JPH07131971A - Gate drive circuit for voltage drive type semiconductor switching element - Google Patents

Gate drive circuit for voltage drive type semiconductor switching element

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Publication number
JPH07131971A
JPH07131971A JP27289293A JP27289293A JPH07131971A JP H07131971 A JPH07131971 A JP H07131971A JP 27289293 A JP27289293 A JP 27289293A JP 27289293 A JP27289293 A JP 27289293A JP H07131971 A JPH07131971 A JP H07131971A
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JP
Japan
Prior art keywords
gate
switch
signal
power supply
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27289293A
Other languages
Japanese (ja)
Inventor
Takahiko Noma
孝彦 野間
Original Assignee
Fuji Electric Co Ltd
富士電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, 富士電機株式会社 filed Critical Fuji Electric Co Ltd
Priority to JP27289293A priority Critical patent/JPH07131971A/en
Publication of JPH07131971A publication Critical patent/JPH07131971A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent erroneous turn-on of a voltage drive type semiconductor switching element when turning on or off the power supply of a gate drive circuit of the voltage drive type semiconductor switching element. CONSTITUTION:A base resistor is connected between a base and a positive electrode side of an auxiliary transistor 23, and a partial potential resistor is connected between a base and a negative electrode side of an auxiliary transistor 23; a ratio between the resistance values of these base resistors and the partial potential resistor is adjusted; when a power supply voltage is lower than the predetermined value, a short-circuit transistor 21 is turned on by turning off the auxiliary transistor 23; and a signal transistor 11 is set to s short- circuit state even though the voltage rise of a signal base power supply 13 is slow. As a result, off-transistor 6 turns on to provide a reverse bias state for IGBT2. That is, a voltage changing rate when turning on and off the power supply is varied, and any erroneous turn-on of the IGBT2 due to this variation can be prevented.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gate drive circuit for turning on and off a voltage drive type semiconductor switch element.

[0002]

2. Description of the Related Art As a voltage drive type semiconductor switching device,
For example, there is an insulated gate bipolar transistor. This insulated gate bipolar transistor (hereinafter IGBT
Is abbreviated), and has the advantage that a bipolar transistor has high withstand voltage and that it can easily achieve a large current, and a metal oxide semiconductor field effect transistor (commonly called MOSFET).
It is a new device that has the advantage of being capable of high-speed switching operation. Therefore, the details of the present invention will be described below by taking an IGBT as an example.

FIG. 8 is a circuit diagram showing a conventional example of a gate drive circuit of an IGBT as a voltage drive type semiconductor switch element. In FIG. 8, an on-transistor 5, an on-resistance 7, an off-transistor 6, as an off-switch element, and an off-resistance 8 are connected in series, and the forward-bias power supply 3 and the reverse-bias power supply 4 are connected.
Connected to the main gate power supply which is connected in series with
And a connection point between the off resistance 8 and the off resistance 8 are connected to the gate of the IGBT 2 as a voltage drive type semiconductor switch element. If the on-transistor 5 is turned on here, the forward bias power supply 3 → the on-transistor 5 → the on-resistance 7 → the gate of the IGBT 2 →
A forward bias current flows through the path of the emitter of the IGBT2 → the forward bias power supply 3 to turn on the IGBT2, and when the off transistor 6 is turned on, the reverse bias power supply 4 → the emitter of the IGBT2 → the gate of the IGBT2 → the off resistance 8 It is well known that a reverse bias current flows in the path of the OFF transistor 6 and the reverse bias power source 4 to turn it off. Here, the on-resistance 7 has a role of limiting the forward bias current, and the off-resistance 8 has a role of limiting the reverse bias current.

The on-transistor 5 and the off-transistor 6 are turned on / off by the following. That is, a series circuit of the first base resistor 9 and the signal transistor 11 as a signal switch element is connected in parallel to the main gate power source,
The second base resistor 12 is provided at the base of the signal transistor 11.
The signal base power supply 13 is connected to the base signal circuit 14 as well. If the signal transistor 11 is turned off in response to the output signal from the base signal circuit 14, the on transistor 5 is turned on and the off transistor 6 is turned on.
Is turned off, the IGBT 2 turns on as described above. On the contrary, when the signal transistor 11 is turned on in response to the output signal from the base signal circuit 14, the on transistor 5 is turned off and the off transistor 6 is turned on.
Is turned on, the IGBT2 is turned off.

[0005]

As shown in the conventional circuit of FIG. 8, the gate drive circuit for turning on and off the IGBT 2 has two power supplies. That is, a main gate power supply for supplying a gate current to the IGBT 2 and a signal base power supply 13 for supplying a base current to the signal transistor 11 for controlling the IGBT 2. Since these are separate and independent power supplies, when the power is turned on to start a device such as an inverter configured by combining a plurality of IGBTs 2, there is a difference in the rate of increase in the output voltage of each power supply described above. There is also a difference in the rate of change in the voltage drop of each power supply when the power supply is cut off to stop the inverter.

For example, if the voltage of the main gate power supply rises faster than the voltage of the signal base power supply 13 when the power supply is turned on, it is determined whether the output signal of the base signal circuit 14 is on or off. Regardless, the IGBT2 is forward biased and turns on. That is, it is falsely turned on. This is because the voltage of the signal base power supply 13 rises slowly, and therefore the signal transistor 11 is in the off state until the voltage reaches a predetermined value. Therefore, the rate of voltage rise is faster than that of the signal base power supply 13. But the signal transistor 11
This is because the on transistor 5 is turned on in response to the off state of. On the other hand, when the voltage of the main gate power supply still remains and the voltage of the signal base power supply 13 drops quickly when the power is cut off, the signal transistor 11 is turned off and the on transistor 5 is turned on.
Is forward biased and turns on. That is, even in this case, it is turned on by mistake. Therefore, when the inverter is configured by combining the IGBTs 2, when the main circuit power supply of this inverter remains, the power supply of the gate drive circuit is cut off and then turned on again, the upper and lower arms of the inverter are formed. The IGBT2 that is present will be erroneously turned on at the same time. A so-called arm short circuit accident may occur and the element may be destroyed.

FIG. 9 is an operation waveform diagram showing the operation of the conventional circuit shown in FIG. 8. FIG. 9 is a voltage change of the main gate power supply, FIG. 9 is a voltage change of the signal base power supply 13, and FIG.
Each indicate the operation of the signal transistor 11. As described above, the voltage of the signal base power supply 13 rises from time t 1 when the power is turned on to reach the value A 2
Since the period up to the time the signal transistor 11 is turned off (see FIG. 9), on the transistor 5 is turned on for a period of t 1 ~t 2, IGBT 2 becomes erroneous ON.
In addition, the voltage becomes zero at time t 7 after the power is cut off.
Since the signal transistor 11 is in the off state (see FIG. 9) during the period up to the 8th point, the IGBT 2 may be erroneously turned on during this period as described above.

Therefore, an object of the present invention is to prevent the voltage-driven semiconductor switch element from being erroneously turned on when the power of the gate drive circuit of the voltage-driven semiconductor switch element is turned on / off.

[0009]

In order to achieve the above object, a gate drive circuit for a voltage drive type semiconductor switching device according to the present invention comprises a main gate power supply which is a series connection of a forward bias power supply and a reverse bias power supply. A series connection circuit of 1 gate resistance and a signal switch element is connected in parallel, a gate signal control means is connected to the gate of the signal switch element, and a signal gate power supply is connected via a second gate resistance; The gate of the on-switch element and the gate of the off-switch element are connected to the connection point between the first gate resistor and the signal-switch element, and the signal-switch element responds to the signal from the gate signal control means. When it is off, the forward bias power source supplies a forward bias current to the gate of the voltage-driven semiconductor switch element by turning on the switch element for turning on. When the signal switch element is turned on in response to a signal from the gate signal control means, the reverse bias power source is turned on by the turn-on of the off switch element to cause the reverse bias power source to gate the voltage driven semiconductor switch element. In a gate drive circuit of a voltage drive type semiconductor switch device having a structure in which a reverse bias current is supplied to the device to turn it off, a short circuit switch device is connected in parallel to the signal switch device, and a third gate resistor and an auxiliary switch device are connected. A series connection circuit is connected in parallel to the main gate power source, and a connection point between the third gate resistor and the auxiliary switch element is connected to the gate of the short-circuiting switch element,
A separate gate resistor is inserted between the signal gate power supply and the gate of the auxiliary switch element, and a voltage dividing resistor is inserted between the gate of the auxiliary switch element and the negative side of the main gate power supply. . Alternatively, this separate gate resistor is inserted between the positive electrode side of the main gate power source and the gate of the auxiliary switch element. Alternatively, this separate gate resistor is inserted between the positive electrode side of the reverse bias power source and the gate of the auxiliary switch element.

Alternatively, a constant voltage diode is connected in series to the separate gate resistor, and this series circuit is inserted between the positive side of the main gate power source and the gate of the auxiliary switch element.
Alternatively, this series circuit is inserted between the positive side of the reverse bias power source and the gate of the auxiliary switch element.

[0011]

In the circuit for driving the gate of the voltage-driven semiconductor switching device, a main gate power supply for forward-biasing or reverse-biasing the voltage-driving semiconductor switching device and a signal for forward-biasing or reverse-biasing are generated. And a signal base power supply for Turn on these power supplies
There is a difference in the changing speed of the voltage at the time of shutting off, and there is a possibility that the voltage drive type semiconductor switch element is erroneously turned on due to this difference. Therefore, in the present invention, a short-circuit switch element is provided in which the circuit for operating the ON switch element that forward-biases the voltage-driven semiconductor switch element is short-circuited until the voltage of the signal base power supply is established. This short-circuiting switch element is on during the period from when the power is turned on to when the voltage of the signal base power supply is established, and prevents the voltage-driven semiconductor switching element from being forward-biased. By preventing the voltage-driven semiconductor switch element from being forward-biased while the base power supply voltage is on from the predetermined value to zero, the voltage-driven semiconductor switch element is prevented from being erroneously turned on. It is possible to prevent and prevent accidents such as arm short circuit.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a circuit diagram showing a first embodiment of the present invention. An IGBT 2 as a voltage drive type semiconductor switch element and a forward bias power source 3 described in the circuit of the first embodiment of FIG.
And a reverse bias power supply 4 connected in series, a main gate power supply, an on transistor 5 as an on switch element, an off transistor 6 as an off switch element 6, an on resistance 7, an off resistance 8, a first base resistance 9, a signal Signal transistor 11 as switch element, second base resistor 1
2. The names, uses, and functions of the signal base power supply 13 and the base signal circuit 14 are the same as those in the case of the conventional example circuit described above with reference to FIG.

In the circuit of the first embodiment, a short-circuit transistor 21 as a short-circuit switch element is connected in parallel to the signal transistor 11, and the base of the short-circuit transistor 21 is connected to the main gate power source via a third base resistor 22. It is connected to the positive electrode side and is also connected to the negative electrode side of the main gate power supply via the auxiliary transistor 23 as an auxiliary switch element. Further, the base of the auxiliary transistor 23 is connected to the signal base power source 13 via the fourth base resistor 24, and is connected to the negative side of the main gate power source via the first voltage dividing resistor 25.

With this circuit configuration, the auxiliary transistor 23 is off until the voltage of the signal base power supply 13 rises to a predetermined value when the power is turned on. Therefore, the short-circuit transistor 21 is turned on and the signal transistor 11 is short-circuited.
T2 is reverse biased and the IGBT2 is forcedly turned off. Therefore, the problem described above in the conventional circuit of FIG. 8, that is, the signal transistor 11 is in the off state during the period until the voltage of the signal base power supply 13 is established when the power is turned on, the IGBT 2 is forward-biased and erroneous. The phenomenon of turning on can be avoided. The timing at which the auxiliary transistor 23 is turned on can be arbitrarily set by adjusting the ratio between the resistance value of the fourth base resistor 24 and the resistance value of the first voltage dividing resistor 25.

FIG. 2 is a circuit diagram showing a second embodiment of the present invention. In this second embodiment circuit, a series connection circuit of a fifth base resistor 31 and a second voltage dividing resistor 32 is used as a main gate power source. 1 is connected between the positive electrode side and the negative electrode side, and the connection point of the fifth base resistor 31 and the second voltage dividing resistor 32 is connected to the base of the auxiliary transistor 23. Although it is different from the circuit of the embodiment, except for this part, it is the same as the circuit of the first embodiment described above with reference to FIG. 1, and therefore the description of this same part is omitted.

In the circuit of the second embodiment of FIG. 2, the power to the base of the auxiliary transistor 23 is supplied to the second base resistor 31 and the second base resistor 31.
The voltage is supplied from between the positive electrode and the negative electrode of the main gate power source via the voltage dividing resistor 32, so that the auxiliary transistor 23 is turned on after the voltage of the signal base power source 13 is established. By adjusting the resistance value and the resistance value of the second voltage dividing resistor 32, erroneous turn-on of the IGBT 2 is prevented as in the case of the first embodiment circuit described above.

FIG. 3 is an operation waveform diagram showing the operation of the circuit of the first embodiment of FIG. 1. FIG. 3 is a voltage change of the main gate power supply, FIG. 3 is a voltage change of the signal base power supply 13, and FIG. The operation of the short-circuit transistor 21 and the operation of the auxiliary transistor 23 are shown in FIG. 3, respectively. That is, the period from time point t 1 to power value voltage becomes B rises of the signal based power supply 13 (the B is greater than A shown in FIG. 9) to t 3 when reaching the auxiliary transistor 2
3 because it is turned off (see FIG. 3), the t 1 ~t shorting transistor 21 is 3 periods on (see FIG. 3), so the signal transistor 11 are short-circuited-off transistor 6 is turned on, reverse IGBT2 Since it is biased, the IGBT 2 is turned off. Even when the voltage of the signal base power supply 13 drops due to the power-off, the short-circuit transistor 21 is turned on during the period of t 6 to t 8 from the value B to zero described above, and therefore the signal transistor 11 is short-circuited and turned off. Transistor 6 turns on and IGBT2
Is reverse-biased and turned off to prevent erroneous turn-on. Incidentally, t 2 and t 7 are the times when the signal transistor 11 is switched from on to off or from off to on, as shown in FIG. 9 described above.

FIG. 4 is a circuit diagram showing a third embodiment of the present invention. In the third embodiment circuit, a series connection circuit of a sixth base resistor 41 and a third voltage dividing resistor 42 is a reverse bias power source. Four
Connected between the positive electrode side and the negative electrode side of the sixth base resistor 41
Is connected to the third voltage dividing resistor 42 at the auxiliary transistor 23.
1 is different from the circuit of the first embodiment shown in FIG. 1 described above, but is the same as the circuit of the first embodiment described above with reference to FIG. 1 except for this portion. The description of the part is omitted.

In the circuit of the third embodiment shown in FIG. 4, the power to the base of the auxiliary transistor 23 is supplied to the sixth base resistor 41 and the third base resistor 41.
The voltage is supplied from between the positive electrode and the negative electrode of the reverse bias power source 4 via the voltage dividing resistor 42, and the sixth base resistor 41 is turned on so that the auxiliary transistor 23 is turned on after the voltage of the signal base power source 13 is established. Resistance value and the third voltage dividing resistor 4
By adjusting the resistance value of 2, the erroneous turn-on of the IGBT 2 is prevented as in the case of the circuit of the first embodiment described above.

FIG. 5 is a circuit diagram showing a fourth embodiment of the present invention. This fourth embodiment circuit includes a seventh base resistor 51, a first constant voltage diode 52 and a fourth voltage dividing resistor 53. A series connection circuit is connected between the positive side and the negative side of the main gate power supply, and the connection point between the first constant voltage diode 52 and the fourth voltage dividing resistor 53 is connected to the base of the auxiliary transistor 23. Although different from the circuit of the first embodiment of FIG. 1 described above, the circuit other than this is the same as the circuit of the first embodiment described above with reference to FIG. 1, and therefore the description of the same parts will be omitted.

In the fourth embodiment circuit of FIG. 5, the power to the base of the auxiliary transistor 23 is supplied to the seventh base resistor 51 and the fourth base resistor 51.
Although the voltage is supplied from between the positive electrode and the negative electrode of the main gate power source via the voltage dividing resistor 53,
The constant voltage diode 52 is connected in series. This first
Due to the function of the constant voltage diode 52, the signal base power source 1
If the main gate power supply becomes lower than the preset value C after the voltage of 3 is established, the auxiliary transistor 23 is turned off, so that the short-circuit transistor 21 is turned on and the IGBT 2 is reverse biased, so that the IGBT 2 is erroneously turned on. It can be prevented.

FIG. 6 is an operation waveform diagram showing the operation of the circuit of the fourth embodiment of FIG. 5. FIG. 6 is a voltage change of the main gate power supply, FIG. 6 is a voltage change of the signal base power supply 13, and FIG. The operation of the short-circuit transistor 21 and the operation of the auxiliary transistor 23 are shown in FIG. 6, respectively. That is, from the time t 1 when the power is turned on to the time t 4 when the main gate power supply voltage reaches a preset value C, the auxiliary transistor 23
Is off (see FIG. 6), the short-circuit transistor 21 is on (see FIG. 6) during the period of t 1 to t 4 , therefore the signal transistor 11 is short-circuited and the off-transistor 6 is turned on, and the IGBT 2 is reverse-biased. Is turned off. Even when the voltage of the main gate power supply drops due to the power-off, t 5 from the value C described above to zero
In the period from t 8 to t 8 , the short-circuit transistor 21 is turned on, so that the signal transistor 11 is short-circuited and turned off.
Is turned on, the IGBT 2 is reverse-biased and turned off, and erroneous turn-on can be avoided. Note that t 2 and t
7 is a signal transistor 1 as shown in FIG.
1 is a time point at which the auxiliary transistor 23 is switched from on to off or from off to on, and t 3 and t 6 are switched from off to on, or from on to off, as shown in FIG. It's time.

FIG. 7 is a circuit diagram showing a fifth embodiment of the present invention. In the fourth embodiment circuit, an eighth base resistor 61, a second constant voltage diode 62 and a fifth voltage dividing resistor 63 are provided. A series connection circuit is connected between the positive side and the negative side of the reverse bias power source 4, and the second constant voltage diode 62 and the fifth voltage dividing resistor 6 are connected.
3 is connected to the base of the auxiliary transistor 23 at the point of connection with the third transistor, which is different from the circuit of the fourth embodiment of FIG. 5 described above, except for this portion the fourth embodiment of FIG. Since it is the same as the circuit, the description of the same parts will be omitted.

In the fifth embodiment circuit of FIG. 7, the power to the base of the auxiliary transistor 23 is supplied to the eighth base resistor 61 and the fifth base resistor 61.
Although the voltage is supplied from between the positive electrode and the negative electrode of the reverse bias power source 4 via the voltage dividing resistor 63, the second constant voltage diode 62 is connected in series to the eighth base resistor 61. By the action of the second constant voltage diode 62, when the voltage of the signal base power supply 13 is established and the reverse bias power supply 4 becomes lower than a preset value, the auxiliary transistor 23 is turned off, and thus the short-circuit transistor 21 is turned on. IGB
It is possible to reverse bias T2 and prevent this IGBT2 from being erroneously turned on.

[0025]

In the gate drive circuit of the voltage drive type semiconductor switch element, a main gate power supply for forward biasing or reverse biasing the voltage drive type semiconductor switching element and a signal for forward biasing or reverse biasing are generated. Signal base power supply. By the way, since the voltage change speeds of these power supplies are different, when the power is turned on / off, the voltage drive type semiconductor switch element may be erroneously turned on due to the difference of the voltage change speeds. Therefore, a short-circuit switch element is connected in parallel to the signal switch element that gives a signal to turn on either the on-switch element or the off-switch element, and the short-circuit is performed until the voltage of the signal base power supply exceeds a predetermined value. The switch element for turning on turns on the switch element for turning off. As a result, the voltage-driven semiconductor switch element is reverse biased and maintains the off state. Therefore, it is possible to avoid the possibility that the voltage-driven semiconductor switch element is erroneously turned on due to the difference in the voltage change speed when the power is turned on / off, even though the on signal is not applied. If the inverter is composed of this voltage-driven semiconductor switch element, there is a risk of an arm short-circuit accident if there is an erroneous turn-on, but the present invention has the effect of preventing such a danger.

[Brief description of drawings]

FIG. 1 is a circuit diagram showing a first embodiment of the present invention.

FIG. 2 is a circuit diagram showing a second embodiment of the present invention.

FIG. 3 is an operation waveform chart showing the operation of the circuit of the first embodiment of FIG.

FIG. 4 is a circuit diagram showing a third embodiment of the present invention.

FIG. 5 is a circuit diagram showing a fourth embodiment of the present invention.

6 is an operation waveform diagram showing the operation of the circuit of the fourth embodiment of FIG.

FIG. 7 is a circuit diagram showing a fifth embodiment of the present invention.

FIG. 8 is an IGB as a voltage-driven semiconductor switch element.
Circuit diagram showing a conventional example of a T gate drive circuit

9 is an operation waveform diagram showing the operation of the conventional circuit shown in FIG.

[Explanation of symbols]

 2 IGBT as a voltage drive type semiconductor switching element 3 Forward bias power source 4 Reverse bias power source 5 On transistor as an on switching element 6 Off transistor as an off switching element 9 First base resistance 11 Signal transistor as a signal switching element 12 Second Base Resistor 13 Signal Base Power Supply 14 Base Signal Circuit 21 Shorting Transistor as Shorting Switch Element 22 Third Base Resistor 23 Auxiliary Transistor as Auxiliary Switching Element 24 First Voltage Dividing Resistor 25 First Voltage Dividing Resistor 31 Fifth Base resistance 32 2nd voltage dividing resistance 41 6th base resistance 42 3rd voltage dividing resistance 51 7th base resistance 52 1st constant voltage diode 53 4th voltage dividing resistance 61 8th base resistance 62 2nd constant voltage diode 63 5th Voltage dividing resistance

Claims (5)

[Claims]
1. A main gate power supply which is a series connection of a forward bias power supply and a reverse bias power supply, and a series connection circuit of a first gate resistor and a signal switch element is connected in parallel, and a gate is connected to the gate of the signal switch element. A signal control means is connected, and a signal gate power supply is connected via a second gate resistor, and a gate of the ON switch element and a gate of the OFF switch element are connected to a connection point between the first gate resistor and the signal switch element. When the signal switch element is off in response to the signal from the gate signal control means, the forward bias power supply is turned on to the gate of the voltage-driven semiconductor switch element by turning on the on switch element. A forward bias current is passed to turn it on, or the signal switch element is turned on in response to a signal from the gate signal control means. In the gate drive circuit of the voltage drive type semiconductor switch element, the reverse bias power source supplies a reverse bias current to the gate of the voltage drive type semiconductor switch element by turning on the off switch element to turn it off. A short-circuit switch element is connected in parallel to the switch element, and a series connection circuit of a third gate resistor and an auxiliary switch element is connected in parallel to the main gate power source, and a connection point between the third gate resistor and the auxiliary switch element is connected. It is connected to the gate of the short-circuiting switch element, and a fourth gate resistor is inserted between the signal gate power source and the gate of the auxiliary switching element to connect the gate of the auxiliary switching element and the negative side of the main gate power source. A gate drive circuit for a voltage drive type semiconductor switch element, characterized in that a first voltage dividing resistor is inserted therebetween.
2. A main gate power supply which is a series connection of a forward bias power supply and a reverse bias power supply, and a series connection circuit of a first gate resistor and a signal switch element is connected in parallel, and a gate is connected to the gate of the signal switch element. A signal control means is connected, and a signal gate power supply is connected via a second gate resistor, and a gate of the ON switch element and a gate of the OFF switch element are connected to a connection point between the first gate resistor and the signal switch element. When the signal switch element is off in response to the signal from the gate signal control means, the forward bias power supply is turned on to the gate of the voltage-driven semiconductor switch element by turning on the on switch element. A forward bias current is passed to turn it on, or the signal switch element is turned on in response to a signal from the gate signal control means. In the gate drive circuit of the voltage drive type semiconductor switch element, the reverse bias power source supplies a reverse bias current to the gate of the voltage drive type semiconductor switch element by turning on the off switch element to turn it off. A short-circuit switch element is connected in parallel to the switch element, and a series connection circuit of a third gate resistor and an auxiliary switch element is connected in parallel to the main gate power source, and a connection point between the third gate resistor and the auxiliary switch element is connected. Connected to the gate of the short-circuit switch element, inserting a fifth gate resistor between the positive side of the main gate power source and the gate of the auxiliary switch element, and inserting the gate of the auxiliary switch element and the negative electrode of the main gate power source. A gate drive circuit for a voltage drive type semiconductor switch element, wherein a second voltage dividing resistor is inserted between the gate drive circuit and the side.
3. A main gate power supply which is a series connection of a forward bias power supply and a reverse bias power supply, and a series connection circuit of a first gate resistor and a signal switch element is connected in parallel, and a gate is connected to the gate of the signal switch element. A signal control means is connected, and a signal gate power supply is connected via a second gate resistor, and a gate of the ON switch element and a gate of the OFF switch element are connected to a connection point between the first gate resistor and the signal switch element. When the signal switch element is off in response to the signal from the gate signal control means, the forward bias power supply is turned on to the gate of the voltage-driven semiconductor switch element by turning on the on switch element. A forward bias current is passed to turn it on, or the signal switch element is turned on in response to a signal from the gate signal control means. In the gate drive circuit of the voltage drive type semiconductor switch element, the reverse bias power source supplies a reverse bias current to the gate of the voltage drive type semiconductor switch element by turning on the off switch element to turn it off. A short-circuit switch element is connected in parallel to the switch element, and a series connection circuit of a third gate resistor and an auxiliary switch element is connected in parallel to the main gate power source, and a connection point between the third gate resistor and the auxiliary switch element is connected. Connected to the gate of the short-circuit switch element, inserting a sixth gate resistor between the positive side of the reverse bias power source and the gate of the auxiliary switch element, and connecting the gate of the auxiliary switch element and the negative electrode of the reverse bias power source. A gate drive circuit of a voltage drive type semiconductor switch element characterized in that a third voltage dividing resistor is inserted between .
4. A main gate power supply which is a series connection of a forward bias power supply and a reverse bias power supply, and a series connection circuit of a first gate resistor and a signal switch element is connected in parallel, and a gate is connected to the gate of the signal switch element. A signal control means is connected, and a signal gate power supply is connected via a second gate resistor, and a gate of the ON switch element and a gate of the OFF switch element are connected to a connection point between the first gate resistor and the signal switch element. When the signal switch element is off in response to the signal from the gate signal control means, the forward bias power supply is turned on to the gate of the voltage-driven semiconductor switch element by turning on the on switch element. A forward bias current is passed to turn it on, or the signal switch element is turned on in response to a signal from the gate signal control means. In the gate drive circuit of the voltage drive type semiconductor switch element, the reverse bias power source supplies a reverse bias current to the gate of the voltage drive type semiconductor switch element by turning on the off switch element to turn it off. A short-circuit switch element is connected in parallel to the switch element, and a series connection circuit of a third gate resistor and an auxiliary switch element is connected in parallel to the main gate power source, and a connection point between the third gate resistor and the auxiliary switch element is connected. The auxiliary switch is connected to the gate of the short-circuiting switch element, and a series circuit of a seventh gate resistor and a first constant voltage diode is inserted between the positive side of the main gate power source and the gate of the auxiliary switch element. A voltage-driven semi-transistor characterized in that a fourth voltage dividing resistor is inserted between the gate of the device and the negative side of the main gate power source. The gate driving circuit of the body switch element.
5. A series connection circuit of a first gate resistor and a signal switch element is connected in parallel to a main gate power supply which is a series connection of a forward bias power supply and a reverse bias power supply, and a gate is connected to the gate of the signal switch element. A signal control means is connected, and a signal gate power supply is connected via a second gate resistor, and a gate of the ON switch element and a gate of the OFF switch element are connected to a connection point between the first gate resistor and the signal switch element. When the signal switch element is off in response to the signal from the gate signal control means, the forward bias power supply is turned on to the gate of the voltage-driven semiconductor switch element by turning on the on switch element. A forward bias current is passed to turn it on, or the signal switch element is turned on in response to a signal from the gate signal control means. In the gate drive circuit of the voltage drive type semiconductor switch element, the reverse bias power source supplies a reverse bias current to the gate of the voltage drive type semiconductor switch element by turning on the off switch element to turn it off. A short-circuit switch element is connected in parallel to the switch element, and a series connection circuit of a third gate resistor and an auxiliary switch element is connected in parallel to the main gate power source, and a connection point between the third gate resistor and the auxiliary switch element is connected. The auxiliary switch is connected to the gate of the short-circuiting switch element, and a series circuit of an eighth gate resistor and a second constant voltage diode is inserted between the positive electrode side of the reverse bias power source and the gate of the auxiliary switch element. Voltage driving, characterized in that a fifth voltage dividing resistor is inserted between the gate of the device and the negative electrode side of the reverse bias power source. The gate drive circuit of the semiconductor switching element.
JP27289293A 1993-11-01 1993-11-01 Gate drive circuit for voltage drive type semiconductor switching element Pending JPH07131971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27289293A JPH07131971A (en) 1993-11-01 1993-11-01 Gate drive circuit for voltage drive type semiconductor switching element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27289293A JPH07131971A (en) 1993-11-01 1993-11-01 Gate drive circuit for voltage drive type semiconductor switching element

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JPH07131971A true JPH07131971A (en) 1995-05-19

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8040162B2 (en) 2007-07-03 2011-10-18 Mitsubishi Electric Corporation Switch matrix drive circuit for a power element
JP2017098823A (en) * 2015-11-26 2017-06-01 株式会社デンソー Load drive circuit
US10038438B2 (en) 2014-05-30 2018-07-31 Mitsubishi Electric Corporation Power semiconductor element driving circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8040162B2 (en) 2007-07-03 2011-10-18 Mitsubishi Electric Corporation Switch matrix drive circuit for a power element
EP3537582A1 (en) 2007-07-03 2019-09-11 Mitsubishi Electric Corporation Drive circuit for power element
US10038438B2 (en) 2014-05-30 2018-07-31 Mitsubishi Electric Corporation Power semiconductor element driving circuit
JP2017098823A (en) * 2015-11-26 2017-06-01 株式会社デンソー Load drive circuit

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