JP2000183081A - Semiconductor manufacturing device and method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device by preventing it from being air caught up in due to variations in resin injection rate and by increasing the resin injection rate, in an underfill process of a chip-size package having a structure in which a semiconductor device is mounted in a facedown condition. SOLUTION: A protruded metal electrode 8 formed on an electrode 7 of a semiconductor 6 and an electrode 10 of an interposer substrate 5 are connected by a conductive connecting materials 9. In this case, the interposer substrate 5 mounted on the semiconductor 6 is supported on a heating stage 11 for sealing the resin, and a resin 12 is injected between the interposer substrate 5 and the semiconductor device 6. In injecting the resin, the heating stage 11 for sealing the resin is constituted, so that the central part of the interposer substrate 5 is set at a higher temperature that those of both sides of the interposer substrate 5. As a result, resin adhesion degree is lowered in the central part of the interposer substrate 5 due to high temperature, and the resin injection rate becomes high. Therefore, homogeneous resin injection can be ensured. After the resin injection, heating and hardening of the resin are conducted in an oven.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chip size package which protects an integrated circuit portion of a semiconductor, stably secures an electrical connection between an external device and a semiconductor element, and enables further high-density mounting. The present invention relates to a method and an apparatus for manufacturing a semiconductor device called [Chip Size Package] (hereinafter referred to as “CSP”).

[0002]

2. Description of the Related Art A conventional method of manufacturing a semiconductor device called a CSP will be described below with reference to the drawings.

FIG. 5 shows the structure of a resin-sealing heating stage used in a conventional semiconductor device manufacturing apparatus. 5A is a plan view of the upper surface of the heating stage for resin sealing, and FIG. 5B is a cross-sectional view of the heating stage for resin sealing. In FIG. 5, reference numeral 101 denotes a substrate made of a metal;
Is a suction hole, 103 is a heating element, and 111 is a heating stage for resin sealing.

The heating stage 111 for resin encapsulation has a heating element 103 embedded therein so that the entire surface of the stage can be heated at a constant temperature using a metal as the base material 101.

FIG. 6 is a process sectional view and a partial plan view showing a conventional CSP manufacturing method. A metal bump electrode 108 is formed on the electrode 107 of the semiconductor element 106.
(A), (b)), after the metal bump electrode 108 and the electrode 110 of the interposer substrate 104 are aligned, the metal bump electrode 108 and the electrode 110 of the interposer substrate 104 are connected by the conductive connecting material 109. (FIG. 6 (c)).

Next, the interposer substrate 104 on which the semiconductor element 106 is mounted is placed on the resin-sealing heating stage 111 maintained at an appropriate temperature, and is held by the suction holes 102 (see FIG. 5). A fixed amount of resin 112 is applied to one side of the square of the element 106 (FIG. 6D). At this time, the heating stage 11 for resin sealing is used.
1 may be horizontal or may be inclined in a direction in which the resin 112 easily enters between the semiconductor element 106 and the interposer substrate 104.

After confirming that the applied resin 112 has been injected between the semiconductor element 106 and the interposer substrate 104, a second resin application is performed on one side of the same square as the first resin application of the semiconductor element 106. I do. This operation is repeated, and after applying a predetermined amount, a resin fillet 113 (a portion where the resin 112 protrudes into the peripheral portion of the semiconductor element 106) is formed on the peripheral portion of the semiconductor element 106 on the heating stage 111 for resin sealing. Until it is done (Fig. 6
(E), (f)). At this time, the resin-sealing heating stage 111 may be inclined so that the resin fillet 113 is easily formed and to increase the forming speed. In FIG. 6F, the heating stage 11 for resin sealing is used.
1 is not shown.

Thereafter, the resin is cured by heating in an oven. Thus, the semiconductor device was manufactured.

[0009]

However, in the above-described conventional method for manufacturing a semiconductor device, in the resin sealing step,
Since the metal projecting electrodes 108 are arranged in the periphery of the semiconductor element 106, the sealing resin is transmitted before this part, and the central part of the semiconductor element 106 between the semiconductor element 106 and the interposer substrate 104 (in other words, the interposer substrate 104). (A central portion of the sealing resin) is delayed, and there is a problem that air is trapped and voids are generated. Further, as the semiconductor device becomes smaller, the semiconductor element 10 becomes smaller.
6 and the interposer substrate 104 became narrower, the penetration of the sealing resin into the central portion was easily delayed, and air was entrapped and voids were easily generated. These voids are a serious problem in terms of reliability, and have a drawback that there is a risk of inducing a popcorn phenomenon in the CSP secondary mounting stage.

The present invention solves the above-mentioned conventional problems. In an underfill process of a CSP having a structure in which a semiconductor element is mounted in a face-down state, air entrapment due to variation in resin injection speed is prevented and the injection speed is increased. It is an object of the present invention to provide a method and an apparatus for manufacturing a semiconductor device, which can improve the reliability of the semiconductor device.

[0011]

According to a first aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a metal projection electrode on an electrode of a semiconductor element; and forming a metal projection electrode on the semiconductor element and an electrode of an interposer substrate. A step of electrically connecting with a conductive adhesive material, a step of injecting a sealing resin between the semiconductor element and the interposer substrate while heating the interposer substrate, and a step of curing the injected sealing resin Wherein the heating of the interposer substrate in the sealing resin injecting step is performed such that the center of the interposer substrate is higher in temperature than the side portions on both sides of the center portion. .

According to a second aspect of the present invention, there is provided an apparatus for manufacturing a semiconductor device.
When injecting a sealing resin between an interposer substrate on which a semiconductor element is mounted and a semiconductor element, a semiconductor device manufacturing apparatus provided with a resin sealing heating stage for holding and heating the interposer substrate, The heating stage for sealing is characterized in that the heating is performed so that the center of the interposer substrate is higher in temperature than the side portions on both sides of the center.

According to a third aspect of the present invention, there is provided an apparatus for manufacturing a semiconductor device.
3. The apparatus for manufacturing a semiconductor device according to claim 2, wherein a distribution of a contact portion between the heating stage for resin sealing and the interposer substrate is such that a center portion of the interposer substrate is denser than a side portion. The surface is provided with irregularities.

According to a fourth aspect of the present invention, there is provided a semiconductor device manufacturing apparatus, comprising:
According to a second aspect of the present invention, in the semiconductor device manufacturing apparatus, the heating stage for resin sealing is a heating region only in a region in contact with a center portion of the interposer substrate.

According to a fifth aspect of the present invention, there is provided a semiconductor device manufacturing apparatus, comprising:
According to a fourth aspect of the present invention, in the semiconductor device manufacturing apparatus, a region of the resin-sealing heating stage that is in contact with a side portion of the interposer substrate is a cooling region.

According to a sixth aspect of the present invention, there is provided a semiconductor device manufacturing apparatus, comprising:
According to a second aspect of the present invention, in the semiconductor device manufacturing apparatus, the resin-sealing heating stage holds and heats only the center portion of the interposer substrate.

According to the method and apparatus for manufacturing a semiconductor device of the present invention, the sealing resin is injected such that the center of the interposer substrate is higher in temperature than the side portions on both sides thereof. At the center of the interposer substrate, where the injection of the sealing resin was apt to be delayed, the injection speed was higher than before, and a uniform resin injection form became possible, and air entrapment due to variations in the resin injection speed Can be prevented, and the reliability can be improved. Further, an increase in the resin injection speed can improve the production tact in mass production.

[0018]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 shows a structure of a resin-sealing heating stage used in an apparatus for manufacturing a semiconductor device according to an embodiment of the present invention. FIG. 1A is a plan view of the upper surface of the heating stage for resin sealing, and FIG. 1B is a cross-sectional view of the heating stage for resin sealing. In FIG. 1, 1 is a metal substrate, 2 (2a, 2b, 2c) are metal projections provided on the surface of the substrate 1, 3 is a heating element, 4 is a suction hole, and 11 is resin sealing. Heating stage. In FIG. 1, the substrate 1
Although the convex portion 2 is bonded to the substrate 1, the base material 1 and the convex portion 2 may be integrally formed.

The heating stage 11 for encapsulating resin in this embodiment, when the encapsulating resin 12 is injected between the interposer substrate 5 and the semiconductor element 6 as shown in FIG. The interposer substrate 5 is heated while holding it, so that the center of the interposer substrate 5 is heated higher than the side portions on both sides thereof. Therefore, the surface of the resin-sealing heating stage 11 has irregularities such that the distribution of the contact portion between the resin-sealing heating stage 11 and the interposer substrate 5 is dense at the center portion of the interposer substrate 5 and sparse at the side portions. Is provided. Heating stage for resin sealing 1
The convex portion 2b on the surface of the interposer substrate 5 is in contact with the interposer substrate 5, the convex portion 2a is in contact with the center portion of the interposer substrate 5, and the contact area becomes smaller as the distance from the center portion of the interposer substrate 5 decreases. , 2c. This makes it possible to form a temperature gradient such that the center of the interposer substrate 5 has a high temperature and the side portions have a low temperature.

FIG. 4 shows the heating stage 1 for resin sealing shown in FIG.
Semiconductor device (CS
4 (a) to 4 (d) are cross-sectional views showing the steps of a method for manufacturing P).
(F)), a partially transparent plan view (FIG. 4 (e)) and a partial plan view (FIG. 4 (g)).

A metal bump electrode 8 is provided on the electrode 7 of the semiconductor element 6.
Is formed (FIGS. 4A and 4B), and the metal bump electrode 8 is formed.
After the positioning of the metal bump electrode 8 and the electrode 10 of the interposer substrate 5 with the conductive connecting material 9 after the alignment of the electrode 10 with the electrode 10 of the interposer substrate 5 (FIG.
(C)).

Next, on the heating stage 11 for resin sealing,
The interposer substrate 5 on which the semiconductor element 6 is mounted is placed and held by the suction holes 4 (see FIG. 1), and a predetermined amount of the resin 12 is applied to one side of the square of the semiconductor element 6 on the interposer substrate 5 (FIG. d)). At this time, as a sealing resin to be used, a general liquid resin whose viscosity decreases with an increase in temperature and whose injection speed is improved may be used. Due to the high temperature at the center of the interposer substrate 5 due to the resin sealing heating stage 11, the resin viscosity decreases and the injection speed increases, so that a uniform resin injection mode (FIG. 4E) is obtained. This first resin injection is to be injected into the resin sealing heating stage 11 in the direction indicated by the arrow A in FIG. When injecting the resin, the resin-sealing heating stage 11 may be kept horizontal or may be inclined in a direction in which the resin easily enters. FIG. 4E does not show the heating stage 11 for resin sealing.

After confirming that the applied resin 12 has been injected between the semiconductor element 6 and the interposer substrate 5, a second resin application is performed on one side of the same square as the first resin application of the semiconductor element 6. I do. This operation is repeated, and after applying a predetermined amount, the resin is left on the heating stage for resin sealing 11 until the resin fillet 13 is formed around the semiconductor element 6 (FIGS. 4F and 4G). At this time, the resin-sealing heating stage 11 may be inclined so that the resin fillet 13 is easily formed and to increase the forming speed. Note that FIG. 4G does not show the heating stage 11 for resin sealing. In addition, all the first and second injections of the resin are performed by heating stage 1 for resin sealing.
1 is injected from the direction indicated by the arrow A in FIG.

After that, the resin is cured by heating in an oven. Thus, a semiconductor device can be manufactured.

As described above, according to the present embodiment, the use of the resin-sealing heating stage 11 allows the center portion of the interposer substrate 5 to be higher in temperature than the side portions on both sides thereof. Can be injected, the resin viscosity decreases at the center of the interposer substrate 5, and the injection speed rises at the center of the interposer substrate 5 where the penetration of the sealing resin was apt to be delayed. Thus, entrainment of air due to variation in resin injection speed can be prevented, and reliability can be improved.
Further, an increase in the resin injection speed can improve the production tact in mass production. Further, even when the semiconductor device is downsized and the distance between the semiconductor element 6 and the interposer substrate 5 is reduced, the sealing resin easily enters the center portion of the interposer substrate 5, so that the entrapment of air is prevented.
Reliability can be improved. As described above, the quality of the product and the production tact time can be improved, and a small-sized semiconductor device with lower cost and higher performance can be easily realized.

Next, the resin-sealing heating stage 11 shown in FIG.
A description will be given of the structure of another heating stage for resin encapsulation that can obtain the same effect as the case of using the resin sealing.

FIG. 2A is a plan view of an upper surface of a resin-sealing heating stage used in a semiconductor device manufacturing apparatus according to another embodiment of the present invention, and FIG. It is sectional drawing. In FIG. 2, reference numeral 3 denotes a heating element, 4 denotes a suction hole, 21 denotes a heating stage center portion made of a metal having a high thermal conductivity such as copper, and 22 denotes a base made of a metal having a low thermal conductivity. The regions of the base material 22 on both sides of the portion 21 are called heating stage side portions. 23 is a cooling pipe.

In the heating stage for resin sealing, the heating stage center portion 21 is made of a metal having high thermal conductivity such as copper, and the heating element 3 is embedded only in the heating stage center portion 21. A cooling pipe 23 is provided on the side of the heating stage to allow cooling water to flow. In this way, it is possible to form a temperature gradient in which the heating stage center portion 21 has a high temperature and the heating stage side portions on both sides thereof have a low temperature. By holding the interposer substrate 5 on which the semiconductor element 6 is mounted on the resin-sealing heating stage, it is possible to form a temperature gradient such that the center portion of the interposer substrate 5 has a high temperature and the side portions have a low temperature.

In the heating stage for sealing resin shown in FIG. 2, the cooling pipe 23 is provided on the side of the heating stage. However, the cooling pipe 23 is not necessarily provided. A certain temperature gradient can be formed in which the stage center portion 21 has a high temperature and the heating stage side portions on both sides thereof have a low temperature. The temperature gradient can be easily realized by using a very low thermal conductivity material such as plastic as a base material of the heating stage side portion.

FIG. 3A is a plan view of an upper surface of a heating stage for resin sealing used in a semiconductor device manufacturing apparatus according to still another embodiment of the present invention, and FIG. 3B is a heating stage for the same resin sealing. FIG. 3, reference numeral 3 denotes a heating element, 4 denotes a suction hole, and 31 denotes an interposer substrate 5 (FIG. 4).
A heating stage main body 32 for holding and heating the heating stage main body 32 is a main body support for fixing the heating stage main body 31. In FIG. 3, the main body supporting portions 32 are adhered to both sides of the heating stage main body 31, but the heating stage main body 31 and the main body supporting portions 32 are bonded.
May be integrally formed.

In the heating stage for resin sealing, the heating stage main body 31 is smaller than the interposer substrate 5, and only the center portion of the interposer substrate 5 is supported by the suction holes 4 and the heating elements 3 provided in the heating stage main body 31. And heating. This makes it possible to form a temperature gradient such that the center of the interposer substrate 5 has a high temperature and the side portions have a low temperature.

[0033]

As described above, according to the present invention, the sealing resin is injected so that the center of the interposer substrate is higher in temperature than the side portions on both sides of the interposer substrate. The viscosity has decreased, and the injection speed has increased at the center of the interposer substrate, where the infiltration of the sealing resin was easy to delay, so that a uniform resin injection form became possible, preventing the entrapment of air due to variations in the resin injection speed, Reliability can be improved. Further, an increase in the resin injection speed can improve the production tact in mass production. As described above, it is possible to improve product quality and production tact, easily realize a low-cost, high-performance, small-sized semiconductor device, and reduce the size of a semiconductor device used for information communication equipment, office electronic equipment, and the like. It also facilitates the conversion.

[Brief description of the drawings]

FIG. 1A is a plan view of an upper surface of a resin-sealing heating stage included in a semiconductor device manufacturing apparatus according to an embodiment of the present invention, and FIG. 1B is a cross-sectional view of the resin-sealing heating stage. .

FIG. 2A is a plan view of an upper surface of a resin-sealing heating stage included in a semiconductor device manufacturing apparatus according to another embodiment of the present invention, and FIG. 2B is a cross-sectional view of the resin-sealing heating stage. It is.

FIG. 3A is a plan view of an upper surface of a heating stage for resin sealing constituting a semiconductor device manufacturing apparatus according to still another embodiment of the present invention, and FIG. 3B is a cross section of the heating stage for resin sealing. FIG.

FIGS. 4A to 4D are cross-sectional views illustrating a method for manufacturing a semiconductor device according to an embodiment of the present invention, FIG. 4E is a perspective plan view illustrating the method for manufacturing the semiconductor device, and FIG. () Is a plan view showing the method for manufacturing the semiconductor device.

FIG. 5A is a plan view of an upper surface of a resin-sealing heating stage included in a conventional semiconductor device manufacturing apparatus, and FIG. 5B is a cross-sectional view of the resin-sealing heating stage.

6A to 6E are cross-sectional views illustrating a conventional method for manufacturing a semiconductor device, and FIG. 6F is a plan view illustrating the same manufacturing method.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Base material 2a, 2b, 2c Convex part 3 Heating element 4 Suction hole 5 Interposer board 6 Semiconductor element 7 Electrode of semiconductor element 8 Metal projection electrode 9 Conductive connection material 10 Electrode of interposer board 11 Heating stage for resin sealing 12 Sealing Stop resin 13 Resin fillet 21 Center of heating stage 22 Base material 23 Cooling tube

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Tetsuhiro Yamamoto 1-1, Sachimachi, Takatsuki-shi, Osaka Prefecture Matsushita Electronics Co., Ltd. (72) Inventor Takashi Yui 1-1-1, Sachimachi, Takatsuki-shi, Osaka Matsushita Electronics F term in the company (reference) 5F044 KK02 LL07 QQ01 RR19 5F061 AA01 BA03 CA04 CB13

Claims (6)

[Claims] A step of forming a metal bump electrode on an electrode of a semiconductor element; a step of electrically connecting the metal bump electrode on the semiconductor element to an electrode of an interposer substrate with a conductive adhesive material; A method of manufacturing a semiconductor device, comprising: a sealing resin injecting step of injecting a sealing resin between the semiconductor element and the interposer substrate while heating a substrate; and a step of curing the injected sealing resin. A method of manufacturing the semiconductor device, wherein the heating of the interposer substrate in the sealing resin injecting step is performed such that the temperature of the center of the interposer substrate is higher than that of the side portions on both sides of the center. 2. Injecting a sealing resin between an interposer substrate on which a semiconductor element is mounted and the semiconductor element,
A semiconductor device manufacturing apparatus provided with a resin-sealing heating stage for holding and heating the interposer substrate, wherein the resin-sealing heating stage has a center portion of the interposer substrate on both sides of the center portion. An apparatus for manufacturing a semiconductor device, wherein heating is performed so that the temperature is higher than that of a part. 3. The surface of the resin-sealing heating stage is provided with irregularities such that the distribution of contact portions between the resin-sealing heating stage and the interposer substrate is closer to the center of the interposer substrate than to the side portions. 3. The apparatus for manufacturing a semiconductor device according to claim 2, wherein: 4. The apparatus for manufacturing a semiconductor device according to claim 2, wherein the heating stage for resin sealing is a heating region only in a region in contact with a center portion of the interposer substrate. 5. The semiconductor device manufacturing apparatus according to claim 4, wherein a region of the resin-sealing heating stage that is in contact with the side portion of the interposer substrate is a cooling region. 6. The semiconductor device manufacturing apparatus according to claim 2, wherein the resin sealing heating stage holds and heats only the center portion of the interposer substrate.