JP2000196428A - Switching circuit having self-holding function - Google Patents
Switching circuit having self-holding functionInfo
- Publication number
- JP2000196428A JP2000196428A JP10378450A JP37845098A JP2000196428A JP 2000196428 A JP2000196428 A JP 2000196428A JP 10378450 A JP10378450 A JP 10378450A JP 37845098 A JP37845098 A JP 37845098A JP 2000196428 A JP2000196428 A JP 2000196428A
- Authority
- JP
- Japan
- Prior art keywords
- active element
- self
- driving
- switching
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【技術分野】本発明は自己保持機能を持つスイッチング
手段の主電流容量を電圧駆動型の能動素子手段で拡大し
た「自己保持機能を持つスイッチング回路」に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a "switching circuit having a self-holding function" in which the main current capacity of a switching means having a self-holding function is expanded by voltage-driven active element means.
【0002】[0002]
【背景技術】従来技術として自己保持機能を持つスイッ
チング手段の主電流容量を能動素子手段で拡大した「自
己保持機能を持つスイッチング回路」を図2、図3に1
つずつ示す。図2のスイッチング回路では「トランジス
タ1、2が形成するサイリスタの等価回路」の主電流容
量をバイポーラ型のトランジスタ80が拡大し、図3の
スイッチング回路では「トランジスタ1、2が形成する
サイリスタの等価回路」の主電流容量を電圧駆動型のト
ランジスタ7が拡大する。しかしながら、一般的に電圧
駆動型トランジスタはバイポーラ型トランジスタよりオ
ン駆動電圧が大きいため図3のスイッチング回路には
『オン電圧が大きい』という問題点が有る。
( 問 題 点 ) そこで、本発明は『自己保持機能を持つスイッチング手
段の主電流容量を電圧駆動型の能動素子手段で拡大する
際にオン電圧が大きくならない』自己保持機能を持つス
イッチング回路を提供することを目的としている。(
発明の目的 )2. Description of the Related Art FIGS. 2 and 3 show a "switching circuit having a self-holding function" in which a main current capacity of a switching means having a self-holding function is enlarged by an active element means as a prior art.
Show one by one. In the switching circuit of FIG. 2, the bipolar transistor 80 expands the main current capacity of the “equivalent circuit of the thyristor formed by the transistors 1 and 2”, and in the switching circuit of FIG. 3, “the equivalent of the thyristor formed by the transistors 1 and 2” The voltage-driven transistor 7 expands the main current capacity of the circuit. However, since the voltage-driven transistor generally has a higher on-drive voltage than the bipolar transistor, the switching circuit shown in FIG. 3 has a problem that “the on-voltage is large”.
(Problem) In view of the above, the present invention provides a switching circuit having a self-holding function that does not increase the on-voltage when the main current capacity of the switching means having a self-holding function is expanded by a voltage-driven active element means. It is intended to be. (
Object of the invention)
【0003】[0003]
【発明の開示】即ち、本発明は、自己保持機能を持たな
い電圧駆動型の能動素子手段と、自己保持機能を持つス
イッチング手段と、前記能動素子手段の駆動信号入力用
に対を成さない主端子と制御端子の間に前記スイッチン
グ手段と共に直列接続され、前記スイッチング手段の導
通状態に基づいて動作し、前記スイッチング手段の主電
流の大きさの増加に対して前記能動素子手段の主電流の
大きさを増加させる方向に前記能動素子手段を駆動する
オン方向駆動手段と、「前記能動素子手段の駆動信号入
力用に前記制御端子と対を成す主端子」・前記制御端子
間に接続され、前記スイッチング手段がオフのとき前記
能動素子手段をオフ駆動するオフ駆動手段、を有する自
己保持機能を持つスイッチング回路である。That is, the present invention does not form a pair with a voltage-driven active element having no self-holding function, a switching means having a self-holding function, and a drive signal input for the active element. It is connected in series with the switching means between the main terminal and the control terminal, operates based on the conduction state of the switching means, and increases the magnitude of the main current of the switching means to reduce the main current of the active element means. ON-direction driving means for driving the active element means in a direction of increasing the size, and connected between the `` main terminal paired with the control terminal for inputting a drive signal of the active element means '' and the control terminal, A switching circuit having a self-holding function, comprising: an off-drive means for driving the active element means off when the switching means is off.
【0004】このことによって、前記スイッチング手段
の導通状態もしくはオフ状態に従って前記能動素子手段
を前記オン方向駆動手段がオン方向へ駆動したり、前記
オフ駆動手段がオフ駆動したりして、前記能動素子手段
は前記スイッチング手段の主電流容量を拡大する。しか
も、前記オン方向駆動手段は前記能動索子手段に充分な
オン駆動電圧を供給することもできるので、そのスイッ
チング回路のオン電圧は大きくならない。
( 効 果 )Accordingly, the active element means is driven in the on direction by the on-direction driving means or the off-driving means is driven off in accordance with the conduction state or the off state of the switching means. The means expands the main current capacity of the switching means. In addition, since the on-direction driving means can supply a sufficient on-driving voltage to the active cable means, the on-voltage of the switching circuit does not increase.
(Effect)
【0005】[0005]
【発明を実施するための最良の形態】各発明をより詳細
に説明するために以下添付図面に従ってこれを説明す
る。図1の実施例ではそれぞれが前述した各構成要素に
相当する。 a)トランジスタ7が前述した能動素子手段に。 b)「トランジスタ1、2が形成するサイリスタの等価
回路など」が前述したスイッチング手段に。 c)トランジスタ7のゲート端子、ソース端子およびド
レイン端子が前述した制御端子、対を成す方の主端子お
よび対を成さない方の主端子に。 d)「直流電源81と抵抗82の直列回路」が前述した
オン方向駆動手段に。 e)抵抗83が前述したオフ駆動手段に。BEST MODE FOR CARRYING OUT THE INVENTION In order to describe each invention in more detail, the invention will be described below with reference to the accompanying drawings. In the embodiment of FIG. 1, each corresponds to each component described above. a) The transistor 7 is the active element means described above. b) "Equivalent circuit of thyristor formed by transistors 1 and 2" is the switching means described above. c) The gate terminal, the source terminal, and the drain terminal of the transistor 7 are the control terminal, the main terminal that forms a pair, and the main terminal that does not form a pair. d) The "series circuit of the DC power supply 81 and the resistor 82" is the ON-direction driving means described above. e) The resistor 83 serves as the above-described off-driving means.
【0006】そのスイッチング回路の主電流がゼロで、
その等価サイリスタがオンのとき抵抗82の電流値はそ
の等価サイリスタの保持電流より小さくなければならな
い。さもないと、その等価サイリスタはオンしっ放しに
なり、と言うことは、そのスイッチング回路もオンしっ
放しになってしまう。When the main current of the switching circuit is zero,
When the equivalent thyristor is on, the current value of the resistor 82 must be smaller than the holding current of the equivalent thyristor. Otherwise, the equivalent thyristor will remain on, meaning that the switching circuit will remain on.
【0007】図4〜図20、図24〜図40に各発明の
「自己保持機能を持つスイッチング回路」の実施例を1
つずつ示す。図7、図9、図11、図12、図15、図
17、図19、図20、図31、図33〜図38の各実
施例では例えばそのスイッチング回路をオン動作させな
い間にスイッチをオンさせてオン駆動電圧供給用のコン
デンサを充電する。図13〜図20の各実施例ではカレ
ント・ミラー回路を応用したサイリスタ等価回路の主電
流検出手段を用いているが、その主電流検出手段の代わ
りに図21〜図24に示す「サイリスタ等価回路の主電
流検出手段」の各実施例を用いたスイッチング回路の実
施例も可能である。(参考:実開昭55−44690
号、特開昭58−50825号、特開平2−1609
号)FIGS. 4 to 20 and FIGS. 24 to 40 show one embodiment of the "switching circuit having a self-holding function" of each invention.
Show one by one. In the embodiments of FIGS. 7, 9, 11, 12, 15, 15, 17, 19, 20, 31, and 33 to 38, for example, the switch is turned on while the switching circuit is not turned on. Then, the capacitor for supplying the ON drive voltage is charged. In each of the embodiments shown in FIGS. 13 to 20, the main current detecting means of the thyristor equivalent circuit to which the current mirror circuit is applied is used. Embodiments of the switching circuit using each embodiment of the "main current detecting means" are also possible. (Reference: Japanese Utility Model Application 55-44690)
JP-A-58-50825, JP-A-2-1609
issue)
【図1】発明の1実施例を示す回路図である。FIG. 1 is a circuit diagram showing one embodiment of the present invention.
【図2〜図3】各図は従来の自己保持型スイッチング回
路を1例ずつ示す回路図である。FIGS. 2 to 3 are circuit diagrams showing one example of a conventional self-holding switching circuit.
【図4〜図40】各図は各発明の実施例を1つずつ示す
回路図である。FIGS. 4 to 40 are circuit diagrams showing one embodiment of each invention.
Claims (1)
動素子手段と、自己保持機能を持つスイッチング手段
と、前記能動素子手段の駆動信号入力用に対を成さない
主端子と制御端子の間に前記スイッチング手段と共に直
列接続され、前記スイッチング手段の導通状態に基づい
て動作し、前記スイッチング手段の主電流の大きさの増
加に対して前記能動素子手段の主電流の大きさを増加さ
せる方向に前記能動素子手段を駆動するオン方向駆動手
段と、「前記能動素子手段の駆動信号入力用に前記制御
端子と対を成す主端子」・前記制御端子間に接続され、
前記スイッチング手段がオフのとき前記能動素子手段を
オフ駆動するオフ駆動手段、を有することを特徴とする
自己保持機能を持つスイッチング回路。1. An active element means of a voltage drive type having no self-holding function, a switching means having a self-holding function, a main terminal and a control terminal not forming a pair for inputting a drive signal of the active element means. Connected in series with the switching means, operates based on the conduction state of the switching means, and increases the magnitude of the main current of the active element means with respect to the increase of the magnitude of the main current of the switching means. ON-direction driving means for driving the active element means, and connected between the "main terminal paired with the control terminal for inputting a drive signal of the active element means" and the control terminal,
A switching circuit having a self-holding function, comprising: an off-drive means for driving off the active element means when the switching means is off.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10378450A JP2000196428A (en) | 1998-12-26 | 1998-12-26 | Switching circuit having self-holding function |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10378450A JP2000196428A (en) | 1998-12-26 | 1998-12-26 | Switching circuit having self-holding function |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2000196428A true JP2000196428A (en) | 2000-07-14 |
Family
ID=18509693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10378450A Pending JP2000196428A (en) | 1998-12-26 | 1998-12-26 | Switching circuit having self-holding function |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2000196428A (en) |
-
1998
- 1998-12-26 JP JP10378450A patent/JP2000196428A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH10313570A (en) | Igbt driving circuit | |
US4672245A (en) | High frequency diverse semiconductor switch | |
JPH0642179B2 (en) | Power transistor drive circuit with improved short-circuit protection function | |
KR910008953A (en) | CMOS Integrated Circuits for Capacitance Device Driving | |
JPH01296815A (en) | Semiconductor integrated circuit | |
JP2000196428A (en) | Switching circuit having self-holding function | |
JPH11234108A (en) | Switching device for switching inductive load | |
JP2001286124A (en) | Gate-drive method and gate-drive control circuit | |
JPH07111446A (en) | Gate driver for voltage driven semiconductor element | |
JPH05206816A (en) | Inductive load driving circuit | |
JP3336184B2 (en) | Changeover switch that can be integrated | |
JP3036556B2 (en) | N channel FET drive control circuit | |
JPS6349099Y2 (en) | ||
JPH073828Y2 (en) | On-gate circuit | |
JP3057175B2 (en) | Switching circuit | |
JPH07131971A (en) | Gate drive circuit for voltage drive type semiconductor switching element | |
JP2549477Y2 (en) | Grid pulse power supply | |
JP2573946B2 (en) | Semiconductor integrated circuit | |
JPH0946911A (en) | Charging control circuit and electronic equipment | |
JPH0677340U (en) | Load drive circuit | |
JPS63133890A (en) | Inductive load driving circuit | |
JPS63126315A (en) | Switch circuit | |
JPH0368211A (en) | Switching device | |
JPS63126314A (en) | Switch circuit | |
JPH0746053A (en) | Output circuit |