JP2000306960A - Frame for semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent warping or deforming of a frame in the assembly process of an IC, by equipping it with a circuit part consisting of a wiring pattern for electrically connecting an IC chip mounted on itself, and a metallic pattern arranged at each side of the peripheral section of the frame for a semiconductor device. SOLUTION: A circuit part consisting of a wiring pattern 3 to be electrically connected with an IC chip is arranged on base material 2 consisting of resin such as glass epoxy, polyimide, or the like constituting the resinous frame 1 for a semiconductor device. The circuit part of this wiring pattern 3 consists of metal such as Cu, Ni, Au, or the like, or its alloy, and the thickness is 20-50 μm. Moreover, a metallic pattern 4 consisting of the same material as the wiring pattern 3 is arranged at the margin of one side of the base material 2 constituting the resinous frame 1. Hereby, the metallic pattern 4 can raise the entire heat conductivity of the resinous frame 1, and it can prevent the transformation of the resinous frame 1 caused by partial heating.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention
(Ball Grid Array) and CSP (Chip Scale Package)
The present invention relates to a semiconductor device frame used for an area array type semiconductor package.

[0002]

2. Description of the Related Art In recent years, a resin-based frame has been used as a substrate of a semiconductor package in order to reduce the size and thickness of a semiconductor device. Total height of semiconductor package is 2
mm or less, resin-based frames used for BGA and CSP are different from metal-based frames such as Cu and 42Alloy which have been conventionally used for IC assembly. When heat is applied locally, a phenomenon occurs in which the entire frame is warped due to thermal stress.

FIG. 9 is a plan view showing a conventional resin-based frame for a semiconductor device. In the figure, reference numeral 1 denotes a resin frame, 2 denotes a substrate 2 made of a resin such as glass epoxy or polyimide, which constitutes the resin frame 1, and 3 is electrically connected to an IC chip disposed on the substrate 2. And is made of a metal such as Cu, Ni or Au or an alloy thereof. The resin frame 1 is provided with a plurality of circuit portions including a wiring pattern 2 and the like on which an IC chip is mounted and electrically connected. The base material 2 constituting the resin frame 1 is made of a thin plate having a thickness of 0.05 to 0.3 mm using glass epoxy, polyimide, or the like having a low modulus of elasticity. Produces a deflection of 10-20 mm, as shown in FIG.
The resin frame 1 is deformed. For this reason, when a semiconductor package using the resin frame 1 is assembled using a conventional apparatus compatible with a metal frame, a large warpage occurs in the resin frame 1 due to the heat history during the assembly process.
During transportation, the frame is caught on the transportation rail and deformed,
There have been problems such as wire deformation during the process and peeling of the inner bumps.

As a method of preventing the warpage of the resin frame during the IC assembling process, a new apparatus dedicated to the resin frame is newly purchased or the conventional apparatus is modified, or the thickness of the frame is increased to improve the rigidity of the frame. For example, a method has been proposed in which a guide frame for reinforcement is mounted around the frame.

[0005]

Conventionally, as a method of preventing warpage of a resin frame during an IC assembly process,
Purchase a new device specifically for resin-based frames, modify the existing device, or increase the thickness of the base material that makes up the frame to improve the rigidity of the frame, or install a guide frame around the frame for reinforcement. Although a mounting method has been proposed, remodeling of the conventional device or purchase of a new device requires a new capital investment and raises the manufacturing cost. In addition, the method of increasing the thickness of the base material constituting the frame has a problem in that the miniaturization and thinning of the package are hindered, and the vertical structure of the package needs to be reviewed. In addition, the method of mounting the guide frame around the frame has a problem that the number of steps is increased due to attachment / detachment of the guide frame and the like, resulting in a decrease in productivity and an increase in manufacturing cost.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and prevents warpage or deformation of a frame during an IC assembly process even when a resin frame is used as a semiconductor device frame. It is an object of the present invention to obtain a semiconductor device frame that can be used.

[0007]

According to the present invention, there is provided a semiconductor device frame using a resin as a base material according to the present invention, comprising a circuit portion having a wiring pattern on which an IC chip is mounted and electrically connected, and a peripheral portion of the semiconductor device frame. And a metal pattern provided on each side of the section. The metal pattern is provided on one side or both sides of the semiconductor device frame. Further, the metal pattern is provided with a slit in at least one place. Also,
The wiring pattern and the metal pattern are electrically connected by a connection portion. The wiring pattern and the metal pattern are made of the same metal.

[0008]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 Hereinafter, a semiconductor device frame according to an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a plan view showing a frame for a semiconductor device according to a first embodiment of the present invention, and FIG. 2 is a sectional view taken along line AA of FIG. In the figure, reference numeral 1 denotes a resin frame for a semiconductor device, 2 denotes a substrate made of a resin such as glass epoxy or polyimide which constitutes the resin frame 1, and 3 denotes an IC chip disposed on the substrate 2 and an electric chip. This is a wiring pattern that is electrically connected and is made of a metal such as Cu, Ni or Au or an alloy thereof and has a thickness of 20 to 50 μm. The resin frame 1 is provided with a plurality of circuit portions including a wiring pattern 2 and the like on which an IC chip is mounted and electrically connected. Reference numeral 4 denotes a metal pattern having a thickness of 20 to 30 μm, which is provided on the periphery of one surface of the resin frame 1 using the same material as the wiring pattern 3.
Improve the strength of.

In the frame for a semiconductor device according to the present embodiment, the metal pattern 4 made of the same material as the wiring pattern 3 is formed on the periphery of one side of the base material 2 constituting the resin frame 1.
By disposing the resin frame 1, the elastic modulus of the resin frame 1 can be improved, and the bending when the resin frame 1 is cantilevered can be reduced to about 2 to 5 mm. This value is about the same as that of a conventional metal frame using Cu, 42Alloy, or the like. Further, by forming the metal pattern 4, the thermal conductivity of the entire resin-based frame 1 is improved,
Deformation of the resin frame 1 due to local heating can be prevented.

According to the present embodiment, the resin frame 1
By using the resin-based frame 1 in which the metal pattern 4 is disposed on the peripheral edge of one side of the base material 2 constituting, the elastic modulus of the resin-based frame 1 can be improved and the heat of the entire resin-based frame 1 can be improved. The conductivity is improved so that deformation of the resin frame 1 due to local heating can be prevented, and the warpage and deformation of the frame during the IC assembly process can be reduced. An apparatus compatible with a metal frame can be applied.

Embodiment 2 In the first embodiment, the metal pattern 4 is disposed on the peripheral edge of one side of the base material 2 constituting the resin-based frame 1, but as shown in FIG. The same effect can be obtained by disposing. The sizes of the metal patterns 4 provided on both surfaces of the base material 2 may be the same or different.

Embodiment 3 FIG. 4 is a plan view of a semiconductor device frame according to a third embodiment of the present invention, and FIG.
It is sectional drawing along the BB line of FIG. In the figure, reference numeral 5 denotes a slit provided in the metal pattern 4. The other configuration is the same as that of the first embodiment, and the description is omitted.

In order to increase the number of packages in one frame for the purpose of improving the productivity of the semiconductor package, the length of the frame is increased to more than 15 cm and the matrix is formed. As a result, during the assembly process, Heat is often applied locally to the frame. For example, when a temperature exceeding the glass transition temperature of the base material 2 constituting the frame is applied to the resin-based frame 1, the resin-based frame in which the metal pattern 4 is disposed on the periphery of the base material 2 described in the first embodiment. Even when the resin frame 1 is used, since the resin-based frame 1 and the metal pattern 4 have different linear expansion coefficients, stress concentration occurs and warpage occurs, and the warped portion remains even after the frame is cooled. When this phenomenon occurs at a plurality of locations in one frame, the resin-based frame 1 is warped and deformed into a complicated shape as shown in FIG. In order to solve this problem, it is necessary to disperse the thermal stress generated in the resin frame 1. In the present embodiment, as shown in FIGS. 4 and 5, for the purpose of relaxing thermal stress generated in the resin frame 1 due to local heating, as shown in FIGS.
Slits 5 are provided at predetermined intervals in a metal pattern 4 disposed on a peripheral edge of one surface of a base material 2 constituting the resin frame 1.

According to the present embodiment, the resin frame 1
When the slits are provided directly on the metal frame 1, the elastic modulus of the resin frame 1 itself is reduced. However, the slits 5 are formed at predetermined intervals in the metal pattern 4 disposed on the peripheral portion of the base material 2 constituting the resin frame 1. By providing the resin-based frame 1
The elastic modulus of itself does not decrease and the concentration of stress caused by the difference in linear expansion coefficient between the metal pattern 4 and the resin frame 1 when locally heated is reduced, thereby preventing the deformation of the resin frame 1. In addition, a conventional apparatus compatible with a metal-based frame can be applied to a resin-based frame 1 in which the number of packages in one frame is increased and the length of one frame is long.

Embodiment 4 In the third embodiment, the metal pattern 4 having the slit 5 is provided on the peripheral edge of one side of the base material 2 constituting the resin frame 1, but as shown in FIGS. A similar effect can be obtained by forming a slit 5 in the metal pattern 4 disposed on the peripheral portion. The positions of the slits 5 provided in the metal patterns 4 provided on both surfaces of the base material 2 are the same as those shown in FIG.
The slits 5 may be provided at different positions and pitches as shown in FIG.

Embodiment 5 8 is a plan view of a semiconductor device frame according to a fifth embodiment of the present invention. In the figure, reference numeral 6 denotes a connection portion for electrically shorting the wiring pattern 3 and the metal pattern 4. The other configuration is the same as that of the first embodiment, and the description is omitted. In the present embodiment, the wiring pattern 3 (for example, a ground portion) and the metal pattern 4 are short-circuited by the connection portion 6. At this time, the metal pattern 4 is designed to be in contact with a magazine or a transport rail used in the IC assembly process. Also, this connection portion 6 is cut off during the package singulation process.

According to the present embodiment, the resin frame 1
The wiring pattern 3 and the metal pattern 4 that are electrically connected to the upper IC chip are short-circuited via the connection portion 6 to prevent the IC chip from being adversely affected by static electricity generated in the resin frame 1 made of an insulator. can do.

[0018]

As described above, according to the present invention, even when a resin-based frame is used as a frame for a semiconductor device, a metal pattern is provided on the periphery of a base material constituting the resin-based frame. Thereby, the elastic modulus of the resin frame can be improved, the thermal conductivity of the entire resin frame is improved by the metal pattern, and the deformation of the resin frame due to local heating can be prevented. By reducing the warpage and deformation of the frame, it is possible to apply equipment compatible with conventional metal frames in the IC assembly process that employs resin frames, eliminating the need for capital investment such as remodeling of existing equipment or purchasing new equipment. .

Further, by providing slits in the metal pattern disposed on the peripheral portion of the base material constituting the resin frame, the number of packages per frame is large and the length of one frame is long. In addition, the elastic modulus of the resin frame can be improved, and the concentration of the stress caused by the difference in the linear expansion coefficient between the metal pattern and the resin frame when locally heated can be reduced to deform the resin frame. In the IC assembling process employing a resin frame, a conventional apparatus compatible with a metal frame can be applied. Further, by short-circuiting the wiring pattern and the metal pattern that are electrically connected to the IC chip on the resin frame, it is possible to prevent electrostatic breakdown of the IC chip due to static electricity generated in the resin frame during the IC assembly process. Can be.

[Brief description of the drawings]

FIG. 1 is a plan view showing a semiconductor device frame according to a first embodiment of the present invention;

FIG. 2 is a sectional view showing a semiconductor device frame according to the first embodiment of the present invention;

FIG. 3 is a sectional view showing a semiconductor device frame according to a second embodiment of the present invention;

FIG. 4 is a plan view showing a semiconductor device frame according to a third embodiment of the present invention;

FIG. 5 is a sectional view showing a semiconductor device frame according to a third embodiment of the present invention;

FIG. 6 is a sectional view showing a semiconductor device frame according to a fourth embodiment of the present invention;

FIG. 7 is a sectional view showing another semiconductor device frame according to a fourth embodiment of the present invention;

FIG. 8 is a sectional view showing a frame for a semiconductor device according to a fifth embodiment of the present invention;

FIG. 9 is a plan view showing a conventional semiconductor device frame of this type.

FIG. 10 is a view for explaining a problem of a conventional semiconductor device frame.

FIG. 11 is a view for explaining a problem of the semiconductor device frame;

[Explanation of symbols]

1 Resin frame, 2 base material, 3 wiring pattern, 4
Metal pattern, 5 slits, 6 connections.

Claims (5)

[Claims] 1. A semiconductor device frame comprising a resin as a base material, wherein a circuit portion comprising a wiring pattern on which an IC chip is mounted and electrically connected to the semiconductor device frame is provided on each side of a peripheral portion of the semiconductor device frame. A frame for a semiconductor device, comprising: a metal pattern formed thereon. 2. The semiconductor device frame according to claim 1, wherein the metal pattern is provided on one or both surfaces of the semiconductor device frame. 3. The semiconductor device frame according to claim 1, wherein the metal pattern is provided with a slit at at least one position. 4. The semiconductor device frame according to claim 1, wherein the wiring pattern and the metal pattern are electrically connected by a connection portion. 5. The semiconductor device frame according to claim 1, wherein the wiring pattern and the metal pattern are made of the same metal.