に前記基板上に層間絶縁膜として
有機系感光性樹脂を塗布し、前記感光性樹脂をフォトマ
スクを用いて露光、現像して、画素部表示領域の前記凹
構造群及びコンタクトホールに相当する場所に孔を形成
する工程と、第２に前記層間絶縁膜上に樹脂膜として有
機系感光性樹脂を塗布し、前記凹構造群の側面形状を曲
面状にする工程と、前記感光性樹脂をフォトマスクを用
いて露光、現像して、前記画素部表示領域のコンタクト
ホールに相当する場所に孔を形成し、ドライバー実装部
分を含む非画素部表示領域の前記層間絶縁膜を除去する
工程と、前記感光性樹脂に熱処理を施して、架橋反応さ
せる工程と、前記基板に反射電極を形成する工程とを少
なくとも含むことを特徴とするものである。According to the method of manufacturing a reflection type liquid crystal display device of the present invention, a concave structure group and a contact hole are formed on a reflection substrate having at least a matrix of thin film transistors, a gate electrode and a source electrode via an interlayer insulating film. And a method of manufacturing a reflection type liquid crystal display device having a reflection electrode formed by applying an organic photosensitive resin as an interlayer insulating film on the substrate and using the photosensitive resin with a photomask. Exposing and developing to form a hole at a position corresponding to the concave structure group and the contact hole in the pixel portion display area; and secondly, applying an organic photosensitive resin as a resin film on the interlayer insulating film. A step of forming a side surface of the concave structure group into a curved surface; and exposing and developing the photosensitive resin using a photomask to form a contact hole corresponding to a contact hole in the pixel portion display area. Forming a hole in the non-pixel portion display region including the driver mounting portion, removing the interlayer insulating film, performing a heat treatment on the photosensitive resin to cause a crosslinking reaction, and forming a reflective electrode on the substrate. And at least a step of performing
【００１４】本発明によると、少なくともマトリックス
状に配置された薄膜トランジスタとゲート電極とソース
電極とを有する反射基板上に、第１に層間絶縁膜として
有機系感光性樹脂を塗布し、感光性樹脂をフォトマスク
を用いて露光、現像して、画素部表示領域の凹構造群及
びコンタクトホールに相当する場所に孔を形成し、第２
に層間絶縁膜上に樹脂膜として有機系感光性樹脂を塗布
し、凹構造群の側面形状を曲面状にし、感光性樹脂をフ
ォトマスクを用いて露光、現像して、前記画素部表示領
域のコンタクトホールに相当する場所に孔を形成し、ド
ライバー実装部分を含む非画素部表示領域の前記層間絶
縁膜を除去することにより、凹表面形状の不均一性によ
る反射率むらを抑制でき、上記目的が達成される。According to the present invention, first, an organic photosensitive resin is applied as an interlayer insulating film on a reflective substrate having at least a thin film transistor, a gate electrode, and a source electrode arranged in a matrix, and the photosensitive resin is applied. Exposure and development are performed using a photomask to form holes at locations corresponding to the concave structure group and the contact holes in the pixel portion display area.
An organic photosensitive resin is applied as a resin film on the interlayer insulating film, the side surfaces of the concave structure group are curved, the photosensitive resin is exposed and developed using a photomask, and the pixel portion display area is By forming a hole at a location corresponding to a contact hole and removing the interlayer insulating film in a non-pixel portion display area including a driver mounting portion, it is possible to suppress reflectance unevenness due to unevenness of a concave surface shape. Is achieved.
【００１５】[0015]
【発明の実施の形態】本発明の請求項１記載の発明によ
れば、第１の基板の１主面上に画素電極として反射電極
面が形成され、前記反射電極面には反射と散乱との機能
を有する平坦面と拡散用凹面とが所定の面積比率で形成
され、第２の基板の１主面上には少なくとも透明電極か
らなる対向電極が形成され、第１の基板と第２の基板と
の対向内面に液晶層が挟持されていることを特徴とする
反射型液晶表示装置であり、拡散反射率を高めるととも
にコントラスト低下及び干渉による着色を低減すること
ができる。According to the first aspect of the present invention, a reflective electrode surface is formed as a pixel electrode on one principal surface of a first substrate, and the reflective electrode surface has reflection, scattering, and reflection. A flat surface having the function of (1) and a concave surface for diffusion are formed at a predetermined area ratio, and a counter electrode composed of at least a transparent electrode is formed on one main surface of the second substrate. A reflective liquid crystal display device characterized in that a liquid crystal layer is sandwiched between inner surfaces facing a substrate. The reflective liquid crystal display device can increase diffuse reflectance, reduce contrast, and reduce coloring due to interference.
【００１６】本発明の請求項２記載の発明によれば、反
射電極面の拡散用凹面に凹構造群のパターンをランダム
に設け、１画素の面積をＳとし、前記凹構造群の外接円
の直径をＲ１、前記凹構造群の１画素あたりの個数をＮ
としたとき、（数１）Ｄ＝（π（Ｒ１/2）2×Ｎ）/Ｓで
定義される画素あたりの前記凹構造群の面積比率Ｄが
０．３≦Ｄ≦０．８の関係を満たす反射型液晶表示装置
であり、拡散反射率を高めるとともにコントラスト低下
と干渉による着色を低減することができる。According to the second aspect of the present invention, the pattern of the concave structure group is randomly provided on the diffusion concave surface of the reflective electrode surface, the area of one pixel is defined as S, and the circumscribed circle of the concave structure group is formed. The diameter is R1, and the number of the concave structure group per pixel is N
Where D = (π (R1 / 2) 2 × N) / S, where the area ratio D of the concave structure group per pixel is 0.3 ≦ D ≦ 0.8. This is a reflective liquid crystal display device that satisfies the following conditions, and can increase the diffuse reflectance and reduce the reduction in contrast and coloring due to interference.
【００１７】本発明の請求項３記載の発明によれば、凹
構造群の外接円の直径Ｒ１が３μｍ≦Ｒ１≦１２μｍ、
前記凹構造群の１画素あたりの個数Ｎが４０≦Ｎ≦３５
０の関係を満たす反射型液晶表示装置であり、拡散反射
率を高めるとともにコントラスト低下及び干渉による着
色を低減することができる。According to the third aspect of the present invention, the diameter R1 of the circumcircle of the concave structure group is 3 μm ≦ R1 ≦ 12 μm;
The number N of the concave structure groups per pixel is 40 ≦ N ≦ 35.
This is a reflective liquid crystal display device that satisfies the relationship of 0, and can increase the diffuse reflectance, reduce the contrast, and reduce coloring due to interference.
【００１８】本発明の請求項４記載の発明によれば、凹
構造群を有する反射電極面は、少なくともマトリックス
状に配置された薄膜トランジスタとゲート電極とソース
電極上とに層間絶縁膜を介して形成され、前記反射電極
面はコンタクトホールを有し、前記凹構造群の平均深さ
をｂ１、前記コンタクトホールの平均深さをｂ２とする
と、ｂ１＜ｂ２の関係を満たし、かつ０．３μｍ≦ｂ１
≦１．０μｍであり、層間絶縁膜で形成されている請求
項１記載の反射型液晶表示装置であり、拡散反射率を高
めるとともに、コントラスト低下及び干渉による着色を
低減することができる。According to the fourth aspect of the present invention, the reflective electrode surface having the concave structure group is formed at least on the thin film transistors arranged in a matrix, the gate electrode, and the source electrode via the interlayer insulating film. The reflective electrode surface has a contact hole, and assuming that the average depth of the concave structure group is b1 and the average depth of the contact hole is b2, the relationship of b1 <b2 is satisfied, and 0.3 μm ≦ b1
2. The reflection type liquid crystal display device according to claim 1, wherein ≦ 1.0 μm, wherein the reflection type liquid crystal display device is formed of an interlayer insulating film.
【００１９】本発明の請求項５記載の発明によれば、少
なくともマトリックス状に配置された薄膜トランジスタ
とゲート電極とソース電極とを有する基板上に層間絶縁
膜を介して、凹構造群とコンタクトホールが形成された
反射電極を有する反射型液晶表示装置の製造方法であっ
て、第１に前記基板上に層間絶縁膜として有機系感光性
樹脂を塗布し、前記感光性樹脂をフォトマスクを用いて
露光、現像して、画素部表示領域の前記凹構造群及びコ
ンタクトホールに相当する場所に孔を形成する工程と、
第２に前記層間絶縁膜上に樹脂膜として有機系感光性樹
脂を塗布し、前記凹構造群の側面形状を曲面状にする工
程と、前記感光性樹脂をフォトマスクを用いて露光、現
像して、前記画素部表示領域の前記コンタクトホールに
相当する場所に孔を形成し、ドライバー実装部分を含む
非画素部表示領域の前記層間絶縁膜を除去する工程と、
前記感光性樹脂に熱処理を施して、架橋反応させる工程
と、前記基板に反射電極を形成する工程とを少なくとも
含むことを特徴とする反射型液晶表示装置の製造方法で
あり、拡散反射率が高く、消偏性と干渉による着色を低
減できる均一な表面形状を有する反射電極基板を製造す
ることができる。According to the fifth aspect of the present invention, the concave structure group and the contact hole are formed on the substrate having at least the thin film transistor, the gate electrode, and the source electrode arranged in a matrix through the interlayer insulating film. A method of manufacturing a reflective liquid crystal display device having a formed reflective electrode, comprising first applying an organic photosensitive resin as an interlayer insulating film on the substrate, and exposing the photosensitive resin using a photomask. Developing, forming a hole at a location corresponding to the concave structure group and the contact hole in the pixel portion display area;
Second, a step of applying an organic photosensitive resin as a resin film on the interlayer insulating film to make the side surface shape of the concave structure group a curved surface, and exposing and developing the photosensitive resin using a photomask. Forming a hole at a location corresponding to the contact hole in the pixel portion display area, and removing the interlayer insulating film in a non-pixel portion display area including a driver mounting portion;
A method of manufacturing a reflective liquid crystal display device, comprising: performing a heat treatment on the photosensitive resin to cause a crosslinking reaction; and a step of forming a reflective electrode on the substrate. In addition, it is possible to manufacture a reflective electrode substrate having a uniform surface shape that can reduce depolarization and coloring due to interference.
【００２０】本発明の請求項６記載の発明によれば、第
１に前記基板上に層間絶縁膜として有機系感光性樹脂を
塗布し、フォトマスクを用いて画素部表示領域の前記凹
構造群及びコンタクトホールに相当する場所に孔を形成
する工程において、前記基板上に塗布され得る層間絶縁
膜の膜厚をＭとすると、２μｍ≦Ｍ≦４μｍであること
を特徴とする反射型液晶表示装置の製造方法であって、
拡散反射率が高く、消偏性と干渉による着色を低減でき
る均一な表面形状を有する反射電極基板を製造すること
ができる。According to the invention of the sixth aspect of the present invention, first, an organic photosensitive resin is applied as an interlayer insulating film on the substrate, and the concave structure group of the pixel portion display area is coated using a photomask. And a step of forming a hole at a location corresponding to a contact hole, wherein the thickness of an interlayer insulating film that can be applied on the substrate is M, wherein 2 μm ≦ M ≦ 4 μm. The method of manufacturing
A reflective electrode substrate having a high diffuse reflectance and a uniform surface shape capable of reducing depolarization and coloring due to interference can be manufactured.
【００２１】本発明の請求項７記載した発明によれば、
第２に前記層間絶縁膜上に樹脂膜として有機系感光性樹
脂を塗布し、フォトマスクを用いて前記画素部表示領域
の該コンタクトホールに相当する場所に孔を形成し、ド
ライバー実装部分を含む非画素部表示領域の前記層間絶
縁膜を除去する工程において、前記層間絶縁膜上に塗布
され得る有機系感光性樹脂の膜厚をＰとすると、０．５
μｍ≦Ｐ≦１．５μｍであることを特徴とする反射型液
晶表示装置の製造方法であって、拡散反射率が高く、消
偏性と干渉による着色を低減できる均一な表面形状を有
する反射電極基板を製造することができる。According to the invention described in claim 7 of the present invention,
Second, an organic photosensitive resin is applied as a resin film on the interlayer insulating film, and a hole is formed at a location corresponding to the contact hole in the pixel portion display area using a photomask, and a driver mounting portion is included. In the step of removing the interlayer insulating film in the non-pixel portion display region, if the thickness of the organic photosensitive resin that can be applied on the interlayer insulating film is P, 0.5
A method of manufacturing a reflective liquid crystal display device, wherein μm ≦ P ≦ 1.5 μm, wherein the reflective electrode has a high diffuse reflectance and a uniform surface shape capable of reducing depolarization and coloring due to interference. A substrate can be manufactured.
【００２２】本発明の請求項８記載の発明によれば、前
記凹構造群に相当する孔を形成する工程において、フォ
トマスク面に設けた凹構造形成用のパターンは、正多角
形であり、前記正多角形に外接する円の直径Ｒ２とする
と、５μｍ≦Ｒ２≦１０μｍであることを特徴とする反
射型液晶表示装置の製造方法であって、拡散反射率が高
く、消偏性と干渉による着色を低減できる均一な表面形
状を有する反射電極基板を製造することができる。According to the eighth aspect of the present invention, in the step of forming holes corresponding to the concave structure group, the concave structure forming pattern provided on the photomask surface is a regular polygon, A method of manufacturing a reflective liquid crystal display device, wherein a diameter R2 of a circle circumscribing the regular polygon is 5 μm ≦ R2 ≦ 10 μm, wherein a diffuse reflectance is high, and depolarization and interference are caused. A reflective electrode substrate having a uniform surface shape capable of reducing coloring can be manufactured.
【００２３】以下、本発明の反射型液晶表示装置の各実
施の形態について説明する。Hereinafter, embodiments of the reflection type liquid crystal display device of the present invention will be described.
【００２４】（実施の形態１）図１は本発明の実施の形
態１における反射型液晶表示装置の画素部分の１例を示
す構造図である。図１に示すように画素部分は反射基板
１０上の反射電極８と対向基板３上の透明電極５、液晶
層７とから構成される。対向基板３側より入射した光を
液晶層７で変調し、反射電極８面と対向基板３の方向に
反射させて表示を行う。(Embodiment 1) FIG. 1 is a structural diagram showing an example of a pixel portion of a reflection type liquid crystal display device according to Embodiment 1 of the present invention. As shown in FIG. 1, the pixel portion includes a reflective electrode 8 on a reflective substrate 10, a transparent electrode 5 on a counter substrate 3, and a liquid crystal layer 7. Light incident from the counter substrate 3 side is modulated by the liquid crystal layer 7 and reflected on the surface of the reflective electrode 8 and in the direction of the counter substrate 3 to perform display.
【００２５】図１に示す対向基板３には無アルカリガラ
スを用い、この対向基板３上に顔料分散レジストからな
る赤、緑、青のストライプ状のカラーフィルタ４が形成
されている。The counter substrate 3 shown in FIG. 1 is made of non-alkali glass, and a red, green and blue striped color filter 4 made of a pigment-dispersed resist is formed on the counter substrate 3.
【００２６】その後、カラーフィルタ４上に酸化インジ
ュウム錫（以下、ＩＴＯと呼ぶ）膜を成膜し透明電極５
を形成した。Thereafter, an indium tin oxide (hereinafter referred to as ITO) film is formed on the color filter 4 and the transparent electrode 5 is formed.
Was formed.
【００２７】次に、無アルカリガラスを用いた反射基板
１０の上に所定の方法により、アルミニュウムとタンタ
ルからなるゲート電極１１，窒化シリコンからなる層間
絶縁膜１２を介してチタンとアルミニュウムからなるソ
ース電極１３およびドレイン電極１４をマトリックス状
に配置し、ゲート電極１１とソース電極１２との各交差
部にアモルファスシリコンからなるＴＦＴ素子１５を形
成した。Next, a source electrode made of titanium and aluminum is formed on a reflective substrate 10 made of non-alkali glass by a predetermined method via a gate electrode 11 made of aluminum and tantalum and an interlayer insulating film 12 made of silicon nitride. 13 and the drain electrode 14 were arranged in a matrix, and a TFT element 15 made of amorphous silicon was formed at each intersection of the gate electrode 11 and the source electrode 12.
【００２８】次に反射基板１０上に窒化シリコンからな
る無機の層間絶縁膜１６を形成し、フォトレジストと所
定のフォトマスクを用いて紫外線を照射し、その後、ド
ライエッチングにより窒化シリコンをエッチングし、ド
レイン電極１４上にコンタクトホール１７形成した。無
機の層間絶縁膜１６は、ＴＦＴ素子１５の層間絶縁膜と
して機能するとともに、ドライバー実装部分での電極保
護膜としても機能する。Next, an inorganic interlayer insulating film 16 made of silicon nitride is formed on the reflective substrate 10 and irradiated with ultraviolet rays using a photoresist and a predetermined photomask. Thereafter, the silicon nitride is etched by dry etching. A contact hole 17 was formed on the drain electrode 14. The inorganic interlayer insulating film 16 functions not only as an interlayer insulating film of the TFT element 15 but also as an electrode protection film in a driver mounting portion.
【００２９】反射基板１０の全面に感光性アクリル樹脂
（例えば、ＰＣ３３５：ＪＳＲ（株）製）を塗布して膜
厚Ｍ約３μｍの有機の層間絶縁膜１８を形成した。A photosensitive acrylic resin (for example, PC335: manufactured by JSR Corporation) was applied to the entire surface of the reflective substrate 10 to form an organic interlayer insulating film 18 having a thickness of about 3 μm.
【００３０】次に、図２は図１の実施の形態１で使用し
たフォトマスクの平面図を示すものである。図２に示す
ような面内に形状が正六角形でその外接円の直径Ｒ１
が、８μｍの多数の凹構造形成用パターンが設けられた
フォトマスクを用いて紫外線を８０〜１００ｍJ/cｍ2照
射した。FIG. 2 is a plan view of the photomask used in the first embodiment shown in FIG. In the plane as shown in FIG. 2, the shape is a regular hexagon and the diameter R1 of its circumscribed circle
However, ultraviolet rays were irradiated at 80 to 100 mJ / cm 2 using a photomask provided with a large number of concave structure forming patterns of 8 μm.
【００３１】ここで、フォトマスクには正六角形の凹構
造群の外接円の直径Ｒ１が８μｍ、１画素あたりの凹構
造群の面積比率Ｄが０．４となるよう凹構造群の１画素
あたりの個数Ｎを９６個としたパターンをランダムに配
置した。Here, the diameter of the circumscribed circle R1 of the concave structure group of the regular hexagonal concave structure group is 8 μm, and the area ratio D of the concave structure group per pixel is 0.4. Were randomly arranged.
【００３２】次に有機アルカリを用いて一定時間現像を
行った。このとき、反射基板１０上の層間絶縁膜１２に
は、画素部表示領域に凹構造群の孔のみが形成されてい
た。次に、孔を形成した無機の層間絶縁膜１６の全面に
感光性アクリル樹脂（例えば、ＰＣ３３５：ＪＳＲ
（株）製）を塗布して膜厚約１μｍの有機の層間絶縁膜
１８を形成し、凹構造の側面形状を曲面状に形成した。Next, development was performed for a certain period of time using an organic alkali. At this time, in the interlayer insulating film 12 on the reflective substrate 10, only the holes of the concave structure group were formed in the pixel portion display area. Next, a photosensitive acrylic resin (for example, PC335: JSR) is formed on the entire surface of the inorganic interlayer insulating film 16 in which the holes are formed.
Was applied to form an organic interlayer insulating film 18 having a thickness of about 1 μm, and the side surface of the concave structure was formed into a curved surface.
【００３３】次に画素部表示領域のコンタクトホール１
７とドライバー実装部分を含む非画素部表示領域のみ開
口したフォトマスクを用いて、画素部表示領域のコンタ
クトホールに相当する場所とドライバー実装部分を含む
非画素部表示領域の層間絶縁膜部分を露光、現像し、感
光性樹脂を除去した。反射基板１０上の層間絶縁膜１２
に画素部表示領域に凹構造群を形成し、ドライバー実装
部分を含む非画素部表示領域の層間絶縁膜部分を除去し
た後、無機の層間絶縁膜１６の全面に感光性樹脂を塗布
して有機の層間絶縁膜１８を形成すると、画素部表示領
域とドライバー実装部分を含む非画素部表示領域間の段
差により塗布むらが発生し、画素部表示領域の凹構造の
表面形状が不均一となり、反射率むらが発生した。Next, the contact hole 1 in the pixel area display area
Exposure of a portion corresponding to the contact hole of the pixel display region and an interlayer insulating film portion of the non-pixel display region including the driver mounting portion using a photomask having an opening only in the non-pixel display region including the driver mounting portion 7 and the driver mounting portion Developed to remove the photosensitive resin. Interlayer insulating film 12 on reflective substrate 10
After forming a concave structure group in the pixel portion display region, removing the interlayer insulating film portion in the non-pixel portion display region including the driver mounting portion, a photosensitive resin is applied to the entire surface of the inorganic interlayer insulating film 16 to form an organic layer. When the interlayer insulating film 18 is formed, uneven coating occurs due to a step between the pixel portion display region and the non-pixel portion display region including the driver mounting portion, and the surface shape of the concave structure of the pixel portion display region becomes non-uniform. An uneven rate occurred.
【００３４】このことから、反射基板１０上の層間絶縁
膜１２に画素部表示領域に凹構造群の孔のみをまず形成
し、次に層間絶縁膜１２の全面に感光性樹脂を塗布して
凹構造の側面形状を曲面状にすると同時に、フォトマス
クを用いて画素部表示領域のコンタクトホール１７とド
ライバー実装部分を含む非画素部表示領域の層間絶縁膜
部分を露光、現像し、感光性樹脂を除去することで、画
素部表示領域の凹構造の表面形状が均一になることがわ
かった。その後、２００℃のクリーンオーブンの中で熱
処理を行いて、感光性アクリル樹脂を架橋させた。熱処
理後、凹構造、コンタクトホールに相当する部分では、
それぞれ平均深さ約０．６〜０．８μｍと３．２μｍ、
凹構造群の外接円の直径Ｒ１が１０μｍの孔が形成され
ていた。Accordingly, only the holes of the concave structure group are first formed in the interlayer insulating film 12 on the reflective substrate 10 in the pixel region display area, and then a photosensitive resin is applied to the entire surface of the interlayer insulating film 12 to form the concave. At the same time that the side surface of the structure is curved, the interlayer insulating film portion of the non-pixel display region including the contact hole 17 of the pixel display region and the driver mounting portion is exposed and developed using a photomask, and the photosensitive resin is removed. It was found that the removal made the surface shape of the concave structure in the pixel portion display area uniform. Thereafter, heat treatment was performed in a clean oven at 200 ° C. to crosslink the photosensitive acrylic resin. After the heat treatment, in the part corresponding to the concave structure and the contact hole,
Average depths of about 0.6-0.8 μm and 3.2 μm, respectively.
A hole having a diameter R1 of a circumscribed circle of the concave structure group of 10 μm was formed.
【００３５】次に、有機の層間絶縁膜１８上にアルミニ
ュウムを成膜し、フォトレジストと所定のフォトマスク
を用いて紫外線を照射し、その後燐酸系のエッチング液
を用いて、反射電極８形成した。Next, aluminum was formed on the organic interlayer insulating film 18 and irradiated with ultraviolet rays using a photoresist and a predetermined photomask. Thereafter, the reflective electrode 8 was formed using a phosphoric acid-based etchant. .
【００３６】透明電極５および反射電極８上には固形分
濃度５重量％のポリアミック酸溶液（ＳＥ−７２１１：
日産化学工業（株））を印刷し、２２０℃で硬化した、
ＴＮ配向になるようにレーヨン布を用いて回転ラビング
して配向処理を行い、ポリイミドからなる膜厚１２０ｎ
ｍの配向膜を形成した。On the transparent electrode 5 and the reflective electrode 8, a polyamic acid solution having a solid content concentration of 5% by weight (SE-7221:
Nissan Chemical Industry Co., Ltd.) printed and cured at 220 ° C.
Rotational rubbing is performed using rayon cloth so as to have a TN orientation, and orientation treatment is performed.
m of alignment film was formed.
【００３７】次に対向基板３の周辺部に熱硬化型のシー
ル材（例えばストラクトボンド：三井東圧化学（株）
製）を液晶注入口を設けて印刷形成し、反射基板１０上
には直径３μｍのプラスチックからなる球状のスペーサ
を１５０〜２００個／ｍｍ2 分散して、対向基板３と反
射基板１０を互いに貼り合わせ、１５０℃でシール材を
硬化した。Next, a thermosetting sealing material (eg, Struct Bond: Mitsui Toatsu Chemicals, Inc.)
Is formed by providing a liquid crystal injection port, and 150 to 200 spherical spacers made of plastic having a diameter of 3 μm are dispersed on the reflective substrate 10 to 200 / mm 2 , and the opposing substrate 3 and the reflective substrate 10 are attached to each other. Together, the sealing material was cured at 150 ° C.
【００３８】次に屈折率異方性が０．０９であるフッ素
系ネマチック液晶組成物にカイラル組成物を添加した液
晶層７を真空注入して、紫外線硬化樹脂により注入口を
封口して、液晶セルを作製した。Next, a liquid crystal layer 7 in which a chiral composition is added to a fluorine-based nematic liquid crystal composition having a refractive index anisotropy of 0.09 is vacuum-injected, and the injection port is sealed with an ultraviolet curable resin. A cell was prepared.
【００３９】上記により形成した液晶セルの対向基板３
に、λ／４波長板２を積層した偏光フィルム１を貼付
け、アクティブマトリックスタイプの反射型ＬＣＤを作
製した。The opposing substrate 3 of the liquid crystal cell formed as described above.
Then, a polarizing film 1 on which a λ / 4 wavelength plate 2 was laminated was stuck to produce an active matrix type reflection type LCD.
【００４０】図３は、本実施の形態１における反射電極
８の反射特性である。反射電極の反射特性は、図４に示
す測定系により行った。比較例１として凹構造を設けな
い反射電極の反射特性と、比較例２として凹凸状の反射
電極の反射特性をあわせて示したものである。本発明の
実施の形態１では、鏡面成分と拡散成分の両方を有して
いるのに対して、凹構造を設けない反射電極特性（比較
例１）は鏡面性のみ有し、凹凸状の反射電極（比較例
２）では、等方的な拡散性を有する。FIG. 3 shows the reflection characteristics of the reflection electrode 8 according to the first embodiment. The reflection characteristics of the reflection electrode were measured by a measurement system shown in FIG. Comparative Example 1 shows the reflection characteristics of a reflective electrode having no concave structure, and Comparative Example 2 shows the reflective characteristics of a concave-convex reflective electrode. Embodiment 1 of the present invention has both a specular component and a diffuse component, whereas the reflective electrode characteristic without a concave structure (Comparative Example 1) has only a specular property, and has a concave-convex reflection. The electrode (Comparative Example 2) has isotropic diffusion.
【００４１】なお、図４の測定においては反射電極８上
に直接、偏光フィルム１を置き、光源４０から光の反射
率を受光器４１でもって測定した結果である。測定には
色彩測色計（CＭ-508Ｄ、ミノルタ（株）製）を使用
し、標準白色板を基準とした。The measurement in FIG. 4 is a result obtained by placing the polarizing film 1 directly on the reflective electrode 8 and measuring the reflectance of light from the light source 40 with the light receiver 41. A colorimeter (CM-508D, manufactured by Minolta Co., Ltd.) was used for the measurement, and a standard white plate was used as a reference.
【００４２】本実施の形態１での反射率は、０．９％で
あり、比較例２の凹凸状の反射電極の反射率３．９％に
対して、十分低い値を得ることができた。また、１画素
の面積をＳとし、凹構造群の外接円の直径をＲ１、凹構
造群の１画素あたりの個数をＮとしたとき、１画素あた
りの凹構造群の面積比率Ｄ（Ｄ＝（π（Ｒ１/2）2×
Ｎ）/Ｓ）が、Ｄ＜０．３では、拡散反射成分が弱く、
またＤ＞０．８では拡散反射成分が強すぎ、偏光変化が
大きかった。このことから、面積比率Ｄは０．３≦Ｄ≦
０．８が好ましかった。The reflectivity in the first embodiment is 0.9%, which is sufficiently lower than the reflectivity of the uneven electrode of Comparative Example 2 of 3.9%. . When the area of one pixel is S, the diameter of the circumscribed circle of the concave structure group is R1, and the number of the concave structure group per pixel is N, the area ratio D of the concave structure group per pixel (D = (Π (R1 / 2) 2 ×
N) / S) when D <0.3, the diffuse reflection component is weak,
When D> 0.8, the diffuse reflection component was too strong, and the polarization change was large. From this, the area ratio D is 0.3 ≦ D ≦
0.8 was preferred.
【００４３】本実施の形態のアクティブマトリックス型
反射型液晶表示装置を駆動して、拡散光源下でのパネル
反射率を測定したところ、黒状態で反射率が１．３％、
白状態で反射率が１６．９％であり、反射率の高い良好
なパネル反射特性が実現できた。また、干渉による着
色、反射率むらも見られず、無彩色な白黒表示を実現す
ることができた。When the active matrix type reflection type liquid crystal display device of this embodiment was driven and the panel reflectance under a diffused light source was measured, the reflectance was 1.3% in a black state.
The reflectance was 16.9% in the white state, and good panel reflection characteristics with high reflectance could be realized. In addition, achromatic black-and-white display was able to be realized without coloring due to interference and uneven reflectance.
【００４４】（実施の形態２）次に、実施の形態２につ
いて説明する。構成は実施の形態１と同じであるが、相
違点は凹構造形成に正八角形の外接円の直径Ｒ２が異な
るフォトマスクを用いた点である。本実施の形態２で
は、外接円の直径Ｒ２が１０μｍのパターンを有するフ
ォトマスクを用いた。具体的には、１画素あたりの凹構
造群の面積比率Ｄが０．４となるよう６１個の正八角形
パターンをランダムに配置した。実施の形態１と同じ手
順によって、反射型液晶表示装置を作製したところ、反
射電極面には、凹構造群の外接円の直径Ｒ１が１２μｍ
で、平均深さ約０．６〜０．９μｍの凹構造群が形成さ
れていた。(Embodiment 2) Next, Embodiment 2 will be described. The structure is the same as that of the first embodiment, except that a photomask having a different diameter R2 of a regular octagonal circumcircle is used for forming the concave structure. In the second embodiment, a photomask having a pattern in which the diameter R2 of the circumscribed circle is 10 μm is used. Specifically, 61 regular octagonal patterns were randomly arranged such that the area ratio D of the concave structure group per pixel was 0.4. When a reflective liquid crystal display device was manufactured in the same procedure as in Embodiment 1, the diameter R1 of the circumscribed circle of the concave structure group was 12 μm on the reflective electrode surface.
Thus, a concave structure group having an average depth of about 0.6 to 0.9 μm was formed.
【００４５】本実施の形態２においても、アクティブマ
トリックス型反射型液晶表示装置を駆動して、拡散光源
下でのパネル反射率を測定したところ、黒状態で反射率
が１．２％、白状態で反射率が１６．２％であり、反射
率の高い良好なパネル反射特性が実現できた。また、干
渉による着色、反射率むらも見られず、無彩色な白黒表
示を実現することができた。Also in the second embodiment, when the active matrix type reflection type liquid crystal display device was driven and the panel reflectance under a diffused light source was measured, the reflectance was 1.2% in a black state and 1.2% in a white state. , The reflectance was 16.2%, and good panel reflection characteristics with high reflectance could be realized. In addition, achromatic black-and-white display was able to be realized without coloring due to interference and uneven reflectance.
【００４６】（実施の形態３）次に、実施の形態３につ
いて説明する。構成は実施の形態１と同じであるが、相
違点は凹構造形成に正六角形の外接円の直径Ｒ２が異な
るフォトマスクを用いた点である。本実施の形態３で
は、外接円の直径Ｒ２が５μｍのパターンを有するフォ
トマスクを用いた。具体的には、１画素あたりの凹構造
群の面積比率Ｄが０．４となるよう２９０個の正六角形
パターンをランダムに配置した。実施の形態１と同じ手
順によって、反射型液晶表示装置を作製したところ、反
射電極面には、凹構造群の外接円の直径Ｒ１が５μｍ
で、平均深さ約０．５〜０．８μｍの凹構造群が形成さ
れていた。Third Embodiment Next, a third embodiment will be described. The structure is the same as that of the first embodiment, except that a photomask having a different diameter R2 of a circumscribed circle of a regular hexagon is used for forming the concave structure. In the third embodiment, a photomask having a pattern in which the diameter R2 of the circumscribed circle is 5 μm is used. Specifically, 290 regular hexagonal patterns were randomly arranged such that the area ratio D of the concave structure group per pixel was 0.4. When a reflective liquid crystal display device was manufactured by the same procedure as in Embodiment 1, the diameter R1 of the circumcircle of the concave structure group was 5 μm on the reflective electrode surface.
As a result, a concave structure group having an average depth of about 0.5 to 0.8 μm was formed.
【００４７】本実施の形態３においても、アクティブマ
トリックス型反射型液晶表示装置を駆動して、拡散光源
下でのパネル反射率を測定したところ、黒状態で反射率
が１．７％、白状態で反射率が１５．４％であり、反射
率の比較的高い良好なパネル反射特性が実現できた。ま
た、干渉による着色、反射率むらも見られず、無彩色な
白黒表示を実現することができた。Also in the third embodiment, when the active matrix type reflection type liquid crystal display was driven and the panel reflectance under a diffused light source was measured, the reflectance was 1.7% in a black state and white in a white state. , The reflectance was 15.4%, and good panel reflection characteristics having a relatively high reflectance could be realized. In addition, achromatic black-and-white display was realized without any coloring or uneven reflectance due to interference.
【００４８】（実施の形態４）次に、実施の形態４につ
いて説明する。構成は実施の形態１と同じであるが、相
違点は第１に反射基板１０上に塗布された層間絶縁膜１
２の膜厚Ｍを２μｍ、第２に層間絶縁膜上に塗布された
樹脂膜の膜厚Ｐを０．５μｍとした点である。本実施の
形態４では、外接円の直径Ｒ２が８μｍのパターンを有
するパターンを有するフォトマスクを用いた。具体的に
は、１画素あたりの凹構造群の面積比率Ｄが０．４とな
るよう９６個の正六角形パターンをランダムに配置し
た。実施の形態１と同じ手順によって、反射型液晶表示
装置を作製したところ、反射電極面には、凹構造群の外
接円の直径Ｒ１が１０．１μｍで、平均深さ約０．３〜
０．６μｍの凹構造群が形成されていた。(Fourth Embodiment) Next, a fourth embodiment will be described. The structure is the same as that of the first embodiment, except that the first difference is that the interlayer insulating film 1 coated on the reflective substrate 10
Second, the thickness M was 2 μm, and second, the thickness P of the resin film applied on the interlayer insulating film was 0.5 μm. In the fourth embodiment, a photomask having a pattern having a pattern in which the diameter R2 of the circumscribed circle is 8 μm is used. Specifically, 96 regular hexagonal patterns were randomly arranged such that the area ratio D of the concave structure group per pixel was 0.4. When a reflective liquid crystal display device was manufactured by the same procedure as in Embodiment 1, the diameter R1 of the circumscribed circle of the concave structure group was 10.1 μm on the reflective electrode surface, and the average depth was approximately 0.3 to 0.3 μm.
A concave structure group having a thickness of 0.6 μm was formed.
【００４９】本実施の形態４においても、アクティブマ
トリックス型反射型液晶表示装置を駆動して、拡散光源
下でのパネル反射率を測定したところ、黒状態で反射率
が１．３％、白状態で反射率が１４．５％であり、反射
率の高い良好なパネル反射特性が実現できた。また、干
渉による着色、反射率むらも見られず、無彩色な白黒表
示を実現することができた。Also in the fourth embodiment, when the active matrix type reflection type liquid crystal display device was driven to measure the panel reflectance under a diffused light source, the reflectance was 1.3% in a black state and white in a white state. , The reflectance was 14.5%, and good panel reflection characteristics with high reflectance could be realized. In addition, achromatic black-and-white display was able to be realized without coloring due to interference and uneven reflectance.
【００５０】（実施の形態５）次に、実施の形態５につ
いて説明する。構成は実施の形態１と同じであるが、相
違点は第１に反射基板１０上に塗布された層間絶縁膜１
２の膜厚Ｍを４μｍ、第２に層間絶縁膜上に塗布された
樹脂膜の膜厚Ｐを１．５μｍとした点である。本実施の
形態５では、外接円の直径Ｒ２が８μｍのパターンを有
するフォトマスクを用いた。具体的には、１画素あたり
の凹構造群の面積比率Ｄが０．４となるよう９６個の正
六角形パターンをランダムに配置した。実施の形態１と
同じ手順によって、反射型液晶表示装置を作製したとこ
ろ、反射電極面には、凹構造群の外接円の直径Ｒ１が１
０μｍで、平均深さ約０．７〜１．０μｍの凹構造群が
形成されていた。(Fifth Embodiment) Next, a fifth embodiment will be described. The structure is the same as that of the first embodiment, except that the first difference is that the interlayer insulating film 1 applied on the reflective substrate 10
Second, the thickness M was 4 μm, and second, the thickness P of the resin film applied on the interlayer insulating film was 1.5 μm. In the fifth embodiment, a photomask having a pattern in which the circumscribed circle has a diameter R2 of 8 μm is used. Specifically, 96 regular hexagonal patterns were randomly arranged such that the area ratio D of the concave structure group per pixel was 0.4. When a reflective liquid crystal display device was manufactured in the same procedure as in Embodiment 1, the diameter R1 of the circumscribed circle of the concave structure group was 1 on the reflective electrode surface.
A concave structure group having an average depth of about 0.7 to 1.0 μm was formed at 0 μm.
【００５１】本実施の形態５においても、アクティブマ
トリックス型反射型液晶表示装置を駆動して、拡散光源
下でのパネル反射率を測定したところ、黒状態で反射率
が１．９％、白状態で反射率が１３．７％であり、反射
率の高い良好なパネル反射特性が実現できた。また、干
渉による着色、反射率むらも見られず、無彩色な白黒表
示を実現することができた。Also in the fifth embodiment, when the active matrix type reflection type liquid crystal display device was driven to measure the panel reflectance under a diffused light source, the reflectance was 1.9% in a black state and 1.9% in a white state. , The reflectance was 13.7%, and good panel reflection characteristics with high reflectance could be realized. In addition, achromatic black-and-white display was able to be realized without coloring due to interference and uneven reflectance.
【００５２】上記各実施の形態の結果より、１画素あた
りの凹構造群の面積比率Ｄが０．３≦Ｄ≦０．８、凹構
造群が、直径に関して外接円の直径Ｒ１が５μｍ≦Ｒ１
≦１２μｍ、平均深さｂ１に関して０．３μｍ≦ｂ１≦
１．０μｍであると、拡散反射率及びコントラストが高
く、かつ干渉による着色のない特性を実現することがで
きた。According to the results of the above embodiments, the area ratio D of the concave structure group per pixel is 0.3 ≦ D ≦ 0.8, and the concave structure group has a diameter R1 of a circumscribed circle of 5 μm ≦ R1.
≦ 12 μm, 0.3 μm ≦ b1 ≦ with respect to average depth b1
When the thickness is 1.0 μm, it is possible to realize characteristics having high diffuse reflectance and high contrast and no coloring due to interference.
【００５３】また、フォトマスク状の凹構造群形成用正
多角形に外接する円の直径Ｒ２が、５μｍ≦Ｒ２≦１０
μｍであれば、コントラスト低下と干渉による着色を抑
制し、かつ拡散反射率の高い反射型液晶表示装置を実現
できることが分かった。The diameter R2 of a circle circumscribing the photomask-shaped regular polygon for forming a concave structure group is 5 μm ≦ R2 ≦ 10
It has been found that when the thickness is μm, the reflection type liquid crystal display device which suppresses the reduction in contrast and coloring due to interference and has a high diffuse reflectance can be realized.
【００５４】また、第１に反射基板１０上に塗布された
層間絶縁膜１２の膜厚Ｍが２μｍ≦Ｍ≦４μｍ、第２に
層間絶縁膜１２上に塗布された樹脂膜の膜厚Ｐが０．５
μｍ≦Ｐ≦１．５μｍであれば、コントラスト低下と干
渉による着色を抑制し、かつ拡散反射率の高い反射型液
晶表示装置を実現できることが分かった。First, the thickness M of the interlayer insulating film 12 applied on the reflective substrate 10 is 2 μm ≦ M ≦ 4 μm, and second, the thickness P of the resin film applied on the interlayer insulating film 12 is 0.5
When μm ≦ P ≦ 1.5 μm, it was found that a reflection type liquid crystal display device having a high diffuse reflectance and suppressing a decrease in contrast and interference due to interference can be realized.
【００５５】[0055]
【発明の効果】以上説明したように本発明によれば、反
射電極面に反射と散乱の機能を有する平坦部分と、拡散
用凹面に凹構造群のパターンがランダムに設けられ、所
定の面積比率で形成することにより、拡散反射率が高く
かつコントラスト低下および干渉による着色、反射率む
らを抑制した反射型液晶表示装置を実現することができ
る。As described above, according to the present invention, a flat portion having reflection and scattering functions on the reflective electrode surface and a concave structure group pattern are randomly provided on the diffusion concave surface, and a predetermined area ratio is obtained. In this case, it is possible to realize a reflection type liquid crystal display device having a high diffuse reflectance and suppressing a decrease in contrast, coloring due to interference, and uneven reflectance.
【図１】本発明の実施の形態１における反射型液晶表示
装置の画素部分の一例を示す構造図FIG. 1 is a structural diagram showing an example of a pixel portion of a reflective liquid crystal display device in Embodiment 1 of the present invention.
【図２】本発明の実施の形態１で使用したフォトマスク
の平面図FIG. 2 is a plan view of a photomask used in Embodiment 1 of the present invention.
【図３】本発明の実施の形態１における反射電極の反射
特性図FIG. 3 is a reflection characteristic diagram of the reflective electrode according to the first embodiment of the present invention.
【図４】本発明の実施の形態１における反射電極の反射
特性の測定図FIG. 4 is a measurement diagram of a reflection characteristic of a reflection electrode according to the first embodiment of the present invention.
【図５】従来の反射型液晶表示装置の画素部分の一例を
示す構造図FIG. 5 is a structural diagram showing an example of a pixel portion of a conventional reflective liquid crystal display device.
１ 偏光フィルム ２ λ／４波長板 ３ 対向基板 ４ カラーフィルタ ５ 透明電極 ７ 液晶層 ８ 反射電極 １０ 反射基板 １１ ゲート電極 １２ 層間絶縁膜 １３ ソース電極 １４ ドレイン電極 １５ ＴＦＴ素子 １６ 無機の層間絶縁膜 １７ コンタクトホール １８ 有機の層間絶縁膜 １９ 凹構造 ２０ 鏡面性を有する平坦な部分 ２１ 外接円 ２２ 凹構造パターン DESCRIPTION OF SYMBOLS 1 Polarizing film 2 λ / 4 wavelength plate 3 Counter substrate 4 Color filter 5 Transparent electrode 7 Liquid crystal layer 8 Reflection electrode 10 Reflection substrate 11 Gate electrode 12 Interlayer insulating film 13 Source electrode 14 Drain electrode 15 TFT element 16 Inorganic interlayer insulating film 17 Contact hole 18 Organic interlayer insulating film 19 Concave structure 20 Flat portion having mirror surface 21 Bounding circle 22 Concave structure pattern
フロントページの続き (72)発明者 山口 久典 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 関目 智明 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Ｆターム(参考） 2H091 FA02Y FA16Y FB04 FC12 FC23 FC26 GA06 GA07 GA08 GA13 HA07 KA10 LA17 LA21 5G435 AA02 BB12 BB16 FF03 FF06 HH04 Continued on the front page (72) Inventor Hisanori Yamaguchi 1006 Kadoma Kadoma, Osaka Prefecture Inside Matsushita Electric Industrial Co., Ltd. ) 2H091 FA02Y FA16Y FB04 FC12 FC23 FC26 GA06 GA07 GA08 GA13 HA07 KA10 LA17 LA21 5G435 AA02 BB12 BB16 FF03 FF06 HH04
Claims (8)
反射電極面が形成され、前記反射電極面には反射と散乱
との機能を有する平坦面と拡散用凹面とが所定の面積比
率で形成され、第２の基板の１主面上には少なくとも透
明電極からなる対向電極が形成され、第１の基板と第２
の基板との対向内面に液晶層が挟持されていることを特
徴とする反射型液晶表示装置。1. A reflection electrode surface is formed as a pixel electrode on one main surface of a first substrate, and the reflection electrode surface has a predetermined area having a flat surface having a function of reflection and scattering and a concave surface for diffusion. A counter electrode made of at least a transparent electrode is formed on one main surface of the second substrate, and the first substrate and the second
A liquid crystal layer is sandwiched between inner surfaces facing the substrate.
群のパターンがランダムに設けられており、１画素の面
積をＳとし、前記凹構造群の外接円の直径をＲ１、前記
凹構造群の１画素あたりの個数をＮとしたとき、（数
１）で定義される１画素あたりの前記凹構造群の面積比
率Ｄが０．３≦Ｄ≦０．８であることを特徴とする請求
項１記載の反射型液晶表示装置。 【数１】Ｄ＝（π（Ｒ１/2）2×Ｎ）/Ｓ2. The diffusion concave surface of the reflection electrode surface is provided with a pattern of a concave structure group at random, the area of one pixel is S, the diameter of a circumscribed circle of the concave structure group is R1, and the concave shape is When the number of the structure groups per pixel is N, the area ratio D of the concave structure group per pixel defined by (Equation 1) is 0.3 ≦ D ≦ 0.8. The reflective liquid crystal display device according to claim 1. D = (π (R1 / 2) 2 × N) / S
ｍ≦Ｒ１≦１２μｍ、前記凹構造の１画素あたりの個数
Ｎが４０≦Ｎ≦３５０の関係を満たすことを特徴とする
請求項１または２記載の反射型液晶表示装置。3. A diameter R1 of a circumscribed circle of the concave structure group is 5 μm.
3. The reflective liquid crystal display device according to claim 1, wherein m.ltoreq.R1.ltoreq.12 .mu.m and the number N of the concave structures per pixel satisfies a relationship of 40.ltoreq.N.ltoreq.350.
は、少なくともマトリックス状に配置された薄膜トラン
ジスタとゲート電極とソース電極上とに層間絶縁膜を介
して形成され、前記反射電極面はコンタクトホールを有
し、前記凹構造群の平均深さをｂ１、前記コンタクトホ
ールの平均深さをｂ２とすると、ｂ１＜ｂ２の関係を満
たし、０．３μｍ≦ｂ１≦１．０μｍであり、層間絶縁
膜で形成されていることを特徴とする請求項１,２また
は３記載の反射型液晶表示装置。4. The reflective electrode surface having the concave structure group is formed at least over a thin film transistor, a gate electrode, and a source electrode arranged in a matrix via an interlayer insulating film, and the reflective electrode surface is provided with a contact hole. When the average depth of the concave structure group is b1 and the average depth of the contact hole is b2, the relationship of b1 <b2 is satisfied, 0.3 μm ≦ b1 ≦ 1.0 μm, and the interlayer insulating film 4. The reflective liquid crystal display device according to claim 1, wherein the reflective liquid crystal display device is formed of:
薄膜トランジスタとゲート電極とソース電極とを有する
基板上に層間絶縁膜を介して、凹構造群とコンタクトホ
ールが形成された反射電極を有する反射型液晶表示装置
の製造方法であって、第１に前記基板上に層間絶縁膜と
して有機系感光性樹脂を塗布し、前記感光性樹脂をフォ
トマスクを用いて露光、現像して、画素部表示領域の前
記凹構造群に相当する場所に孔を形成する工程と、第２
に前記層間絶縁膜上に樹脂膜として有機系感光性樹脂を
塗布し、前記凹構造群の側面形状を曲面状にする工程
と、前記感光性樹脂をフォトマスクを用いて露光、現像
して、前記画素部表示領域のコンタクトホールに相当す
る場所に孔を形成し、ドライバー実装部分を含む非画素
部表示領域の前記層間絶縁膜を除去する工程と、前記感
光性樹脂に熱処理を施して、架橋反応させる工程と、前
記基板に反射電極を形成する工程とを少なくとも含むこ
とを特徴とする反射型液晶表示装置の製造方法。5. A reflective liquid crystal display having a concave structure group and a reflective electrode in which a contact hole is formed on a substrate having at least a thin film transistor, a gate electrode, and a source electrode arranged in a matrix via an interlayer insulating film. A method for manufacturing a device, comprising first applying an organic photosensitive resin as an interlayer insulating film on the substrate, exposing and developing the photosensitive resin using a photomask, Forming a hole at a location corresponding to the concave structure group;
A step of applying an organic photosensitive resin as a resin film on the interlayer insulating film, and forming a curved side surface shape of the concave structure group, and exposing and developing the photosensitive resin using a photomask, Forming a hole at a location corresponding to a contact hole in the pixel portion display area, removing the interlayer insulating film in a non-pixel portion display region including a driver mounting portion, and subjecting the photosensitive resin to a heat treatment to crosslink A method for manufacturing a reflective liquid crystal display device, comprising at least a step of reacting and a step of forming a reflective electrode on the substrate.
機系感光性樹脂を塗布し、フォトマスクを用いて画素部
表示領域の前記凹構造群及びコンタクトホールに相当す
る場所に孔を形成する工程において、前記基板上に塗布
され得る層間絶縁膜の膜厚をＭとすると、２μｍ≦Ｍ≦
４μｍであることを特徴とする請求項５記載の反射型液
晶表示装置の製造方法。6. First, an organic photosensitive resin is applied as an interlayer insulating film on the substrate, and a hole is formed at a location corresponding to the concave structure group and the contact hole in the pixel portion display area using a photomask. In the step of performing, the thickness of the interlayer insulating film that can be coated on the substrate is M, and 2 μm ≦ M ≦
6. The method according to claim 5, wherein the thickness is 4 [mu] m.
有機系感光性樹脂を塗布し、フォトマスクを用いて前記
画素部表示領域のコンタクトホールに相当する場所に孔
を形成し、ドライバー実装部分を含む非画素部表示領域
の前記層間絶縁膜を除去する工程において、前記層間絶
縁膜上に塗布され得る有機系感光性樹脂の膜厚をＰとす
ると、０．５μｍ≦Ｐ≦１．５μｍであることを特徴と
する請求項５記載の反射型液晶表示装置の製造方法。7. Second, an organic photosensitive resin is applied as a resin film on the interlayer insulating film, and a hole is formed at a location corresponding to a contact hole in the pixel area display area using a photomask. In the step of removing the interlayer insulating film in the non-pixel portion display region including the mounting portion, assuming that the thickness of the organic photosensitive resin that can be applied on the interlayer insulating film is P, 0.5 μm ≦ P ≦ 1. 6. The method according to claim 5, wherein the thickness is 5 [mu] m.
程において、フォトマスク面に設けた凹構造形成用のパ
ターンは、正多角形であり、前記正多角形に外接する円
の直径Ｒ２とすると、５μｍ≦Ｒ２≦１０μｍであるこ
とを特徴とする請求項５または６記載の反射型液晶表示
装置の製造方法。8. In the step of forming holes corresponding to the concave structure group, the concave structure forming pattern provided on the photomask surface is a regular polygon, and a diameter R2 of a circle circumscribing the regular polygon. 7. The method according to claim 5, wherein 5 .mu.m.ltoreq.R2.ltoreq.10 .mu.m.
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|---|---|---|---|
| JP13872399A JP3219391B2 (en) | 1999-05-19 | 1999-05-19 | Reflection type liquid crystal display device and manufacturing method thereof |
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|---|---|---|---|
| JP13872399A JP3219391B2 (en) | 1999-05-19 | 1999-05-19 | Reflection type liquid crystal display device and manufacturing method thereof |
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| JP2000330104A true JP2000330104A (en) | 2000-11-30 |
| JP3219391B2 JP3219391B2 (en) | 2001-10-15 |
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Cited By (8)
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| WO2002063388A1 (en) * | 2001-02-05 | 2002-08-15 | Sony Corporation | Display and its manufacturing method |
| JP2002258272A (en) * | 2001-02-28 | 2002-09-11 | Nec Corp | Reflection plate and reflective liquid crystal display device |
| JP2003043522A (en) * | 2001-08-02 | 2003-02-13 | Sony Corp | Reflection type liquid crystal display device |
| KR100455557B1 (en) * | 2001-02-14 | 2004-11-06 | 닛본 덴끼 가부시끼가이샤 | Active matrix type liquid crystal display and method for producing the same |
| US6914651B1 (en) | 2002-08-01 | 2005-07-05 | Nec Lcd Technologies, Ltd. | Liquid-crystal display device including a reflector with irregularity pattern and method of fabricating same |
| KR100757789B1 (en) * | 2001-08-06 | 2007-09-11 | 삼성전자주식회사 | Reflective type liquid crystal device |
| KR100789146B1 (en) * | 2002-01-22 | 2007-12-28 | 삼성전자주식회사 | Penetrate-reflection type liquid crystal display panel and method for fabricating thereof |
| CN100385296C (en) * | 2001-09-21 | 2008-04-30 | 株式会社日立制作所 | Liquid crystal display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002063388A1 (en) * | 2001-02-05 | 2002-08-15 | Sony Corporation | Display and its manufacturing method |
| US7002647B2 (en) | 2001-02-05 | 2006-02-21 | Sony Corporation | Display device and method of manufacturing the same |
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| JP2002258272A (en) * | 2001-02-28 | 2002-09-11 | Nec Corp | Reflection plate and reflective liquid crystal display device |
| JP2003043522A (en) * | 2001-08-02 | 2003-02-13 | Sony Corp | Reflection type liquid crystal display device |
| KR100757789B1 (en) * | 2001-08-06 | 2007-09-11 | 삼성전자주식회사 | Reflective type liquid crystal device |
| CN100385296C (en) * | 2001-09-21 | 2008-04-30 | 株式会社日立制作所 | Liquid crystal display device |
| KR100789146B1 (en) * | 2002-01-22 | 2007-12-28 | 삼성전자주식회사 | Penetrate-reflection type liquid crystal display panel and method for fabricating thereof |
| US6914651B1 (en) | 2002-08-01 | 2005-07-05 | Nec Lcd Technologies, Ltd. | Liquid-crystal display device including a reflector with irregularity pattern and method of fabricating same |
| US6980271B2 (en) | 2002-08-01 | 2005-12-27 | Nec Lcd Technologies, Ltd. | Semi-transmissive LCD device having a reflector with irregularity pattern and method of fabricating same |
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