JP2000133883A5 - - Google Patents

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Publication number
JP2000133883A5
JP2000133883A5 JP1998300615A JP30061598A JP2000133883A5 JP 2000133883 A5 JP2000133883 A5 JP 2000133883A5 JP 1998300615 A JP1998300615 A JP 1998300615A JP 30061598 A JP30061598 A JP 30061598A JP 2000133883 A5 JP2000133883 A5 JP 2000133883A5
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JP
Japan
Prior art keywords
nitride semiconductor
layer
semiconductor device
undoped
angstroms
Prior art date
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Pending
Application number
JP1998300615A
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English (en)
Japanese (ja)
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JP2000133883A (ja
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Publication date
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Priority to JP30061598A priority Critical patent/JP2000133883A/ja
Priority claimed from JP30061598A external-priority patent/JP2000133883A/ja
Publication of JP2000133883A publication Critical patent/JP2000133883A/ja
Publication of JP2000133883A5 publication Critical patent/JP2000133883A5/ja
Pending legal-status Critical Current

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JP30061598A 1998-10-22 1998-10-22 窒化物半導体素子 Pending JP2000133883A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30061598A JP2000133883A (ja) 1998-10-22 1998-10-22 窒化物半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30061598A JP2000133883A (ja) 1998-10-22 1998-10-22 窒化物半導体素子

Publications (2)

Publication Number Publication Date
JP2000133883A JP2000133883A (ja) 2000-05-12
JP2000133883A5 true JP2000133883A5 (fr) 2005-12-08

Family

ID=17886998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30061598A Pending JP2000133883A (ja) 1998-10-22 1998-10-22 窒化物半導体素子

Country Status (1)

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JP (1) JP2000133883A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8227268B2 (en) 2001-05-30 2012-07-24 Cree, Inc. Methods of fabricating group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7692182B2 (en) 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
JP2003229645A (ja) * 2002-01-31 2003-08-15 Nec Corp 量子井戸構造およびそれを用いた半導体素子ならびに半導体素子の製造方法
US7781777B2 (en) 2004-03-08 2010-08-24 Showa Denko K.K. Pn junction type group III nitride semiconductor light-emitting device
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
US20060267043A1 (en) 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
JP5048236B2 (ja) * 2005-11-10 2012-10-17 住友電気工業株式会社 半導体発光素子、および半導体発光素子を作製する方法
US7769066B2 (en) 2006-11-15 2010-08-03 Cree, Inc. Laser diode and method for fabricating same
US7834367B2 (en) 2007-01-19 2010-11-16 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
JP2009021361A (ja) 2007-07-11 2009-01-29 Sumitomo Electric Ind Ltd 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法
US8519437B2 (en) 2007-09-14 2013-08-27 Cree, Inc. Polarization doping in nitride based diodes
US9012937B2 (en) 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same
US20090283746A1 (en) * 2008-05-15 2009-11-19 Palo Alto Research Center Incorporated Light-emitting devices with modulation doped active layers
JP5381439B2 (ja) * 2009-07-15 2014-01-08 住友電気工業株式会社 Ｉｉｉ族窒化物半導体光素子
US8536615B1 (en) 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
US8604461B2 (en) 2009-12-16 2013-12-10 Cree, Inc. Semiconductor device structures with modulated doping and related methods
JP2011159771A (ja) * 2010-01-29 2011-08-18 Nec Corp 窒化物半導体発光素子、窒化物半導体発光素子の製造方法、および電子装置
US8575592B2 (en) 2010-02-03 2013-11-05 Cree, Inc. Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
JP2013115372A (ja) * 2011-11-30 2013-06-10 Sharp Corp 半導体発光素子およびその製造方法、半導体発光素子の製造システム
KR102276422B1 (ko) 2014-07-18 2021-07-12 삼성전자주식회사 투과형 고흡수 광 변조기 및 그 제조방법
CN114038955B (zh) * 2021-02-25 2022-12-16 重庆康佳光电技术研究院有限公司 发光芯片的外延结构、发光芯片及显示背板

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3064891B2 (ja) * 1995-02-03 2000-07-12 住友化学工業株式会社 ３−５族化合物半導体とその製造方法および発光素子
JPH0997921A (ja) * 1995-07-21 1997-04-08 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法
JPH09129920A (ja) * 1995-10-27 1997-05-16 Sumitomo Chem Co Ltd 発光素子用３−５族化合物半導体及び発光素子
JP3658112B2 (ja) * 1995-11-06 2005-06-08 日亜化学工業株式会社 窒化物半導体レーザダイオード
JP3958818B2 (ja) * 1997-01-08 2007-08-15 三菱電線工業株式会社 半導体発光素子及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8227268B2 (en) 2001-05-30 2012-07-24 Cree, Inc. Methods of fabricating group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
US8546787B2 (en) 2001-05-30 2013-10-01 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure

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