JPH04196518A - Bake oven of photoresist coater - Google Patents
Bake oven of photoresist coaterInfo
- Publication number
- JPH04196518A JPH04196518A JP32835090A JP32835090A JPH04196518A JP H04196518 A JPH04196518 A JP H04196518A JP 32835090 A JP32835090 A JP 32835090A JP 32835090 A JP32835090 A JP 32835090A JP H04196518 A JPH04196518 A JP H04196518A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- hot plate
- photoresist
- film thickness
- baking process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000000576 coating method Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 10
- 238000010926 purge Methods 0.000 abstract description 10
- 238000009826 distribution Methods 0.000 abstract description 5
- 230000007423 decrease Effects 0.000 abstract description 2
- 238000012935 Averaging Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 11
- 239000002904 solvent Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は半導体製造装置に関し、特にフォトレジスト塗
布装置のベークオーブンに関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to semiconductor manufacturing equipment, and more particularly to a bake oven for a photoresist coating equipment.
［従来の技術］
従来のフォトレジスト塗布装置のベークオーブンは第３
図に示すように、ホットプレートｌと、ラバーヒータ２
と、オーブンカバー３と、ガスパージ配管４と、プロキ
シミティビン５と、搬送用ビーム６と、搬送開口部７と
を有している。[Prior art] The bake oven of a conventional photoresist coating device has a third
As shown in the figure, hot plate l and rubber heater 2
, an oven cover 3 , a gas purge pipe 4 , a proximity bin 5 , a conveyance beam 6 , and a conveyance opening 7 .
次に動作について説明する。Next, the operation will be explained.
第３図において、図示しないフォトレジスト塗布処理部
でフォトレジストを塗布された半導体基板８は先ず、搬
送用ビーム６の図示した矢印方向の連続動作により、搬
送開口部７からホットプレート１上に搬送される。In FIG. 3, a semiconductor substrate 8 coated with a photoresist in a photoresist coating processing section (not shown) is first transported from a transport opening 7 onto a hot plate 1 by continuous movement of a transport beam 6 in the direction of the arrow shown. be done.
半導体基板８は、ラバーヒータ２により一般に１００℃
前後に加熱されたホットプレート１上に、プロキシミテ
ィビン５を介して置かれる。この状態でガスパージ配管
４より窒素等を噴出させ、半導体基板８を待機させるの
が、従来の一般的なベーク処理である。The semiconductor substrate 8 is generally heated to 100°C by the rubber heater 2.
It is placed on a hot plate 1 heated back and forth via a proximity bin 5. In this state, nitrogen or the like is blown out from the gas purge pipe 4 and the semiconductor substrate 8 is placed on standby in a conventional general baking process.
なお、ベーク処理の目的は、フォトレジスト塗布処理後
の半導体基板８上のフォトレジスト中の溶剤をある程度
減少させ、フォトレジストの結合力を強化させるためで
ある。フォトレジスト自体とフォトレジスト内部の感光
剤は本来粉末であり、溶剤は結合剤である。Note that the purpose of the baking process is to reduce the solvent in the photoresist on the semiconductor substrate 8 after the photoresist coating process to some extent and to strengthen the bonding force of the photoresist. The photoresist itself and the photosensitizer inside the photoresist are powders in nature, and the solvent is the binder.
また、プロキシミティビン５は、半導体基板８とホット
プレート１を直接接触させないためのギャップであり、
半導体基板８真面の塵埃汚染の防止を目的としている。Further, the proximity bin 5 is a gap to prevent the semiconductor substrate 8 and the hot plate 1 from coming into direct contact,
The purpose is to prevent dust contamination directly on the semiconductor substrate 8.
ギャップは、−船釣にＯ０ｌＩＩＩｍ〜０．３１Ｗｌで
ある。The gap is -O0lIIIm~0.31Wl for boat fishing.
ガスパージ配管４によるオーブンカバー３内のガスパー
ジは、オーブン内を大気圧より余圧にして、搬送開口部
７等からの塵埃の侵入による半導体基板８の汚染を防止
するとともに、フォトレジスト中の溶剤の揮発を促進す
るのが目的である。The gas purge inside the oven cover 3 by the gas purge piping 4 makes the inside of the oven pressurized above atmospheric pressure to prevent contamination of the semiconductor substrate 8 due to intrusion of dust from the conveyance opening 7, etc., and also to prevent the solvent in the photoresist from being contaminated. The purpose is to promote volatilization.
〔発明が解決しようとする課題］
この従来のベークオーブンでは、オーブン内で処理中の
半導体基板が一定位置で静止しているため、−船釣＋：
１００℃設定で０．５℃〜１．０℃といわれる、ホット
プレート表面の温度むらや、ガスバージにおける不均一
なガスの流れにより、半導体基板面内の温度分布を均一
にすることが困難であった。[Problems to be Solved by the Invention] In this conventional bake oven, since the semiconductor substrate being processed in the oven is stationary at a fixed position, - boat fishing +:
It is difficult to make the temperature distribution uniform within the semiconductor substrate surface due to temperature unevenness on the surface of the hot plate, which is said to be 0.5 to 1.0 degrees Celsius at a setting of 100 degrees Celsius, and uneven gas flow in the gas barge. Ta.
また、半導体基板のベークオーブン内の出入り口である
搬送開口部からは、排気を引くのが通常であり、開口部
付近の温度低下は避けられない。Further, exhaust air is normally drawn from the transport opening, which is the entrance and exit of the semiconductor substrate into the bake oven, and a drop in temperature near the opening is unavoidable.
さらに、排気風速が不均一であれば、半導体基板面内の
温度分布の均一性は悪化する。Furthermore, if the exhaust air velocity is non-uniform, the uniformity of the temperature distribution within the semiconductor substrate surface will deteriorate.
これまで述べてきた半導体基板面内の温度分布の不均一
は、半導体基板面内のフォトレジスト膜厚の不均一をも
たらすことが知られている。It is known that the non-uniform temperature distribution within the plane of the semiconductor substrate described above causes non-uniformity of the photoresist film thickness within the plane of the semiconductor substrate.
というのは、フォトレジスト膜厚とベーク処理温度に相
関関係があるからである。すなわち、温度が高くなると
、フォトレジスト中の溶剤の揮発が促進され、膜厚が薄
くなり、温度が低くなると、逆に膜厚が厚くなるという
比例関係を持っている。This is because there is a correlation between the photoresist film thickness and the baking temperature. In other words, there is a proportional relationship in which as the temperature increases, the volatilization of the solvent in the photoresist is promoted and the film thickness becomes thinner, and as the temperature decreases, the film thickness becomes thicker.
半導体基板面内のフォトレジスト膜厚の不均一は、フォ
トレジスト露光、現像後のフォトレジストパターン寸法
の不均一を招く。Non-uniformity in photoresist film thickness within the plane of a semiconductor substrate leads to non-uniformity in photoresist pattern dimensions after photoresist exposure and development.
本発明の目的は、ベーク処理によるフォトレジスト膜厚
の不均一化を防止したフォトレジスト塗布装置のベーク
オーブンを提供することにある。An object of the present invention is to provide a bake oven for a photoresist coating apparatus that prevents non-uniformity of photoresist film thickness due to baking treatment.
［課題を解決するための手段］
前記目的を達成するため、本発明に係るフォトレジスト
塗布装置のベークオーブンは、半導体基板の熱処理を行
うホットプレートと、
ホットプレート上で半導体基板を回転させる手段とを有
するものである。[Means for Solving the Problems] In order to achieve the above object, a bake oven of a photoresist coating apparatus according to the present invention includes: a hot plate for heat-treating a semiconductor substrate; a means for rotating the semiconductor substrate on the hot plate; It has the following.
〔作用］
被処理物である半導体基板を回転させながら熱処理を行
うものである。[Operation] Heat treatment is performed while rotating the semiconductor substrate, which is the object to be processed.
［実施例］ 次に本発明について、図面を参照して説明する。[Example] Next, the present invention will be explained with reference to the drawings.
第１図は、本発明の一実施例を示す斜視図、第２図は、
同縦断面図である。FIG. 1 is a perspective view showing one embodiment of the present invention, and FIG. 2 is a perspective view showing an embodiment of the present invention.
It is a longitudinal sectional view of the same.
図において、１はホットプレート、２はラバーヒータ、
３はオーブンカバー、４はガスパージ配管、６は搬送用
ビーム、７は搬送開口部であり、この点は従来と同じで
ある。In the figure, 1 is a hot plate, 2 is a rubber heater,
Reference numeral 3 designates an oven cover, 4 a gas purge pipe, 6 a conveyance beam, and 7 a conveyance opening, which are the same as in the prior art.
本発明では、プロキシミテイビン５が、ホットプレート
１と円形ホットプレート９の間の回転溝１０に沿って図
中の矢印方向にある一定速度で回転する機能を持ってい
る点に特徴がある。The present invention is characterized in that the proximity bin 5 has a function of rotating at a constant speed in the direction of the arrow in the figure along the rotation groove 10 between the hot plate 1 and the circular hot plate 9.
第１の歯車１１は円柱状の円形ホットプレート９にベア
リング１２を介して回転可能に支持されている。また、
歯車１１の上部にはプロキシミティビン５が固定されて
いる。この第１の歯車１１はモータ１３と第２の歯車１
４により、図中の矢印方向に−・定速度で回転する。The first gear 11 is rotatably supported by a cylindrical circular hot plate 9 via a bearing 12. Also,
A proximity bin 5 is fixed to the upper part of the gear 11. This first gear 11 is connected to a motor 13 and a second gear 1.
4, it rotates at a constant speed in the direction of the arrow in the figure.
従ってプロキシミティビン５は回転溝１０に沿って回転
することになる。Therefore, the proximity bin 5 rotates along the rotation groove 10.
本実施例におけるベーク処理は搬送用ビーム６により、
搬送開口部７から半導体基板８をプロ上シミティビン５
上にのせた後、上述した手段で半導体基板８をある一定
速度で回転させる。回転時間はベーク処理時間と同一で
おる。本実施例においても、ガスパージ、ホットプレー
ト面内温度分布の不均一、搬送開口部の温度低下等の問
題は処理中の半導体基板８を回転させることにより、こ
れらの影響を平均化し、フォトレジスト膜厚の不均一化
を防止することができる。なお、処理中にはガスパージ
配管４よりガスパージを行うベーク処理終了後、半導体
基板８は再び搬送ビーム６により、搬送開口部７から搬
出される。The baking process in this embodiment is carried out by the conveying beam 6.
Transfer the semiconductor substrate 8 from the transport opening 7 to the professional scimiti bin 5.
After placing the semiconductor substrate 8 on top, the semiconductor substrate 8 is rotated at a certain speed using the above-described means. The rotation time is the same as the baking time. In this embodiment as well, problems such as gas purge, nonuniform temperature distribution within the hot plate surface, and temperature drop at the transport opening can be solved by rotating the semiconductor substrate 8 during processing, which averages out these effects and improves the photoresist film. Non-uniform thickness can be prevented. Note that during the process, gas purge is performed from the gas purge pipe 4. After the baking process is completed, the semiconductor substrate 8 is again carried out from the carrying opening 7 by the carrying beam 6.
［発明の効果］
以上説明したように本発明は、フォトレジスト塗布後の
半導体基板をベーク処理中に回転させることにより、ベ
ーク処理によるフォトレジスト膜厚の不均一化を防止す
ることができる。[Effects of the Invention] As described above, the present invention can prevent the photoresist film thickness from becoming non-uniform due to the baking process by rotating the semiconductor substrate coated with the photoresist during the baking process.
膜厚のばらつき量は、使用するフォトレジストの膜厚９
種類及びベークオーブンの機構等、種々の条件により異
なるが、はぼレジスト膜厚の０゜２％程度である。The amount of variation in film thickness is determined by the film thickness of the photoresist used9
Although it varies depending on various conditions such as the type and the mechanism of the bake oven, it is approximately 0.2% of the resist film thickness.
本発明のベークオーブンでは、膜厚のばらつき量を膜厚
の０．１％以下に半減できることが予想される。With the bake oven of the present invention, it is expected that the variation in film thickness can be halved to 0.1% or less of the film thickness.
従って、フォトレジストパターン寸法均一性の向上を図
ることができ、半導体製造における歩留りの向上ととも
に、高集積化によるパターン寸法の微細化にも対応でき
るという効果がある。Therefore, it is possible to improve the uniformity of photoresist pattern dimensions, which has the effect of improving the yield in semiconductor manufacturing and also being able to respond to miniaturization of pattern dimensions due to higher integration.
第１図は、本発明の一実施例を示す斜視図、第２図は、
同縦断面図、第３図は、従来例を示す斜視図である。
１・・・ホットプレート ２・・・ラバーヒータ３
・・・オーブンカバー ４・・・ガスパージ配管５
・・・プロキシミティビン ６・・・搬送用ビーム７・
・・搬送開口部 ８・・・半導体基板９・・・
円形ホットプレート １０・・・回転溝１１・・・第１
の歯車 １２・・・ベアリング１３・・・モータ
１４・・・第２の歯車特許呂願入 日本電
気株式会社
第２図
第３図FIG. 1 is a perspective view showing one embodiment of the present invention, and FIG. 2 is a perspective view showing an embodiment of the present invention.
The vertical sectional view and FIG. 3 are perspective views showing a conventional example. 1... Hot plate 2... Rubber heater 3
... Oven cover 4 ... Gas purge piping 5
...Proximity bin 6...Transportation beam 7.
...Conveyance opening 8...Semiconductor substrate 9...
Circular hot plate 10... Rotating groove 11... 1st
Gear 12...Bearing 13...Motor 14...Second gear Patent application submitted NEC Corporation Figure 2 Figure 3
Claims (1)
することを特徴とするフォトレジスト塗布装置のベーク
オープン。(1) A bake-open photoresist coating apparatus comprising: a hot plate for heat-treating a semiconductor substrate; and means for rotating the semiconductor substrate on the hot plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32835090A JPH04196518A (en) | 1990-11-28 | 1990-11-28 | Bake oven of photoresist coater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32835090A JPH04196518A (en) | 1990-11-28 | 1990-11-28 | Bake oven of photoresist coater |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04196518A true JPH04196518A (en) | 1992-07-16 |
Family
ID=18209263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32835090A Pending JPH04196518A (en) | 1990-11-28 | 1990-11-28 | Bake oven of photoresist coater |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04196518A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000243687A (en) * | 1999-02-19 | 2000-09-08 | Tokyo Electron Ltd | Apparatus and method for regulating temperature of substrate, and for processing substrate |
| US6207357B1 (en) * | 1999-04-23 | 2001-03-27 | Micron Technology, Inc. | Methods of forming photoresist and apparatus for forming photoresist |
| CN107515516A (en) * | 2017-08-04 | 2017-12-26 | 上海超导科技股份有限公司 | A kind of thick photoresist high uniformity post bake method |
-
1990
- 1990-11-28 JP JP32835090A patent/JPH04196518A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000243687A (en) * | 1999-02-19 | 2000-09-08 | Tokyo Electron Ltd | Apparatus and method for regulating temperature of substrate, and for processing substrate |
| US6207357B1 (en) * | 1999-04-23 | 2001-03-27 | Micron Technology, Inc. | Methods of forming photoresist and apparatus for forming photoresist |
| CN107515516A (en) * | 2017-08-04 | 2017-12-26 | 上海超导科技股份有限公司 | A kind of thick photoresist high uniformity post bake method |
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