JP2000306930A - Potting method and apparatus and manufacture of semiconductor device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve reliability in potting a resin. SOLUTION: This apparatus comprises a nozzle 7 for jetting a resin 8 to be potted, a first clamp section 5 for supporting an upper surface 4f of a tape substrate 4 opposed to a distal end surface 7a of the nozzle 7, and having an opening part 4e formed therein so as to correspond to an electrode pad of a semiconductor chip 1 mounted on the substrate 4, a heat block 17 for heating the resin 8, a second clamp section 16 for supporting the substrate 4 by clamping the substrate 4 together with the section 15 on the block 17 during potting, and a nozzle control section for controlling the position of the surface 7a of the nozzle 7 with respect to the surface 4f of the substrate 4. With the surface 4f of the substrate 4 as a reference, the nozzle control section controls the distance between the nozzle 7 and the surface 4f of the substrate 4 to perform potting, whereby variations in the application of the resin 8 is reduced and positional deviations in its application is prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin potting technique, and more particularly to a technique which is effective when applied to improve reliability in potting sealing of a semiconductor manufacturing technique.

[0002]

2. Description of the Related Art The technology described below studies the present invention,
Upon completion, they were examined by the inventor, and the outline is as follows.

[0003] As an example of a semiconductor device designed to be thin and small, a CSP (Chip Scale Package or Chip Size) is used.
A semiconductor device having a chip size called "Package" or a slightly larger semiconductor device than a semiconductor chip is known. As an example of the structure of the CSP, a semiconductor chip is attached to a tape substrate (for example, polyimide) through an elastomer (elastic structure). Supported by the tape substrate of the present invention.

The sealing in the CSP having such a structure is as follows.
Potting resin for sealing onto the main surface of the semiconductor chip through the opening of the tape substrate, and the surface electrode (also called a bonding pad) of the semiconductor chip and the lead portion of the tape substrate electrically connected thereto And is done over.

[0005] In such potting sealing, the surface of the tape substrate opposite to the nozzle side (hereinafter referred to as the lower surface) or the back surface of the semiconductor chip (the surface opposite to the main surface) is used as a reference for potting. Potting is performed by controlling the position (height) of the tip surface of the nozzle from this reference.

Here, regarding the structure of various CSPs,
For example, Nikkei BP, published on April 1, 1997, “Nikkei Micro Devices April 1, 1997 Issue No. 14
2 ", pp. 44-53, and a potting method for a CSP using a semiconductor chip having a center pad arrangement is described in, for example, JP-A-9-26053.
No. 5 has the description.

[0007]

However, in the potting of the above technique, the tape substrate warps,
In addition, since it easily bends and deforms, the variation in the distance from the lower surface of the tape substrate or the back surface of the semiconductor chip to the tip surface of the nozzle arranged on the opposite side increases, and as a result, the amount of resin applied becomes The problem is that the variation increases.

Further, if the thickness and flatness of the holding jig holding the tape substrate vary widely, the position of the lower surface of the tape substrate and the lower surface of the semiconductor chip, which is a reference for potting, becomes large. As described above, there is a problem that the variation in the amount of applied resin becomes large.

Further, since an adhesive or the like is used for fixing the semiconductor chip to the tape substrate, the thickness variation between the tape substrate, the elastomer and the semiconductor chip is large, which is a standard for potting. The variation in the distance between the position of the lower surface of the tape substrate or the back surface of the semiconductor chip and the tip surface of the nozzle on the opposite side increases, and as a result, the variation in the application amount of the resin increases.

If the distance between the lower surface of the tape substrate or the back surface of the semiconductor chip and the tip surface of the nozzle becomes longer than the allowable range, the nozzle descending distance also becomes longer. This causes a problem that the resin pool formed on the tip surface of the nozzle at the time of potting wraps around the side surface of the nozzle, and as a result, a shift in the application position occurs.

An object of the present invention is to provide a potting method and apparatus for improving the reliability of potting of a resin and a method of manufacturing a semiconductor device using the same.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0013]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, the potting method of the present invention comprises:
A step of disposing the nozzle and the wiring substrate with the tip surface of the nozzle capable of discharging the potting resin and the surface on the application side of the wiring substrate facing each other, and forming a right angle with the surface on the application side of the wiring substrate. Matching the position of the coating side surface of the wiring substrate in the forming direction with the position of the tip end surface of the nozzle, and the coating substrate surface of the nozzle based on the coating side surface of the wiring substrate. Controlling the distance from the surface on the application side to discharge the resin from the nozzle and dropping the resin on the portion to be coated of the wiring board.

Thus, it is possible to control the distance between the nozzle and the coating side surface of the wiring substrate on the nozzle side irrespective of the deformation of the wiring substrate or the thickness variation or deformation of the holding jig supporting the wiring substrate. Therefore, the distance between the wiring board and the tip surface of the nozzle can be controlled without being affected by the deformation of the wiring board or the variation or deformation of the thickness of the holding jig supporting the wiring board.

As a result, the distance between the wiring board and the tip end surface of the nozzle can be controlled with high precision, thereby reducing the variation in the amount of resin applied.

Further, the potting apparatus of the present invention includes a nozzle for discharging a resin for potting, and a coating-side surface of a wiring substrate, which is disposed on the nozzle side and faces a tip end surface of the nozzle when the resin is potted. A substrate main support for supporting, a substrate auxiliary support for assisting the support of the wiring substrate by the substrate main support, a heating unit for heating the resin, and a nozzle for the coating side surface of the wiring substrate on the application side. A nozzle control unit that controls the position of the tip end surface, and with reference to the application-side surface of the wiring board, the nozzle control unit determines the distance of the nozzle from the wiring-side surface of the wiring substrate by the nozzle control unit. The potting of the resin is performed by controlling.

Further, in the method of manufacturing a semiconductor device according to the present invention, the step of mounting the semiconductor chip on the wiring board and the step of electrically connecting the surface electrode of the semiconductor chip and the corresponding lead portion of the wiring board are performed. And the wiring substrate, wherein the coating-side surface, which is the surface opposite to the chip mounting surface of the wiring substrate on which the semiconductor chip is mounted, and the tip end surface of a nozzle capable of discharging potting resin face each other. Disposing a nozzle, and matching a position of the coating-side surface of the wiring substrate with a position of the tip surface of the nozzle in a direction perpendicular to the coating-side surface of the wiring substrate; The resin is discharged from the nozzle by controlling the distance of the nozzle from the coating-side surface of the wiring board with reference to the coating-side surface of the wiring board, and the resin is discharged from the nozzle. Forming a sealing portion by dropping the resin on the serial surface electrode, and a step of said lead portion and electrically connected to provide an external terminal on the wiring board.

[0019]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIGS. 1A and 1B are views showing an example of the structure of a potting apparatus according to an embodiment of the present invention, wherein FIG. 1A is a partially cutaway front view, and FIG. FIG. 2 is an enlarged side view showing a part of the structure of the potting unit of the potting device shown in FIG. 1, and FIG. 3 is a partially enlarged plan view showing the structure of the potting unit shown in FIG. 5 is a perspective view showing a structure of a semiconductor device (CSP) assembled by the method for manufacturing a semiconductor device according to the embodiment of the present invention, FIG. 5 is a diagram showing a structure of the semiconductor device shown in FIG. 4, and FIG. FIG. 4B is a bottom view, FIG. 4C is a cross-sectional view showing the AA cross section of FIG. 4B, and FIG.
FIG. 6 is a cross-sectional view showing a cross section taken along a line B, and FIG. 6 is a manufacturing process flow showing an example of an assembling procedure in the method for manufacturing a semiconductor device according to the embodiment of the present invention.

The potting apparatus of the present embodiment shown in FIG. 1 is, for example, in a potting step (resin sealing step) of a semiconductor manufacturing process, a potting resin 8 (see FIG. 2) for a member to be potted in a semiconductor device. ) Is dropped and used for resin sealing.

In the present embodiment, a small chip size CSP 11 shown in FIGS. 4 and 5 will be taken as an example of the semiconductor device which is subjected to resin sealing by potting using the potting device. explain.

Therefore, the potting target member on which potting is performed by the potting apparatus of the present embodiment mounts the semiconductor chip 1, and has an electrode pad (surface electrode) 1b of the semiconductor chip 1 and a corresponding tape substrate ( The lead portion 4c of the wiring substrate 4 is a tape substrate 4 having a structure electrically connected thereto. The resin 8 is applied to the electrode pads 1b of the semiconductor chip 1 on the tape substrate 4 and the lead portions 4c.

The basic configuration of the potting apparatus shown in FIG. 1 will be described with reference to FIGS.
, A potting unit 10 for performing a potting process, an unloader 12 for sequentially storing the tape substrate 4 after the potting process, and a guide rail 1 for guiding the transport of the tape substrate 4.
3, loader 9, potting unit 10, unloader 12
Body 1 on which guide rails 13 and the like are installed
In the potting section 10, potting is performed on the electrode pads 1b of the semiconductor chip 1 mounted on the tape substrate 4 and on the lead sections 4c electrically connected thereto.

Further, as shown in FIG. 2, a nozzle 7 for discharging a potting resin 8 and a nozzle 7 which is arranged on the nozzle 7 side of the tape substrate 4 and which is The surface on the coating side of the tape substrate 4 facing the front end surface 7a (the nozzle 7
Side, that is, a surface facing upward, and this surface is hereinafter referred to as an upper surface 4f.
A first clamp portion 15 (substrate main support portion) having an opening 4e corresponding to the electrode pad 1b (surface electrode) of the semiconductor chip 1 mounted on the tape substrate 4; A heat block 17 (heating means) provided on the side opposite to the nozzle 7 side of the substrate 4 and for heating the resin 8; and a tape substrate by clamping the tape substrate 4 together with the first clamp portion 15 on the heat block 17 during potting. And a position of the tip surface 7a of the nozzle 7 with respect to the upper surface 4f of the tape substrate 4 (the tip surface of the nozzle 7 in a direction perpendicular to the upper surface 4f of the tape substrate 4). 7a), a nozzle control unit 18 for controlling the position of the upper surface 4 of the tape substrate 4 when performing potting. The distance between the nozzle 7 and the upper surface 4f of the tape substrate 4 is automatically controlled by the nozzle control unit 18 on the basis of the above, and the resin 8 is supplied from the nozzle 7 through the opening 4e of the tape substrate 4 to the electrode pad 1b To be dropped.

That is, the potting device comprises:
The height of the clamp portion 15 and the height of the second clamp portion 16 can be independently and automatically adjusted, whereby the distance of the nozzle 7 from the upper surface 4f of the tape substrate 4 can be automatically and precisely controlled. Can be.

The CSP 11 described in the present embodiment
The upper surface 4f of the tape substrate 4 is a surface opposite to the chip mounting surface 4g on which the semiconductor chip 1 is mounted, and this surface is also a surface on which the bump electrodes 2 as external terminals of the CSP 11 are mounted.

Here, the first clamp portion 15 is also called a wind clamper, and is a member for holding the upper surface 4f, which is the surface on the application side of the tape substrate 4, by pressing the upper surface 4f from the upper side thereof.
As shown in FIG. 3, an opening window 15 is provided inside the support portion.
When the potting is performed, the opening 4e of the tape substrate 4, the electrode pad 1b of the semiconductor chip 1, and the lead 4 electrically connected thereto are formed in the opening window 15a.
c are arranged.

Further, as shown in FIG. 1B, the nozzle 7 is supported by a Z-direction operating unit 20 which is vertically movably mounted. The nozzle 7 is attached to a Y-direction operation unit 21 which can move the nozzle 7 along the portion 4e (moves the nozzle 7 in a horizontal direction perpendicular to the X direction which is the tape feeding direction shown in FIG. 3, that is, in the Y direction). The Y-direction operating unit 21 is attached to the X-direction operating unit 22. However, the relationship between the mounting order in the X, Y, and Z directions is not limited to the above order.

Therefore, the raising / lowering (up / down) operation of the nozzle 7 is performed by the nozzle control unit 18 via the Z-direction operation unit 20, and the movement of the nozzle 7 in the X direction in the same direction as the tape feeding direction is controlled by the nozzle control unit. The movement of the nozzle 7 in the Y direction is performed by the nozzle control unit 18 through the Y direction operation unit 21 by the unit 18 via the X direction operation unit 22.

The nozzle 7 is connected to a dispenser 23, and adjusts the discharge pressure and the discharge time of the potting resin 8 discharged from the nozzle 7 by the dispenser 23.

As shown in FIG. 2, the second clamp portion 16 is a member that supports the lower surface, which is the chip mounting surface 4g of the tape substrate 4, by pressing it from below.

Further, the heat block 17 is disposed slightly below (for example, about 0.1 mm) from the semiconductor chip 1 below the semiconductor chip 1 in the potting section 10, and is dropped on the semiconductor chip 1 during potting. The resin 8 is heated to improve its fluidity, and the semiconductor chip 1 is heated from the back surface 1 c side of the semiconductor chip 1.
Heat through.

Therefore, the tape substrate 4 is clamped and supported on the heat block 17 by the first clamp portion 15 and the second clamp portion 16 at the time of potting.

In the potting apparatus, when the tape substrate 4 on which chips are mounted is transported in the X direction, a carrier jig 19 as a holding jig fixed to the tape substrate 4 by adhesion is moved on the guide rail 13. This is done by:

As shown in FIG. 2, the carrier jig 19 is formed by bonding a substrate projecting portion 4b projecting outward from a substrate body 4a (a region where the semiconductor chip 1 is mounted) on the tape substrate 4 by bonding or the like. It is fixed and held.

In the potting apparatus according to the present embodiment, the positions in the thickness direction of the respective tape substrates 4 in the first clamp portion 15 and the second clamp portion 16 are provided so as to be adjustable independently of each other. ing.

That is, in the potting apparatus, the first
The clamp part 15 and the second clamp part 16 are provided independently and independently so as to be adjustable in height.

Next, the respective operating mechanisms of the first clamp unit 15, the second clamp unit 16, and the heat block 17 in the potting unit 10 of the potting apparatus of the present embodiment shown in FIG. 2 will be described.

First, the first clamp portion 15 has a frame shape with an opening window 15a (see FIG. 3) formed inside.
It is fixed to the L-shaped clamper support 15b. Further, the clamper support 15b is engaged with the cam 15d via the cam follower 15c, and is connected to the motor 15f via the coupling 15e. The angle of the motor 15f can be arbitrarily set.

Therefore, by driving the motor 15f at a predetermined angle, the cam 15d can be rotated at a predetermined angle, whereby the first clamp portion 15 can be lifted by a predetermined amount.

That is, the height of the first clamp portion 15 can be adjusted by the cam 15d via the clamper support portion 15b according to the lift amount of the cam 15d.

The heat block 17 is fixed to the heat block support portion 17a, engages with the cam 17c via the cam follower 17b, like the first clamp portion 15, and further, the motor 17e via the coupling 17d.
It is connected to the.

Therefore, by driving the motor 17e by a predetermined angle, the cam 17c can be rotated by a predetermined angle, so that the heat block 17 is lifted by a predetermined amount as in the case of the first clamp portion 15. Can be.

That is, the height of the heat block 17 can be adjusted by the cam 17c via the heat block support 17a in accordance with the lift of the cam 17c.

Further, in the potting apparatus according to the present embodiment, as shown in FIG. 2, the second clamp 16 is supported by the heat block 17, and at this time, the second clamp 16 A spring member 25 is provided as an elastic member for causing the clamp surface 16a of the clamp portion 16 to follow the clamp surface 15g of the first clamp portion 15.

That is, since the second clamp portion 16 is attached to the heat block 17, it operates in conjunction with the heat block 17. However, the second clamp portion 16 is pushed up by the outer peripheral projecting portion 17 f of the heat block 17. The spring member 25 is provided as described above.
The clamp section 16 is constantly under pressure to push up the tape substrate 4. Therefore, when the heat block 17 reaches a predetermined height, the tape substrate 4 is always pressed from below.

As a result, in the potting apparatus according to the present embodiment, the heat block 17 does not come into contact with the back surface 1c of the semiconductor chip 1 and is 0.1 mm in the potting.
The semiconductor chip 1 can be heated in a non-contact manner by arranging the semiconductor chip 1 close to a short distance, so that the resin 8 dropped on the coated portion 24 of the tape substrate 4 is heated via the semiconductor chip 1. I do.

Further, in this state, since the tape substrate 4 can be pressed from below by the spring member 25 attached to the heat block 17 via the second clamp portion 16, the first clamp portion 15 and the second clamp portion 16 can be pressed. Thus, the tape substrate 4 can be clamped and supported on the heat block 17.

Therefore, in this state, as shown in FIG. 2, since the semiconductor chip 1 and the heat block 17 are arranged apart from each other, deformation such as warpage or variation in thickness of the tape substrate 4 occurs. Does not affect the upper surface 4f reference of the tape substrate 4.

As a result, the distance between the upper surface 4f of the tape substrate 4 and the tip surface 7a of the nozzle 7 can be controlled with high accuracy.

That is, in the potting, the deformation of the tape substrate 4 or the thickness variation and the deformation of the carrier jig 19 which is a holding jig for supporting the tape substrate 4 can be absorbed. Can be reduced.

As shown in FIG. 1A, a camera 26 used for recognizing the position of the opening 4e of the tape substrate 4, the position of the nozzle 7, and the like is provided above the potting section 10. ing.

Next, the structure of a CSP 11, which is an example of a semiconductor device assembled by potting using the potting apparatus of the present embodiment, will be described.

The CSP 1 according to the present embodiment shown in FIGS.
1 is a small chip size, for example, DR
It has an AM (Dynamic Random Access Memory) chip and the like.

Further, the semiconductor chip 1 of the CSP 11 has a main surface 1a (in the present embodiment, the main surface 1a is the surface), which forms a rectangle. In the vicinity, a plurality of electrode pads 1b (surface electrodes) are arranged in parallel with the long side.

The arrangement of the electrode pads 1b is hereinafter referred to as a center pad arrangement.

Therefore, the CSP 11 of the present embodiment
Is mounted with a semiconductor chip 1 having a center pad arrangement.

The external terminals of the CSP 11 are the bump electrodes 2, and therefore, the CSP 11 may be called a ball grid array.

The structure of the CSP 11 will be described. The electrode 3 is disposed on the main surface 1a of the semiconductor chip 1 by exposing the electrode pads 1b formed on the main surface 1a of the semiconductor chip 1; 1b, a plurality of leads 4c corresponding to the semiconductor chip 1 are formed, an opening 4e for exposing the electrode pads 1b of the semiconductor chip 1 and the leads 4c electrically connected thereto is formed, and the semiconductor 3 A tape substrate 4 supporting the chip 1, a semiconductor chip 1, an elastomer 3, and a tape substrate 4 which are open to the outside at an end;
The resin flow path 6 communicates with the two flow path openings 6a and the opening 4e of the tape substrate 4, and the resin 8 (see FIG. 2, this resin 8 is also referred to as resin) is injected into the resin flow path 6. A sealing portion 5 formed by potting sealing and sealing the electrode pads 1b of the semiconductor chip 1 and the lead portions 4c of the tape substrate 4, and the tape substrate 4 electrically connected to the lead portions 4c. A plurality of external terminals are provided as bump electrodes 2.

The CSP 11 shown in FIG. 5B is a transparent CSP 11 shown in FIG. 4 to represent the electrode pads 1b of the semiconductor chip 1 and the lead portions 4c of the tape substrate 4. It is.

Therefore, in FIG. 5B, the illustration of the sealing portion 5 is omitted, but the CSP 11 shown in FIG.
In the opening 4e of the tape substrate 4, a sealing portion 5 as shown in FIG. 4 is originally formed.

In the CSP 11 of the present embodiment, as shown in FIG. 4, external terminals are provided in two rows on both sides of one elongated opening 4e of the tape substrate 4 corresponding to the center pad arrangement of the semiconductor chip 1. A bump electrode 2 is provided.

Further, the elastomer 3 of the present embodiment is an insulating elastic member having an adhesive layer formed on both surfaces thereof,
It is arranged between the tape substrate 4 and the semiconductor chip 1.

The resin flow path 6 in the CSP 11
When the semiconductor chip 1, the elastomer 3 and the tape substrate 4 are joined, two elongated elastomers 3 are provided between the semiconductor chip 1 and the tape substrate 4 with a plurality of electrode pads 1 b disposed therebetween. This is an area surrounded by the main surface 1 a of the semiconductor chip 1, the two elastomers 3, and the tape substrate 4.

Further, the resin flow path portion 6 is
The flow path opening 6a (FIG. 5) is formed by connecting one short side to the other short side of the two short sides, and opens to the outside at both ends of the resin flow path 6. (See (c)).

Therefore, at the time of potting, FIG.
As shown in (1), the resin 8 is dropped onto the portion to be coated 24 via the opening 4e of the tape substrate 4, and is solidified to form the sealing portion 5.

The tape substrate 4 of the CSP 11 is provided with a plurality of wirings 4d (see FIG. 5B) for electrically connecting the respective lead portions 4c and the bump electrodes 2.

Here, the material of each member used for the CSP 11 will be described. However, the material, size, thickness, and the like of each member described here are merely examples, and are not necessarily limited to these conditions.

First, the tape substrate 4 has a tape serving as a base material formed of a polyimide resin, and has a thickness of about 25 to 75 μm. Further, the wiring 4d (including the lead portion 4c) provided on the tape substrate 4 is a copper foil.

The elastomer 3, which is an elastic structure,
It is made of a base layer having an adhesive layer on both front and back surfaces, and is formed of a polyimide resin or the like.

Further, the resin 8 as a sealing material for forming the sealing portion 5 is an epoxy-based liquid resin.

The material of the bump electrode 2 is Sn / Pb
Eutectic solder and other high melting point solders.

Next, the potting method of the present embodiment will be described as being included in the method of manufacturing the CSP 11 (semiconductor device). Here, the method of manufacturing the CSP 11 will be described according to the manufacturing process flow shown in FIG.

First, a desired semiconductor integrated circuit is formed.
In addition, a semiconductor chip 1 having a center pad array whose main surface 1a forms a rectangle is prepared.

Further, the electrode pads 1b of the semiconductor chip 1
Leads 4c and wires 4 electrically connectable to
d, and a tape substrate 4 (wiring substrate) such as a polyimide tape having an elongated opening 4e for disposing the plurality of leads 4c is prepared.

Further, two elastomers 3 formed by cutting the elongated tape-shaped elastomer 3 into a length substantially equal to the length in the longitudinal direction of the main surface 1a of the semiconductor chip 1 are prepared.

Thereafter, the supply of the tape substrate in step S1 and the supply of the elastomer in step S2 shown in FIG. 6 are performed, and the elastomer is attached in step S3.

Incidentally, the attachment of the elastomer 3 is performed by joining the tape substrate 4 and the elastomer 3 together.

Here, as shown in FIGS. 4 and 5, an opening 4e is opened on the surface of the tape substrate 4 opposite to the upper surface 4f (surface on the coating side) which is the bump electrode mounting surface.
Two elongated elastomers 3 are attached to both sides of the opening 4e along the opening 4e.

Thus, the tape substrate 4 can be brought into a state where the elastomer 3 is attached.

Thereafter, as shown in step S4 in FIG. 6, chip supply for supplying the semiconductor chip 1 is performed, whereby the chip is attached in step S5, that is, the semiconductor chip 1 is mounted on the tape substrate 4.

Here, as shown in FIG. 5B, the chip bonding in step S5 is performed by connecting the electrode pads 1b of the semiconductor chip 1 having the center pad arrangement to the openings 4 of the tape substrate 4.
e, and the main surface 1a of the semiconductor chip 1 and the elastomer 3 are joined as shown in FIG.

That is, the semiconductor chip 1 is attached to the elastomer 3.

As a result, on the main surface 1a of the semiconductor chip 1, the elongated elastomers 3 are arranged on both sides of the plurality of electrode pads 1b in parallel with the electrode pads 1b. Opening 4
From above e, the lead portion 4c and the electrode pad 1b of the semiconductor chip 1 can be viewed.

Further, by attaching the semiconductor chip 1 to the elastomer 3, the resin flow path portion 6 communicating with the two flow path openings 6 a which are open to the outside at the ends and the opening 4 e of the tape substrate 4 is formed. The resin flow path 6 has a structure in which one flow path opening 6a, the other flow path opening 6a, and the opening 4e of the tape substrate 4 communicate with each other.

Thereafter, in step S6 shown in FIG.
Elastomer cure baking is performed to cure the elastomer 3 to such an extent that the semiconductor chip 1 does not peel off from the elastomer 3.

The above-described elastomer cure bake may be performed together with the encapsulant cure bake shown in step S10.

Subsequently, the connection of the lead portion is performed in step S7.

That is, the electrode pad 1 of the semiconductor chip 1
b and the corresponding lead portion 4c of the tape substrate 4 are electrically connected.

In the present embodiment, connection is made by single point bonding using a bonding tool of a wire bonding apparatus as the lead connection.

That is, the bonding tool is arranged on the opening 4e of the tape substrate 4, and each electrode pad 1b of the semiconductor chip 1 and the corresponding lead 4c of the tape substrate 4 are connected through the opening 4e. Connect sequentially.

Thereafter, the supply of the resin 8 as the sealing material shown in step S8 in FIG. 6, that is, the supply of the sealing material is performed, and the resin sealing shown in step S9 is performed.

Here, by injecting the resin 8 from the opening 4e of the tape substrate 4 into the resin flow path portion 6 of the CSP 11, that is, the coated portion 24, the resin flow path portion 6 Potting sealing is performed while releasing the air therein, thereby sealing the electrode pads 1b and the lead portions 4c of the semiconductor chip 1 and forming the sealing portions 5 there.

First, the chip mount (the tape substrate 4 of the semiconductor chip 1) is mounted on the loader 9 of the potting apparatus shown in FIG.
The tape substrate 4 that has been subjected to the mounting on the tape substrate 4 and the connection of the leads (lead bonding) is set.

As shown in FIG. 3, both ends of the tape substrate 4 are supported by a carrier jig 19 as a holding jig. As shown in FIG. While being guided by the guide rail 13, the lead-bonded tape substrate 4, which is a member to be potted, is sequentially transferred from the loader 9 to the potting section 10.
Transport to

At this time, the upper surface 4f of the tape substrate 4 (the surface on the coating side and also the surface on which the bumps are mounted) is set toward the nozzle 7, that is, upward.
Is transported.

Subsequently, the semiconductor chip 1 is placed on the heat block 17 and the first clamp 15 shown in FIG.
The conveyance of the tape substrate 4 is stopped at the position where the opening 4e of the tape substrate 4 is arranged in the opening window 15a of the tape substrate 4.

Thus, on the heat block 17, the tip end surface 7 a of the nozzle 7 and the upper surface 4 f of the tape substrate 4 are arranged to face each other, and the opening of the tape substrate 4 is 4e is arranged.

Subsequently, the tape substrate 4 is
The position of the opening 4e and the position of the nozzle 7 are recognized.

Thereafter, the first clamp portion 15 is lowered and stopped to such an extent that the clamp surface 15g of the first clamp portion 15 slightly contacts the upper surface 4f of the tape substrate 4.

Here, the cam 15d is rotated by a desired angle by driving the motor 15f to a desired angle, thereby lifting the first clamp portion 15 by a predetermined amount.

That is, the height of the first clamp portion 15 is adjusted by the cam 15d via the clamper support portion 15b in accordance with the lift amount of the cam 15d, whereby the height of the first clamp portion 15 is adjusted to the height of the upper surface 4f of the tape substrate 4. 1 The height of the clamp surface 15g of the clamp unit 15 is adjusted.

Subsequently, the clamp 17 of the heat block 17 and the second clamp 16 attached to the heat block 17 via the heat block support 17a by the cam 17c.
The height of 6a is adjusted according to the lift of the cam 17c.

That is, the cam 17c is connected to the semiconductor chip 1
The heat block 17 is rotated until the distance between the back surface 1c of the heat block 17 and the heat block 17 becomes about 0.1 mm.
7 is moved closer to the semiconductor chip 1.

At this time, the clamp surface 16 a of the second clamp portion 16 starts to press the tape substrate 4 in the middle of the rise of the heat block 17.

That is, the tape substrate 4 starts to be clamped by the first clamp portion 15 and the second clamp portion 16 from the position where the clamp surface 16a of the second clamp portion 16 starts pressing the tape substrate 4.

Thereafter, the rotation of the cam 17c is stopped at a point where the distance between the back surface 1c of the semiconductor chip 1 and the heat block 17 is about 0.1 mm, and the rise of the heat block 17 is stopped.

Note that the second clamp portion 16 is
5, the clamp surface 16a of the second clamp portion 16 can be made to follow the clamp surface 15g of the first clamp portion 15 by the spring member 25. As a result, even when the clamp surface 15g and the clamp surface 16a are not parallel to each other but have an inclined component, the first clamp portion 15 and the second
The tape substrate 4 can be reliably supported without forming a gap between the tape substrate 4g and the tape substrate 4g.

Thereafter, the height of the upper surface 4f of the tape substrate 4 and the height of the tip end surface 7a of the nozzle 7 are matched.

Here, first, based on the position of the nozzle 7 recognized by the camera 26, X
The direction operating unit 22 and the Y-direction operating unit 21 are operated, whereby the nozzle 7 is arranged on the opening 4 e of the tape substrate 4.

In this state, Z is controlled by the nozzle controller 18.
The direction operating unit 20 is operated, and thereby the nozzle 7 is lowered.

At this time, the tip surface 7a of the nozzle 7 is adjusted to the height of the clamp surface 15g of the first clamp portion 15. However, the tip surface 7a of the nozzle 7 may be adjusted to the height of the upper surface 4f of the tape substrate 4.

Further, the height of the tip end surface 7a of the nozzle 7 may be adjusted to the height of the clamp surface 15g of the first clamp portion 15 or the height of the upper surface 4f of the tape substrate 4 by visual observation or by a dedicated sensor. Etc. are set up,
This may be performed using this sensor.

As a result, in the potting apparatus of the present embodiment, the upper surface 4f of this tape substrate 4 (the surface on the coating side)
Is set as the potting reference position (height) for the potting operation of the nozzle 7, and the nozzle controller 18 controls the height of the nozzle 7 from the upper surface 4 f of the tape substrate 4 to perform potting.

Then, the nozzle 7 is raised at one end, and the nozzle 7 is stopped at a position at a predetermined distance from the upper surface 4f of the tape substrate 4 which is the potting reference position.

Further, after adjusting the discharge pressure and discharge time of the resin 8 discharged from the nozzle 7 by the dispenser 23, the Z-direction operating unit 20 is operated by the nozzle control unit 18 to lower the nozzle 7 and the tape substrate 4. The nozzle 7 is inserted into the opening 4e, and the descent of the nozzle 7 is stopped at a height of 20 to 40 μm from the upper surface 4f of the tape substrate 4, and then potting is started.

At the time of potting, the nozzle control section 18 operates the Y-direction operation section 21 to move the nozzle 7 along the opening 4e of the tape substrate 4 while the resin 8 is moved, as shown in FIG. Is discharged.

That is, the resin 8 is discharged from the nozzle through the opening 4 e of the tape substrate 4, and the resin 8 is dropped on the coating portion 24 of the tape substrate 4, that is, the electrode pads 1 b and the lead portions 4 c of the semiconductor chip 1. Go.

Further, at the time of potting, the semiconductor chip 1, the elastomer 3 and the tape substrate 4 are heated by the heat block 17, thereby heating the resin 8 dropped on the coated portion 24 of the tape substrate 4. as a result,
The fluidity of the resin 8 can be improved.

The potting resin 8 used here is, for example, an epoxy liquid resin.

Subsequently, a predetermined amount of the resin 8 is filled in the coated portion 24 (the resin flow path portion 6) of the tape substrate 4, thereby forming the sealing portion 5.

At this time, since the resin flow path 6 has flow path openings 6a formed at both ends thereof, the air in the resin flow path 6 is released from the two flow path openings 6a to the outside. The resin 8 can be continuously injected.

Therefore, the sealing portion 5 shown in FIG. 4 where no void is formed can be formed.

The direction of movement of the nozzle 7 may be opposite to the direction shown in FIG.

Thereafter, as shown in step S10 of FIG. 6, the sealing member 5 is hardened by performing a curing bake of the sealing material.

Further, the ball supply for supplying the ball material for the bump electrode 2 shown in step S11 to the tape substrate 4 is performed to form the bump shown in step S12.

That is, the bump electrodes 2 are provided on the upper surface 4f of the tape substrate 4 which is the bump electrode mounting surface by being electrically connected to the lead portions 4c of the tape substrate 4.

At this time, the bumps are formed by supplying the ball material to the upper surface 4f of the tape substrate 4 through a reflow furnace.

Thus, the electrode pads 1b of the semiconductor chip 1 and the corresponding bump electrodes 2 are electrically connected via the wirings 4d and the lead portions 4c.

Thereafter, as shown in step S13, a mark for marking such as a model number of the product (CSP11) is made.

Subsequently, as shown in step S14, cutting is performed to separate the substrate main body portion 4a and the substrate protruding portion 4b, and individual CSPs 11 of a desired size are obtained.

According to the potting method and apparatus of the present embodiment and the method of manufacturing a semiconductor device (CSP11) using the same, the following effects can be obtained.

That is, when the potting of the resin 8 is performed, the upper surface 4f (the surface on the coating side) of the tape substrate 4 which is the member to be coated is positioned on the nozzle 7 side as a reference. By controlling the distance and dropping the resin 8, the resin 8 of the tape substrate 4 and the nozzle 7 can be connected independently of the deformation of the tape substrate 4 or the thickness variation or deformation of the carrier jig 19 supporting the tape substrate 4. Distance can be controlled.

Therefore, since there is no influence from the deformation of the tape substrate 4 or the thickness variation or deformation of the carrier jig 19 supporting the tape substrate 4, the distance between the tape substrate 4 and the tip end surface 7 a of the nozzle 7 is not affected. Distance can be controlled with high accuracy.

That is, in the potting, the deformation of the tape substrate 4 or the thickness variation and the deformation of the carrier jig 19 supporting the tape substrate 4 can be absorbed, whereby the variation of the applied amount of the resin 8 can be reduced. .

As a result, the reliability of the potting of the resin 8 can be improved.

The tape substrate 4 and the tip surface 7 of the nozzle 7
Since the distance to a can be controlled with high precision, the descending distance of the nozzle 7 during potting can be kept constant.

Therefore, it is possible to prevent the resin pool formed on the tip end surface 7a of the nozzle 7 from wrapping around the side surface 7b of the nozzle 7, thereby preventing the application position from shifting.

As a result, the potting reliability can be improved as described above.

When potting is performed with resin sealing on the tape substrate 4 on which the semiconductor chip 1 is mounted as in the manufacturing process of the semiconductor device of the present embodiment, the reliability of the potting can be improved. , CSP11
It is possible to improve the reliability and quality of such a semiconductor device.

At this time, in this embodiment, since the wiring substrate is the tape substrate 4, the tape substrate 4 is easily deformed, so that the reliability of potting can be further improved.

When potting is performed as a manufacturing process of the CSP 11, the tape substrate 4 and the tip surface 7
a can be controlled with high accuracy.
It is not necessary to measure the distance between the tape substrate 4 and the nozzle 7 for each P11 (semiconductor device).

As a result, the workability in potting sealing can be improved.

As a result, the manufacturability of the CSP 11 can be improved.

Further, of the first clamp portion 15 and the second clamp portion 16 which clamp and support the tape substrate 4, the second clamp portion 16 is provided with the clamp surface 16a of the first clamp portion 15 by the clamp surface 15g of the first clamp portion 15. Spring member 2 imitating
By providing 5 (elastic member), the second clamp portion 16 can follow a change in the height of the first clamp portion 15 (warpage or deformation of the first clamp portion 15).

That is, it is possible to finely adjust the height variation (including the inclination component and the like) in the second clamp portion 16.

Thus, when the tape substrate 4 is clamped by the first clamp portion 15 and the second clamp portion 16, the tape substrate 4 can be clamped irrespective of the warpage or deformation of the tape substrate 4. Variations in the amount and displacement of the application position can be prevented.

Further, since the respective heights (positions in the thickness direction of the tape substrate 4) of the first clamp portion 15 and the second clamp portion 16 are provided independently of each other so as to be freely adjustable, The tape substrate 4 can be clamped by causing the second clamp portion 16 to follow the first clamp portion 15, and as a result, similarly to the above, it is possible to prevent a variation in the application amount of the resin 8 and a shift in the application position.

Further, the potting apparatus of the present embodiment has a structure in which the first clamp portion 15 and the heat block 17 serving as a heating means have a height adjustable structure independently of each other. Irrespective of the temperature of the resin 8 via the tape substrate 4 by the heat block 17
Can be heated.

Thus, the resin 8 can be appropriately heated regardless of the warpage or deformation of the tape substrate 4.

As described above, the invention made by the inventor has been specifically described based on the embodiments of the invention. However, the invention is not limited to the embodiments of the invention, and does not depart from the gist of the invention. It is needless to say that various changes can be made.

For example, in the potting apparatus of the above embodiment, the case where the second clamp portion 16 is moved up and down in conjunction with the elevating operation (height adjustment) of the heat block 17 has been described. It may be provided so as to be able to move up and down (adjustable height).

Further, the tape substrate 4 may be continuously connected and conveyed without attaching the tape substrate 4 to the carrier jig 19.

Further, a guide rail 13 for guiding the movement of the carrier jig 19 may be provided so as to be able to move up and down. This allows the height of the carrier jig 19 to be raised on the clamp surface 15 g of the first clamp portion 15. Accuracy can be adjusted to further improve the potting reliability.

The mechanism for pushing up the carrier jig 19 may be provided with a mechanism for adjusting the height of the carrier jig 19.

Further, in the above-described embodiment, the case where the substrate main supporting portion is the first clamp portion 15 and the substrate auxiliary supporting portion is the second clamp portion 16, and the tape substrate 4 is sandwiched between the two has been described. However, the substrate main support portion may be the first clamp portion 15, and the substrate auxiliary support portion may be a vacuum suction mechanism.

That is, instead of sandwiching the tape substrate 4 between the substrate main support portion and the substrate auxiliary support portion, a heating means is also provided in the first clamp portion 15 and the tape is sucked from the first clamp portion 15 by vacuum suction. This is for holding the substrate 4 by suction.

In this case, it is not necessary to install a complicated mechanism on the back surface 1c side of the semiconductor chip 1 mounted on the tape substrate 4.

In the above-described embodiment, the case where the wiring substrate is the tape substrate 4 has been described. However, the wiring substrate may be a relatively thick printed wiring substrate (board) or the like. Even when a resin 8 such as a resist solution is applied from above, the resin 8 can be dropped from the nozzle 7 to the coated portion of the printed wiring board with reference to the coating side surface of the printed wiring board.

The shape of the elastomer 3, which is an elastic structure in the semiconductor device, is not limited to the elongated tape-like shape described in the above embodiment.
Between the semiconductor chip 1 and the tape substrate 4
Any other shape may be used as long as the plurality of electrode pads 1b and the lead portions 4c electrically connected thereto can be exposed.

In the above embodiment, the case where the semiconductor chip 1 is rectangular has been described, but the semiconductor chip 1 may be square.

Further, the location of the electrode pads 1b provided on the semiconductor chip 1 is not limited to the center pad arrangement, but may be an outer peripheral pad arrangement provided on the outer peripheral portion of the main surface 1a. .

In this case, the number of electrode pads 1b and the number of bump electrodes 2 are also the same as those shown in FIG. 4 or FIG.
It is not limited to 20 like SP11, but 2
The number may be 0 or less, or may be 20 or more.

The shape of the opening 4e of the tape substrate 4 is not limited to a rectangle, but can expose the electrode pads 1b of the semiconductor chip 1 and the leads 4c electrically connected thereto. As long as it is a shape, it may be a shape other than a rectangle.

Further, in the above-described embodiment, the case of the CSP 11 has been described as an example of the semiconductor device, but the semiconductor device is a TAB (Tape Automat) using the tape substrate 4.
ed Bonding) or the like, and the potting device in this case is a coating device for TAB.

[0167]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

(1). By controlling the distance of the nozzle from the coating-side surface, which is disposed on the nozzle side of the wiring substrate, which is the coating target member, and dripping the resin, the wiring substrate is deformed or the thickness of the holding jig that supports the wiring substrate The distance between the coating-side surface of the wiring board and the nozzle can be controlled irrespective of the variation or deformation of the wiring board, whereby the distance between the wiring board and the tip end face of the nozzle can be controlled with high accuracy.
Therefore, it is possible to reduce the variation in the application amount of the resin. As a result, the reliability of potting can be improved.

(2). Since the distance between the wiring board and the tip surface of the nozzle can be controlled with high precision, the nozzle descent distance during potting can be kept constant. Therefore, it is possible to prevent the resin pool formed on the tip end face of the nozzle from wrapping around the side face of the nozzle, thereby preventing the application position from being shifted.

(3). When potting is performed as resin sealing on a wiring board on which a semiconductor chip is mounted, the reliability of potting can be improved, and therefore, the reliability and quality of the semiconductor device can be improved.

(4). When potting is performed as a manufacturing process of a semiconductor device, the distance between the wiring substrate and the tip end surface of the nozzle can be controlled with high accuracy, so that it is not necessary to measure the distance between the wiring substrate and the nozzle for each semiconductor device. As a result, the workability in potting sealing can be improved. Thereby, the manufacturability of the semiconductor device can be improved.

[Brief description of the drawings]

FIGS. 1A and 1B are diagrams showing an example of the structure of a potting device according to an embodiment of the present invention, wherein FIG. 1A is a partially cutaway front view, and FIG. 2) is a sectional view showing an AA section.

FIG. 2 is an enlarged side view showing a part of a structure of a potting portion of the potting device shown in FIG.

FIG. 3 is a partially enlarged plan view showing a structure of a potting section shown in FIG. 2;

FIG. 4 is a perspective view showing a structure of a semiconductor device (CSP) assembled by a method of manufacturing a semiconductor device according to an embodiment of the present invention.

5 (a), 5 (b), 5 (c) and 5 (d) are views showing the structure of the semiconductor device shown in FIG. 4, wherein FIG. 5 (a) is a plan view, FIG. 5 (b) is a bottom view, and FIG. ) Is a sectional view showing an AA section of (b),
(D) is a sectional view showing a BB section of (b).

FIG. 6 is a manufacturing process flow showing an example of an assembling procedure in a method of manufacturing a semiconductor device according to an embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor chip 1a Main surface 1b Electrode pad (front electrode) 1c Back surface 2 Bump electrode (external terminal) 3 Elastomer 4 Tape substrate (wiring substrate) 4a Substrate body 4b Substrate protrusion 4c Lead 4d Wiring 4e Opening 4f Upper surface ( 4g Chip mounting surface 5 Sealing part 6 Resin flow path part 6a Flow path opening part 7 Nozzle 7a Tip face 7b Side face 8 Resin 9 Loader 10 Potting part 11 CSP (semiconductor device) 12 Unloader 13 Guide rail 14 Device Body 15 First clamp (substrate main support) 15a Opening window 15b Clamper support 15c Cam follower 15d Cam 15e Coupling 15f Motor 15g Clamp surface 16 Second clamp (substrate auxiliary support) 16a Clamp surface 17 Heat block ( Heating means) 17a Heat block Holder 17b Cam follower 17c Cam 17d Coupling 17e Motor 17f Outer periphery protrusion 18 Nozzle controller 19 Carrier jig 20 Z-direction operation unit 21 Y-direction operation unit 22 X-direction operation unit 23 Dispenser 24 Coated part 25 Spring member (elastic member) ) 26 Camera

Continued on the front page (72) Inventor Kazunori Higuchi 3-3-2 Fujibashi, Ome-shi, Tokyo Inside Hitachi Tokyo Electronics Co., Ltd. (72) Inventor Tomoji Suda 3-2-2 Fujibashi, Ome-shi, Tokyo Hitachi Tokyo Electronics Co., Ltd. In-house F term (reference) 4D075 AC07 BB22Y DA06 DB06 DB53 DC22 EA07 EB33 4F041 AA06 AB01 BA07 BA46 CA02 5F061 AA01 BA05 CA04 DE06

Claims (9)

[Claims] A step of disposing the nozzle and the wiring substrate such that a tip end surface of a nozzle capable of discharging a potting resin and a surface on a coating side of the wiring substrate face each other; Matching the position of the coating-side surface of the wiring substrate with the position of the tip end surface of the nozzle in a direction perpendicular to the surface of the nozzle; and, with reference to the coating-side surface of the wiring substrate, Controlling the distance of the wiring substrate from the surface on the application side to discharge the resin from the nozzle to drop the resin onto the application portion of the wiring substrate. 2. A heating method for heating a resin on a tape substrate on which a semiconductor chip is mounted, with a coating-side surface opposite to a chip mounting surface of the tape substrate facing a tip end surface of a nozzle capable of discharging a resin for potting. Disposing the tape substrate on a heat block, and a first clamp unit disposed on the nozzle side and a second clamp unit disposed on the heat block side of the tape substrate on which the semiconductor chip is mounted. Clamping and supporting on the heat block; matching the height of the coating side surface of the tape substrate with the height of the tip end surface of the nozzle; As a reference, the distance of the nozzle from the surface on the coating side of the tape substrate is controlled to control the semiconductor chip from the nozzle through the opening of the tape substrate. Dropping the resin onto a surface electrode of a pump. 3. A nozzle for discharging a potting resin, and a substrate main support portion disposed on the nozzle side and supporting a surface on a coating side of the wiring substrate facing a tip end surface of the nozzle when the resin is potted. A substrate auxiliary support part that assists the substrate main support part in supporting the wiring board; a heating unit that heats the resin; and a position of the tip end face of the nozzle with respect to the coating side surface of the wiring board. A nozzle control unit that performs potting of the resin by controlling a distance of the nozzle from the coating side surface of the wiring substrate by the nozzle control unit with reference to the coating side surface of the wiring substrate. A potting device. 4. A nozzle for discharging a resin for potting, a nozzle disposed on the nozzle side, supporting a surface on a coating side of a tape substrate facing a tip end surface of the nozzle at the time of potting the resin, and supporting the tape substrate. A first clamp portion having an opening formed corresponding to a surface electrode of a mounted semiconductor chip; a heat block provided on a side of the wiring board opposite to the nozzle side, for heating the resin; The first on the heat block
A second clamp unit that clamps the tape substrate together with the clamp unit to support the tape substrate, and a nozzle control unit that controls a position of the tip surface of the nozzle with respect to the application side surface of the tape substrate. The nozzle control unit controls the distance of the nozzle from the coating-side surface of the tape substrate by using the nozzle control unit with reference to the coating-side surface of the tape substrate, and the resin from the nozzle to the opening of the tape substrate. A potting device that drops the liquid onto the front surface electrode of the semiconductor chip through a portion. 5. The potting apparatus according to claim 4, wherein said second clamp portion is provided with an elastic member for causing a clamp surface of said second clamp portion to follow a clamp surface of said first clamp portion. A potting device. 6. The potting device according to claim 4, wherein the positions of the tape substrates in the thickness direction of the first clamp portion and the second clamp portion are adjusted independently of each other. A potting device, which is provided freely. 7. A step of mounting a semiconductor chip on a wiring board; a step of electrically connecting a surface electrode of the semiconductor chip to a corresponding lead portion of the wiring board; Arranging the wiring board and the nozzle such that a coating-side surface opposite to a chip mounting surface of the wiring substrate and a tip end surface of a nozzle capable of discharging a potting resin face each other; Matching the position of the coating-side surface of the wiring board with the position of the tip end surface of the nozzle in a direction perpendicular to the coating-side surface of the substrate; and based on the coating-side surface of the wiring substrate. Controlling the distance of the nozzle from the surface of the wiring substrate on the coating side to discharge the resin from the nozzle and drop the resin onto the front surface electrode of the semiconductor chip to seal the resin; Forming a part, a method of manufacturing a semiconductor device characterized by a step of said lead portion and electrically connected to provide an external terminal on the wiring board. 8. A step of mounting a semiconductor chip on a wiring board, a step of electrically connecting a surface electrode of the semiconductor chip and a corresponding lead of the wiring board, and a step of mounting the semiconductor chip. With the coating side, which is the opposite side to the chip mounting surface of the wiring board, and the tip end surface of the nozzle that can discharge the potting resin,
Arranging the wiring board on a heat block that heats the resin; and placing the wiring board on which the semiconductor chip is mounted on a first clamp portion disposed on the nozzle side and a third clamp portion disposed on the heat block side. A step of supporting the substrate on the heat block by clamping with the two clamps; a step of matching the height of the coating-side surface of the wiring board with the height of the tip end surface of the nozzle; The resin is dropped from the nozzle to the front surface electrode of the semiconductor chip through the opening of the wiring board by controlling the distance of the nozzle from the coating side surface of the wiring board with reference to the side surface. Manufacturing a semiconductor device, comprising the steps of: forming an encapsulation portion by forming an external terminal on the wiring substrate by being electrically connected to the lead portion; Method. 9. The method for manufacturing a semiconductor device according to claim 7, wherein a tape substrate is used as said wiring substrate.