TW202101564A - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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TW202101564A
TW202101564A TW109108357A TW109108357A TW202101564A TW 202101564 A TW202101564 A TW 202101564A TW 109108357 A TW109108357 A TW 109108357A TW 109108357 A TW109108357 A TW 109108357A TW 202101564 A TW202101564 A TW 202101564A
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substrate
thermoplastic resin
outer peripheral
resin
supply head
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TW109108357A
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TWI753380B (en
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松下淳
長嶋裕次
秋本紗希
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日商芝浦機械電子裝置股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)

Abstract

The invention provides a substrate processing apparatus and a substrate processing method capable of suppressing reduction of the size of a substrate. The substrate processing apparatus (10) according to an embodiment is provided with: a table (30) for supporting a substrate (W); a substrate heating unit (40) for heating the substrate (W) supported by the table (30); and a supply head (61) which holds a resin material (B1) as a cured thermoplastic resin and makes the held resin material (B1) come in contact with the outer peripheral end (A1) of the substrate (W) supported by the table (30) and heated by the substrate heating unit (40), while moving relative to the substrate (W).

Description

基板處理裝置及基板處理方法Substrate processing device and substrate processing method

本發明之實施形態，係有關於基板處理裝置及基板處理方法。The embodiment of the present invention relates to a substrate processing apparatus and a substrate processing method.

基板處理裝置，係被使用於半導體或液晶面板等之製造工程中，基於均一性以及再現性之理由，係廣泛使用有將基板1枚1枚地藉由專用之處理室來進行處理的單片方式之基板處理裝置。例如，在半導體之製造工程中，係存在有層積記憶體元件製造工程，但是，作為在該製造工程中之層積矽晶圓之薄化工程，係存在有將基板之元件層上之Si層以蝕刻液來薄化的蝕刻工程，在此蝕刻工程中，係使用有單片方式之基板處理裝置。 在前述之蝕刻工程中，蝕刻液係被供給至基板之中央附近處，並藉由基板旋轉之離心力而從基板之外周流落。此時，基板之外周面(基板之外周的端面)也會被蝕刻液所侵蝕，並會有基板之直徑變短或基板尺寸變小的情形(基板尺寸之縮小)。若是發生此基板尺寸之縮小，則係成為無法在基板之外周部分處得到所期望之尺寸的元件晶片，而發生有元件晶片之損失(能夠從1枚之基板所得到的所期望之尺寸之元件晶片數量的減少)。又，在後續工程中之由機器人所致之搬送等之中，由於係以基板尺寸作為基準而進行有搬送裝置之設計和設定，因此，若是基板尺寸成為較容許值而更小，則在後續工程中之基板搬送係成為無法進行。Substrate processing equipment is used in the manufacturing process of semiconductors, liquid crystal panels, etc. For reasons of uniformity and reproducibility, it is widely used to process substrates one by one in a dedicated processing chamber. Method of substrate processing equipment. For example, in the manufacturing process of semiconductors, there is a manufacturing process of laminated memory devices. However, as the thinning process of a laminated silicon wafer in this manufacturing process, there is a process of removing Si on the element layer of the substrate. An etching process in which the layer is thinned with an etching solution. In this etching process, a single-chip substrate processing device is used. In the aforementioned etching process, the etching liquid is supplied to the vicinity of the center of the substrate, and flows from the outer periphery of the substrate by the centrifugal force of the rotation of the substrate. At this time, the outer circumference of the substrate (the end surface of the outer circumference of the substrate) will also be corroded by the etching solution, and the diameter of the substrate may be shortened or the size of the substrate may be reduced (substrate size reduction). If this reduction in the size of the substrate occurs, the device chip of the desired size cannot be obtained at the outer periphery of the substrate, and the loss of the device chip occurs (the device of the desired size can be obtained from a single substrate Decrease in the number of wafers). In addition, in the transfer by robots in the subsequent process, the design and setting of the transfer device are based on the substrate size. Therefore, if the substrate size becomes smaller than the allowable value, the subsequent The substrate transportation system in the process became impossible.

本發明所欲解決之課題，係在於提供一種能夠對於基板尺寸之縮小作抑制的基板處理裝置及基板處理方法。 本發明之實施形態之基板處理裝置，係具備有：台，係支持成為蝕刻對象之基板；和基板加熱部，係將藉由前述台而被作了支持的前述基板加熱；和供給頭，係保持硬化狀態之熱可塑性樹脂，並使所保持了的前述熱可塑性樹脂，與藉由前述台而被作支持並且藉由前述基板加熱部而被作了加熱的前述基板之外周端部作接觸，來使軟化了的前述熱可塑性樹脂附著於前述基板而作供給，並且相對於前述基板而進行相對移動。 本發明之實施形態之基板處理方法，係具備有：藉由台來支持成為蝕刻對象之基板之工程；和將藉由前述台而被作了支持的前述基板，藉由基板加熱部而加熱之工程；和對於藉由前述台而被作支持並且藉由前述基板加熱部而被作了加熱的前述基板之外周端部，而將硬化狀態之熱可塑性樹脂藉由供給頭來作保持並使其作接觸，來使軟化了的前述熱可塑性樹脂附著於前述基板而作供給，並且相對於前述基板而使前述供給頭進行相對移動之工程。 若依據本發明之實施形態，則係能夠對於基板尺寸之縮小作抑制。The problem to be solved by the present invention is to provide a substrate processing apparatus and a substrate processing method that can suppress the reduction in the size of the substrate. The substrate processing apparatus according to the embodiment of the present invention is provided with: a table which supports a substrate to be an etching target; and a substrate heating section which heats the substrate supported by the table; and a supply head which is Maintaining the thermoplastic resin in a hardened state, and bringing the held thermoplastic resin into contact with the outer peripheral end of the substrate supported by the stage and heated by the substrate heating section, The softened thermoplastic resin is attached to the substrate for supply, and moves relative to the substrate. The substrate processing method according to the embodiment of the present invention includes: a process of supporting a substrate to be an etching target by a stage; and heating the substrate supported by the stage by a substrate heating unit Process; and for the outer peripheral end portion of the substrate supported by the stage and heated by the substrate heating section, the hardened thermoplastic resin is held by the supply head and made The process of making contact to make the softened thermoplastic resin adhere to the substrate for supply, and to move the supply head relative to the substrate. According to the embodiment of the present invention, the reduction in the size of the substrate can be suppressed.

以下，參考圖面，針對其中一個實施形態作說明。 (基本構成) 如同圖1中所示一般，第1實施形態之基板處理裝置10，係具備有處理室20、和台30、和基板加熱部40、和台旋轉機構50、和樹脂供給部60、和樹脂洗淨部70、和樹脂成形部80、以及控制部90。 處理室20，係為用以對於具備有被處理面Wa之基板W進行處理的處理盒。此處理室20，例如，係被形成為箱形狀，並收容台30、台旋轉機構50之一部分、樹脂供給部60、樹脂洗淨部70、樹脂成形部80等。作為基板W，例如，係使用有晶圓或液晶基板。 在前述之處理室20之上面處，係被設置有清淨單元21。此清淨單元21，例如，係具備有HEPA濾網等之濾網和風扇(均未圖示)，並將從基板處理裝置10所被作設置的清淨室的頂面所下吹的下吹流淨化而導入至處理室20內，以在處理室20內產生從上方而流動至下方的氣流。清淨單元21，係被與控制部90作電性連接，其之驅動係被控制部90所控制。 台30，係被定位在處理室20內之中央附近處，並被水平地設置在台旋轉機構50上，而成為能夠在水平面內旋轉。此台30，例如，係被稱作轉台(旋轉台)，基板W之被處理面Wa之中心，係被定位於台30之旋轉軸上。台30，係將被載置於其之上面處的基板W作吸附並作保持(吸附保持)。 基板加熱部40，係被形成為環狀(例如，圓環狀)，並被設置於台30之上面(基板W所被作載置之面)側處。此基板加熱部40，係與被台30所作了支持的基板W(台30上之基板W)之下面之外周端部A1作接觸，並加熱台30上之基板W。作為基板加熱部40，例如，係使用有熱板或鞘套加熱器、燈管加熱器、陶瓷加熱器、石英管加熱器等。基板加熱部40，係被與控制部90作電性連接，其之驅動係被控制部90所控制。 台旋轉機構50，係支持台30，並構成為使該台30在水平面內作旋轉。例如，台旋轉機構50，係具備有被與台30之中央作了連結的旋轉軸、和使該旋轉軸旋轉的馬達(均未圖示)。此台旋轉機構50，係藉由馬達之驅動而經由旋轉軸來使台30旋轉。台旋轉機構50，係被與控制部90作電性連接，其之驅動係被控制部90所控制。 樹脂供給部60，係具備有供給頭61、和頭移動機構62。此樹脂供給部60，係藉由頭移動機構62來使供給頭61移動，並從台30上之基板W之外周端部A1之上方，來使供給頭61所保持的身為硬化狀態之熱可塑性樹脂之樹脂材B1與台30上之基板W之外周端部A1作接觸。 供給頭61，係如同圖2中所示一般，身為以前端部來將樹脂材B1作保持之治具。此供給頭61，係被形成為能夠藉由頭移動機構62來在台30之上方或周圍而朝水平方向、鉛直方向以及傾斜方向移動、亦即是被形成為能夠以3維來自由地移動。此供給頭61，係藉由頭移動機構62來移動並與台30上之基板W之外周端部A1相對向，並且將所保持的樹脂材B1推壓附著於台30上之基板W之外周端部A1處而使其作接觸。 樹脂材B1，係身為硬化狀態(固體狀)之熱可塑性樹脂，例如，係身為使熱可塑性樹脂被形成為圓柱狀(棒狀)並作了硬化者。樹脂材B1之直徑，例如係為10mm。此樹脂材B1，係被形成為能夠對於供給頭61作裝卸，而成為能夠進行其之交換。作為熱可塑性樹脂，例如，係使用有PVA(聚乙烯醇)、EVA(乙烯醋酸乙烯酯共聚物)、胺基甲酸乙酯系樹脂。此熱可塑性樹脂，係相對於在蝕刻工程中所使用之蝕刻液而具備有難溶性、亦即是具備有耐性，而作為保護基板W免於受到蝕刻液之影響的保護材而起作用。熱可塑性樹脂，例如，若是其之溫度成為150℃以上則會軟化，若是成為較150℃更低則會硬化。 頭移動機構62，係具備有可動臂62a、和臂移動機構62b、以及複數之旋轉機構62c、62d、62e。此頭移動機構62，係藉由臂移動機構62b和旋轉機構62d等而使可動臂62a移動，並使供給頭61移動至所期望之位置處。 可動臂62a，係被形成為可藉由旋轉機構62c而在中途作彎折。旋轉機構62c，係具備有於水平方向上延伸之旋轉軸和馬達(均未圖示)，並作為關節而起作用。可動臂62a之其中一端，係經由旋轉機構62d而被設置於臂移動機構62b處，可動臂62a係被形成為能夠以其中一端作為旋轉中心並作旋轉。旋轉機構62d，係具備有於水平方向上延伸之旋轉軸和馬達(均未圖示)，並作為關節而起作用。又，可動臂62a之另外一端，係經由旋轉機構62e而將供給頭61作保持。旋轉機構62e，係具備有於鉛直方向上延伸之旋轉軸和馬達(均未圖示)，並作為使供給頭61作旋轉的旋轉驅動部而起作用。各旋轉機構62c、62d以及62e，係分別被與控制部90作電性連接，該些之驅動係被控制部90所控制。 臂移動機構62b，係將可動臂62a以及旋轉機構62d等作支持，並使可動臂62a於水平方向上搖動。例如，臂移動機構62b，係具備有將可動臂62a以及旋轉機構62d作支持之支柱和使該支柱旋轉之馬達等(均未圖示)。此臂移動機構62b，係藉由馬達之驅動而使支柱旋轉並使可動臂62a在水平方向上移動。臂移動機構62b，係被與控制部90作電性連接，其之驅動係被控制部90所控制。 於此，如同圖3以及圖4中所示一般，基板W之外周端部A1，係藉由基板W之上面(被處理面Wa)之外周區域A1a、和基板W之外周面(基板W之外周之端面)A1b、以及基板W之下面之外周區域A1c，而構成之。又，如同圖3～圖5中所示一般，在基板W之上面處，係存在有在蝕刻處理工程中而成為蝕刻處理之對象的蝕刻對象區域R1。蝕刻對象區域R1，係身為將基板W之上面之外周區域A1a去除後的基板W之上面之區域。此蝕刻對象區域R1以外之區域，係身為在蝕刻處理工程中而並非為蝕刻處理之對象的非蝕刻對象區域。蝕刻對象區域R1係為圓狀之區域(參照圖5)，基板W之上面之外周區域A1a、基板W之下面之外周區域A1c，係分別身為從基板W之外周起朝向內側(基板W之中心側)而具備有數mm(例如4mm以下)的特定寬幅之圓環狀之區域。 例如，前述之供給頭61，在熱可塑性樹脂B1a之塗布工程中，係藉由頭移動機構62來移動至台30上之基板W處的外周區域A1a之正上方之位置處，並從該正上方之位置起而下降，並且如同圖3中所示一般，使樹脂材B1與台30上之基板W之外周區域A1a作接觸。台30上之基板W係藉由基板加熱部40而被加熱，基板W之外周端部A1之溫度，例如係成為150℃以上。因此，與台30上之基板W之外周區域A1a作了接觸的樹脂材B1之前端部分(圖3中之下端部分)係軟化。軟化了的樹脂材B1之前端部分之熱可塑性樹脂，係以覆蓋基板W之外周區域A1a以及外周面A1b的方式而浸濕並擴廣，並因應於台30之旋轉，來沿著台30上之基板W之外周區域A1a以及外周面A1b而依序附著(參照圖4以及圖5)。 藉由此，如同圖4以及圖5中所示一般，在基板W之外周區域A1a以及外周面A1b之全體處，係被塗布有軟化狀態之熱可塑性樹脂B1a，該基板W之外周區域A1a以及外周面A1b係被軟化狀態之熱可塑性樹脂B1a所覆蓋。之後，若是由基板加熱部40所致之加熱被停止，而基板W之外周端部A1之溫度例如成為較150℃而更低，則基板W上之軟化狀態之熱可塑性樹脂B1a係硬化。硬化狀態，係亦可為凝膠狀。完成樹脂塗布之基板W，係藉由具備有機器手等之搬送裝置(未圖示)而被從處理室20搬出，並被搬入至身為與基板處理裝置10相異之個體的蝕刻處理裝置(未圖示)中，並且藉由蝕刻液而被作處理。 在此塗布工程中，從樹脂材B1而軟化了的熱可塑性樹脂B1a係被供給至台30上之基板W之外周區域A1a以及外周面A1b處，在基板W之一周之量的外周區域A1a以及外周面A1b處係被塗布有軟化狀態之熱可塑性樹脂B1a。此時，樹脂材B1係逐漸地減少，樹脂材B1之前端面(圖3以及圖4中之下面)與供給頭61之前端面(圖3以及圖4之下面)之間之垂直分離距離係逐漸變短，但是，就算是塗布結束，供給頭61之前端面也不會從樹脂材B1之前端面而露出(參照圖3以及圖4)。亦即是，樹脂材B1，係如同圖4中所示一般，以就算是在塗布結束後供給頭61之前端面也不會從樹脂材B1之前端面露出的方式，而被形成。 又，供給頭61，係經由身為推壓構件之其中一例的彈簧(未圖示)而被支持於旋轉機構62e處，在使樹脂材B1與基板W之外周區域A1a作接觸時，樹脂材B1係藉由此彈簧而被推壓附著於基板W上。而，係以會使此推壓附著狀態就算是樹脂材B1逐漸地減少也會被維持的方式，來設定供給頭61之下降停止位置。亦即是，當正在對於基板W而塗布樹脂材B1時，供給頭61係相對於基板W之塗布面而並不會在垂直方向上移動。另外，此下降停止位置，係可考慮到所使用的樹脂材B1之種類、台30之旋轉速度、在基板W上所需要的熱可塑性樹脂B1a之膜厚、彈簧長度等，而預先藉由實驗等來求取之。 若是前述之蝕刻處理結束，則完成處理之基板W，係藉由搬送裝置(未圖示)而再度被搬入至處理室20內，並被保持於台30上，之後，供給頭61係從台30上之基板W之外周區域A1a以及外周面A1b而將硬化狀態之熱可塑性樹脂B1a剝離。在此剝離工程中，供給頭61，係藉由頭移動機構62來移動至台30上之基板W處的外周區域A1a之正上方之位置處，並從該正上方之位置起而下降，並且如同圖6中所示一般，使所保持的樹脂材B1之前端部分與被塗布在台30上之基板W處的軟化狀態之熱可塑性樹脂B1a之一部分作接觸並使其附著。另外，台30上之基板W之外周端部A1之溫度，係藉由以基板加熱部40所致之加熱，而例如被設為150℃以上。因此，基板W上之熱可塑性樹脂B1a係軟化。在使樹脂材B1之前端部分附著於軟化狀態之熱可塑性樹脂B1a之一部分處的狀態下，若是由基板加熱部40所致之加熱被停止，而基板W之外周端部A1之溫度例如成為較150℃而更低，則在基板W上而軟化了的熱可塑性樹脂B1a係硬化。藉由此，供給頭61所保持的樹脂材B1之前端部分係固定接著於基板W上之熱可塑性樹脂B1a之一部分處。 接著，供給頭61，係在使樹脂材B1之前端部分固定接著於基板W上之熱可塑性樹脂B1a之一部分處的狀態下，如同圖7中所示一般地，藉由頭移動機構62來從接觸位置起而上升至其之正上方的剝離開始位置處，並從台30上之基板W之外周區域A1a而將硬化狀態之熱可塑性樹脂B1a剝下，並進而如同圖8中所示一般，藉由頭移動機構62來沿著台30上之基板W之被處理面Wa而從剝離開始位置來移動至剝離結束位置(相對於剝離開始位置而以台30之旋轉軸作為中心而成為點對稱的位置)處。在此從剝離開始位置起而至剝離結束位置之移動時，供給頭61，係一面藉由旋轉機構62e來進行旋轉，一面將從台30上之基板W之外周區域A1a所剝下了的硬化狀態之熱可塑性樹脂B1a卷取於樹脂材B1之周圍並作回收。另外，在圖8中，供給頭61之旋轉軸雖係朝向鉛直方向，但是，係亦可將此供給頭61之旋轉軸，從圖7中所示之狀態起來使旋轉機構62c動作並例如朝向台30之旋轉中心方向而作30度之傾斜，並構成為在此狀態下而使供給頭61進行旋轉。於此情況，係成為易於將從基板W而剝下了的熱可塑性樹脂B1a卷取於樹脂材B1之周圍。 於此，熱可塑性樹脂B1a，由於相較於熱硬化性樹脂等之材料，其之相對於基板W之密著度係為低，因此，係能夠並不使基板W破損地而將密著於基板W上並硬化了的熱可塑性樹脂B1a機械性地剝離。另一方面，若是想要將密著於基板W上並硬化了的熱硬化性樹脂機械性地剝離，則基板W係會破損。另外，熱硬化性樹脂，若是一度硬化，則便無法藉由熱來使熱硬化性樹脂軟化，為了將熱硬化性樹脂去除，係需要藉由藥液等來將熱硬化性樹脂溶解。 回到圖1，樹脂洗淨部70，係以不會對於台30之旋轉動作造成妨礙的方式，而被設置在台30之周圍。此樹脂洗淨部70，係如同圖1以及圖9中所示一般，具備有噴嘴71、和支持構件72、以及洗淨槽73。樹脂洗淨部70，係朝向供給頭61所保持的樹脂材B1而從噴嘴71來吐出洗淨液，並將樹脂材B1及其周圍之熱可塑性樹脂B1a(被卷取於樹脂材B1之周圍的硬化狀態之熱可塑性樹脂B1a)洗淨。噴嘴71，係為吐出洗淨液(例如純水)者，並以朝向洗淨槽73內而吐出洗淨液的方式，來藉由支持構件72而被作支持。支持構件72，係被設置於洗淨槽73處，並以能夠使噴嘴71朝向洗淨槽73內而吐出洗淨液的方式，來支持噴嘴71。洗淨槽73，係承受從噴嘴71所吐出的洗淨液和從樹脂材B1或其周圍之熱可塑性樹脂B1a所落下的洗淨液並作儲存。 在洗淨工程中，供給頭61，係藉由頭移動機構62來移動至洗淨槽73之正上方之位置處，並從該正上方之位置起，而如同圖9中所示一般地，使樹脂材B1下降至位置於洗淨槽73內之洗淨位置處。在樹脂材B1之下降時或者是下降停止時，旋轉機構62e係使保持樹脂材B1之供給頭61作旋轉。噴嘴71，係吐出洗淨液，並噴灑至進行旋轉之樹脂材B1及其周圍之熱可塑性樹脂B1a上，而將樹脂材B1及其周圍之熱可塑性樹脂B1a洗淨。藉由此，樹脂材B1及其周圍之熱可塑性樹脂B1a係成為清淨。另外，從噴嘴71所吐出的洗淨液和從樹脂材B1或其周圍之熱可塑性樹脂B1a所落下的洗淨液等，係藉由洗淨槽73而被承接並作儲存。又，在樹脂材B1之洗淨時，雖係使供給頭61作了旋轉，但是，若是在被定位於洗淨位置處之樹脂材B1之周圍處配置複數之噴嘴，並構成為從各噴嘴而吐出洗淨液，則在洗淨中係亦可並不使供給頭61旋轉。又，洗淨後之樹脂材B1，係藉由氣體吹附部(未圖示)而被吹附有乾燥空氣或氮氣，並被乾燥。 回到圖1，樹脂成形部80，係以不會對於台30之旋轉動作造成妨礙的方式，而被設置在台30之周圍。此樹脂成形部80，係如同圖1以及圖10～圖12中所示一般，具備有凹部81、和發熱體82。樹脂成形部80，係藉由發熱體82而使凹部81之周邊溫度例如成為150℃以上，並藉由凹部81來接受被保持於供給頭61處的樹脂材B1及其周圍之熱可塑性樹脂B1a，並且使樹脂材B1及其周圍之熱可塑性樹脂B1a軟化，來作為一體而成形為原本之形狀。凹部81，係被設置在樹脂成形部80之上面處，並被形成為使樹脂材B1回復至身為原本之形狀的圓柱形狀之模。發熱體82，係作為加熱樹脂成形部80之加熱部而起作用。作為發熱體82，例如係使用鎳鉻線等之電熱線。發熱體82，係被與控制部90作電性連接，其之驅動係被控制部90所控制。 在成形工程中，供給頭61，係藉由頭移動機構62來移動至樹脂成形部80之正上方之位置處，並從該正上方之位置起，而如同圖10中所示一般地，使熱可塑性樹脂B1a以使被卷繞於周圍之樹脂材B1會位置在凹部81內的方式而一直下降至成形位置處。此時，凹部81之周邊溫度係藉由發熱體82之加熱而例如被設為150℃以上。因此，凹部81內之樹脂材B1及其周圍之熱可塑性樹脂B1a係軟化並成為一體，而如同圖11中所示一般地被恢復為原本之形狀。之後，若是由發熱體82所致之加熱被停止，而凹部81之周邊溫度例如成為較150℃而更低，則軟化狀態之熱可塑性樹脂(B1、B1a)係硬化。在熱可塑性樹脂(B1、B1a)之硬化後，如同圖12中所示一般，供給頭61係藉由頭移動機構62來從成形位置而一直上升至其之正上方之位置處，並從該正上方之位置而避開。另外，若是將凹部81之內面預先進行鏡面加工或者是氟樹脂加工，則在使硬化後之熱可塑性樹脂(B1、B1a)從凹部81而離模的觀點來看係為理想。作為氟樹脂，例如，係使用聚四氟乙烯。 控制部90，係具備有對於各部作集中性控制之微電腦、和將關連於基板處理之基板處理資訊和各種程式等作記憶之記憶部(均未圖示)。此控制部90，係基於基板處理資訊和各種程式，而進行對於由台旋轉機構50所致之台30之旋轉動作、由樹脂供給部60所致之熱可塑性樹脂B1a之供給動作、由樹脂供給部60所致之熱可塑性樹脂B1a之剝離動作、由樹脂洗淨部70所致之熱可塑性樹脂B1a之洗淨動作、由樹脂成形部80所致之熱可塑性樹脂(B1、B1a)之成形動作等的控制(亦包含關連於控制之各種處理)。例如，在加熱控制中，控制部90，係以會使台30上之基板W之溫度成為150℃以上的方式，來對於基板加熱部40作控制，又，係以會使樹脂成形部80之凹部81之周邊溫度成為150℃以上的方式，來對於發熱體82作控制。另外，基板W之厚度，例如係為0.6～0.8mm，基板加熱部40係能夠以數十秒程度之時間來將基板W之外周端部A1之溫度設為150℃以上。 (基板處理工程) 接著，針對前述之基板處理裝置10所進行之基板處理工程之流程作說明。在此基板處理工程中，控制部90係對於各部之動作進行控制。 如同圖13中所示一般，在步驟S1中，係藉由機器手而將未處理之基板W搬入至處理室20內並載置於台30上，該被作了載置的基板W係藉由台30而被作吸附保持。機器手，在基板W之載置後，係從處理室20而避開。另外，在基板W之搬入時，供給頭61係位置於待機位置(從台30之上方而避開並成為能夠進行基板W之搬入或搬出的位置)。 若是前述之機器手從處理室20而避開，則在步驟S2中，藉由樹脂供給部60，熱可塑性樹脂B1a係被塗布在台30上之基板W之外周區域A1a以及外周面A1b處。首先，基板加熱部40係開始基板W之加熱，基板W之外周端部A1之溫度，例如係成為150℃以上。又，台30係藉由台旋轉機構50而開始旋轉，台30之旋轉數係成為特定之旋轉數(例如，10rpm或此以下之值)，供給頭61係藉由頭移動機構62而從待機位置來移動至供給位置處。若是供給頭61到達供給位置處，則供給頭61所保持的樹脂材B1之前端部分係與台30上之基板W之外周區域A1a作接觸(參照圖3)。作了接觸的樹脂材B1之前端部分係被從基板W而來之熱所軟化，軟化了的前端部分之熱可塑性樹脂係以覆蓋基板W之外周區域A1a以及外周面A1b的方式而浸濕並擴廣，並因應於基板W之旋轉，來沿著環狀之外周區域A1a以及外周面A1b而依序附著。而，例如若是在基板W處之樹脂材B1之接觸開始點環繞了1周，則在基板W之外周區域A1a以及外周面A1b之全體處，熱可塑性樹脂B1a係被作塗布(參照圖4以及圖5)，台30上之基板W之外周區域A1a以及外周面A1b係被軟化狀態之熱可塑性樹脂B1a所覆蓋。若是此樹脂塗布結束，則基板加熱部40係停止加熱，台30係停止旋轉，供給頭61係從塗布位置而移動至待機位置處。若是由基板加熱部40所致之加熱被停止，而基板W之外周端部A1之溫度例如成為較150℃而更低，則軟化狀態之熱可塑性樹脂B1a係硬化。另外，由基板加熱部40所致之加熱的停止，係亦可構成為在樹脂材B1從基板W而離開之後再進行。 若是前述之供給頭61回到待機位置處，則在步驟S3中，完成樹脂塗布之基板W，係從台30上藉由前述之機器手(未圖示)而被搬出至處理室20外，並被搬入至蝕刻處理裝置(未圖示)中。之後，藉由蝕刻處理裝置，基板W之被處理面Wa係藉由蝕刻液而被作處理。在蝕刻工程中，蝕刻液係被供給至例如以50rpm而進行旋轉的基板W之被處理面Wa之中央附近處，被作了供給的蝕刻液，係藉由以基板W之旋轉所致之離心力而擴廣至基板W之被處理面Wa之全體。藉由此，在基板W之被處理面Wa上係被形成有蝕刻液之液膜，基板W之被處理面Wa係藉由蝕刻液而被作處理。此時，基板W之被處理面Wa上之熱可塑性樹脂B1a，係作為保護基板W之外周面A1b免於受到蝕刻液之影響的保護材而起作用。蝕刻處理後之基板W，係在蝕刻處理裝置內，依序被進行使用有洗淨液之洗淨處理、由使基板W進行高速旋轉一事所致的乾燥處理。 在步驟S4中，藉由前述之機器手，完成蝕刻處理之基板W係再度被搬入至處理室20內並載置於台30上，該被作了載置的基板W係藉由台30而被作吸附保持。機器手，在基板W之載置後，係從處理室20而避開。另外，在基板W之搬入時，供給頭61係位置於待機位置。 若是前述之機器手從處理室20而避開，則在步驟S5中，硬化狀態之熱可塑性樹脂B1a係被從台30上之基板W之外周區域A1a以及外周面A1b而去除。首先，基板加熱部40係開始基板W之加熱，基板W之外周端部A1之溫度例如係成為150℃以上，基板W上之熱可塑性樹脂B1a係軟化。又，供給頭61，係藉由頭移動機構62來移動至台30上之基板W的外周區域A1a之正上方之位置處，並從該正上方之位置起而下降至接觸位置處(參照圖6)。若是供給頭61到達接觸位置，則樹脂材B1之前端部分係與基板W上之軟化狀態之熱可塑性樹脂B1a之一部分相接觸並附著。在此狀態下，若是基板加熱部40停止加熱，而基板W之外周端部A1之溫度例如成為較150℃而更低，則在基板W上而軟化了的熱可塑性樹脂B1a係硬化，供給頭61所保持的樹脂材B1之前端部分係固定接著於基板W上之熱可塑性樹脂B1a之一部分處。接著，供給頭61，係在使樹脂材B1之前端部分固定接著於基板W上之熱可塑性樹脂B1a之一部分處的狀態下，藉由頭移動機構62來從接觸位置起而一直上升至剝離開始位置處(參照圖7)，並一面藉由旋轉機構62e來作旋轉一面從剝離開始位置來朝向剝離結束位置移動(參照圖8)，並從台30上之基板W之外周區域A1a而將硬化狀態之熱可塑性樹脂B1a剝下。藉由此，硬化狀態之熱可塑性樹脂B1a，係一面被卷取於樹脂材B1之周圍，一面被從基板W之外周區域A1a而去除。若是此樹脂去除結束，則供給頭61係從剝離結束位置而移動至洗淨位置處。 若是前述之供給頭61移動至洗淨位置處，則在步驟S6中，完成樹脂剝離之基板W，係從台30上藉由前述之機器手(未圖示)而被搬出至處理室20外，並為了進行下一工程而被搬送裝置進行搬送。 若是前述之供給頭61到達洗淨位置處，則在步驟S7中，樹脂材B1及其周圍之熱可塑性樹脂B1a係被樹脂洗淨部70所洗淨。若是供給頭61位置於洗淨位置處，則供給頭61所保持的樹脂材B1係位置於洗淨槽73內(參照圖9)。在此狀態下，係從噴嘴71而吐出洗淨液，並噴灑至進行旋轉之樹脂材B1及其周圍之熱可塑性樹脂B1a上。藉由此，樹脂材B1及其周圍之熱可塑性樹脂B1a係成為清淨。從噴嘴71所吐出的洗淨液、從樹脂材B1或其周圍之熱可塑性樹脂B1a所落下的洗淨液等，係藉由洗淨槽73而被承接並作儲存。又，洗淨後之樹脂材B1和其周圍之熱可塑性樹脂B1a，係被吹附有乾燥空氣或氮氣並被乾燥。若是此樹脂洗淨結束，則供給頭61係從洗淨位置而移動至成形位置處。 若是前述之供給頭61到達成形位置處，則在步驟S8中，樹脂材B1及其周圍之熱可塑性樹脂B1a係被樹脂成形部80進行成形。若是供給頭61位置於成形位置處，則供給頭61所保持的樹脂材B1及其周圍之熱可塑性樹脂B1a係位置於凹部81內(參照圖10)。凹部81之周邊溫度係藉由發熱體82之加熱而例如成為150℃以上。因此，凹部81內之樹脂材B1及其周圍之熱可塑性樹脂B1a係軟化並成為一體，並基於凹部81之內面形狀以及內面尺寸而被成形為原本之形狀以及尺寸(參照圖11以及圖12)。之後，若是由發熱體82所致之加熱被停止，而凹部81之周邊溫度例如成為較150℃而更低，則軟化狀態之熱可塑性樹脂(B1、B1a)係硬化。若是此熱可塑性樹脂(B1、B1a)之硬化結束，則供給頭61係從成形位置而移動至待機位置處。 在此種基板處理工程中，樹脂材B1之前端部分係與身為台30上之基板W之外周端部A1之一部分的外周區域A1a作接觸。作了接觸的樹脂材B1之前端部分，係藉由從基板W而來之熱，而在外周區域A1a處軟化，軟化了的前端部分之熱可塑性樹脂係以覆蓋基板W之外周區域A1a以及外周面A1b的方式而浸濕並擴廣，並因應於台30之旋轉，而被塗布在台30上之基板W之外周區域A1a以及外周面A1b上。藉由此，基板W之外周區域A1a以及外周面A1b之全體，係被熱可塑性樹脂B1a所覆蓋。藉由此，在身為後續工程之蝕刻工程中，由於基板W上之熱可塑性樹脂B1a係作為保護基板W之外周面A1b免於受到蝕刻液之影響的保護材而起作用，因此，基板W之外周面A1b被蝕刻液所侵蝕的情形係被作抑制，而能夠對於基板W之直徑變小、亦即是基板尺寸縮小的情形作抑制。其結果，由於係成為就算是在基板W之外周部分處也能夠得到所期望之尺寸的元件晶片，因此係能夠對於元件晶片之損失的發生作抑制。又，係成為能夠進行像是後續工程中之由機器人所致之搬送等的後續工程中之基板搬送，而能夠使良率提升。 又，硬化狀態之熱可塑性樹脂B1a係藉由供給頭61而被剝離並被從基板W而去除。藉由此，相較於以藥液來將硬化狀態之熱可塑性樹脂B1a溶解並從基板W而去除的情況，係能夠以短時間來將硬化狀態之熱可塑性樹脂B1a從基板W而去除，並且也不需要使用藥液，因此係能夠對起因於藥液之廢棄所致的對環境所造成的負擔有所抑制。進而，由於係成為能夠對於熱可塑性樹脂B1a進行再利用，因此，係能夠對成本作抑制，又，係能夠對起因於熱可塑性樹脂B1a之廢棄所致的對環境所造成的負擔有所抑制。另外，熱可塑性樹脂，相較於熱硬化性樹脂，其之相對於基板W之密著度係為低。因此，藉由並非使用熱硬化性樹脂而是使用熱可塑性樹脂，係成為易於將基板W上之硬化狀態之熱可塑性樹脂B1a從基板W而剝離，而能夠並不對於基板W造成損傷地而將硬化狀態之熱可塑性樹脂B1a從基板W去除。在使用有熱硬化性樹脂的情況時，為了並不對於基板W造成損傷地而將硬化狀態之熱硬化性樹脂從基板W去除，係成為需要設置進行由藥液等所致之去除的裝置，並成為導致裝置之複雜化和成本的提升。 又，若依據前述之基板處理工程，則係使身為硬化狀態之熱可塑性樹脂的樹脂材B1與基板W直接作接觸，並藉由以基板加熱部40而被作了加熱的基板W之熱來使其軟化，而將熱可塑性樹脂B1a塗布在基板W處。亦即是，由於樹脂材B1係在基板W上而軟化，因此係能夠使基板W與熱可塑性樹脂B1a之間之密著性提升。又，由於樹脂材B1係在基板W上而軟化，因此係能夠對於熱可塑性樹脂之劣化作抑制，又，係能夠將塗布時間縮短。 又，環狀之基板加熱部40之寬幅(基板W之半徑方向之寬幅)，較理想，係設定為會較前述之塗布寬幅(例如，3～4mm)而更大。由於係成為能夠對於在前述之塗布寬幅內之被處理面Wa處而產生溫度梯度的情形作抑制，因此，係能夠得到基板W與熱可塑性樹脂B1a之間之均一的密著度。 又，係能夠對於使樹脂材B1對於基板W之被處理面Wa作接觸的接觸面積進行調整，亦即是係能夠相對於基板W之被處理面Wa而使樹脂材B1在基板W之半徑方向上作移動並對於樹脂材B1與基板W之被處理面Wa之間的接觸面積作調整。藉由此，係能夠對於在基板W之被處理面Wa上而塗布熱可塑性樹脂B1a的塗布寬幅(基板W之半徑方向之寬幅)作調整。 如同以上所作了說明一般，若依據第1實施形態，則藉由使身為硬化狀態之熱可塑性樹脂的樹脂材B1與基板W之外周端部A1、例如與基板W之外周區域A1a作接觸，並藉由以基板加熱部40而作了加熱的基板W之熱來使其軟化，再將軟化了的熱可塑性樹脂B1a供給至台30上之基板W之外周區域A1a以及外周面A1b處，該基板W之外周區域A1a以及外周面A1b係被軟化狀態之熱可塑性樹脂B1a所覆蓋。之後，軟化狀態之熱可塑性樹脂B1a係硬化，基板W之外周區域A1a以及外周面A1b係被硬化狀態之熱可塑性樹脂B1a所覆蓋。藉由此，在蝕刻工程中，基板W之外周面A1b係被硬化狀態之熱可塑性樹脂B1a所保護，基板W之外周面A1b被蝕刻液所侵蝕的情形係被作抑制，因此係能夠對於基板尺寸的縮小作抑制。 (樹脂塗布之其他例) 將前述之由供給頭61所致之樹脂塗布之例，作為第1例，並作為樹脂塗布之其他例，而針對第2例以及第3例作說明。 作為第2例，如同在圖14中所示一般，供給頭61，係使樹脂材B1與台30上之基板W之外周面A1b作接觸。台30上之基板W係藉由基板加熱部40而被加熱，基板W之溫度，例如係成為150℃以上。因此，與台30上之基板W之外周面A1b作了接觸的樹脂材B1之前端部分(圖14中之右端部分)係軟化。軟化了的樹脂材B1之前端部分之熱可塑性樹脂，係因應於台30之旋轉(1圈旋轉)，來沿著基板W之外周面A1b而依序附著。藉由此，如同圖15中所示一般，在基板W之外周面A1b之全體(全面)處，係被塗布有軟化狀態之熱可塑性樹脂B1a，該基板W之外周面A1b係被軟化狀態之熱可塑性樹脂B1a所覆蓋。若是熱可塑性樹脂B1a被塗布在基板W之外周面A1b之全體(全面)上，則由基板加熱部40所致之加熱係被停止，而基板W之溫度例如成為較150℃而更低，如此一來，軟化狀態之熱可塑性樹脂B1a係硬化。另外，由基板加熱部40所致之加熱的停止，係亦可構成為在樹脂材B1從基板W而離開之後再進行。 作為第3例，供給頭61，係使樹脂材B1與台30上之基板W之外周區域A1a作接觸。此樹脂材B1之直徑(基板W之半徑方向之寬幅)，相較於第1例，係較基板W之外周區域A1a之寬幅(基板W之半徑方向之寬幅)而更窄。台30上之基板W係藉由基板加熱部40而被加熱，基板W之溫度，例如係成為150℃以上。因此，與台30上之基板W之外周區域A1a作了接觸的樹脂材B1之前端部分係軟化。軟化了的樹脂材B1之前端部分之熱可塑性樹脂，係如同圖16中所示一般，以覆蓋基板W之外周區域A1a的方式而浸濕並擴廣，並因應於台30之旋轉(1圈旋轉)，來沿著台30上之基板W之外周區域A1a而依序附著。藉由此，在基板W之外周區域A1a之全體處，係被塗布有軟化狀態之熱可塑性樹脂B1a，該基板W之外周區域A1a係被軟化狀態之熱可塑性樹脂B1a所覆蓋。若是熱可塑性樹脂B1a被塗布在基板W之外周區域A1a之全體處，則由基板加熱部40所致之加熱係被停止，而基板W之溫度例如成為較150℃而更低，如此一來，軟化狀態之熱可塑性樹脂B1a係硬化。另外，由基板加熱部40所致之加熱的停止，係亦可構成為在樹脂材B1從基板W而離開之後再進行。 在前述之第2和第3例中，亦係與前述之第1例相同的，能夠對於基板尺寸之縮小作抑制。另外，在第3例中，基板W之外周面A1b之全面係並未被硬化狀態之熱可塑性樹脂B1a所覆蓋，但是基板W之外周區域A1a之全面係被硬化狀態之熱可塑性樹脂B1a所覆蓋(參照圖16)。在蝕刻工程中，被供給至進行旋轉的基板W之被處理面Wa之中央附近處的蝕刻液，係藉由以基板W之旋轉所致之離心力而擴廣至基板W之被處理面Wa之全體。此作了擴廣的蝕刻液，係起因於由基板W之旋轉所致的離心力而朝向基板W之外飛散，但是，此時，藉由被塗布在基板W之外周區域A1a上的硬化狀態之熱可塑性樹脂B1a，蝕刻液之飛散方向係相對於水平面而偏向至上方。因此，蝕刻液流入至基板W之外周面A1b處的情形係被作抑制。藉由此，與前述之第1例相同的，係能夠對於基板尺寸之縮小作抑制。第3例，較理想，係使用在當基板W之外周面A1b或下面為藉由SiN或SiO2 而作了被膜時的情況中。但是，較理想，為了確實地保護基板W之外周面A1b免於受到蝕刻液之侵蝕，係藉由熱可塑性樹脂B1a來將外周面A1b之全面完全地作覆蓋。又，係亦可構成為對於1枚的基板W，而進行第2例與第3例之雙方。 〈其他實施形態〉 在前述之說明中，雖係針對在將硬化狀態之熱可塑性樹脂B1a剝離時，使供給頭61所保持的樹脂材B1之前端部分與基板W上之軟化狀態之熱可塑性樹脂B1a之一部分作接觸，並在該狀態下使基板W上之軟化狀態之熱可塑性樹脂B1a硬化，而使樹脂材B1之前端部分與基板W上之熱可塑性樹脂B1a之一部分固定接著的情況，來作了例示，但是，係並不被限定於此。例如，係亦可如同圖17中所示一般，在供給頭61處設置發熱體61a，並藉由此發熱體61a來使樹脂材B1之前端部分軟化並與基板W上之硬化狀態之熱可塑性樹脂B1a之一部分作接觸，並在該狀態下使軟化狀態之樹脂材B1之前端部分硬化，而使樹脂材B1之前端部分與基板W上之熱可塑性樹脂B1a之一部分固定接著。另外，發熱體61a，係被設置在供給頭61之前端面處，並作為藉由發熱而使樹脂材B1之一部分軟化的樹脂加熱部而起作用。作為此發熱體61a，例如係使用鎳鉻線等之電熱線。發熱體61a，係被與控制部90作電性連接，其之驅動係被控制部90所控制。另外，供給頭61，係經由彈簧(未圖示)而被支持於旋轉機構62e處，在此點上，係與使用圖1所作了說明的實施形態相同。又，在前述之塗布工程中，如同圖17中所示一般，樹脂材B1係逐漸地減少，樹脂材B1之前端面(圖17中之下面)與發熱體61a之間之垂直分離距離係逐漸變短，但是，就算是塗布結束，發熱體61a也不會從樹脂材B1之前端面而露出，並存在於接近該前端面之位置處(參照圖17之右圖)。亦即是，樹脂材B1，係就算是在塗布結束後發熱體61a也不會從樹脂材B1之前端面露出地而以存在於接近該前端面之位置處的方式而被形成。 又，在前述之說明中，作為發熱體61a或82，雖係針對使用有鎳鉻線等之電熱線的情況來作了例示，但是，係並不被限定於此，例如，係亦可構成為使用有熱板或鞘套加熱器、燈管加熱器、陶瓷加熱器、石英管加熱器等。 又，在前述之說明中，雖係針對在將硬化狀態之熱可塑性樹脂B1a剝離時，使供給頭61一面進行旋轉一面朝向一方向移動並從基板W而將硬化狀態之熱可塑性樹脂B1a剝離的情況，來作了例示，但是，係並不被限定於此，例如，係亦可構成為並不使供給頭61旋轉地而朝向一方向移動並從基板W而將硬化狀態之熱可塑性樹脂B1a剝離，或者是，亦可構成為並不使供給頭61朝向一方向移動地而進行旋轉並從基板W而將硬化狀態之熱可塑性樹脂B1a剝離。 又，在前述之說明中，雖係針對在將硬化狀態之熱可塑性樹脂B1a剝離的情況時，使供給頭61所保持的樹脂材B1之前端部分與基板W上之熱可塑性樹脂B1a作固定接著，並將硬化狀態之熱可塑性樹脂B1a作保持的情況，來作了例示，但是，係並不被限定於此，例如，係亦可構成為替代供給頭61而設置實行剝離之剝離手。作為剝離手，係能夠使用有鉗狀或鑷狀、針狀之手，或者是使用吸引手。鉗狀或鑷狀之手，係將硬化狀態之熱可塑性樹脂B1a的一部分作捏抓並作保持。針狀之手，係突刺進硬化狀態之熱可塑性樹脂B1a的一部分中並作保持。吸引手，係將硬化狀態之熱可塑性樹脂B1a的一部分作吸引並作保持。 又，在前述之說明中，雖係針對在對於樹脂材B1及其周圍之硬化狀態之熱可塑性樹脂B1a作洗淨時，從樹脂洗淨部70之噴嘴71來吐出洗淨液並進行洗淨的情況，來作了例示，但是，係並不被限定於此，例如，係亦可構成為在洗淨槽73中預先儲存洗淨液，並將樹脂材B1浸漬在該洗淨槽73內之洗淨液中，並且亦可構成為在該浸漬狀態下而使供給頭61藉由旋轉機構62e而進行旋轉。 又，在前述之說明中，雖係針對將基板W作吸附並作保持之台30而作了例示，但是，係並不被限定於此，例如，係亦可構成為使用將基板W夾入並作保持之台。於此情況，台係具備有複數之保持構件，並藉由該些之保持構件來將基板W夾入，並保持於水平狀態。各保持構件係相互連動並對於基板W之外周面A1b而從水平方向來分別作抵接，並將基板W夾入。作為保持構件，例如，係使用有具備銷和將該銷作支持之旋轉板等的保持構件。 又，在前述之說明中，雖係針對在對於基板W而塗布熱可塑性樹脂B1a時，藉由供給頭61來對於基板W之外周區域A1a和外周面A1b之全體而供給熱可塑性樹脂B1a的情況，來作了例示，但是，係並不被限定於此，例如，依存於軟化狀態之熱可塑性樹脂B1a之黏度或製品規格(作為其中一例，所要求之品質)等之條件，係亦可構成為並非為全體而是作部分性的供給。 又，在前述之說明中，雖係針對藉由相異之個體的基板處理裝置來實行蝕刻處理的情況，而作了例示，但是，係並不被限定於此，例如，係亦可構成為在處理室20內設置供給噴嘴和杯，並藉由前述之基板處理裝置10來實行對於基板W之被處理面Wa的蝕刻處理。供給噴嘴，係對於台30上之基板W之被處理面Wa而供給蝕刻液。杯，例如，係被形成為上部開口之圓筒狀，並收容台30，並且以內周面來承受從該台30上的基板W之被處理面Wa所飛散出之蝕刻液。另外，係亦可構成為除了蝕刻液以外，亦將洗淨液或超純水等之其他的處理液依序作供給。 又，在前述之說明中，雖係針對藉由蝕刻液來對於基板W之單面(上面)進行處理的情況，而作了例示，但是，係並不被限定於此，例如，係亦可構成為對於基板W之雙面(上面以及下面)進行處理。另外，在藉由前述之基板處理裝置10來對於基板W之雙面進行處理的情況時，係設置對於基板W之上面供給處理液之供給噴嘴、和對於基板W之下面供給處理液之供給噴嘴。 又，在前述之說明中，雖係針對將1個的供給頭61兼用為用以對於基板W塗布熱可塑性樹脂B1a之供給頭和用以將被塗布在基板W上之熱可塑性樹脂B1a從基板W而剝離的供給頭的情況，來作了例示，但是，係亦可分別地作設置。 又，在前述之說明中，雖係針對在基板W上之樹脂材B1之接觸開始點作了1周的環繞的時序處而使供給頭61移動至待機位置處的情況，來作了例示，但是，此朝向待機位置之移動時序，係亦可構成為在上述接觸開始點作了2周以上之環繞移動後的時間點。於此情況，係亦可構成為在每次繞圈時使供給頭61在基板W之半徑方向上而有所偏移。 又，在前述之說明中，雖係針對使台30旋轉相對於台30上之基板W之外周端部A1而使供給頭61進行相對移動的情況，來作了例示，但是，在熱可塑性樹脂B1a之供給中，係只要使台30上之基板W與供給頭61進行相對移動即可。例如，係亦可構成為並不進行台30之旋轉，而相對於台30上之基板W之外周端部A1來使供給頭61移動。另外，作為使基板W以及供給頭61作相對移動之移動機構，除了使台30作旋轉之台旋轉機構50以外，例如，係亦可使用使供給頭61沿著圓環或矩形環等之環或者是沿著直線來移動的移動機構(作為其中一例，例如，將供給頭61作支持並成為能夠使其曲線狀或直線狀地進行滑動移動的導引構件、成為滑動移動之驅動源之馬達等)。 以上，雖係針對本發明之數個實施形態作了說明，但是，此些之實施形態係僅 為作為例子所提示者，而並非為對於發明之範圍作限定。此些之新穎的實施形態，係可藉由其他之各種形態來實施，在不脫離發明之要旨的範圍內，係可進行各種之省略、置換、變更。此些之實施形態或其變形，係亦被包含於發明之範圍或要旨中，並且亦被包含在申請專利範圍中所記載的發明及其均等範圍內。Hereinafter, one of the embodiments will be described with reference to the drawings. (Basic structure) As shown in FIG. 1, the substrate processing apparatus 10 of the first embodiment is provided with a processing chamber 20, a stage 30, a substrate heating section 40, a stage rotating mechanism 50, and a resin supply section 60 , And the resin washing section 70, the resin molding section 80, and the control section 90. The processing chamber 20 is a processing box for processing the substrate W provided with the processed surface Wa. This processing chamber 20 is formed into a box shape, for example, and houses the table 30, a part of the table rotating mechanism 50, the resin supply part 60, the resin cleaning part 70, the resin molding part 80, and the like. As the substrate W, for example, a wafer or a liquid crystal substrate is used. On the upper surface of the aforementioned processing chamber 20, a cleaning unit 21 is provided. This cleaning unit 21, for example, is equipped with a filter such as a HEPA filter and a fan (none of which are shown), and purifies the downward blowing flow from the top surface of the cleaning room where the substrate processing apparatus 10 is installed. It is introduced into the processing chamber 20 to generate an airflow flowing from above to below in the processing chamber 20. The cleaning unit 21 is electrically connected to the control unit 90, and its drive system is controlled by the control unit 90. The table 30 is positioned near the center of the processing chamber 20, and is horizontally installed on the table rotating mechanism 50 so as to be able to rotate in a horizontal plane. This table 30 is, for example, called a turntable (rotating table), and the center of the processed surface Wa of the substrate W is positioned on the rotation axis of the table 30. The stage 30 is for sucking and holding the substrate W placed on it (suction holding). The substrate heating section 40 is formed in a ring shape (for example, a ring shape), and is provided on the upper surface of the table 30 (the surface on which the substrate W is placed). The substrate heating portion 40 is in contact with the outer peripheral end A1 of the lower surface of the substrate W supported by the stage 30 (the substrate W on the stage 30), and heats the substrate W on the stage 30. As the substrate heating section 40, for example, a hot plate, a sheath heater, a lamp tube heater, a ceramic heater, a quartz tube heater, etc. are used. The substrate heating unit 40 is electrically connected to the control unit 90, and its driving system is controlled by the control unit 90. The table rotating mechanism 50 supports the table 30 and is configured to rotate the table 30 in a horizontal plane. For example, the table rotating mechanism 50 is provided with a rotating shaft connected to the center of the table 30, and a motor (both not shown) for rotating the rotating shaft. The table rotating mechanism 50 is driven by a motor to rotate the table 30 via a rotating shaft. The table rotating mechanism 50 is electrically connected to the control unit 90, and its drive system is controlled by the control unit 90. The resin supply unit 60 includes a supply head 61 and a head moving mechanism 62. The resin supply unit 60 moves the supply head 61 by the head moving mechanism 62, and from above the outer peripheral end portion A1 of the substrate W on the table 30, heats the supply head 61 in a hardened state. The resin material B1 of plastic resin is in contact with the outer peripheral end A1 of the substrate W on the stage 30. The supply head 61, as shown in FIG. 2, is a jig for holding the resin material B1 at the front end. The supply head 61 is formed to be able to move in the horizontal, vertical, and oblique directions above or around the table 30 by the head moving mechanism 62, that is, it is formed to be able to move freely in three dimensions. . The supply head 61 is moved by the head moving mechanism 62 and faces the outer peripheral end A1 of the substrate W on the stage 30, and presses the held resin material B1 to the outer periphery of the substrate W on the stage 30 Make contact at the end A1. The resin material B1 is a thermoplastic resin in a hardened state (solid state), for example, the thermoplastic resin is formed into a cylindrical shape (rod shape) and hardened. The diameter of the resin material B1 is, for example, 10 mm. This resin material B1 is formed so as to be attachable and detachable to the supply head 61, so that it can be exchanged. As the thermoplastic resin, for example, PVA (polyvinyl alcohol), EVA (ethylene vinyl acetate copolymer), and urethane resin are used. This thermoplastic resin is poorly soluble in the etching liquid used in the etching process, that is, has resistance, and functions as a protective material that protects the substrate W from the etching liquid. Thermoplastic resin, for example, softens if its temperature becomes 150°C or higher, and hardens if it becomes lower than 150°C. The head movement mechanism 62 is provided with a movable arm 62a, an arm movement mechanism 62b, and a plurality of rotation mechanisms 62c, 62d, and 62e. This head moving mechanism 62 moves the movable arm 62a by the arm moving mechanism 62b, the rotating mechanism 62d, etc., and moves the supply head 61 to a desired position. The movable arm 62a is formed so that it can be bent in the middle by the rotating mechanism 62c. The rotating mechanism 62c is provided with a rotating shaft and a motor (neither shown) extending in the horizontal direction, and functions as a joint. One end of the movable arm 62a is provided at the arm moving mechanism 62b via a rotating mechanism 62d, and the movable arm 62a is formed to be able to rotate with one end as the center of rotation. The rotating mechanism 62d includes a rotating shaft and a motor (neither shown) extending in the horizontal direction, and functions as a joint. In addition, the other end of the movable arm 62a holds the supply head 61 through the rotation mechanism 62e. The rotating mechanism 62e is provided with a rotating shaft and a motor (neither shown) extending in the vertical direction, and functions as a rotating drive unit that rotates the supply head 61. The rotation mechanisms 62c, 62d, and 62e are respectively electrically connected to the control unit 90, and these drive systems are controlled by the control unit 90. The arm moving mechanism 62b supports the movable arm 62a, the rotating mechanism 62d, etc., and swings the movable arm 62a in the horizontal direction. For example, the arm moving mechanism 62b is provided with a pillar supporting the movable arm 62a and the rotating mechanism 62d, a motor that rotates the pillar, and the like (both not shown). The arm moving mechanism 62b is driven by a motor to rotate the pillar and move the movable arm 62a in the horizontal direction. The arm moving mechanism 62b is electrically connected to the control unit 90, and its drive system is controlled by the control unit 90. Here, as shown in FIGS. 3 and 4, the outer peripheral end portion A1 of the substrate W is formed by the outer peripheral area A1a of the upper surface of the substrate W (the processed surface Wa) and the outer peripheral surface of the substrate W (the substrate W The outer peripheral end surface) A1b, and the outer peripheral area A1c of the lower surface of the substrate W are formed. In addition, as shown in FIGS. 3 to 5, on the upper surface of the substrate W, there is an etching target region R1 that is the target of the etching process in the etching process. The etching target area R1 is the area on the upper surface of the substrate W after the outer peripheral area A1a of the upper surface of the substrate W is removed. The area other than the etching target area R1 is a non-etching target area that is not the target of the etching process during the etching process. The etching target area R1 is a circular area (see FIG. 5). The outer peripheral area A1a of the upper surface of the substrate W and the outer peripheral area A1c of the lower surface of the substrate W are respectively formed from the outer periphery of the substrate W toward the inner side (the outer periphery of the substrate W). The center side) is provided with an annular region having a specific width of several mm (for example, 4 mm or less). For example, the aforementioned supply head 61 is moved by the head moving mechanism 62 to a position directly above the outer peripheral area A1a of the substrate W on the stage 30 in the coating process of the thermoplastic resin B1a, and from the front The upper position rises and descends, and as shown in FIG. 3, the resin material B1 is brought into contact with the outer peripheral area A1a of the substrate W on the stage 30. The substrate W on the stage 30 is heated by the substrate heating section 40, and the temperature of the outer peripheral end A1 of the substrate W is, for example, 150°C or higher. Therefore, the front end portion (the lower end portion in FIG. 3) of the resin material B1 that is in contact with the outer peripheral area A1a of the substrate W on the stage 30 is softened. The thermoplastic resin at the front end of the softened resin material B1 is wetted and expanded so as to cover the outer peripheral area A1a and the outer peripheral surface A1b of the substrate W, and moves along the table 30 in response to the rotation of the table 30 The outer peripheral area A1a and the outer peripheral surface A1b of the substrate W are attached in order (refer to FIGS. 4 and 5). As a result, as shown in FIGS. 4 and 5, the entire outer peripheral area A1a and the outer peripheral surface A1b of the substrate W is coated with a softened thermoplastic resin B1a, and the outer peripheral area A1a of the substrate W and The outer peripheral surface A1b is covered with a softened thermoplastic resin B1a. After that, if the heating by the substrate heating portion 40 is stopped and the temperature of the outer peripheral end A1 of the substrate W becomes lower than 150°C, for example, the softened thermoplastic resin B1a on the substrate W is hardened. The hardened state can also be gelatinous. The resin-coated substrate W is transported out of the processing chamber 20 by a transport device (not shown) equipped with a robot, etc., and transported into an etching processing apparatus that is a different entity from the substrate processing apparatus 10 (Not shown), and processed by etching solution. In this coating process, the thermoplastic resin B1a softened from the resin material B1 is supplied to the outer peripheral area A1a and the outer peripheral surface A1b of the substrate W on the table 30, in the outer peripheral area A1a and The outer peripheral surface A1b is coated with a softened thermoplastic resin B1a. At this time, the resin material B1 is gradually reduced, and the vertical separation distance between the front end surface of the resin material B1 (bottom in Figures 3 and 4) and the front end surface of the supply head 61 (bottom in Figures 3 and 4) gradually changes It is short, but even if the coating is completed, the front end surface of the supply head 61 will not be exposed from the front end surface of the resin material B1 (see FIGS. 3 and 4). That is, the resin material B1 is formed as shown in FIG. 4 so that the front end surface of the supply head 61 will not be exposed from the front end surface of the resin material B1 even after the coating is completed. In addition, the supply head 61 is supported by the rotation mechanism 62e via a spring (not shown) which is an example of a pressing member. When the resin material B1 is brought into contact with the outer peripheral area A1a of the substrate W, the resin material B1 is pressed and attached to the substrate W by the spring. However, the lowering stop position of the supply head 61 is set in such a way that this pressing and adhesion state is maintained even if the resin material B1 is gradually reduced. That is, when the resin material B1 is being applied to the substrate W, the supply head 61 does not move in the vertical direction with respect to the application surface of the substrate W. In addition, this lowering stop position can be tested in advance in consideration of the type of resin material B1 used, the rotation speed of the table 30, the film thickness of the thermoplastic resin B1a required on the substrate W, the spring length, etc. Wait for it. If the aforementioned etching process is completed, the completed substrate W is transported into the processing chamber 20 again by a transport device (not shown) and held on the table 30, after which the supply head 61 is removed from the table The outer peripheral area A1a and the outer peripheral surface A1b of the substrate W on the 30 are peeled off from the cured thermoplastic resin B1a. In this peeling process, the supply head 61 is moved by the head moving mechanism 62 to a position directly above the outer peripheral area A1a of the substrate W on the stage 30, and descends from the position directly above, and As shown in FIG. 6, the front end portion of the held resin material B1 is brought into contact with a part of the softened thermoplastic resin B1a at the substrate W coated on the stage 30 and adhered. In addition, the temperature of the outer peripheral end portion A1 of the substrate W on the stage 30 is heated by the substrate heating portion 40, and is set to, for example, 150°C or higher. Therefore, the thermoplastic resin B1a on the substrate W is softened. In the state where the front end portion of the resin material B1 is attached to a part of the softened thermoplastic resin B1a, if the heating by the substrate heating portion 40 is stopped, the temperature of the outer peripheral end portion A1 of the substrate W becomes, for example, higher At 150° C. or lower, the softened thermoplastic resin B1a on the substrate W hardens. With this, the front end portion of the resin material B1 held by the supply head 61 is fixed to a part of the thermoplastic resin B1a attached to the substrate W. Next, the supply head 61 is in a state where the front end portion of the resin material B1 is fixed to a part of the thermoplastic resin B1a attached to the substrate W. As shown in FIG. 7, the head moving mechanism 62 is used to remove The contact position rises to the peeling start position directly above it, and the cured thermoplastic resin B1a is peeled off from the outer peripheral area A1a of the substrate W on the stage 30, and then as shown in FIG. 8, The head moving mechanism 62 moves along the processing surface Wa of the substrate W on the stage 30 from the peeling start position to the peeling end position (with respect to the peeling start position, the rotation axis of the table 30 is centered and becomes point-symmetrical Location). When moving from the peeling start position to the peeling end position, the feed head 61 is rotated by the rotating mechanism 62e, and the hardening that peels off the outer peripheral area A1a of the substrate W on the table 30 The thermoplastic resin B1a in the state is wound around the resin material B1 and recycled. In addition, in FIG. 8, although the rotation axis of the supply head 61 is oriented in the vertical direction, the rotation axis of the supply head 61 can also be operated from the state shown in FIG. The rotation center direction of the table 30 is inclined at 30 degrees, and is configured to rotate the supply head 61 in this state. In this case, the thermoplastic resin B1a peeled from the substrate W is easily wound around the resin material B1. Here, the thermoplastic resin B1a has a lower degree of adhesion to the substrate W than materials such as thermosetting resins. Therefore, it can adhere to the substrate W without damaging the substrate W. The cured thermoplastic resin B1a on the substrate W is mechanically peeled off. On the other hand, if it is intended to mechanically peel off the thermosetting resin that has been hardened and adhered to the substrate W, the substrate W will be damaged. In addition, if the thermosetting resin is cured once, the thermosetting resin cannot be softened by heat. In order to remove the thermosetting resin, it is necessary to dissolve the thermosetting resin with a chemical solution or the like. Returning to FIG. 1, the resin cleaning part 70 is provided around the table 30 in a manner that does not interfere with the rotation of the table 30. This resin cleaning part 70 is generally equipped with a nozzle 71, a supporting member 72, and a cleaning tank 73 as shown in FIGS. 1 and 9. The resin cleaning part 70 spits out the cleaning liquid from the nozzle 71 toward the resin material B1 held by the supply head 61, and dispenses the resin material B1 and the surrounding thermoplastic resin B1a (wrapped around the resin material B1) The hardened thermoplastic resin B1a) cleans it. The nozzle 71 is one that discharges washing liquid (for example, pure water), and is supported by the support member 72 so as to discharge the washing liquid toward the inside of the washing tank 73. The support member 72 is provided in the washing tank 73 and supports the nozzle 71 so that the nozzle 71 can be directed into the washing tank 73 and the washing liquid can be discharged. The washing tank 73 receives and stores the washing liquid discharged from the nozzle 71 and the washing liquid dropped from the resin material B1 or the thermoplastic resin B1a around it. In the cleaning process, the supply head 61 is moved to a position directly above the washing tank 73 by the head moving mechanism 62, and from the position directly above, as shown in FIG. 9, generally, The resin material B1 is lowered to the washing position in the washing tank 73. When the resin material B1 is lowered or when the lowering stops, the rotating mechanism 62e rotates the supply head 61 holding the resin material B1. The nozzle 71 discharges the cleaning liquid and sprays it onto the rotating resin material B1 and the thermoplastic resin B1a around it, so as to clean the resin material B1 and the thermoplastic resin B1a around it. With this, the resin material B1 and the surrounding thermoplastic resin B1a become clean. In addition, the washing liquid discharged from the nozzle 71 and the washing liquid dropped from the resin material B1 or the thermoplastic resin B1a around it are received by the washing tank 73 and stored. In addition, during the cleaning of the resin material B1, although the supply head 61 is rotated, if a plurality of nozzles are arranged around the resin material B1 positioned at the cleaning position, the nozzles When the washing liquid is discharged, the supply head 61 may not be rotated during washing. In addition, the cleaned resin material B1 is blown with dry air or nitrogen by a gas blowing part (not shown), and dried. Returning to FIG. 1, the resin molding part 80 is provided around the table 30 so as not to interfere with the rotation of the table 30. This resin molded part 80 is generally provided with a recessed part 81 and a heating element 82 as shown in FIGS. 1 and 10 to 12. The resin molding part 80 is made by the heating element 82 so that the peripheral temperature of the recess 81 becomes, for example, 150°C or higher, and the recess 81 receives the resin material B1 held at the supply head 61 and the thermoplastic resin B1a around it. , And soften the resin material B1 and the surrounding thermoplastic resin B1a to form the original shape as a whole. The recess 81 is provided on the upper surface of the resin molding part 80, and is formed into a cylindrical mold that restores the resin material B1 to its original shape. The heating element 82 functions as a heating part for heating the resin molded part 80. As the heating element 82, for example, an electric heating wire such as a nickel-chromium wire is used. The heating element 82 is electrically connected to the control unit 90, and its driving system is controlled by the control unit 90. In the forming process, the supply head 61 is moved to a position directly above the resin molding part 80 by the head moving mechanism 62, and from the position directly above, as shown in FIG. The thermoplastic resin B1a is lowered to the molding position so that the position of the resin material B1 wound around will be in the recess 81. At this time, the peripheral temperature of the recessed portion 81 is set to 150°C or higher by heating of the heating element 82, for example. Therefore, the resin material B1 in the recess 81 and the thermoplastic resin B1a around it are softened and integrated, and are restored to the original shape as shown in FIG. 11. After that, if the heating by the heating element 82 is stopped and the peripheral temperature of the recess 81 becomes lower than 150°C, for example, the softened thermoplastic resin (B1, B1a) is hardened. After the thermoplastic resin (B1, B1a) is hardened, as shown in FIG. 12, the supply head 61 is raised from the forming position to the position directly above it by the head moving mechanism 62, and from the Avoid the position directly above. In addition, if the inner surface of the recess 81 is mirror-finished or fluororesin processed in advance, it is preferable to release the cured thermoplastic resin (B1, B1a) from the recess 81 from the perspective of mold. As the fluororesin, for example, polytetrafluoroethylene is used. The control section 90 is provided with a microcomputer for centralized control of each section, and a memory section (none of which is shown) that memorizes substrate processing information and various programs related to substrate processing. The control unit 90 is based on substrate processing information and various programs to perform the rotation of the table 30 by the table rotation mechanism 50, the supply of the thermoplastic resin B1a by the resin supply unit 60, and the resin supply The peeling action of the thermoplastic resin B1a by the part 60, the cleaning action of the thermoplastic resin B1a by the resin cleaning part 70, the forming action of the thermoplastic resin (B1, B1a) by the resin molding part 80 The control (also includes various processes related to control). For example, in heating control, the control section 90 controls the substrate heating section 40 so that the temperature of the substrate W on the stage 30 becomes 150°C or higher, and also controls the substrate heating section 40 The heating element 82 is controlled so that the peripheral temperature of the recess 81 becomes 150°C or higher. In addition, the thickness of the substrate W is, for example, 0.6 to 0.8 mm, and the substrate heating unit 40 can set the temperature of the outer peripheral end A1 of the substrate W to 150° C. or higher in a time of about several tens of seconds. (Substrate Processing Process) Next, the flow of the substrate processing process performed by the aforementioned substrate processing apparatus 10 will be described. In this substrate processing process, the control unit 90 controls the actions of each unit. As shown in FIG. 13, in step S1, the unprocessed substrate W is moved into the processing chamber 20 by a robot and placed on the table 30, and the substrate W that has been placed is borrowed It is adsorbed and held by the stage 30. The robot hand is avoided from the processing chamber 20 after the substrate W is placed. In addition, when the substrate W is carried in, the supply head 61 is positioned at the standby position (a position where it is avoided from above the table 30 and can be carried in or out of the substrate W). If the aforementioned robot is avoided from the processing chamber 20, in step S2, the thermoplastic resin B1a is coated on the outer peripheral area A1a and the outer peripheral surface A1b of the substrate W on the stage 30 by the resin supply unit 60. First, the substrate heating unit 40 starts heating of the substrate W, and the temperature of the outer peripheral end A1 of the substrate W is, for example, 150°C or higher. In addition, the table 30 starts to rotate by the table rotating mechanism 50, the rotation number of the table 30 becomes a specific number of rotations (for example, a value of 10 rpm or less), and the supply head 61 is switched from standby by the head moving mechanism 62 Position to move to the supply position. When the supply head 61 reaches the supply position, the front end portion of the resin material B1 held by the supply head 61 comes into contact with the outer peripheral area A1a of the substrate W on the stage 30 (see FIG. 3). The front end portion of the contacted resin material B1 is softened by heat from the substrate W, and the softened front end portion of the thermoplastic resin is wetted and wetted so as to cover the outer peripheral area A1a and the outer peripheral surface A1b of the substrate W. It expands, and in accordance with the rotation of the substrate W, it adheres sequentially along the annular outer peripheral area A1a and the outer peripheral surface A1b. And, for example, if the contact start point of the resin material B1 at the substrate W is circled for one turn, the thermoplastic resin B1a is coated on the entire outer peripheral area A1a and the outer peripheral surface A1b of the substrate W (see FIG. 4 and Fig. 5), the outer peripheral area A1a and the outer peripheral surface A1b of the substrate W on the stage 30 are covered by the softened thermoplastic resin B1a. When this resin coating is completed, the substrate heating unit 40 stops heating, the table 30 stops rotating, and the supply head 61 moves from the coating position to the standby position. If the heating by the substrate heating portion 40 is stopped, and the temperature of the outer peripheral end A1 of the substrate W becomes lower than 150°C, for example, the softened thermoplastic resin B1a is hardened. In addition, the stopping of the heating by the substrate heating unit 40 may be configured to be performed after the resin material B1 is separated from the substrate W. If the aforementioned supply head 61 returns to the standby position, in step S3, the resin-coated substrate W is transported out of the processing chamber 20 from the table 30 by the aforementioned robot hand (not shown). And was carried into the etching processing equipment (not shown). After that, by the etching processing device, the processed surface Wa of the substrate W is processed by the etching liquid. In the etching process, the etching liquid is supplied to the vicinity of the center of the processed surface Wa of the substrate W rotating at 50 rpm, for example, and the supplied etching liquid is caused by the centrifugal force caused by the rotation of the substrate W It expands to the entire surface Wa of the substrate W to be processed. By this, the liquid film of the etching liquid is formed on the processed surface Wa of the substrate W, and the processed surface Wa of the substrate W is processed by the etching liquid. At this time, the thermoplastic resin B1a on the processed surface Wa of the substrate W functions as a protective material that protects the outer peripheral surface A1b of the substrate W from the etchant. The substrate W after the etching process is sequentially subjected to a cleaning process using a cleaning solution and a drying process caused by the high-speed rotation of the substrate W in the etching processing apparatus. In step S4, by the aforementioned robot hand, the substrate W that has been etched is moved into the processing chamber 20 again and placed on the table 30. The substrate W that has been placed is moved by the table 30. It is held by adsorption. The robot hand is avoided from the processing chamber 20 after the substrate W is placed. In addition, when the substrate W is carried in, the supply head 61 is positioned at the standby position. If the aforementioned robot is evacuated from the processing chamber 20, in step S5, the cured thermoplastic resin B1a is removed from the outer peripheral area A1a and the outer peripheral surface A1b of the substrate W on the table 30. First, the substrate heating unit 40 starts heating of the substrate W, the temperature of the outer peripheral end A1 of the substrate W becomes, for example, 150° C. or higher, and the thermoplastic resin B1a on the substrate W is softened. In addition, the supply head 61 is moved by the head moving mechanism 62 to a position directly above the outer peripheral area A1a of the substrate W on the stage 30, and is lowered from the position directly above to the contact position (refer to FIG. 6). If the supply head 61 reaches the contact position, the front end portion of the resin material B1 contacts and adheres to a part of the softened thermoplastic resin B1a on the substrate W. In this state, if the substrate heating portion 40 stops heating and the temperature of the outer peripheral end A1 of the substrate W becomes lower than 150°C, for example, the thermoplastic resin B1a that has been softened on the substrate W is cured and supplied to the head The front end of the resin material B1 held by 61 is fixed to a part of the thermoplastic resin B1a on the substrate W. Next, the supply head 61 is in a state where the front end of the resin material B1 is fixed to a part of the thermoplastic resin B1a on the substrate W, and the head moving mechanism 62 rises from the contact position until the peeling starts. Position (refer to FIG. 7), while being rotated by the rotating mechanism 62e, it moves from the peeling start position to the peeling end position (refer to FIG. 8), and hardens from the outer peripheral area A1a of the substrate W on the table 30 The thermoplastic resin B1a in the state is peeled off. By this, the thermoplastic resin B1a in the hardened state is wound around the resin material B1 while being removed from the outer peripheral area A1a of the substrate W. When this resin removal is completed, the supply head 61 moves from the peeling end position to the cleaning position. If the aforementioned supply head 61 is moved to the cleaning position, in step S6, the resin stripped substrate W is carried out from the table 30 by the aforementioned robot (not shown) to the outside of the processing chamber 20 , And is transported by the transport device for the next process. If the aforementioned supply head 61 reaches the cleaning position, the resin material B1 and the thermoplastic resin B1a around it are cleaned by the resin cleaning part 70 in step S7. If the supply head 61 is located at the washing position, the resin material B1 held by the supply head 61 is located in the washing tank 73 (see FIG. 9). In this state, the cleaning liquid is discharged from the nozzle 71 and sprayed onto the rotating resin material B1 and the thermoplastic resin B1a around it. With this, the resin material B1 and the surrounding thermoplastic resin B1a become clean. The washing liquid discharged from the nozzle 71, the washing liquid dropped from the resin material B1 or the thermoplastic resin B1a around it, and the like are received by the washing tank 73 and stored. In addition, the cleaned resin material B1 and the surrounding thermoplastic resin B1a are blown with dry air or nitrogen and dried. When this resin washing is completed, the supply head 61 moves from the washing position to the molding position. If the aforementioned supply head 61 reaches the molding position, the resin material B1 and the surrounding thermoplastic resin B1a are molded by the resin molding part 80 in step S8. If the supply head 61 is positioned at the molding position, the resin material B1 held by the supply head 61 and the surrounding thermoplastic resin B1a are positioned in the recess 81 (see FIG. 10). The peripheral temperature of the recessed portion 81 is heated by the heating element 82 to become, for example, 150° C. or higher. Therefore, the resin material B1 in the recessed portion 81 and the thermoplastic resin B1a around it are softened and integrated, and are molded into the original shape and size based on the inner surface shape and inner surface size of the recessed portion 81 (refer to FIG. 11 and FIG. 12). After that, if the heating by the heating element 82 is stopped and the peripheral temperature of the recess 81 becomes lower than 150°C, for example, the softened thermoplastic resin (B1, B1a) is hardened. When the curing of the thermoplastic resin (B1, B1a) is completed, the supply head 61 moves from the molding position to the standby position. In this substrate processing process, the front end of the resin material B1 is in contact with the outer peripheral area A1a which is a part of the outer peripheral end A1 of the substrate W on the table 30. The front end portion of the resin material B1 that is in contact is softened at the outer peripheral area A1a by the heat from the substrate W, and the thermoplastic resin at the softened end portion covers the outer peripheral area A1a and the outer periphery of the substrate W The surface A1b is wetted and expanded, and in response to the rotation of the table 30, it is coated on the outer peripheral area A1a and the outer peripheral surface A1b of the substrate W on the table 30. With this, the entire outer peripheral area A1a and the outer peripheral surface A1b of the substrate W are covered with the thermoplastic resin B1a. As a result, in the etching process, which is a subsequent process, the thermoplastic resin B1a on the substrate W functions as a protective material that protects the outer peripheral surface A1b of the substrate W from the etching liquid. Therefore, the substrate W The erosion of the outer peripheral surface A1b by the etchant is suppressed, and the reduction in the diameter of the substrate W, that is, the reduction in the size of the substrate, can be suppressed. As a result, it is possible to obtain an element wafer of a desired size even in the outer peripheral portion of the substrate W, and therefore, it is possible to suppress the occurrence of the loss of the element wafer. In addition, it becomes possible to carry out the substrate transfer in the subsequent process such as the transfer by the robot in the subsequent process, and the yield can be improved. In addition, the cured thermoplastic resin B1a is peeled off by the supply head 61 and removed from the substrate W. By this, compared to the case where the cured thermoplastic resin B1a is dissolved and removed from the substrate W with a chemical solution, the cured thermoplastic resin B1a can be removed from the substrate W in a short time, and There is also no need to use liquid medicine, so the burden on the environment caused by the disposal of liquid medicine can be suppressed. Furthermore, since the thermoplastic resin B1a can be reused, the cost can be suppressed, and the burden on the environment due to the discarding of the thermoplastic resin B1a can be suppressed. In addition, compared with thermosetting resin, the degree of adhesion of thermoplastic resin to the substrate W is lower. Therefore, by using thermoplastic resin instead of thermosetting resin, the cured thermoplastic resin B1a on the substrate W can be easily peeled from the substrate W, and the substrate W can be removed without causing damage to the substrate W. The thermoplastic resin B1a in the hardened state is removed from the substrate W. When a thermosetting resin is used, in order to remove the thermosetting resin in the hardened state from the substrate W without causing damage to the substrate W, it is necessary to install a device for removal by a chemical solution or the like. And it leads to the complexity of the device and the increase in cost. In addition, according to the aforementioned substrate processing process, the resin material B1, which is a thermoplastic resin in a hardened state, is brought into direct contact with the substrate W, and the substrate W is heated by the substrate heating unit 40. To soften it, the thermoplastic resin B1a is applied to the substrate W. That is, since the resin material B1 is softened on the substrate W, the adhesion between the substrate W and the thermoplastic resin B1a can be improved. In addition, since the resin material B1 is softened on the substrate W, the deterioration of the thermoplastic resin can be suppressed, and the coating time can be shortened. In addition, the width of the ring-shaped substrate heating portion 40 (the width of the substrate W in the radial direction) is preferably set to be larger than the aforementioned coating width (for example, 3 to 4 mm). Since it is possible to suppress the occurrence of a temperature gradient on the processed surface Wa within the aforementioned coating width, it is possible to obtain a uniform degree of adhesion between the substrate W and the thermoplastic resin B1a. In addition, it is possible to adjust the contact area of the resin material B1 to the processed surface Wa of the substrate W, that is, the resin material B1 can be in the radial direction of the substrate W with respect to the processed surface Wa of the substrate W. The upper part moves and adjusts the contact area between the resin material B1 and the processed surface Wa of the substrate W. By this, it is possible to adjust the coating width (width in the radial direction of the substrate W) for coating the thermoplastic resin B1a on the surface Wa of the substrate W to be processed. As described above, according to the first embodiment, the resin material B1 of the thermoplastic resin in a cured state is brought into contact with the outer peripheral end portion A1 of the substrate W, for example, the outer peripheral area A1a of the substrate W, The substrate W is heated by the substrate heating section 40 to soften it, and then the softened thermoplastic resin B1a is supplied to the outer peripheral area A1a and the outer peripheral surface A1b of the substrate W on the stage 30. The outer peripheral area A1a and the outer peripheral surface A1b of the substrate W are covered with the softened thermoplastic resin B1a. After that, the softened thermoplastic resin B1a is cured, and the outer peripheral area A1a and the outer peripheral surface A1b of the substrate W are covered with the cured thermoplastic resin B1a. As a result, during the etching process, the outer peripheral surface A1b of the substrate W is protected by the cured thermoplastic resin B1a, and the erosion of the outer peripheral surface A1b of the substrate W by the etching solution is suppressed. The size reduction is suppressed. (Other Examples of Resin Coating) The aforementioned example of resin coating by the supply head 61 is taken as the first example, and as another example of resin coating, the second and third examples will be described. As a second example, as shown in FIG. 14, the supply head 61 brings the resin material B1 into contact with the outer peripheral surface A1b of the substrate W on the stage 30. The substrate W on the stage 30 is heated by the substrate heating unit 40, and the temperature of the substrate W is, for example, 150°C or higher. Therefore, the front end portion of the resin material B1 (the right end portion in FIG. 14) that is in contact with the outer peripheral surface A1b of the substrate W on the stage 30 is softened. The thermoplastic resin at the front end of the softened resin material B1 is sequentially attached along the outer peripheral surface A1b of the substrate W in response to the rotation of the table 30 (one rotation). As a result, as shown in FIG. 15, the entire (full surface) of the outer peripheral surface A1b of the substrate W is coated with a softened thermoplastic resin B1a, and the outer peripheral surface A1b of the substrate W is in a softened state. Covered with thermoplastic resin B1a. If the thermoplastic resin B1a is applied to the entire outer peripheral surface A1b of the substrate W (full surface), the heating by the substrate heating portion 40 is stopped, and the temperature of the substrate W becomes lower than 150°C, for example. As a result, the softened thermoplastic resin B1a hardens. In addition, the stopping of the heating by the substrate heating unit 40 may be configured to be performed after the resin material B1 is separated from the substrate W. As a third example, the supply head 61 brings the resin material B1 into contact with the outer peripheral area A1a of the substrate W on the stage 30. The diameter of the resin material B1 (the width of the substrate W in the radial direction) is narrower than the width of the outer peripheral area A1a of the substrate W (the width of the substrate W in the radial direction) compared to the first example. The substrate W on the stage 30 is heated by the substrate heating unit 40, and the temperature of the substrate W is, for example, 150°C or higher. Therefore, the front end portion of the resin material B1 that is in contact with the outer peripheral area A1a of the substrate W on the stage 30 is softened. The thermoplastic resin at the front end of the softened resin material B1 is as shown in FIG. 16, soaking and expanding the outer peripheral area A1a of the substrate W, and responds to the rotation of the table 30 (1 turn Rotate), to follow the outer peripheral area A1a of the substrate W on the stage 30 and sequentially adhere. By this, the entire outer peripheral area A1a of the substrate W is coated with the softened thermoplastic resin B1a, and the outer peripheral area A1a of the substrate W is covered with the softened thermoplastic resin B1a. If the thermoplastic resin B1a is applied to the entire outer peripheral area A1a of the substrate W, the heating by the substrate heating portion 40 is stopped, and the temperature of the substrate W becomes, for example, lower than 150°C. As a result, The softened thermoplastic resin B1a is hardened. In addition, the stopping of the heating by the substrate heating unit 40 may be configured to be performed after the resin material B1 is separated from the substrate W. In the foregoing second and third examples, the same as the foregoing first example can suppress the reduction in the size of the substrate. In addition, in the third example, the entire outer peripheral surface A1b of the substrate W is not covered by the cured thermoplastic resin B1a, but the entire outer peripheral area A1a of the substrate W is covered by the cured thermoplastic resin B1a (Refer to Figure 16). In the etching process, the etching liquid supplied to the vicinity of the center of the processed surface Wa of the rotating substrate W is expanded to the processed surface Wa of the substrate W by the centrifugal force caused by the rotation of the substrate W All. This expanded etching solution is caused by the centrifugal force caused by the rotation of the substrate W to scatter away from the substrate W. However, at this time, the hardened state is applied to the outer peripheral area A1a of the substrate W. For the thermoplastic resin B1a, the scattering direction of the etching solution is deviated upward with respect to the horizontal plane. Therefore, the inflow of the etching liquid to the outer peripheral surface A1b of the substrate W is suppressed. By this, as in the first example described above, it is possible to suppress the reduction in the size of the substrate. The third example is preferably used when the outer peripheral surface A1b or the lower surface of the substrate W is coated with SiN or SiO 2 . However, preferably, in order to reliably protect the outer peripheral surface A1b of the substrate W from etching liquid, the entire outer peripheral surface A1b is completely covered by the thermoplastic resin B1a. In addition, it may be configured to perform both the second example and the third example for one substrate W. <Other Embodiments> In the foregoing description, when the cured thermoplastic resin B1a is peeled off, the front end portion of the resin material B1 held by the supply head 61 and the softened thermoplastic resin on the substrate W When a part of B1a is in contact, and in this state, the softened thermoplastic resin B1a on the substrate W is hardened, and the front end of the resin material B1 is fixed to a part of the thermoplastic resin B1a on the substrate W. An example is given, but the system is not limited to this. For example, as shown in FIG. 17, a heating element 61a may be provided at the supply head 61, and by this heating element 61a, the front end portion of the resin material B1 is softened and is compatible with the hardened state of the substrate W. A part of the resin B1a is brought into contact, and in this state, the front end part of the resin material B1 in a softened state is hardened, so that the front end part of the resin material B1 is fixedly connected to a part of the thermoplastic resin B1a on the substrate W. In addition, the heating element 61a is provided at the front end surface of the supply head 61, and functions as a resin heating portion that softens a part of the resin material B1 by heat. As the heating element 61a, for example, an electric heating wire such as a nickel-chromium wire is used. The heating element 61 a is electrically connected to the control unit 90, and its driving system is controlled by the control unit 90. In addition, the supply head 61 is supported by the rotation mechanism 62e via a spring (not shown). In this point, it is the same as the embodiment described using FIG. 1. In addition, in the aforementioned coating process, as shown in FIG. 17, the resin material B1 gradually decreases, and the vertical separation distance between the front end surface of the resin material B1 (lower surface in FIG. 17) and the heating element 61a gradually changes It is short, but even if the application is completed, the heating element 61a will not be exposed from the front end surface of the resin material B1, and is present at a position close to the front end surface (refer to the right drawing in FIG. 17). That is, the resin material B1 is formed so that the heating element 61a will not be exposed from the front end surface of the resin material B1 even after the application is completed, but is formed at a position close to the front end surface. In the foregoing description, although the heating element 61a or 82 is exemplified in the case of using a heating wire such as a nickel-chromium wire, it is not limited to this. For example, it may be configured For the use of hot plate or sheath heater, lamp heater, ceramic heater, quartz tube heater, etc. In addition, in the foregoing description, when the cured thermoplastic resin B1a is peeled off, the supply head 61 is rotated while moving in one direction to peel off the cured thermoplastic resin B1a from the substrate W. The case is exemplified, but the system is not limited to this. For example, the system may also be configured to move in one direction without rotating the supply head 61 and to remove the hardened thermoplastic resin B1a from the substrate W. Alternatively, it may be configured such that the supply head 61 is rotated without moving in one direction, and the cured thermoplastic resin B1a is peeled from the substrate W. In addition, in the foregoing description, when the cured thermoplastic resin B1a is peeled off, the front end portion of the resin material B1 held by the supply head 61 is fixed to the thermoplastic resin B1a on the substrate W. The case where the thermoplastic resin B1a in the hardened state is retained has been exemplified, but the system is not limited to this. For example, the supply head 61 may be replaced with a peeling hand that performs peeling. As the peeling hand, it is possible to use a pliers, forceps, or needle-shaped hand, or use a suction hand. The pincer-like or forceps-like hand is used to pinch and hold part of the hardened thermoplastic resin B1a. The needle-shaped hand is inserted into a part of the hardened thermoplastic resin B1a and held. To attract the hand is to attract and hold a part of the thermoplastic resin B1a in the hardened state. In addition, in the foregoing description, when cleaning the cured thermoplastic resin B1a of the resin material B1 and its surroundings, the cleaning solution is discharged from the nozzle 71 of the resin cleaning part 70 to perform cleaning. The case of is exemplified, but the system is not limited to this. For example, the system may be configured such that the cleaning solution is stored in the cleaning tank 73 in advance, and the resin material B1 is immersed in the cleaning tank 73 In the washing liquid, the supply head 61 may be rotated by the rotation mechanism 62e in this immersed state. In addition, in the foregoing description, although the table 30 for sucking and holding the substrate W has been exemplified, the system is not limited to this. For example, it may be configured to sandwich the substrate W And as a stand for keeping. In this case, the stage system is provided with a plurality of holding members, and the substrate W is sandwiched by the holding members and held in a horizontal state. The respective holding members move in conjunction with each other and respectively contact the outer peripheral surface A1b of the substrate W from the horizontal direction, and sandwich the substrate W. As the holding member, for example, a holding member provided with a pin and a rotating plate supporting the pin is used. In addition, in the foregoing description, when the thermoplastic resin B1a is applied to the substrate W, the supply head 61 supplies the thermoplastic resin B1a to the entire outer peripheral area A1a and the outer peripheral surface A1b of the substrate W. , As an example, but the system is not limited to this, for example, depending on the softened state of the thermoplastic resin B1a viscosity or product specifications (for example, the required quality) and other conditions, can also be configured For not for the whole but for partial supply. In addition, in the foregoing description, although the case where the etching process is performed by a different individual substrate processing apparatus is exemplified, the system is not limited to this, for example, it may be configured as A supply nozzle and a cup are installed in the processing chamber 20, and the substrate processing apparatus 10 described above performs etching processing on the processed surface Wa of the substrate W. The supply nozzle supplies the etching liquid to the processed surface Wa of the substrate W on the stage 30. The cup, for example, is formed into a cylindrical shape with an upper opening, and accommodates the table 30, and receives the etching liquid scattered from the processed surface Wa of the substrate W on the table 30 with its inner peripheral surface. In addition, it can also be configured to sequentially supply other processing liquids such as a cleaning liquid or ultrapure water in addition to the etching liquid. In addition, in the foregoing description, although the case where the single side (upper surface) of the substrate W is processed by the etching solution is exemplified, the system is not limited to this, for example, it may be It is configured to process both sides (top and bottom) of the substrate W. In addition, when processing both sides of the substrate W by the aforementioned substrate processing apparatus 10, a supply nozzle for supplying processing liquid to the upper surface of the substrate W and a supply nozzle for supplying processing liquid to the lower surface of the substrate W are provided . In addition, in the foregoing description, although one supply head 61 is used as a supply head for applying the thermoplastic resin B1a to the substrate W, and for removing the thermoplastic resin B1a applied on the substrate W from the substrate The case where the supply head is peeled off has been exemplified, but it can also be installed separately. In addition, in the foregoing description, the case where the supply head 61 is moved to the standby position is exemplified when the contact start point of the resin material B1 on the substrate W is made one round at the time sequence. However, the timing of this movement toward the standby position may also be configured as the time point after the above-mentioned contact start point has been moved around for more than 2 weeks. In this case, it may be configured to shift the supply head 61 in the radial direction of the substrate W every time it turns. In addition, in the foregoing description, the case where the supply head 61 is relatively moved by rotating the table 30 with respect to the outer peripheral end A1 of the substrate W on the table 30 has been exemplified, but the thermoplastic resin In the supply of B1a, the substrate W on the stage 30 and the supply head 61 may be relatively moved. For example, it may be configured such that the supply head 61 is moved relative to the outer peripheral end A1 of the substrate W on the table 30 without rotating the table 30. In addition, as a moving mechanism for relatively moving the substrate W and the supply head 61, in addition to the table rotation mechanism 50 that rotates the table 30, for example, a ring that makes the supply head 61 follow a circular ring or a rectangular ring may be used. Or it is a moving mechanism that moves along a straight line (as an example, for example, the supply head 61 is supported and used as a guide member that can slide it in a curved or linear manner, and a motor that becomes the driving source of the sliding movement. Wait). Although several embodiments of the present invention have been described above, these embodiments are merely presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments or their modifications are also included in the scope or gist of the invention, and are also included in the invention described in the patent application and its equivalent scope.

10:基板處理裝置 30:台 40:基板加熱部 61:供給頭 70:樹脂洗淨部 80:樹脂成形部 A1:基板之外周端部 A1a:基板之上面之外周區域 A1b:基板之外周面 B1:樹脂材 B1a:熱可塑性樹脂 W:基板10: Substrate processing equipment 30: Taiwan 40: Substrate heating section 61: supply head 70: Resin cleaning department 80: Resin molding department A1: The outer peripheral edge of the substrate A1a: The outer peripheral area of the substrate A1b: The outer peripheral surface of the substrate B1: Resin material B1a: Thermoplastic resin W: substrate

[圖1]係為對於其中一個實施形態的基板處理裝置之概略構成作展示之圖。 [圖2]係為用以對於其中一個實施形態之樹脂塗布的第1例作說明之第1圖。 [圖3]係為用以對於其中一個實施形態之樹脂塗布的第1例作說明之第2圖。 [圖4]係為用以對於其中一個實施形態之樹脂塗布的第1例作說明之第3圖。 [圖5]係為對於藉由其中一個實施形態之樹脂塗布的第1例而被塗布有樹脂的基板作展示之平面圖。 [圖6]係為用以對於其中一個實施形態之樹脂剝離的其中一例作說明之第1圖。 [圖7]係為用以對於其中一個實施形態之樹脂剝離的其中一例作說明之第2圖。 [圖8]係為用以對於其中一個實施形態之樹脂剝離的其中一例作說明之第3圖。 [圖9]係為用以對於其中一個實施形態之樹脂洗淨的其中一例作說明之圖。 [圖10]係為用以對於其中一個實施形態之樹脂成形的其中一例作說明之第1圖。 [圖11]係為用以對於其中一個實施形態之樹脂成形的其中一例作說明之第2圖。 [圖12]係為用以對於其中一個實施形態之樹脂成形的其中一例作說明之第3圖。 [圖13]係為對於其中一個實施形態的基板處理工程之流程作展示之流程圖。 [圖14]係為用以對於其中一個實施形態之樹脂塗布的第2例作說明之第1圖。 [圖15]係為用以對於其中一個實施形態之樹脂塗布的第2例作說明之第2圖。 [圖16]係為用以對於其中一個實施形態之樹脂塗布的第3例作說明之圖。 [圖17]係為用以對於其中一個實施形態之供給頭的變形例作說明之圖。[Fig. 1] is a diagram showing the schematic configuration of a substrate processing apparatus of one embodiment. [Fig. 2] is a first diagram for explaining the first example of resin coating in one of the embodiments. Fig. 3 is a second diagram for explaining the first example of resin coating in one of the embodiments. Fig. 4 is a third diagram for explaining the first example of resin coating in one of the embodiments. Fig. 5 is a plan view showing a substrate coated with resin by the first example of resin coating of one of the embodiments. [Fig. 6] is the first diagram for explaining one example of resin peeling in one embodiment. Fig. 7 is a second diagram for explaining one example of resin peeling in one embodiment. Fig. 8 is a third diagram for explaining one example of resin peeling in one embodiment. [Fig. 9] is a diagram for explaining one example of resin cleaning in one embodiment. [Fig. 10] is a first diagram for explaining one example of resin molding of one embodiment. [Fig. 11] is a second diagram for explaining one example of resin molding of one embodiment. [Fig. 12] is a third diagram for explaining one example of resin molding of one embodiment. [Figure 13] is a flow chart showing the flow of the substrate processing process in one of the embodiments. Fig. 14 is a first diagram for explaining the second example of resin coating in one of the embodiments. Fig. 15 is a second diagram for explaining the second example of resin coating in one of the embodiments. [Fig. 16] is a diagram for explaining the third example of resin coating in one of the embodiments. [Fig. 17] is a diagram for explaining a modification of the supply head in one of the embodiments.

10:基板處理裝置 10: Substrate processing equipment

20:處理室 20: Processing room

21:清淨單元 21: Cleaning unit

30:台 30: Taiwan

40:基板加熱部 40: Substrate heating section

50:台旋轉機構 50: Rotating mechanism

60:樹脂供給部 60: Resin Supply Department

61:供給頭 61: supply head

62:頭移動機構 62: head moving mechanism

62a:可動臂 62a: movable arm

62b:臂移動機構 62b: Arm moving mechanism

62c,62d,62e:旋轉機構 62c, 62d, 62e: rotating mechanism

70:樹脂洗淨部 70: Resin cleaning department

71:噴嘴 71: Nozzle

72:支持構件 72: support member

73:洗淨槽 73: washing tank

80:樹脂成形部 80: Resin molding department

81:凹部 81: recess

82:發熱體 82: heating element

90:控制部 90: Control Department

A1:基板之外周端部 A1: The outer peripheral edge of the substrate

B1:樹脂材 B1: Resin material

W:基板 W: substrate

Wa:被處理面 Wa: processed surface

Claims (18)

一種基板處理裝置，係具備有： 台，係支持成為蝕刻對象之基板；和 基板加熱部，係將藉由前述台而被作了支持的前述基板加熱；和 供給頭，係保持硬化狀態之熱可塑性樹脂，並使所保持了的前述熱可塑性樹脂，與藉由前述台而被作支持並且藉由前述基板加熱部而被作了加熱的前述基板之外周端部作接觸，來使軟化了的前述熱可塑性樹脂附著於前述基板而作供給，並且相對於前述基板而進行相對移動。A substrate processing device is provided with: The stage is to support the substrate that becomes the etching target; and The substrate heating section heats the substrate supported by the stage; and The supply head is a thermoplastic resin that is maintained in a hardened state, and the retained thermoplastic resin is supported by the stage and heated by the substrate heating portion at the outer peripheral end of the substrate The part makes contact to allow the softened thermoplastic resin to adhere to the substrate for supply, and to move relative to the substrate. 如請求項1所記載之基板處理裝置，其中， 前述基板加熱部，係被形成為環狀，並對藉由前述台而被作了支持的前述基板之外周端部進行加熱。The substrate processing apparatus described in claim 1, wherein: The substrate heating part is formed in a ring shape and heats the outer peripheral end of the substrate supported by the stage. 如請求項1或2所記載之基板處理裝置，其中， 前述供給頭，係對於藉由前述台而被作支持的前述基板之外周面、以及藉由前述台而被作支持的前述基板之上面的外周區域，此些之其中一方或者是雙方，而使所保持了的硬化狀態之前述熱可塑性樹脂作接觸。The substrate processing apparatus described in claim 1 or 2, wherein: The supply head is for the outer peripheral surface of the substrate supported by the stage and the outer peripheral area on the upper surface of the substrate supported by the stage, one or both of these The above-mentioned thermoplastic resin in the maintained hardened state makes contact. 如請求項1所記載之基板處理裝置，其中， 前述供給頭，係將被供給至了前述基板處的前述熱可塑性樹脂從前述基板而剝離。The substrate processing apparatus described in claim 1, wherein: The supply head peels off the thermoplastic resin supplied to the substrate from the substrate. 如請求項4所記載之基板處理裝置，其中， 前述供給頭，係使所保持了的硬化狀態之前述熱可塑性樹脂附著於被供給至了前述基板處的前述熱可塑性樹脂之一部分處並移動，而將被供給至了前述基板處的前述熱可塑性樹脂從前述基板而剝離。The substrate processing apparatus described in claim 4, wherein: The supply head causes the thermoplastic resin in the maintained hardened state to adhere to and move a part of the thermoplastic resin supplied to the substrate, so that the thermoplastic resin supplied to the substrate is moved. The resin is peeled from the aforementioned substrate. 如請求項4所記載之基板處理裝置，其中， 前述供給頭，係使所保持了的硬化狀態之前述熱可塑性樹脂附著於被供給至前述基板處的前述熱可塑性樹脂之一部分處並旋轉，而將被供給至了前述基板處的前述熱可塑性樹脂從前述基板而剝離。The substrate processing apparatus described in claim 4, wherein: The supply head causes the thermoplastic resin in the maintained hardened state to adhere to a part of the thermoplastic resin supplied to the substrate and rotate, so as to transfer the thermoplastic resin supplied to the substrate. It is peeled from the aforementioned substrate. 如請求項1所記載之基板處理裝置，其中， 係具備有將被供給至了前述基板處的前述熱可塑性樹脂從前述基板而剝離之剝離手。The substrate processing apparatus described in claim 1, wherein: It is equipped with the peeling hand which peels the said thermoplastic resin supplied to the said board|substrate from the said board|substrate. 如請求項4～請求項7中之任一項所記載之基板處理裝置，其中，係具備有： 樹脂成形部，係將被從前述基板而剝離了的前述熱可塑性樹脂加熱並成形。The substrate processing apparatus described in any one of claim 4 to claim 7, wherein: The resin molding part heats and molds the thermoplastic resin peeled from the substrate. 如請求項8所記載之基板處理裝置，其中，係具備有： 樹脂洗淨部，係將被從前述基板而剝離了的前述熱可塑性樹脂，在藉由前述樹脂成形部而成形之前進行洗淨。The substrate processing apparatus described in claim 8, wherein: The resin washing part is to wash the thermoplastic resin peeled from the substrate before being molded by the resin molding part. 一種基板處理方法，係具備有： 藉由台來支持成為蝕刻對象之基板之工程；和 將藉由前述台而被作了支持的前述基板，藉由基板加熱部而加熱之工程；和 對於藉由前述台而被作支持並且藉由前述基板加熱部而被作了加熱的前述基板之外周端部，而將硬化狀態之熱可塑性樹脂藉由供給頭來作保持並使其作接觸，來使軟化了的前述熱可塑性樹脂附著於前述基板而作供給，並且相對於前述基板而使前述供給頭進行相對移動之工程。A substrate processing method, which has: Use the stage to support the process of the substrate to be etched; and The process of heating the substrate supported by the stage by the substrate heating part; and Regarding the outer peripheral end of the substrate supported by the stage and heated by the substrate heating section, the hardened thermoplastic resin is held by the supply head and brought into contact, To make the softened thermoplastic resin adhere to the substrate for supply, and to move the supply head relative to the substrate. 如請求項10所記載之基板處理方法，其中， 係對藉由前述台而被作了支持的前述基板之外周端部，藉由被形成為環狀之前述基板加熱部進行加熱。The substrate processing method described in claim 10, wherein: The outer peripheral end portion of the substrate supported by the stage is heated by the substrate heating portion formed in a ring shape. 如請求項10或11所記載之基板處理方法，其中， 前述供給頭，係對於藉由前述台而被作支持的前述基板之外周面、以及藉由前述台而被作支持的前述基板之上面的外周區域，此些之其中一方或者是雙方，而使所保持了的硬化狀態之前述熱可塑性樹脂作接觸。The substrate processing method described in claim 10 or 11, wherein: The supply head is for the outer peripheral surface of the substrate supported by the stage and the outer peripheral area on the upper surface of the substrate supported by the stage, one or both of these The above-mentioned thermoplastic resin in the maintained hardened state makes contact. 如請求項10所記載之基板處理方法，其中， 係具備有將被供給至了前述基板處的前述熱可塑性樹脂藉由前述供給頭來從前述基板而剝離之工程。The substrate processing method described in claim 10, wherein: It is equipped with the process of peeling the said thermoplastic resin supplied to the said board|substrate from the said board|substrate by the said supply head. 如請求項13所記載之基板處理方法，其中， 前述供給頭，係使所保持了的硬化狀態之前述熱可塑性樹脂附著於被供給至了前述基板處的前述熱可塑性樹脂之一部分處並移動，而將被供給至了前述基板處的前述熱可塑性樹脂從前述基板而剝離。The substrate processing method described in claim 13, wherein: The supply head causes the thermoplastic resin in the maintained hardened state to adhere to and move a part of the thermoplastic resin supplied to the substrate, so that the thermoplastic resin supplied to the substrate is moved. The resin is peeled from the aforementioned substrate. 如請求項13所記載之基板處理方法，其中， 前述供給頭，係使所保持了的硬化狀態之前述熱可塑性樹脂附著於被供給至前述基板處的前述熱可塑性樹脂之一部分處並旋轉，而將被供給至了前述基板處的前述熱可塑性樹脂從前述基板而剝離。The substrate processing method described in claim 13, wherein: The supply head causes the thermoplastic resin in the maintained hardened state to adhere to a part of the thermoplastic resin supplied to the substrate and rotate, so as to transfer the thermoplastic resin supplied to the substrate. It is peeled from the aforementioned substrate. 如請求項10所記載之基板處理方法，其中， 係具備有將被供給至了前述基板處的前述熱可塑性樹脂藉由剝離手來從前述基板而剝離之工程。The substrate processing method described in claim 10, wherein: It is equipped with a process for peeling the thermoplastic resin supplied to the substrate from the substrate by a peeling hand. 如請求項13～請求項16中之任一項所記載之基板處理方法，其中， 係具備有將被從前述基板而剝離了的前述熱可塑性樹脂藉由樹脂成形部來加熱並成形之工程。The substrate processing method described in any one of claim 13 to claim 16, wherein: It is equipped with the process of heating and shaping the said thermoplastic resin peeled from the said board|substrate by the resin molding part. 如請求項17所記載之基板處理方法，其中， 係具備有將被從前述基板而剝離了的前述熱可塑性樹脂，在藉由前述樹脂成形部而成形之工程之前藉由樹脂洗淨部來進行洗淨之洗淨工程。The substrate processing method described in claim 17, wherein: It is equipped with a cleaning process in which the thermoplastic resin peeled from the substrate is cleaned by the resin cleaning part before the process of forming by the resin molding part.
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