JP2000286451A5 - - Google Patents
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- Publication number
- JP2000286451A5 JP2000286451A5 JP2000060463A JP2000060463A JP2000286451A5 JP 2000286451 A5 JP2000286451 A5 JP 2000286451A5 JP 2000060463 A JP2000060463 A JP 2000060463A JP 2000060463 A JP2000060463 A JP 2000060463A JP 2000286451 A5 JP2000286451 A5 JP 2000286451A5
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- JP
- Japan
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Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32628198 | 1998-11-17 | ||
| JP10-326281 | 1999-01-29 | ||
| JP11-23049 | 1999-01-29 | ||
| JP2304999 | 1999-01-29 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11290999A Division JP3063757B1 (ja) | 1998-11-17 | 1999-04-20 | 窒化物半導体素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000286451A JP2000286451A (ja) | 2000-10-13 |
| JP2000286451A5 true JP2000286451A5 (enExample) | 2006-06-15 |
Family
ID=26360340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000060463A Pending JP2000286451A (ja) | 1998-11-17 | 2000-03-06 | 窒化物半導体素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000286451A (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030053290A (ko) * | 2001-12-22 | 2003-06-28 | 엘지이노텍 주식회사 | 질화물 반도체 소자 및 질화물 반도체 소자의 제조방법 |
| JP5162809B2 (ja) * | 2004-02-09 | 2013-03-13 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| TWI252599B (en) * | 2004-04-27 | 2006-04-01 | Showa Denko Kk | N-type group III nitride semiconductor layered structure |
| WO2005106979A1 (ja) * | 2004-04-28 | 2005-11-10 | Mitsubishi Cable Industries, Ltd. | 窒化物半導体発光素子 |
| US7339255B2 (en) * | 2004-08-24 | 2008-03-04 | Kabushiki Kaisha Toshiba | Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes |
| KR100670531B1 (ko) | 2004-08-26 | 2007-01-16 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| JP2008511154A (ja) | 2004-08-26 | 2008-04-10 | エルジー イノテック カンパニー リミテッド | 窒化物半導体発光素子及びその製造方法 |
| JP4853198B2 (ja) * | 2005-12-02 | 2012-01-11 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体発光素子 |
| KR100764433B1 (ko) | 2006-04-06 | 2007-10-05 | 삼성전기주식회사 | 질화물 반도체 소자 |
| JP5326225B2 (ja) * | 2006-05-29 | 2013-10-30 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
| EP1883141B1 (de) | 2006-07-27 | 2017-05-24 | OSRAM Opto Semiconductors GmbH | LD oder LED mit Übergitter-Mantelschicht |
| EP1883140B1 (de) * | 2006-07-27 | 2013-02-27 | OSRAM Opto Semiconductors GmbH | LD oder LED mit Übergitter-Mantelschicht und Dotierungsgradienten |
| CN102334204B (zh) | 2010-01-06 | 2013-11-20 | 松下电器产业株式会社 | 氮化物系半导体发光元件及其制造方法 |
| JP5885942B2 (ja) * | 2011-05-30 | 2016-03-16 | シャープ株式会社 | 窒化物半導体発光素子およびその製造方法 |
| US8669585B1 (en) | 2011-09-03 | 2014-03-11 | Toshiba Techno Center Inc. | LED that has bounding silicon-doped regions on either side of a strain release layer |
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2000
- 2000-03-06 JP JP2000060463A patent/JP2000286451A/ja active Pending