JP2000133674A - Ball bonding method and device - Google Patents

Ball bonding method and device

Info

Publication number
JP2000133674A
JP2000133674A JP10301403A JP30140398A JP2000133674A JP 2000133674 A JP2000133674 A JP 2000133674A JP 10301403 A JP10301403 A JP 10301403A JP 30140398 A JP30140398 A JP 30140398A JP 2000133674 A JP2000133674 A JP 2000133674A
Authority
JP
Japan
Prior art keywords
ball
wire
charge removal
bonding
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10301403A
Other languages
Japanese (ja)
Inventor
Yuji Izeki
裕二 井関
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP10301403A priority Critical patent/JP2000133674A/en
Publication of JP2000133674A publication Critical patent/JP2000133674A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78268—Discharge electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/786—Means for supplying the connector to be connected in the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To raise the mounting yield by a method wherein a charge removal process for removing a charge in a wire and a ball is provided between a process for forming the ball on the point of the wire by discharge of an electric torch electrode and a first bonding process. SOLUTION: A ball 1a is formed on the point of a wire 1 by discharge of an electric torch electrode and a charge removal process 11 for removing a charge in the wire 1 and the ball 1a is provided between this ball formation process and a first bonding process. Or a switch 12 is used as charge removal circuits, the charge removal circuit on one side of the charge removal circuits is connected electrically with the wire 1 and the other charge removal circuit is earthed. This switch 12 is controlled by a signal from a control circuit 7 and is turned on at the time of the process 11. The switch 12 may be formed of an electronic element and may be constituted of a mechanical switch. Or clampers for charge removal are provided as the charge removal circuits, the clamper on one side of the clampers for charge removal is earthed, and when the wire is clamped by the earthed clamper, the wire is earthed.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、ボールボンディン
グ方法およびその装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ball bonding method and a ball bonding method.

【０００２】[0002]

【従来の技術】従来のボールボンディング方法を第６図
に示す。まず第６（ａ）図に示すようにワイヤ１を通し
挿通したキャピラリツール２の下端にボール３が形成さ
れている。このボールの形成方法は後述する。第一ボン
ディングは、第６（ｂ）図に示すように、ボール３をキ
ャピラリツール２で半導体チップ７上に形成された電極
パッド８に圧着することでなされる。ついで、基板上配
線９への第二ボンディングが第６（ｃ）図に示すように
行われる。その後、第６（ｄ）〜（ｆ）図に示すよう
に、キャピラリツール２の下端より突出したワイヤ１の
先端に、高電圧発生回路６で作られた高電圧を電気トー
チ電極３を通して印加、放電させることでボール１ａが
形成できる。ボールはこのように高電圧放電で形成して
いるため、ボールとワイヤは電荷１０を帯びている。第
６（ａ）図では、電荷を省略していたが、実際には第６
（ｆ）図と同様、ボールとワイヤは電荷を帯びている。
以上の従来のボールボンディング方法の工程をフローチ
ャートとして第７図にまとめる。2. Description of the Related Art A conventional ball bonding method is shown in FIG. First, as shown in FIG. 6 (a), a ball 3 is formed at the lower end of a capillary tool 2 through which a wire 1 is inserted. The method of forming this ball will be described later. The first bonding is performed by pressing the ball 3 with the capillary tool 2 to the electrode pad 8 formed on the semiconductor chip 7 as shown in FIG. 6 (b). Next, the second bonding to the on-substrate wiring 9 is performed as shown in FIG. 6 (c). Thereafter, as shown in FIGS. 6 (d) to 6 (f), a high voltage generated by the high voltage generating circuit 6 is applied to the tip of the wire 1 projecting from the lower end of the capillary tool 2 through the electric torch electrode 3, The ball 1a can be formed by discharging. Since the ball is formed by such a high-voltage discharge, the ball and the wire have a charge of 10. In FIG. 6 (a), the electric charge is omitted.
(F) As in the figure, the ball and the wire are charged.
The steps of the above conventional ball bonding method are summarized in FIG. 7 as a flowchart.

【０００３】このボールボンディング装置は、第８図に
示すようにワイヤ１、キャピラリツール２、電気トーチ
電極３、クランパ４、ワイヤスプール５、高電圧発生回
路６、およびそれらを制御する制御回路７から成ってい
る。As shown in FIG. 8, this ball bonding apparatus includes a wire 1, a capillary tool 2, an electric torch electrode 3, a clamper 4, a wire spool 5, a high voltage generating circuit 6, and a control circuit 7 for controlling them. Made up of

【０００４】[0004]

【発明が解決しようとする課題】以上のように、従来の
ボールボンディング方法では、ボールを高電圧放電で形
成し、その後、第一ボンディングを行っているため、ボ
ール形成時にワイヤとボールに帯電した電荷が第一ボン
ディングと同時に、半導体チップ上の電極パッドを通じ
てチップ内の素子に流れ込み、素子を破壊することがあ
るという問題があった。As described above, in the conventional ball bonding method, the ball is formed by high-voltage discharge, and then the first bonding is performed. At the same time as the first bonding, the electric charge flows into the element in the chip through the electrode pad on the semiconductor chip, and there is a problem that the element may be destroyed.

【０００５】[0005]

【課題を解決するための手段】本発明のボールボンディ
ング方法は、電気トーチ電極の放電によりワイヤの先端
にボールを形成するボール形成工程と第一ボンディング
工程の間に、ワイヤとボールに帯電している電荷を取り
除くための除電工程を設けるものである。According to the ball bonding method of the present invention, the wire and the ball are charged between the ball forming step of forming the ball at the tip of the wire by discharging the electric torch electrode and the first bonding step. This is to provide a charge elimination step for removing the electric charge.

【０００６】上記ボンディング方法を実現するボールボ
ンディング装置は従来のボールボンディング装置におい
て、ワイヤとボールに帯電している電荷を取り除くため
の除電回路を有している。[0006] The ball bonding apparatus for realizing the above bonding method is different from the conventional ball bonding apparatus in that the ball bonding apparatus has a static elimination circuit for removing electric charges from the wires and the balls.

【０００７】[0007]

【発明の実施の形態】以下、実施例を用いて本発明の好
ましい実施形態を説明する。 （実施例１）以下、本発明の一実施例につき、図面を参
照しながら説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to examples. (Embodiment 1) Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

【０００８】第１図は本発明によるボールボンディング
方法の第１の実施例を説明するためのボンディング装置
の構成を示すブロック図である。同図において、ワイヤ
１、キャピラリツール２、電気トーチ電極３、クランパ
４、ワイヤスプール５、高電圧発生回路６、除電回路１
１およびそれらを制御する制御回路７である。FIG. 1 is a block diagram showing the configuration of a bonding apparatus for explaining a first embodiment of the ball bonding method according to the present invention. In the figure, a wire 1, a capillary tool 2, an electric torch electrode 3, a clamper 4, a wire spool 5, a high voltage generating circuit 6, a static elimination circuit 1
1 and a control circuit 7 for controlling them.

【０００９】第２図は第１図に示した構成のボンディン
グ装置でのボールボンディング方法の工程をフローチャ
ートで示すものである。ボール形成から第一ボンディン
グ工程の間に、ワイヤとボールに帯電した電荷を取り除
く除電工程を加えている。この除電工程を付加すること
で、これまで第一ボンディング時に、半導体チップ内の
素子に流れ込んで素子を破壊していた電荷をなくすこと
ができ、ボンディング工程時の実装歩留まりを上げるこ
とができる。FIG. 2 is a flowchart showing steps of a ball bonding method in the bonding apparatus having the structure shown in FIG. Between the ball formation and the first bonding step, a charge elimination step for removing electric charges charged on the wire and the ball is added. By adding this charge removing step, it is possible to eliminate the electric charge that has flowed into the element in the semiconductor chip and destroyed the element at the time of the first bonding, thereby increasing the mounting yield in the bonding step.

【００１０】第３図は、除電回路の第１の実施例であ
る。スイッチ１２が除電回路になっており、一方がワイ
ヤに電気的に接続されており、他方が接地されている。
このスイッチは制御回路７からの信号で制御されてお
り、除電工程の際にＯＮになる。スイッチは、電子素子
で形成してもよく、機械的なスイッチで構成しても良
い。このようにスイッチで除電回路を構成した場合に
は、装置に除電回路を内蔵できるため、装置を小型する
ことができる。FIG. 3 shows a first embodiment of the static elimination circuit. The switch 12 is a static elimination circuit, one of which is electrically connected to a wire, and the other of which is grounded.
This switch is controlled by a signal from the control circuit 7 and is turned on at the time of the charge removal step. The switch may be formed of an electronic element or may be formed of a mechanical switch. When the static elimination circuit is configured by the switches in this way, the static elimination circuit can be built in the device, so that the device can be downsized.

【００１１】第４図は、除電回路の第２の実施例であ
る。除電用クランパ１３が除電回路である。除電用クラ
ンパの一方は接地されており、ワイヤをクランプすると
ワイヤが接地されることになる。現有設備への改良を施
す場合には、このような機械的除電回路の方が容易であ
る。 （実施例２）第５図は本発明によるボールボンディング
方法の第２の実施例を説明するためのボンディング方法
の工程をフローチャートで示すものである。ボール形成
を目的に行う放電工程を標準ルーチンとして２回以上行
う方法である。こうすることで、ボール形成の歩留まり
を上げることができる。同様な効果は、高電圧発生回路
内の放電電流の容量を大きくすれば良いが、そうすると
装置の改造が必要となったり、装置自体が大きくなって
まう。放電工程を複数回行うのはソフトの制御ソフトの
書き換えだけで済むので、装置本体への負担が少ない。
この実施例を実現するためのボンディング装置の構成
は、第１の実施例で示したものと同一である。FIG. 4 shows a second embodiment of the static elimination circuit. The static elimination clamper 13 is a static elimination circuit. One of the static elimination clampers is grounded, and when the wire is clamped, the wire is grounded. When making improvements to existing equipment, such a mechanical static elimination circuit is easier. (Embodiment 2) FIG. 5 is a flowchart showing steps of a bonding method for explaining a ball bonding method according to a second embodiment of the present invention. This is a method in which a discharge process for forming a ball is performed twice or more as a standard routine. By doing so, the yield of ball formation can be increased. A similar effect can be obtained by increasing the capacity of the discharge current in the high-voltage generating circuit. However, this requires modification of the device or increases the size of the device itself. Performing the discharging step a plurality of times only requires rewriting the software control software, so that the burden on the apparatus body is small.
The configuration of the bonding apparatus for realizing this embodiment is the same as that shown in the first embodiment.

【００１２】以上、本発明の実施の形態を説明したが、
本発明は上述の実施の形態に限定されるものではない。
本発明の要旨を逸脱しない範囲で種々の変形ができる。The embodiment of the present invention has been described above.
The present invention is not limited to the above embodiment.
Various modifications can be made without departing from the spirit of the present invention.

【００１３】[0013]

【発明の効果】以上述べたように、本発明のボールボン
ディング方法によれば、実装歩留まりを上げることが可
能なボールボンディング方法を提供することができる。As described above, according to the ball bonding method of the present invention, it is possible to provide a ball bonding method capable of increasing the mounting yield.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の第１の実施例に係わるボールボンディ
ング装置のブロック図である。FIG. 1 is a block diagram of a ball bonding apparatus according to a first embodiment of the present invention.

【図２】本発明の第1の実施例に係わるボールボンディ
ング方法のフローチャートである。FIG. 2 is a flowchart of a ball bonding method according to the first embodiment of the present invention.

【図３】除電回路の第１の実施例を示すブロック図であ
る。FIG. 3 is a block diagram showing a first embodiment of a static elimination circuit;

【図４】除電回路の第２の実施例を示すブロック図であ
る。FIG. 4 is a block diagram showing a second embodiment of the static elimination circuit.

【図５】本発明の第２の実施例に係わるボールボンディ
ング方法のフローチャートである。FIG. 5 is a flowchart of a ball bonding method according to a second embodiment of the present invention.

【図６】従来のボールボンディング方法の工程図であ
る。FIG. 6 is a process chart of a conventional ball bonding method.

【図７】従来のボールボンディング方法のフローチャー
トである。FIG. 7 is a flowchart of a conventional ball bonding method.

【図８】従来のボールボンディング装置のブロック図で
ある。FIG. 8 is a block diagram of a conventional ball bonding apparatus.

【符号の説明】[Explanation of symbols]

１ ワイヤ ２ キャピラリツール ３ ボール ４ クランパ ５ ワイヤスプール ６ 高電圧発生回路 ７ 半導体チップ ８ 電極パッド ９ 基板上配線 １０ 電荷 １１ 除電回路 １２ スイッチ １３ 除電用クランパ DESCRIPTION OF SYMBOLS 1 Wire 2 Capillary tool 3 Ball 4 Clamp 5 Wire spool 6 High voltage generating circuit 7 Semiconductor chip 8 Electrode pad 9 Wiring on board 10 Electric charge 11 Static elimination circuit 12 Switch 13 Static elimination clamper

Claims (3)

【特許請求の範囲】[Claims] 【請求項１】 電気トーチ電極の放電によりワイヤの先
端にボールを形成し、第一ボンディングと第二ボンディ
ングを行うボールボンディング方法において、前記ボー
ル形成工程と第一ボンディング工程の間にワイヤとボー
ルに帯電している電荷を取り除くための除電工程を有す
ることを特徴とするボールボンディング方法。1. A ball bonding method in which a ball is formed at the tip of a wire by discharge of an electric torch electrode, and a first bonding and a second bonding are performed. A ball bonding method comprising a charge removing step for removing charged charges. 【請求項２】 ボール形成工程において、放電を２回以
上行うことを特徴とする請求項１記載のボールボンディ
ング方法。2. The ball bonding method according to claim 1, wherein discharging is performed twice or more in the ball forming step. 【請求項３】 電気トーチ電極の放電によりワイヤの先
端にボールを形成し、第一ボンディングと第二ボンディ
ングを行うボールボンディング装置において、ワイヤと
ボールに帯電している電荷を取り除くための除電回路を
有することを特徴とするボールボンディング装置。3. A ball-bonding apparatus for forming a ball at the tip of a wire by discharging an electric torch electrode and performing a first bonding and a second bonding, wherein a discharging circuit for removing charges charged on the wire and the ball is provided. A ball bonding apparatus comprising:
JP10301403A 1998-10-22 1998-10-22 Ball bonding method and device Pending JP2000133674A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10301403A JP2000133674A (en) 1998-10-22 1998-10-22 Ball bonding method and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10301403A JP2000133674A (en) 1998-10-22 1998-10-22 Ball bonding method and device

Publications (1)

Publication Number Publication Date
JP2000133674A true JP2000133674A (en) 2000-05-12

Family

ID=17896460

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10301403A Pending JP2000133674A (en) 1998-10-22 1998-10-22 Ball bonding method and device

Country Status (1)

Country Link
JP (1) JP2000133674A (en)

Similar Documents

Publication Publication Date Title
US6896170B2 (en) Wire bonder for ball bonding insulated wire and method of using same
US5173762A (en) Semiconductor device using bonding wires of different materials
KR890000585B1 (en) Method of forming a wire bond
JP2000133674A (en) Ball bonding method and device
JP4007917B2 (en) Semiconductor device and manufacturing method thereof
JP2000294595A (en) Wire bonding method
JPH0574833A (en) Wire bonding apparatus
JP3309764B2 (en) Wire bonding method
JP2534136B2 (en) Ball forming method in wire bonder
JPH0684991A (en) Semiconductor device
JP2933723B2 (en) Stripping device for coated wire
JP2904618B2 (en) Ball forming device for wire bonder
JP2601755B2 (en) Wire bonding apparatus and wire bonding method
JPH05102223A (en) Manufacture of semiconductor device
JP2007305997A (en) Wire bonding process for insulated wire
JP2000068320A (en) Semiconductor device and method for preventing electrostatic breakdown thereof
KR20070081226A (en) Wire free air ball method for insulated wire
JPS6043012B2 (en) semiconductor assembly equipment
JP2749557B2 (en) Bonding equipment
JPH03257940A (en) Wire bonding equipment of semiconductor integrated circuit device
JPH05343604A (en) Hybrid ic and its manufacture
JPS59214248A (en) Wire bonding of semiconductor circuit
JPS63182829A (en) Bonding device and spool used therefor
JPH06283653A (en) Semiconductor device
JP2001053195A (en) Method for manufacturing semiconductor device