JP2000268324A - Manufacture of magnetoresistance effect-head - Google Patents

Manufacture of magnetoresistance effect-head

Info

Publication number
JP2000268324A
JP2000268324A JP11072139A JP7213999A JP2000268324A JP 2000268324 A JP2000268324 A JP 2000268324A JP 11072139 A JP11072139 A JP 11072139A JP 7213999 A JP7213999 A JP 7213999A JP 2000268324 A JP2000268324 A JP 2000268324A
Authority
JP
Japan
Prior art keywords
grindstone
grinding
wafer
protective film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP11072139A
Other languages
Japanese (ja)
Inventor
Kaoru Yamakawa
薫 山川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11072139A priority Critical patent/JP2000268324A/en
Publication of JP2000268324A publication Critical patent/JP2000268324A/en
Withdrawn legal-status Critical Current

Links

Landscapes

  • Magnetic Heads (AREA)

Abstract

PROBLEM TO BE SOLVED: To grind a wafer with high accuracy and to enhance the production yield of a high-performance magnetoresistance effect element. SOLUTION: In this manufacturing method for a magnetoresistance effect head, respective layers which comprise a magnetoresistance effect film and a terminal part constituting the magnetoresistance effect-head are formed on a wafer 10, the whole face on the film formation face of the wafer 10 is then covered with a protective film, the protective film is ground and machined by a rotary whetstone 20 comprising a ring-shaped whetstone part 22, the end face of the terminal part is exposed, the end face of the terminal part and the surface of the protective film are formed to be flat faces, and the magnetoresistance effect head is formed. The grinding operation uses the whetstone 20 in which many grooves crossing the whetstone part 22 in the transverse direction are formed is used on a face on which a product to be worked, by the whetstone part 22 is ground.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は磁気ディスク装置に
おける情報の記録・再生に用いられる磁気抵抗効果型ヘ
ッドの製造方法に関し、より詳細には、磁気抵抗効果型
ヘッドを形成するウエハ工程での研削加工方法に関する
ものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a magnetoresistive head used for recording and reproducing information in a magnetic disk drive, and more particularly, to grinding in a wafer process for forming a magnetoresistive head. It relates to a processing method.

【0002】[0002]

【従来の技術】近年、磁気ディスク装置の小型化、大容
量化にともない、情報の記録・再生に用いられる磁気ヘ
ッドとして出力が周速に依存せず、高出力が得られる磁
気抵抗効果型ヘッドが注目されている。この磁気抵抗効
果型ヘッドの製造に際しては、セラミックウエハを基材
としてウエハの表面に磁気抵抗効果膜や所要の絶縁膜等
をパターン形成し多数個の素子を得ている。この磁気抵
抗効果膜等を形成するウエハ工程では、磁気抵抗効果膜
や端子、コイル等を形成した後、ウエハの表面全体をア
ルミナ等の保護膜によって被覆し、保護膜を研削して表
面を鏡面に加工する研削加工が施される。
2. Description of the Related Art In recent years, with the miniaturization and large-capacity of magnetic disk drives, magneto-resistive heads whose output does not depend on the peripheral speed and whose output is high can be obtained as a magnetic head used for recording and reproducing information. Is attracting attention. In manufacturing this magnetoresistive head, a large number of elements are obtained by patterning a magnetoresistive film or a required insulating film on the surface of a ceramic wafer as a base material. In the wafer process of forming the magnetoresistive film, etc., after forming the magnetoresistive film, terminals, coils, etc., the entire surface of the wafer is covered with a protective film such as alumina, and the protective film is ground and the surface is mirror-finished. Grinding is performed.

【0003】アルミナ等の保護膜の膜厚は60μm程度
であり、保護膜の下地部分で最も肉厚な端子部の厚さは
50μm程度である。研削行程で保護膜を研削する加工
は、端子部の端面を露出させる目的と、端子部の端面と
保護膜の表面を鏡面の平坦面に加工することにある。通
常、端子部は銅を成膜して形成されているから、保護膜
の研削工程ではアルミナ等の保護膜を研削していき、端
子部が露出したところで研削を停止させるようにする。
この研削工程では、一般的な回転砥石を用いた研削装置
が使用される。
The thickness of a protective film made of alumina or the like is about 60 μm, and the thickness of the thickest terminal portion under the protective film is about 50 μm. The process of grinding the protective film in the grinding step is to expose the end face of the terminal portion and to process the end face of the terminal portion and the surface of the protective film into a flat mirror surface. Usually, since the terminal portion is formed by depositing copper, the protective film such as alumina is ground in the protective film grinding step, and the grinding is stopped when the terminal portion is exposed.
In this grinding step, a grinding device using a general rotating grindstone is used.

【0004】[0004]

【発明が解決しようとする課題】ところで、上記のウエ
ハ工程の研削加工で使用している砥石には、ワーク表面
に接する砥石部が200mm程度の径寸法を有する筒形
に形成され、砥石の表面にダイヤモンドを使用したダイ
ヤモンドカップホイールが使用されている。しかしなが
ら、この従来の砥石は、研削時に砥石の表面がワークの
表面に密着しているため、砥石の表面とワークの表面と
の間を通過する研削液の量が制限され、所望の面精度が
得られないという問題点があった。
The grindstone used in the above-mentioned grinding process in the wafer process has a grindstone portion in contact with the surface of the work in a cylindrical shape having a diameter of about 200 mm. A diamond cup wheel using diamond is used. However, in this conventional whetstone, since the surface of the whetstone is in close contact with the surface of the work at the time of grinding, the amount of the grinding fluid passing between the whetstone surface and the work surface is limited, and the desired surface accuracy is reduced. There was a problem that it could not be obtained.

【0005】研削加工、とくにワークの表面の面粗度を
できるだけ上げる鏡面研削加工を施すには、砥石の表面
と被加工面であるワークの表面との間に研削液(水溶性
の切削液を水で希釈した液)を効率的に供給することが
必要である。従来のダイヤモンドカップホイールは砥石
の表面を単なる平坦面に形成しているため、研削液が効
率的に供給されず、所望の面精度が得られるない。本発
明は、これらの従来の問題点を解消すべくなされたもの
であり、ウエハの研削工程で使用する砥石の形状を改善
することによって、きわめて高精度の鏡面研削加工を可
能にし、高性能の磁気抵抗効果素子を歩留まりよく製造
することができる磁気抵抗効果素子の製造方法を提供す
ることを目的とする。
In order to perform a grinding process, particularly a mirror surface grinding process for maximizing the surface roughness of the work surface, a grinding fluid (a water-soluble cutting fluid) is applied between the surface of the grindstone and the surface of the work to be processed. (A solution diluted with water) must be supplied efficiently. In the conventional diamond cup wheel, since the surface of the grindstone is simply formed as a flat surface, the grinding fluid is not efficiently supplied, and a desired surface accuracy cannot be obtained. The present invention has been made to solve these conventional problems. By improving the shape of a grindstone used in a wafer grinding process, it is possible to perform extremely high-precision mirror surface grinding and achieve high performance. It is an object of the present invention to provide a method of manufacturing a magnetoresistive element capable of manufacturing a magnetoresistive element with high yield.

【0006】[0006]

【課題を解決するための手段】本発明は、上記目的を達
成するため次の構成を備える。すなわち、ウエハ上に磁
気抵抗効果型ヘッドを構成する磁気抵抗効果膜及び端子
部を含む各層を成膜した後、ウエハの成膜面の全面を保
護膜により被覆し、該保護膜をリング状の砥石部を有す
る回転式の砥石を用いて研削加工して前記端子部の端面
を露出するとともに、該端子部の端面及び保護膜の表面
を平坦面に形成して磁気抵抗効果型ヘッドを形成する磁
気抵抗効果型ヘッドの製造方法において、前記研削加工
の際に、砥石部の被加工品を研削する面に砥石部を幅方
向に横切る溝を周方向に多数個設けた砥石を使用するこ
とを特徴とする。また、砥石部の内周側よりも外周側を
幅広に形成した溝を形成した砥石を使用することは、砥
石部の内側から外側に向けての研削液を通流を良好にす
るという利点がある。また、砥石部の径方向に対し、外
周側を砥石の回転方向に向け、砥石部の径方向に対し接
線方向に傾斜させた溝が設けられた砥石を使用して研削
加工することは、砥石部の内外向きの研削液の通流を良
好にする点で有効である。
The present invention has the following arrangement to achieve the above object. That is, after forming each layer including the magnetoresistive effect film and the terminal portion constituting the magnetoresistive head on the wafer, the entire surface of the film formation surface of the wafer is covered with a protective film, and the protective film is formed in a ring shape. Grinding using a rotary grindstone having a grindstone portion to expose the end surface of the terminal portion, and forming the end surface of the terminal portion and the surface of the protective film on a flat surface to form a magnetoresistive head. In the method of manufacturing a magnetoresistive head, during the grinding, using a grindstone provided with a large number of circumferentially provided grooves crossing the grindstone portion in a width direction on a surface of the grindstone portion on which a workpiece is ground. Features. In addition, the use of a grindstone having a groove formed so that the outer peripheral side is wider than the inner peripheral side of the grindstone portion has an advantage that the flow of the grinding fluid from the inside to the outside of the grindstone portion is improved. is there. In addition, grinding with a grindstone provided with a groove inclined in the tangential direction with respect to the radial direction of the grindstone portion, with the outer peripheral side facing the rotation direction of the grindstone with respect to the radial direction of the grindstone portion, is not a grinding stone. This is effective in improving the flow of the grinding fluid in and out of the portion.

【0007】[0007]

【発明の実施の形態】以下、本発明の好適な実施形態に
ついて、添付図面と共に詳細に説明する。図1は磁気抵
抗効果型ヘッドの製造方法において、被加工品である成
膜後のウエハ10を研削する研削装置の概略構成を示
す。ウエハ10は真空チャック12により成膜面を外向
きにして平坦面となるよう矯正されて真空吸着され、真
空吸着された状態で真空チャック12とともに中心線の
回りに回転駆動される。一方、砥石20はウエハ10の
被加工面(成膜面)に砥石部22を向けてウエハ10の
上方にセットされる。
Preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 shows a schematic configuration of a grinding apparatus for grinding a film-formed wafer 10 as a workpiece in a method of manufacturing a magnetoresistive head. The wafer 10 is corrected by a vacuum chuck 12 so that the film-forming surface faces outward and becomes a flat surface, is vacuum-sucked, and is rotated around the center line together with the vacuum chuck 12 in the vacuum-sucked state. On the other hand, the grindstone 20 is set above the wafer 10 with the grindstone portion 22 facing the processing surface (film formation surface) of the wafer 10.

【0008】砥石20は金属製の円形の台板24にリン
グ状(筒形)の砥石部22を取り付けたものであり、砥
石20を中心線の回りで高速回転する回転機構に取り付
けられている。図1に示すように、ウエハ10の表面に
対し砥石20の回転面を平行にし、ウエハ10と砥石2
0を共に回転して、研削液30を供給しながらウエハ1
0の表面に砥石20を接触させて研削する。32は研削
液を供給するノズルである。なお、実施形態ではウエハ
10と砥石20とは中心位置を偏位させた配置としてい
る。
The grindstone 20 has a ring-shaped (cylindrical) grindstone portion 22 attached to a metal circular base plate 24, and is attached to a rotating mechanism that rotates the grindstone 20 at high speed around a center line. . As shown in FIG. 1, the rotating surface of the grindstone 20 is made parallel to the surface of the
0 while rotating the wafer 1 while supplying the grinding fluid 30.
Grinding is performed by bringing the grindstone 20 into contact with the surface of No. 0. 32 is a nozzle for supplying a grinding fluid. In the embodiment, the wafer 10 and the grindstone 20 are arranged so that their center positions are deviated.

【0009】被加工品のウエハ10は所要の磁気抵抗効
果膜を形成し、端子部及びコイル等を成膜して形成した
ものであり、保護膜としてアルミナをウエハ10の成膜
面の全面に施したものである。この研削加工工程では、
ウエハ10の成膜面を砥石20により鏡面研削して銅端
子部を露出させるとともに、アルミナの保護膜及び端子
部の露出面を平坦な鏡面に研削する。
The wafer 10 to be processed is formed by forming a required magnetoresistive film, forming terminals and coils, etc., and forming alumina as a protective film on the entire surface of the film forming surface of the wafer 10. It was done. In this grinding process,
The film forming surface of the wafer 10 is mirror-polished with a grindstone 20 to expose the copper terminal portion, and the protective film of alumina and the exposed surface of the terminal portion are ground to a flat mirror surface.

【0010】本実施形態の研削加工で特徴とする構成は
ウエハ10を研削加工する砥石20の構成にあり、被加
工品に押接される砥石部22の表面に溝を設けて研削液
30の供給、流通が効率的になされるようにした点にあ
る。図2は、砥石20の平面図を示す。砥石20は金属
板を使用して円板状に形成した台板24にリング状に砥
石部22を取り付けたものである。本実施形態で使用し
た台板24は外径寸法200mmのものである。砥石部
22は台板24よりも外径寸法を若干小さく設定し、幅
寸法3mmに形成している。
The feature of the grinding process according to the present embodiment lies in the configuration of the grindstone 20 for grinding the wafer 10. A groove is formed on the surface of the grindstone portion 22 that is pressed against the workpiece to form the grinding fluid 30. The point is that supply and distribution are performed efficiently. FIG. 2 shows a plan view of the grindstone 20. The grindstone 20 is obtained by attaching a grindstone portion 22 in a ring shape to a base plate 24 formed in a disk shape using a metal plate. The base plate 24 used in the present embodiment has an outer diameter of 200 mm. The outer diameter of the grindstone portion 22 is set slightly smaller than that of the base plate 24, and is formed to have a width of 3 mm.

【0011】砥石部22は研削用のダイヤモンドを研削
材として固着材に練り込んで形成したものである。本実
施形態では、このリング状に形成した砥石部22に、砥
石部22を幅方向に横切る溝22aを周方向に所定間隔
をあけて多数個設けている(図は説明上、砥石部22の
一部に溝22aを設けた状態である)。本実施形態で砥
石部22に設けた溝22aは、外周側を砥石20の回転
方向に向け、砥石部22の円弧に対する径方向に対して
約45°接線方向に傾斜させて設けている。溝22aの
向きを径方向から傾斜させているのは、砥石部22の内
外で研削液30が通流しやすくするためである。図の矢
印方向に砥石20が回転した場合、溝22aを図のよう
に傾斜させておけば砥石20の回転により溝22a内に
研削液30が入り込みやすくなり、砥石部22の内外で
研削液30が移動しやすくなる。
The grinding wheel portion 22 is formed by kneading a diamond for grinding as a grinding material into a fixing material. In the present embodiment, the ring-shaped grindstone portion 22 is provided with a large number of grooves 22a crossing the grindstone portion 22 in the width direction at predetermined intervals in the circumferential direction. The groove 22a is partially provided). The groove 22a provided in the grindstone portion 22 in the present embodiment is provided so that its outer peripheral side is directed in the rotation direction of the grindstone 20 and is inclined at about 45 ° tangential to the radial direction of the grindstone portion 22 with respect to the arc. The reason why the direction of the groove 22a is inclined from the radial direction is to make it easier for the grinding fluid 30 to flow inside and outside the grindstone portion 22. When the grindstone 20 rotates in the direction of the arrow in the figure, if the groove 22a is inclined as shown in the figure, the rotation of the grindstone 20 makes it easier for the grinding fluid 30 to enter the groove 22a. Becomes easier to move.

【0012】図2のように、溝22aを傾斜させた配置
は、砥石部22の内側から研削液30を供給して研削す
る場合でも、図1に示すように砥石部22の外側から研
削液30を供給して研削する場合でも、砥石部22を通
って研削液30を通流しやすくさせることができるとい
う作用効果を奏する。研削液30を砥石部22の内外で
通流しやすくすることは、効率的で確実な研削を可能と
し、面精度を確実に向上させることを可能にする。
As shown in FIG. 2, the arrangement in which the grooves 22a are inclined is not limited to the case where the grinding fluid 30 is supplied from the inside of the grindstone portion 22 and the grinding fluid is supplied from the outside of the grindstone portion 22 as shown in FIG. Even in the case where the grinding liquid 30 is supplied and the grinding is performed, there is an operational effect that the grinding fluid 30 can easily flow through the grinding stone portion 22. Making the grinding fluid 30 flow easily inside and outside the grindstone portion 22 enables efficient and reliable grinding and reliably improves the surface accuracy.

【0013】図3は、砥石部22に溝を設けた他の例を
示す。この実施形態の砥石20は、砥石部22の円弧の
径方向に溝22bを配置し、溝22bの形状を内周側よ
りも外周側を広幅に形成したことを特徴とする。実施形
態では、溝22bの形状を内周側が2mm、外周側が3
mmの幅とした。このように、溝22bの形状を内周側
の幅を狭く外周側を広くするのは、砥石部22の内側に
研削液30を供給して研削加工する場合に、砥石部22
の内側から外側へ研削液30を通流しやすくさせるため
である。
FIG. 3 shows another example in which a groove is provided in the grindstone portion 22. The grindstone 20 of this embodiment is characterized in that the grooves 22b are arranged in the radial direction of the arc of the grindstone portion 22, and the shape of the grooves 22b is formed wider on the outer peripheral side than on the inner peripheral side. In the embodiment, the shape of the groove 22b is 2 mm on the inner peripheral side and 3 mm on the outer peripheral side.
mm width. The reason why the shape of the groove 22b is made narrower on the inner peripheral side and wider on the outer peripheral side is that when the grinding liquid 30 is supplied to the inside of the grindstone portion 22 to perform the grinding, the grindstone portion 22 is formed.
This is to make it easier for the grinding fluid 30 to flow from the inside to the outside.

【0014】砥石20を回転させた際に砥石部22を通
って研削液30を通流させやすくすることは、砥石20
によって被加工品を研削している部分で研削液30が滞
留することを防止し、研削液とともに研削物が排出され
やすくして、効率的で確実な研削を可能にするという大
きな効果がある。また、研削液30が通流されやすいこ
とから、新たな研削液30が研削部位に次々と供給さ
れ、確実な研削がなされて、研削面の面精度を効果的に
向上させることが可能になる。
To facilitate the flow of the grinding fluid 30 through the grindstone portion 22 when the grindstone 20 is rotated,
Accordingly, there is a great effect that the grinding fluid 30 is prevented from staying in a portion where the workpiece is being ground, and the ground material is easily discharged together with the grinding fluid, thereby enabling efficient and reliable grinding. Further, since the grinding fluid 30 is easily passed, new grinding fluid 30 is supplied to the grinding portion one after another, and reliable grinding is performed, so that the surface accuracy of the ground surface can be effectively improved. .

【0015】砥石部22は使用とともに減っていくが溝
22a、22bが残っている状態であれば有効な作用効
果を得ることができる。なお、溝22a、22bの形
状、寸法、深さ等は砥石部22の大きさや幅、被加工品
の大きさ、材質等によって適宜選択可能であり、上記実
施形態の寸法、形状等に限定されるものではない。
The grindstone portion 22 decreases with use, but if the grooves 22a and 22b remain, an effective operation and effect can be obtained. The shape, size, depth and the like of the grooves 22a and 22b can be appropriately selected depending on the size and width of the grindstone portion 22, the size and material of the workpiece, and are limited to the size, shape and the like of the above embodiment. Not something.

【0016】また、上記研削加工方法は磁気抵抗効果素
子等のように、きわめて高精度の加工を必要とするもの
に使用して好適である。とくに、磁気抵抗効果素子の製
造に使用するウエハは下地に複雑な凹凸形状が形成され
ているから、保護膜としてアルミナを被覆して研削加工
を施した際に下地の凹凸面に影響されることなく確実に
研削できることが重要である。通常、この研削加工後
に、仕上げ加工として研磨加工が施されるが、研磨加工
では研削加工時の面精度が仕上げ精度に影響されるし下
地の凹凸の影響も受ける。したがって、研削加工で高度
の面精度に加工することはきわめて重要である。その
点、上記実施形態の砥石20を用いた研削加工は研削面
精度が良好であり、場合によっては仕上げの研磨加工を
不要として、研削、研磨加工効率を向上させ、かつ信頼
性の高い磁気抵抗効果素子を得ることを可能にする。
The above-mentioned grinding method is suitable for use in a device requiring extremely high precision processing, such as a magnetoresistive element. In particular, since the wafer used for the manufacture of the magnetoresistive element has a complicated uneven shape on the underlayer, it may be affected by the uneven surface of the underlayer when grinding with alumina as a protective film. It is important that grinding can be performed without any problems. Usually, after this grinding process, a polishing process is performed as a finishing process. In the polishing process, the surface accuracy at the time of the grinding process is affected by the finishing accuracy and also by the unevenness of the base. Therefore, it is extremely important to perform a high degree of surface precision by grinding. In this regard, the grinding using the grindstone 20 of the above embodiment has a good grinding surface accuracy, and in some cases eliminates the need for finishing polishing, thereby improving grinding and polishing efficiency, and providing a highly reliable magnetoresistance. It is possible to obtain an effect element.

【0017】[0017]

【発明の効果】本発明に係る磁気抵抗効果素子の製造方
法によれば、上述したように、保護膜によって磁気抵抗
効果膜等が被覆されたウエハの研削加工を確実にかつ効
率的に行うことが可能になり、磁気抵抗効果素子の製造
歩留まりを向上させることができ、磁気抵抗効果素子の
高性能化に対応できる信頼性の高い製品を製造すること
を可能にする。
According to the method of manufacturing a magnetoresistive element according to the present invention, as described above, it is possible to reliably and efficiently grind a wafer having a magnetoresistive film covered with a protective film. This makes it possible to improve the production yield of the magnetoresistive element, and to manufacture a highly reliable product that can respond to high performance of the magnetoresistive element.

【図面の簡単な説明】[Brief description of the drawings]

【図1】砥石を用いてウエハを研削加工する方法を示す
説明図である。
FIG. 1 is an explanatory diagram showing a method of grinding a wafer using a grindstone.

【図2】研削加工に用いる砥石の例を示す平面図であ
る。
FIG. 2 is a plan view showing an example of a grindstone used for grinding.

【図3】研削加工に用いる砥石の他の例を示す平面図で
ある。
FIG. 3 is a plan view showing another example of a grindstone used for grinding.

【符号の説明】[Explanation of symbols]

10 ウエハ 12 真空チャック 20 砥石 22 砥石部 22a、22b 溝 24 台板 30 研削液 32 ノズル DESCRIPTION OF SYMBOLS 10 Wafer 12 Vacuum chuck 20 Grindstone 22 Grindstone part 22a, 22b Groove 24 Base plate 30 Grinding liquid 32 Nozzle

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 ウエハ上に磁気抵抗効果型ヘッドを構成
する磁気抵抗効果膜及び端子部を含む各層を成膜した
後、ウエハの成膜面の全面を保護膜により被覆し、該保
護膜をリング状の砥石部を有する回転式の砥石を用いて
研削加工して前記端子部の端面を露出するとともに、該
端子部の端面及び保護膜の表面を平坦面に形成して磁気
抵抗効果型ヘッドを形成する磁気抵抗効果型ヘッドの製
造方法において、 前記研削加工の際に、砥石部の被加工品を研削する面に
砥石部を幅方向に横切る溝を周方向に多数個設けた砥石
を使用することを特徴とする磁気抵抗効果型ヘッドの製
造方法。
After forming a layer including a magnetoresistive film and a terminal portion constituting a magnetoresistive head on a wafer, a whole surface of a film forming surface of the wafer is covered with a protective film. Grinding using a rotary grindstone having a ring-shaped grindstone portion to expose the end surface of the terminal portion, and forming the end surface of the terminal portion and the surface of the protective film on a flat surface to form a magnetoresistive head In the method of manufacturing a magnetoresistive head, a grindstone provided with a plurality of circumferentially provided grooves crossing the grindstone portion in a width direction on a surface of the grindstone portion on which a workpiece is ground is used in the grinding process. A method of manufacturing a magnetoresistive head.
【請求項2】 砥石部の内周側よりも外周側を幅広に形
成した溝を形成した砥石を使用することを特徴とする請
求項1記載の磁気抵抗効果型ヘッドの製造方法。
2. The method for manufacturing a magnetoresistive head according to claim 1, wherein a grindstone having a groove formed on the outer peripheral side wider than the inner peripheral side of the grindstone portion is used.
【請求項3】 砥石部の径方向に対し、外周側を砥石の
回転方向に向け、砥石部の径方向に対し接線方向に傾斜
させた溝が設けられた砥石を使用して研削加工すること
を特徴とする請求項1記載の磁気抵抗効果型ヘッドの製
造方法。
3. Grinding using a grindstone provided with a groove inclined in a tangential direction with respect to the radial direction of the grindstone portion, with the outer peripheral side facing the rotation direction of the grindstone with respect to the radial direction of the grindstone portion. The method for manufacturing a magnetoresistive head according to claim 1, wherein:
JP11072139A 1999-03-17 1999-03-17 Manufacture of magnetoresistance effect-head Withdrawn JP2000268324A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11072139A JP2000268324A (en) 1999-03-17 1999-03-17 Manufacture of magnetoresistance effect-head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11072139A JP2000268324A (en) 1999-03-17 1999-03-17 Manufacture of magnetoresistance effect-head

Publications (1)

Publication Number Publication Date
JP2000268324A true JP2000268324A (en) 2000-09-29

Family

ID=13480668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11072139A Withdrawn JP2000268324A (en) 1999-03-17 1999-03-17 Manufacture of magnetoresistance effect-head

Country Status (1)

Country Link
JP (1) JP2000268324A (en)

Similar Documents

Publication Publication Date Title
US5297364A (en) Polishing pad with controlled abrasion rate
KR20000035238A (en) Flattening polishing device and flattening polishing method
JP2000173961A (en) Method and apparatus for manufacturing semiconductor device
JP4892201B2 (en) Method and apparatus for processing step of outer peripheral edge of bonded workpiece
KR100546355B1 (en) Chemical mechanical polishing apparatus having insert pad for forming local step
JP2004079009A5 (en)
US20010029158A1 (en) Polishing apparatus and polishing method, and method of manufacturing semiconductor device and method of manufacturing thin film magnetic head
JP2000268324A (en) Manufacture of magnetoresistance effect-head
JP4144725B2 (en) Glass substrate chamfering method and apparatus
JPH1177515A (en) Surface polishing device and abrasive cloth used for polishing device
JPH1133918A (en) Grinding wheel for working inside and outside diameter of substrate for magnetic recording medium, and method for working inside and outside diameter
JPS61172220A (en) Production of disk substrate
JP2678416B2 (en) Method and apparatus for manufacturing magnetic recording medium substrate
JPH02180554A (en) Method and device for notch grinding of semiconductor wafer
JP2001232558A (en) Polishing method
JP2001191238A (en) Chamfering method for disc-like work, grinding wheel for chamfering and chamfering device
JPH02301135A (en) Method for polishing wafer chamfer
JPH0523959A (en) Mirror grinding method and device of work edge
JP2010221305A (en) Manufacturing method of disk-shaped substrate
JPH04364729A (en) Apparatus for chamfering wafer notch
JPS61226272A (en) Grindstone for wafer grinding
JP2000082203A (en) Production of magnetic head
JP2002066922A (en) Dressing method and dresser of grinding surface of grinding wheel
JPH06114620A (en) Grinding wheel and method for processing disc using the same
JP2002301645A (en) Grinding device

Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20060606