JP2000150394A - Substrate processing device and substrate aligning device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film-forming device wherein particles are removed in a chamber. SOLUTION: A plasma process device 20 is provided where a substrate 27 transported into a chamber 21 is plasma-processed. Here, a rotative table 24 which holds the substrate 27, a heater 33 which heats the substrate 27 held by the rotative table 24 to a specified temperature, a motor 26 which drives/ rotates the rotative table 24, a gas supply nozzle 22 which supplies a gas in the chamber 21 before the substrate 27 is plasma-processed so that the particles sticking to the substrate 27 are removed, and an exhaust opening 34 which evacuates the chamber 22, are provided. By driving/rotating the substrate held by a holding means, a sucking effect of cleaning gas caused by substrate's rotation forms an even gas flow to the substrate, and the flow together with a centrifugal force acts to remove the particles sticking to the upper surface of the substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a substrate processing apparatus such as a film forming apparatus, and more particularly to a CVD apparatus.

[0002]

2. Description of the Related Art In a semiconductor film forming apparatus, dust attached to a substrate such as a semiconductor wafer affects the yield of semiconductor device manufacturing. The surface of the substrate is cleaned using a cleaning apparatus, particles are removed from the surface of the substrate, and the substrate is stored and managed in a dust-controlled clean room, and the next step, CVD (chemical v), is performed.
Film formation processing such as a deposition (a deposition) processing and etching processing are performed.

However, if the time from when the substrate is cleaned to when the film is formed is long, the probability of particles adhering to the substrate surface during that time is increased, and the cleaning process performed in the previous process is wasted. If the film forming process is performed in this state, the film is formed on the surface of the particles and the circuit pattern is formed, thereby causing a defect.

Therefore, in order to prevent such a defect from occurring, the substrate is washed immediately before film formation on the substrate, thereby preventing particles from adhering during the cleaning.

[0005]

However, even if the substrate is cleanly cleaned, some particles adhere to it when the substrate is exposed to the air in a clean room. This is because particles cannot be completely removed even though the inside of the clean room is managed in a clean manner.

[0006] Such adhesion of particles to the substrate surface causes a defect as described above in a CVD apparatus or the like which forms a film on a substrate, and thus greatly affects the yield of semiconductor device manufacture. .

Here, in a conventional CVD apparatus or the like,
For example, the cleaning processing is performed only by the cleaning processing apparatus using a single-wafer-type cleaning processing apparatus or the like to remove particles, and the particles are removed inside a chamber of a CVD apparatus or the like immediately before the film forming processing. There is no configuration for performing such a process, and if such a device is present, the yield can be further improved, and realization is desired.

The present invention has been made based on the above circumstances, and an object of the present invention is to provide a substrate processing apparatus and a substrate positioning apparatus capable of removing particles inside a chamber. is there.

[0009]

According to a first aspect of the present invention, there is provided a substrate processing apparatus for processing a substrate conveyed into a processing chamber, comprising: a holding unit for holding the substrate; A heating unit for heating the substrate held by the holding unit; a driving unit for rotating the holding unit; a processing gas supply unit for supplying a processing gas for processing the substrate; A substrate processing apparatus comprising: a cleaning gas supply unit that supplies a cleaning gas that removes particles that have been removed; and a suction unit that suctions a vacuum inside the processing chamber.

According to a second aspect of the present invention, there is provided the substrate processing apparatus according to the first aspect, wherein the holding means includes a vibration mechanism for applying a vertical vibration to the substrate.

The invention according to claim 3 is the substrate processing apparatus according to claim 1 or 2, wherein the substrate processing apparatus is a film forming apparatus.

According to a fourth aspect of the present invention, there is provided the substrate apparatus according to the first or second aspect, wherein the substrate processing apparatus is an etching apparatus.

According to a fifth aspect of the present invention, there is provided a substrate positioning apparatus for positioning a substrate in a processing chamber, a holding unit for holding the substrate, a driving unit for rotating the holding unit, and a driving unit. Detecting means for detecting a displacement of the substrate driven by the rotation, cleaning gas supplying means for supplying a cleaning gas to the inside of the processing chamber to remove particles attached to the substrate, and vacuum suction of the inside of the processing chamber And a suction unit.

According to a sixth aspect of the present invention, there is provided the substrate positioning apparatus according to the fifth aspect, further comprising heating means for heating the substrate held by the holding means to a predetermined temperature. .

According to the first aspect of the present invention, since the driving means for rotating the holding means is provided, by rotating the substrate held by the holding means, the particles attached to the upper surface of the substrate are subjected to centrifugal force. To remove these particles.

Further, a cleaning gas supply means for supplying a cleaning gas to the inside of the processing chamber to remove particles adhered to the substrate before processing the substrate, and a suction means for vacuum-suctioning the inside of the processing chamber are provided. Therefore, by rotating the substrate, a gas flow is generated in the cleaning gas toward the substrate, so that the particles attached to the upper surface of the substrate can be blown off. Further, the gas supplied to the inside of the chamber is evacuated by vacuum suction by the suction means, so that the gas flow is more easily formed on the upper surface of the substrate, whereby the particles attached to the upper surface of the substrate are more easily removed. State.

Further, since the heating means for heating the substrate held by the holding means to a predetermined temperature is provided, it becomes possible to evaporate the water accompanying the particles attached to the upper surface of the substrate, thereby The particles adsorbed on the substrate are easily removed by the moisture.

According to the second aspect of the present invention, the holding means is provided with a vibration mechanism capable of vibrating in the vertical direction, and the vibration mechanism applies a vibration in the vertical direction to the substrate held by the holding means. Therefore, the particles attached to the upper surface of the substrate are subjected to vibration by the above-described vibration mechanism, so that the particles can be more easily removed.

According to the third aspect of the present invention, since the substrate processing apparatus is a film forming apparatus, the particles attached to the upper surface of the substrate are removed before the film is formed, thereby forming a film on the substrate. Can be performed with high accuracy, and thereby the occurrence of defects can be reduced. For this reason, it is possible to improve the product yield.

According to the fourth aspect of the present invention, since the substrate processing apparatus is an etching apparatus, if the particles adhering to the upper surface of the substrate are removed prior to the etching processing, the etching processing on the substrate can be performed accurately. it can. As a result, the cause of the defect in the next step such as film formation is eliminated, and even when a circuit pattern is formed on the upper surface of the substrate, the accuracy of forming the circuit pattern is improved.

According to the fifth aspect of the present invention, in a substrate positioning apparatus for performing substrate positioning, a holding means for holding a substrate, a driving means for driving the holding means to rotate, and a driving means for rotating the holding means. A detection unit for detecting a displacement of the substrate, a cleaning gas supply unit for supplying a cleaning gas into the processing chamber to remove particles attached to the substrate, and a suction unit for vacuum-suctioning the inside of the chamber. The particles adhering to the upper surface of the substrate can be removed by the gas supply unit and the suction unit while detecting the displacement of the substrate by the detection unit. As a result, for example, in a multi-chamber system, etc., it is possible to detect the displacement of the substrate and to remove particles attached to the upper surface of the substrate. Can be performed well.

According to the sixth aspect of the present invention, since the heating means for heating the substrate held by the holding means to a predetermined temperature is provided, even in the substrate positioning apparatus, the substrate is adsorbed on the upper surface of the substrate by moisture. Particles can be removed.

[0023]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. A CVD apparatus 20 as a film forming apparatus, which is a type of a substrate processing apparatus, includes a chamber 2 for introducing a reactive gas into the inside to perform a film forming process.
One. A gas supply nozzle 22 for supplying an inert gas such as nitrogen gas to the inside is attached to the upper end surface of the chamber 21. And the like.

The inert gas introduced into the chamber 21 is supplied to a gas rectifying plate 23 for partitioning the inside of the chamber 21.
Will be introduced. The gas straightening plate 23 is connected to the gas supply nozzle 22.
The introduced inert gas is homogenized and introduced downward,
Thereby, the introduction of the inert gas into the substrate 27 provided below is made uniform.

A rotary table 24 is located below the gas flow plate 23. The rotating shaft 24 is attached to the rotating table 24 on the lower surface side. A lower end of the rotating shaft 25 is connected to a rotating motor 26 provided outside the chamber 21.
It is connected to. Thereby, the rotation drive of the rotation motor 26 is directly transmitted to the rotary table 24.

As the rotary motor 26, a magnetic bearing motor 26a as shown in FIG. 2 is used. Magnetic bearing motor 26a
Has a rotary shaft 25 connected to the rotary table 24 at the center. The rotating shaft 25 has protrusions 28 formed at intervals of 90 degrees along the axial direction of the outer peripheral surface. The protrusions 28 are provided so as to closely face the coils (A1, A2). Have been.

The coils (A1, A2)...
As in the case of 8, about four sets are arranged around the rotation shaft 25.
That is, as shown in FIG. 2B, the coils (A1, A2),
(B1, B2), (C1, C2), (D1, D2) are respectively arranged at intervals of 90 degrees.

As shown in FIG. 2 (a), the coils (A1, A2)...
(A2, B2, C2, D2) are arranged at a predetermined distance from (B1, C1, D1).

The coils (A1, A2)...
9 are electrically connected. This allows the coil
A1 and the coil A2 are provided to have the same potential. Further, the wiring 29 is electrically connected to the rotation control circuit 30, and controls a current to be conducted to the coils (A1, A2). The other coils (B1, B2), (C1, C2),
(D1, D2) have the same configuration, and the coils (A1, A2) are electrically connected to the rotation control circuit 30 independently.

A power supply circuit 31 is connected to the rotation control circuit 30. The power supply circuit 31 converts AC power supplied from the outside into DC power, and supplies power to the rotation control circuit 30 and the vibration application control circuit 32 therefrom.

The coils (A1, A2),
By turning on the current while sequentially switching the current to (B1, B2), (C1, C2), and (D1, D2), a rotational force can be applied to the rotating shaft 25.

The other end (the lower end in the figure) of the rotating shaft 25 on the opposite side to the portion where the rotary table 24 is mounted.
Is provided with a coil E so as to be closely opposed to the end of the rotating shaft 25. The coil E applies vibration to the rotating shaft 25 in the axial direction (vertical direction). The coil E is connected to the vibration applying means via a wiring 33. The coil E is configured to be supplied with a high-frequency current, whereby the rotating shaft 25 can be vibrated in the vertical direction. This magnetic bearing motor 2
When 6a is used, it is possible to perform the rotation drive while keeping the rotating shaft 25 in a completely floating state, that is, in a non-contact state.

A coil E is provided.
When high frequency is applied to the rotary shaft 25, the rotary shaft 25 vibrates in the vertical direction, so that the vibration applied to the rotary shaft 25 makes it easier to remove particles attached to the substrate 27.

The rotary table 24 has a locking means 27 on its outer peripheral portion so that the substrate 27 can be held on its upper surface.
a is provided. The locking means 27 a is, for example, a pin-shaped member provided to protrude upward by a predetermined height, and the pin-shaped members are arranged at predetermined intervals along the outer peripheral portion of the turntable 24. As a result, the board 27 is properly locked.

Below the rotary table 24, a heater 33 is provided.
Is installed. The heater 33 heats the substrate 27 mounted on the rotary table 24 to a predetermined temperature to adjust the temperature to a temperature suitable for the film forming process, thereby improving the development of the poly-Si film. To be able to do it.

An exhaust port 34 for exhausting the inside of the chamber 21 is provided at the bottom of the chamber 21. This exhaust port 34 is connected to suction means (not shown),
By operating the suction means, vacuum suction inside the chamber 21 can be performed.

The above-mentioned gas supply nozzle 22 has a configuration in which an inert gas can be introduced into the chamber 21.
The gas supply nozzle 22 is configured to be capable of introducing a processing gas for a film forming process after introducing the inert gas. For this reason, the gas supply nozzle 22 is also connected to a processing gas supply source (not shown), and switching between the supply of the inert gas and the supply of the processing gas is performed by, for example, a switching valve. I have.

Further, another gas supply nozzle for supplying the processing gas may be provided separately from the gas supply nozzle 22 described above.

The CVD apparatus 20 having the above configuration
The operation of is described below. When forming the film on the substrate 27, an inert gas is supplied into the chamber 21 from a gas supply nozzle 22 attached to the upper end of the chamber 21. In this case, the supply of the inert gas into the inside of the chamber 21 is, for example, a nitrogen gas as the inert gas in a range of about 30 to 50 slm. At the same time, vacuum suction inside the chamber 21 is performed, and the pressure inside the chamber 21 is set within a range of several torr to 200 torr.

In addition to setting the pressure inside the chamber 21,
The substrate 27 held on the turntable 24 is driven to rotate. The rotation of the substrate 27 is preferably as fast as possible from the necessity of removing particles. As an example, the rotation of the rotary table 24 is performed at about 3000 rpm.

The rotary table 24 is driven to rotate, and the substrate 27 is heated by the heater 33 in order to evaporate the moisture attached to the upper surface of the substrate 27. The heater 33 is heated to about 650 to 750 degrees in order to develop a Poly-Si film on the substrate 27.
In the apparatus 20, the practical range is about 400 to 1200 degrees, and the higher the temperature, the more the moisture evaporates. Therefore, it is possible to set an appropriate temperature in such a range.

Then, an inert gas (cleaning gas)
The flow is adjusted and blown against the substrate 27, and the substrate 27 is driven to rotate, so that the gas flow to the wafer surface becomes more uniform due to the suction effect of the rotation.
Accordingly, the inert gas generates a flow toward the outer peripheral side of the substrate 27. The particles adhering to the upper surface of the substrate 27 are blown off by the flow of the inert gas, and the surface of the substrate 27 is cleaned. The flow of the inert gas toward the outer peripheral side of the substrate 27 is more likely to be generated by suction and exhaust of the inert gas from the exhaust port 34.

The rotation speed of the rotary table 24 is
The higher the number of rotations, the better, in order to facilitate the movement of the particles attached to the upper surface of the substrate 27. As an example, the rotary table 24 is set at about 3000 rpm, and a film is formed.

When the rotary table 24 is driven to rotate, the magnetic bearing motor 26 as the rotary motor 26 is used.
a may be activated to apply a vertical vibration to the rotary table 24. Then, particles attached to the surface of the substrate 27 can be removed by the application of the vibration.

After the removal of the particles from the surface of the substrate 27 is completed, the processing gas is supplied from the gas supply nozzle 22. Thus, the cleaned surface of the substrate 27 is subjected to the CVD process.

According to the CVD apparatus 20 having such a configuration, the inert gas is introduced into the surface of the substrate 27 by the gas supply nozzle 22 to give the flow of the inert gas to the surface of the substrate 27. The particles attached to the surface of the surface 27 can be blown off. Therefore, if the film forming process is performed on the surface of the substrate 27 after the surface of the substrate 27 is cleaned, the film forming process on the substrate 27 can be performed satisfactorily, and the yield of the semiconductor manufacturing apparatus can be reduced. It will be improved.

A heater 33 is provided below the rotary table 24. The heater 33 is operated to heat the substrate 27 to an appropriate temperature, so that the substrate 33 adheres to the surface of the substrate 27 together with particles. It becomes possible to evaporate water. This makes it possible to eliminate the moisture that gives the adhesion of the particles an adhesive force, and it is possible to further remove the particles from the surface of the substrate 27.

Further, the rotary motor 26 is a magnetic bearing motor 2
6a, which is a configuration capable of applying a vertical vibration to the substrate 27. By applying the vibration to the substrate 27, it is possible to remove particles from the surface of the substrate 27 in a single layer. I have.

The embodiment of the present invention has been described above. However, the present invention can be variously modified. This is described below.

In the above embodiment, the supply of the inert gas to the substrate 27, the formation of an air flow on the surface of the substrate 27 by vacuum suction, the rotation drive of the rotary table 24, the heating by the heater 33, the magnetic bearing motor 26a Although the configuration is such that the application of vibration in the vertical direction can be realized respectively, it is also possible to adopt a configuration in which any of these is combined to remove particles.

The present invention is not limited to the CVD apparatus 20, and the configuration of the present invention can be applied to various processing apparatuses such as an etching apparatus. In particular, the configuration of the etching apparatus is substantially the same as that of the above-described CVD apparatus 20. Further, the present invention can be applied to a plasma processing apparatus other than the etching processing apparatus.

Further, the present invention can be applied to a substrate positioning device 47 for aligning the orientation flat 51 and the notch with the substrate 27. For example, in a multi-chamber system 40 as shown in FIG. 3, for example, a generally hexagonal transfer chamber 41 is usually formed at the center, and a transfer robot 42 is provided in the transfer chamber 41. Further, together with a load lock chamber 43 in which the substrate 27 is transported from another cleaning processing apparatus or the like, and a process chamber 44 such as the CVD apparatus 20, a substrate positioning apparatus 47 shown in FIG. The existing substrate alignment chamber 45 is provided to configure the multi-chamber system 40. In addition, it has a cooling chamber 46 for cooling the substrate 27 after the process.

In this case, the substrate positioning device 47
A turntable 48 for holding the substrate 27 is provided, and the turntable 48 is configured to be driven to rotate by a rotation mechanism 49. And turntable 48
A sensor 50 is provided to detect an outer peripheral portion of the substrate 47 placed thereon, and the sensor 50
Detection is possible.

In this case, particles adhering to the surface of the substrate 27 can be removed by the sensor 50 using the rotation mechanism 49.

Further, by providing the substrate positioning chamber 45 of the substrate positioning apparatus 47 with the gas supply nozzle and the exhaust port described in the above-described embodiment, the heater, and the magnetic bearing motor, the particles can be further increased. Is configured to be able to be favorably removed. In addition, various modifications can be made without departing from the scope of the present invention.

[0056]

As described above, according to the present invention,
By rotating the substrate held by the holding means, particles adhering to the upper surface of the substrate are formed into a uniform gas flow on the substrate by the suction effect of the cleaning gas due to the rotation of the substrate, and this flow and centrifugal force are applied. To remove these particles.

Further, the particles attached to the upper surface of the substrate can be blown off by supplying the gas to the upper surface by the gas supply means. Further, by exhausting the gas supplied to the inside of the chamber by vacuum suction, a gas flow is more easily formed on the upper surface of the substrate, thereby making it easier to remove particles attached to the upper surface of the substrate. It becomes possible.

Further, it becomes possible to evaporate the water accompanying the particles attached to the upper surface of the substrate by the heating means, thereby easily removing the particles adsorbed on the substrate by the water.

If a vibration mechanism is provided, the substrate held by the holding means is subjected to vertical vibration, so that particles adhering to the upper surface of the substrate can be more effectively removed. .

[Brief description of the drawings]

FIG. 1 is a side sectional view showing a configuration of a CVD apparatus according to an embodiment of the present invention.

FIGS. 2A and 2B are diagrams showing a configuration of a magnetic bearing motor according to the embodiment, wherein FIG. 2A is a diagram showing a configuration of a magnetic bearing motor viewed from a side, and FIG. FIG.

FIG. 3 is a plan view showing a configuration of a multi-chamber system and a substrate alignment device according to a modification of the present invention.

FIG. 4 is a diagram showing a configuration of a substrate positioning device and a transfer robot according to a modification of the present invention.

[Explanation of symbols]

 Reference Signs List 20 CVD apparatus 21 Chamber 22 Gas supply nozzle 24 Rotary table 25 Rotary shaft 26 Rotary motor 27 Substrate 33 Heater 34 Exhaust port 40 Multi-chamber system 47 Substrate alignment device

Continued on the front page F term (reference) 4K030 DA06 EA03 EA11 GA04 GA06 KA12 KA23 KA28 4M104 DD44 HH20 5F004 AA14 BA19 BB18 BB21 BB26 BC06 BC08 BD04 CA09 5F031 HA37 JA27 KA13 KA14 LA07 MA04 MA28 MA32 NA02 AD04 NA16 PA03 AB26 DP28 DQ17 EB08 EB13 EE20 EF05 EF14 EK07 EM10 EN04 EN06 HA25

Claims (6)

[Claims] 1. A substrate processing apparatus for processing a substrate conveyed into a processing chamber, comprising: holding means for holding the substrate; heating means for heating the substrate held by the holding means; Driving means for performing a rotational drive; processing gas supply means for supplying a processing gas for processing the substrate; cleaning gas supply means for supplying a cleaning gas for removing particles attached to the substrate; And a suction means for vacuum suction of the substrate. 2. The substrate processing apparatus according to claim 1, wherein said holding means includes a vibration mechanism for applying a vertical vibration to said substrate. 3. The substrate processing apparatus according to claim 1, wherein said substrate processing apparatus is a film forming apparatus. 4. The substrate apparatus according to claim 1, wherein said substrate processing apparatus is an etching apparatus. 5. A substrate positioning apparatus for performing positioning of a substrate inside a processing chamber, comprising: holding means for holding the substrate; driving means for rotating the holding means; and a substrate rotated by the driving means. Detecting means for detecting a displacement of the processing chamber, cleaning gas supplying means for supplying a cleaning gas to the inside of the processing chamber to remove particles attached to the substrate, and suction means for vacuum-suctioning the inside of the processing chamber. A substrate alignment device, comprising: 6. The substrate positioning apparatus according to claim 5, further comprising heating means for heating the substrate held by said holding means to a predetermined temperature.