JP2000243687A - Apparatus and method for regulating temperature of substrate, and for processing substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To eliminate the generation of any transcription-trace on a substrate and make unnecessary the rearrangement of its supporting pins even when its size and its product-region are varied, by providing a temperature regulating plate for regulating its temperature through putting it thereon, and by providing a displacement means for altering its putting position on the temperature regulating plate. SOLUTION: To provide on the periphery of a substrate a plurality of displacement means as the ones for altering the putting position of the substrate, in the eight places of the vicinities of the corners of the substrate put on a hot plate 31, movement members 46 for moving the substrate are provided. A holding member 47 for holding an axis 89 of the movement members 46 is made movable up and down by coupling it to an elevating mechanism 90 for the displacement means, and the speed of the elevating mechanism 90 is made variable by a stepping motor 48. Further, it is configured out of driving and driven pulleys 49, 50 and a timing belt 51. By the normal and reverse rotations of the stepping motor 48, the movement members 46 and the hot plate 31 are moved up and down relatively to each other. Therefore, by the normal and reverse rotations of a stepping motor 52, the respective movement members 46 can rotate normally and reversely around their eccentric axes.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate temperature control apparatus, a substrate temperature control method, a substrate processing apparatus, and a substrate processing method for heat-treating an LCD substrate used for, for example, a semiconductor wafer or a liquid crystal display. .

[0002]

2. Description of the Related Art In a manufacturing process of a liquid crystal display (LCD) device, an IT
A series of processes for forming O thin films and electrode patterns, etc., using a photolithography technique similar to that used in semiconductor manufacturing processes to reduce exposure of circuit patterns and the like, transfer them to photoresist, and develop them. Is applied.

In such a manufacturing process, a rectangular LCD substrate, which is an object to be processed, is cleaned by a cleaning device, and then the LC substrate is processed.
Apply hydrophobic treatment to the D substrate with an adhesion processing device,
After being cooled by the cooling processing device, a photoresist film is applied and formed by a resist coating device. After that, the photoresist film is heated by a heat treatment device, subjected to a pre-bake treatment, and then cooled. The predetermined pattern is exposed by an exposure device, and the exposed LCD substrate is developed by applying a developing solution by a developing device. After that, the developer is washed away with a rinse solution, post-baking is performed, and a series of steps is completed.

Conventionally, the above-mentioned heat treatment apparatus is disclosed in, for example,
No. 313,855, which uses an apparatus having a configuration as described in JP-A No. 313855, a heating plate for mounting and heating an LCD substrate, a support pin penetrating the heating plate to support the LCD substrate, and an elevating device for elevating the support pin. A device having a mechanism and a protrusion (proximity pin) provided on the upper surface of the heating plate and supporting the LCD substrate is used.

In this heat treatment apparatus, an LCD substrate carried in by a transport mechanism (not shown) is received by support pins projecting above a heating plate. Then, after the support pins are lowered and the LCD substrate is placed on the protrusions provided on the heating plate, the heating plate is caused to generate heat, and the heating plate is heated to a predetermined temperature, for example, 50 degrees.
The substrate is heated to a temperature of 180 to 180 ° C. to perform a heat treatment on the LCD substrate.

[0006]

However, in recent years, a high-sensitivity resist solution has been used in accordance with high definition of a screen, and the line width of a circuit pattern formed on an LCD substrate has been reduced to 3 μm, which is smaller than the conventional one. Has become.

In the above heat treatment apparatus, the thickness of the resist solution applied on the substrate changes due to heat conduction from the support pins and the proximity pins, and the resist solution is formed on the substrate after the exposure and development processing. When the line width of the circuit pattern changes due to heat conduction from the support pins and the proximity pins, these transfer traces are generated. This is because the temperature of the LCD substrate with which the support pins and the proximity pins come into contact is higher than the temperatures of other parts.

This transfer mark may occur after development.
The transfer mark can be confirmed even after the product is formed, which causes a product defect.

Therefore, in order to eliminate the transfer mark, a contact portion such as a support pin or a proximity pin is provided outside the product area of the LCD substrate, and the contact portion with the LCD substrate is set so that the transfer mark is outside the product area. Can be placed,
It is necessary to rearrange the arrangement of the support pins and the proximity pins every time the size of the LCD substrate and its product area are different, and the pin arrangement cannot be determined unless the product area of the LCD substrate is determined. There are problems such as an increase in design man-hours.

The present invention has been made in view of the above circumstances, and is free from transfer marks on an LCD substrate and has a low L level.
It is an object of the present invention to provide a substrate temperature control apparatus, a substrate temperature control method, a substrate processing apparatus, and a substrate processing method that do not require rearranging the arrangement of support pins and proximity pins even if the size and product area of a CD substrate are different. Is what you do.

[0011]

Means for Solving the Problems To solve this problem, the invention according to claim 1 comprises a temperature control panel for mounting a substrate and controlling the temperature;
A displacement means for changing a mounting position of the substrate on the temperature control panel.

According to a second aspect of the present invention, there is provided a substrate temperature control apparatus having a support means for projecting from a temperature control panel and supporting a substrate.

According to a third aspect of the present invention, there is provided a substrate temperature adjusting apparatus, wherein a suction hole for sucking and holding a substrate is formed on a substrate mounting surface of the temperature adjusting plate.

According to a fourth aspect of the present invention, the substrate is formed of a semiconductor or an insulating material, and static elimination means for removing charges on a mounting surface of the substrate is disposed near the temperature control panel. Is a substrate temperature control device.

According to a fifth aspect of the present invention, there is provided the substrate temperature controlling apparatus, wherein a plurality of displacement means are provided around the substrate and have a moving member for moving the substrate.

According to a sixth aspect of the present invention, there is provided a substrate temperature control apparatus, wherein the displacement means and the support means include a lifting means for raising and lowering the substrate with respect to the temperature control panel.

According to a seventh aspect of the present invention, the elevating means is provided with a position detecting means for detecting an elevating position of the substrate, and an electric power supply for varying the amount of electric power supplied to the temperature control panel based on the position detecting means. A substrate temperature controller having a control unit.

An eighth aspect of the present invention is the substrate temperature control apparatus, wherein the elevating means is provided with a variable mechanism for changing the elevating speed of the substrate.

A ninth aspect of the present invention is the substrate temperature controlling apparatus, wherein the displacement means has the moving member and a rotating means for rotating the moving member.

According to a tenth aspect of the present invention, the moving member has a circular outer periphery in contact with the substrate, and the rotating means is attached to an eccentric shaft of the moving member. Device.

According to an eleventh aspect of the present invention, in the moving member, an outer periphery of the moving member which is in contact with the substrate is formed in an elliptical shape or a substantially regular polygonal shape.
The rotating means is attached to a central axis of the moving member, and is a substrate temperature controlling apparatus.

A twelfth aspect of the present invention is the substrate temperature controlling apparatus, wherein the displacement means has the moving member and a linear moving means for moving the moving member in a linear direction.

According to a thirteenth aspect of the present invention, there is provided a position detecting means for detecting a vertical position of the substrate, and a speed control unit for controlling the rotation speed of the rotating means or the driving speed of the driving means based on the position detecting means. It is a substrate temperature control apparatus characterized by having.

According to a fourteenth aspect of the present invention, the step of mounting the substrate on a temperature control panel, the method of controlling the temperature of the substrate on the temperature control panel,
Changing the mounting position of the substrate on the temperature control plate.

A fifteenth aspect of the present invention is a method for controlling a temperature of a substrate, the method including a step of separating a substrate from a temperature control panel and removing charges on a mounting surface of the substrate.

The invention of claim 16 is a first and second temperature control apparatus having a temperature control panel for mounting a substrate and controlling the temperature, and supporting means projecting above the temperature control panel and supporting the substrate. And, having a transfer arm to transfer the substrate from the first temperature control device to the second temperature control device, the arrangement of the support member for the substrate of the first temperature control device and the second temperature control device is different, The transfer arm is a substrate processing apparatus having transfer control means for receiving the substrate temperature-controlled by the first temperature control device and mounting the substrate on the second temperature control device.

According to a seventeenth aspect of the present invention, there is provided a temperature control panel for mounting a substrate and controlling the temperature, a temperature control device having a supporting means protruding above the temperature control panel and supporting the substrate, and transporting the substrate. The transfer arm receives the substrate processed by the temperature control device, and when the substrate is placed on the temperature control device again, the relative positions of the temperature control device and the substrate are different. And a transfer control unit for placing the substrate at a position.

[0028] The invention according to claim 18 is a step of placing a substrate on the first support means and controlling the temperature, and determining a relative position of the first support means and the substrate by a transfer arm for transferring the substrate. And mounting the substrate on different second support means and adjusting the temperature.

According to the first and fourteenth aspects of the present invention, since the temperature of the substrate is controlled and the mounting position of the substrate is changed, the heat transmitted to the substrate is widely dispersed, the temperature distribution of the substrate becomes uniform, and the transfer is performed. No traces occur.

According to the second aspect of the present invention, since the position of the substrate is changed on the support means, the range in which the substrate is rubbed is small, and the generation of electric charges due to friction on the back surface of the substrate and the surface of the temperature control panel can be suppressed. .

According to the third aspect of the present invention, it is possible to control the temperature while sucking and holding the substrate on the temperature control panel, to conduct a large amount of heat from the surface of the temperature control panel to the substrate, and to improve the temperature distribution of the substrate. Become.

According to the fourth and fifteenth aspects of the present invention, the charge generated on the mounting surface of the substrate can be further removed, and the electrostatic breakdown of the substrate can be prevented.

According to the fifth aspect of the present invention, since a plurality of displacement means are arranged around the substrate, the position of the substrate can be surely moved, and a plurality of displacement means are arranged around the substrate.
The substrate does not fall off the support means.

According to the sixth aspect of the present invention, the substrate can be moved up and down while changing the support position of the substrate, and the heat transmitted to the substrate when the substrate is moved up and down is dispersed over a wide range.

According to the seventh aspect of the present invention, the position of the elevating means is detected, and when the elevating means starts lowering, the electric power supplied to the temperature control panel is increased by a predetermined amount for a predetermined time. The supply control unit issues an instruction, and the temperature of the temperature control panel increases by a predetermined time for a predetermined time, so that the processing time can be further reduced.

According to the eighth aspect of the present invention, the substrate is gradually moved toward and away from the temperature control panel so that the substrate does not warp.
The amount of heat transmitted to the substrate is gradually changed. By gradually moving the substrate away from the temperature control panel in this way, the temperature difference between the front and back of the substrate can be reduced to reduce the elongation due to the temperature difference, the substrate can be heated without warping the substrate, The intervals between the boards are the same in the substrate plane, and the temperature distribution of the substrate can be made as uniform as possible.

According to the ninth and tenth aspects of the present invention, it is possible to change the mounting position of the substrate during the temperature control processing of the substrate by rotating the moving member itself.

According to the eleventh aspect of the present invention, the material of the moving member can be reduced as compared with the case where the shape of the moving member is circular, the moving member can be reduced in weight, and the weight of the substrate temperature controller can be reduced. In addition, since the moving member rotates about the central axis of the moving member, the moving member can be rotated in a more balanced and smoother manner than when the moving member has a circular shape.

According to the twelfth aspect of the present invention, when the mounting position of the substrate is moved in the linear direction during the temperature control processing of the substrate, the end of the substrate and the moving member are hardly rubbed while the substrate is being moved. The generation of minute dust can be reduced.

According to the thirteenth aspect of the present invention, as the support means is lowered, the temperature of the substrate rises, and the temperature difference between the tip of the support means and the substrate disappears, so that the position of the support means is detected and the position of the support means is detected. As the value becomes lower, the rotational speed of the moving member is reduced to a predetermined speed in accordance with an instruction from the control unit.
Even if the moving speed of the substrate is reduced, it is effective for transfer. In addition, by reducing the moving speed of the substrate, the possibility that charges are generated on the back surface of the substrate can be reduced.

According to the sixteenth and eighteenth aspects of the invention, the temperature is controlled by the first temperature control device, and then the temperature is controlled by the second temperature control device. Since the arrangement of the support means for the substrate with the temperature control device is different, their arrangement moves relatively to the substrate, the temperature on the substrate at the contact portion with the substrate becomes equal to that of the other portions, and the transfer mark Does not occur.

According to the seventeenth aspect of the present invention, the arrangement of the substrate supporting portion of the temperature controller moves relative to the substrate, and the temperature on the substrate at the contact portion with the substrate becomes equal to that of the other portions. No transfer marks are generated.

[0043]

Next, an embodiment of the present invention will be described in detail. In this embodiment, the present invention is applied to an LCD.
A case where the present invention is applied to a coating and developing processing system for a substrate G will be described.

As shown in FIG. 1, the coating and developing system 1 includes a loader unit 2 for loading and unloading an LCD substrate G (hereinafter, referred to as a substrate) as an object to be processed, and a first processing unit 3 for the substrate G. , And a second processing unit 5 connected to the first processing unit 3 via the relay unit 4. Note that an exposure device 6 for exposing a predetermined fine pattern on the resist film via the transfer unit 7 can be connected to the second processing unit 5.

The loader section 2 is provided with a cassette station 10 which includes a cassette 11 for storing unprocessed substrates G and a cassette 12 for storing processed substrates G.
And a plurality of them can be freely mounted. Cassettes 10, 11
And a substrate loading / unloading tweezers 13 which can be moved and rotated (θ) in the horizontal (X, Y) direction and the vertical (Z) direction so as to carry in and out the substrate G.

The first processing unit 3 includes a brush for cleaning the substrate G on one side of a transfer path 16 of a main arm 15 that can move in the X, Y, and Z directions and can rotate θ by a transfer arm. A cleaning device 17 and a developing device 18 are arranged side by side, an adhesion processing device 19 for hydrophobizing the surface of the substrate G on the other side of the transport path 11, and a substrate of the present invention for performing post-baking for heating after the developing process. For example, a heat treatment apparatus 20 as a temperature control apparatus and a cooling processing apparatus 21 for cooling a substrate G to a predetermined temperature are arranged in multiple stages.

On the other hand, like the first processing unit 3, the second processing unit 5 has a main arm 22 that can move in the X, Y, and Z directions and can rotate by θ, for example. A heat treatment according to the present invention in which a coating / peripheral edge removing device 24 is arranged on one side of a transfer path 23 of the main arm 22 and a pre-bake for heating the substrate G after applying a resist liquid on the other side of the transfer path 23. The apparatus 20 and the cooling processing apparatuses 21 are arranged in multiple stages.

The transfer section 7 includes a cassette 25 for temporarily holding the substrate G, and a cassette 25
Tweezers 26 for transferring the substrate G in and out of the
And a transfer table 27 for the substrate G.

The coating / developing processing system having the above-mentioned structure is shown in FIG.
, The substrate loading / unloading unit 2, the first processing unit 3,
For each of the second processing unit 5 and the transfer unit 7, a unit control unit, for example, the control unit 59 of the substrate loading / unloading unit, the control unit 60 of the first processing unit, the control unit 61 of the second processing unit, and the control unit 61 of the transfer unit The operations are individually controlled by the control unit 62, and the control units of these processing units are centrally controlled by the main control unit 63. The processing in each processing unit in each of the processing units 3 and 5 is performed by extracting the recipe stored in the recipe information storage unit 64 by the recipe control unit 65 based on the information of the substrate sent from the main control unit 63, and loading / unloading. Loader control unit 5
9, first processing unit control unit 60, second processing unit control unit 6
1. The processing is sent to the transfer section control section 62, and processing corresponding to each substrate is performed in each processing mechanism, for example, the pre-bake mechanism 74 or the post-bake mechanism 69.

In the coating and developing system 1 configured as described above, the unprocessed substrate G accommodated in the cassette 11 is taken out by the loading / unloading tweezers 13 of the loader unit 2 and then the first processing unit 3 And transferred to the brush cleaning device 17. The substrate G that has been brush-cleaned in the brush cleaning device 17 is subjected to a hydrophobic treatment in an adhesion processing device 19 and cooled in a cooling processing device 21.
Placed on top.

The main arm 22 of the second processing unit 5 receives the photoresist film, that is, a photoresist film, that is, a photosensitive film is applied and formed by a resist coating device 31, and subsequently, the unnecessary resist film around the substrate G is removed by a peripheral edge removing device 30. Is removed. Then, this photoresist film is applied to the heat treatment apparatus 20.
Then, after baking processing is performed and cooled by the cooling processing device 21, a predetermined pattern is exposed by the exposure device 6. The substrate G after the exposure is the developing device 18.
After being transported into the developing device and developed by the developing solution, the developing solution is washed away by the rinsing solution, and the developing process is completed. afterwards,
The substrate G, which has been heated and baked by the heat treatment apparatus 20 and cooled by the cooling processing apparatus 21, is stored in the cassette 12 of the loader unit 1, and a series of processing is completed.

Next, the structure of the substrate temperature controller of the present invention used in the LCD substrate coating and developing system 1 will be described.

As shown in FIG. 3, the heat treatment apparatus 20 has, for example, a hot plate 31 as a temperature control panel for controlling the temperature with the substrate G placed thereon, and a hot plate 31 for forming a processing space 88 between the hot plate 31. A cover member 32 is arranged to cover the upper part. An openable and closable shutter member 33 for forming a processing space around the hot plate 31 is arranged, and is connected to a shutter member elevating mechanism, for example, a cylinder 86. The cover member 32
An exhaust port (not shown) is provided at the center of the ceiling of the, and the solvent evaporated during the baking process is discharged from the processing space.

A heater (heating means) for heating the substrate G through the hot plate 31 by heating the hot plate 31 and a temperature sensor (not shown) are embedded inside the hot plate 31. The temperature can be set to a predetermined heating temperature such as 50 ° C. to 180 ° C. by a command from, for example, the first processing unit control unit 60 or the second processing unit control unit 61 which is also a power supply control unit. It is configured. Further, a plurality of suction holes 45 are provided on the upper surface of the hot plate 31 as shown in FIG. 4, and the substrate G can be placed on the hot plate and suction-held. Note that a rectangular suction groove may be provided on the upper surface of the hot plate 31 instead of the intake hole.

A plurality of displacement means for changing the mounting position of the substrate are provided around the substrate, for example, near the corner of the substrate when the substrate G is mounted on the hot plate 31, as shown in FIG.
As shown in FIG. 7, a moving member 46 for moving, for example, eight substrates is provided. A shaft 89 is provided below the moving member 46.
The holding member 47 for holding the shaft 89 is connected to, for example, an elevating mechanism 90 which is an elevating means of a displacing means, and is configured to be able to move up and down, and to be able to move up and down relatively to the hot plate. The elevating mechanism 90 is a variable mechanism that changes the elevating speed, for example, a stepping motor 48, a driving pulley 49 driven by the stepping motor, a driven pulley 50 disposed above the driving pulley, a driving pulley 49 and a driven pulley 50. It is constituted by a timing belt 51 which is stretched over, and the holding member 47 is fastened to the timing belt 51. Therefore, the moving member 46 and the hot plate 31 can be relatively moved up and down by forward and reverse rotation of the stepping motor 48. The moving member 46 is connected to a rotating mechanism, for example, a rotating mechanism 91. The rotation mechanism 91 is a variable mechanism that changes the rotation speed, for example, the stepping motor 5
2, a drive pulley 53 driven by the stepping motor 52, and a shaft 89 provided below each moving member 46.
, A driven pulley 54, and a drive belt 53 and a timing belt 55 stretched over the driven pulley 54. Therefore, when the stepping motor 52 is rotated forward and backward, the moving member 46 can be rotated forward and backward with respect to the eccentric shaft 56 of each moving member 46. In the case where the outer dimensions of the substrate G change, it can be dealt with only by changing the size of the moving member 46. As shown in FIG.
In the shape of No. 6, the outer periphery in contact with the substrate G is formed in a circular shape, and a shaft 89 is provided around the eccentric shaft 56. Further, when the substrate G is located above the moving member 46 and the moving member 46 is lifted up from that state and disposed around the substrate, the substrate G
The cross-sectional shape of the moving member 46 is trapezoidal at the top so as to easily enter the inside of the moving member 46.

As a supporting means for supporting the substrate G,
For example, support pins 35 are provided. As shown in FIGS. 3 and 4, for example, nine through holes 34 are provided in the hot plate, and the support pins 35 are inserted into these through holes 34. The holding member 40 for holding the nine support pins 35 is connected to elevating means for the support member, for example, an elevating mechanism 92, so that it can be moved up and down, and the support pin 35 can be inserted into the through hole of the hot plate and can move up and down. Have been. In this case, the elevating mechanism 92 includes a stepping motor 36 that is a variable mechanism for changing the elevating speed and the stepping motor 36.
, A driven pulley 38 disposed above the driven pulley 37, and a timing belt 39 laid over the driven pulley 37 and the driven pulley 38, and the holding member 40 is a timing belt 39. Has been concluded. Therefore, the support pin 35 and the hot plate 31 can be relatively moved up and down by forward and reverse rotation of the stepping motor 36.

As another supporting means for supporting the substrate G, there are a plurality of projections 35 a provided on the upper surface of the hot plate 31.

For example, the stepping motors 36 and 48, as the means for detecting the position of the displacement means and the support means, can determine the rotation angles of the output shafts of the stepping motors 36 and 48 in accordance with the number of pulses sent to the stepping motors.
The rotation angle of the output shaft from the number of pulses sent to the stepping motors 36 and 48, and the elevation position of the displacement unit and the support unit from the rotation angle of the output shaft are sent to the first or second processing unit control units 60 and 61. And the position of the vertical movement of the displacement means and the support means can be detected. Alternatively, the output shafts of the stepping motors 36 and 48 are provided at equal angular intervals,
Attach a disk with multiple small windows of the same shape that are provided for each degree, and install optical sensors of light emitting and receiving type before and after the disk,
The optical sensor is arranged so that the optical axis of the optical sensor passes through the small window, the position of the small window moves when the output shaft rotates, and the optical axis is blocked when rotated by 10 degrees, and the number of times the optical axis is blocked The rotation angle of the output shaft and the vertical position of the displacement means and the support means from the rotation angle of the output shaft are calculated by the first or second processing unit control units 60 and 61, and the displacement means and the support means Can be detected.

Further, as shown in FIG.
Outside the opening 57 formed when 3 is lowered, for example, an ionizer 58 is disposed as a static eliminator for removing the charge on the mounting surface of the substrate G. In the ionizer 58, circular gas discharge ports (not shown) are provided at equal intervals in the horizontal direction longer than the long side of the substrate G, and a discharge electrode (not shown) is provided at the center of the gas discharge ports. It is charged on the mounting surface of the substrate G and the back surface of the substrate G by being sprayed on the mounting surface of the substrate G and the back surface of the substrate G with the flow of air, nitrogen gas or other inert gas discharged from the gas discharge port. Removed charge.

Next, the operation in the case where the substrate G is subjected to the heat treatment using the heat treatment apparatus 20 of the present invention configured as described above will be described. Here, for example, a heat treatment apparatus in the first processing unit will be described. First, the hot plate 31 is set in advance to a predetermined temperature of, for example, about 50 ° C. to 180 ° C. The stepping motor 36 of the elevating mechanism of the support pin 35 is driven to the substrate transfer position with the main arm 15 to raise the support pin 35, and the stepping motor 48 of the elevating mechanism of the moving member 46 is driven to a position where it does not interfere with the transfer arm. With the moving member 46 raised, the shutter member is driven down by the air cylinder 86 of the opening / closing mechanism to form openings 57 and 87 between the lower surface of the cover member and the upper end of the shutter member. The main arm 15 holding the substrate G is moved in a horizontal direction to a predetermined position through the opening 87, the main arm 15 is lowered, and then the main arm 15 is retracted to place the substrate G on the support pins 35. .

After the main arm 15 is retracted from the heat treatment apparatus, the stepping motor 48 is driven up to a height at which the guide member 46 covers the periphery of the substrate G,
Are arranged around the substrate G. Since the moving member 46 rotates about the eccentric axis, the initial setting angle in the horizontal plane is predetermined, and the main arm 15 is connected to the support pin 3.
5 corresponds to the position of the substrate G placed on the substrate 5, and since the cross-sectional shape of the moving member 46 is trapezoidal at the top, the substrate G moves when the moving member 46 rises to the substrate holding height. It can be easily located inside the member.

After a predetermined time from the end of the ascent of the moving member 46, the stepping motor 52 of the driving mechanism for driving the moving member 46 in the horizontal direction is driven to move the moving member 46 forward about the respective eccentric shafts 56 in the horizontal plane. The reverse rotation is started, and the substrate G is moved on the support pins 35 in a horizontal plane. Since the position for supporting the substrate G changes with time in the horizontal direction and the heat transmitted from the support pins 35 serving as the substrate support is dispersed over a wide range of the substrate G, the temperature of the substrate near the support pins 35 serving as the substrate support is increased. Becomes equal to the temperature of the other portion of the substrate G, the temperature distribution of the substrate becomes uniform, and the transfer is effective.

Further, since the position of the substrate G is changed on the support pins 35, the range in which the substrate G is rubbed is small, so that the generation of electric charge due to friction on the substrate G and the surface of the hot plate 31 can be suppressed to a level that causes no problem. Further, since the plurality of moving members 46 are arranged around the substrate, the position of the substrate G can be surely moved without the substrate G falling off the support pins 35.

Then, the shutter member 33 is raised until an air inlet having a predetermined gap is provided between the lower surface of the cover member 32 and the upper end of the shutter member 33 to form a processing space.

While the moving member 46 is rotated forward and backward in the horizontal plane, the support pins 35 and the guide member 46 are lowered stepwise so that warping of the substrate G due to a difference in temperature between the front and back of the substrate G does not occur. Bake) and heat gradually. By gradually lowering the substrate G, the temperature difference between the front and back surfaces of the substrate G can be reduced to reduce the elongation due to the temperature difference, the substrate G can be heated without warping the substrate G, and the distance between the substrate G and the mounting table can be reduced. The temperature distribution becomes constant within the substrate surface, and the temperature distribution of the substrate G can be made as uniform as possible.

The position of the support pin 35 is detected and the support pin 3 is detected.
When the position 5 starts to lower, the control unit 60 issues an instruction to increase the amount of power supplied to the hot plate 31 by a predetermined amount for a predetermined time, and the temperature of the hot plate 31 is increased by a predetermined amount for a predetermined time. The temperature rises and the processing time can be reduced.

As the support pins 35 are lowered, the temperature of the substrate G rises, and the temperature difference between the tip of the support pins 35 and the substrate G disappears. Therefore, the position of the support pins 35 is detected, and the position of the support pins 35 decreases. Accordingly, the rotation speed of the moving member 46 is reduced to a predetermined speed in accordance with an instruction from the control unit 60. Even if the swing speed of the substrate G is reduced, it is effective for transfer. Further, by reducing the swing speed of the substrate G, the possibility of generating charges on the back surface of the substrate G can be reduced.

When the tip of the support pin 35 is lower than the projection 35a, the substrate G is placed on the projection 92 and a heating process is performed for a predetermined time. Even after the substrate G is placed on the projection 92, the moving member 46 continues to rotate forward and backward in the horizontal plane and swings the substrate G.

After the elapse of a predetermined heating time, the photoresist film is dry. Since the transfer due to the heat treatment apparatus does not occur thereafter, the rotation of the moving member 46 is stopped and the movement of the substrate G is stopped. Stop. Thereafter, the shutter member 33 is lowered to form the openings 57 and 87, and the supply of ions from the ionizer for static elimination to the substrate G is started. Thereafter, the support pins 35 are maintained while the supply of ions is continued.
Rise gradually. With the same logic as the capacitor, the charged voltage increases as the substrate G rises and moves away from the hot plate 31. Therefore, the substrate G is slowly raised or stopped at a speed of about 0.5 to 5 mm / sec. In the state where G is close to the hot plate 31, the charge on the back surface of the substrate and the surface of the hot plate 31 are removed. By removing the charge, the substrate G and the hot plate 31 are removed.
Particles are attracted to the surface of the substrate G, and the particles do not disturb the temperature distribution of the substrate G, which is effective for transfer. In addition, it is possible to prevent the circuit pattern on the substrate from being destroyed by sparking due to the electric charge.

Thereafter, the support pin 35 is
And the supply of ions from the ionizer 58 is stopped.

The main arm 15 is caused to enter the predetermined position in the horizontal direction from the opening 87, the main arm 15 is raised, and then retracted, and the substrate G is carried out of the heat treatment apparatus.

While the substrate G swings in a horizontal plane while in the heat treatment apparatus, the portion supporting the substrate G changes with time, so that the temperature change near the supporting portion of the substrate G is different from that of other portions. And so-called transfer marks do not occur.

The moving member 46 has a circular outer periphery in contact with the substrate G, and has an axis 89 about the eccentric axis 56.
However, it goes without saying that the moving member 46 may have an ellipse or an approximately regular polygonal outer periphery in contact with the substrate G, and the axis 89 may be provided around the central axis.
In this case, the outer dimensions of the substrate G are considerably reduced, and the shaft 8
Even when the distance from the substrate 9 to the end of the substrate G is long, the material of the moving member 46 is smaller than in the case of a circular shape, so that the moving member can be reduced in weight and the heat treatment apparatus can be reduced in weight. In addition, since the moving member 46 rotates about the center axis of the moving member 46, the rotation can be performed in a well-balanced and smoother manner.

Although the rotating means for rotating the moving member in the normal and reverse directions is provided, linear moving means for moving the moving member in a linear direction is provided, and the substrate G is swung in a horizontal plane by linearly moving the moving member. Needless to say, it may be moved.

In this case, as shown in FIG.
A shaft 93 is provided below the shaft 93, and the shaft 93 is held by the holding member 94. The holding member 94 is connected to the holding member 96 through the guide 95, and the holding member 94 and the holding member 96 can relatively linearly move. The holding member 9 is provided on the holding member 96.
4, a driving pulley 98 driven by the stepping motor, a driven pulley 99 disposed to the right of the driving pulley 98, and a timing belt 100 wound around the driving pulley 98 and the driven pulley 99. Provided. Accordingly, the holding member 94 moves in the linear direction by the forward / reverse rotation of the stepping motor 97, the moving member 46 moves in the linear direction, and the substrate G swings.

The holding member 96 is connected to, for example, an elevating mechanism 90 which is an elevating means of the displacing means, and is configured to be capable of elevating and lowering relative to the hot plate 31. The elevating mechanism 90 is a variable mechanism that changes the elevating speed, for example, a stepping motor 48, a driving pulley 49 driven by the stepping motor, a driven pulley 50 disposed above the driving pulley, a driving pulley 49 and a driven pulley 50. It is constituted by a timing belt 51 which is stretched over, and the holding member 47 is fastened to the timing belt 51. Therefore, the moving member 46 and the hot plate 31 can be relatively moved up and down by forward and reverse rotation of the stepping motor 48.

When the substrate G is moved by rotating the moving member, dust may be generated from this part because the end of the substrate and the moving member are rubbed while the substrate G is being moved. In the case of moving, since the substrate end and the moving member are hardly rubbed even while the substrate G is being moved,
Generation of dust can be reduced as compared with the case where the moving member is rotated.

Although the rotating means for rotating the moving member in the normal and reverse directions is provided, it goes without saying that, for example, an air cylinder 101 or the like may be provided around the substrate without providing the moving member 46 as shown in FIG. Absent. The air cylinder 101 is, for example, 4
Each is fixed to the holding member 103 so as to be arranged around the hot plate 31. The holding member 103 can be raised and lowered in the same manner as in the first embodiment, and the lifting speed can be changed.
The vertical position can be detected. Further, a valve (not shown) capable of changing the flow rate of the driving gas is provided in the middle of the pipe for sending the driving gas to the air cylinder 101 so that the moving speed of the rod portion 102 that linearly moves the air cylinder 101 is variable, This valve adjusts the opening and closing amount of this valve according to an instruction from the control unit 60 based on the result of detecting the elevation position,
The moving speed of the rod portion 102 is varied to make the air cylinder 101
The substrate G may be directly pushed by the rod portion 102 that moves linearly to perform linear movement. In this case, the number of parts can be reduced because the moving member is not required, and the structure can be simplified.

Although the substrate G was placed on the protrusions 92 and subjected to the heat treatment, the substrate G was placed on the hot plate 31 without the protrusions 92 in order to further improve the temperature distribution on the substrate. Needless to say, the heat treatment may be performed by directly mounting. Also in this case, the support pin 35 and the guide member 46 are lowered stepwise (step bake). After the substrate G is placed on the hot plate 31, the substrate G is sucked and held on the hot plate 31 by the suction holes 45 and released at intervals of, for example, about 1 to 3 seconds. The moving member 46 is stationary when the substrate G is being sucked and held on the hot plate, and the moving member 46 rotates forward and reverse only when the suction holding of the substrate G is released.
Is swung in a horizontal plane. When the suction and holding of the substrate G is released, the substrate G is easily peeled off from the hot plate 31, and the nitrogen or inert gas heated to the set temperature of the hot plate is set so that the back surface of the substrate G does not rub against the surface of the hot plate 31. It is better to blow out the gas from the suction hole 45 to provide a gas layer on the back surface of the substrate and the surface of the hot plate 31.

Next, a second embodiment will be described.
The overall configuration of the coating and developing system is the same as that of the first embodiment, as shown in FIG.

The second processing section 3 includes a first heat treatment apparatus 20
d and a second heat treatment apparatus 20e. As shown in FIG. 3, the first heat treatment apparatus 20d and the second heat treatment apparatus 20e are provided with a temperature control panel, for example, a hot plate 31, on which the substrate G is placed and which controls the temperature. For example, an indicator pin 35 is provided.

The arrangement of the indicator pins 35, which are support members for the substrate G, is different between the first heat treatment apparatus 20d and the second heat treatment apparatus 20e.

When the heat treatment is performed, the substrate G is first
The indicator pin 35 is placed on the indicator pin 35 of the first heat treatment apparatus 20 d and descends, and the temperature of the substrate G is adjusted close to the hot plate 31. After a lapse of a predetermined time, the substrate G is raised by raising the indicating pin 35, and the substrate G is received from the first heat treatment apparatus 20d by the main arm. Thereafter, the substrate G is placed on the indicator pins 35 of the second heat treatment apparatus 20e, and the indicator pins 35 descend, the substrate G approaches the hot plate 31, and the temperature of the substrate G is adjusted again.

The first heat treatment apparatus 20d and the second heat treatment apparatus 20e differ in the arrangement of the support members with respect to the substrate G. The first heat treatment apparatus 20d performs the first heat treatment and the second heat treatment apparatus 20e performs the second heat treatment apparatus 20e. With the second heat treatment performed, the arrangement of the support means relatively moves with respect to the substrate G, the temperature on the substrate G near the contact portion with the substrate G becomes equal to that of the other parts of the substrate G, and the transfer mark Does not occur.

The substrate G was placed on the support pins 35 and the heat treatment was performed by bringing the substrate G close to the hot plate 31. However, the heat treatment was performed by placing the substrate G directly on the hot plate 31. Needless to say, the protrusions 92 may be provided on the hot plate 31 and the substrate G may be placed on the protrusions 92 to perform the heat treatment.

Next, a third embodiment will be described.
The overall configuration of the coating and developing system is the same as that of the first embodiment, as shown in FIG.

The second processing unit 3 includes, for example, a hot plate 31 which is a temperature control panel for mounting and controlling the temperature of the substrate G as shown in FIG. Heat treatment apparatus 2 having support means for supporting
0 is provided.

When heat-treating the substrate G, first, the indicator pins 3
The substrate G is placed on the substrate 5, the indicator pins 35 are lowered, the substrate G approaches the hot plate 31, and the temperature of the substrate G is adjusted (first substrate temperature adjustment). After a lapse of a predetermined time, the instruction pin 35 moves up and the main arm 15 receives the substrate G. The second substrate temperature adjustment is performed by the heat treatment apparatus 20 that has again performed the first substrate temperature adjustment, but the main arm 15 is moved in the horizontal direction by a predetermined amount according to an instruction from the control unit 60, and the first substrate temperature adjustment is performed again. On the indicator pin 35 in the heat treatment apparatus 20 which performed the temperature control of the substrate,
The substrate G is placed so as to be different from the relative position between the substrate G and the support pins 35 at the time of the first substrate temperature control. Thereafter, the indicator pins 35 are lowered, the substrate G approaches the hot plate 31, and the temperature of the substrate G is adjusted.

During the temperature adjustment process between the first substrate temperature adjustment and the second substrate temperature adjustment, the substrate G is returned to the heat treatment apparatus 20 so that the relative position between the substrate G and the support pins 35 changes. By placing the substrate, the arrangement of the heat treatment apparatus 20 moves relatively to the substrate G, the temperature on the substrate G at the contact portion with the substrate G becomes equal to that of the other portions, and no transfer mark occurs.

The substrate G was placed on the support pins 35 and the heat treatment was performed by bringing the substrate G close to the hot plate 31. However, the heat treatment was performed by placing the substrate G directly on the hot plate 31. Needless to say, the protrusions 92 may be provided on the hot plate 31 and the substrate G may be placed on the protrusions 92 to perform the heat treatment.

Although the first temperature control and the second temperature control were performed by the same heat treatment apparatus 20, heat treatment apparatuses 20d and 20d having the same configuration were used.
20e, the first temperature control is performed by the first heat treatment apparatus 20d, and after the first temperature control, the second temperature control is performed by the second heat treatment apparatus 2d.
When the substrate G is placed on the second heat treatment apparatus 20e, the control unit is controlled so that the relative positions of the substrate G and the support pins 35 are different between the first temperature control and the second temperature control. The substrate G is shifted by a predetermined amount in the horizontal direction from the regular substrate mounting position of the second heat treatment apparatus 20e in accordance with an instruction from the
Needless to say, the temperature may be controlled by placing the device on top.

In the first to third embodiments, for example, a heat treatment apparatus is used as an example of a substrate temperature control apparatus. It goes without saying that the adhesion processing device 19 that performs adhesion processing on the surface of the substrate G may be used.

[0093]

According to the first and fourteenth aspects of the present invention, the heat transmitted to the substrate is dispersed over a wide range, the temperature distribution of the substrate becomes uniform, and no transfer marks are generated, so that the yield of products can be improved. it can.

According to the second aspect of the present invention, it is possible to further suppress the generation of electric charges due to friction on the surface of the temperature control panel, prevent the electrostatic breakdown of the circuit pattern, and improve the yield of products.

According to the third aspect of the invention, a large amount of heat is conducted, the temperature distribution of the substrate is improved, and the yield of products can be improved.

According to the fourth and fifteenth aspects of the present invention, it is possible to further remove charges generated on the mounting surface of the substrate, prevent electrostatic breakdown of the substrate, and improve the yield of products.

According to the fifth aspect of the present invention, since a plurality of displacement means are arranged around the substrate, the substrate does not fall off from the support means, and the safety in the manufacturing process can be improved.

According to the sixth aspect of the present invention, since the supporting position is changed while the substrate is moved up and down, the temperature uniformity of the substrate can be improved.
Product quality can be improved.

According to the seventh aspect of the present invention, the position of the elevating means is detected, and when the elevating means starts to descend, the electric power supplied to the temperature control panel is increased by a predetermined amount for a predetermined time. The supply control unit issues an instruction, and the temperature of the temperature control panel rises by a predetermined time for a predetermined time, so that the processing time can be further shortened and the throughput can be improved.

According to the eighth aspect of the present invention, the substrate is gradually heated by gradually approaching the temperature control panel so that the substrate does not warp. By gradually bringing the substrate closer to the temperature control panel, the temperature difference between the front and back of the substrate can be reduced to reduce the elongation due to the temperature difference, and the substrate can be heated without warping the substrate. It becomes the same in the plane, the temperature distribution of the substrate can be made as uniform as possible, and the yield of products can be improved.

According to the ninth and tenth aspects of the present invention, it is possible to change the mounting position of the substrate during the temperature control of the substrate.
The heat transmitted to the substrate is dispersed over a wide range, the temperature distribution of the substrate becomes uniform, and no trace of transfer occurs, so that the yield of products can be improved.

According to the eleventh aspect of the present invention, the material of the moving member can be reduced as compared with the case where the shape of the moving member is circular, the moving member can be reduced in weight, and the weight of the substrate temperature controller can be reduced. Further, since the moving member rotates about the center axis of the moving member, the moving member can be rotated in a more balanced and smoother manner than in the case where the shape of the moving member is circular, and the yield of products can be improved.

According to the twelfth aspect of the present invention, when the mounting position of the substrate is moved in the linear direction during the temperature control processing of the substrate, the end of the substrate and the moving member are hardly rubbed while the substrate is being moved. The generation of minute dust can be reduced, and the yield of products can be improved.

According to the thirteenth aspect of the present invention, as the support means is lowered, the temperature of the substrate rises, and the temperature difference between the tip of the support means and the substrate disappears, so that the position of the support means is detected and the position of the support means is detected. As the value becomes lower, the rotational speed of the moving member is reduced to a predetermined speed in accordance with an instruction from the control unit.
Even if the moving speed of the substrate is reduced, it is effective for transfer. Further, by reducing the moving speed of the substrate, the possibility of generation of electric charges on the back surface of the substrate can be reduced, and the yield of products can be improved.

According to the sixteenth and eighteenth aspects of the invention, the temperature is controlled by the first temperature control device, and then the temperature is controlled by the second temperature control device. Since the arrangement of the support means for the substrate with the temperature control device is different, their arrangement moves relatively to the substrate, the temperature on the substrate at the contact portion with the substrate becomes equal to that of the other portions, and the transfer mark Since no occurrence occurs, the yield of products can be improved.

According to the seventeenth aspect of the present invention, the arrangement of the substrate supporting portion of the temperature controller moves relative to the substrate, and the temperature on the substrate at the contact portion with the substrate becomes equal to that of the other portions. Since no transfer marks are generated, the yield of products can be improved.

[0107]

[Brief description of the drawings]

FIG. 1 is a perspective view of an apparatus for coating and developing an LCD glass substrate according to an embodiment of the present invention.

FIG. 2 is an explanatory diagram of a control unit for explaining a control system of a coating and developing apparatus for an LCD glass substrate according to an embodiment of the present invention.

FIG. 3 is a vertical sectional view of the heat treatment apparatus according to the embodiment of the present invention.

FIG. 4 is a perspective view of a displacement unit of the heat treatment apparatus according to the embodiment of the present invention.

FIG. 5 is a perspective view of a moving member of the heat treatment apparatus according to the embodiment of the present invention.

FIG. 6 is a perspective view of a displacement unit of a heat treatment apparatus according to another embodiment of the present invention.

FIG. 7 is a perspective view of a displacement unit of a heat treatment apparatus according to another embodiment of the present invention.

[Explanation of symbols]

 Reference Signs List 20 heat treatment device 31 hot plate 35 support pin 35a projection 36 stepping motor 37 drive pulley 38 driven pulley 39 timing belt 40 holding member 45 suction hole 46 moving member 47 holding member 48 stepping motor 49 drive pulley 50 driven pulley 51 timing belt 52 stepping motor 53 Drive Pulley 54 Followed Pulley 55 Timing Belt 58 Ionizer 90 Elevating Mechanism 91 Rotating Mechanism 92 Elevating Mechanism

Claims (18)

[Claims] An apparatus for controlling a temperature of a substrate, comprising: a temperature control panel on which a substrate is mounted for controlling the temperature; and a displacement unit for changing a mounting position of the substrate on the temperature control panel. 2. The substrate temperature control apparatus according to claim 1, further comprising a support unit projecting from the temperature control panel to support the substrate. 3. A suction hole for sucking and holding a substrate is formed on a substrate mounting surface of the temperature control panel.
Alternatively, the substrate temperature controller according to claim 2. 4. The substrate according to claim 1, wherein the substrate is formed of a semiconductor or an insulating material, and a static eliminator for removing a charge on a mounting surface of the substrate is disposed near the temperature control panel. 4. The substrate temperature control device according to any one of Items 3 to 3. 5. The substrate temperature control according to claim 1, wherein a plurality of said displacement means are provided around the substrate and have a moving member for moving the substrate. apparatus. 6. The substrate temperature control apparatus according to claim 5, wherein said displacement means and said support means include elevating means for elevating the substrate with respect to said temperature control panel. 7. The elevation unit includes a position detection unit that detects an elevation position of the substrate, and includes a power supply control unit that controls an amount of electric power supplied to the temperature control panel based on the position detection unit. The substrate temperature control device according to claim 6, wherein: 8. The substrate temperature control device according to claim 6, wherein said elevating means is provided with a variable mechanism for changing the elevating speed of said substrate. 9. The substrate temperature controller according to claim 5, wherein the displacement unit includes the moving member and a rotating unit that rotates the moving member. 10. The substrate according to claim 9, wherein the moving member has a circular outer periphery in contact with the substrate, and the rotating means is attached to an eccentric shaft of the moving member. Temperature control device. 11. The moving member, wherein an outer periphery of the moving member which contacts the substrate is formed in an elliptical or substantially regular polygonal shape, and the rotating means is attached to a central axis of the moving member. 10. The substrate temperature controller according to 9. 12. The apparatus according to claim 5, wherein the displacement unit includes the moving member, and a linear moving unit that moves the moving member in a linear direction.
Substrate temperature control apparatus according to the paragraph. 13. A method according to claim 1, further comprising: a position detecting means for detecting a vertical position of the substrate; and a speed controller for controlling a rotation speed of the rotating means or a moving speed of the moving means based on the position detecting means. The substrate temperature controller according to claim 9 or 12, wherein 14. A method comprising: mounting a substrate on a temperature control panel; and controlling the temperature of the substrate on the temperature control panel and changing a mounting position of the substrate on the temperature control panel. Characteristic substrate temperature control method. 15. The method of controlling a temperature of a substrate according to claim 14, further comprising a step of separating the substrate from the temperature control panel and removing charges on a mounting surface of the substrate. 16. A first and second temperature control device, comprising: a temperature control panel for mounting a substrate and controlling the temperature; and a support member protruding above the temperature control panel and supporting the substrate; A transfer arm for transferring the substrate from the temperature control device to the second temperature control device; and receiving the substrate whose temperature is controlled by the first temperature control device by the transfer arm, and mounting the substrate on the second temperature control device. Wherein the arrangement of the support member with respect to the substrate in the first temperature adjustment device is different from the arrangement of the support member with respect to the substrate in the second temperature adjustment device. apparatus. 17. A temperature control device, comprising: a temperature control panel on which a substrate is placed to control the temperature; and a temperature control device having a support means protruding above the temperature control panel and supporting the substrate; a transfer arm for transferring the substrate; When receiving the substrate processed by the temperature controller by the transfer arm and mounting the substrate on the temperature controller again,
A substrate processing apparatus comprising: a transfer control unit that places the substrate at a position where the relative position between the temperature control device and the substrate is different. 18. A step of placing a substrate on a first support means and controlling the temperature, and a second support in which a relative position between the first support means and the substrate is different by a transfer arm for transferring the substrate. A step of placing a substrate on the means and controlling the temperature in order.