JPH09306934A - Manufacture of chip semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To greatly reduce the size and wt. of a chip semiconductor device by forming recesses into the surface of a substrate, mounting semiconductor elements in the recesses and cutting off the substrate. SOLUTION: The manufacturing process comprises the steps of mounting semiconductor elements 6 in recesses 4 of a substrate 1, bonding these elements 6 to upper pattern electrodes 2 with wires 7, injecting a sealing liq. resin 8 into the recesses 4, hardening the resin 8 by heat or light, and cutting the substrate 1 along lines passing the substrate portions between the adjacent recesses 4 into chip semiconductor devices 9. This needs no parent lid and the semiconductor elements 6 in the recesses 4 of the substrate 1 are sealed with the liq. resin 8. This eliminates the need for examining the thickness and material of the substrate with taking account of the thermal stress of the entire substrate 1.

Description

Detailed Description of the Invention

[0001]

The present invention relates to a method for manufacturing a chip-type semiconductor device, and more particularly to a method for manufacturing a chip-type semiconductor device having a built-in semiconductor element.

[0002]

2. Description of the Related Art Conventionally, as a method of manufacturing a chip-type semiconductor device having a built-in semiconductor element, a method of manufacturing a chip-type semiconductor device in which a plurality of elements can be capped at once has been known. (Japanese Patent Laid-Open No. 4-1485
No. 53). In this conventional manufacturing method, as shown in FIG. 4, in order to connect the upper surface electrode and the lower surface electrode, a plurality of upper surface electrodes and lower surface electrodes are provided on each of the upper surface and the lower surface of the parent substrate 21 including a plurality of substrates. Through holes 22 are provided, conduction is provided by through holes 23, and elements 26 are respectively mounted on the parent substrate 21 between adjacent through holes 23, and each of the elements 26 and the upper surface electrode are electrically connected by wires 27. Connecting.

Next, as shown in FIG. 5, a recess 32 is formed in the lower surface.
The encapsulating parent lid 31 on which the elements are formed is fixed onto the parent substrate 21 from above the elements 26 to enclose each element 26 in the recess 32. Thereafter, the parent board 21 and the sealing parent lid 31 are separated for each element 26 along the line CC of FIG.
A plurality of chip components 41 as shown in FIG.

[0004]

However, in the above-mentioned conventional method, since each element 26 is sealed by using the sealing parent lid 31, the chip size is determined by the thickness of the parent substrate 21 and the sealing parent lid 31. Since the thickness is determined in particular, the manufactured chip-type component 41 is effective as a leadless package, but there is a limit in reducing the chip size.

If a heating process is used to bond the parent substrate 21 and the sealing parent lid 31, the parent substrate 21 and the sealing parent lid 31 are used.
Since the parent substrate 21 warps due to the difference in stress, it cannot be accurately separated when it is separated by dicing. When the heating process is not used, each element 26 is sealed using the sealing parent lid 31, so the sealing force is weak and the reliability is poor.

[0006] The present invention has been made in view of the above points,
It is an object of the present invention to provide a method of manufacturing a chip-type semiconductor device capable of manufacturing a small chip-type semiconductor device.

Another object of the present invention is to provide a more reliable method of manufacturing a chip type semiconductor device.

[0008]

In order to achieve the above-mentioned object, the present invention has a plurality of recesses each having a first pattern electrode and a semiconductor element therein, and a second pattern electrode being a back surface. Characterized in that the chip-type semiconductor device is manufactured by cutting off the substrate formed on the first and second pattern electrodes and electrically connected through the through hole.

Further, according to the present invention, a plurality of recesses each having a first pattern electrode formed therein are formed on the surface,
A first step of mounting a semiconductor element in each of the recesses of the substrate in which the second pattern electrode is formed on the back surface and the first and second pattern electrodes are electrically connected through the through holes; Wire bonding, a third step of injecting a liquid resin into the recesses in which the semiconductor elements are mounted and then hardening, and a fourth step of separating the substrate into the plurality of recesses. It is characterized by

According to the present invention, a recess is formed in the substrate to mount the semiconductor element on the substrate, and then the semiconductor element is mounted on the substrate, and then the substrate is separated. Therefore, the parent lid can be eliminated.

Further, in the present invention, since the semiconductor element in the recess of the substrate is sealed with the liquid resin, it is not necessary to consider the thickness and material of the substrate in consideration of the thermal stress of the entire substrate.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described with reference to the drawings. 1 (A), (B) and (C)
Shows a front view and a back view of a substrate used in an embodiment of a method for manufacturing a chip-type semiconductor device according to the present invention, and a cross-sectional view taken along the line CC ′ of FIG. A plurality of recesses 4 are formed in the substrate 1, and the upper surface pattern electrodes 2 are printed in the recesses 4. A bottom surface pattern electrode 5 is printed on the back surface of the substrate 1. The upper surface pattern electrode 2 and the lower surface pattern electrode 5 are electrically connected to each other through through holes 3.

FIG. 2 is a sectional view of the device in each step of one embodiment of the method of the present invention for manufacturing a chip type semiconductor device using the substrate 1 of FIG. First, as shown in FIG. 2A, the semiconductor element 6 is mounted in the concave portion 4 of the substrate 1 shown in FIG. 1, and the semiconductor element 6 and the upper surface pattern electrode 2 are bonded by the wire 7.

Next, as shown in FIG. 2B, a liquid resin 8 for sealing is injected into the recess 4 and is cured by heat or light by a curing process of the resin 8. Then, FIG. 2 (B)
2A, that is, the substrate 1 is cut along a line passing through the substrate portion between the adjacent concave portions 4 and the concave portion 4, and as shown in FIG. Device 9
To separate as. Here, in FIG. 2C, 8'denotes the liquid resin for sealing after curing. Thus, according to this embodiment, a plurality of chip-type semiconductor devices 9 as shown in the perspective view of FIG. 3 are manufactured by separating each semiconductor element 6.

According to the present embodiment, the semiconductor element 6 is mounted in the concave portion 4 formed in the substrate 1 instead of covering the substrate with the sealing parent lid. The thickness can be reduced to a thickness extremely close to the thickness of the semiconductor element 6. Further, it is not necessary to prepare the substrate 1 in consideration of thermal stress due to the material and size of the substrate 1, and the substrate 1 can be separated with high accuracy.

[0016]

As described above, according to the present invention,
After forming the concave portion on the substrate and mounting the semiconductor element in the concave portion, by separating the substrate, the parent lid is unnecessary, so that the thickness of the chip-type semiconductor device can be made as close as possible to the thickness of the semiconductor element, Therefore, the chip-type semiconductor device can be made significantly smaller and lighter than the conventional one.

Further, according to the present invention, the semiconductor element in the concave portion of the substrate is sealed with the liquid resin instead of fixing the sealing parent lid to the substrate, so that the thermal stress of the entire substrate is taken into consideration. Since it is not necessary to consider the thickness and material of the substrate, the substrate is not warped due to thermal stress, and the substrate can be separated with high precision, improving the reliability of the manufactured chip-type semiconductor device. can do.

[Brief description of drawings]

FIG. 1 is a front view, a back view and a sectional view of a substrate used in an embodiment of a substrate used in a manufacturing method of the present invention.

FIG. 2 is a cross-sectional view of an apparatus for explaining each step of the embodiment of the manufacturing method of the present invention.

3 is a perspective view of a chip-type semiconductor device manufactured by the manufacturing method of FIG.

FIG. 4 is a device cross-sectional view of a first step of an example of a conventional manufacturing method.

FIG. 5 is a sectional view of a device in a second step of an example of a conventional manufacturing method.

6 is a perspective view of a chip-type component manufactured by the manufacturing method of FIGS. 4 and 5. FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2 Upper surface pattern electrode 3 Through hole 4 Recess 5 Lower surface pattern electrode 6 Semiconductor element 7 Wire 8 Liquid resin for sealing 8'Liquid resin for sealing after curing 9 Chip type semiconductor device

Claims (3)

[Claims] 1. A plurality of recesses each having a first pattern electrode and a semiconductor element therein are formed on the surface, and a second recess is formed.
A chip-type semiconductor device is manufactured by separating the substrate on which the pattern electrodes of (1) are formed on the back surface and the first and second pattern electrodes are electrically connected through the through holes. Device manufacturing method. 2. A plurality of recesses, each having a first pattern electrode formed therein, are formed on the front surface, a second pattern electrode is formed on the back surface, and the first and second pattern electrodes are through holes. A first step of mounting a semiconductor element in each of the recesses of the substrate electrically connected via a substrate, a second step of wire bonding the semiconductor element, and a recess in which the semiconductor element is mounted. A method for manufacturing a chip-type semiconductor device, comprising: a third step of injecting a liquid resin into the substrate and then curing the resin; and a fourth step of separating the substrate into the plurality of recesses. 3. The method of manufacturing a chip type semiconductor device according to claim 2, wherein the liquid resin is cured by heat or light in the third step.