JP2000294725A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JP2000294725A
JP2000294725A JP11101285A JP10128599A JP2000294725A JP 2000294725 A JP2000294725 A JP 2000294725A JP 11101285 A JP11101285 A JP 11101285A JP 10128599 A JP10128599 A JP 10128599A JP 2000294725 A JP2000294725 A JP 2000294725A
Authority
JP
Japan
Prior art keywords
layer
mounting structure
semiconductor device
wiring
element mounting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11101285A
Other languages
Japanese (ja)
Inventor
Kaoru Iwabuchi
馨 岩淵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP11101285A priority Critical patent/JP2000294725A/en
Publication of JP2000294725A publication Critical patent/JP2000294725A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain a semiconductor device three-dimensionally packaged by building various types of semiconductor devices, circuit elements and electronic circuits in a package. SOLUTION: A semiconductor device 10 is of a two-layered structure which has an element mounting structure 12 as a first layer, an intermediate substrate 14 provided on the first layer, and an element mounting structure 16 as a second layer provided on the intermediate substrate. The element mounting structure of the first layer has a first printed circuit board 18 and a semiconductor chip 20 mounted on the first board 18. The intermediate substrate 14 is formed as a frame-like plate member which has a large through-space for the chip 20 and has a thickness not smaller than a height H of the chip 20 to accommodate the chip 20 in the through-space. The element mounting structure of the second layer has a second printed circuit board 24, a circuit 26 such as a matching circuit mounted thereon, and a semiconductor chip 28. The element mounting structures of the first and second layers are electrically and mechanically connected by connecting wiring patterns thereof to form a three- dimensional package.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体装置に関
し、更に詳細には、半導体素子等の被実装素子を3次元
的にパッケージングした多層積層構造の半導体装置に関
するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly, to a semiconductor device having a multilayer laminated structure in which elements to be mounted such as semiconductor elements are three-dimensionally packaged.

【0002】[0002]

【従来の技術】近年、平面的、二次元的なマルチ・チッ
プ・モジュール(Multi]Chip]ModuleMCM)に比べ
て、高実装密度で実装でき、かつチップ間の相互接続密
度を減らすことができる3次元的なMCMの開発が注目
されている。ICチップを3次元パッケージングした半
導体装置は、例えば、高密度実装化によるコンパクト性
及び動作高速性を必要とするコンピュータの記憶装置、
或いは高速アクセス性とコンパクト性とを必要とする大
規模キャッシュ・メモリの分野で利用価値が大きい。
2. Description of the Related Art In recent years, as compared with a planar and two-dimensional multi-chip module (Multi-Chip] Module MCM), the mounting density can be increased and the interconnection density between chips can be reduced. Attention has been paid to the development of dimensional MCM. A semiconductor device in which an IC chip is three-dimensionally packaged is, for example, a storage device of a computer that requires compactness and high-speed operation due to high-density mounting;
Alternatively, it is very useful in the field of large-scale cache memories requiring high-speed access and compactness.

【0003】3次元パッケージングの従来の一つの方法
は、ICチップを積み重ねて一つのキューブを形成する
方法である。この方法では、先ず、TABフィルムのよ
うな薄膜上で第1層目のICチップを金線による接続方
式により、又はフリップチップ接続方式により相互接続
し、電気試験及びバーンインを行う。次いで、第1層目
のICチップ上に薄膜、はんだボール等を介して第2層
目のICチップを積み重ねて、第1層目のICチップと
同様にボンディング、電気試験及びバーンインを行い、
順次、多層のICチップ層を積み重ねて、3次元パッケ
ージングのキューブを形成する。また、別の方法は、リ
ードフレーム、又は実装基板のダイパットの表裏両面に
ICチップ又はICパッケージを実装する方法である。
[0003] One conventional method of three-dimensional packaging is a method of stacking IC chips to form one cube. In this method, first, a first-layer IC chip is interconnected on a thin film such as a TAB film by a connection method using gold wires or a flip-chip connection method, and an electrical test and burn-in are performed. Next, a second-layer IC chip is stacked on the first-layer IC chip via a thin film, a solder ball, or the like, and bonding, an electrical test, and burn-in are performed in the same manner as the first-layer IC chip.
In succession, multiple layers of IC chips are stacked to form a cube for three-dimensional packaging. Another method is to mount an IC chip or an IC package on both the front and back surfaces of a lead frame or a die pad of a mounting board.

【0004】[0004]

【発明が解決しようとする課題】しかし、上述した従来
の3次元実装方法は、同一又は同種の半導体集積回路か
らなるICチップを3次元的に実装するものであるか
ら、異種の半導体集積回路からなるICチップを3次元
的に実装する際には、適用することが難しく、また、I
Cチップを含む電子部品の実装密度を高める上で限界が
あって、実用化上で満足すべき域に達していなかった。
また、従来の3次元実装方法は、半導体集積回路からな
るICチップを積層することを狙いとしており、コンデ
ンサ等からなる1GHz程度の高周波回路に必要な整合
回路等を含むシステムとしての3次元実装は、考慮され
ていなかった。例えば、携帯電話等に用いられているパ
ワーアンプ、スイッチ系のアンプモジュールは、モジュ
ール内に平面的実装の整合回路が形成されているが、こ
れらを3次元的に実装して、コンパクトな携帯電話を実
現することに、従来の3次元実装方法を適用することは
難しかった。
However, since the above-described conventional three-dimensional mounting method three-dimensionally mounts an IC chip composed of the same or the same kind of semiconductor integrated circuit, different types of semiconductor integrated circuits are used. When three-dimensionally mounting an IC chip, it is difficult to apply
There is a limit in increasing the mounting density of electronic components including the C chip, and it has not reached a satisfactory range for practical use.
Further, the conventional three-dimensional mounting method aims at stacking IC chips composed of semiconductor integrated circuits. The three-dimensional packaging as a system including a matching circuit and the like necessary for a high-frequency circuit of about 1 GHz composed of a capacitor or the like is not suitable. Was not taken into account. For example, a power amplifier and a switch amplifier module used in a mobile phone or the like have a matching circuit formed in a two-dimensional manner in the module. It has been difficult to apply the conventional three-dimensional mounting method to realize the above.

【0005】そこで、本発明の目的は、種々の半導体装
置、回路素子、及び電子回路を組み込んで、3次元パッ
ケージングした半導体装置を提供することである。
Accordingly, an object of the present invention is to provide a three-dimensionally packaged semiconductor device incorporating various semiconductor devices, circuit elements, and electronic circuits.

【0006】[0006]

【課題を解決するための手段】上記目的を達成するため
に、本発明に係る半導体装置は、被実装素子を配線基板
上に実装した第1層の素子実装構造と、第1層の素子実
装構造上に介在体を介して設けられ、被実装素子を配線
基板上に実装した第2層の素子実装構造とを有する2層
積層構造として構成され、被実装素子は、半導体素子と
回路素子との少なくともいずれかで形成された回路を有
する回路体、半導体素子、及び回路素子のうちの少なく
ともいずれかであり、配線基板は、被実装素子を実装さ
せる配線パターンを両面に有し、かつ両面の配線パター
ンの対応する配線同士を接続させ、介在体は、中央領域
に空間部を、及び空間部の周辺の両面に配線パターンを
それぞれ有する板状体であって、空間部内に第1層の素
子実装構造の被実装素子を収容し、かつ、第1層及び第
2層の素子実装構造の配線基板に、それぞれ、配線パタ
ーン同士の接続によって電気的及び機械的に接続にされ
ているとしている。
In order to achieve the above object, a semiconductor device according to the present invention comprises a first-layer element mounting structure in which elements to be mounted are mounted on a wiring board, and a first-layer element mounting structure. The device is configured as a two-layer laminated structure having a second-layer device mounting structure in which a mounted device is mounted on a wiring board, the device being mounted on a wiring board, and the mounted device includes a semiconductor device and a circuit device. A circuit body having a circuit formed by at least one of the above, at least one of the semiconductor element, and the circuit element, the wiring board has a wiring pattern for mounting the mounted element on both sides, and both sides Corresponding wires of the wiring pattern are connected to each other, and the intervening body is a plate-like body having a space portion in a central region and a wiring pattern on both surfaces around the space portion, and a first layer element is provided in the space portion. Mounting structure Housing the element and the wiring substrate of the element mounting structure of the first and second layers, respectively, and are electrically and mechanically connected by a connection between the wiring patterns.

【0007】本発明では、介在体の空間部内に第1層の
素子実装構造の被実装素子を収容することにより、高密
度で3次元パッケージングすることができる。介在体
は、例えば、被実装素子の寸法より大きな貫通空間を中
央領域に備えた、被実装素子の高さより厚さの厚い枠状
の板状体でもよく、また、被実装素子の周りに配置した
複数個の被実装素子の高さより厚さの厚い介在物で構成
されていても良い。また、空間部は貫通空間である必要
はなく、第1層の素子実装構造の被実装素子を収容でき
る限り、空洞状のものでも良い。配線基板は、片面基板
でも、両面基板でも良く、実用的にはプリント基板を使
用する。
According to the present invention, high-density three-dimensional packaging can be achieved by accommodating the mounted element having the first-layer element mounting structure in the space of the intervening body. The intervening body may be, for example, a frame-like plate-shaped body having a through space larger than the dimension of the mounted element in the central region and having a thickness greater than the height of the mounted element, and may be arranged around the mounted element. It may be constituted by inclusions thicker than the height of the plurality of mounted elements. The space does not need to be a through space, and may be a hollow space as long as the device to be mounted having the first-layer device mounting structure can be accommodated. The wiring board may be a single-sided board or a double-sided board, and a printed board is practically used.

【0008】本発明に係る半導体装置は、第2層の素子
実装構造上に、更に介在体と素子実装構造とからなる積
層構造を所定層数繰り返して備えることにより、多層積
層構造として構成することができる。
[0008] The semiconductor device according to the present invention may be configured as a multilayer laminated structure by repeatedly providing a laminated structure composed of an interposer and an element mounted structure on the second layer element mounting structure by a predetermined number of layers. Can be.

【0009】本発明の好適な実施態様では、配線基板の
両面に設けられた配線パターンは、両面の配線パターン
の対応する配線が、基板を貫通したスルーホールに設け
た導線により相互に接続されている。また、別の態様で
は、配線基板の両面に設けられた配線パターンは、両面
の配線パターン中の対応する配線が、基板側面に設けた
側面配線により相互に接続されている。
In a preferred embodiment of the present invention, the wiring patterns provided on both sides of the wiring board are such that the corresponding wirings of the wiring patterns on both sides are mutually connected by conducting wires provided in through holes penetrating the board. I have. In another aspect, the wiring patterns provided on both sides of the wiring board are such that the corresponding wirings in the wiring patterns on both sides are mutually connected by side wiring provided on the side surface of the substrate.

【0010】本発明に係る半導体装置では、被実装素子
の種類は、制約はなく、半導体素子、電気抵抗又は静電
容量素子等の回路素子、或いは半導体素子及び/または
回路素子で形成された電子回路からなる回路体のいずれ
でも良く、例えば、配線基板上に半導体素子と整合回路
とを実装したものであっても良い。
In the semiconductor device according to the present invention, the type of the mounted element is not limited, and is a semiconductor element, a circuit element such as an electric resistance or a capacitance element, or an electronic element formed by the semiconductor element and / or the circuit element. Any of circuit bodies composed of circuits may be used. For example, a circuit element in which a semiconductor element and a matching circuit are mounted on a wiring board may be used.

【0011】被実装素子の接続方式には制約はなく、例
えばフリップチップ接続方式又はワアイヤボンディング
方式で実装されていても良い。
There is no restriction on the connection method of the mounted elements, and they may be mounted by, for example, a flip chip connection method or a wire bonding method.

【0012】[0012]

【発明の実施の形態】以下に、添付図面を参照して、実
施形態例に基づいて本発明をより詳細に説明する。実施形態例1 本実施形態例は、本発明に係る半導体装置の実施形態の
一例であって、図1は本実施形態例の半導体装置の展開
斜視図、図2は本実施形態例の半導体装置の模式的展開
断面図、及び図3は半導体装置の実装用端子の配置図で
ある。半導体装置10は、図1及び図2に示すように、
第1層の素子実装構造12と、第1層の素子実装構造1
2上の第1の中間構造として設けられた中間基板14
と、中間基板14上に設けられた第2層の素子実装構造
16とを有する2層積層構造として構成されている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail based on embodiments with reference to the accompanying drawings. Embodiment 1 This embodiment is an example of an embodiment of a semiconductor device according to the present invention. FIG. 1 is an exploded perspective view of the semiconductor device of this embodiment, and FIG. 2 is a semiconductor device of this embodiment. And FIG. 3 is a layout view of mounting terminals of the semiconductor device. The semiconductor device 10 includes, as shown in FIGS.
First-layer element mounting structure 12 and first-layer element mounting structure 1
2. An intermediate substrate 14 provided as a first intermediate structure on
And an element mounting structure 16 of a second layer provided on the intermediate substrate 14.

【0013】第1層の素子実装構造12は、第1のプリ
ント基板18と第1のプリント基板18上に実装した半
導体チップ20とから構成されている。
The element mounting structure 12 of the first layer includes a first printed circuit board 18 and a semiconductor chip 20 mounted on the first printed circuit board 18.

【0014】中間基板14は、第1のプリント基板14
上に、第1層の素子実装構造12の被実装素子の大きさ
W以上の幅の開口を備え、被実装素子の高さH以上の厚
さの板状体、即ちこの場合、半導体チップ20の幅W以
上の幅の貫通空間22を備え、半導体チップ20の高さ
H以上の厚さを有する有する枠状の板状体として形成さ
れている。中間基板14は、第1層の素子実装構造12
の配線基板18上に積層された際、貫通空間22内に半
導体チップ20を収容する。なお、枠状の板状体に代え
て、中間基板14は、被実装素子の高さH以上の厚さの
2個の板状体として形成され、第1のプリント基板14
の両端部上に、第1層の素子実装構造12の被実装素子
の幅W以上の間隔を開けて設けられたもの、即ち、この
場合、半導体チップ20の高さH以上の厚さを有する有
する2個の板状体として形成されて、半導体チップ20
の幅W以上の間隔22を開けて配置されたものでも良
い。
The intermediate substrate 14 is a first printed circuit board 14
An opening having a width equal to or larger than the size W of the device to be mounted of the device mounting structure 12 of the first layer is provided thereon, and a plate having a thickness equal to or higher than the height H of the device to be mounted, that is, Is formed as a frame-like plate having a thickness equal to or greater than the height H of the semiconductor chip 20. The intermediate substrate 14 is provided with the element mounting structure 12 of the first layer.
When the semiconductor chip 20 is stacked on the wiring board 18, the semiconductor chip 20 is accommodated in the through space 22. In place of the frame-shaped plate, the intermediate substrate 14 is formed as two plate-shaped members having a thickness equal to or more than the height H of the mounted element.
Are provided on both ends of the semiconductor chip 20 with an interval equal to or greater than the width W of the element to be mounted of the element mounting structure 12 of the first layer, that is, in this case, have a thickness equal to or greater than the height H of the semiconductor chip 20. The semiconductor chip 20 is formed as two plate-like bodies having
May be arranged with an interval 22 larger than the width W.

【0015】第2層の素子実装構造16は、第2のプリ
ント基板24と、第2のプリント基板24上に実装し
た、半導体チップ及び回路素子なる整合回路等の回路体
26と、回路体26以外の半導体チップ28とから構成
されている。
The element mounting structure 16 of the second layer includes a second printed board 24, a circuit body 26 such as a matching circuit which is a semiconductor chip and a circuit element mounted on the second printed board 24, and a circuit body 26. And other semiconductor chips 28.

【0016】第1のプリント基板18は、図1及び図2
に示すように、半導体装置10を実装基板(図示せず)
に実装する際に、実装基板の接続端子と接続する配線パ
ターン30を裏面に、半導体チップ20の電極32と接
続する配線パターン34を表面に備え、更に、基板を貫
通し、裏面の配線パターン30と表面の配線パターン3
4とを接続する導線を貫通させるスルーホール36を備
えている。半導体チップ20は、フリップチップ接合型
半導体チップであって、半導体チップ20の電極32を
第1のプリント基板18の配線パターン34にはんだ接
合38させることによりフリップチップ・ボンディング
されている。
The first printed circuit board 18 is shown in FIGS.
As shown in FIG. 1, the semiconductor device 10 is mounted on a mounting substrate (not shown).
When mounting on a substrate, a wiring pattern 30 connected to the connection terminal of the mounting substrate is provided on the back surface, and a wiring pattern 34 connected to the electrode 32 of the semiconductor chip 20 is provided on the front surface. And wiring pattern 3 on the surface
4 is provided. The semiconductor chip 20 is a flip-chip bonding type semiconductor chip, and is flip-chip bonded by bonding the electrodes 32 of the semiconductor chip 20 to the wiring pattern 34 of the first printed circuit board 18 by solder bonding.

【0017】中間基板14は、図1及び図2に示すよう
に、中間基板14を第1のプリント基板18に接合する
際に、第1のプリント基板20の配線パターン34と接
続させる配線パターン40を裏面に、第2のプリント基
板24を中間基板14を接合する際に、第2のプリント
基板24の裏面の配線パターン42と接続させる配線パ
ターン44を表面に備えている。また、中間基板14
は、中間基板14を貫通し、裏面の配線パターン40と
表面の配線パターン44とを接続する導線を貫通させる
スルーホール46を備えている。
As shown in FIGS. 1 and 2, when the intermediate substrate 14 is bonded to the first printed circuit board 18, the intermediate substrate 14 is connected to the wiring pattern 40 of the first printed circuit board 20. Is provided on the back surface, and a wiring pattern 44 is provided on the front surface for connecting to the wiring pattern 42 on the back surface of the second printed board 24 when the second printed board 24 is bonded to the intermediate board 14. Also, the intermediate substrate 14
Is provided with a through hole 46 that penetrates the intermediate substrate 14 and penetrates a conductive wire connecting the wiring pattern 40 on the back surface and the wiring pattern 44 on the front surface.

【0018】中間基板14は、第1のプリント基板18
の表面配線パターン34と中間基板14の裏面配線パタ
ーン40との間ではんだ接合48により第1のプリント
基板18に接合され、中間基板14の表面配線パターン
44と第2のプリント基板24の表面配線パターン42
との間ではんだ接合50により第2のプリント基板24
に接合されている。はんだ接合48を行う際には、第1
のプリント基板18の表面配線パターン34上及び中間
基板14上の表面配線パターン44上にはんだを印刷
し、次いで中間基板14をマウンターに載せて、リフロ
ー処理を行うことにより接続できる。また、はんだ接合
50を行う際には、中間基板14上の表面配線パターン
44上にはんだを印刷し、次いで第2のプリント基板2
4をマウンターに載せて、リフロー処理を行うことによ
り接続できる。はんだ接合48、50は、通常の共晶は
んだでも、その他の組成のはんだを用いても良く、ま
た、導電性の接着剤、異方性導電膜などを用いても良
い。
The intermediate printed circuit board 14 includes a first printed circuit board 18.
The surface wiring pattern 34 of the intermediate substrate 14 and the rear surface wiring pattern 40 of the intermediate substrate 14 are joined to the first printed circuit board 18 by soldering 48, and the surface wiring pattern 44 of the intermediate substrate 14 and the surface wiring of the second printed circuit board 24 are Pattern 42
Between the second printed circuit board 24 and the
Is joined to. When performing the solder joint 48, the first
The solder can be printed on the surface wiring pattern 34 on the printed circuit board 18 and on the surface wiring pattern 44 on the intermediate substrate 14, and then the intermediate substrate 14 can be mounted on a mounter and connected by performing a reflow process. When performing the solder joint 50, solder is printed on the surface wiring pattern 44 on the intermediate substrate 14, and then the second printed circuit board 2 is printed.
4 can be connected by mounting on a mounter and performing a reflow process. For the solder joints 48 and 50, a normal eutectic solder or a solder having another composition may be used, or a conductive adhesive or an anisotropic conductive film may be used.

【0019】第2のプリント基板24は、図1及び図2
に示すように、中間基板14の配線パターン44と接続
させる配線パターン42を裏面に、回路体26、半導体
チップ28の電極(図示せず)と接続する配線パターン
52を表面に備え、更に、基板を貫通し、裏面配線パタ
ーン42と表面配線パターン52とを接続する導線を貫
通させるスルーホール54を備えている。回路体26、
半導体チップ28は、第2のプリント基板24の表面配
線パターン52にはんだ接合56させることにより第2
のプリント基板24に実装されている。
The second printed circuit board 24 is shown in FIGS.
As shown in the figure, a wiring pattern 42 connected to the wiring pattern 44 of the intermediate substrate 14 is provided on the back surface, and a wiring pattern 52 connected to electrodes (not shown) of the circuit body 26 and the semiconductor chip 28 is provided on the front surface. , And a through hole 54 through which a conductive wire connecting the back wiring pattern 42 and the front wiring pattern 52 is passed. Circuit body 26,
The semiconductor chip 28 is solder-bonded 56 to the surface wiring pattern 52 of the second printed circuit board 24,
Is mounted on the printed circuit board 24.

【0020】半導体装置10は、第1のプリント基板1
8の裏面の配線パターン30上に、図3に示すように、
実装基板(図示せず)とはんだ接合するためのはんだバ
ンプを備えた端子58をアレイ状に備えている。
The semiconductor device 10 includes a first printed circuit board 1
8 on the wiring pattern 30 on the back surface of the substrate 8 as shown in FIG.
Terminals 58 having solder bumps for solder bonding with a mounting board (not shown) are provided in an array.

【0021】以上の構成により、半導体装置10では、
第1層の素子実装構造12の半導体チップ20は、配線
パターン34及びスルーホール36を貫通する導線(図
示せず)を経て配線パターン30に接続されている。
With the above configuration, in the semiconductor device 10,
The semiconductor chip 20 of the element mounting structure 12 of the first layer is connected to the wiring pattern 30 via a conductive wire (not shown) penetrating the wiring pattern 34 and the through hole 36.

【0022】第2層の素子実装構造16の回路体26及
び半導体チップ28は、配線パターン52、スルーホー
ル54を貫通する導線(図示せず)、配線パターン42
及びはんだ接合50を経て中間基板14の配線パターン
44に接続され、更に、スルーホール46を貫通する導
線(図示せず)、配線パターン40及びはんだ接合48
を経て第1のプリント基板18の配線パターン34に接
続され、更に、スルーホール36を貫通する導線(図示
せず)を経て配線パターン30に接続されている。そし
て、半導体チップ20、回路体26及び半導体チップ2
8は、端子58を介して、実装基板の配線パターンに接
続される。
The circuit body 26 and the semiconductor chip 28 of the element mounting structure 16 of the second layer include a wiring pattern 52, a lead (not shown) penetrating through the through hole 54, and a wiring pattern 42.
And a wiring (not shown) that is connected to the wiring pattern 44 of the intermediate substrate 14 via the solder joint 50 and penetrates the through hole 46, the wiring pattern 40, and the solder bonding 48.
Is connected to the wiring pattern 34 of the first printed circuit board 18 via a wire, and further connected to the wiring pattern 30 via a conducting wire (not shown) penetrating the through hole 36. Then, the semiconductor chip 20, the circuit body 26, and the semiconductor chip 2
8 is connected to the wiring pattern of the mounting board via the terminal 58.

【0023】第1層の素子実装構造12では、被実装素
子として半導体チップ16を実装しているが、必ずしも
半導体チップに限らず、半導体チップ16に加えて、ま
たは半導体チップ16に代えて、他の種類の半導体チッ
プ、抵抗素子、容量素子等の回路素子、整合回路等を実
装しても良い。また、第2層の素子実装構造16では、
被実装素子として整合回路等の回路体26と半導体チッ
プ28を実装しているが、必ずしもそれらにに限らず、
回路体26と半導体チップ28に加えて、又は回路体2
6と半導体チップ28に代えて、他の半導体チップ、回
路体、抵抗素子、容量素子を実装しても良い。
In the element mounting structure 12 of the first layer, the semiconductor chip 16 is mounted as an element to be mounted. However, the semiconductor chip 16 is not necessarily limited to the semiconductor chip, and may be used in addition to or instead of the semiconductor chip 16. Semiconductor chips, circuit elements such as resistance elements and capacitance elements, matching circuits and the like may be mounted. In the element mounting structure 16 of the second layer,
Although a circuit body 26 such as a matching circuit and a semiconductor chip 28 are mounted as elements to be mounted, the invention is not limited thereto.
In addition to the circuit body 26 and the semiconductor chip 28, or the circuit body 2
Instead of 6 and the semiconductor chip 28, another semiconductor chip, a circuit body, a resistor, and a capacitor may be mounted.

【0024】本実施形態例では、第2層の素子実装構造
16上に、中間基板14と同じ構成の中間基板と、第2
層の素子実装構造16と同じ構造の第3層の素子実装構
造を設けることにより、3層積層構造の半導体装置を形
成することができ、更に、順次、中間基板及び素子実装
構造を設けることにより、所望の積層数を3次元パッケ
ージングした半導体装置を実現できる。
In the present embodiment, an intermediate substrate having the same structure as the intermediate substrate 14 is provided on the element mounting structure 16 of the second layer.
By providing an element mounting structure of the third layer having the same structure as the element mounting structure 16 of the layer, a semiconductor device having a three-layer laminated structure can be formed. Further, by providing the intermediate substrate and the element mounting structure in sequence, A semiconductor device in which a desired number of layers are three-dimensionally packaged can be realized.

【0025】実施形態例2 本実施形態例は、本発明に係る半導体装置の実施形態の
別の例であって、図4は本実施形態例の半導体装置の模
式的断面図である。本実施形態例の半導体装置60は、
図4に示すように、ブランドビアホール62を有する中
間基板64を第1の中間構造として備えていることを除
いて、実施形態例1の半導体装置10と同じ構成を備え
ている。ブランドビアホール62を備えた中間基板64
は、基板内に配線パターン66を備えているので、配線
の自由度が大きく、異種半導体チップを第2のプリント
基板24上に実装する際に便利である。
Embodiment 2 This embodiment is another example of the embodiment of the semiconductor device according to the present invention. FIG. 4 is a schematic sectional view of the semiconductor device of this embodiment. The semiconductor device 60 of the present embodiment is
As shown in FIG. 4, the semiconductor device 10 has the same configuration as the semiconductor device 10 of the first embodiment, except that an intermediate substrate 64 having a brand via hole 62 is provided as a first intermediate structure. Intermediate substrate 64 with brand via hole 62
Has a wiring pattern 66 in the substrate, and therefore has a high degree of freedom in wiring, which is convenient when mounting a heterogeneous semiconductor chip on the second printed circuit board 24.

【0026】実施形態例3 本実施形態例は、本発明に係る半導体装置の実施形態の
更に別の例であって、図5は本実施形態例の半導体装置
の模式的展開断面図、及び図6は本実施形態例の半導体
装置の実装用端子の配置図である。本実施形態例の半導
体装置70は、配線パターン同士を接続する方式が異な
ること、及び、半導体装置70を実装基板に接続する端
子の形式及び配置が異なることを除いて、実施形態例1
の半導体装置10と同じ構成を備えている。
Embodiment 3 This embodiment is still another example of the embodiment of the semiconductor device according to the present invention. FIG. 5 is a schematic expanded sectional view of the semiconductor device of this embodiment and FIG. FIG. 6 is a layout view of mounting terminals of the semiconductor device of the present embodiment. The semiconductor device 70 according to the first embodiment is different from the semiconductor device 70 according to the first embodiment except that the method for connecting the wiring patterns is different and the type and arrangement of the terminals for connecting the semiconductor device 70 to the mounting board are different.
The configuration is the same as that of the semiconductor device 10 of FIG.

【0027】半導体装置70は、図5に示すように、実
施形態例1の半導体装置10の第1のプリント基板18
に設けたスルーホール36を貫通して第1のプリント基
板18の裏面配線パターン30と表面配線パターン34
とを接続する導線(図示せず)に代えて、第1のプリン
ト基板18の基板側面に設けた基板側面配線72を備え
ている。また、半導体装置70は、中間基板14に設け
たスルーホール46を貫通して中間基板14の裏面配線
パターン40と表面配線パターン44とを接続する導線
(図示せず)に代えて、中間基板14の側面に設けた基
板側面配線74を備えている。更に、半導体装置70
は、第2のプリント基板24に設けたスルーホール54
を貫通して第2のプリント基板24の裏面配線パターン
42と表面配線パターン52とを接続する導線(図示せ
ず)に代えて、第2のプリント基板24の基板側面に設
けた基板側面配線76を備えている。
As shown in FIG. 5, the semiconductor device 70 includes a first printed circuit board 18 of the semiconductor device 10 of the first embodiment.
The back wiring pattern 30 and the front wiring pattern 34 of the first printed circuit board 18 penetrate through holes 36 provided in the first printed circuit board 18.
A substrate side wiring 72 provided on the side surface of the first printed circuit board 18 is provided in place of a conductive wire (not shown) for connecting the first printed circuit board 18 to the first printed circuit board 18. In addition, the semiconductor device 70 includes a conductor (not shown) that penetrates the through hole 46 provided in the intermediate substrate 14 and connects the back wiring pattern 40 and the front wiring pattern 44 of the intermediate substrate 14, instead of the intermediate substrate 14. The substrate side wiring 74 provided on the side surface of the substrate is provided. Further, the semiconductor device 70
Are through holes 54 provided in the second printed circuit board 24.
Instead of conducting wires (not shown) connecting the back wiring pattern 42 and the front wiring pattern 52 of the second printed board 24 to the side of the second printed board 24, the board side wiring 76 provided on the side of the board of the second printed board 24. It has.

【0028】半導体装置70は、図6に示すように、実
装基板(図示せず)とはんだ接合するためのはんだバン
プを備え、第1のプリント基板18の基板側面配線72
に接続された端子78を周縁に沿って備えている。
As shown in FIG. 6, the semiconductor device 70 is provided with solder bumps for solder connection with a mounting board (not shown).
Are provided along the periphery.

【0029】実施形態例1から3では、第1のプリント
基板18及び第2のプリント基板24には、片面に被実
装素子を実装する片面実装基板を使用しているが、両面
基板でも良く、また、多層基板を用いてもよい。また、
半導体チップは、フリップチップ接合型としているが、
ワイヤーボンディング方式の半導体チップでも良い。
In the first to third embodiments, the first printed circuit board 18 and the second printed circuit board 24 use single-sided mounting boards on which elements to be mounted are mounted on one side. Further, a multilayer substrate may be used. Also,
Although the semiconductor chip is a flip chip bonding type,
A semiconductor chip of a wire bonding method may be used.

【0030】[0030]

【発明の効果】本発明の構成により、同一基板上に半導
体集積回路及び整合回路を実装し、これを3次元的に積
層して実装密度を高め、電気特性の安定化を図ることが
できる。更に詳細には、本発明に係る半導体装置は、次
のような効果を奏する。 1)高周波モジュール回路に必要な半導体素子と整合回
路とを3次元的に実装することにより、実装面積を大幅
に削減することができる。 2)高周波動作用半導体素子の周辺に電気的整合回路を
設けることにより、電気的損失を最小限に抑えることが
でき、高周波特性を最大限に向上させることができる。 3)複数の半導体素子と整合回路とを同一パッケージ内
に三次元パッケージングできるため、モジュールとして
も、半導体素子特性を最大限に引き出せることができ
る。
According to the structure of the present invention, a semiconductor integrated circuit and a matching circuit are mounted on the same substrate, and these are stacked three-dimensionally to increase the mounting density and to stabilize the electrical characteristics. More specifically, the semiconductor device according to the present invention has the following effects. 1) The mounting area can be significantly reduced by three-dimensionally mounting the semiconductor element and the matching circuit required for the high-frequency module circuit. 2) By providing an electrical matching circuit around the semiconductor element for high-frequency operation, electrical loss can be minimized, and high-frequency characteristics can be maximized. 3) Since a plurality of semiconductor elements and a matching circuit can be three-dimensionally packaged in the same package, the semiconductor element characteristics can be maximized even as a module.

【図面の簡単な説明】[Brief description of the drawings]

【図1】実施形態例1の半導体装置の展開斜視図であ
る。
FIG. 1 is an exploded perspective view of a semiconductor device according to a first embodiment.

【図2】実施形態例1の半導体装置の模式的展開断面図
である。
FIG. 2 is a schematic developed cross-sectional view of the semiconductor device according to the first embodiment.

【図3】実施形態例1の半導体装置の実装用端子の配置
図である。
FIG. 3 is a layout view of mounting terminals of the semiconductor device of the first embodiment.

【図4】実施形態例2の半導体装置の模式的断面図であ
る。
FIG. 4 is a schematic cross-sectional view of a semiconductor device according to a second embodiment.

【図5】実施形態例3の半導体装置の模式的展開断面図
である。
FIG. 5 is a schematic developed sectional view of a semiconductor device according to a third embodiment.

【図6】実施形態例3の半導体装置の実装用端子の配置
図である。
FIG. 6 is a layout view of mounting terminals of the semiconductor device of Embodiment 3;

【符号の説明】[Explanation of symbols]

10……実施形態例1の半導体装置、12……第1層の
素子実装構造、14……中間基板、16……第2層の素
子実装構造、18……第1のプリント基板、20……半
導体チップ、22……開口、24……第2のプリント基
板、26……回路体、28……半導体チップ、30……
配線パターン、32……半導体チップの電極、34……
配線パターン、36……スルーホール、38……はんだ
接合、40……配線パターン、42……配線パターン、
44……配線パターン、46……スルーホール、48…
…はんだ接合、50……はんだ接合、52……配線パタ
ーン、54……スルーホール、56……はんだ接合、5
8……端子、60……実施形態例2の半導体装置、62
……ブランドビアホール、64……中間基板、66……
配線パターン、70……実施形態例3の半導体装置、7
2……基板側面配線、74……基板側面配線、76……
基板側面配線、78……端子。
10 semiconductor device of embodiment 1, 12 element mounting structure of first layer, 14 intermediate board, 16 element mounting structure of second layer, 18 first printed circuit board, 20 ... Semiconductor chip, 22 ... Opening, 24 ... Second printed board, 26 ... Circuit, 28 ... Semiconductor chip, 30 ...
Wiring pattern, 32 ... Semiconductor chip electrode, 34 ...
Wiring pattern, 36: Through hole, 38: Solder joint, 40: Wiring pattern, 42: Wiring pattern,
44 wiring pattern, 46 through hole, 48
... Solder joint, 50 ... Solder joint, 52 ... Wiring pattern, 54 ... Through hole, 56 ... Solder joint, 5
8 terminals, 60 semiconductor device of the second embodiment, 62
…… Brand beer hole, 64 …… Intermediate board, 66 ……
Wiring pattern 70 Semiconductor device 7 of the third embodiment, 7
2. Wiring on the side of the substrate, 74 ... Wiring on the side of the substrate, 76 ...
Board side wiring, 78 ... terminal.

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 被実装素子を配線基板上に実装した第1
層の素子実装構造と、第1層の素子実装構造上に介在体
を介して設けられ、被実装素子を配線基板上に実装した
第2層の素子実装構造とを有する2層積層構造として構
成され、 被実装素子は、半導体素子と回路素子との少なくともい
ずれかで形成された回路を有する回路体、半導体素子、
及び回路素子のうちの少なくともいずれかであり、 配線基板は、被実装素子を実装させる配線パターンを両
面に有し、かつ両面の配線パターンの対応する配線同士
を接続させ、 介在体は、中央領域に空間部を、及び空間部の周辺の両
面に配線パターンをそれぞれ有する板状体であって、空
間部内に第1層の素子実装構造の被実装素子を収容し、
かつ、第1層及び第2層の素子実装構造の配線基板に、
それぞれ、配線パターン同士の接続によって電気的及び
機械的に接続にされていることを特徴とする半導体装
置。
A first device in which a device to be mounted is mounted on a wiring board.
A two-layer laminated structure having a two-layer element mounting structure in which a layered element mounting structure and a second layer element mounting structure in which an element to be mounted is mounted on a wiring board and provided on the first layer element mounting structure with an interposed body therebetween The mounted element is a circuit having a circuit formed by at least one of a semiconductor element and a circuit element, a semiconductor element,
And a circuit element, wherein the wiring board has a wiring pattern for mounting the mounted element on both sides, and connects the corresponding wirings of the wiring patterns on both sides, and the intermediate body is a central region. A space portion, and a plate-shaped body having a wiring pattern on both surfaces around the space portion, wherein the mounted element of the element mounting structure of the first layer is accommodated in the space portion,
In addition, the wiring board of the element mounting structure of the first layer and the second layer,
A semiconductor device characterized by being electrically and mechanically connected by connection of wiring patterns.
【請求項2】 第2層の素子実装構造上に、更に介在体
と素子実装構造とからなる積層構造を所定層数繰り返し
て備え、多層積層構造として構成されていることを特徴
とする請求項1に記載の半導体装置。
2. A multi-layer laminated structure comprising a second layer of an element mounting structure and a laminated structure composed of an intervening body and an element mounting structure repeatedly provided in a predetermined number of layers. 2. The semiconductor device according to 1.
【請求項3】 配線基板の両面に設けられた配線パター
ンは、両面の配線パターンの対応する配線が、基板を貫
通したスルーホールに設けた導線により相互に接続され
ていることを特徴とする請求項1又は2に記載の半導体
装置。
3. A wiring pattern provided on both sides of a wiring board, wherein wirings corresponding to the wiring patterns on both sides are connected to each other by conducting wires provided in through holes penetrating the board. Item 3. The semiconductor device according to item 1 or 2.
【請求項4】 配線基板の両面に設けられた配線パター
ンは、両面の配線パターンの対応する配線が、基板側面
に設けた側面配線により相互に接続されていることを特
徴とする請求項1又は2に記載の半導体装置。
4. A wiring pattern provided on both surfaces of a wiring board, wherein wirings corresponding to the wiring patterns on both surfaces are connected to each other by side wiring provided on a side surface of the substrate. 3. The semiconductor device according to 2.
【請求項5】 半導体素子と整合回路とが被実装素子と
して素子実装構造の配線基板上に実装されていることを
特徴とする請求項1に記載の半導体装置。
5. The semiconductor device according to claim 1, wherein the semiconductor element and the matching circuit are mounted as elements to be mounted on a wiring board having an element mounting structure.
【請求項6】 被実装素子がフリップチップ接続方式で
配線基板に実装されていることを特徴とする請求項1に
記載の半導体装置。
6. The semiconductor device according to claim 1, wherein the element to be mounted is mounted on a wiring board by a flip-chip connection method.
JP11101285A 1999-04-08 1999-04-08 Semiconductor device Pending JP2000294725A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11101285A JP2000294725A (en) 1999-04-08 1999-04-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11101285A JP2000294725A (en) 1999-04-08 1999-04-08 Semiconductor device

Publications (1)

Publication Number Publication Date
JP2000294725A true JP2000294725A (en) 2000-10-20

Family

ID=14296597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11101285A Pending JP2000294725A (en) 1999-04-08 1999-04-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JP2000294725A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086755A (en) * 2001-09-11 2003-03-20 Sony Corp Hybrid module
JP2007103750A (en) * 2005-10-06 2007-04-19 Murata Mfg Co Ltd Circuit module
US7696616B2 (en) 2005-01-31 2010-04-13 Spansion Llc Stacked type semiconductor device and method of fabricating stacked type semiconductor device
JP2010199611A (en) * 2006-04-27 2010-09-09 Sumitomo Bakelite Co Ltd Semiconductor device
US8841760B2 (en) 2012-04-10 2014-09-23 Shinko Electric Industries Co., Ltd. Stacked semiconductor device and method of manufacturing the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086755A (en) * 2001-09-11 2003-03-20 Sony Corp Hybrid module
US7696616B2 (en) 2005-01-31 2010-04-13 Spansion Llc Stacked type semiconductor device and method of fabricating stacked type semiconductor device
JP2007103750A (en) * 2005-10-06 2007-04-19 Murata Mfg Co Ltd Circuit module
JP2010199611A (en) * 2006-04-27 2010-09-09 Sumitomo Bakelite Co Ltd Semiconductor device
US8841760B2 (en) 2012-04-10 2014-09-23 Shinko Electric Industries Co., Ltd. Stacked semiconductor device and method of manufacturing the same

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