JP2000260735A - Sheet for fixing semiconductor wafer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To protect a radiation hardening pressure sensitive adhesive layer from the outside environment including ultraviolet rays and prevent the electrification of the layer when removing a released liner, by forming the pressure sensitive adhesive layer on a base material sheet from a radiation hardening pressure sensitive adhesive, and forming the released liner on the pressure sensitive adhesive layer from a base film, a metal evaporation layer, and a release agent layer. SOLUTION: A pressure sensitive adhesive layer on a base material sheet is formed of a radiation hardening pressure sensitive adhesive, and a released liner on the pressure sensitive adhesive layer is formed from a base film, a metal evaporation layer, and a release agent layer. The release agent layer is formed on either face of a released film consisting of the base film and the metal evaporation layer. The metal evaporation layer shields the pressure sensitive adhesive layer from the light and also prevents the electrification of the pressure sensitive adhesive layer. Metal used for the metal evaporation layer is aluminum, chromium, nickel, copper, or the like. For the materials of the base film, the release agent layer, and the base material sheet, the materials already known to the public are used.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer fixing sheet for preventing the semiconductor wafer from being scattered unnecessarily when the semiconductor wafer is cut and separated into chips, and a semiconductor wafer is fixed when the semiconductor wafer is polished. The present invention relates to a sheet for fixing a semiconductor wafer, which protects a radiation-curable pressure-sensitive adhesive layer from an external environment such as ultraviolet rays, and further does not charge static electricity.

[0002]

2. Description of the Related Art Conventionally, as a semiconductor wafer fixing sheet, there is a sheet in which a base sheet, an adhesive layer and a release liner are laminated in this order, and radiation curing is performed to adjust the adhesive strength of the adhesive layer. What was formed with a mold adhesive is known.

Here, if light is applied to the pressure-sensitive adhesive sheet on which the radiation-curable pressure-sensitive adhesive is laminated, the initially-adjusted adhesive force cannot be adjusted, so that a light-shielding sheet such as a metal foil is previously provided on the base sheet of the pressure-sensitive adhesive sheet. Is known (for example, JP-A-4-20581).

In order to prevent static electricity generated when the release liner is peeled off, there is known a means for mixing or applying an antistatic agent to the pressure-sensitive adhesive layer or the base sheet.

[0005]

However, in the former method, since the release liner side was not protected,
There was a problem that the radiation-type pressure-sensitive adhesive was cured by receiving light from the release liner side. Further, in the latter case, a new problem has arisen such as the release agent being transferred to the pressure-sensitive adhesive layer due to the change over time of the antistatic agent.

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a more stable sheet for fixing a semiconductor wafer, which can prevent curing of a radiation-type pressure-sensitive adhesive for a long term and does not become charged even when the release liner is peeled off. .

[0007]

The present inventors have made intensive studies in view of the above, and as a result, have found that in the semiconductor wafer fixing sheet laminated in the order of a base sheet, an adhesive layer and a release liner, the adhesive The release agent layer is formed of a radiation-curable pressure-sensitive adhesive, the release liner is formed of a base film, a metal deposition layer and a release agent layer, and the release agent layer is formed of the base film or the release film formed of the metal deposition layer. The inventors have found that the above-mentioned problems can be solved by laminating on such a surface, and have completed the present invention.

[0008]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Here, the release liner which is a feature of the present invention is formed of a base film, a metal deposition layer and a release agent layer, and the metal deposition layer shields the pressure-sensitive adhesive layer from light. This is adopted for preventing the occurrence of static electricity.

The thickness of the metal deposition layer may be the thickness of a general metal deposition, but if it is too thin, the light-shielding effect is not exhibited, and if it is too thick, the workability is poor and the cost is high. Angstrom) is good,
Preferably, 500-1000 ° is good. Examples of metals that can be used for metal deposition include aluminum, chromium, nickel, and copper. The required light shielding effect is 10% or less in light transmittance.

The base film can be made of a conventionally known material as a release liner, and specific examples include polyethylene terephthalate, polypropylene, and polyethylene. The thickness of the base film may be the same as the thickness conventionally used, and specifically, 10 to 100 μm, and preferably 12 to 50 μm.

The release agent layer can be made of a conventionally known material as a release liner, and specific examples thereof include silicone-based, fluorine-based, and long-chain alkyl-based materials.

As the base sheet for fixing a semiconductor wafer according to the present invention, a conventionally known base sheet can be appropriately selected and used, for example, polyvinyl chloride, polyethylene, polypropylene, polyethylene terephthalate, ethylene vinyl alcohol film, etc. There is.

For the pressure-sensitive adhesive layer, a conventionally known radiation-curable pressure-sensitive adhesive can be used. For example, JP-A-9-286965,
JP-A-9-291258, JP-A-9-1981733
And those described in JP-A-9-328663 and the like can be appropriately adopted.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of a semiconductor wafer fixing sheet according to the present invention will be described in detail.

The semiconductor wafer fixing sheet according to the present embodiment is made of a polyester film manufactured by Teijin Limited having a thickness of 100 μm.
And a radiation-curable pressure-sensitive adhesive (100 parts by weight of an elastomer, an ultraviolet-curable compound 120) as a pressure-sensitive adhesive layer having a thickness of 25 μm laminated on one surface of the substrate sheet.
Parts based on a radiation-curable pressure-sensitive adhesive composed of 0.5 parts by weight of a UV curing initiator). A release liner is laminated on the pressure-sensitive adhesive layer. The release liner is made of a 38-μm-thick PET (polyethylene terephthalate) sheet, aluminum deposited on the sheet to a thickness of 500 °, and a 0. The silicone release agent laminated at 5 μm is formed by Toray Dow Corning.

The light transmittance of the release liner of the sheet for fixing a semiconductor wafer according to the present embodiment is 5%, the adhesive strength of the pressure-sensitive adhesive layer immediately after preparation is 9.8 N / 20 mm,
The adhesive strength after the 3-day exposure test was 9.3 N / 20 mm, and the release liner was peeled off at a speed of 500 mm / s.
An initial charging value (a charged voltage measuring instrument, Domestometer Analyzer U (manufactured by Shisido Electrostatic Co., Ltd.)) measured 0.1 seconds later was 0.1 kV or less. In addition, the measuring method and measuring device of the initial charge value are the same in the following comparative examples, and the description is omitted.

In the comparative example according to the present invention, the release liner of the above-described example is formed into a PET sheet without metal deposition.

In this comparative example, the light transmittance of the release liner was 98%, the adhesive strength of the pressure-sensitive adhesive layer immediately after preparation was 9.8 N / 20 mm, and the adhesive strength after a 3-day exposure test was 2.0 N / 20 mm and a release liner of 5
The initial charge value measured 2 seconds after peeling off at a speed of 00 mm / s was 3.0 kV or more.

According to this embodiment, the radiation-curable pressure-sensitive adhesive layer is protected from an external environment such as ultraviolet rays, and furthermore, it is not charged even when the release liner is peeled off. Obtainable.

[0020]

The semiconductor wafer fixing sheet according to the present invention is a semiconductor wafer fixing sheet in which a base sheet, an adhesive layer and a release liner are laminated in this order, wherein the adhesive layer is a radiation-curable adhesive. The release liner is formed of a base film, a metal deposition layer and a release agent layer, and the release agent layer is laminated on any surface of the release film formed of the base film and the metal deposition layer. Accordingly, the radiation-curable pressure-sensitive adhesive layer is protected from an external environment such as ultraviolet rays, and furthermore, even if the release liner is peeled off, it is not charged, so that a more stable sheet for fixing a semiconductor wafer can be obtained.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Shigeru Wada 2-3-1-1, Kamakura-shi, Kanagawa Prefecture Inside Toyo Kagaku Co., Ltd. (72) Inventor Masashi Kume 2-3-1-1, Kamakura-shi, Kanagawa Toyo F term in Chemical Co., Ltd. (reference) 4J004 AA05 AA17 AB06 CC02 DA02 DA04 DA05 DB04 FA05 FA08 4J040 EK032 JA09 JB07 JB08 JB09 KA13 LA06 NA20

Claims (1)

[Claims] 1. A semiconductor wafer fixing sheet in which a base sheet, an adhesive layer and a release liner are laminated in this order,
The pressure-sensitive adhesive layer is formed of a radiation-curable pressure-sensitive adhesive, the release liner is formed of a base film, a metal deposition layer and a release agent layer, and the release agent layer is formed of the base film and the metal deposition layer. A sheet for fixing a semiconductor wafer, which is laminated on any surface of the film.