JP2000223772A5

JP2000223772A5 -

Info

Publication number: JP2000223772A5
Application number: JP1999019438A
Authority: JP
Filing date: 1999-01-28
Publication date: 2005-06-16
Anticipated expiration: 2019-01-28

Description

前記したところから、本発明に依る光半導体装置の製造方法に於いては、
（１）
面指数が（１００）であるＩｎＰ基板にＩｎＰと屈折率を異にする三族−五族化合物半導体からなる回折格子用半導体層を堆積する工程と、次いで、該回折格子用半導体層の局所に回折格子を切って複数条の回折格子部を形成する工程と、次いで、該複数条の回折格子部を埋め込むと共に該回折格子用半導体層を被覆するＩｎＰからなる第一の層を堆積する工程と、次いで、該第一の層を堆積した際に比較し基板温度を高くして該第一の層上にＩｎＰからなる第二の層を堆積する工程とが含まれ、該第一の層を堆積する工程は、Ｉｎの原料を有機金属、Ｐの原料をＰＨ ₃ 或いは有機Ｐ、キャリヤ・ガスをＨ ₂ とする有機金属気相成長法を適用し、且つ、該回折格子用半導体層の回折格子部以外の面指数が（１００）の平坦部に於ける成長速度をＤＲ ₁ 〔μｍ／ｈ〕、キャリヤ・ガスＨ ₂ の総流量に対するＰ原料の流量比をＦＲ〔％〕としたとき、ｌｏｇ ₁₀ ＦＲ≧４．４Ａ・ＤＲ ₁ −１．３（Ａ＝２〜３）の条件を満たして実施されることを特徴とするか、又は、 From the above, in the method for manufacturing an optical semiconductor device according to the present invention,
(1)
Group III having different InP and refractive index to the InP substrate plane index is (100) - depositing a semiconductor layer diffraction grating consisting of five compound semiconductors, then the station of the diffraction grating semiconductor layer depositing and forming a diffraction grating portion of the plural rows, then a first layer of InP covering the semiconductor layer diffraction grating with embedding diffraction grating terminal part of the plurality number Article off the diffraction grating at a step you, then include the step of depositing a second layer of InP in comparison to said first layer on by raising the substrate temperature during the deposition of said first layer, said depositing a first layer, applying the raw material organic metal in, the raw material of PH ₃ or organic P in P, the organic gold Shokukisho growth method a carrier gas and H _2, and, the diffraction grating DR ₁ and in the growth rate on the flat portion of the face index other than the diffraction grating of the use semiconductor layer (10 0) [[mu] m / h], the flow rate ratio of P material against the total flow rate of the carrier gas H ₂ When FR [%] is set, it is characterized in that it is carried out by satisfying the condition of _{log 10} FR ≧ 4.4A · DR ₁ −1.3 (A = 2-3), or

【００３８】
（２）
前記（１）に於いて、成長速度ＤＲ ₁ を０．１〔μｍ／ｈ〕以下とすることを特徴とす
る。 [0038]
(2)
In the above (1), the growth rate DR _{1 is set} to 0.1 [μm / h] or less.
To.

【００５５】
【発明の効果】
本発明に依る光半導体装置の製造方法に於いては、面指数が（１００）であるＩｎＰ基
板にＩｎＰと屈折率を異にする三族−五族化合物半導体からなる回折格子用半導体層を堆
積する工程と、次いで、該回折格子用半導体層の局所に回折格子を切って複数条の回折格
子部を形成する工程と、次いで、該複数条の回折格子部を埋め込むと共に該回折格子用半
導体層を被覆するＩｎＰからなる第一の層を堆積する工程と、次いで、該第一の層を堆積
した際に比較し基板温度を高くして該第一の層上にＩｎＰからなる第二の層を堆積する工
程とが含まれ、該第一の層を堆積する工程は、Ｉｎの原料を有機金属、Ｐの原料をＰＨ ₃
或いは有機Ｐ、キャリヤ・ガスをＨ ₂ とする有機金属気相成長法を適用し、且つ、該回折
格子用半導体層の回折格子部以外の面指数が（１００）の平坦部に於ける成長速度をＤＲ
₁ 〔μｍ／ｈ〕、キャリヤ・ガスＨ ₂ の総流量に対するＰ原料の流量比をＦＲ〔％〕とし
たとき、ｌｏｇ ₁₀ ＦＲ≧４．４Ａ・ＤＲ ₁ −１．３（Ａ＝２〜３）の条件を満たして実施
される。 0055
【Effect of the invention】
In the method for manufacturing an optical semiconductor device according to the present invention , an InP group having a surface index of (100) is used.
A semiconductor layer for a diffraction grating made of a group 3-5 compound semiconductor having a refractive index different from that of InP is deposited on a plate.
The step of stacking, and then the diffraction grating is cut locally in the semiconductor layer for the diffraction grating to form a plurality of diffraction patterns.
A step of forming a child portion, and then embedding the plurality of diffraction grating portions and a half for the diffraction grating.
A step of depositing a first layer of InP covering a conductor layer, followed by depositing the first layer.
A second layer made of InP is deposited on the first layer by raising the substrate temperature.
In the step of depositing the first layer, the raw material of In is an organometallic and the raw material of P is PH _3.
Alternatively, the metalorganic vapor phase growth method using organic P and carrier gas as H ₂ is applied, and the diffraction is performed.
DR the growth rate in a flat portion where the surface index of the semiconductor layer for grating other than the diffraction grating portion is (100).
₁ [μm / h], the flow rate ratio of the P raw material to the total flow rate of _{the carrier gas H 2 is FR [%].}
When, it is carried out by satisfying the condition of _{log 10} FR ≧ 4.4A · DR _{1 −1.3 (A = 2-3).}
Will be done.

Claims

Depositing a semiconductor layer for a diffraction grating made of a Group III-V Group compound semiconductor having a refractive index different from that of InP on an InP substrate having a plane index of (100);
Next, a step of cutting a diffraction grating locally in the semiconductor layer for diffraction grating to form a plurality of diffraction grating portions;
Next, a step of depositing a first layer made of InP that embeds the plurality of diffraction grating portions and covers the diffraction grating semiconductor layer;
Then, depositing a second layer of InP on the first layer at a higher substrate temperature than when the first layer was deposited;
Depositing the first layer comprises:
In raw material is organometallic, P raw material is PH _{3 Three} Or organic P, carrier gas H _{2 2} And the growth rate in a flat portion where the plane index other than the diffraction grating portion of the semiconductor layer for diffraction grating is (100) is DR. _{1 1} [Μm / h], carrier gas H _{2 2} When the flow rate ratio of P raw material to the total flow rate of FR is FR [%],
log _10Ten FR ≧ 4.4A ・ DR _{1 1} -1.3 (A = 2 to 3)
To fulfill the requirements of
A method of manufacturing an optical semiconductor device characterized by the above.

Growth rate DR _{1 1} Of 0.1 [μm / h] or less
The method of manufacturing an optical semiconductor device according to claim 1.