JP2000164115A - Field emission type electron source and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To emit electrons from a desirable area. SOLUTION: A field emission type electron source 10 is provided with a p-type silicon board 1 as a conductive board having an n-type area 8 as a conductor layer formed into stripe at a main surface side of the electron source 10, a field drift layer 6 formed of the porous multi-crystal silicon oxide formed on the n-type area 8 of the p-type silicon board 1, a multi-crystal silicon layer 3 formed between adjacent strong field drift layers 6, and a surface electrode 7 formed of a conductive thin film and formed into stripe, riding over the strong field drift layer 6 and the multi-crystal silicon layer 3 and crossing the n-type area 8. Electrons can be emitted from a desirable area of the surface electrode 7 by appropriately selecting the n-type area 8 and the surface electrode 7 for applying of voltage.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a field emission type electron source which emits an electron beam by electric field emission using a semiconductor material, and a method of manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, a thermally oxidized porous polycrystalline silicon layer is formed on a conductive substrate, and a surface electrode made of a metal thin film is formed on the thermally oxidized porous polycrystalline silicon layer. A flat field emission type electron source has been proposed (Japanese Patent Application No. 10-65592). This field emission type electron source has a front surface electrode serving as a positive electrode with respect to a conductive substrate, a direct current voltage is applied between the surface electrode and the conductive substrate, and a collector electrode disposed opposite to the surface electrode using the surface electrode as a cathode. And applying a DC voltage between them to cause electrons to be emitted from the surface of the front electrode.

In a display device using this kind of field emission type electron source, as shown in FIG. 24, a glass substrate 33 disposed opposite to a surface electrode 7 of a field emission type electron source 10 '.
A collector electrode 31 is formed in a stripe shape on a surface of the glass substrate 33 facing the field emission electron source 10 ′, and a phosphor layer 32 that emits visible light by an electron beam emitted from the surface electrode 7 is provided. It is formed so as to cover collector electrode 31. Here, the field emission type electron source 10 ′
A strong electric field drift layer 6 made of thermally oxidized porous polycrystalline silicon is formed on an n-type silicon substrate 1 ′ as a conductive substrate, and a surface electrode 7 is formed on the strong electric field drift layer 6 in a stripe shape. I have. The n-type silicon substrate 1 '
The ohmic electrode 2 'is formed on the back surface of the substrate.

In a display device, in order to emit electrons from a predetermined region of a planar field emission type electron source 10 ',
It is necessary to selectively apply a voltage to a region where electrons are to be emitted. For this reason, in this type of display device, the surface electrode 7 is formed in a stripe shape as described above, and the collector electrode 31 is formed in a stripe shape orthogonal to the surface electrode 7, and the collector electrode 31 and the surface electrode 7 are appropriately formed. By selectively applying a voltage (electric field), electrons are emitted only from the surface electrode 7 to which the voltage is applied. And
As for the emitted electrons, only the electrons emitted from a region where a voltage is applied to the opposing collector electrode 31 on the surface electrode 7 from which the electrons are emitted are accelerated, and the phosphor covering the collector electrode 31 is illuminated.

In short, in the display device having the configuration shown in FIG. 24, a specific surface electrode 7 and a specific collector electrode 3
By applying a voltage to 1 and 1, a portion of the phosphor layer 32 corresponding to a region where the two electrodes 7, 31 to which the voltage is applied intersects can be illuminated. By appropriately switching the surface electrode 7 and the collector electrode 31 to which a voltage is applied, images, characters, and the like can be displayed.

[0006] In short, in the above display device, the electrons emitted from the field emission type electron source 10 'are used to form the phosphor layer 3
In order to illuminate the second phosphor, it is necessary to apply a high voltage to the collector electrode 31 to accelerate the electrons. In the case of a display device using a field emission type electron source, a high voltage of several hundred V to several kV is usually applied to the collector electrode 31.

[0007]

However, FIG.
In the display device using the field emission type electron source 10 ′ having the configuration shown in FIG.
Since a surge voltage is generated when switching a high voltage, a switching element having a high withstand voltage is required, and there is a problem that the cost is increased. Further, for example, if the collector current flowing through the collector electrode 31 is 1 mA and the applied collector voltage is 1 kV, a switching element of 1 W is required for one collector electrode 31, which is required for the number of the collector electrodes 31. However, there is a problem that a very large device is formed only by the switching elements.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a field emission type electron source capable of emitting electrons from a desired region and a method of manufacturing the same.

[0009]

According to the first aspect of the present invention, there is provided a conductive substrate, and a strong electric field drift layer formed of an oxidized or nitrided porous polycrystalline semiconductor layer formed on one surface of the conductive substrate; A conductive thin film formed on the strong electric field drift layer, and by applying a voltage with the conductive thin film as a positive electrode to the conductive substrate, electrons injected from the conductive substrate drift through the strong electric field drift layer. A field emission type electron source emitted through the conductive thin film, wherein the conductive substrate has a conductive layer formed in a stripe shape on the one surface side, and the strong electric field drift layer overlaps the conductive layer. The conductive thin film is formed in a stripe shape, and the conductive thin film is formed in a stripe shape in a direction crossing the strong electric field drift layer, and a conductive layer to which a voltage is applied and a conductive thin film are appropriately selected. Do According to, since electrons are emitted only from a region of the conductive thin film to which a voltage is applied, the region intersects with the conductor layer to which the voltage is applied, electrons can be emitted from a desired region of the conductive thin film, In addition, when a display device is configured by arranging the collector electrode on the conductive thin film so as to face the same, a circuit for switching a high voltage of several hundred V to several kV applied to the collector electrode becomes unnecessary, and cost and cost can be reduced. The size can be reduced.

In a second aspect of the present invention, in the first aspect of the present invention, the conductive thin film includes a polycrystalline semiconductor layer formed on one surface of the conductive substrate so as to bury the adjacent high electric field drift layers. Is formed over the strong electric field drift layer and the polycrystalline semiconductor layer, so that disconnection of the conductive thin film can be prevented, reliability is improved, and the thickness of the conductive thin film is reduced. can do.

According to a third aspect of the present invention, in the first or second aspect of the present invention, the conductive substrate is formed of a semiconductor substrate having the conductive layer formed of a diffusion layer on the one surface side. And

According to a fourth aspect of the present invention, in the third aspect of the present invention, the conductivity type of the semiconductor substrate is p-type and the conductivity type of the conductor layer is n-type.

According to a fifth aspect of the present invention, in the first or second aspect, the conductive substrate comprises at least an insulating substrate and a diffusion layer formed on one surface of the insulating substrate. Since it is composed of a body layer, the use of an insulating substrate such as glass enables a larger area and lower cost as compared with a case where a semiconductor substrate such as a single crystal silicon substrate is used as a conductive substrate. .

According to a sixth aspect of the present invention, in the fifth aspect of the present invention, the conductive substrate includes a semiconductor layer formed on the one surface of the insulating substrate so as to bury the adjacent conductive layers. Disconnection of the conductive thin film can be prevented, reliability is improved, and the thickness of the conductive thin film can be reduced.

According to a seventh aspect of the present invention, in the sixth aspect of the invention, the conductivity type of the semiconductor layer is p-type and the conductivity type of the conductor layer is n-type. Can be insulated.

According to an eighth aspect of the present invention, in the second aspect of the present invention, the polycrystalline semiconductor layer and the conductor layer are made of semiconductors of different conductivity types, and an insulating layer is provided on the polycrystalline semiconductor layer. Therefore, adjacent conductive layers can be electrically insulated, and current can be prevented from flowing from the conductive substrate to the conductive thin film through the polycrystalline semiconductor layer.

According to a ninth aspect of the present invention, in the invention of the eighth aspect, the conductive substrate is formed of a semiconductor substrate having the conductive layer formed of a diffusion layer on the one surface side.

A tenth aspect of the present invention is characterized in that, in the ninth aspect, the conductivity type of the semiconductor substrate is p-type and the conductivity type of the conductor layer is n-type.

According to an eleventh aspect of the present invention, in the invention of the eighth aspect, the conductive substrate includes at least an insulating substrate and the conductive layer formed of a diffusion layer formed on one surface of the insulating substrate. With the use of an insulating substrate such as glass, the use of an insulating substrate such as glass enables a larger area and a lower cost as compared with a case where a semiconductor substrate such as a single crystal silicon substrate is used as a conductive substrate.

According to a twelfth aspect of the present invention, in the first aspect of the present invention, insulating layers are provided between the adjacent strong electric field drift layers on the one surface side of the conductive substrate. Can be electrically insulated, and a current can be prevented from flowing from the conductive substrate to the conductive thin film through the polycrystalline semiconductor layer.

According to a thirteenth aspect, in the twelfth aspect, the conductive substrate is made of silicon, and the insulating layer is made of silicon oxide.

According to a fourteenth aspect of the present invention, there is provided a conductive substrate, a strong electric field drift layer formed of an oxidized or nitrided porous polycrystalline semiconductor layer formed on one surface side of the conductive substrate, and Electrons injected from the conductive substrate drift through the strong electric field drift layer and are emitted through the conductive thin film by applying a voltage with the conductive thin film as the positive electrode to the conductive substrate. In the field emission type electron source, the conductive substrate has a conductive layer formed in a stripe shape on the one surface side, and the conductive thin film is formed in a stripe shape in a direction crossing the conductive layer. ,
The strong electric field drift layer is characterized by being provided between the conductor layer and the conductive thin film at a portion where the conductor layer and the conductive thin film overlap, and By appropriately selecting the conductive thin film, electrons are emitted only from a region of the conductive thin film to which the voltage is applied, which crosses the conductive layer to which the voltage is applied. The strong electric field drift layer is provided between the conductive layer and the conductive thin film at a portion where the conductive layer and the conductive thin film overlap, so that the adjacent strong electric field drift layer In order to switch a high voltage of several hundred V to several kV applied to the collector electrode when a display device is constructed by arranging a collector electrode facing the conductive thin film. Times Becomes unnecessary, it is possible to reduce the cost and size.

According to a fifteenth aspect, in the fourteenth aspect, an insulating layer is provided on a region where the strong electric field drift layer is not formed on the one surface side of the conductive substrate. Insulation between the strong electric field drift layers can be ensured, and current can be prevented from flowing from the conductive substrate to the conductive thin film through the polycrystalline semiconductor layer.

According to a sixteenth aspect of the present invention, there is provided a method of manufacturing a field emission type electron source according to the second aspect, wherein a polycrystalline semiconductor layer is formed on a conductive substrate so as to cover the conductive layer. By performing anodic oxidation treatment using the layer as an electrode during anodizing treatment, a portion of the polycrystalline semiconductor layer overlapping with the conductor layer is made porous, and the porous polycrystalline semiconductor layer is oxidized or nitrided. Forming a strong electric field drift layer, and then forming a conductive thin film crossing the strong electric field drift layer on the strong electric field drift layer, so that electrons are emitted only from a desired region of the conductive thin film. It is possible to provide a field emission type electron source that is capable of performing the anodic oxidation process using the conductive layer as an electrode during the anodic oxidation process, thereby overlapping the conductive layer in the polycrystalline semiconductor layer. Many parts Since the structure forming the strength with alignment between the electric field drift layer and the conductor layer is facilitated, it is possible to highly accurate patterns of strong electric field drift layer.

According to a seventeenth aspect of the present invention, there is provided the method of manufacturing a field emission type electron source according to the second or twelfth aspect, wherein an insulating layer is provided on a conductive substrate provided with the conductor layer on the one surface side. After forming, a predetermined region on the conductor layer in the insulating layer is opened, a polycrystalline semiconductor layer is formed on the entire surface on the one surface side of the conductive substrate, and then the conductor layer is subjected to an anodic oxidation process. By performing anodic oxidation using the electrode as an electrode, a portion of the polycrystalline semiconductor layer corresponding to the opening pattern of the insulating layer is made porous, and the porous polycrystalline semiconductor layer is oxidized or nitrided to cause a strong electric field drift. A field emission electron source capable of emitting electrons only from a desired region of the conductive thin film, comprising forming a layer and forming a conductive thin film patterned into a predetermined shape on the strong electric field drift layer. To provide In addition, since the portion of the polycrystalline semiconductor layer overlapping the conductor layer is made porous by using the conductor layer as an electrode during the anodic oxidation process and performing anodization, the polycrystalline semiconductor Since current does not flow through the portion of the layer formed on the insulating layer and current flows only through the portion over the conductor layer, only the portion over the conductor layer is made porous, and the strong electric field drift layer and the conductor The alignment with the layer is facilitated, and the pattern of the strong electric field drift layer can be made more precise.

According to a eighteenth aspect of the present invention, there is provided a method of manufacturing a field emission type electron source according to the second or twelfth aspect, wherein the electron source is provided on one surface side of the semiconductor substrate or on the whole surface of one surface of the insulating substrate. Forming an insulating layer having a predetermined opening pattern on the main surface side of the semiconductor layer; forming a conductive layer by selectively introducing impurities using the insulating layer as a mask to form a conductive substrate; An opening pattern of an insulating layer in the polycrystalline semiconductor layer is formed by forming a polycrystalline semiconductor layer on the entire surface on the one surface side of the substrate and thereafter performing anodic oxidation using the conductor layer as an electrode during anodic oxidation. Is formed by oxidizing or nitriding the porous polycrystalline semiconductor layer to form a strong electric field drift layer, and forming a conductive thin film patterned into a predetermined shape on the strong electric field drift layer. The pattern of the conductor layer can be made more precise, and the current does not flow to the portion of the polycrystalline semiconductor layer formed on the insulating layer, and the current flows only to the portion on the conductor layer. Because of the flow, only the portion on the conductor layer is made porous, and the alignment between the strong electric field drift layer and the conductor layer is facilitated, and the pattern of the strong electric field drift layer can be highly accurate. In addition, an insulating layer for insulation between the strong electric field drift layers can be easily provided.

According to a nineteenth aspect of the present invention, there is provided a method for manufacturing a field emission type electron source according to the fourth aspect, wherein an n-type impurity is introduced into a predetermined region on a main surface side of a p-type semiconductor substrate to thereby form a conductor layer. Is formed, a polycrystalline semiconductor layer is formed on the p-type semiconductor substrate, and anodization is performed using the conductor layer as an electrode during the anodic oxidation process, thereby overlapping the conductor layer of the polycrystalline semiconductor layer. The porous portion is made porous, the porous polycrystalline semiconductor layer is oxidized or nitrided to form a strong electric field drift layer, and a conductive thin film patterned into a predetermined shape is formed on the strong electric field drift layer. It is possible to provide a field emission type electron source capable of emitting electrons only from a desired region of a conductive thin film, and to use a conductor layer as an electrode during anodization. Anodizing treatment Since overlapping portions in the conductive layer of the polycrystalline semiconductor layer is made porous by performing,
By applying an electric field so that the conductive layer becomes positive and the counter electrode becomes negative during the anodizing process, the p-type semiconductor substrate and the conductive layer become reverse biased, so that current flows to the p-type silicon substrate side. And the current flows only through the polycrystalline semiconductor layer on the conductor layer, so that the alignment between the strong electric field drift layer and the conductor layer becomes easy, and the pattern of the strong electric field drift layer is highly accurate. Can be

According to a twentieth aspect of the present invention, there is provided the method of manufacturing a field emission type electron source according to the seventh aspect, wherein the conductive layer is formed by introducing an n-type impurity into a predetermined region of the p-type semiconductor layer. Forming a polycrystalline semiconductor layer on the p-type semiconductor layer on which the conductor layer has been formed, and performing anodic oxidation using the conductor layer as an electrode during anodic oxidation; A conductive thin film patterned in a predetermined shape on the strong electric field drift layer by forming a strong electric field drift layer by porosity of the portion overlapping the layer and oxidizing or nitriding the porous polycrystalline semiconductor layer. Forming a field emission type electron source capable of emitting electrons only from a desired region of the conductive thin film, and using the conductor layer as an electrode during anodizing. Utilize anode Since the portion of the polycrystalline semiconductor layer overlapping the conductor layer is made porous by performing the oxidation treatment, an electric field should be applied so that the conductor layer becomes positive and the counter electrode becomes negative during the anodic oxidation treatment. Thereby, the p-type semiconductor layer and the conductor layer are reverse biased, so that current can be prevented from flowing to the p-type semiconductor layer side, and current can flow only to the polycrystalline semiconductor layer on the conductor layer. The alignment between the strong electric field drift layer and the conductor layer is facilitated, and the pattern of the strong electric field drift layer can be made more precise.

According to a twenty-first aspect of the present invention, there is provided a method for manufacturing a field emission type electron source according to the fourth or twelfth aspect, wherein
Forming a conductive layer by introducing an n-type impurity into a predetermined region on the main surface side of the p-type semiconductor substrate to form a conductive layer, and then forming an insulating layer on the main surface of the p-type semiconductor substrate; Opening a predetermined region on the conductor layer among the layers, thereafter, forming a polycrystalline semiconductor layer on the entire surface on the main surface side of the p-type semiconductor substrate, further forming a back electrode on the back surface of the p-type semiconductor substrate,
Thereafter, the portion corresponding to the opening pattern of the insulating layer in the polycrystalline semiconductor layer was made porous by performing anodization using the conductor layer as an electrode during the anodization through the back electrode, and the porous layer was made porous. Forming a strong electric field drift layer by oxidizing or nitriding the polycrystalline semiconductor layer, and then forming a conductive thin film patterned in a predetermined shape on the strong electric field drift layer, It is possible to provide a field emission type electron source capable of emitting electrons only from a region, and to perform anodic oxidation using a conductor layer as an electrode during anodic oxidation, thereby forming a polycrystalline semiconductor layer. Of the polycrystalline semiconductor layer formed on the insulating layer, current does not flow, and current flows only in the portion on the conductive layer. Since flows, only the portion of the conductor layer is porous, strong with the alignment between the electric field drift layer and the conductor layer is facilitated, it is possible to highly accurate patterns of strong electric field drift layer. Furthermore, since anodization is performed using the n-type conductor layer as an electrode during anodization through the back electrode of the p-type semiconductor substrate, an electric field is applied so that the back electrode is positive and the counter electrode is negative. In this case, the p-type semiconductor substrate and the conductor layer are forward-biased and a current flows, so that there is no need to connect an electrode for each conductor layer, and the portion of the polycrystalline semiconductor layer on the conductor layer Alone can be easily made porous.

According to a twenty-second aspect of the present invention, there is provided the method of manufacturing a field emission type electron source according to the fourth aspect, wherein an n-type impurity is introduced into a predetermined region on the main surface side of the p-type semiconductor substrate to thereby form a conductive layer. After forming, a polycrystalline semiconductor layer is formed on the main surface of the p-type semiconductor substrate, a mask layer is formed on the polycrystalline semiconductor layer, a predetermined region of the mask layer on the conductor layer is opened,
Thereafter, a back surface electrode is formed on the back surface of the p-type semiconductor substrate, and then anodization is performed using the conductor layer as an electrode during the anodization process through the back surface electrode, thereby opening the mask layer of the polycrystalline semiconductor layer. After the portion corresponding to the pattern is made porous, the mask layer is removed, and then the porous polycrystalline semiconductor layer is oxidized or nitrided to form a strong electric field drift layer, which is patterned into the strong electric field drift layer into a predetermined shape. A field emission type electron source capable of emitting electrons only from a desired region of the conductive thin film, characterized in that a conductive thin film is formed,
In addition, since the portion of the polycrystalline semiconductor layer overlapping the conductor layer is made porous by using the conductor layer as an electrode during the anodic oxidation process and performing anodic oxidation treatment, the strong electric field drift layer and the conductive layer are electrically conductive. The alignment with the body layer is facilitated, and the pattern of the strong electric field drift layer can be made more precise. Furthermore, since the anodic oxidation treatment is performed using the conductor layer as an electrode during the anodic oxidation treatment through the back electrode of the p-type semiconductor substrate, only applying an electric field so that the back electrode is positive and the counter electrode is negative, Since the p-type semiconductor substrate and the conductor layer become forward-biased and current flows only in a portion of the polycrystalline semiconductor layer corresponding to the opening pattern of the mask layer, it is necessary to connect an electrode for each conductor layer. Instead, only the portion of the polycrystalline semiconductor layer on the conductor layer can be easily made porous.

According to a twenty-third aspect of the present invention, there is provided the method for manufacturing a field emission type electron source according to the eighth aspect, wherein a conductive material is provided on a conductive substrate provided with the conductive layer made of a diffusion layer on the one surface side. After forming the polycrystalline semiconductor layer so as to cover the layer, the conductive layer is used as an electrode during the anodic oxidation treatment, and anodizing treatment is performed so that a portion of the polycrystalline semiconductor layer overlapping the conductive layer becomes porous. Forming a strong electric field drift layer by oxidizing or nitriding the porous polycrystalline semiconductor layer, and then introducing impurities into the respective polycrystalline semiconductor layers of adjacent strong electric field drift layers. The conductivity type of the layer is made different from the conductivity type of the conductor layer, then an insulating layer is formed on each of the adjacent polycrystalline semiconductor layers of the strong electric field drift layer, and further formed on the strong electric field drift layer and the insulating layer. It is characterized by forming a conductive thin film patterned into a shape, capable of emitting electrons only from a desired region of the conductive thin film, insulating between adjacent strong electric field drift layers, and polycrystalline from a conductive substrate. It is possible to provide a field emission type electron source capable of preventing a current from flowing to a conductive thin film through a semiconductor layer, and to perform many anodic oxidation processes by using a conductive layer as an electrode during anodizing. Since the portion of the crystalline semiconductor layer overlapping the conductor layer is made porous, the alignment between the strong electric field drift layer and the conductor layer is facilitated, and the pattern of the strong electric field drift layer is made more precise. Can be.

According to a twenty-fourth aspect of the present invention, there is provided a method of manufacturing a field emission type electron source according to the tenth aspect, wherein an n-type impurity is introduced into a predetermined region on a main surface side of a p-type semiconductor substrate to form a conductive layer. Is formed, a polycrystalline semiconductor layer is formed on the main surface of the p-type semiconductor substrate, and anodization is performed using the conductor layer as an electrode during the anodization process, thereby forming a conductor of the polycrystalline semiconductor layer. The portion overlapped with the layer is made porous, and the porous polycrystalline semiconductor layer is oxidized or nitrided to form a strong electric field drift layer. Forming a p-type polycrystalline semiconductor layer by introducing a p-type impurity, then forming an insulating layer on the p-type polycrystalline semiconductor layer,
Further, a conductive thin film patterned in a predetermined shape is formed on the strong electric field drift layer and the insulating layer, so that electrons can be emitted only from a desired region of the conductive thin film and the adjacent strong thin films can be formed. It is possible to provide a field emission type electron source capable of preventing a current from flowing from a conductive substrate to a conductive thin film through a polycrystalline semiconductor layer by insulating the electric field drift layer, and providing an electrode when the conductive layer is anodized. By performing anodic oxidation treatment by using as a part, the portion of the polycrystalline semiconductor layer overlapping the conductor layer is made porous, so that the alignment between the strong electric field drift layer and the conductor layer becomes easy, The pattern of the strong electric field drift layer can be made more precise.

According to a twenty-fifth aspect of the present invention, there is provided the method for manufacturing a field emission type electron source according to the twelfth aspect, the fourteenth aspect or the fifteenth aspect, wherein a conductive layer is provided on the one surface side. After the insulating layer is formed, a predetermined region on the conductor layer in the insulating layer is opened, and a polycrystalline semiconductor layer is formed on the entire surface on the one surface side of the conductive substrate. At least a portion of each of the portions between the conductor layers is etched away, and the anodic oxidation process is performed using the conductor layer as an electrode during the anodic oxidation process, whereby a portion of the polycrystalline semiconductor layer corresponding to the opening pattern of the insulating layer. Is formed, and the porous polycrystalline semiconductor layer is oxidized or nitrided to form a strong electric field drift layer, which is patterned into a predetermined shape over the strong electric field drift layer and the conductive substrate. It is characterized in that a thin film is formed, it is possible to emit electrons only from a desired region of the conductive thin film, and it is possible to insulate between adjacent strong electric field drift layers, and from a conductive substrate to a conductive thin film through a polycrystalline semiconductor layer. It is possible to provide a field emission type electron source capable of preventing a current from flowing, and to perform an anodic oxidation treatment using the conductor layer as an electrode during the anodic oxidation treatment, thereby forming a conductive material in the polycrystalline semiconductor layer. Since the portion overlapping the layer is made porous, the alignment between the strong electric field drift layer and the conductor layer becomes easy, and the pattern of the strong electric field drift layer can be made more precise.

According to a twenty-sixth aspect of the present invention, in the twenty-fifth aspect of the present invention, the conductive layer selectively deposits impurities into a semiconductor layer provided on one surface of the insulating substrate or a predetermined portion on one surface side of the semiconductor substrate. In this case, the pattern of the conductor layer can be made more precise.

According to a twenty-seventh aspect, in the twenty-sixth aspect, the semiconductor layer or the semiconductor substrate is a p-type semiconductor, and the conductor layer is formed by introducing an n-type impurity.

According to a twenty-eighth aspect of the present invention, there is provided the method for manufacturing a field emission type electron source according to the twelfth aspect, the fourteenth aspect or the fifteenth aspect, wherein the semiconductor substrate is provided with a semiconductor layer on one surface of the insulating substrate. Forming an insulating layer on the main surface of the semiconductor substrate, opening a part of the insulating layer to form a conductor layer,
A conductive substrate is formed by forming a conductive layer composed of a diffusion layer by introducing impurities using the insulating layer as a mask, and then forming a polycrystalline semiconductor layer on the main surface of the conductive substrate so as to cover the conductive layer. Is formed, and then at least a part of each portion between the conductor layers in the polycrystalline semiconductor layer is removed by etching, and the conductor layer is used as an electrode during the anodic oxidation process to perform anodic oxidation treatment. A layer corresponding to the opening pattern of the insulating layer in the layer is made porous, and the porous polycrystalline semiconductor layer is oxidized or nitrided to form a strong electric field drift layer. A conductive thin film patterned in a predetermined shape over the upper surface is formed. Electrons can be emitted only from a desired region of the conductive thin film. It can shift layers to provide a field emission electron source capable of preventing current from flowing to the conductive thin film through the polycrystalline semiconductor layer from the conductive substrate is insulating,
In addition, since the portion of the polycrystalline semiconductor layer overlapping the conductor layer is made porous by using the conductor layer as an electrode during the anodic oxidation process and performing anodic oxidation treatment, the strong electric field drift layer and the conductive layer are electrically conductive. The alignment with the body layer is facilitated, and the pattern of the strong electric field drift layer can be made more precise.

According to a twenty-ninth aspect, in the twenty-eighth aspect, the semiconductor layer or the semiconductor substrate is a p-type semiconductor, and the conductor layer is formed by introducing an n-type impurity.

According to a thirtieth aspect of the present invention, there is provided the method of manufacturing a field emission type electron source according to the twelfth aspect, the fourteenth aspect or the fifteenth aspect, wherein the conductive substrate is provided with a conductive layer on one surface side. After forming an insulating layer on the conductive layer of the insulating layer, a predetermined region on the conductive layer is opened, and a polycrystalline semiconductor layer is formed on the entire surface on the one surface side of the conductive substrate. By performing anodic oxidation treatment by using as an electrode at the time of treatment, a portion of the polycrystalline semiconductor layer corresponding to the opening pattern of the insulating layer is made porous, and the porous polycrystalline semiconductor layer is oxidized or nitrided. After forming a strong electric field drift layer, a part of the polycrystalline semiconductor layer between the strong electric field drift layers was removed by etching, and then patterned into a predetermined shape over the strong electric field drift layer and the conductive substrate. It is characterized by forming an electroconductive thin film, capable of emitting electrons only from a desired region of the electroconductive thin film, insulating between adjacent strong electric field drift layers, and conducting from a conductive substrate through a polycrystalline semiconductor layer. It is possible to provide a field emission type electron source capable of preventing a current from flowing to a thin film, and to perform anodization by using a conductor layer as an electrode during anodization to form a polycrystalline semiconductor layer. Since the portion overlapping the conductor layer is made porous, the alignment between the strong electric field drift layer and the conductor layer becomes easy, and the pattern of the strong electric field drift layer can be made more precise.

According to a thirty-first aspect of the present invention, there is provided the method for manufacturing a field emission type electron source according to the twelfth aspect, the fourteenth aspect or the fifteenth aspect, wherein the semiconductor substrate is provided with a semiconductor layer on one surface of an insulating substrate. Forming an insulating layer on the main surface of the semiconductor substrate, opening a part of the insulating layer to form a conductor layer,
A conductive substrate is formed by forming a conductive layer composed of a diffusion layer by introducing impurities using the insulating layer as a mask, and then forming a polycrystalline semiconductor layer on the main surface of the conductive substrate so as to cover the conductive layer. Is formed, and then the portion corresponding to the opening pattern of the insulating layer in the polycrystalline semiconductor layer is made porous by performing anodic oxidation using the conductor layer as an electrode at the time of anodic oxidation. A strong electric field drift layer is formed by oxidizing or nitriding the polycrystalline semiconductor layer thus formed, and then a part of each polycrystalline semiconductor layer between the strong electric field drift layers is removed by etching. It is characterized in that a conductive thin film patterned into a predetermined shape is formed over a substrate, and it is possible to emit electrons only from a desired region of the conductive thin film and to form an adjacent strong electric current. It is possible to provide a field emission type electron source capable of insulating a drift layer and preventing a current from flowing from a conductive substrate to a conductive thin film through a polycrystalline semiconductor layer. By performing the anodic oxidation treatment using as a part, the portion of the polycrystalline semiconductor layer overlapping the conductor layer is made porous, so that the alignment between the strong electric field drift layer and the conductor layer becomes easy, The pattern of the strong electric field drift layer can be made more precise.

According to a thirty-second aspect of the present invention, there is provided a method of manufacturing a field emission type electron source according to the fourteenth aspect, wherein a polycrystalline semiconductor layer is formed on a conductive substrate so as to cover the conductive layer. By performing anodic oxidation using the layer as an electrode during anodic oxidation, a portion of the polycrystalline semiconductor layer overlapping the conductor layer is made porous, and the porous polycrystalline semiconductor layer is oxidized or nitrided. Then, a part of the polycrystalline semiconductor layer between the adjacent strong electric field drift layers and a part of the strong electric field drift layer between the regions where the conductive thin film is to be formed later are formed. Etching, and then forming a conductive thin film patterned in a predetermined shape over the strong electric field drift layer, the polycrystalline semiconductor layer, and the conductive substrate. A field emission type electron source capable of emitting electrons only from a desired region and insulating between adjacent strong electric field drift layers can be provided, and the conductor layer can be used as an electrode during anodization. Since the portion of the polycrystalline semiconductor layer that overlaps with the conductor layer is made porous by performing anodization treatment using the same, the alignment between the strong electric field drift layer and the conductor layer becomes easy, and The pattern of the electric field drift layer can be made more precise.

According to a thirty-third aspect of the present invention, there is provided the method for manufacturing a field emission type electron source according to the fifteenth aspect, wherein a polycrystalline semiconductor layer is formed on a conductive substrate so as to cover the conductive layer. By performing anodic oxidation treatment using the layer as an electrode at the time of anodizing treatment, a portion of the polycrystalline semiconductor layer overlapping with the conductor layer is made porous, and the porous polycrystalline semiconductor layer is oxidized or nitrided. Forming a strong electric field drift layer, and then removing a part of each polycrystalline semiconductor layer between adjacent strong electric field drift layers and a part of each strong electric field drift layer between regions where a conductive thin film to be formed later is to be formed. After removing by etching, an insulating layer is formed on the entire surface on the main surface side of the conductive substrate, a portion of the insulating layer that intersects with the conductor layer and overlaps with the strong electric field drift layer is opened, and And It is characterized by forming a conductive thin film patterned in a predetermined shape over the insulating layer, allowing electrons to be emitted only from the desired region of the conductive thin film and insulating between adjacent strong electric field drift layers. To provide a field emission type electron source capable of preventing a current from flowing from the conductive substrate to the conductive thin film through the polycrystalline semiconductor layer, and utilizing the conductive layer as an electrode during anodizing. By performing anodic oxidation, the portion of the polycrystalline semiconductor layer that overlaps the conductor layer is made porous, so that the alignment between the strong electric field drift layer and the conductor layer becomes easy, and the strong electric field drift The precision of the layer pattern can be improved.

According to a thirty-fourth aspect of the present invention, there is provided a method for manufacturing a field emission type electron source according to the fourteenth aspect, wherein a polycrystalline semiconductor layer is formed on a conductive substrate so as to cover the conductive layer, and then the polycrystalline semiconductor layer is formed. A part of each part of the conductor layer in the semiconductor layer and a part of each part between the regions where the conductive thin film is to be formed later are removed by etching, and then the conductor layer is used as an electrode during anodization. A portion of the polycrystalline semiconductor layer overlapping with the conductor layer is made porous by performing anodizing treatment using the same, and a strong electric field drift layer is formed by oxidizing or nitriding the porous polycrystalline semiconductor layer. Next, a conductive thin film patterned in a predetermined shape is formed over the strong electric field drift layer and the conductive substrate, and electrons are emitted only from a desired region of the conductive thin film. And a field emission type electron source capable of insulating between adjacent strong electric field drift layers can be provided. In addition, by performing anodic oxidation using the conductive layer as an electrode during anodic oxidation, Since the portion of the crystalline semiconductor layer overlapping with the conductor layer is made porous, it is easy to align the strong electric field drift layer and the conductor layer, and to improve the pattern of the strong electric field drift layer. Can be.

According to a thirty-fifth aspect of the present invention, there is provided a method of manufacturing a field emission electron source according to the twelfth or fifteenth aspect,
Forming a silicon nitride film in a stripe shape on the main surface of the silicon substrate, and selectively oxidizing a portion of the main surface of the silicon substrate that is not covered with the silicon nitride film to form an insulating layer made of silicon oxide; After removing the silicon nitride film, a conductive substrate is formed by introducing an impurity having a different conductivity type from that of the silicon substrate between adjacent insulating layers on the main surface side of the silicon substrate to form a conductive layer composed of a diffusion layer. And
A polycrystalline semiconductor layer is formed over the entire surface on the main surface side of the silicon substrate, and anodizing is performed using the conductor layer as an electrode during the anodizing process, thereby making the polycrystalline semiconductor layer porous, Forming a strong electric field drift layer by oxidizing or nitriding the formed polycrystalline semiconductor layer, and forming a conductive thin film patterned in a predetermined shape on the strong electric field drift layer; It is possible to provide a field emission type electron source capable of emitting electrons only from the substrate and insulating between adjacent strong electric field drift layers and preventing a current from flowing from the conductive substrate to the conductive thin film through the polycrystalline semiconductor layer. It is also possible to make the portion of the polycrystalline semiconductor layer overlapping the conductor layer porous by performing anodic oxidation using the conductor layer as an electrode during the anodic oxidation process. Runode, strong with the alignment between the electric field drift layer and the conductor layer is facilitated, it is possible to highly accurate patterns of strong electric field drift layer.

According to a thirty-sixth aspect of the present invention, there is provided the method for manufacturing a field emission type electron source according to the fifteenth aspect, wherein a silicon nitride film is formed in a stripe shape on the main surface of the silicon substrate, and A portion not covered with the silicon nitride film is selectively oxidized to form an insulating layer made of silicon oxide, and after removing the silicon nitride film, impurities are introduced using the insulating layer as a mask to form a conductive layer made of a diffusion layer. Forming a conductive layer by forming a body layer, and then forming a polycrystalline semiconductor layer on the main surface of the conductive substrate so as to cover the conductive layer; Part of each part of the interlayer is removed by etching, and anodic oxidation is performed using the conductive layer as an electrode during anodic oxidation to make the portion of the polycrystalline semiconductor layer overlapping the conductive layer porous. Forming a strong electric field drift layer by oxidizing or nitriding the porous polycrystalline semiconductor layer, and forming a conductive thin film patterned into a predetermined shape on the strong electric field drift layer; A field emission type electron source capable of emitting electrons only from a desired region of a thin film and insulating between adjacent strong electric field drift layers and preventing a current from flowing from a conductive substrate to a conductive thin film through a polycrystalline semiconductor layer. Can be provided,
In addition, since the portion of the polycrystalline semiconductor layer overlapping the conductor layer is made porous by using the conductor layer as an electrode during the anodic oxidation process and performing anodic oxidation treatment, the strong electric field drift layer and the conductive layer are electrically conductive. The alignment with the body layer is facilitated, and the pattern of the strong electric field drift layer can be made more precise.

According to a thirty-seventh aspect of the present invention, there is provided the method of manufacturing a field emission type electron source according to the fifteenth aspect, wherein a silicon nitride film is formed in a stripe shape on the main surface of the silicon substrate, A portion not covered with the silicon nitride film is selectively oxidized to form an insulating layer made of silicon oxide, and after removing the silicon nitride film, the silicon substrate is interposed between adjacent insulating layers on the main surface side of the silicon substrate. Forms a conductive layer by introducing impurities having different conductivity types to form a conductive layer composed of a diffusion layer, and then forms a polycrystalline semiconductor layer over the entire main surface side of the silicon substrate, By performing anodic oxidation using the layer as an electrode during anodic oxidation, a portion of the polycrystalline semiconductor layer overlapping the conductor layer is made porous, and the porous polycrystalline semiconductor layer is oxidized or nitrided. To form a strong electric field drift layer. Thereafter, a part of the polycrystalline semiconductor layer in each of the strong electric field drift layers is removed by etching, and then a conductive thin film patterned into a predetermined shape is formed on the strong electric field drift layer. It is possible to emit electrons only from a desired region of the conductive thin film, and the current flows from the conductive substrate to the conductive thin film through the polycrystalline semiconductor layer when the adjacent strong electric field drift layers are insulated. It is possible to provide a field emission type electron source that can prevent the occurrence of an anodization process using the conductor layer as an electrode during the anodization process, thereby overlapping the conductor layer of the polycrystalline semiconductor layer. Since the portion is made porous, the alignment between the strong electric field drift layer and the conductor layer becomes easy, and the pattern of the strong electric field drift layer is made more precise. Door can be.

[0046]

(Embodiment 1) FIG. 1 is a perspective view showing a schematic configuration of a display device using a field emission type electron source 10 of the present embodiment.
A glass substrate 33 is provided so as to face. Glass substrate 3
A collector electrode 31 is formed on the surface of the third electrode 3 facing the field emission electron source 10, and a phosphor layer 32 that emits visible light by electrons emitted from the field emission electron source 10 is formed on the collector electrode 31. It has been applied. In addition, the glass substrate 3
Numeral 3 is integrated with the field emission type electron source 10 using a glass spacer or the like (not shown), and the internal space surrounded by the glass substrate 33, the spacer and the field emission type electron source 10 has a predetermined degree of vacuum.

The field emission type electron source 10 is shown in FIGS.
As shown in FIG. 2, a p-type silicon substrate 1 as a conductive substrate having an n-type region 8 as a conductor layer formed in a stripe shape on the main surface side, and a portion on the n-type region 8 of the p-type silicon substrate 1 The formed strong electric field drift layer 6 made of oxidized porous polycrystalline silicon (that is, formed in a stripe shape overlapping the n-type region 8) and the adjacent strong electric field drift layer 6 are filled with p. A polycrystalline silicon layer 3 formed on the main surface of the n-type silicon substrate 1 and a strong electric field drift layer 6 and a polycrystalline silicon layer 3 formed in stripes in a direction orthogonal (intersecting) to the n-type region 8. And a surface electrode 7 formed of a conductive thin film (for example, a gold thin film) formed over the battery. Here, the strong electric field drift layer 6 forms the polycrystalline silicon layer 3 over the entire surface on the main surface side of the p-type silicon substrate 1, and then anodizes a part of the polycrystalline silicon layer 3. It can be formed by making it porous and further oxidizing it by rapid thermal oxidation. The carrier concentration in the n-type region 8 is 1 × 10 ¹⁸ cm ⁻³ to 5
× 10 ¹⁹ cm ⁻³ .

In the field emission type electron source 10 of the present embodiment, the n-type region 8 formed in a stripe and the surface electrode 7 formed in a stripe orthogonal to the n-type region 8 are formed.
And a matrix, so that a voltage is applied n
By appropriately selecting the shape region 8 and the surface electrode 7, of the surface electrodes 7 to which the voltage is applied, n
Since electrons are emitted only from a region intersecting the shaped region 8, electrons can be emitted from a desired region of the surface electrode 7. The contact to the n-type region 8 is formed by etching a part of the strong electric field drift layer 6 to expose a part of the surface of the n-type region 8 as shown in FIG. Is done.

Further, when the display device as shown in FIG. 1 is constructed, it is not necessary to form the collector electrode 31 in a stripe shape as in the display device shown in FIG. Or several k
A circuit for switching a high voltage of V is not required, so that cost reduction and size reduction can be achieved. In the field emission electron source 10 of the present embodiment, the voltage applied between the n-type region 8 and the surface electrode 7 is about 10 V to 30 V. The polycrystalline silicon layer 3 is interposed between the adjacent strong electric field drift layers 6, the surface of the strong electric field drift layer 6 and the surface of the polycrystalline silicon layer 3 are formed on the same plane, and the surface electrode 7 is Since it is formed over the strong electric field drift layer 6 and the polycrystalline silicon layer 3, disconnection of the surface electrode 7 can be prevented, reliability is improved, and the thickness of the surface electrode 7 can be reduced. it can.

In the present embodiment, the p-type silicon substrate 1 is used as the conductive substrate, and the n-type region (diffusion layer) 8 is used as the conductive layer. However, the diffusion layer is not limited to the n-type region 8. For example, a conductor layer made of a metal thin film such as chromium may be provided on an insulating substrate such as glass. In the present embodiment, the strong electric field drift layer 6 is made of oxidized porous polycrystalline silicon, but the strong electric field drift layer 6 is made of porous polycrystalline silicon, or other oxidized or nitrided porous It may be constituted by a polycrystalline semiconductor layer. Further, although gold is used as the material of the surface electrode 7, the material of the surface electrode 7 is not limited to gold, and may be any material having a small work function. In addition to gold, aluminum, chromium, tungsten , Nickel, platinum, and alloys of these metals can be used. Further, in the present embodiment, the thickness of the surface electrode 7 is set to 10 nm, but this thickness is not particularly limited.

Hereinafter, the field emission type electron source 10 of this embodiment will be described.
Will be described with reference to FIGS. 4A to 4F.

First, a mask for thermal diffusion or ion implantation is provided on the main surface of the p-type silicon substrate 1, and phosphorus (P) is deposited on the main surface side of the p-type silicon substrate 1 by a thermal diffusion technique or an ion implantation technique. ), A striped n-type region 8 is formed,
The structure shown in FIG. 4A is obtained by removing the mask.

Next, a film thickness of 1.5 μm is formed on the main surface of the p-type silicon
The structure shown in FIG. 1B is obtained by forming the non-doped polycrystalline silicon layer 3 of m. Where LP
The film forming conditions of the CVD method are as follows: substrate temperature is 610 ° C., SiH ₄
The gas flow rate was 600 sccm and the degree of vacuum was 20 Pa. The method of forming the polycrystalline silicon layer 3 is LPCV
The method is not limited to the method D. For example, after forming an amorphous silicon layer by a sputtering method or a plasma CVD method, the amorphous silicon layer is crystallized by performing an annealing process to form the polycrystalline silicon layer 3. May be used.

Next, a photoresist layer serving as a mask layer is applied and formed on the polycrystalline silicon layer 3, and a portion patterned above the n-type region 8 is opened by photolithography to form a mask patterned in a stripe shape. The resist layer 9 is formed, and the structure shown in FIG. 4C is obtained.

Next, after forming an ohmic electrode (not shown) on the back surface of the p-type silicon substrate 1, a 55 wt% aqueous solution of hydrogen fluoride and ethanol were mixed at a ratio of 1: 1, and an electrolytic solution cooled to 0 ° C. was used. A platinum electrode (not shown) is connected to a negative electrode, p
Using the silicon substrate 1 as a positive electrode and the resist layer 9 as a mask for anodic oxidation, the exposed portion of the polycrystalline silicon layer 3 is subjected to anodic oxidation at a constant current while irradiating with light, so that The porous polycrystalline silicon layer 5 is formed (in a stripe form), and then the resist layer 9 is removed to obtain the structure shown in FIG. Here, in the present embodiment, as the conditions of the anodic oxidation treatment, the current density was constant at 20 mA / cm ² , the anodic oxidation time was 15 seconds, and light irradiation was performed by a 500 W tungsten lamp during the anodic oxidation treatment. In the present embodiment, the porosity of the porous polycrystalline silicon layer 5 is made substantially uniform while the current density during the anodic oxidation process is kept constant, but the porosity can be reduced by changing the current density during the anodic oxidation process. A structure in which a high polycrystalline silicon layer and a low porosity polycrystalline silicon layer are alternately stacked may be employed, or a structure in which the porosity continuously changes in the thickness direction may be employed. In this embodiment, the polycrystalline silicon layer 3 is made porous to a depth reaching the p-type silicon substrate 1 in the thickness direction. Is also good.

Next, the porous polycrystalline silicon layer 5 is subjected to rapid thermal oxidation (RTO) in a dry oxygen atmosphere by using a lamp annealing apparatus, so that a strong electric field drift layer made of thermally oxidized porous polycrystalline silicon is obtained. 6 is formed, and the structure shown in FIG. Here, conditions for the rapid thermal oxidation were an oxidation temperature of 900 ° C. and an oxidation time of 1 hour.

Thereafter, a conductive thin film (gold thin film) is formed on the strong electric field drift layer 6 and the polycrystalline silicon layer 3 by a vapor deposition method using a metal mask having a stripe-shaped opening pattern. The striped surface electrode 7 made of a thin film is formed, and the field emission electron source 10 having the structure shown in FIG. In addition, as a patterning method of the surface electrode 7, a photolithography technique and an etching technique may be used, or a photolithography technique and a lift-off method may be used.

According to the method for manufacturing a field emission electron source of the present embodiment, it is possible to provide a field emission electron source 10 capable of emitting electrons only from a desired region of the surface electrode 7.

Although the resist layer 9 was used as a mask layer during the anodic oxidation treatment, a silicon oxide film or a silicon nitride film formed in a stripe shape may be used as the mask layer. When used, the step of removing the mask layer after the anodic oxidation treatment is unnecessary.

(Embodiment 2) FIG. 5 is a perspective view showing a schematic configuration of a field emission type electron source 10 of the present embodiment, and is used for a display device as in Embodiment 1.

In the first embodiment, the p-type silicon substrate 1 in which the stripe-shaped n-type region 8 is formed on the main surface side is used as the conductive substrate. And an insulating substrate 11 made of glass,
A non-doped polycrystalline silicon layer 23 formed on one surface of the insulating substrate 11 and an n-type region (diffusion layer) as a conductor layer formed in a stripe shape on the polycrystalline silicon layer 23
8 ′. The same components as those in the first embodiment are denoted by the same reference numerals.

As shown in FIG. 5, in the field emission type electron source 10 of the present embodiment, an n-type region 8 ′ (hereinafter, referred to as a lower electrode 8) is formed in a stripe shape on one surface side of an insulating substrate 11. Is formed. Further, the strong electric field drift layer 6 made of oxidized porous polycrystalline silicon formed on the lower electrode 8 ′ (the portion overlapping the lower electrode 8 ′) and the space between the adjacent strong electric field drift layers 6 are buried respectively. The polycrystalline silicon layer 3 formed on the polycrystalline silicon layer 23 and the stripe formed in a direction orthogonal (intersecting) to the lower electrode 8 ′ and straddling the strong electric field drift layer 6 and the polycrystalline silicon layer 3. And a surface electrode 7 formed of a formed conductive thin film (for example, a gold thin film). The contact to the lower electrode 8 'is formed by etching a part of the strong electric field drift layer 6 to expose a part of the surface of the lower electrode 8' as shown in FIG. Is done.

Thus, in the field emission type electron source 10 of the present embodiment, a matrix is composed of the lower electrode 8 'formed in a stripe shape and the surface electrode 7 formed in a stripe shape orthogonal to the lower electrode 8'. Therefore, by appropriately selecting the lower electrode 8 ′ to which a voltage is applied and the surface electrode 7, only the region of the surface electrode 7 to which the voltage is applied intersects with the lower electrode 8 ′ to which the voltage is applied. Thus, electrons can be emitted from a desired region of the surface electrode 7.

In the present embodiment, the strong electric field drift layer 6 is made of oxidized porous polycrystalline silicon. However, the strong electric field drift layer 6 is made of porous polycrystalline silicon, It may be constituted by a porous polycrystalline semiconductor layer described above.

Hereinafter, the field emission type electron source 10 of this embodiment will be described.
Will be described with reference to FIGS. 6 (a) to 6 (e).

First, after a non-doped polycrystalline silicon layer 23 having a thickness of 1 μm is formed on one surface of an insulating substrate 11 made of glass by LPCVD, a mask for thermal diffusion or ion implantation is provided. Crystalline silicon layer 23
Then, by introducing a dopant (n-type impurity) such as phosphorus (P) by a thermal diffusion technique or an ion implantation technique, a stripe-shaped lower electrode 8 'is formed, and the mask is removed by removing the mask shown in FIG. ) Is obtained.

Next, L is applied to the one surface side of the insulating substrate 11 so as to cover the polycrystalline silicon layer 23 and the lower electrode 8 '.
The structure shown in FIG. 6B is obtained by forming the non-doped polycrystalline silicon layer 3 having a thickness of 1.5 μm by the PCVD method.

Next, a 55 wt% aqueous solution of hydrogen fluoride and ethanol were mixed at a ratio of 1: 1 and an electrolytic solution cooled to 0 ° C. was used. The platinum electrode (not shown) was used as a negative electrode, and the lower electrode 8 ′ was used as a positive electrode. By performing anodic oxidation at a constant current while irradiating the polycrystalline silicon layer 3, the lower electrode 8 '
The porous polycrystalline silicon layer 5 is formed in a stripe shape corresponding to (overlapped), and the structure shown in FIG. 6C is obtained.
In this embodiment, as the conditions of the anodic oxidation treatment, the current density was constant at 20 mA / cm ² , the anodic oxidation time was 15 seconds, and light irradiation was performed by a 500 W tungsten lamp during the anodic oxidation treatment.

Next, the porous polycrystalline silicon layer 5 is thermally oxidized in a dry oxygen atmosphere by a rapid thermal oxidation (RTO) method using a lamp annealing apparatus, so that the porous polycrystalline silicon layer 5 is made of thermally oxidized porous polycrystalline silicon. Strong electric field drift layer 6
Is formed, and the structure shown in FIG. 6D is obtained. Here, the conditions of rapid thermal oxidation are as follows:
C. and the oxidation time was 1 hour.

Thereafter, a conductive thin film (gold thin film) is deposited on the strong electric field drift layer 6 and the polycrystalline silicon layer 3 on the one surface side of the insulating substrate 1 using a metal mask having a stripe-shaped opening pattern. By forming by the method, a stripe-shaped surface electrode 7 orthogonal to the strong electric field drift layer 6 is formed, and the field emission type electron source 10 having the structure shown in FIG.

Thus, according to the manufacturing method described in the present embodiment, it is possible to provide the field emission type electron source 10 capable of emitting electrons only from a desired region of the surface electrode 7. The lower electrode 8 ′ (conductor layer) is used as an electrode during the anodic oxidation process to perform anodic oxidation, thereby making the portion of the polycrystalline silicon layer 3 overlapping with the lower electrode 8 ′ porous. Therefore, the alignment between the strong electric field drift layer 6 and the lower electrode 8 ′ becomes easy, and the pattern of the strong electric field drift layer 6 can be made more precise.

(Embodiment 3) The basic configuration of a field emission type electron source of this embodiment is substantially the same as that of Embodiment 1, and FIG.
As shown in (c), the difference is that an insulating layer 9 is provided between the p-type silicon substrate 1 and the polycrystalline silicon layer 3.
Note that the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof will be omitted.

In the field emission type electron source 10 having the structure of the first embodiment shown in FIGS. Electrons may drift, and in this case, electrons are emitted from the surface electrode 7 above the n-type region 8 to which no voltage is applied, which may cause crosstalk in the display device. Also,
Current may leak from the n-type region 8 serving as a conductor layer or the p-type silicon substrate 1 (in short, a conductive substrate) to the surface electrode 7 through the polycrystalline silicon layer 3.

However, in the field emission type electron source 10 of the present embodiment, the insulating layer 9 is provided, so that the n-type region 8 adjacent to the n-type region 8
Crosstalk and current leakage due to drift of electrons to the upper strong electric field drift layer 6 can be reduced.
In the present embodiment, the strong electric field drift layer 6 is also made of oxidized porous polycrystalline silicon. However, the strong electric field drift layer 6 is made of nitrided porous polycrystalline silicon or other oxidized or nitrided porous polycrystalline silicon. It may be constituted by a polycrystalline semiconductor layer.

Hereinafter, the field emission type electron source 10 of this embodiment will be described.
Will be described with reference to FIGS. 7 and 8. FIG.

First, a mask for thermal diffusion or ion implantation is provided on the main surface of the p-type silicon substrate 1, and phosphorus (P) is deposited on the main surface side of the p-type silicon substrate 1 by a thermal diffusion technique or an ion implantation technique. ), A stripe-shaped n-type region 8 is formed, and the mask is removed to remove the n-type region 8 shown in FIG.
The structure shown in (a) is obtained.

Next, an insulating layer 9 made of a 0.5 μm-thick silicon oxide film is deposited by LPCVD on the entire surface of the main surface of the p-type silicon substrate 1 on which the n-type region 8 has been formed. A region substantially corresponding to region 8 (on n-type region 8)
7 is removed by etching using a photolithography technique and an etching technique.
The structure shown in (b) is obtained.

Next, a non-doped polycrystalline silicon layer 3 having a thickness of 1.5 μm is formed on the entire surface on the main surface side of the p-type silicon substrate 1 by the LPCVD method. The back electrode 2 made of an aluminum alloy having a film thickness of 1 μm is formed as shown in FIG.
The structure shown in (c) is obtained.

Next, a 55 wt% aqueous solution of hydrogen fluoride and ethanol were mixed at a ratio of 1: 1 and an electrolytic solution cooled to 0 ° C. was used. A platinum electrode (not shown) was used as a negative electrode, and a back electrode 2 was used as a positive electrode. By performing anodic oxidation at a constant current while irradiating the polycrystalline silicon layer 3 with light, a porous polycrystalline silicon layer 3 is formed at a portion on the n-type region 8 (a portion where the insulating layer 9 is opened). A crystalline silicon layer 5 is formed, and then the back surface electrode 2 is removed to obtain a structure shown in FIG.
The structure shown in FIG. Here, in this embodiment, the current density is set to 20 mA /
The anodic oxidation time was set to 15 seconds with a constant cm ² , and light irradiation was performed by a 500 W tungsten lamp during the anodic oxidation treatment.

Next, the porous polycrystalline silicon layer 5 is thermally oxidized in a dry oxygen atmosphere by a rapid thermal oxidation (RTO) method using a lamp annealing apparatus, thereby being made of thermally oxidized porous polycrystalline silicon. Strong electric field drift layer 6
Is formed, and the structure shown in FIG. 8B is obtained. Here, the conditions of rapid thermal oxidation are as follows:
C. and the oxidation time was 1 hour.

Thereafter, a conductive thin film (gold thin film) is formed on the polycrystalline silicon layer 3 and the strong electric field drift layer 6 using a metal mask having a stripe-shaped opening pattern by a vapor deposition method. A stripe-shaped surface electrode 7 orthogonal to the drift layer 6 is formed.
The field emission type electron source 10 having the structure shown in FIG.

Thus, according to the manufacturing method of the present embodiment, it is possible to provide a field emission type electron source 10 capable of emitting electrons only from a desired region of the surface electrode 7. In addition, since the portion overlapping the n-type region 8 in the polycrystalline silicon layer 3 is made porous by using the n-type region 8 as the conductor layer as an electrode during the anodic oxidation process, the portion is made porous. Since current does not flow through the portion of the polycrystalline silicon layer 3 formed on the insulating layer 9 and current flows only through the portion above the n-type region 8, only the portion above the n-type region 8 is made porous. The alignment between the strong electric field drift layer 6 and the n-type region 8 is facilitated, and the strong electric field drift layer 6
Can be made highly accurate. Further, since the anodic oxidation process is performed using the n-type region 8 as an electrode during the anodic oxidation process through the back surface electrode 2 of the p-type semiconductor substrate 1,
By simply applying an electric field so that the back electrode 2 is positive and the platinum electrode (counter electrode) is negative, the p-type silicon substrate 1 and the n-type region 8 become forward-biased and current flows. It is not necessary to connect an electrode for each n-type region 8, and only the portion of the polycrystalline silicon layer 3 on the n-type region 8 can be easily made porous.

(Embodiment 4) FIG. 9 is a perspective view showing a schematic structure of a display device using the field emission type electron source 10 of the present embodiment. Is arranged. A collector electrode 31 is formed on a surface of the glass substrate 33 facing the field emission electron source 10. 32 is applied. Note that the same components as those in the first embodiment are denoted by the same reference numerals.

Incidentally, in the field emission type electron source 10 having the structure of the first embodiment shown in FIGS. Electrons may drift, and in this case, electrons are emitted from the surface electrode 7 above the n-type region 8 to which no voltage is applied, which may cause crosstalk in the display device. Also,
Current may leak from the n-type region 8 serving as a conductor layer or the p-type silicon substrate 1 (in short, a conductive substrate) to the surface electrode 7 through the polycrystalline silicon layer 3.

The field emission type electron source 10 of the present embodiment has a configuration for preventing the occurrence of this kind of problem. As shown in FIGS. 9 to 11, the field emission type electron source 10 of the present embodiment has a p-type conductive substrate having an n-type region 8 as a conductive layer formed in a stripe shape on the main surface side.
Silicon substrate 1 and n-type region 8 of p-type silicon substrate 1
A strong electric field drift layer 6 made of oxidized porous polycrystalline silicon formed thereon (that is, formed in a stripe shape overlapping the n-type region 8), and a polycrystalline silicon layer formed on the sidewall of the strong electric field drift layer P formed between the crystalline silicon layer 3 and the polycrystalline silicon layer 3 between the adjacent strong electric field drift layers 6
-Type polycrystalline silicon layer 3 ′, insulating layer 16 of a silicon oxide film formed on polycrystalline silicon layer 3 and p-type polycrystalline silicon layer 3 ′, on strong electric field drift layer 6 and on insulating layer 16 Conductive thin film (for example, a gold thin film) that is formed in a stripe shape across the substrate and that crosses (intersects) the n-type region 8 at right angles.
And a surface electrode 7 made of the same. In this embodiment, the polycrystalline silicon layer 3 is formed on the side wall of the strong electric field drift layer 6.
Is formed, but it is not always necessary to provide the polycrystalline silicon layer 3.
A configuration in which only the shaped polycrystalline silicon layer 3 'is formed may be employed.

That is, in the present embodiment, since the p-type polycrystalline silicon layer 3 ′ is formed between the adjacent strong electric field drift layers 6, the p-type polycrystalline silicon layer 3 ′ and the n-type region 8 If a reverse bias voltage is applied in between, injection of electrons from n-type region 8 into p-type polycrystalline silicon layer 3 'can be prevented, and adjacent strong electric field drift layers 6 are electrically insulated. be able to. Therefore, current can be prevented from leaking to the strong electric field drift layer 6 on the n-type region 8 adjacent to the n-type region 8 to which the voltage has been applied. Sometimes, the n-type region 8
Current can flow only in the region where the electrode intersects with the surface electrode 7, and crosstalk can be reduced. further,
On p-type polycrystalline silicon layer 3 'and polycrystalline silicon layer 3
Since the insulating layer 16 is formed over the upper portion, crosstalk and leakage of current can be reduced more reliably.

The field emission type electron source 10 of this embodiment
Also, the n-type regions 8 and n
Since the matrix is composed of the surface electrodes 7 formed in a stripe shape orthogonal to the n-type region 8, the n-type region 8 to which a voltage is applied and the surface electrode 7 are appropriately selected.
Electrons are emitted only from a region of the surface electrode 7 to which the voltage is applied, which crosses the n-type region 8 to which the voltage is applied, so that electrons can be emitted from a desired region of the surface electrode 7. The contact to the n-type region 8 is shown in FIG.
Is formed by etching a part of the strong electric field drift layer 6 to expose a part of the surface of the n-type region 8, and is connected by the electric wire W.

Further, when the display device as shown in FIG. 9 is configured, it is not necessary to form the collector electrode 31 in a stripe shape as in the display device shown in FIG. Or several k
A circuit for switching a high voltage of V is not required, so that cost reduction and size reduction can be achieved.

In this embodiment, the strong electric field drift layer 6 is made of oxidized porous polycrystalline silicon, but the strong electric field drift layer 6 is made of porous polycrystalline silicon, It may be constituted by a porous polycrystalline semiconductor layer described above.

Hereinafter, the field emission type electron source 10 of this embodiment will be described.
Will be described with reference to FIGS. 12 (a) to 12 (d).

First, similarly to Embodiment 1, n-type regions 8 are striped by introducing a dopant such as phosphorus (P) into the main surface side of p-type silicon substrate 1 by a thermal diffusion technique or an ion implantation technique. Then, LP is formed on the main surface of the p-type silicon substrate 1 on which the n-type region 8 is formed.
A non-doped polycrystalline silicon layer 3 having a thickness of 1.5 μm is formed by a CVD method, and thereafter, a portion on the n-type region 8 is made porous by anodizing treatment, and then thermally oxidized by rapid thermal oxidation. The strong electric field drift layer 6 made of polycrystalline silicon is formed, and the structure shown in FIG.

Next, a photoresist layer is applied and formed, and is patterned so that the resist layer 12 consisting of a part of the photoresist layer remains on the strong electric field drift layer 6, thereby obtaining the structure shown in FIG. Can be Here, the resist layer 12 is formed in a stripe shape.

Next, using the resist layer 12 as a mask, ions (p-type impurities) such as boron (B) are implanted into the polycrystalline silicon layer 3 between the strong electric field drift layers 6 by an ion implantation technique. Shaped polycrystalline silicon layer 3 '
Is formed, and then the resist layer 12 is removed to obtain the structure shown in FIG. Here, a sidewall layer made of the polycrystalline silicon layer 3 remains on the sidewall of the strong electric field drift layer 6. In addition, when the resist layer 12 is used as a mask to form the resist layer 12 so that the sidewall layer made of the polycrystalline silicon layer 3 does not remain,
Only strong electric field drift layer 6 and p-type polycrystalline silicon layer 3 'are formed on p-type silicon substrate 1.

Next, after an insulating layer 16 made of a silicon oxide film having a thickness of 0.5 μm is formed by PCVD on the entire surface on the main surface side of the p-type silicon substrate 1, a strong electric field drift of the insulating layer 16 is formed. Etching away the portion on layer 6,
Then, on the strong electric field drift layer 6 and the insulating layer 16,
By forming a conductive thin film (gold thin film) by a vapor deposition method using a metal mask having a stripe-shaped opening pattern, a stripe-shaped surface electrode 7 made of a conductive thin film is formed, as shown in FIG. A field emission type electron source 10 having a structure is obtained. In addition, as a patterning method of the surface electrode 7, a photolithography technique and an etching technique may be used, or a photolithography technique and a lift-off method may be used.

Thus, according to the manufacturing method of the present embodiment, field emission electrons can emit electrons only from a desired region of the surface electrode 7 and can insulate between the adjacent strong electric field drift layers 6. A source 10 can be provided.
In addition, since the portion overlapping the n-type region 8 in the polycrystalline silicon layer 3 is made porous by using the n-type region 8 as the conductor layer as an electrode during the anodic oxidation process, the portion is made porous. In addition, the alignment between the strong electric field drift layer 6 and the n-type region 8 becomes easy, and the pattern of the strong electric field drift layer 6 can be made more precise.

(Embodiment 5) FIG. 13 is a perspective view showing a schematic configuration of a display device using the field emission type electron source 10 of the present embodiment. Is arranged. A collector electrode 31 is formed on a surface of the glass substrate 33 facing the field emission electron source 10. 32 is applied. Note that the same components as those in the first embodiment are denoted by the same reference numerals.

By the way, in the field emission type electron source 10 having the structure of the first embodiment shown in FIGS. May drift, and in this case, electrons are emitted from the surface electrode 7 above the n-type region 8 to which no voltage is applied, and this may cause crosstalk in the display device. Further, current may leak from the n-type region 8 serving as a conductor layer or the p-type silicon substrate 1 (in short, a conductive substrate) to the surface electrode 7 through the polycrystalline silicon layer 3.

The field emission type electron source 10 according to the present embodiment has a configuration for preventing such a problem from occurring. As shown in FIGS. 13 and 114, the field emission type electron source 10 of the present embodiment includes a conductive substrate 1 having an n-type region 8 as a conductive layer formed in a stripe shape on the main surface side.
A strong p-type silicon substrate 1 and an oxidized porous polycrystalline silicon formed on the n-type region 8 of the p-type silicon substrate 1 (that is, formed in stripes overlapping the n-type region 8). An insulating layer comprising an electric field drift layer 6, a polycrystalline silicon layer 3 formed on the side wall of the strong electric field drift layer 6, and a silicon oxide film formed on the p-type silicon substrate 1 between the adjacent strong electric field drift layers 6 13 and a surface electrode 7 formed of a conductive thin film (for example, a gold thin film) formed in a stripe shape on the strong electric field drift layer 6 and orthogonal (intersecting) to the n-type region 8. In addition, the surface electrode 7 is the insulating layer 1
3 and also on the polycrystalline silicon layer 3.

That is, in the present embodiment, since the insulating layer 13 is formed between the adjacent strong electric field drift layers 6,
Since the adjacent strong electric field drift layers 6 are electrically separated by the insulating layer 13 interposed therebetween, it is possible to prevent current from leaking to the adjacent strong electric field drift layers 6. Further, it is possible to prevent a current from flowing from the n-type region 8 serving as a conductor layer or the p-type silicon substrate 1 (in short, a conductive substrate) to the surface electrode 7.

In short, also in the field emission type electron source 10 of the present embodiment, the n-type region 8 formed in a stripe shape
And a surface electrode 7 formed in a stripe shape orthogonal to the n-type region 8, a matrix is formed. Therefore, by appropriately selecting the n-type region 8 to which a voltage is applied and the surface electrode 7, the voltage is applied. Electrons are emitted only from the region of the surface electrode 7 that intersects the n-type region 8 to which the voltage is applied, so that electrons can be emitted from a desired region of the surface electrode 7.

Further, when the display device as shown in FIG. 13 is constructed, it is not necessary to form the collector electrode 31 in a stripe shape as in the display device shown in FIG. A circuit for switching a high voltage of several to several kV is not required, so that cost reduction and size reduction can be achieved.

In the present embodiment, the strong electric field drift layer 6 is made of oxidized porous polycrystalline silicon. However, the strong electric field drift layer 6 is made of porous polycrystalline silicon, It may be constituted by a porous polycrystalline semiconductor layer described above.

Hereinafter, the field emission type electron source 10 of this embodiment will be described.
Will be described with reference to FIGS. 15A to 15F.

First, similarly to the first embodiment, the n-type region 8 is formed in a stripe shape by introducing a dopant such as phosphorus (P) into the main surface side of the p-type silicon substrate 1 by a thermal diffusion technique or an ion implantation technique. Formed on the main surface of the p-type silicon substrate 1 on which the n-type region 8 is formed.
A non-doped polycrystalline silicon layer 3 having a thickness of 1.5 μm is formed by a CVD method, and then a portion on the n-type region 8 (that is, a portion overlapping the n-type region 8) is made porous by anodizing treatment. Then, a strong electric field drift layer 6 made of porous polycrystalline silicon thermally oxidized by rapid thermal oxidation is formed, and the structure shown in FIG. 15A is obtained.

Next, a photoresist layer is applied and formed, and is patterned so that the resist layer 12 consisting of a part of the photoresist layer remains on the strong electric field drift layer 6, thereby obtaining the structure shown in FIG. Can be Here, the resist layer 12 is formed in a stripe shape.

Next, using the resist layer 12 as a mask, the polycrystalline silicon layer 3 between the strong electric field drift layers 6 is etched away by a reactive ion etching technique. In this embodiment, since the width of the resist layer 12 is larger than the width of the strong electric field drift layer 6, a part of the polycrystalline silicon layer 3 remains on the side wall of the strong electric field drift layer 6. Here, as a condition of the etching by the reactive ion etching technique, the flow rate of the O ₂ gas is set to 4 scc.
m, the flow rate of CHF ₃ gas is 16 sccm, and the degree of vacuum is 8.
3 Pa, discharge power of 100 W (discharge power density of 0.
3 W / cm ² ). Thereafter, the structure shown in FIG. 15C is obtained by removing the resist layer 12. The method of etching the polycrystalline silicon layer 3 is not limited to the reactive ion etching technique, but may employ, for example, an ion etching technique using argon gas or the like.

Next, an insulating layer 13 made of a silicon oxide film is formed by a method such as a plasma CVD method so as to cover the entire surface on the main surface side of the p-type silicon substrate 1, whereby FIG.
The structure shown in FIG. 5 (d) is obtained. Here, the film formation conditions of the silicon oxide film, the substrate temperature 225 ° C., SiH ₄
The gas flow rate was 50 sccm, and the N ₂ O gas flow rate was 875.
sccm, vacuum degree 133 Pa, discharge power 150 W
(The discharge power density was 0.05 W / cm ² ).

Next, the structure shown in FIG. 15E is obtained by etching away the insulating layer 13 on the strong electric field drift layer 6 and the polycrystalline silicon layer 3.

Next, on the main surface side of the p-type silicon substrate 1,
By forming the stripe-shaped surface electrode 7 made of a conductive thin film (gold thin film), the field emission electron source 10 having the structure shown in FIG. In the present embodiment, the insulating layer 13 on the polycrystalline silicon layer 3 is removed by etching. However, the insulating layer 13 on the polycrystalline silicon layer 3 may be left.

According to the manufacturing method of this embodiment, the field emission type electron source 10 can emit electrons only from a desired region of the surface electrode 7 and can insulate between adjacent strong electric field drift layers. Can be provided. In addition, since the portion overlapping the n-type region 8 in the polycrystalline silicon layer 3 is made porous by using the n-type region 8 as the conductor layer as an electrode during the anodic oxidation process, the portion is made porous. In addition, the alignment between the strong electric field drift layer 6 and the n-type region 8 becomes easy, and the pattern of the strong electric field drift layer 6 can be made more precise.

In the present embodiment, the strong electric field drift layer 6 is formed in a stripe shape overlapping the n-type region 8. However, as shown in FIG. The n-type region 8 may be provided between the n-type region 8 and the surface electrode 7 at a portion where the n-type region 8 and the surface electrode 7 serving as the conductive thin film overlap. By employing such a configuration, it is possible to electrically insulate between the adjacent strong electric field drift layers 6, and it is possible to further reduce crosstalk. Further, it is possible to prevent a leakage current from flowing from the n-type region 8 or the p-type silicon substrate 1 to the surface electrode 7.

The method for manufacturing the field emission electron source 10 having the structure shown in FIG. 16 is substantially the same as the method described with reference to FIG. 15 described above, and as shown in FIG. After the electric field drift layer 6 is formed, a part of each of the polycrystalline silicon layers 3 between the adjacent strong electric field drift layers 6 and a part of each of the strong electric field drift layers 6 between the regions where the surface electrodes 7 to be formed later are to be formed are etched. Removed, followed by
An insulating layer 13 made of a silicon oxide film is formed on the entire main surface of the p-type silicon substrate 1, and a portion of the insulating layer 13 that crosses the n-type region 8 and overlaps the strong electric field drift layer 6 is opened. What is necessary is just to form the surface electrode 7 patterned in a stripe shape over the strong electric field drift layer 6 and the insulating layer 13.

(Embodiment 6) The basic configuration of a field emission type electron source of this embodiment is substantially the same as that of Embodiment 1, and FIG.
As shown in (e), on the main surface side of the p-type silicon substrate 1, a strong electric field drift layer 6 This is characterized in that an insulating layer 9 having a smaller thickness than that of the first embodiment is formed, and a part of the polycrystalline silicon layer 3 between the adjacent strong electric field drift layers 6 is removed. Note that the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof will be omitted.

Thus, in the field emission type electron source 10 of the present embodiment, the insulating layer 9 having a smaller film thickness than the strong electric field drift layer 6 is provided between the adjacent strong electric field drift layers 6.
Since a part of the polycrystalline silicon layer 3 between the strong electric field drift layers 6 is removed, electrons are transferred from the n-type region 8 to the strong electric field drift layer 6 on the n-type region 8 adjacent to the n-type region 8. Crosstalk due to drift can be reduced. Further, it is possible to prevent a leakage current from flowing from the n-type region 8 or the p-type silicon substrate 1 to the surface electrode 7.

Although the strong electric field drift layer 6 is also made of oxidized porous polysilicon in this embodiment, porous polycrystalline silicon of which the strong electric field drift layer 6 is nitrided or other oxidized or nitrided It may be constituted by a porous polycrystalline semiconductor layer described above.

Hereinafter, the field emission type electron source 10 of this embodiment will be described.
Will be described with reference to FIGS. 17 and 18.

First, a mask for thermal diffusion or ion implantation is provided on the main surface of the p-type silicon substrate 1, and phosphorus (P) is deposited on the main surface side of the p-type silicon substrate 1 by a thermal diffusion technique or an ion implantation technique. 1), a striped n-type region 8 is formed, and by removing the mask, the n-type region 8 shown in FIG.
The structure shown in FIG. 7A is obtained.

Next, an insulating layer 9 made of a 0.5 μm-thick silicon oxide film is deposited by LPCVD on the entire surface of the main surface of the p-type silicon substrate 1 on which the n-type region 8 has been formed. A region substantially corresponding to region 8 (on n-type region 8)
17 is removed by etching using a photolithography technique and an etching technique.
The structure shown in (b) is obtained.

Next, a 1.5 μm-thick non-doped polycrystalline silicon layer 3 is formed on the entire surface of the main surface side of the p-type silicon substrate 1 by the LPCVD method.
The structure shown in (c) is obtained.

Next, a region other than a portion substantially corresponding to n-type region 8 in polycrystalline silicon layer 3 is removed by etching using a photolithography technique and a reactive ion etching technique, so that the structure shown in FIG. Is obtained. Here, the polycrystalline silicon layer 3 is formed in a stripe shape overlapping with the n-type region 8.
Since the width of the polycrystalline silicon layer 3 is larger than the width of the polycrystalline silicon layer 3, a part of the polycrystalline silicon layer 3 is formed over the insulating layer 9.

Next, a back electrode 2 made of an aluminum alloy having a thickness of 1 μm is formed on the back surface of the p-type silicon substrate 1 by a sputtering method, whereby the structure shown in FIG. 18B is obtained.

Next, a 55 wt% aqueous solution of hydrogen fluoride and ethanol were mixed at a ratio of 1: 1 and an electrolytic solution cooled to 0 ° C. was used. A platinum electrode (not shown) was used as a negative electrode, and a back electrode 2 was used as a positive electrode. By performing anodic oxidation at a constant current while irradiating the polycrystalline silicon layer 3 with light, a porous polycrystalline silicon layer 3 is formed at a portion on the n-type region 8 (a portion where the insulating layer 9 is opened). The crystalline silicon layer 5 is formed, and then the back electrode 2 is removed to obtain the structure shown in FIG. Here, in the present embodiment,
As a condition of the anodizing treatment, the current density was set to 20 mA / cm.
² Anodizing time was set to 15 seconds, and light irradiation was performed by a 500 W tungsten lamp during the anodizing treatment.

Next, the porous polycrystalline silicon layer 5 is thermally oxidized in a dry oxygen atmosphere by a rapid thermal oxidation (RTO) method using a lamp annealing apparatus, thereby being made of the thermally oxidized porous polycrystalline silicon. Strong electric field drift layer 6
Is formed, and the structure shown in FIG. 18D is obtained. At this time, silicon oxide is also formed on the surface of the polycrystalline silicon layer 3. Here, conditions for the rapid thermal oxidation were an oxidation temperature of 900 ° C. and an oxidation time of 1 hour.

Thereafter, a conductive thin film (gold thin film) is formed on the polycrystalline silicon layer 3, the strong electric field drift layer 6 and the insulating layer 9 by using a metal mask having a stripe-shaped opening pattern by an evaporation method. As a result, the stripe-shaped surface electrode 7 orthogonal to the strong electric field drift layer 6 is formed.
Is formed, and the field emission type electron source 10 having the structure shown in FIG.

According to the manufacturing method of the present embodiment, electrons can be emitted only from a desired region of the surface electrode 7 and the field emission type electron in which the adjacent strong electric field drift layer 6 is insulated. A source 10 can be provided.
Further, by performing the anodic oxidation process using the n-type region 8 as an electrode during the anodic oxidation process, the portion of the polycrystalline silicon layer 3 overlapping the n-type region 8 is made porous. Since current does not flow through the portion of the layer 3 formed on the insulating layer 9 and current flows only through the portion above the n-type region 8, only the portion above the n-type region 8 is made porous.
The alignment between the strong electric field drift layer 6 and the n-type region 8 is facilitated, and the pattern of the strong electric field drift layer 6 can be highly accurate. Furthermore, since the anodic oxidation treatment is performed using the n-type region 8 as an electrode during the anodic oxidation treatment through the back electrode 2 provided on the back surface of the p-type silicon substrate 1, the back electrode 2 is positive, and the platinum electrode as the counter electrode is By simply applying an electric field so as to be negative, the p-type silicon substrate 1 and the n-type region 8 become forward-biased and a current flows, so that there is no need to connect an electrode for each n-type region 8. Only the portion of the polycrystalline silicon layer 3 on the n-type region 8 can be easily made porous. Note that the present embodiment may be combined with the insulating layer 13 described in Embodiment 5.

(Embodiment 7) FIG. 19 is a perspective view showing a schematic structure of a display device using the field emission type electron source 10 of the present embodiment. Is arranged. A collector electrode 31 is formed on a surface of the glass substrate 33 facing the field emission electron source 10. 32 is applied. Note that the same components as those in the first embodiment are denoted by the same reference numerals.

By the way, in the field emission type electron source 10 of the configuration of the first embodiment shown in FIGS. 1 to 3, although it is slightly, it passes through the polysilicon layer 3 interposed between the adjacent strong electric field drift layers 6. Electrons may drift, and in this case, electrons are emitted from the surface electrode 7 above the n-type region 8 to which no voltage is applied, which may cause crosstalk in the display device. Also,
Current may leak from the n-type region 8 or the p-type silicon substrate 1 to the surface electrode 7 through the polycrystalline silicon layer 3.

The field emission type electron source 10 according to the present embodiment has a configuration for preventing occurrence of this kind of trouble. As shown in FIGS. 19 and 20, a field emission type electron source 10 according to the present embodiment is a p-type silicon substrate as a conductive substrate having an n-type region 8 as a conductor layer formed in a stripe shape on the main surface side. A strong electric field drift layer 6 made of oxidized porous polycrystalline silicon formed on the n-type region 8 of the p-type silicon substrate 1 (that is, formed in a stripe shape overlapping the n-type region 8); An insulating layer 15 made of silicon oxide formed between adjacent n-type regions 8, and a conductive layer formed in a stripe over the strong electric field drift layer 6 and the insulating layer 15 and orthogonal to (crossing) the n-type region 8. And a surface electrode 7 made of a conductive thin film (for example, a gold thin film).

That is, in the present embodiment, since the insulating layer 15 is interposed between the adjacent strong electric field drift layers 6, it is possible to prevent current from leaking to the adjacent strong electric field drift layers 6. Also, the n-type region 8 and the p-type silicon substrate 1
Leakage of current from the electrode to the surface electrode 7 can also be prevented.

In short, also in the field emission type electron source 10 of the present embodiment, the n-type regions 8 formed in a stripe shape
And a surface electrode 7 formed in a stripe shape orthogonal to the n-type region 8, a matrix is formed. Therefore, by appropriately selecting the n-type region 8 to which a voltage is applied and the surface electrode 7, the voltage is applied. Electrons are emitted only from the region of the surface electrode 7 that intersects the n-type region 8 to which the voltage is applied, so that electrons can be emitted from a desired region of the surface electrode 7.

Further, when the display device as shown in FIG. 19 is constructed, it is not necessary to form the collector electrode 31 in a stripe shape as in the display device shown in FIG. A circuit for switching a high voltage of several to several kV is not required, and cost reduction and size reduction can be achieved.

In this embodiment, the strong electric field drift layer 6 is made of oxidized porous polycrystalline silicon. However, the strong electric field drift layer 6 is made of porous polycrystalline silicon, or other oxidized or nitrided polycrystalline silicon. It may be constituted by a porous polycrystalline semiconductor layer described above.

Hereinafter, the field emission type electron source 10 of this embodiment will be described.
Will be described with reference to FIGS. 21 and 22.

First, after a silicon nitride film 14 is formed on the main surface of the p-type silicon substrate 1 by a plasma CVD method, the silicon nitride film 14 is patterned into stripes by using a photolithography technique and an etching technique. The structure shown in FIG. 21A is obtained.
Here, the conditions for forming the silicon nitride film 14 include a substrate temperature of 300 ° C. and a flow rate of SiH ₄ gas of 30 seconds.
The flow rate of ccm, N ₂ gas was 450 sccm, the flow rate of NH ₃ gas was 30 sccm, the degree of vacuum was 67 Pa, and the discharge power was 500 W (discharge power density was 0.17 W / cm ² ).

Next, the striped silicon nitride film 14 is formed.
Is formed by wet oxidation of the p-type silicon substrate 1 in which water is formed in water vapor to selectively oxidize only the portion of the main surface of the p-type silicon substrate 1 which is not covered with the silicon nitride film 14. The structure shown in FIG. 21B is obtained by forming the insulating layer 15.

Next, the structure shown in FIG. 21C is obtained by removing the silicon nitride film 14 by etching.

Thereafter, phosphorus (P) or the like is ion-implanted using the insulating layer 15 as a mask, thereby forming a stripe-shaped n-type region 8 on the main surface side in the p-type silicon substrate 1 and FIG. The structure shown in FIG.

Subsequently, a polycrystalline silicon layer 3 is formed on the n-type region 8 and the insulating layer 15 by LPCVD to obtain the structure shown in FIG. However, in the polycrystalline silicon layer 3, the film formed on the n-type region 8 is polycrystalline silicon, but the film formed on the insulating layer 15 is amorphous silicon.

Next, the structure shown in FIG. 22A is obtained by etching away only the amorphous silicon on the insulating layer 15.

Thereafter, a 55 wt% aqueous solution of hydrogen fluoride and ethanol were mixed at a ratio of 1: 1 and an electrolytic solution cooled to 0 ° C. was used. A platinum electrode (not shown) was used as a negative electrode, and a p-type silicon substrate 1 (p-type) was used. An ohmic electrode (not shown) is formed on the back surface of the silicon substrate 1), and the polycrystalline silicon layer 3 is made porous by performing anodic oxidation with a constant current while irradiating light. Polycrystalline silicon layer 5 is formed, and the structure shown in FIG. The insulating layer 15 is also etched by the electrolytic solution during the anodizing treatment. The etching rate of the insulating layer 15 by the electrolytic solution is about 0.14 μm per minute, while the anodic oxidation time is 10 seconds to 30 seconds. Therefore, if the thickness of the insulating layer 15 is set to about 0.5 μm, the function as a mask is surely achieved.

Next, the porous polycrystalline silicon layer 5 is thermally oxidized in a dry oxygen atmosphere by a rapid thermal oxidation (RTO) method using a lamp annealing apparatus, so that the porous polycrystalline silicon layer 5 is made of a thermally oxidized porous polycrystalline silicon. The electric field drift layer 6 is formed, and the structure shown in FIG. Here, the conditions of rapid thermal oxidation are as follows:
C. and the oxidation time was 1 hour.

Thereafter, a stripe-shaped surface electrode 7 orthogonal to the n-type region 8 is formed on the main surface side of the p-type silicon substrate 1 so that the field emission electron source 10 having the structure shown in FIG. Is obtained.

According to the manufacturing method of the present embodiment, electrons can be emitted only from a desired region of the surface electrode 7 and the field emission type electron in which the adjacent strong electric field drift layers 6 are insulated. A source 10 can be provided.
Further, current leakage between the surface electrode 7 and the conductive substrate through the polycrystalline silicon layer 3 other than the strong electric field drift portion 6 can be prevented. Further, since the polycrystalline silicon layer 3 is made porous by performing anodic oxidation using the n-type region 8 as an electrode during anodic oxidation, the position between the strong electric field drift layer 6 and the n-type region 8 is reduced. The alignment is facilitated, and the pattern of the strong electric field drift layer 6 can be made more precise.

(Embodiment 8) The field emission type electron source 10 of this embodiment has the structure shown in FIG. 23 (d), and the basic configuration is substantially the same as that of the embodiment 7; The description is omitted here.

Hereinafter, the field emission type electron source 10 of this embodiment will be described.
The manufacturing method of the seventh embodiment will be described.
Therefore, description will be made with reference to FIGS. 21 and 23.

First, after a silicon nitride film 14 is formed on the main surface of the p-type silicon substrate 1 by a plasma CVD method, the silicon nitride film 14 is patterned into stripes by using a photolithography technique and an etching technique. The structure shown in FIG. 21A is obtained.
Here, the conditions for forming the silicon nitride film 14 include a substrate temperature of 300 ° C. and a flow rate of SiH ₄ gas of 30 seconds.
The flow rate of ccm, N ₂ gas was 450 sccm, the flow rate of NH ₃ gas was 30 sccm, the degree of vacuum was 67 Pa, and the discharge power was 500 W (discharge power density was 0.17 W / cm ² ).

Next, the striped silicon nitride film 14 is formed.
Is formed by wet oxidation of the p-type silicon substrate 1 in which water is formed in water vapor to selectively oxidize only the portion of the main surface of the p-type silicon substrate 1 which is not covered with the silicon nitride film 14. The structure shown in FIG. 21B is obtained by forming the insulating layer 15.

Next, the structure shown in FIG. 21C is obtained by removing the silicon nitride film 14 by etching.

Thereafter, phosphorus (P) or the like is ion-implanted using the insulating layer 15 as a mask, thereby forming a stripe-shaped n-type region 8 on the main surface side in the p-type silicon substrate 1 and FIG. The structure shown in FIG.

Subsequently, a polycrystalline silicon layer 3 is formed on the n-type region 8 and the insulating layer 15 by LPCVD to obtain the structure shown in FIG. However, in the polycrystalline silicon layer 3, the film formed on the n-type region 8 is polycrystalline silicon, but the film formed on the silicon oxide layer 15 is amorphous silicon.

Next, a platinum electrode (not shown) was used as a negative electrode, and a back electrode (p-type silicon substrate) was used using an electrolytic solution obtained by mixing a 55 wt% aqueous solution of hydrogen fluoride and ethanol at a ratio of 1: 1 and cooling to 0 ° C. 1 is provided with a back electrode (not shown) as a positive electrode, and anodizing is performed at a constant current while irradiating the polycrystalline silicon layer 3 with light.
23. Porous polycrystalline silicon layer 5 is formed on shaped region 8 and then the back electrode is removed, as shown in FIG.
The structure shown in (a) is obtained. Here, in the present embodiment, the current density is 20 m
A / cm ^{2 was} constant, the anodic oxidation time was 15 seconds, and light irradiation was performed by a 500 W tungsten lamp during the anodic oxidation treatment.

Next, the porous polycrystalline silicon layer 5 is thermally oxidized in a dry oxygen atmosphere by a rapid thermal oxidation (RTO) method using a lamp annealing apparatus, thereby being made of the thermally oxidized porous polycrystalline silicon. Strong electric field drift layer 6
Is formed, and the structure shown in FIG. Here, the conditions of the rapid thermal oxidation are as follows:
At 0 ° C., the oxidation time was 1 hour.

Next, the polycrystalline silicon layer 3 on the insulating layer 15
By removing (amorphous silicon) by etching, the structure shown in FIG. 23C is obtained.

Next, a conductive thin film (gold thin film) is formed on the insulating layer 15 and the strong electric field drift layer 6 using a metal mask having a stripe-shaped opening pattern by a vapor deposition method. The stripe-shaped surface electrode 7 orthogonal to the layer 6 is formed, and the field emission electron source 10 having the structure shown in FIG.

According to the manufacturing method of the present embodiment, electrons can be emitted only from a desired region of the surface electrode 7 and the field emission type electrons in which the adjacent strong electric field drift layers 6 are insulated. A source 10 can be provided.
Further, current leakage between the surface electrode 7 and the conductive substrate through the polycrystalline silicon layer 3 other than the strong electric field drift portion 6 can be prevented. Further, since the polycrystalline silicon layer 3 is made porous by performing anodic oxidation using the n-type region 8 as an electrode during anodic oxidation, the position between the strong electric field drift layer 6 and the n-type region 8 is reduced. The alignment is facilitated, and the pattern of the strong electric field drift layer 6 can be made more precise.

[0156]

According to the first aspect of the present invention, there is provided a strong electric field drift layer comprising a conductive substrate, an oxidized or nitrided porous polycrystalline semiconductor layer formed on one surface side of the conductive substrate, and a strong electric field drift layer. A conductive thin film formed on the conductive thin film, and by applying a voltage with the conductive thin film as a positive electrode to the conductive substrate, electrons injected from the conductive substrate drift in the strong electric field drift layer and the conductive thin film A conductive substrate having a conductive layer formed in a stripe shape on the one surface side, and a strong electric field drift layer formed in a stripe shape overlapping the conductive layer. And
The conductive thin film is formed in a stripe shape in a direction intersecting the strong electric field drift layer, and the conductive thin film to which the voltage is applied is selected by appropriately selecting the conductive layer to which the voltage is applied and the conductive thin film. Of these, electrons are emitted only from a region that intersects the conductor layer to which a voltage is applied, so that electrons can be emitted from a desired region of the conductive thin film, and the collector electrode faces the conductive thin film. In the case where the display device is configured by disposing, a circuit for switching a high voltage of several hundred V to several kV applied to the collector electrode becomes unnecessary, and the effect of reducing cost and size can be achieved. is there.

According to a second aspect of the present invention, in the first aspect, a polycrystalline semiconductor layer is formed on one surface side of the conductive substrate so as to bury the adjacent strong electric field drift layers, and the conductive thin film is formed. Is formed over the strong electric field drift layer and the polycrystalline semiconductor layer, so that disconnection of the conductive thin film can be prevented, reliability is improved, and the thickness of the conductive thin film is reduced. There is an effect that can be.

According to a fifth aspect of the present invention, in the first or second aspect, the conductive substrate comprises at least an insulating substrate and a diffusion layer formed on one surface of the insulating substrate. Since it is composed of a body layer, the use of an insulating substrate such as glass makes it possible to increase the area and reduce the cost as compared with a case where a semiconductor substrate such as a single crystal silicon substrate is used as a conductive substrate. This has the effect.

According to a sixth aspect of the present invention, in the fifth aspect of the present invention, the conductive substrate includes a semiconductor layer formed on the one surface of the insulating substrate so as to bury the adjacent conductive layers. Disconnection of the conductive thin film can be prevented, reliability is improved, and the thickness of the conductive thin film can be reduced.

According to a seventh aspect of the present invention, in the sixth aspect of the present invention, the conductivity type of the semiconductor layer is p-type and the conductivity type of the conductor layer is n-type. There is an effect that it can be insulated.

According to an eighth aspect of the present invention, in the second aspect of the present invention, the polycrystalline semiconductor layer and the conductor layer are formed of semiconductors of different conductivity types, and an insulating layer is provided on the polycrystalline semiconductor layer. Therefore, there is an effect that it is possible to electrically insulate between adjacent conductor layers and to prevent a current from flowing from the conductive substrate to the conductive thin film through the polycrystalline semiconductor layer.

According to an eleventh aspect of the present invention, in the eighth aspect of the present invention, the conductive substrate comprises at least an insulating substrate and the conductive layer formed of a diffusion layer formed on one surface of the insulating substrate. Since an insulating substrate such as glass is used, there is an effect that a larger area and a lower cost can be achieved as compared with a case where a semiconductor substrate such as a single crystal silicon substrate is used as a conductive substrate. .

According to a twelfth aspect of the present invention, in accordance with the first aspect of the present invention, the insulating layer interposed between the adjacent strong electric field drift layers on the one surface side of the conductive substrate is provided. Can be electrically insulated from each other, and the current can be prevented from flowing from the conductive substrate to the conductive thin film through the polycrystalline semiconductor layer.

According to a fourteenth aspect of the present invention, there is provided a conductive substrate, a strong electric field drift layer formed of an oxidized or nitrided porous polycrystalline semiconductor layer formed on one surface side of the conductive substrate, and Electrons injected from the conductive substrate drift through the strong electric field drift layer and are emitted through the conductive thin film by applying a voltage with the conductive thin film as the positive electrode to the conductive substrate. In the field emission type electron source, the conductive substrate has a conductive layer formed in a stripe shape on the one surface side, and the conductive thin film is formed in a stripe shape in a direction crossing the conductive layer. ,
The strong electric field drift layer is provided between the conductive layer and the conductive thin film at a portion where the conductive layer and the conductive thin film overlap with each other. By selecting, from the conductive thin film to which a voltage is applied, electrons are emitted only from a region intersecting the conductor layer to which the voltage is applied, so that electrons are emitted from a desired region of the conductive thin film. The strong electric field drift layer is provided between the conductive layer and the conductive thin film at a portion where the conductive layer and the conductive thin film overlap, thereby electrically insulating the adjacent strong electric field drift layers. In addition, a circuit for switching a high voltage of several hundred V to several kV applied to the collector electrode when a display device is configured by arranging the collector electrode opposite to the conductive thin film becomes unnecessary, Low There is an effect that it is possible to bets and miniaturization.

According to a fifteenth aspect, in the fourteenth aspect, an insulating layer is provided on a region where the strong electric field drift layer is not formed on the one surface side of the conductive substrate. There is an effect that it is possible to more reliably insulate between the strong electric field drift layers and to prevent a current from flowing from the conductive substrate to the conductive thin film through the polycrystalline semiconductor layer.

According to a sixteenth aspect of the present invention, there is provided the method for manufacturing a field emission type electron source according to the second aspect, wherein a polycrystalline semiconductor layer is formed on a conductive substrate so as to cover the conductive layer, and then the conductive material is formed. By performing anodic oxidation treatment using the layer as an electrode at the time of anodic oxidation treatment, a portion of the polycrystalline semiconductor layer overlapping the conductor layer is made porous, and the porous polycrystalline semiconductor layer is oxidized or nitrided. Thus, a strong electric field drift layer is formed, and thereafter, a conductive thin film that intersects the strong electric field drift layer is formed on the strong electric field drift layer, so that electrons can be emitted only from a desired region of the conductive thin film. A field emission type electron source can be provided, and a portion of the polycrystalline semiconductor layer that overlaps with the conductor layer is made porous by performing anodic oxidation using the conductor layer as an electrode during anodic oxidation. Qualify Since that intensity with the alignment between the electric field drift layer and the conductor layer is facilitated, there is effect that it is possible to highly accurate patterns of strong electric field drift layer.

According to a seventeenth aspect of the present invention, there is provided a method of manufacturing a field emission type electron source according to the second or twelfth aspect, wherein an insulating layer is formed on a conductive substrate provided with the conductor layer on one surface side. After forming, a predetermined region on the conductor layer in the insulating layer is opened, a polycrystalline semiconductor layer is formed on the entire surface on the one surface side of the conductive substrate, and then the conductor layer is subjected to an anodic oxidation process. By performing anodic oxidation using the electrode as an electrode, a portion of the polycrystalline semiconductor layer corresponding to the opening pattern of the insulating layer is made porous, and the porous polycrystalline semiconductor layer is oxidized or nitrided to cause a strong electric field drift. A field emission type electron source capable of emitting electrons only from a desired region of the conductive thin film because a conductive thin film is formed on the strong electric field drift layer by forming a layer on the strong electric field drift layer. It is possible, In addition, the portion of the polycrystalline semiconductor layer overlapping the conductor layer is made porous by performing anodic oxidation using the conductor layer as an electrode during the anodic oxidation process. Current does not flow in the portion formed on the insulating layer, current flows only in the portion on the conductor, and only the portion on the conductor layer is made porous, and the alignment between the strong electric field drift layer and the conductor layer is performed. Becomes easier,
There is an effect that the pattern of the strong electric field drift layer can be made highly accurate, and an insulating layer for insulation between the strong electric field drift layers can be easily provided.

According to an eighteenth aspect of the present invention, there is provided the method of manufacturing a field emission type electron source according to the second or twelfth aspect, wherein the method is provided on one surface side of the semiconductor substrate or on the entire surface of one surface of the insulating substrate. Forming an insulating layer having a predetermined opening pattern on the main surface side of the semiconductor layer; forming a conductive layer by selectively introducing impurities using the insulating layer as a mask to form a conductive substrate; An opening pattern of an insulating layer in the polycrystalline semiconductor layer is formed by forming a polycrystalline semiconductor layer on the entire surface on the one surface side of the substrate and thereafter performing anodic oxidation using the conductor layer as an electrode during anodic oxidation. Is formed by oxidizing or nitriding the porous polycrystalline semiconductor layer to form a strong electric field drift layer, and forming a conductive thin film patterned into a predetermined shape on the strong electric field drift layer. Therefore, the pattern of the conductor layer can be highly accurate, and the current does not flow to the portion of the polycrystalline semiconductor layer formed on the insulating layer but flows only to the portion on the conductor layer. Only the portion on the conductor layer is made porous, so that the alignment between the strong electric field drift layer and the conductor layer is facilitated, and the pattern of the strong electric field drift layer can be highly accurate.

According to a nineteenth aspect of the present invention, there is provided the method for manufacturing a field emission type electron source according to the fourth aspect, wherein an n-type impurity is introduced into a predetermined region on the main surface side of the p-type semiconductor substrate to thereby form a conductive layer. Is formed, a polycrystalline semiconductor layer is formed on the p-type semiconductor substrate, and the conductive layer is used as an electrode during the anodizing process to perform anodizing, thereby overlapping the conductive layer of the polycrystalline semiconductor layer. The porous portion is made porous, and the porous polycrystalline semiconductor layer is oxidized or nitrided to form a strong electric field drift layer, and a conductive thin film patterned into a predetermined shape is formed on the strong electric field drift layer. So
A field emission type electron source capable of emitting electrons only from a desired region of a conductive thin film can be provided, and anodizing treatment is performed by using a conductive layer as an electrode during anodizing treatment. As a result, the portion of the polycrystalline semiconductor layer that overlaps the conductor layer is made porous, so that an electric field is applied so that the conductor layer becomes positive and the opposing electrode becomes negative during the anodizing treatment, so that the p-type Since the semiconductor substrate and the conductor layer are reverse-biased, current can be prevented from flowing toward the p-type silicon substrate, and current flows only through the polycrystalline semiconductor layer on the conductor layer. And the conductor layer are easily aligned,
There is an effect that the pattern of the strong electric field drift layer can be highly accurate.

According to a twentieth aspect of the present invention, there is provided the method for manufacturing a field emission type electron source according to the seventh aspect, wherein the conductive layer is formed by introducing an n-type impurity into a predetermined region of the p-type semiconductor layer. Forming a polycrystalline semiconductor layer on the p-type semiconductor layer on which the conductor layer has been formed, and performing anodic oxidation using the conductor layer as an electrode during anodic oxidation; A conductive thin film patterned into a predetermined shape on the strong electric field drift layer by forming a strong electric field drift layer by oxidizing or nitrifying the porous polycrystalline semiconductor layer; Is formed, it is possible to provide a field emission type electron source capable of emitting electrons only from a desired region of the conductive thin film, and to use the conductor layer as an electrode during anodization. Anodizing treatment Thus, the portion of the polycrystalline semiconductor layer that overlaps with the conductor layer is made porous. By applying an electric field so that the conductor layer becomes positive and the counter electrode becomes negative during anodization, p Current is prevented from flowing to the p-type semiconductor layer side because the semiconductor layer and the conductor layer are reverse biased, and current flows only to the polycrystalline semiconductor layer on the conductor layer. The alignment between the layer and the conductor layer becomes easy,
There is an effect that the pattern of the strong electric field drift layer can be highly accurate.

According to a twenty-first aspect of the present invention, there is provided a method for manufacturing a field emission type electron source according to the fourth or twelfth aspect, wherein
Forming an electric conductor layer by introducing an n-type impurity into a predetermined region on the main surface side of the p-type semiconductor substrate; forming an insulating layer on the main surface of the p-type semiconductor substrate; , A polycrystalline semiconductor layer is formed on the entire surface on the main surface side of the p-type semiconductor substrate, a back electrode is formed on the back surface of the p-type semiconductor substrate, and then a conductor layer is formed through the back electrode. Is used as an electrode during the anodizing treatment to perform anodic oxidation treatment, thereby making the portion of the polycrystalline semiconductor layer corresponding to the opening pattern of the insulating layer porous, and oxidizing or nitriding the porous polycrystalline semiconductor layer. Forming a strong electric field drift layer, and then forming a conductive thin film patterned in a predetermined shape on the strong electric field drift layer, so that electrons can be emitted only from a desired region of the conductive thin film. A field emission type electron source can be provided, and a portion of the polycrystalline semiconductor layer that overlaps with the conductor layer is made porous by performing anodic oxidation using the conductor layer as an electrode during anodic oxidation. Quality,
In the polycrystalline semiconductor layer, current does not flow in the portion formed on the insulating layer, and current flows only in the portion on the conductor layer, and only the portion on the conductor layer is made porous, and the strong electric field drift layer and There is an effect that the alignment with the conductor layer becomes easy and the pattern of the strong electric field drift layer can be made more precise. Furthermore, since anodization is performed using the n-type conductor layer as an electrode during the anodization through the back electrode of the p-type semiconductor substrate, an electric field is applied so that the back electrode is positive and the counter electrode is negative. In this case, the p-type semiconductor substrate and the conductor layer are forward-biased and a current flows, so that there is no need to connect an electrode for each conductor layer, and the portion of the polycrystalline semiconductor layer on the conductor layer There is an effect that only the material can be easily made porous.

According to a twenty-second aspect of the present invention, there is provided a method for manufacturing a field emission type electron source according to the fourth aspect, wherein an n-type impurity is introduced into a predetermined region on a main surface side of a p-type semiconductor substrate to form a conductive layer. After forming, a polycrystalline semiconductor layer is formed on the main surface of the p-type semiconductor substrate, a mask layer is formed on the polycrystalline semiconductor layer, a predetermined region of the mask layer on the conductor layer is opened,
Thereafter, a back electrode is formed on the back surface of the p-type semiconductor substrate, and then anodization is performed using the conductor layer as an electrode during the anodic oxidation process through the back electrode, thereby opening the mask layer of the polycrystalline semiconductor layer. After the portion corresponding to the pattern is made porous and the mask layer is removed, the porous polycrystalline semiconductor layer is oxidized or nitrided to form a strong electric field drift layer, which is patterned into the strong electric field drift layer in a predetermined shape. Since the conductive thin film is formed, it is possible to provide a field emission type electron source capable of emitting electrons only from a desired region of the conductive thin film. Since the portion of the polycrystalline semiconductor layer that overlaps the conductor layer is made porous by performing anodization using the electrode, the position of the strong electric field drift layer and the conductor layer is changed. Align with is facilitated, there is effect that it is possible to highly accurate patterns of strong electric field drift layer. Furthermore, since the anodic oxidation treatment is performed using the conductor layer as an electrode during the anodic oxidation treatment through the back electrode of the p-type semiconductor substrate, it is only necessary to apply an electric field so that the back electrode is positive and the counter electrode is negative. Since the p-type semiconductor substrate and the conductor layer become forward-biased and current flows only in a portion of the polycrystalline semiconductor layer corresponding to the opening pattern of the mask layer, it is necessary to connect an electrode for each conductor layer. Instead, only the portion of the polycrystalline semiconductor layer on the conductor layer can be easily made porous.

According to a twenty-third aspect of the present invention, there is provided the method for manufacturing a field emission type electron source according to the eighth aspect, wherein a conductive material is provided on a conductive substrate provided with the conductive layer made of a diffusion layer on the one surface side. After the polycrystalline semiconductor layer is formed so as to cover the layer, the conductive layer is used as an electrode during the anodizing process, and anodizing treatment is performed so that the portion of the polycrystalline semiconductor layer overlapping the conductive layer is porous. Forming a strong electric field drift layer by oxidizing or nitriding the porous polycrystalline semiconductor layer, and then introducing impurities into each of the adjacent polycrystalline semiconductor layers of the strong electric field drift layer. The conductivity type of the layer is made different from the conductivity type of the conductor layer, then an insulating layer is formed on each of the adjacent polycrystalline semiconductor layers of the strong electric field drift layer, and further formed on the strong electric field drift layer and the insulating layer. Since a conductive thin film patterned into a shape is formed, electrons can be emitted only from a desired region of the conductive thin film, and an adjacent strong electric field drift layer can be insulated. It is possible to provide a field emission type electron source capable of preventing a current from flowing to the conductive thin film, and to perform anodic oxidation by using the conductor layer as an electrode during anodic oxidation to form a polycrystalline semiconductor layer. Because the portion overlapping the conductor layer is made porous, the alignment between the strong electric field drift layer and the conductor layer becomes easy, and the pattern of the strong electric field drift layer can be made more precise. effective.

According to a twenty-fourth aspect of the present invention, there is provided a method of manufacturing a field emission type electron source according to the tenth aspect, wherein an n-type impurity is introduced into a predetermined region on a main surface side of a p-type semiconductor substrate to form a conductive layer. Is formed, a polycrystalline semiconductor layer is formed on the main surface of the p-type semiconductor substrate, and the conductive layer is used as an electrode during the anodic oxidation process to perform anodizing, thereby forming a conductive material in the polycrystalline semiconductor layer. The portion overlapping the layers is made porous, and the porous polycrystalline semiconductor layer is oxidized or nitrided to form a strong electric field drift layer. Forming a p-type polycrystalline semiconductor layer by introducing a p-type impurity, then forming an insulating layer on the p-type polycrystalline semiconductor layer,
Further, since the conductive thin film patterned in a predetermined shape is formed on the strong electric field drift layer and the insulating layer, electrons can be emitted only from a desired region of the conductive thin film, and the adjacent strong electric field drift layer can be emitted. A field emission type electron source capable of preventing current from flowing from the conductive substrate to the conductive thin film through the polycrystalline semiconductor layer, and using the conductive layer as an electrode during anodizing. Since the portion of the polycrystalline semiconductor layer overlapping the conductor layer is made porous by performing anodizing treatment,
The alignment between the strong electric field drift layer and the conductor layer is facilitated, and the pattern of the strong electric field drift layer can be highly accurate.

According to a twenty-fifth aspect of the present invention, there is provided the method for manufacturing a field emission type electron source according to the twelfth aspect, the fourteenth aspect or the fifteenth aspect, wherein a conductive layer is provided on the one surface side. After the insulating layer is formed, a predetermined region on the conductor layer in the insulating layer is opened, and a polycrystalline semiconductor layer is formed on the entire surface on the one surface side of the conductive substrate. At least a portion of each of the portions between the conductor layers is etched away, and the anodic oxidation process is performed using the conductor layer as an electrode during the anodic oxidation process, whereby a portion of the polycrystalline semiconductor layer corresponding to the opening pattern of the insulating layer. Is formed, and the porous polycrystalline semiconductor layer is oxidized or nitrided to form a strong electric field drift layer, which is patterned into a predetermined shape over the strong electric field drift layer and the conductive substrate. Since a thin film is formed, electrons can be emitted only from a desired region of the conductive thin film, and an adjacent electric field drift layer can be insulated, and current flows from the conductive substrate to the conductive thin film through the polycrystalline semiconductor layer. It is possible to provide a field emission type electron source that can prevent the occurrence of an anodization process using the conductor layer as an electrode during the anodization process, thereby overlapping the conductor layer of the polycrystalline semiconductor layer. Since the portion is made porous, there is an effect that the alignment between the strong electric field drift layer and the conductor layer becomes easy, and the pattern of the strong electric field drift layer can be made more precise.

According to a twenty-sixth aspect of the present invention, in the twenty-fifth aspect of the present invention, the conductive layer selectively deposits impurities on a semiconductor layer provided on one surface of the insulating substrate or a predetermined portion on the one surface side of the semiconductor substrate. In this case, there is an effect that it is possible to increase the precision of the pattern of the conductor layer.

According to a twenty-eighth aspect of the present invention, there is provided the method of manufacturing a field emission type electron source according to the twelfth aspect, wherein the semiconductor layer is provided on one surface of the insulating substrate or the main surface of the semiconductor substrate is insulated. A conductive substrate is formed by forming a layer, opening a part of the insulating layer to form a conductive layer, introducing impurities using the insulating layer as a mask to form a conductive layer including a diffusion layer. Forming a polycrystalline semiconductor layer over the main surface of the conductive substrate so as to cover the conductive layer, and thereafter, etching away at least a part of each part of the conductive layer in the polycrystalline semiconductor layer; The body layer is used as an electrode during the anodic oxidation treatment to perform anodic oxidation treatment, thereby making the portion of the polycrystalline semiconductor layer corresponding to the opening pattern of the insulating layer porous, and oxidizing the porous polycrystalline semiconductor layer. Or nitriding Forming a stronger electric field drift layer and forming a conductive thin film patterned in a predetermined shape over the strong electric field drift layer and the conductive substrate, so that electrons are emitted only from a desired region of the conductive thin film. And a field emission electron source capable of preventing current from flowing from the conductive substrate to the conductive thin film through the polycrystalline semiconductor layer in which the adjacent electric field drift layers are insulated. Since the portion of the polycrystalline semiconductor layer that overlaps the conductor layer is made porous by using it as an electrode during the anodization process, the alignment between the strong electric field drift layer and the conductor layer is performed. And the pattern of the strong electric field drift layer can be highly accurate.

According to a thirtieth aspect of the present invention, there is provided the method for manufacturing a field emission type electron source according to the twelfth aspect, the fourteenth aspect, or the fifteenth aspect, wherein a conductive layer is provided on the one surface side. After forming an insulating layer on the conductive layer of the insulating layer, a predetermined region on the conductive layer is opened, and a polycrystalline semiconductor layer is formed on the entire surface on the one surface side of the conductive substrate. By performing anodic oxidation treatment by using as an electrode at the time of treatment, a portion of the polycrystalline semiconductor layer corresponding to the opening pattern of the insulating layer is made porous, and the porous polycrystalline semiconductor layer is oxidized or nitrided. After forming a strong electric field drift layer, a part of the polycrystalline semiconductor layer between the strong electric field drift layers was removed by etching, and then patterned into a predetermined shape over the strong electric field drift layer and the conductive substrate. Since an electroconductive thin film is formed, electrons can be emitted only from a desired region of the electroconductive thin film, and an adjacent electric field drift layer can be insulated, and a current flows from the electroconductive substrate to the electroconductive thin film through the polycrystalline semiconductor layer. It is possible to provide a field emission type electron source capable of preventing flow, and to perform anodic oxidation treatment using the conductor layer as an electrode during anodic oxidation treatment so that the conductor layer of the polycrystalline semiconductor layer can be formed. Since the overlapping portion is made porous, there is an effect that the alignment between the strong electric field drift layer and the conductor layer becomes easy, and the pattern of the strong electric field drift layer can be made more precise.

According to a thirty-first aspect of the present invention, there is provided the method for manufacturing a field emission type electron source according to the twelfth aspect, the fourteenth aspect or the fifteenth aspect, wherein the semiconductor substrate is provided with a semiconductor layer on one surface of an insulating substrate. Forming an insulating layer on the main surface of the semiconductor substrate, opening a part of the insulating layer to form a conductor layer,
A conductive substrate is formed by forming a conductive layer composed of a diffusion layer by introducing impurities using the insulating layer as a mask, and then forming a polycrystalline semiconductor layer on the main surface of the conductive substrate so as to cover the conductive layer. Is formed, and then the portion corresponding to the opening pattern of the insulating layer in the polycrystalline semiconductor layer is made porous by performing anodic oxidation using the conductor layer as an electrode at the time of anodic oxidation. A strong electric field drift layer is formed by oxidizing or nitriding the polycrystalline semiconductor layer thus formed, and then a part of each polycrystalline semiconductor layer between the strong electric field drift layers is removed by etching. Since a conductive thin film patterned into a predetermined shape is formed over the substrate, electrons can be emitted only from a desired region of the conductive thin film, and an adjacent electric field drift layer To provide a field emission type electron source that can insulate and prevent a current from flowing from a conductive substrate to a conductive thin film through a polycrystalline semiconductor layer, and use the conductive layer as an electrode during anodizing. By performing the anodic oxidation treatment, the portion of the polycrystalline semiconductor layer overlapping the conductor layer is made porous, so that the alignment between the strong electric field drift layer and the conductor layer becomes easy, and the strong electric field There is an effect that the pattern of the drift layer can be made more precise.

According to a thirty-second aspect of the present invention, there is provided the method for manufacturing a field emission type electron source according to the fourteenth aspect, wherein a polycrystalline semiconductor layer is formed on a conductive substrate so as to cover the conductive layer. By performing anodic oxidation treatment using the layer as an electrode at the time of anodizing treatment, a portion of the polycrystalline semiconductor layer overlapping with the conductor layer is made porous, and the porous polycrystalline semiconductor layer is oxidized or nitrided. Forming a strong electric field drift layer, and then removing a part of each polycrystalline semiconductor layer between adjacent strong electric field drift layers and a part of each strong electric field drift layer between regions where a conductive thin film to be formed later is to be formed. Etching is removed, and then a conductive thin film patterned in a predetermined shape is formed over the strong electric field drift layer and the polycrystalline semiconductor layer and the conductive substrate. A field emission type electron source capable of emitting electrons only from the region and insulating between adjacent electric field drift layers, and utilizing the conductive layer as an electrode during anodizing to form an anode. Since the portion of the polycrystalline semiconductor layer overlapping the conductor layer is made porous by performing the oxidation treatment, the alignment between the strong electric field drift layer and the conductor layer becomes easy, and the strong electric field drift layer There is an effect that the pattern can be made highly accurate.

A thirty-third aspect of the present invention is the method of manufacturing a field emission type electron source according to the fifteenth aspect, wherein a polycrystalline semiconductor layer is formed on a conductive substrate so as to cover the conductive layer. By performing anodic oxidation treatment using the layer as an electrode at the time of anodizing treatment, a portion of the polycrystalline semiconductor layer overlapping with the conductor layer is made porous, and the porous polycrystalline semiconductor layer is oxidized or nitrided. Forming a strong electric field drift layer, and then removing a part of each polycrystalline semiconductor layer between adjacent strong electric field drift layers and a part of each strong electric field drift layer between regions where a conductive thin film to be formed later is to be formed. After removing by etching, an insulating layer is formed on the entire surface on the main surface side of the conductive substrate, a portion of the insulating layer that intersects with the conductor layer and overlaps with the strong electric field drift layer is opened, and And Since a conductive thin film patterned into a predetermined shape is formed over the insulating layer, electrons can be emitted only from a desired region of the conductive thin film, and an adjacent electric field drift layer can be insulated. To provide a field emission type electron source capable of preventing a current from flowing to a conductive thin film through a polycrystalline semiconductor layer, and performing anodic oxidation using the conductive layer as an electrode during anodic oxidation. As a result, the portion of the polycrystalline semiconductor layer overlapping the conductor layer is made porous, so that the alignment between the strong electric field drift layer and the conductor layer becomes easy, and the pattern of the strong electric field drift layer is highly accurate. There is an effect that can be made.

According to a thirty-fourth aspect of the present invention, there is provided a method of manufacturing a field emission type electron source according to the fourteenth aspect, wherein a polycrystalline semiconductor layer is formed on a conductive substrate so as to cover the conductive layer, and then the polycrystalline semiconductor layer is formed. A part of each part of the conductor layer in the semiconductor layer and a part of each part between the regions where the conductive thin film is to be formed later are removed by etching, and then the conductor layer is used as an electrode during anodization. A portion of the polycrystalline semiconductor layer overlapping with the conductor layer is made porous by performing anodizing treatment using the same, and a strong electric field drift layer is formed by oxidizing or nitriding the porous polycrystalline semiconductor layer. Then, since the conductive thin film patterned into a predetermined shape is formed over the strong electric field drift layer and the conductive substrate, electrons can be emitted only from a desired region of the conductive thin film. It is possible to provide a field emission type electron source that can insulate between adjacent electric field drift layers, and to perform anodic oxidation by using a conductor layer as an electrode during anodic oxidation to form a polycrystalline semiconductor layer. Since the portion overlapping the conductor layer is made porous, the alignment between the strong electric field drift layer and the conductor layer becomes easy, and the pattern of the strong electric field drift layer can be made more precise. There is.

According to a thirty-fifth aspect of the present invention, there is provided a method for manufacturing a field emission electron source according to the twelfth or fifteenth aspect,
Forming a silicon nitride film in a stripe shape on the main surface of the silicon substrate, and selectively oxidizing a portion of the main surface of the silicon substrate that is not covered with the silicon nitride film to form an insulating layer made of silicon oxide; After removing the silicon nitride film, a conductive substrate is formed by introducing an impurity having a different conductivity type from that of the silicon substrate between adjacent insulating layers on the main surface side of the silicon substrate to form a conductive layer composed of a diffusion layer. And
A polycrystalline semiconductor layer is formed over the entire surface of the main surface of the silicon substrate, and the conductive layer is used as an electrode during the anodizing process to perform anodic oxidation to make the polycrystalline semiconductor layer porous, A strong electric field drift layer is formed by oxidizing or nitriding the polycrystalline semiconductor layer thus formed, and a conductive thin film patterned into a predetermined shape is formed on the strong electric field drift layer. A field emission type electron source capable of emitting an electric field and insulating between adjacent electric field drift layers and preventing a current from flowing from the conductive substrate to the conductive thin film through the polycrystalline semiconductor layer. Since the portion of the polycrystalline semiconductor layer overlapping the conductor layer is made porous by using the conductor layer as an electrode during the anodic oxidation process and performing anodic oxidation treatment, With the alignment of the field drift layer and the conductor layer is facilitated, there is effect that it is possible to highly accurate patterns of strong electric field drift layer.

A thirty-sixth aspect of the present invention is the method for manufacturing a field emission type electron source according to the fifteenth aspect, wherein a silicon nitride film is formed in a stripe shape on a main surface of a silicon substrate, and a silicon nitride film is formed on the main surface of the silicon substrate. A portion not covered with the silicon nitride film is selectively oxidized to form an insulating layer made of silicon oxide, and after removing the silicon nitride film, impurities are introduced using the insulating layer as a mask to form a conductive layer made of a diffusion layer. Forming a conductive layer by forming a body layer, and then forming a polycrystalline semiconductor layer on the main surface of the conductive substrate so as to cover the conductive layer; Part of each part of the interlayer is removed by etching, and anodic oxidation is performed using the conductive layer as an electrode during anodic oxidation to make the portion of the polycrystalline semiconductor layer overlapping the conductive layer porous. Forming a strong electric field drift layer by oxidizing or nitriding the porous polycrystalline semiconductor layer, and forming a conductive thin film patterned in a predetermined shape on the strong electric field drift layer; To provide a field emission type electron source capable of emitting electrons only from a region of the same and insulating between adjacent electric field drift layers and preventing a current from flowing from a conductive substrate to a conductive thin film through a polycrystalline semiconductor layer. In addition, since the portion of the polycrystalline semiconductor layer that overlaps the conductor layer is made porous by using the conductor layer as an electrode during the anodic oxidation process and performing anodic oxidation, a strong electric field drift The alignment between the layer and the conductor layer is facilitated, and the pattern of the strong electric field drift layer can be highly accurate.

The invention of claim 37 is the method of manufacturing a field emission type electron source according to claim 15, wherein a silicon nitride film is formed in a stripe shape on the main surface of the silicon substrate, and the silicon nitride film is formed on the main surface of the silicon substrate. A portion not covered with the silicon nitride film is selectively oxidized to form an insulating layer made of silicon oxide, and after removing the silicon nitride film, the silicon substrate is interposed between adjacent insulating layers on the main surface side of the silicon substrate. Forms a conductive layer by introducing impurities having different conductivity types to form a conductive layer composed of a diffusion layer, and then forms a polycrystalline semiconductor layer over the entire main surface side of the silicon substrate, By performing anodic oxidation using the layer as an electrode during anodic oxidation, a portion of the polycrystalline semiconductor layer overlapping the conductor layer is made porous, and the porous polycrystalline semiconductor layer is oxidized or nitrided. To form a strong electric field drift layer. Thereafter, a part of the polycrystalline semiconductor layer in each of the strong electric field drift layers is removed by etching, and then a conductive thin film patterned into a predetermined shape is formed on the strong electric field drift layer. Accordingly, electrons can be emitted only from a desired region of the conductive thin film, and an adjacent electric field drift layer is insulated so that an electric current can be prevented from flowing from the conductive substrate to the conductive thin film through the polycrystalline semiconductor layer. An emission electron source can be provided, and a portion of the polycrystalline semiconductor layer that overlaps the conductor layer is made porous by using the conductor layer as an electrode during the anodic oxidation process. , The alignment between the strong electric field drift layer and the conductor layer becomes easy, and the pattern of the strong electric field drift layer can be made more precise. There is an effect that.

[Brief description of the drawings]

FIG. 1 is a schematic perspective view showing a first embodiment.

FIG. 2 is a perspective view of a main part of the above.

FIG. 3 is a sectional view of the same.

FIG. 4 is a cross-sectional view of a main process for explaining the manufacturing method of the above.

FIG. 5 is a schematic perspective view showing a second embodiment.

FIG. 6 is an explanatory diagram of a main process for describing the manufacturing method.

FIG. 7 is an explanatory diagram of main processes for describing a manufacturing method of a third embodiment.

FIG. 8 is an explanatory diagram of main steps for describing the manufacturing method.

FIG. 9 is a schematic perspective view showing a fourth embodiment.

FIG. 10 is a perspective view of a main part of the above.

FIG. 11 is a sectional view of the same.

FIG. 12 is a main process sectional view for explaining the manufacturing method of the above.

FIG. 13 is a schematic perspective view showing a fifth embodiment.

FIG. 14 is a sectional view of the above.

FIG. 15 is a cross-sectional view of a main process for describing the manufacturing method same as above.

FIG. 16 is a cross-sectional view showing another configuration example of the above.

FIG. 17 is an explanatory diagram of main processes for describing a manufacturing method of Embodiment 6.

FIG. 18 is an explanatory diagram of a main process for describing the manufacturing method.

FIG. 19 is a schematic perspective view showing a seventh embodiment.

FIG. 20 is a sectional view of the above.

FIG. 21 is a main process sectional view for explaining the manufacturing method in the above.

FIG. 22 is a cross-sectional view of a main process for describing the manufacturing method of the above.

FIG. 23 is a main process cross-sectional view for explaining the manufacturing method in the eighth embodiment.

FIG. 24 is a schematic perspective view showing a conventional example.

[Explanation of symbols]

 Reference Signs List 1 p-type silicon substrate 3 polycrystalline silicon layer 6 strong electric field drift layer 7 surface electrode 8 n-type region 10 field emission electron source 31 collector electrode 32 phosphor layer 33 glass substrate

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Koichi Aizawa 1048 Kadoma Kadoma, Osaka Prefecture Matsushita Electric Works, Ltd. (72) Inventor Yoshiaki Honda 1048 Kadoma Kadoma, Kadoma City, Osaka Matsushita Electric Works, Ltd. (72) Inventor Nobuyoshi Koshida 6-5-10-203, Josuihoncho, Kodaira-shi, Tokyo

Claims (37)

[Claims] 1. A conductive substrate, a strong electric field drift layer formed of an oxidized or nitrided porous polycrystalline semiconductor layer formed on one surface side of the conductive substrate, and a conductive layer formed on the strong electric field drift layer. A field emission type in which electrons injected from the conductive substrate drift through the strong electric field drift layer and are emitted through the conductive thin film by applying a voltage with the conductive thin film as a positive electrode with respect to the conductive substrate. An electron source, wherein the conductive substrate has a conductive layer formed in a stripe shape on the one surface side, the strong electric field drift layer is formed in a stripe shape overlapping the conductive layer, and the conductive thin film is A field emission type electron source formed in a stripe shape in a direction intersecting with an electric field drift layer. 2. A polycrystalline semiconductor layer formed on one surface side of a conductive substrate so as to embed an adjacent strong electric field drift layer, wherein the conductive thin film is formed on the strong electric field drift layer and on the polycrystalline semiconductor layer. 2. The field emission type electron source according to claim 1, wherein the field emission type electron source is formed so as to extend over. 3. The field emission type electron source according to claim 1, wherein the conductive substrate is a semiconductor substrate having the conductive layer made of a diffusion layer formed on the one surface side. . 4. The field emission electron source according to claim 3, wherein the conductivity type of the semiconductor substrate is p-type, and the conductivity type of the conductor layer is n-type. 5. The conductive substrate according to claim 1, wherein the conductive substrate comprises at least an insulating substrate and the conductive layer comprising a diffusion layer formed on one surface of the insulating substrate. Or the field emission type electron source according to claim 2. 6. The field emission electron according to claim 5, wherein the conductive substrate includes a semiconductor layer formed on the one surface of the insulating substrate so as to bury each of the adjacent conductive layers. source. 7. The field emission electron source according to claim 6, wherein the conductivity type of the semiconductor layer is p-type and the conductivity type of the conductor layer is n-type. 8. The field emission according to claim 2, wherein the polycrystalline semiconductor layer and the conductor layer are made of semiconductors of different conductivity types, and an insulating layer is provided on the polycrystalline semiconductor layer. Type electron source. 9. The field emission type electron source according to claim 8, wherein the conductive substrate is a semiconductor substrate on which the conductive layer made of a diffusion layer is formed on the one surface side. 10. The semiconductor substrate according to claim 9, wherein the conductivity type of the semiconductor substrate is p-type, and the conductivity type of the conductor layer is n-type.
The field emission type electron source according to the above. 11. The conductive substrate comprises at least an insulating substrate and the conductive layer comprising a diffusion layer formed on one surface of the insulating substrate. The field emission type electron source according to the above. 12. The field emission type electron source according to claim 1, further comprising an insulating layer interposed between adjacent strong electric field drift layers on the one surface side of the conductive substrate. 13. The semiconductor device according to claim 12, wherein the conductive substrate is made of silicon, and the insulating layer is made of silicon oxide.
The field emission type electron source according to the above. 14. A conductive substrate, a strong electric field drift layer formed of an oxidized or nitrided porous polycrystalline semiconductor layer formed on one surface side of the conductive substrate, and a conductive layer formed on the strong electric field drift layer. A field emission type in which electrons injected from the conductive substrate drift through the strong electric field drift layer and are emitted through the conductive thin film by applying a voltage with the conductive thin film as a positive electrode with respect to the conductive substrate. An electron source, wherein the conductive substrate has a conductive layer formed in a stripe shape on the one surface side, the conductive thin film is formed in a stripe shape in a direction crossing the conductive layer, and a strong electric field drift layer The field emission type electron source is provided between the conductor layer and the conductive thin film at a portion where the conductor layer and the conductive thin film overlap. 15. The field emission type electron source according to claim 14, wherein an insulating layer is provided on a region where the strong electric field drift layer is not formed on the one surface side of the conductive substrate. 16. The method for manufacturing a field emission electron source according to claim 2, wherein after forming a polycrystalline semiconductor layer on the conductive substrate so as to cover the conductive layer, the conductive layer is anodized. When the anodizing treatment is performed by using the electrode as an electrode, a portion of the polycrystalline semiconductor layer overlapping with the conductor layer is made porous, and the porous polycrystalline semiconductor layer is oxidized or nitrided to cause a strong electric field drift. Forming a layer, and then forming a conductive thin film crossing the strong electric field drift layer on the strong electric field drift layer. 17. The method for manufacturing a field emission electron source according to claim 2, wherein an insulating layer is formed on a conductive substrate provided with the conductor layer on the one surface side.
A predetermined region on the conductor layer is opened in the insulating layer, a polycrystalline semiconductor layer is formed on the entire surface on the one surface side of the conductive substrate, and then the conductor layer is used as an electrode during anodizing treatment. By performing an oxidation treatment, a portion corresponding to the opening pattern of the insulating layer in the polycrystalline semiconductor layer is made porous, and a strong electric field drift layer is formed by oxidizing or nitriding the porous polycrystalline semiconductor layer, A method for manufacturing a field emission type electron source, comprising forming a conductive thin film patterned into a predetermined shape on a strong electric field drift layer. 18. The method for manufacturing a field emission electron source according to claim 2, wherein the main surface of the semiconductor layer provided on one surface side of the semiconductor substrate or on the entire surface of one surface of the insulating substrate. Forming an insulating layer having a predetermined opening pattern on the side, forming a conductive layer by selectively introducing impurities using the insulating layer as a mask to form a conductive layer,
A polycrystalline semiconductor layer is formed over the entire surface on the one surface side of the conductive substrate, and then an anodizing treatment is performed by using the conductor layer as an electrode during the anodizing treatment to thereby form an insulating layer of the polycrystalline semiconductor layer. A portion corresponding to the opening pattern is made porous, a strong electric field drift layer is formed by oxidizing or nitriding the porous polycrystalline semiconductor layer, and a conductive thin film patterned into a predetermined shape on the strong electric field drift layer Forming a field emission type electron source. 19. The method according to claim 4, wherein the conductive layer is formed by introducing an n-type impurity into a predetermined region on a main surface side of the p-type semiconductor substrate. A polycrystalline semiconductor layer is formed on a p-type semiconductor substrate, and anodization is performed using the conductor layer as an electrode during the anodic oxidation process. Forming a strong electric field drift layer by oxidizing or nitriding the porous polycrystalline semiconductor layer, and forming a conductive thin film patterned into a predetermined shape on the strong electric field drift layer. A method for manufacturing a field emission electron source. 20. The method according to claim 7, wherein the conductive layer is formed by introducing an n-type impurity into a predetermined region of the p-type semiconductor layer. Forming a polycrystalline semiconductor layer on the p-type semiconductor layer on which is formed, and performing anodic oxidation using the conductor layer as an electrode at the time of anodic oxidation treatment, whereby a portion of the polycrystalline semiconductor layer overlapping the conductor layer Forming a strong electric field drift layer by oxidizing or nitriding the porous polycrystalline semiconductor layer, and forming a conductive thin film patterned into a predetermined shape on the strong electric field drift layer. A method for manufacturing a field emission electron source. 21. The method for manufacturing a field emission type electron source according to claim 4, wherein an n-type impurity is introduced into a predetermined region on a main surface side of a p-type semiconductor substrate to form a conductor layer. After forming the conductive substrate, an insulating layer is formed on the main surface of the p-type semiconductor substrate, a predetermined region of the insulating layer on the conductive layer is opened, and then the main surface of the p-type semiconductor substrate is formed. Forming a polycrystalline semiconductor layer on the entire surface on the side, further forming a back electrode on the back surface of the p-type semiconductor substrate, and then performing anodization using the conductor layer as an electrode during anodization through the back electrode. A portion corresponding to the opening pattern of the insulating layer in the polycrystalline semiconductor layer is made porous, and the porous polycrystalline semiconductor layer is oxidized or nitrided to form a strong electric field drift layer. Packing into a predetermined shape on the layer A method for manufacturing a field emission type electron source, comprising forming a turned conductive thin film. 22. The method according to claim 4, wherein the conductive layer is formed by introducing an n-type impurity into a predetermined region on the main surface side of the p-type semiconductor substrate. forming a polycrystalline semiconductor layer on the main surface of the p-type semiconductor substrate; forming a mask layer on the polycrystalline semiconductor layer; opening a predetermined region of the mask layer on the conductor layer; A back electrode is formed on the back surface of the polycrystalline semiconductor layer, and then a portion of the polycrystalline semiconductor layer corresponding to the opening pattern of the mask layer is subjected to anodic oxidation using the conductor layer as an electrode during anodic oxidation through the back electrode. After the porous layer is removed and the mask layer is removed, a strong electric field drift layer is formed by oxidizing or nitriding the porous polycrystalline semiconductor layer, and the conductive thin film patterned into a predetermined shape is formed on the strong electric field drift layer. Form A method for manufacturing a field emission type electron source. 23. The method for manufacturing a field emission electron source according to claim 8, wherein the conductive layer is covered on a conductive substrate provided with the conductive layer made of a diffusion layer on the one surface side. After forming the polycrystalline semiconductor layer, the portion of the polycrystalline semiconductor layer overlapping the conductor layer is made porous by performing anodic oxidation using the conductor layer as an electrode during the anodic oxidation treatment. Oxidizing or nitriding the converted polycrystalline semiconductor layer to form a strong electric field drift layer, and then introducing impurities into the adjacent polycrystalline semiconductor layers between the strong electric field drift layers to change the conductivity type of the polycrystalline semiconductor layer. The conductive layer is made to have a different conductivity type, then an insulating layer is formed on each of the adjacent polycrystalline semiconductor layers between the strong electric field drift layers, and further patterned on the strong electric field drift layer and the insulating layer in a predetermined shape. A method for manufacturing a field emission type electron source, comprising forming a patterned conductive thin film. 24. The method according to claim 10, wherein the conductive layer is formed by introducing an n-type impurity into a predetermined region on the main surface side of the p-type semiconductor substrate. Forming a polycrystalline semiconductor layer on the main surface of a p-type semiconductor substrate and performing anodic oxidation using the conductive layer as an electrode during anodic oxidation, thereby overlapping the polycrystalline semiconductor layer with the conductive layer Is formed, and the porous polycrystalline semiconductor layer is oxidized or nitrided to form a strong electric field drift layer. Thereafter, a p-type impurity is introduced into each of the adjacent polycrystalline semiconductor layers of the strong electric field drift layer. Thus, a p-type polycrystalline semiconductor layer is formed, an insulating layer is formed on the p-type polycrystalline semiconductor layer, and a conductive thin film patterned into a predetermined shape is formed on the strong electric field drift layer and the insulating layer. Formation A method for manufacturing a field emission type electron source. 25. The method for manufacturing a field emission electron source according to claim 12 or claim 14,
After forming an insulating layer on the conductive substrate provided with the conductive layer on the one surface side, a predetermined region of the insulating layer on the conductive layer is opened, and the entire surface of the conductive substrate on the one surface side is multiplied. Forming a crystalline semiconductor layer, and thereafter, at least a part of each portion of the polycrystalline semiconductor layer between the conductor layers is removed by etching;
By performing anodic oxidation using the conductor layer as an electrode during anodic oxidation, a portion of the polycrystalline semiconductor layer corresponding to the opening pattern of the insulating layer is made porous, and the porous polycrystalline semiconductor layer is removed. Forming a strong electric field drift layer by oxidizing or nitriding, and forming a conductive thin film patterned in a predetermined shape over the strong electric field drift layer and the conductive substrate; Production method. 26. The conductive layer is formed by selectively introducing an impurity into a semiconductor layer provided on one surface of an insulating substrate or a predetermined portion on one surface side of the semiconductor substrate. A method for manufacturing a field emission type electron source according to claim 25. 27. The semiconductor layer or the semiconductor substrate comprises p
27. The method according to claim 26, wherein the semiconductor layer is a semiconductor and the conductive layer is formed by introducing an n-type impurity. 28. The method for manufacturing a field emission electron source according to claim 12, claim 14, or claim 15,
A substrate having a semiconductor layer provided on one surface of an insulating substrate or an insulating layer formed on a main surface of a semiconductor substrate, a part of the insulating layer is opened to form a conductor layer, and the insulating layer is used as a mask. A conductive substrate is formed by introducing a dopant to form a conductive layer including a diffusion layer, and then a polycrystalline semiconductor layer is formed on the main surface of the conductive substrate so as to cover the conductive layer, By etching and removing at least a part of each portion of the polycrystalline semiconductor layer between the conductor layers, and performing anodic oxidation using the conductor layer as an electrode during anodic oxidation, thereby forming an insulating layer of the polycrystalline semiconductor layer. The portion corresponding to the opening pattern is made porous, and the porous polycrystalline semiconductor layer is oxidized or nitrided to form a strong electric field drift layer, which is formed over the strong electric field drift layer and the conductive substrate. shape Method of manufacturing a field emission electron source and forming a patterned conductive thin film. 29. The semiconductor layer or the semiconductor substrate is p
29. The method for manufacturing a field emission type electron source according to claim 28, wherein the field emission type electron source is a semiconductor, and the conductor layer is formed by introducing an n-type impurity. 30. The method of manufacturing a field emission type electron source according to claim 12, wherein
After forming an insulating layer on the conductive substrate provided with the conductive layer on the one surface side, a predetermined region of the insulating layer on the conductive layer is opened, and the entire surface of the conductive substrate on the one surface side is multiplied. A crystalline semiconductor layer is formed, and thereafter, a portion corresponding to the opening pattern of the insulating layer in the polycrystalline semiconductor layer is made porous by performing anodic oxidation using the conductor layer as an electrode during anodic oxidation, A strong electric field drift layer is formed by oxidizing or nitriding the porous polycrystalline semiconductor layer, and then a part of each polycrystalline semiconductor layer between the strong electric field drift layers is removed by etching. And forming a conductive thin film patterned into a predetermined shape over a conductive substrate. 31. The method for manufacturing a field emission type electron source according to claim 12, wherein
A substrate having a semiconductor layer provided on one surface of an insulating substrate or an insulating layer formed on a main surface of a semiconductor substrate, a part of the insulating layer is opened to form a conductor layer, and the insulating layer is used as a mask. A conductive substrate is formed by introducing a dopant to form a conductive layer including a diffusion layer, and then a polycrystalline semiconductor layer is formed on the main surface of the conductive substrate so as to cover the conductive layer, By performing anodic oxidation using the conductor layer as an electrode during anodic oxidation, a portion of the polycrystalline semiconductor layer corresponding to the opening pattern of the insulating layer is made porous,
A strong electric field drift layer is formed by oxidizing or nitriding the porous polycrystalline semiconductor layer, and thereafter, a part of each polycrystalline semiconductor layer between the strong electric field drift layers is removed by etching. A method for manufacturing a field emission type electron source, comprising forming a conductive thin film patterned into a predetermined shape over a conductive substrate and a conductive substrate. 32. The method for manufacturing a field emission electron source according to claim 14, wherein after forming a polycrystalline semiconductor layer on the conductive substrate so as to cover the conductive layer, the conductive layer is anodized. When the anodizing treatment is performed by using the electrode as an electrode, a portion of the polycrystalline semiconductor layer overlapping the conductor layer is made porous, and the porous polycrystalline semiconductor layer is oxidized or nitrided to cause a strong electric field drift. Form a layer, then
A part of each polycrystalline semiconductor layer between adjacent strong electric field drift layers and a part of each strong electric field drift layer between regions where a conductive thin film is to be formed later are removed by etching. A method for manufacturing a field emission electron source, comprising forming a conductive thin film patterned into a predetermined shape over a polycrystalline semiconductor layer and a conductive substrate. 33. The method for manufacturing a field emission electron source according to claim 15, wherein after forming a polycrystalline semiconductor layer on the conductive substrate so as to cover the conductive layer, the conductive layer is anodized. When the anodizing treatment is performed by using the electrode as an electrode, a portion of the polycrystalline semiconductor layer overlapping the conductor layer is made porous, and the porous polycrystalline semiconductor layer is oxidized or nitrided to cause a strong electric field drift. Form a layer, then
A part of each polycrystalline semiconductor layer between adjacent strong electric field drift layers and a part of each strong electric field drift layer between regions where a conductive thin film is to be formed later are removed by etching, and then the main surface of the conductive substrate is removed. An insulating layer is formed on the entire surface on the side, and a portion of the insulating layer that intersects the conductor layer and overlaps the strong electric field drift layer is opened, and is patterned into a predetermined shape over the strong electric field drift layer and the insulating layer. A method for manufacturing a field emission type electron source, comprising forming a conductive thin film. 34. The method for manufacturing a field emission type electron source according to claim 14, wherein a polycrystalline semiconductor layer is formed on the conductive substrate so as to cover the conductive layer, and then the conductive layer of the polycrystalline semiconductor layer is formed. Part of each part of the body layer and part of each part between the regions where the conductive thin film is to be formed later are removed by etching, and then the anodic oxidation treatment is performed using the conductor layer as an electrode during the anodic oxidation treatment. By performing, the portion of the polycrystalline semiconductor layer overlapping the conductor layer is made porous,
Oxidizing or nitriding the porous polycrystalline semiconductor layer to form a strong electric field drift layer, and then forming a conductive thin film patterned into a predetermined shape over the strong electric field drift layer and the conductive substrate. A method for manufacturing a field emission type electron source. 35. The method for manufacturing a field emission type electron source according to claim 12, wherein a silicon nitride film is formed in a stripe shape on the main surface of the silicon substrate, and A portion not covered with the silicon nitride film is selectively oxidized to form an insulating layer made of silicon oxide, and after removing the silicon nitride film, a silicon substrate is formed between adjacent insulating layers on the main surface side of the silicon substrate. A conductive substrate is formed by introducing an impurity having a different conductivity type to form a conductive layer composed of a diffusion layer, a polycrystalline semiconductor layer is formed over the entire surface on the main surface side of the silicon substrate, and the conductive layer is formed as an anode. The polycrystalline semiconductor layer is made porous by performing anodic oxidation using it as an electrode during the oxidation process, and a strong electric field drift layer is formed by oxidizing or nitriding the porous polycrystalline semiconductor layer. And forming a conductive thin film patterned into a predetermined shape on the strong electric field drift layer. 36. The method according to claim 15, wherein a silicon nitride film is formed in a stripe shape on the main surface of the silicon substrate, and the silicon nitride film is formed on the main surface of the silicon substrate. An uncovered portion is selectively oxidized to form an insulating layer made of silicon oxide, and after removing the silicon nitride film, impurities are introduced using the insulating layer as a mask to form a conductor layer made of a diffusion layer. Forming a conductive substrate by forming a polycrystalline semiconductor layer on the main surface of the conductive substrate so as to cover the conductive layer, and then forming at least a portion of the polycrystalline semiconductor layer between the conductive layers. Part of the polycrystalline semiconductor layer was overlapped with the conductor layer by performing anodization using the conductor layer as an electrode during the anodic oxidation treatment by removing part of the conductor layer, and the porous layer was made porous. Forming a strong electric field drift layer by oxidizing or nitriding the polycrystalline semiconductor layer, and forming a conductive thin film patterned into a predetermined shape on the strong electric field drift layer; . 37. The method according to claim 15, wherein a silicon nitride film is formed in a stripe shape on the main surface of the silicon substrate, and the silicon nitride film is formed on the main surface of the silicon substrate. An uncovered portion is selectively oxidized to form an insulating layer made of silicon oxide, and after removing the silicon nitride film, the conductivity type is different from that of the silicon substrate between adjacent insulating layers on the main surface side of the silicon substrate A conductive substrate is formed by introducing an impurity to form a conductive layer composed of a diffusion layer, and thereafter, a polycrystalline semiconductor layer is formed over the entire surface on the main surface side of the silicon substrate, and the conductive layer is anodized. A portion of the polycrystalline semiconductor layer that overlaps with the conductor layer is made porous by performing anodizing treatment as an electrode at the time, and the porous polycrystalline semiconductor layer is strengthened by oxidizing or nitriding. After forming an electric field drift layer,
Manufacturing a field emission type electron source, characterized in that a part of the polycrystalline semiconductor layer between the strong electric field drift layers is removed by etching, and then a conductive thin film patterned into a predetermined shape is formed on the strong electric field drift layer. Method.