JP2003282489A - Adhesive sheet used for processing semiconductor - Google Patents

Adhesive sheet used for processing semiconductor

Info

Publication number
JP2003282489A
JP2003282489A JP2002085188A JP2002085188A JP2003282489A JP 2003282489 A JP2003282489 A JP 2003282489A JP 2002085188 A JP2002085188 A JP 2002085188A JP 2002085188 A JP2002085188 A JP 2002085188A JP 2003282489 A JP2003282489 A JP 2003282489A
Authority
JP
Japan
Prior art keywords
pressure
sensitive adhesive
adhesive sheet
sheet
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002085188A
Other languages
Japanese (ja)
Inventor
Yukinori Takeda
幸典 武田
Naoya Oda
直哉 織田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP2002085188A priority Critical patent/JP2003282489A/en
Publication of JP2003282489A publication Critical patent/JP2003282489A/en
Pending legal-status Critical Current

Links

Landscapes

  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Dicing (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an adhesive sheet used for processing semiconductors having the capability of preventing electrostatic charges from being generated in a semiconductor manufacturing process and semiconductor devices from breaking down and degrading in their properties due to the electrostatic charges. <P>SOLUTION: The adhesive sheet used for processing the semiconductors in which an adhesive agent layer comprising a base polymer, a radiation polymerizable chemical agent and a radiation polymerization starting agent is applied to a substrate surface pervious with respect to an ultraviolet ray and/or an electron beam, wherein an antistatic effect is obtained and an electrostatic-charged voltage does not exceed 200 V in the adhesive surface of the sheet when a film for exfoliation has been exfoliated. <P>COPYRIGHT: (C)2004,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、基材と粘着剤層と
を備え且つ帯電防止効果を有する半導体加工用粘着シー
トに関するものである。
TECHNICAL FIELD The present invention relates to a pressure-sensitive adhesive sheet for semiconductor processing, which has a base material and a pressure-sensitive adhesive layer and has an antistatic effect.

【0002】[0002]

【従来の技術】従来、半導体ウエハおよび一括封止され
たパッケージに貼着し、ダイシング、エキスパンティン
グ等を行い、次いでピックアップすると同時にマウンテ
ィングする(パッケージの場合はトレイに収納される)
際に用いる半導体加工用シートとして、紫外線及び/又
は電子線に対し透過性を有する基材上に紫外線及び/又
は電子線により重合硬化反応をする粘着剤層が塗布され
た粘着シートを用い、ダイシング後に紫外線及び/又は
電子線を粘着剤層に照射し、粘着剤層を重合硬化反応を
させ、粘着力を低下せしめて半導体ウエハまたは切断さ
れたパッケージをピックアップする方法が知られてい
る。例えば、特開昭60−196956号公報、特開昭
60−223139号公報には、粘着剤層を構成する光
重合性開始剤として、トリメチロールプロパントリアク
リレート、ペンタエリスリトールトリアクリレート、ポ
リエチレングリコールジアクリレート、オリゴエステル
アクリレート等の分子内に紫外線及び/又は電子線重合
性炭素−炭素二重結合を少なくとも2個以上有するアク
リル樹脂系化合物を用いることが提案されている。
2. Description of the Related Art Conventionally, a semiconductor wafer and a package that have been collectively sealed are attached to each other, dicing, expanding, etc. are performed, and then they are mounted at the same time as mounting (in the case of a package, they are stored in a tray).
As a semiconductor processing sheet used at this time, a pressure-sensitive adhesive sheet in which a pressure-sensitive adhesive layer that undergoes a polymerization and curing reaction by ultraviolet rays and / or electron beams is applied on a base material that is transparent to ultraviolet rays and / or electron beams is used for dicing. There is known a method of subsequently irradiating the pressure-sensitive adhesive layer with ultraviolet rays and / or electron beams to polymerize and cure the pressure-sensitive adhesive layer to reduce the pressure-sensitive adhesive force and pick up a semiconductor wafer or a cut package. For example, in JP-A-60-196956 and JP-A-60-223139, trimethylolpropane triacrylate, pentaerythritol triacrylate, polyethylene glycol diacrylate are used as photopolymerizable initiators constituting the adhesive layer. It has been proposed to use an acrylic resin-based compound having at least two UV- and / or electron-beam polymerizable carbon-carbon double bonds in the molecule, such as oligoester acrylate.

【0003】しかしながら、近年半導体デバイスの高集
積化に伴い回路が高詳細化し、帯電による製品破壊や作
業上の不具合が問題が生じている。工程中懸念される帯
電としては、シートを剥離フィルムより剥がす際の剥離
による帯電、ダイシング時のブレードとシートと摩擦に
よる帯電、ダイシング後シートを吸着テーブルより取り
外す際の剥離帯電、洗浄時に高圧吐出される洗浄液とシ
−トとの摩擦による帯電、洗浄後乾燥時にテーブルを高
速回転することによる発生する帯電、チップおよびパッ
ケージをピックアップする際の剥離による帯電等などが
ある。これら帯電により半導体デバイスの破壊や性能劣
化が生じたり、以降の作業に不具合を生じるという問題
が発生している。
However, in recent years, with the high integration of semiconductor devices, circuits have become more detailed, and problems such as product destruction due to electrification and operational problems have arisen. Charges that are a concern during the process include charging by peeling when peeling the sheet from the release film, charging by friction between the blade and the sheet during dicing, peeling charge when removing the sheet from the adsorption table after dicing, and high-pressure discharge during cleaning. There are charging due to friction between the cleaning liquid and the sheet, charging generated by rotating the table at a high speed during cleaning and drying, charging due to peeling when picking up the chip and the package. These electrifications cause problems such as destruction of semiconductor devices and deterioration of performance, and problems in subsequent operations.

【0004】[0004]

【発明が解決しようとする課題】本発明の目的は、上記
問題点を解決し、半導体製造工程中における帯電の発
生、特に基材を剥離フィルムから剥がす際に発生する帯
電を防止し、該帯電による半導体デバイスの破壊および
製品の劣化を防ぐことのできる半導体加工用粘着シート
を提供することにある。
SUMMARY OF THE INVENTION The object of the present invention is to solve the above problems and prevent the occurrence of electrification during the semiconductor manufacturing process, especially the electrification that occurs when the substrate is peeled from the release film, Another object of the present invention is to provide a pressure-sensitive adhesive sheet for semiconductor processing, which can prevent the destruction of semiconductor devices and the deterioration of products due to the above.

【0005】[0005]

【課題を解決するための手段】本発明は、(1) 紫外
線及び/又は電子線に対し透過性を有する基材、ベース
ポリマーと放射線重合性化合物と放射線重合性重合開始
剤とからなる粘着剤層、並びに剥離用フィルムからなる
半導体加工用粘着シートにおいて、該粘着剤層の厚みが
10〜40μmであり、半導体加工用粘着シートが帯電
防止効果を有し、剥離用フィルムを剥がした際のシート
の粘着面への帯電圧が200V以下であることを特徴と
する半導体加工用粘着シート、(2) 該基材が帯電防
止処理を施されている(1)項記載の半導体加工用粘着
シートである。
The present invention provides (1) a pressure-sensitive adhesive comprising a base material having transparency to ultraviolet rays and / or electron beams, a base polymer, a radiation-polymerizable compound, and a radiation-polymerizable polymerization initiator. In the pressure-sensitive adhesive sheet for semiconductor processing, which comprises a layer and a peeling film, the pressure-sensitive adhesive layer has a thickness of 10 to 40 μm, and the pressure-sensitive adhesive sheet for semiconductor processing has an antistatic effect, and is a sheet when the peeling film is peeled off. A semiconductor processing pressure-sensitive adhesive sheet having a charging voltage of 200 V or less to the pressure-sensitive adhesive surface, (2) The semiconductor processing pressure-sensitive adhesive sheet according to item (1), wherein the base material has been subjected to antistatic treatment. is there.

【0006】[0006]

【発明の実施の形態】以下本発明を詳細に説明する。本
発明において、半導体加工用粘着シートは剥離用のフィ
ルムを剥がした際のシートの粘着面への帯電圧が200
V以下になるように設定する。帯電圧が200V以上に
なると半導体デバイスの破壊につながったり、組み立て
工程中の作業上の不具合を生じたりする問題が発生す
る。
BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described in detail below. In the present invention, the adhesive sheet for semiconductor processing has a voltage applied to the adhesive surface of the sheet of 200 when the release film is peeled off.
It is set to be V or less. When the charged voltage is 200 V or more, there arises a problem that the semiconductor device may be broken or a work problem may occur during the assembly process.

【0007】本発明に用いられる基材には帯電防止処理
が施されていることが好ましい。処理を行なっていない
場合、剥離フィルムを剥がした際等組立工程中に何らか
の原因で発生する電荷が移動できないため帯電してしま
う。帯電防止処理方法については、特に限定するもので
はなく、帯電防止剤の練り込み、粘着剤層と基材界面へ
のアンカー処理、基材の粘着剤を有する面と反対側の面
への塗布処理、またはこれらを組み合わせる処理などが
挙げられる。これら処理に用いられる帯電防止剤として
は、例えばアルファオレフィンスルホン酸塩、アルキル
硫酸エステル塩、メチルタウリン酸塩、アルキルベンゼ
ンスルホン酸塩、エーテルカルボン酸塩等に代表される
アニオン系界面活性剤、第四級アンモニウム、アミン塩
類等に代表されるカチオン系界面活性剤、ノニルフェノ
ール系、高級アルコール系、脂肪酸エステル系、アルキ
ルアミンエチレンオキサイド付加体等に代表されるノニ
オン系界面活性剤などがある。または、これらを複合し
て用いてもよい。またポリピロール系、ポリアニリン
系、ポリチオフェン系等のπ電子共役系や金属イオンを
ドーピングした導電性ポリマーや、或いは酸化錫、酸化
インジウム、酸化亜鉛、酸化チタン、カーボンブラック、珪素
系有機化合物があげられる。これらを単体で使用しても
効果は得られるがこれら2種以上を組み合わせて使用し
ても差し支えない。また、ポリアルキレングリコールと
過塩素酸リチウムなどの過塩素酸塩との複合体等の導電
性フィラーや帯電防止性を上げる為に導電性フィラーに
アンチモン等をドーピングしたものを使用してもよい。
また上記の界面活性剤、金属酸化物、導電ポリマーを複
合して用いてもよい。
The base material used in the present invention is preferably subjected to an antistatic treatment. If the treatment is not performed, the electric charge generated due to some cause during the assembling process such as peeling off the release film cannot be transferred, so that the film is charged. The antistatic treatment method is not particularly limited, and kneading of an antistatic agent, anchor treatment at the interface between the pressure-sensitive adhesive layer and the base material, coating treatment at the surface opposite to the surface having the pressure-sensitive adhesive on the base material , Or a combination of these. Examples of the antistatic agent used in these treatments include anionic surfactants represented by alpha olefin sulfonates, alkyl sulfate ester salts, methyl taurates, alkylbenzene sulfonates, ether carboxylates, etc. There are cationic surfactants typified by primary ammonium and amine salts, nonylphenol-based, higher alcohol-based, fatty acid ester-based, nonionic surfactants typified by alkylamine ethylene oxide adducts, and the like. Alternatively, these may be used in combination. In addition, a π-electron conjugated system such as polypyrrole type, polyaniline type, polythiophene type or the like, a conductive polymer doped with a metal ion, tin oxide, indium oxide, zinc oxide, titanium oxide, carbon black, or a silicon type organic compound can be used. Even if these are used alone, the effect can be obtained, but they may be used in combination of two or more kinds. In addition, a conductive filler such as a complex of polyalkylene glycol and a perchlorate such as lithium perchlorate, or a conductive filler doped with antimony or the like to improve antistatic property may be used.
Further, the above surfactant, metal oxide, and conductive polymer may be used in combination.

【0008】本発明において用いられる基材としては、
紫外線及び/又は電子線に対して透過性を有するもので
あれば特に限定されず、例えば、塩化ビニル、ポリエチ
レンテレフタレート、ポリエチレン、ポリプロピレン、
ポリウレタン、エチレン酢酸ビニル共重合体、エチレン
−ヘキセン共重合体、エチレン−ブテン共重合体または
エチレン−プロピレン−ブテン共重合体等が用いられ
る。これらに粘着剤層との密着性を上げるための表面処
理や、粘着剤層と接触しない面側に滑り性不与等の表面
処理を施しても構わない。
The substrate used in the present invention is
There is no particular limitation as long as it is transparent to ultraviolet rays and / or electron beams, and examples thereof include vinyl chloride, polyethylene terephthalate, polyethylene, polypropylene,
Polyurethane, ethylene vinyl acetate copolymer, ethylene-hexene copolymer, ethylene-butene copolymer, ethylene-propylene-butene copolymer and the like are used. These may be subjected to a surface treatment for increasing the adhesiveness with the pressure-sensitive adhesive layer or a surface treatment such as non-slipperiness on the side not contacting the pressure-sensitive adhesive layer.

【0009】本発明において用いられるベースポリマー
としては、特に限定されるものではなく、例えば、アク
リル酸、メタクリル酸及びそれらのエステルからなるポ
リマー、アクリル酸、メタクリル酸及びそれらのエステ
ルと共重合可能な不飽和単量体、例えば、酢酸ビニル、
スチレン、アクリロニトリルなどとの共重合体が用いら
れる。また本発明の粘着剤には、凝集力を高めるために
ロジン樹脂、テルペン樹脂、クマロン樹脂、フェノール
樹脂、スチレン樹脂、脂肪族系石油樹脂、芳香族系石油
樹脂、脂肪族芳香族共重合系石油樹脂等の粘着付与剤等
を添加しても構わない。
The base polymer used in the present invention is not particularly limited, and examples thereof include a polymer composed of acrylic acid, methacrylic acid and their esters, and copolymerizable with acrylic acid, methacrylic acid and their esters. Unsaturated monomers such as vinyl acetate,
A copolymer with styrene, acrylonitrile or the like is used. The pressure-sensitive adhesive of the present invention includes a rosin resin, a terpene resin, a coumarone resin, a phenol resin, a styrene resin, an aliphatic petroleum resin, an aromatic petroleum resin, and an aliphatic aromatic copolymer petroleum petroleum in order to enhance cohesive force. A tackifier such as a resin may be added.

【0010】本発明において用いる放射線重合性化合物
としては特に限定されるものではなく、例えばウレタン
アクリレートやアクリルモノマーなどが用いられる。
The radiation-polymerizable compound used in the present invention is not particularly limited and, for example, urethane acrylate, acrylic monomer and the like are used.

【0011】ウレタンアクリレートとしては、分子内に
2〜4個のアクリロイル基を有するウレタンアクリレー
トで、ジイソシアネート、ポリオール及びヒドロキシ
(メタ)アクリレートとにより合成される化合物であ
り、好ましくは2個のアクリロイル基を有するウレタン
アクリレートである。前記のイソシアネートとしては、
例えばトルエンジイソシアネート、ジフェニルメタンジ
イソシアネート、ヘキサメチレンジイソシアネート、フ
ェニレンジイソシアネート、ジシクロヘキシルメタンジ
イソシアネート、キシレンジイソシアネート、テトラメ
チルキシレンジイソシアネート、ナフタレンジイソシア
ネート等を挙げることができる。前記のポリオールとし
ては、例えばエチレングリコール、プロピレングリコー
ル、ブタンジオール、ヘキサンジオール等を挙げること
ができる。前記のヒドロキシ(メタ)アクリレートとし
ては、例えば、2−ヒドルキシエチル(メタ)アクリレ
ート、2−ヒドルキシプロピル(メタ)アクリレート等
を挙げることができる。
The urethane acrylate is a urethane acrylate having 2 to 4 acryloyl groups in the molecule and is a compound synthesized by diisocyanate, polyol and hydroxy (meth) acrylate, and preferably 2 acryloyl groups. It is a urethane acrylate that has. As the above-mentioned isocyanate,
For example, toluene diisocyanate, diphenylmethane diisocyanate, hexamethylene diisocyanate, phenylene diisocyanate, dicyclohexylmethane diisocyanate, xylene diisocyanate, tetramethyl xylene diisocyanate, naphthalene diisocyanate and the like can be mentioned. Examples of the polyol include ethylene glycol, propylene glycol, butanediol, hexanediol and the like. Examples of the hydroxy (meth) acrylate include 2-hydroxyethyl (meth) acrylate and 2-hydroxypropyl (meth) acrylate.

【0012】アクリレートモノマーとしては、例えばト
リメチロールプロパントリアクリレート、ペンタエリス
リトールトリアクリレート、ペンタエリスリトールトテ
トラアクリレート、ジペンタエリスリトールモノヒドロ
キシペンタアクリレート、ジペンタエリスリトールヘキ
サアクリレート等を挙げることができる。
Examples of the acrylate monomer include trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetrachloride, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate and the like.

【0013】本発明において用いられる放射線重合性重
合開始剤としては、特に限定されるものではなく、例え
ば、2,2−ジメトキシ−2−フェニルアセトフェノ
ン、1−ヒドロキシ−シクロヘキシル−フェニルケト
ン、2−メチル−1−〔4−(メチルチオ)フェニル〕
−2−モンフォニルプロパンなどが用いられる。放射線
重合性化合物、放射線重合性重合開始剤の混合割合は、
ベースポリマー100重量部に対して、放射線重合性化
合物が50〜200重量部、放射線重合性重合開始剤
0.03〜22.5重量部の混合割合である。放射線重
合性化合物の割合が50重量部未満であると硬化後の粘
着力の低下が十分でなくデバイスのピックアップが困難
になり、200重量部を越えると粘着剤層の凝集力が不
足し好ましくない。放射線重合性重合開始剤の割合が
0.03重量部未満であると紫外線及び/又は電子線照
射における放射線重合性化合物の硬化反応が乏しくなり
粘着力の低下が不十分となり好ましくなく、22.5重
量部を越えると熱あるいは蛍光灯下での安定性が悪くな
り好ましくない。
The radiation-polymerizable polymerization initiator used in the present invention is not particularly limited, and examples thereof include 2,2-dimethoxy-2-phenylacetophenone, 1-hydroxy-cyclohexyl-phenyl ketone and 2-methyl. -1- [4- (methylthio) phenyl]
2-Monfonyl propane or the like is used. The mixing ratio of the radiation-polymerizable compound and the radiation-polymerizable polymerization initiator is
The radiation-polymerizable compound is 50 to 200 parts by weight, and the radiation-polymerizable polymerization initiator is 0.03 to 22.5 parts by weight with respect to 100 parts by weight of the base polymer. If the proportion of the radiation-polymerizable compound is less than 50 parts by weight, the adhesive strength after curing will not be sufficiently reduced, making it difficult to pick up the device, and if it exceeds 200 parts by weight, the cohesive strength of the adhesive layer will be insufficient, which is not preferable. . If the proportion of the radiation-polymerizable polymerization initiator is less than 0.03 part by weight, the curing reaction of the radiation-polymerizable compound upon irradiation with ultraviolet rays and / or electron beams becomes poor, and the adhesive strength is insufficiently reduced, which is not preferable. If it exceeds the weight part, the stability under heat or under a fluorescent lamp is deteriorated, which is not preferable.

【0014】本発明において、前記粘着剤層の厚さは1
0〜40μm程度が好ましい。粘着剤層の厚みが10μ
m以下になると流動性の高い粘着剤層の厚みが薄いため
剥離フィルムを剥がした際の剥離状態がスムーズでなく
なるため機械的な外力が加わり結果帯電の発生量が大き
くなる。一方粘着剤層の厚みが40μm以上に厚くなる
と粘着剤の剥離表面と帯電処理を施した基材との距離が
大きくなるため発生した電荷の移動が阻害され結果帯電
量が大きくなる。
In the present invention, the thickness of the adhesive layer is 1
About 0 to 40 μm is preferable. Thickness of adhesive layer is 10μ
When the thickness is less than m, the pressure-sensitive adhesive layer having high fluidity is thin and the peeled state becomes unsmooth when the peeling film is peeled off, and a mechanical external force is applied, resulting in a large amount of electrification. On the other hand, when the thickness of the pressure-sensitive adhesive layer is thicker than 40 μm, the distance between the peeled surface of the pressure-sensitive adhesive and the base material subjected to the charging treatment becomes large, which hinders the movement of the generated charges, resulting in a large charge amount.

【0015】本発明において、前記粘着剤層を前記基材
上に形成し、半導体ウエハ加工用粘着紙とを製造するに
は、粘着剤層を構成する成分をそのまま、または適当な
有機溶剤により溶液化し、塗布又は散布等により基材上
に塗工し、例えば80〜100℃、30秒〜10分程度
加熱処理等により乾燥させることにより得ることができ
る。
In the present invention, the pressure-sensitive adhesive layer is formed on the base material to produce a pressure-sensitive adhesive paper for semiconductor wafer processing, in which the components constituting the pressure-sensitive adhesive layer are used as they are or in a solution with a suitable organic solvent. It can be obtained by subjecting it to a coating, spraying, or the like to apply it to a substrate, and then drying it by heating, for example, at 80 to 100 ° C. for about 30 seconds to 10 minutes.

【0016】本発明の半導体用粘着シートを使用するに
は公知の方法を用いることができ、例えば半導体加工用
粘着シートを半導体ウエハに貼り付けて固定した後、回
転丸刃で半導体デバイスを素子小片に切断する。その
後、前記加工用粘着シートの基材側から紫外線及び/又
は電子線を照射し、次いで専用治具を用いて前記加工用
粘着シート放射状に拡大しチップ間を一定間隔に広げた
後、デバイスをニードル等で突き上げるとともに、真空
コレット、エアピンセット等で吸着する方法等によりピ
ックアップすると同時にマウンティングまたはトレイに
収納すればよい。
A known method can be used to use the pressure-sensitive adhesive sheet for semiconductors of the present invention. For example, after the pressure-sensitive adhesive sheet for semiconductor processing is attached and fixed to a semiconductor wafer, the semiconductor device is cut into small pieces by a rotary round blade. Disconnect. After that, ultraviolet rays and / or electron beams are irradiated from the base material side of the processing pressure-sensitive adhesive sheet, and then the processing pressure-sensitive adhesive sheet is radially expanded using a special jig to spread the chips at regular intervals, and then the device is It may be pushed up with a needle or the like and picked up by a method such as suction with a vacuum collet or air tweezers, and at the same time stored in a mounting or tray.

【0017】[0017]

【実施例】以下本発明を実施例及び比較例により、更に
詳細に説明するが、本発明はこれらに限定するものでは
ない。 《実施例1》アクリル酸2−エチルヘキシル50重量
部、アクリル酸ブチル10重量部、酢酸ビニル37重量
部および、メタクリル酸2−ヒドロキシエチル3重量部
とを共重合して得られた重量平均分子量500000の
共重合体100重量部に対し、放射線重合化合物として
ジペンタエリスリトールモノヒドロキシペンタアクリレ
ートを100重量部、放射線重合開始剤として2,2−
ジメトキシ−2−フェニルアセトフェノンを8.3重量
部、ポリイソシアネート系架橋剤(コロネートL[日本
ポリウレタン製])6重量部を配合した粘着剤層となる
樹脂溶液を、剥離処理した厚さ38μmのポリエステル
フィルムに乾燥後の厚さが30μmになるように塗工
し、80℃5分間乾燥した。その後、ポリプロピレン1
00重量部と高分子型帯電防止剤であるポリエーテル/
ポリオレフィンブロックポリマー ペレスタット300
(三洋化成工業製)15重量部を2軸混練機で混練した
後、押出し機で押し出しし、作成した厚み150μmの
シートをラミネートし、半導体加工用粘着シートを作製
した。得られた半導体加工用粘着シートを室温で7日以
上成熟後、剥離フィルムを剥がした際の帯電圧の測定、
また実際に該シートを用いパッケージを組み立てパッケ
ージ破壊状況の有無を評価した。その結果を表1に示
す。
EXAMPLES The present invention will be described in more detail with reference to Examples and Comparative Examples, but the present invention is not limited thereto. <Example 1> 50 parts by weight of 2-ethylhexyl acrylate, 10 parts by weight of butyl acrylate, 37 parts by weight of vinyl acetate, and 3 parts by weight of 2-hydroxyethyl methacrylate were used to obtain a weight average molecular weight of 500,000. 100 parts by weight of the copolymer, 100 parts by weight of dipentaerythritol monohydroxypentaacrylate as a radiation-polymerizable compound and 2,2-
A polyester solution having a thickness of 38 μm, which was prepared by peeling a resin solution which was an adhesive layer containing 8.3 parts by weight of dimethoxy-2-phenylacetophenone and 6 parts by weight of a polyisocyanate crosslinking agent (Coronate L [manufactured by Nippon Polyurethane]). The film was applied so that the thickness after drying would be 30 μm, and dried at 80 ° C. for 5 minutes. Then polypropylene 1
00 parts by weight and polyether / a polymeric antistatic agent
Polyolefin block polymer Pelestat 300
15 parts by weight (manufactured by Sanyo Kasei Co., Ltd.) were kneaded by a twin-screw kneader and then extruded by an extruder, and the sheet having a thickness of 150 μm was laminated to produce an adhesive sheet for semiconductor processing. The obtained adhesive sheet for semiconductor processing was matured at room temperature for 7 days or more, and then the electrification voltage was measured when the release film was peeled off.
In addition, a package was actually assembled using the sheet, and the presence or absence of the package breakage condition was evaluated. The results are shown in Table 1.

【0018】《実施例2》粘着剤層の厚みが15μmで
あること以外は実施例1と同様の方法で試料を作製し、
実施例1と同様の項目について試験した。その結果を表
1に示す。
Example 2 A sample was prepared in the same manner as in Example 1 except that the pressure-sensitive adhesive layer had a thickness of 15 μm.
The same items as in Example 1 were tested. The results are shown in Table 1.

【0019】《比較例1》基材として帯電防止剤を添加
していないポリプロピレンシートを使用していること以
外は、実施例1と同様の方法で試料を作製し、実施例1
と同様の項目について試験した。その結果を表1に示
す。 《比較例2》粘着剤層の厚みが5μmであること以外は
実施例1と同様の方法で試料を作製し、実施例1と同様
の項目について試験した。その結果を表1に示す。 《比較例3》粘着剤層の厚みが50μmであること以外
は実施例1と同様の方法で試料を作製し、実施例1と同
様の項目について試験した。その結果を表1に示す。
Comparative Example 1 A sample was prepared in the same manner as in Example 1 except that a polypropylene sheet containing no antistatic agent was used as the substrate.
The same items as above were tested. The results are shown in Table 1. << Comparative Example 2 >> A sample was prepared in the same manner as in Example 1 except that the thickness of the pressure-sensitive adhesive layer was 5 μm, and the same items as in Example 1 were tested. The results are shown in Table 1. Comparative Example 3 A sample was prepared in the same manner as in Example 1 except that the pressure-sensitive adhesive layer had a thickness of 50 μm, and the same items as in Example 1 were tested. The results are shown in Table 1.

【0020】[0020]

【表1】 [Table 1]

【0021】尚、実施例及び比較例の評価は、以下の評
価方法を用いた。 ・剥離帯電の測定 帯電圧測定器としてSIMCO JAPAN製ELEC
TRO LOCATOR SS−2を使用し、15mm
幅の試料で100mm/sec.で剥離用フィルムを剥
離した際の粘着剤表面の帯電圧を測定した。 ・パッケージ破壊試験 タブレット化したエポキシ樹脂を用い、低圧トランスフ
ァー成形機にて、175℃、射出圧70kgf/cm
2 、保圧時間120秒の条件で半導体素子を80pQF
P(14×20×2.7mm厚)に成形した後、175
℃で8時間ポストキュアーして得た半導体装置を一般に
用いられている工程でリード加工、外装メッキした後、
素子の動作を確認した。全ての端子が問題なく作動する
ものを良品、正常に作動しない端子が含まれるものを不
良品とした。
The following evaluation methods were used to evaluate the examples and comparative examples.・ ELEC made by SIMCO JAPAN as a charging voltage measuring device for peeling electrification
15mm using TRO LOCATOR SS-2
100 mm / sec for the width sample. The electrification voltage on the surface of the pressure-sensitive adhesive when the peeling film was peeled off was measured.・ Package destruction test Using a tableted epoxy resin, low pressure transfer molding machine at 175 ℃, injection pressure 70kgf / cm
2 , 80pQF semiconductor device under the condition of holding pressure 120 seconds
175 after molding to P (14 x 20 x 2.7 mm thickness)
After the semiconductor device obtained by post-curing at 8 ° C. for 8 hours is subjected to lead processing and exterior plating in a generally used process,
The operation of the device was confirmed. Good products were those in which all terminals worked without problems, and defective products in which terminals did not work properly.

【0022】[0022]

【発明の効果】本発明の半導体加工用シートは、剥離用
のフィルムを剥がした際のシートの粘着面への帯電圧が
200V以下であることを特徴としており、半導体製造
工程中における帯電の発生を防止し、該帯電による半導
体デバイスの破壊および製品の劣化を防ぐことができ
る。
The semiconductor processing sheet of the present invention is characterized in that the voltage applied to the adhesive surface of the sheet when the peeling film is peeled off is 200 V or less, and the occurrence of electrification during the semiconductor manufacturing process. And the destruction of the semiconductor device and the deterioration of the product due to the charging can be prevented.

フロントページの続き Fターム(参考) 4J004 AA01 AA06 AA09 AA10 AA17 AB01 AB06 AB07 CA03 CA04 CA05 CA06 CA07 CA08 CC02 CC03 CD01 DB02 FA05 FA08 4J040 DB061 DE021 DF011 DF041 DF051 DF081 EF181 EF281 FA141 HA19 JA09 JB07 JB08 JB09 KA13 KA26 LA09 MB03 NA20 PA23 PA42 Continued front page    F-term (reference) 4J004 AA01 AA06 AA09 AA10 AA17                       AB01 AB06 AB07 CA03 CA04                       CA05 CA06 CA07 CA08 CC02                       CC03 CD01 DB02 FA05 FA08                 4J040 DB061 DE021 DF011 DF041                       DF051 DF081 EF181 EF281                       FA141 HA19 JA09 JB07                       JB08 JB09 KA13 KA26 LA09                       MB03 NA20 PA23 PA42

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 紫外線及び/又は電子線に対し透過性を
有する基材、ベースポリマーと放射線重合性化合物と放
射線重合性重合開始剤とからなる粘着剤層、並びに剥離
用フィルムからなる半導体加工用粘着シートにおいて、
該粘着剤層の厚みが10〜40μmであり、半導体加工
用粘着シートが帯電防止効果を有し、剥離用フィルムを
剥がした際のシートの粘着面への帯電圧が200V以下
であることを特徴とする半導体加工用粘着シート。
1. A semiconductor processing comprising a substrate having transparency to ultraviolet rays and / or electron beams, an adhesive layer comprising a base polymer, a radiation-polymerizable compound and a radiation-polymerizable polymerization initiator, and a peeling film. In the adhesive sheet,
The pressure-sensitive adhesive layer has a thickness of 10 to 40 μm, the semiconductor processing pressure-sensitive adhesive sheet has an antistatic effect, and the electrification voltage to the pressure-sensitive adhesive surface of the sheet when the peeling film is peeled off is 200 V or less. Adhesive sheet for semiconductor processing.
【請求項2】 該基材が帯電防止処理を施されている請
求項1記載の半導体加工用粘着シート。
2. The pressure-sensitive adhesive sheet for semiconductor processing according to claim 1, wherein the base material is subjected to an antistatic treatment.
JP2002085188A 2002-03-26 2002-03-26 Adhesive sheet used for processing semiconductor Pending JP2003282489A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002085188A JP2003282489A (en) 2002-03-26 2002-03-26 Adhesive sheet used for processing semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002085188A JP2003282489A (en) 2002-03-26 2002-03-26 Adhesive sheet used for processing semiconductor

Publications (1)

Publication Number Publication Date
JP2003282489A true JP2003282489A (en) 2003-10-03

Family

ID=29232235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002085188A Pending JP2003282489A (en) 2002-03-26 2002-03-26 Adhesive sheet used for processing semiconductor

Country Status (1)

Country Link
JP (1) JP2003282489A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005225068A (en) * 2004-02-13 2005-08-25 Gunze Ltd Manufacturing method of semiconductive substrate film for dicing
JP2005280211A (en) * 2004-03-30 2005-10-13 Gunze Ltd Base film for dicing
JP2006002140A (en) * 2004-05-20 2006-01-05 Saiden Chemical Industry Co Ltd Polymer composition for pressure-sensitive adhesive, pressure-sensitive adhesive composition for surface protective film, and the surface protective film
JP2006165071A (en) * 2004-12-02 2006-06-22 Achilles Corp Antistatic substrate film for semiconductor manufacturing tape
JP2007176989A (en) * 2005-12-27 2007-07-12 Sanyo Chem Ind Ltd Antistatic film for fixing electronic member
WO2008075570A1 (en) * 2006-12-18 2008-06-26 Nitto Denko Corporation Pressure-sensitive adhesive sheet
JP2008255345A (en) * 2007-03-12 2008-10-23 Furukawa Electric Co Ltd:The Pressure-sensitive adhesive tape for fixing semiconductor
JP2008280520A (en) * 2007-04-11 2008-11-20 Furukawa Electric Co Ltd:The Pressure-sensitive adhesive tape for fixing semiconductor
JP2010168541A (en) * 2008-12-22 2010-08-05 Nitto Denko Corp Pressure-sensitive adhesive tape or sheet
JP2014135467A (en) * 2012-12-10 2014-07-24 Nitto Denko Corp Dicing tape integrated adhesive sheet, method for manufacturing semiconductor device using dicing tape integrated adhesive sheet, and semiconductor device
JP2014133858A (en) * 2012-12-10 2014-07-24 Nitto Denko Corp Dicing tape integrated adhesive sheet, and manufacturing method of semiconductor device using dicing tape integrated adhesive sheet

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08245932A (en) * 1995-03-10 1996-09-24 Lintec Corp Antistatic adhesive sheet
JP2000260735A (en) * 1999-03-10 2000-09-22 Toyo Chem Co Ltd Sheet for fixing semiconductor wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08245932A (en) * 1995-03-10 1996-09-24 Lintec Corp Antistatic adhesive sheet
JP2000260735A (en) * 1999-03-10 2000-09-22 Toyo Chem Co Ltd Sheet for fixing semiconductor wafer

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005225068A (en) * 2004-02-13 2005-08-25 Gunze Ltd Manufacturing method of semiconductive substrate film for dicing
JP2005280211A (en) * 2004-03-30 2005-10-13 Gunze Ltd Base film for dicing
JP4563711B2 (en) * 2004-03-30 2010-10-13 グンゼ株式会社 Substrate film for dicing
JP2006002140A (en) * 2004-05-20 2006-01-05 Saiden Chemical Industry Co Ltd Polymer composition for pressure-sensitive adhesive, pressure-sensitive adhesive composition for surface protective film, and the surface protective film
JP4526937B2 (en) * 2004-12-02 2010-08-18 アキレス株式会社 Antistatic base film for semiconductor manufacturing tape
JP2006165071A (en) * 2004-12-02 2006-06-22 Achilles Corp Antistatic substrate film for semiconductor manufacturing tape
JP2007176989A (en) * 2005-12-27 2007-07-12 Sanyo Chem Ind Ltd Antistatic film for fixing electronic member
JP2008174727A (en) * 2006-12-18 2008-07-31 Nitto Denko Corp Pressure-sensitive adhesive sheet
WO2008075570A1 (en) * 2006-12-18 2008-06-26 Nitto Denko Corporation Pressure-sensitive adhesive sheet
KR101437709B1 (en) * 2006-12-18 2014-09-03 닛토덴코 가부시키가이샤 Pressure-sensitive adhesive sheet
JP2008255345A (en) * 2007-03-12 2008-10-23 Furukawa Electric Co Ltd:The Pressure-sensitive adhesive tape for fixing semiconductor
JP2008280520A (en) * 2007-04-11 2008-11-20 Furukawa Electric Co Ltd:The Pressure-sensitive adhesive tape for fixing semiconductor
JP2010168541A (en) * 2008-12-22 2010-08-05 Nitto Denko Corp Pressure-sensitive adhesive tape or sheet
JP2014135467A (en) * 2012-12-10 2014-07-24 Nitto Denko Corp Dicing tape integrated adhesive sheet, method for manufacturing semiconductor device using dicing tape integrated adhesive sheet, and semiconductor device
JP2014133858A (en) * 2012-12-10 2014-07-24 Nitto Denko Corp Dicing tape integrated adhesive sheet, and manufacturing method of semiconductor device using dicing tape integrated adhesive sheet

Similar Documents

Publication Publication Date Title
KR101250149B1 (en) Method for peeling and removing dicing surface protection tape from diced body
KR100718364B1 (en) Energy-beam-curable thermal-releasable pressure-sensitive adhesive sheet and method for producing cut pieces using the same
TWI414578B (en) Adhesive sheet for processing semiconductor substrates
JP2010053192A (en) Pressure-sensitive adhesive tape or sheet
JP2003282489A (en) Adhesive sheet used for processing semiconductor
JPH11269436A (en) Antistatic pressure-sensitive adhesive sheet
KR20180105568A (en) Adhesive tape for dicing, method for manufacturing the adhesive tape and method for manufacturing semiconductor chip
JP4259050B2 (en) Adhesive sheet for semiconductor substrate processing
KR101888198B1 (en) Radiation-curable pressure-sensitive adhesive composition and pressure-sensitive adhesive sheet
JP2002235055A (en) Dicing pressure-sensitive adhesive sheet
TW201712087A (en) Adhesive tape for semiconductor processing and method for producing semiconductor chip or semiconductor component using same
JP4608759B2 (en) Adhesive sheet for semiconductor wafer processing
JP2002285134A (en) Adhesive sheet for processing semiconductor
TWI791485B (en) Adhesive sheet for stealth dicing and method for manufacturing semiconductor device
JP5583080B2 (en) Wafer processing tape and semiconductor processing method using the same
JP2010168541A (en) Pressure-sensitive adhesive tape or sheet
JP2005235795A (en) Adhesive tape for processing semiconductor wafer
JP2003268322A (en) Adhesive sheet for processing semiconductor board
JPH1161065A (en) Pressure-sensitive adhesive sheet for semiconductor wafer
JP2004087634A (en) Adhesive tape for working semiconductor substrate
JP4310932B2 (en) Adhesive sheet for semiconductor substrate processing
JP2000281993A (en) Pressure-sensitive adhesive sheet for use in processing semiconductor wafer
JP2000328023A (en) Pressure-sensitive adhesive sheet
JP2006036834A (en) Adhesive tape for processing semiconductor wafer
JPH10310748A (en) Tacky sheet for processing semiconductor wafer

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050207

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080228

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080304

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080404

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080805