JP2000286443A5

JP2000286443A5 -

Info

Publication number: JP2000286443A5
Application number: JP1999089007A
Authority: JP
Filing date: 1999-03-30
Publication date: 2004-12-16
Anticipated expiration: 2019-03-30

Description

【００２０】
【課題を解決するための手段】
上記の課題を解決するために、本発明は、図５に示すように、半導体基板５１７上に設けられた第１導電型の第１エピタキシャル半導体領域５１９と、上記第１エピタキシャル半導体領域５１９内に設けられた第２導電型の第２半導体領域５０１、５０２、５０３と、上記第２半導体領域５０１、５０２、５０３上に設けられた第１導電型の第３半導体領域５２０と、上記第２半導体領域５０１、５０２、５０３に直接接続され、該第２半導体領域の電位を制御する電極領域５１１と、を有することを特徴とする。[0020]
[Means for Solving the Problems]
In order to solve the above-mentioned problems, as shown in FIG. 5, according to the present invention, a first epitaxial semiconductor region 519 of the first conductivity type provided on a semiconductor substrate 517 and the first epitaxial semiconductor region 519 are provided. A second semiconductor region 501, 502, 503 of the second conductivity type, a third semiconductor region 520 of the first conductivity type provided on the second semiconductor region 501, 502, 503, and the second semiconductor And the electrode region 511 which is directly connected to the regions 501, 502, and 503 and controls the potential of the second semiconductor region.

【００２５】
また、本発明は、受光素子と、上記受光素子をリセットするリセット手段と、上記受光素子に蓄積された電荷を電圧信号に変換する電荷−電圧変換手段と、を有する光電変換装置において、上記受光素子は、上記半導体基板上に設けられた第１導電型の第１エピタキシャル半導体領域と、上記第１エピタキシャル半導体領域内に設けられた第２導電型の第２半導体領域と、上記第２半導体領域上に設けられた第１導電型の第３半導体領域と、上記第２半導体領域に直接接続され、該第２半導体領域の電位を制御する電極領域と、を有し、上記光電変換装置の暗時、及び飽和出力時において、上記第１エピタキシャル半導体領域５１９と上記第３半導体領域５２０の間の上記第２半導体領域５０１、５０２、５０３が空乏化していることを特徴とする。[0025]
Further, the present invention includes a light-receiving element, and a reset means for resetting the light-receiving element, a charge converting the electric charge accumulated in the light receiving element into a voltage signal - in the photoelectric conversion device having a voltage converting means, and the light-receiving The device includes a first epitaxial semiconductor region of a first conductivity type provided on the semiconductor substrate, a second semiconductor region of a second conductivity type provided in the first epitaxial semiconductor region, and the second semiconductor region. A third semiconductor region of the first conductivity type provided thereon, and an electrode region directly connected to the second semiconductor region and controlling a potential of the second semiconductor region; At the time of saturation output, the second semiconductor regions 501, 502, 503 between the first epitaxial semiconductor region 519 and the third semiconductor region 520 are depleted. To.

Claims

A first epitaxial semiconductor region of a first conductivity type provided on a semiconductor substrate;
A second semiconductor region of a second conductivity type provided in the first epitaxial semiconductor region ;
A third semiconductor region of the first conductivity type provided on the second semiconductor region;
And an electrode region directly connected to the second semiconductor region to control the potential of the second semiconductor region.

The light receiving element according to claim 1, wherein the electrode region is a fourth semiconductor region of the second conductivity type, and has a wiring means electrically connected to the fourth semiconductor region.

The light receiving element has an opening defined by a light shielding layer,
The light receiving element according to claim 1 or 2, wherein at least a part of the second semiconductor region and the third semiconductor region is provided in the opening.

The light receiving element according to claim 1 or 2, wherein the semiconductor substrate is of a second conductivity type, and a fifth semiconductor region of a second conductivity type is provided around the first epitaxial semiconductor region.

The semiconductor substrate is of a first conductivity type, and has a sixth semiconductor region of a first conductivity type between the semiconductor substrate and the first epitaxial semiconductor region, and the impurity concentration of the sixth semiconductor region is the semiconductor substrate, The light receiving element according to claim 1, wherein the light receiving element is higher than the first epitaxial semiconductor region.

A light receiving element,
Reset means for resetting the light receiving element;
A photoelectric conversion device having charge-voltage conversion means for converting the charge accumulated in the light receiving element into a voltage signal;
The light receiving element is
A first epitaxial semiconductor region of a first conductivity type provided on the semiconductor substrate;
A second semiconductor region of a second conductivity type provided in the first epitaxial semiconductor region ;
A third semiconductor region of the first conductivity type provided on the second semiconductor region;
It is directly connected to the second semiconductor region having an electrode region for controlling the potential of said second semiconductor region, and
In the dark and saturated output of the photoelectric conversion device,
A photoelectric conversion device characterized in that the second semiconductor region between the first epitaxial semiconductor region and the third semiconductor region is depleted.

The light receiving element has an opening defined by a light shielding layer, and at least a part of the second semiconductor region and the third semiconductor region is provided in the opening. Photoelectric conversion device.

8. The photoelectric conversion device according to claim 6, wherein the semiconductor substrate is of a second conductivity type, and a fifth semiconductor region of a second conductivity type is provided around the first epitaxial semiconductor region.

The semiconductor substrate is of a first conductivity type, and has a sixth semiconductor region of a first conductivity type between the semiconductor substrate and the first epitaxial semiconductor region, and the impurity concentration of the sixth semiconductor region is the semiconductor substrate The photoelectric conversion device according to claim 6, wherein the photoelectric conversion device is higher than the first epitaxial semiconductor region.