JP2000299470A5 - - Google Patents

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Publication number
JP2000299470A5
JP2000299470A5 JP2000033838A JP2000033838A JP2000299470A5 JP 2000299470 A5 JP2000299470 A5 JP 2000299470A5 JP 2000033838 A JP2000033838 A JP 2000033838A JP 2000033838 A JP2000033838 A JP 2000033838A JP 2000299470 A5 JP2000299470 A5 JP 2000299470A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2000033838A
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Japanese (ja)
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JP4731655B2 (en
JP2000299470A (en
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Publication date
Application filed filed Critical
Priority to JP2000033838A priority Critical patent/JP4731655B2/en
Priority claimed from JP2000033838A external-priority patent/JP4731655B2/en
Publication of JP2000299470A publication Critical patent/JP2000299470A/en
Publication of JP2000299470A5 publication Critical patent/JP2000299470A5/ja
Application granted granted Critical
Publication of JP4731655B2 publication Critical patent/JP4731655B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000033838A 1999-02-12 2000-02-10 Method for manufacturing semiconductor device Expired - Fee Related JP4731655B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000033838A JP4731655B2 (en) 1999-02-12 2000-02-10 Method for manufacturing semiconductor device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP3451399 1999-02-12
JP1999034513 1999-02-12
JP11-34513 1999-02-12
JP2000033838A JP4731655B2 (en) 1999-02-12 2000-02-10 Method for manufacturing semiconductor device

Publications (3)

Publication Number Publication Date
JP2000299470A JP2000299470A (en) 2000-10-24
JP2000299470A5 true JP2000299470A5 (en) 2007-03-08
JP4731655B2 JP4731655B2 (en) 2011-07-27

Family

ID=26373333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000033838A Expired - Fee Related JP4731655B2 (en) 1999-02-12 2000-02-10 Method for manufacturing semiconductor device

Country Status (1)

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JP (1) JP4731655B2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003050405A (en) * 2000-11-15 2003-02-21 Matsushita Electric Ind Co Ltd Thin film transistor array, its manufacturing method and display panel using the same array
EP1421607A2 (en) 2001-02-12 2004-05-26 ASM America, Inc. Improved process for deposition of semiconductor films
JP4439794B2 (en) * 2001-09-10 2010-03-24 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP3949564B2 (en) 2001-11-30 2007-07-25 株式会社半導体エネルギー研究所 Laser irradiation apparatus and method for manufacturing semiconductor device
TWI276179B (en) * 2002-04-15 2007-03-11 Adv Lcd Tech Dev Ct Co Ltd Semiconductor device having semiconductor films of different crystallinity, substrate unit, and liquid crystal display, and their manufacturing method
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US7220627B2 (en) 2003-04-21 2007-05-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device where the scanning direction changes between regions during crystallization and process
JP4940532B2 (en) * 2003-09-25 2012-05-30 カシオ計算機株式会社 Manufacturing method of CMOS transistor
JP4573091B2 (en) * 2003-10-31 2010-11-04 ソニー株式会社 THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD, DISPLAY DEVICE AND ITS MANUFACTURING METHOD
US8334536B2 (en) 2007-03-16 2012-12-18 Samsung Display Co., Ltd. Thin film transistor, organic light emitting diode display device having the same, flat panel display device, and semiconductor device, and methods of fabricating the same
JP2011066243A (en) 2009-09-17 2011-03-31 Panasonic Corp Method of forming crystalline silicon film, thin-film transistor using the same, and display device

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02208635A (en) * 1989-02-08 1990-08-20 Seiko Epson Corp Semiconductor device
JP2925629B2 (en) * 1990-02-26 1999-07-28 富士写真フイルム株式会社 Image reading device
JPH0521340A (en) * 1991-07-10 1993-01-29 Ricoh Co Ltd Thin film semiconductor device, method and apparatus for manufacturing the same
JPH0697196A (en) * 1992-09-10 1994-04-08 Nippon Sheet Glass Co Ltd Semiconductor device and manufacture thereof
JPH0738110A (en) * 1993-07-21 1995-02-07 Toshiba Corp Manufacture of semiconductor device
JP2734359B2 (en) * 1993-12-27 1998-03-30 日本電気株式会社 Thin film transistor and method of manufacturing the same
JPH08139335A (en) * 1994-11-14 1996-05-31 Casio Comput Co Ltd Method of manufacturing thin film transistor
JPH09321313A (en) * 1996-05-24 1997-12-12 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JP2697730B2 (en) * 1996-09-10 1998-01-14 セイコーエプソン株式会社 Active matrix substrate manufacturing method
JPH10213775A (en) * 1997-01-29 1998-08-11 Dainippon Screen Mfg Co Ltd Light beam scanner
JPH10189998A (en) * 1996-12-20 1998-07-21 Sony Corp Thin-film semiconductor device for display and its manufacture
JP3753827B2 (en) * 1997-01-20 2006-03-08 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP3032801B2 (en) * 1997-03-03 2000-04-17 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP4090533B2 (en) * 1997-04-25 2008-05-28 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP3844561B2 (en) * 1997-06-10 2006-11-15 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JPH114001A (en) * 1997-06-11 1999-01-06 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
JP4027465B2 (en) * 1997-07-01 2007-12-26 株式会社半導体エネルギー研究所 Active matrix display device and manufacturing method thereof
JP3386713B2 (en) * 1998-03-09 2003-03-17 株式会社半導体エネルギー研究所 Method for manufacturing active matrix display device

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