JP2000267130A - Active matrix type liquid crystal display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an active matrix type liquid crystal display device having high display quality. SOLUTION: Each pixel electrode 51 is at least partly superimposed on a signal line, and is also connected with the signal line and a scanning line via a TFT 18. From an extending auxiliary capacitance line 52 orthogonal to the signal line, plural shield electrodes 53 with a shielding effect are staying and each of them is extending along the signal line. Each shield electrode has a 1st part 53 which is arranged to be superimposed on the side edge part of one of the two adjoining pixel electrodes and only on one side edge part of the signal line, on one pixel electrode side, and a 2nd part which is arranged to be superimposed on the side edge of the other pixel electrode and only on the other side edge part of the signal line, on one pixel electrode side, and the superimposing width of the shield electrode and the pixel electrode is wider than that of the signal line and the pixel electrode.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix type liquid crystal display device having a display pixel electrode using a thin film transistor as a switching element.

[0002]

2. Description of the Related Art In recent years, while having a high density and a large capacity,
Practical use of liquid crystal display devices capable of obtaining high-performance and high-definition display has been promoted. There are various types of this liquid crystal display device. Among them, crosstalk between adjacent pixels is small,
Active matrix type liquid crystal display devices are often used because high contrast image display is obtained, transmission type display is possible, and the area can be easily increased.

In general, an active matrix type liquid crystal display device has an array substrate, which is divided into a plurality of regions defined by a plurality of scanning lines and a plurality of signal lines provided in directions intersecting each other. It has pixel electrodes provided in a matrix, and each pixel electrode is connected to a scanning line and a signal line via a thin film transistor (hereinafter, referred to as a TFT) functioning as a switching element.

[0004] The display quality of such a TFT liquid crystal display device depends on the parasitic capacitance between the signal line and the pixel electrode. The influence of this parasitic capacitance is to form an auxiliary capacitance or to fix it to a constant potential. This can be suppressed by arranging the shielded electrode so as to overlap the pixel electrode and the signal line via the interlayer insulating film.

However, in order to form an auxiliary capacitor and suppress the influence of the parasitic capacitance, a large auxiliary capacitor is required, which causes a decrease in the aperture ratio of the liquid crystal display device.
Further, when the shield electrode is formed, there is a problem that the load capacity of the signal line increases and the driving load of the built-in circuit increases.

[0006]

Therefore, the present inventors have proposed a configuration which solves the above-mentioned problems by forming a light-shielding layer by a signal line and a shield electrode. However, in the liquid crystal display device having such a configuration, when observing a screen obliquely from the left and right directions,
There is a new problem that light leaks and the contrast is reduced.

The present invention has been made in view of such a problem, and an object of the present invention is to provide an active matrix type liquid crystal display device having high display quality.

[0008]

In order to achieve the above object, an active matrix type liquid crystal display device according to the present invention comprises first and second substrates which are arranged opposite to each other with a liquid crystal layer interposed therebetween. One substrate includes a plurality of scanning lines provided substantially in parallel on an insulating substrate, a plurality of signal lines provided on the scanning lines via an insulating film so as to intersect the scanning lines, At least a part is provided in a region surrounded by the signal line, at least a part of the signal line overlaps with the signal line, and is connected to an intersection of the signal line and the scanning line via a switching element, and is higher than the signal line. And a plurality of pixel electrodes formed in a direction substantially perpendicular to the signal line, and provided between the scanning lines adjacent to each other, and formed in a lower layer than the signal line. And a co capacitor line, and a, a plurality of shield electrode having an electrostatic shielding formed along the signal line extending from each of the auxiliary capacitance line.

Each shield electrode formed along the signal line is connected to one of two adjacent pixel electrodes, one of the side edges of one pixel electrode and the other of the side edges of the signal line. Of the first portion provided so as to overlap only the side edge on the pixel electrode side, the side edge of the other pixel electrode, and the side edge of the signal line, only the side edge on the other pixel electrode side And a second portion provided in an overlapping manner, wherein an overlap width of the shield electrode and the pixel electrode is larger than an overlap width of the signal line and the pixel electrode.

Further, an active matrix type liquid crystal display device according to the present invention includes first and second substrates which are arranged to face each other with a liquid crystal layer interposed therebetween, and the first substrate is provided substantially in parallel on an insulating substrate. A plurality of scanning lines, a plurality of signal lines provided on the scanning lines via an insulating film so as to intersect with the scanning lines, and at least one of a plurality of signal lines provided in a region surrounded by the scanning lines and the signal lines. A plurality of pixel electrodes overlapped with the signal line, connected via a switching element to an intersection of the signal line and the scanning line, and formed in a layer above the signal line; A plurality of shield electrodes extending from the scanning lines and having electrostatic shielding properties formed along the signal lines.

Each shield electrode formed along the signal line is connected to one of two adjacent pixel electrodes, one of the side edges of the pixel electrode and the other of the side edges of the signal line. Of the first portion provided so as to overlap only the side edge on the pixel electrode side, the side edge of the other pixel electrode, and the side edge of the signal line, only the side edge on the other pixel electrode side And a second portion provided in an overlapping manner, wherein the overlap width of the shield electrode and the pixel electrode is formed larger than the overlap width of the signal line and the pixel electrode.

[0012] According to the active matrix type liquid crystal display device configured as described above, the shield electrode having the electrostatic shielding property provided by extending a part of the auxiliary capacitance line or the scanning line is provided within one pixel pitch. , And is formed so as to intersect with the signal line and partially overlap with the periphery of the adjacent display pixel electrode. Therefore, it is possible to realize an active matrix type liquid crystal display device having a high aperture ratio with a small increase in the load capacitance of the signal line while having a sufficient electrostatic shielding property.

Further, by increasing the overlap width between the shield electrode provided below the signal line and the pixel electrode, light leakage from an oblique direction is reduced, and contrast is improved even when observed from the left and right directions. Thus, an active matrix liquid crystal display device having good display performance without a decrease in the display quality can be realized.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an active matrix type liquid crystal display device according to an embodiment of the present invention will be described in detail with reference to the drawings. As shown in FIGS. 1 and 3, an active matrix type liquid crystal display device 10
Are configured as light-transmitting liquid crystal display devices having a rectangular display area 15, each of which has a rectangular array substrate 12.
And a counter substrate 14. These substrates 12, 1
Numerals 4 are opposed to each other with a predetermined gap by bonding the peripheral edges with a sealing agent (not shown). Then, a liquid crystal layer 90 is sealed between the array substrate 12 and the counter substrate 14 via the alignment films 88 and 89, respectively.

As shown in FIGS. 1 to 3, the array substrate 12 has a glass substrate 60 as an insulating substrate. On the glass substrate, a large number of signal lines 50 and a large number of scanning lines 62 are provided as wiring. Are provided in a matrix so as to be substantially orthogonal to each other. The signal line 50 is formed on the scanning line 62 via an interlayer insulating film 75.

A region surrounded by two signal lines 50 and two scanning lines 62 has a pixel electrode 5 made of ITO, respectively.
1 is provided, and each pixel electrode is connected to the intersection of the signal line 50 and the scanning line 62 via the TFT 18 as a switching element. Each pixel electrode 51 is formed in a substantially rectangular shape, and forms one pixel.

A signal line drive circuit section 20 is formed at an end of the long side of the array substrate 12, and a scanning line drive circuit section 22 is formed at an end of the short side. The plurality of signal lines 50 are drawn out to the long side of the array substrate 12 and connected to the signal line driving circuit unit 20. The plurality of scanning lines 62 are drawn out to the short side of the array substrate 12 and connected to the scanning line driving circuit unit 22.

More specifically, as shown in FIGS. 2 and 3, each signal line 50 is formed in a linear shape, and a portion between the scanning line 62 and the auxiliary capacitance line 52 is another. The width is formed to be narrower than the part. Each pixel electrode 5
1 is provided such that a pair of short side edges thereof overlap the scanning line 62 by a predetermined width. Further, the edge portion on each long side of each pixel electrode 51 is formed in a step shape, a part of which is provided so as to overlap with the signal line 50 by a predetermined width W1, and the other portion is provided with the signal line 5
0 is provided with a predetermined gap.

The array substrate 12 includes two adjacent scanning lines 6.
A storage capacitance line 52 extending in parallel between the two scanning lines is provided. The auxiliary capacitance line 52 is formed by patterning the same layer as the scanning line 62. Also, the array substrate 1
Reference numeral 2 includes a shield electrode 53 having an electrostatic shielding property formed by extending a part of the auxiliary capacitance line 52 along each signal line 50.

Each shield electrode 53 extends from the auxiliary capacitance line 52 to the vicinity of the scanning line 62, and is formed substantially in a key shape. That is, the shield electrode 53 is
A first portion 53a extending from the auxiliary capacitance line 52 in parallel with the signal line 50, a bent portion 53b extending from a tip of the first portion in a direction orthogonal to the signal line, and a bent portion 53b extending in parallel with the signal line. And a second portion 53c extending from the second portion 53c.

The first portion 53a is provided eccentrically to the right with respect to the signal line 50 in FIG. 2, and one side edge thereof overlaps the pixel electrode 51 on the right by a predetermined width W2 and the signal line 50 and the pixel The gap between the electrode and the electrode is shielded, and the other side edge is positioned so as to overlap only with the signal line 50. Conversely, the second portion 53c is connected to the signal line 5 in FIG.
0 is provided eccentrically to the left side, and one side edge thereof overlaps the left side pixel electrode 51 by a predetermined width W2 to shield the gap between the signal line 50 and the pixel electrode, and the other side edge portion is It is located overlapping only the line 50.

Further, the shield electrode 53 is connected to the pixel electrode 51.
The electrode length L1 of the first portion 53a and the second portion 53c are set so that two signal lines adjacent to each other across
Are formed so that the electrode lengths L2 of the electrodes are substantially equal.
Accordingly, the signal line 50 to which the TFT 18 is connected, that is, the signal line 50 on the left side of the pixel electrode and the signal line 50 to which the TFT is not connected,
That is, the effect of the signal line on the left side of the pixel electrode is substantially the same, and the effect of the parasitic capacitance between the two signal lines and the pixel electrode 51 can be minimized.

As shown in FIGS. 2 and 4, the pixel electrode 5
1 and the shield electrode 53 have an overlap width W2 of the pixel electrode 5
1 and the signal line 50 are formed to be larger than the overlapping width W1. Usually, a backlight (not shown) is provided below the array substrate 12. And, for example, FIG.
In the case where the screen of the liquid crystal display device is observed from an oblique left direction, in the overlapping portion between the signal line 50 and the pixel electrode 51, the backlight is formed until the angle between the direction perpendicular to the array substrate 12 and the observation direction becomes θ1. Similarly, the light from the backlight does not leak out. Similarly, at the overlapping portion between the shield electrode 53 and the pixel electrode 51, the angle between the direction perpendicular to the array substrate and the observation direction becomes larger than θ2 or more from the backlight. There is no leakage of light and no reduction in contrast.

If the widths W1 and W2 of the overlapping portions are equal, θ1
> Θ2. This depends on the distance from the pixel electrode 51 to the signal line 50 or the shield electrode 53, and the shield electrode 53 functioning as a light shielding layer is more distant from the pixel electrode 51 than the signal line 50 also functioning as a light shielding layer. Therefore, in a portion where the pixel electrode and the shield electrode overlap, the angle θ2 at which light leakage occurs becomes small.

However, as in this embodiment, by forming the overlap width W1 of the pixel electrode 51 and the shield electrode 53 larger than the overlap width W2 of the pixel electrode 51 and the signal line 50, for example, the light-shielding layer In the region formed by the shield electrode 53, the angle θ2 at which light leakage occurs becomes large, and even when the display screen of the liquid crystal display device is observed from an oblique direction, a decrease in contrast is small and good display characteristics can be obtained. .

In this embodiment, the overlap width W between the first portion 53a of the shield electrode 53 and the pixel electrode 51 is set.
2 and the difference (W2−W1) between the overlapping width W1 of the signal line 50 and the pixel electrode 51 are set to be substantially equal to the thickness of the interlayer insulating film 75.

Next, the structure of the liquid crystal display device 10 will be described in detail together with the method of manufacturing the same. First, an a-Si film having a thickness of about 50 nm is formed on a light-transmitting insulating substrate 60 such as a high-strain-point glass substrate or a quartz substrate by a CVD method or the like. After annealing this a-Si film at 450 ° C. for 1 hour, XeCl excimer laser is irradiated to polycrystallize a-Si. Thereafter, the polycrystalline Si is patterned by a photo-etching method to form a channel layer of a TFT (hereinafter, referred to as a pixel TFT) 18 for forming a pixel portion in a display region, and a TFT of a driving circuit portion (hereinafter, referred to as a circuit TFT). A polysilicon film serving as a channel layer 68, 71 is formed.

Next, S is formed on the entire surface of the substrate 60 by the CVD method.
A gate insulating film 61 made of an iOx film is deposited to a thickness of about 100 nm. Subsequently, Ta,
A scanning line 62 having a gate electrode integrally is formed by depositing a single film of Cr, Al, Mo, W, Cu, or the like, or a laminated film or alloy film of about 400 nm in thickness and patterning it into a predetermined shape by a photoetching method. The auxiliary capacitance line 52, the gate electrode 63 of the pixel TFT 18, the gate electrodes 64 and 65 of the circuit TFTs 68 and 71, and various wirings in the drive circuit units 20 and 22 are formed. At this time, the shield electrode 53 is formed in a predetermined shape at a predetermined position simultaneously with the auxiliary capacitance line 52.

Thereafter, the gate electrodes 63 and 65 are used as a mask.
Polysilicon by ion implantation or ion doping
The impurity is implanted into the pixel film, and the drain of the pixel TFT 18 is
Forming an electrode 66 and a source electrode 67;
The source electrode 69 and the drain of the channel type circuit TFT 68
The in-electrode 70 is formed. Impurity implantation, for example,
5x10 at speed voltage 80keV¹⁵atmos / cm²No
Dose, PH₃/ H ₂To inject phosphorus at a high concentration.

Subsequently, the pixel TFT 18 and the N-channel type circuit TFT 68 in the drive circuit section are coated with a resist so as to prevent impurities from being implanted, and then the gate electrode 64 of the P-channel type circuit TFT 71 is used as a mask. 5 × 10 ¹⁵ at acceleration voltage of 80 keV
Boron is implanted at a high dose of B ₂ H ₆ / H ₂ at a dose of ms / cm ² to form a source electrode 72 and a drain electrode 73 of a P-channel type circuit TFT 71.

Thereafter, each of the pixel TFT 18 and the circuit TFT 68 is further provided with an N-channel LDD (Light).
tly Doped Drain) 74a, 74b, 7
Impurities are implanted to form 4c and 74d, and the array substrate is annealed to activate the impurities.

Subsequently, for example, using the PECVD method,
Interlayer insulating film 7 made of SiO _{2 over} the entire surface of insulating substrate 60
5 is deposited to a thickness of about 500 nm. Further, a contact hole 76 reaching the drain electrode 66 of the pixel TFT 18, a contact hole 77 reaching the source electrode 67, and a plurality of contact holes reaching the source electrodes 69, 72 and the drain electrodes 70, 73 of the circuit TFTs 68, 71 are formed by photoetching. Is formed.

Next, Ta, Cr, Al, Mo, W, Cu
Such as a simple substance or a laminated film or an alloy film of 500 nm
To the signal line 50, the connection between the drain electrode 66 of the pixel TFT 18 and the signal line 50, the connection between the source electrode 67 and the upper electrode 78 of the auxiliary capacitance element, Also, various wirings and the like for the circuit TFTs 68 and 71 in the drive circuit area are performed.

Further, the insulating substrate 60 is formed by PECVD.
A protective insulating film 79 made of SiNx is formed on the entire surface of the substrate, and a contact hole 80 reaching the upper electrode 78 of the auxiliary capacitance element is formed by a photoetching method. Next, after applying an organic insulating film 81 to the entire surface of the substrate to a thickness of about 3 μm, a contact hole 82 reaching the upper electrode 78 of the auxiliary capacitance element is formed.

Finally, lTO is formed to a thickness of about 100 nm on the organic insulating film 81 by a sputtering method, and is patterned into a predetermined shape by a photo-etching method.
Is formed, and the pixel electrode 51 and the upper electrode 78 of the auxiliary capacitance element are connected via the contact holes 80 and 82. Thereby, the array substrate 1 of the liquid crystal display device 10
2 is obtained.

On the other hand, the opposing substrate 14 is a transparent insulating substrate, such as a glass substrate 84, on which a colored layer 85 in which a pigment or the like is dispersed is formed. Counter electrode 8 which is an electrode
6 is obtained.

The array substrate 1 formed as described above
2, an alignment film 88 made of low-tone cure type polyimide on the entire pixel electrode 51 side and the entire surface of the counter substrate 14 on the counter electrode 86 side;
Rubbing treatment is performed so that the orientation axes are different by 90 degrees when these substrates are opposed to each other. After that, the array substrate 12 and the opposing substrate 14 are opposed to each other and assembled to form a cell, and a nematic liquid crystal 90 is injected into the gap and sealed. Then, both substrates 12, 14
The liquid crystal display device 10 is obtained by attaching a deflecting plate to the outer surfaces of the insulating substrates 60 and 84, respectively.

In the liquid crystal display device configured as described above, the shield electrode 53 formed for each pixel on the array substrate 12 is formed only on one side of the signal line 50. Therefore, the interval between the shield electrodes, which is conventionally required, is not required, and the signal line 50 and the shield electrode 53 may be provided so as to overlap only on one side, so that the signal line 50 is formed with the minimum processing line width. It becomes possible.

As a result, a high aperture ratio can be realized while maintaining the same electrostatic shielding effect as in the prior art, and image quality defects such as crosstalk and uneven brightness can be reduced, and a display with improved display quality can be realized. .

Further, since the overlap width W2 between the pixel electrode 51 and the shield electrode 53 is formed to be larger than the overlap width W1 between the pixel electrode 51 and the signal line 50, the screen of the liquid crystal display device was observed obliquely. Even in this case, light leakage is reduced, and a favorable display can be performed by preventing a decrease in contrast.

The present invention is not limited to the above-described embodiment, but can be variously modified within the scope of the present invention. For example, the present invention can be variously modified.
For example, as in the second embodiment shown in FIG. 5, each shield electrode 53 may be formed linearly, and the signal line 50 may be formed in a key shape. In this case, W2> W1 is satisfied. Thereby, the same effect as in the above-described embodiment can be obtained.

Further, according to the third embodiment shown in FIG. 6, both the shield electrode 53 and the signal line 50 are formed in a key shape. With such a configuration,
In addition to the effects described above, a higher aperture ratio can be obtained.

According to the fourth embodiment shown in FIG. 7, each auxiliary capacitance line 52 is provided substantially at the center of two adjacent scanning lines 62. Each shield electrode 53 has first and second electrode portions 53a and 53c extending in opposite directions from the auxiliary capacitance line 52, and is formed in a key shape as a whole. With such a configuration, the same operation and effect as those of the above-described embodiment can be obtained.

Further, according to the fifth embodiment shown in FIG. 8, each shield electrode 53 is formed by extending a part of the preceding scanning line 62, and the first part 53a, the bent part 53b,
It is formed in a key shape having the second portion 53c. In such a configuration, an auxiliary capacitance line is not required, and a higher aperture ratio can be obtained.

In the second to fourth embodiments, other configurations are the same as those of the first embodiment, and the same portions are denoted by the same reference characters and detailed description thereof will be omitted. I do. Further, in the above-described embodiment, an active matrix type liquid crystal display device using a polysilicon layer as a semiconductor layer has been described. However, the present invention uses another semiconductor layer such as an amorphous silicon layer as a semiconductor layer. The present invention is also applicable to an active matrix type liquid crystal display device.

[0046]

As described above in detail, according to the present invention, a shield electrode having an electrostatic shielding property formed by extending a part of an auxiliary capacitance line or a scanning line is connected to a peripheral edge of an adjacent pixel electrode. It is provided substantially along the signal line so as to partially overlap with the portion, and is formed so that the overlap width of the pixel electrode and the shield electrode is larger than the overlap width of the pixel electrode and the signal line. As a result, an active matrix type liquid crystal display device having a high aperture ratio, high brightness, no display defects such as crosstalk and uneven brightness, and further improved display quality with little reduction in contrast even when obliquely observed is provided. Can be provided.

[Brief description of the drawings]

FIG. 1 is a perspective view showing an active matrix type liquid crystal display device according to a first embodiment of the present invention.

FIG. 2 is a plan view showing a part of an array substrate of the liquid crystal display device.

FIG. 3 is a sectional view of the liquid crystal display device taken along line AA of FIG. 2;

4A is a cross-sectional view of the array substrate taken along line BB in FIG. 2, and FIG. 4B is a cross-sectional view of the array substrate taken along line CC in FIG. FIG.

FIG. 5 is a plan view showing an array substrate of a liquid crystal display device according to a second embodiment of the present invention.

FIG. 6 is a plan view showing an array substrate of a liquid crystal display device according to a third embodiment of the present invention.

FIG. 7 is a plan view showing an array substrate of a liquid crystal display according to a fourth embodiment of the present invention.

FIG. 8 is a plan view showing an array substrate of a liquid crystal display according to a fifth embodiment of the present invention.

[Explanation of symbols]

 Reference Signs List 12 array substrate 14 counter substrate 18 TFT 50 signal line 51 pixel electrode 52 auxiliary capacitance line 53 shield electrode 53a first portion 53c second portion 60, 85 glass substrate 75 interlayer insulating film

Continued on the front page F term (reference) 2H092 JA25 JA29 JA33 JA35 JA38 JA42 JA44 JB13 JB23 JB32 JB33 JB38 JB51 JB57 JB63 JB69 KA04 KA07 KA12 KB14 KB24 MA08 MA14 MA15 MA16 MA18 MA19 MA20 MA27 MA29 MA30 NA01 NA25 NA27 PA06

Claims (10)

[Claims] A first liquid crystal layer disposed opposite to the first liquid crystal layer;
And a second substrate, wherein the first substrate has a plurality of scanning lines provided substantially in parallel on an insulating substrate, and a plurality of scanning lines provided on the scanning lines via an insulating film so as to intersect the scanning lines. And at least a part thereof is provided in a region surrounded by the scanning line and the signal line and at least partially overlaps the signal line, and at a crossing portion of the signal line and the scanning line via a switching element. A plurality of pixel electrodes connected to each other and formed in a layer above the signal line, and formed in a direction substantially perpendicular to the signal line, and provided between the scanning lines adjacent to each other. A plurality of auxiliary capacitance lines also formed in the lower layer, and a plurality of shield electrodes extending from each of the auxiliary capacitance lines and having an electrostatic shielding property formed along the signal lines. Formed along The shield electrode is provided so as to overlap with only the side edge of the one pixel electrode side, of the side edge of one pixel electrode and the side edge of the signal line, of the two adjacent pixel electrodes. Of the first portion, the side edge of the other pixel electrode, and the side edge of the signal line, the second portion being provided so as to overlap only with the side edge on the other pixel electrode side.
And an overlapping width of the shield electrode and the pixel electrode is larger than an overlapping width of the signal line and the pixel electrode. 2. An overlap width between a first portion of each of said shield electrodes and said one pixel electrode is larger than an overlap width between said signal line and said one pixel electrode. An active matrix type liquid crystal display device as described above. 3. The overlap width between the second portion of each shield electrode and the other pixel electrode is larger than the overlap width between the signal line and the other pixel electrode. 3. The active matrix liquid crystal display device according to 2. 4. An insulating film is provided between the signal line and the shield electrode, and an overlap width between a first portion of the shield electrode and the one pixel electrode; The difference from the overlap width with the one pixel electrode is
4. The active matrix type liquid crystal display device according to claim 1, wherein the thickness of the insulating film is substantially equal to the thickness of the insulating film. 5. Each of the signal lines is formed in a straight line, and each of the shield electrodes has a bent portion connecting the first and second portions.
The active matrix type liquid crystal display device according to any one of the above. 6. Each of the shield electrodes is formed in a straight line,
The signal line located between the adjacent pixel electrodes has a portion overlapping the first portion of the shield electrode, a portion overlapping the second portion of the shield electrode, and a bent portion connecting the portions. 5. The method according to claim 1, wherein
The active matrix type liquid crystal display device according to any one of the above. 7. The storage capacitor line according to claim 1, wherein the storage capacitance line is provided substantially at the center between two adjacent scanning lines, and a first electrode of each of the shield electrodes is provided.
5. The active matrix type liquid crystal display device according to claim 1, wherein the second portion and the second portion extend in directions opposite to each other from the auxiliary capacitance line. 8. A first liquid crystal display device having a first liquid crystal layer and a first liquid crystal layer interposed therebetween.
And a second substrate, wherein the first substrate has a plurality of scanning lines provided substantially in parallel on an insulating substrate, and a plurality of scanning lines provided on the scanning lines via an insulating film so as to intersect the scanning lines. And at least a part thereof is provided in a region surrounded by the scanning line and the signal line and at least partially overlaps the signal line, and at a crossing portion of the signal line and the scanning line via a switching element. A plurality of pixel electrodes connected to each other and formed in a layer above the signal line, and a plurality of shield electrodes extending from the respective scanning lines and having an electrostatic shielding property formed along the signal lines. Each of the shield electrodes formed along the signal line is connected to one of the two adjacent pixel electrodes, the side edge of one of the pixel electrodes, and the side edge of the signal line. Of the second superposed only on the side edge of Portion and the side edges of the other pixel electrodes, and among the side edge portions of the signal line, a second provided to overlap only the side edge portion of the other of the pixel electrode side
And an overlapping width of the shield electrode and the pixel electrode is larger than an overlapping width of the signal line and the pixel electrode. 9. An overlap width between a first portion of each shield electrode and said one pixel electrode is larger than an overlap width between said signal line and said one pixel electrode. An active matrix type liquid crystal display device as described above. 10. The overlap width between the second portion of each shield electrode and the other pixel electrode is larger than the overlap width between the signal line and the other pixel electrode. 10. An active matrix liquid crystal display device according to item 9.