JP2000315826A - 発光装置及びその形成方法、砲弾型発光ダイオード、チップタイプｌｅｄ - Google Patents

発光装置及びその形成方法、砲弾型発光ダイオード、チップタイプｌｅｄ

Info

Publication number
JP2000315826A
JP2000315826A JP2000110454A JP2000110454A JP2000315826A JP 2000315826 A JP2000315826 A JP 2000315826A JP 2000110454 A JP2000110454 A JP 2000110454A JP 2000110454 A JP2000110454 A JP 2000110454A JP 2000315826 A JP2000315826 A JP 2000315826A
Authority
JP
Japan
Prior art keywords
light
emitting element
light emitting
fluorescent substance
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000110454A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000315826A5 (https=
Inventor
Kunihiro Nagamine
邦浩 永峰
Kunihiro Izuno
訓宏 泉野
Yuichi Fujiwara
勇一 藤原
Isato Takeuchi
勇人 竹内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP2000110454A priority Critical patent/JP2000315826A/ja
Publication of JP2000315826A publication Critical patent/JP2000315826A/ja
Publication of JP2000315826A5 publication Critical patent/JP2000315826A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP2000110454A 2000-01-01 2000-04-12 発光装置及びその形成方法、砲弾型発光ダイオード、チップタイプｌｅｄ Withdrawn JP2000315826A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000110454A JP2000315826A (ja) 2000-01-01 2000-04-12 発光装置及びその形成方法、砲弾型発光ダイオード、チップタイプｌｅｄ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000110454A JP2000315826A (ja) 2000-01-01 2000-04-12 発光装置及びその形成方法、砲弾型発光ダイオード、チップタイプｌｅｄ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP8350253A Division JP3065263B2 (ja) 1996-12-27 1996-12-27 発光装置及びそれを用いたｌｅｄ表示器

Publications (2)

Publication Number Publication Date
JP2000315826A true JP2000315826A (ja) 2000-11-14
JP2000315826A5 JP2000315826A5 (https=) 2005-01-06

Family

ID=18622959

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000110454A Withdrawn JP2000315826A (ja) 2000-01-01 2000-04-12 発光装置及びその形成方法、砲弾型発光ダイオード、チップタイプｌｅｄ

Country Status (1)

Country Link
JP (1) JP2000315826A (https=)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3337000B2 (ja) 1999-06-07 2002-10-21 サンケン電気株式会社 半導体発光装置
WO2003010832A1 (en) * 2001-07-26 2003-02-06 Matsushita Electric Works, Ltd. Light emitting device using led
JP3428597B2 (ja) 2001-01-24 2003-07-22 日亜化学工業株式会社 光半導体素子およびその製造方法
US6670751B2 (en) 2001-05-24 2003-12-30 Samsung Electro-Mechanics Co., Ltd. Light emitting diode, light emitting device using the same, and fabrication processes therefor
JP2006128322A (ja) * 2004-10-27 2006-05-18 Kyocera Corp 発光装置および照明装置
JP2007116107A (ja) * 2005-09-22 2007-05-10 Toshiba Lighting & Technology Corp 発光装置
JP2012069591A (ja) * 2010-09-21 2012-04-05 Toshiba Corp 半導体発光装置および半導体発光装置の製造方法
US8198800B2 (en) * 2008-03-07 2012-06-12 Harvatek Corporation LED chip package structure in order to prevent the light-emitting efficiency of fluorescent powder from decreasing due to high temperature and method for making the same
US8288787B2 (en) 2002-06-26 2012-10-16 Lg Electronics, Inc. Thin film light emitting diode
US8617909B2 (en) 2004-07-02 2013-12-31 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
US8901585B2 (en) 2003-05-01 2014-12-02 Cree, Inc. Multiple component solid state white light
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US9666772B2 (en) 2003-04-30 2017-05-30 Cree, Inc. High powered light emitter packages with compact optics
US10615324B2 (en) 2013-06-14 2020-04-07 Cree Huizhou Solid State Lighting Company Limited Tiny 6 pin side view surface mount LED

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090009772A (ko) 2005-12-22 2009-01-23 크리 엘이디 라이팅 솔루션즈, 인크. 조명 장치

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3337000B2 (ja) 1999-06-07 2002-10-21 サンケン電気株式会社 半導体発光装置
JP3428597B2 (ja) 2001-01-24 2003-07-22 日亜化学工業株式会社 光半導体素子およびその製造方法
US6670751B2 (en) 2001-05-24 2003-12-30 Samsung Electro-Mechanics Co., Ltd. Light emitting diode, light emitting device using the same, and fabrication processes therefor
US7025651B2 (en) 2001-05-24 2006-04-11 Samsung Electro-Mechanics Co., Ltd. Light emitting diode, light emitting device using the same, and fabrication processes therefor
WO2003010832A1 (en) * 2001-07-26 2003-02-06 Matsushita Electric Works, Ltd. Light emitting device using led
US7084435B2 (en) 2001-07-26 2006-08-01 Matsushita Electric Works, Ltd. Light emitting device using LED
US10825962B2 (en) 2002-06-26 2020-11-03 Lg Innotek Co., Ltd. Thin film light emitting diode
US10326059B2 (en) 2002-06-26 2019-06-18 Lg Innotek Co., Ltd. Thin film light emitting diode
US9716213B2 (en) 2002-06-26 2017-07-25 Lg Innotek Co., Ltd. Thin film light emitting diode
US8288787B2 (en) 2002-06-26 2012-10-16 Lg Electronics, Inc. Thin film light emitting diode
US9666772B2 (en) 2003-04-30 2017-05-30 Cree, Inc. High powered light emitter packages with compact optics
US8901585B2 (en) 2003-05-01 2014-12-02 Cree, Inc. Multiple component solid state white light
US8617909B2 (en) 2004-07-02 2013-12-31 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
JP2006128322A (ja) * 2004-10-27 2006-05-18 Kyocera Corp 発光装置および照明装置
JP2007116107A (ja) * 2005-09-22 2007-05-10 Toshiba Lighting & Technology Corp 発光装置
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US8198800B2 (en) * 2008-03-07 2012-06-12 Harvatek Corporation LED chip package structure in order to prevent the light-emitting efficiency of fluorescent powder from decreasing due to high temperature and method for making the same
JP2012069591A (ja) * 2010-09-21 2012-04-05 Toshiba Corp 半導体発光装置および半導体発光装置の製造方法
US10615324B2 (en) 2013-06-14 2020-04-07 Cree Huizhou Solid State Lighting Company Limited Tiny 6 pin side view surface mount LED

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