JP2000267281A5 - - Google Patents

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JP2000267281A5
JP2000267281A5 JP1999070373A JP7037399A JP2000267281A5 JP 2000267281 A5 JP2000267281 A5 JP 2000267281A5 JP 1999070373 A JP1999070373 A JP 1999070373A JP 7037399 A JP7037399 A JP 7037399A JP 2000267281 A5 JP2000267281 A5 JP 2000267281A5
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group
hydrogen atom
substituent
alkyl group
photoresist composition
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JP1999070373A
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JP3901379B2 (en
JP2000267281A (en
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Claims (6)

(a)下記一般式(I)、(II)及び(III) で表される構造単位を有する共重合体Aと、(b)活性光線又は放射線の照射により酸を発生する化合物、及び(c)溶剤を含有することを特徴とするポジ型フォトレジスト組成物。
Figure 2000267281
一般式(I)〜(III) 中、R1 及びR2 は、同一でも異なっていてもよく、水素原子又はメチル基、R3 は置換されてもよい3級アルキル基を表す。
一般式(III)中、R'1、R'2は、同一でも異なっていてもよく、水素原子、又は炭素数1〜4のアルキル基を表し、Wは2価の有機基を表し、R'3は、置換基を有してもよい鎖状アルキル基、置換基を有してもよい環状アルキル基、置換基を有してもよいアリール基、又は置換基を有してもよいアラルキル基を表す。
(A) a copolymer A having structural units represented by the following general formulas (I), (II) and (III), (b) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and (c) ) A positive photoresist composition comprising a solvent.
Figure 2000267281
In general formulas (I) to (III), R 1 and R 2 may be the same or different, each represents a hydrogen atom or a methyl group, and R 3 represents a tertiary alkyl group that may be substituted.
In general formula (III), R ′ 1 and R ′ 2 may be the same or different and each represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, W represents a divalent organic group, R ' 3 is a chain alkyl group that may have a substituent, a cyclic alkyl group that may have a substituent, an aryl group that may have a substituent, or an aralkyl that may have a substituent Represents a group.
一般式(III)のR'3が、総炭素数11〜30の置換基を有してもよいアリール基、又は総炭素数12〜30の置換基を有してもよいアラルキル基であることを特徴とする請求項1に記載のポジ型フォトレジスト組成物。R ′ 3 in the general formula (III) is an aryl group which may have a substituent having a total carbon number of 11 to 30 or an aralkyl group which may have a substituent of a total carbon number of 12 to 30. The positive photoresist composition according to claim 1, wherein: 前記(a)の共重合体Aが、更に下記一般式(IV)で表される構造単位を含有することを特徴とする請求項1又は2に記載のポジ型フォトレジスト組成物。
Figure 2000267281
式中、R1は水素原子又はメチル基である。Rは、水素原子、炭素数1〜4の直鎖、分岐アルキル基、メトキシ基、又はアセトキシ基を表す。
The positive photoresist composition according to claim 1 or 2, wherein the copolymer A of (a) further contains a structural unit represented by the following general formula (IV).
Figure 2000267281
In the formula, R 1 is a hydrogen atom or a methyl group. R represents a hydrogen atom, a straight chain having 1 to 4 carbon atoms, a branched alkyl group, a methoxy group, or an acetoxy group.
前記(a)の共重合体Aが、更に下記一般式(V)で表される構造単位を含有することを特徴とする請求項1〜3のいずれかに記載のポジ型フォトレジスト組成物。
Figure 2000267281
式中、R1は水素原子又はメチル基である。
4 〜R8は、同一でも異なっていてもよく、水素原子、水酸基、炭素数1〜8の直鎖、分岐あるいはは環状アルキル基、炭素数1〜4のアルコキシ基、又はハロゲン原子を表す。
mは1〜6の整数を示す。
The positive photoresist composition according to claim 1, wherein the copolymer A of (a) further contains a structural unit represented by the following general formula (V).
Figure 2000267281
In the formula, R 1 is a hydrogen atom or a methyl group.
R 4 to R 8 may be the same or different and each represents a hydrogen atom, a hydroxyl group, a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, or a halogen atom. .
m shows the integer of 1-6.
前記(b)活性光線又は放射線の照射により酸を発生する化合物が、下記一般式(VI)で示されるスルホニウム塩の少なくとも1種であることを特徴とする請求項1〜4のいずれかに記載のポジ型フォトレジスト組成物。
Figure 2000267281
式中、3個のR9は、同一でも異なっていてもよく、水素原子、又は炭素数3〜16の分岐アルキル基を示す。但し、少なくとも1つは水素原子でない。
The said (b) compound which generate | occur | produces an acid by irradiation of actinic light or a radiation is at least 1 sort (s) of the sulfonium salt shown by the following general formula (VI), The Claim 1 characterized by the above-mentioned. A positive photoresist composition.
Figure 2000267281
In the formula, three R 9 s may be the same or different and each represents a hydrogen atom or a branched alkyl group having 3 to 16 carbon atoms. However, at least one is not a hydrogen atom.
請求項1〜5のいずれかに記載のポジ型フォトレジスト組成物によりレジスト膜を形成し、当該レジスト膜を露光、現像することを特徴とするパターン形成A resist film is formed with the positive photoresist composition according to claim 1, and the resist film is exposed and developed.
方法。Method.
JP07037399A 1999-03-16 1999-03-16 Positive photoresist composition Expired - Fee Related JP3901379B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP07037399A JP3901379B2 (en) 1999-03-16 1999-03-16 Positive photoresist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07037399A JP3901379B2 (en) 1999-03-16 1999-03-16 Positive photoresist composition

Publications (3)

Publication Number Publication Date
JP2000267281A JP2000267281A (en) 2000-09-29
JP2000267281A5 true JP2000267281A5 (en) 2005-07-07
JP3901379B2 JP3901379B2 (en) 2007-04-04

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JP07037399A Expired - Fee Related JP3901379B2 (en) 1999-03-16 1999-03-16 Positive photoresist composition

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100830868B1 (en) 2006-08-10 2008-05-21 주식회사 동진쎄미켐 Photosensitive polymer and photoresist composition including the same for Extreme UV and Deep UV

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