JP2749557B2 - Bonding equipment - Google Patents

Bonding equipment

Info

Publication number
JP2749557B2
JP2749557B2 JP8111033A JP11103396A JP2749557B2 JP 2749557 B2 JP2749557 B2 JP 2749557B2 JP 8111033 A JP8111033 A JP 8111033A JP 11103396 A JP11103396 A JP 11103396A JP 2749557 B2 JP2749557 B2 JP 2749557B2
Authority
JP
Japan
Prior art keywords
wire
spool
metal wire
bonding
connection terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP8111033A
Other languages
Japanese (ja)
Other versions
JPH08330349A (en
Inventor
進 沖川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8111033A priority Critical patent/JP2749557B2/en
Publication of JPH08330349A publication Critical patent/JPH08330349A/en
Application granted granted Critical
Publication of JP2749557B2 publication Critical patent/JP2749557B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/4556—Disposition, e.g. coating on a part of the core
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
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    • H01L2224/4554—Coating
    • H01L2224/45599—Material
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78268—Discharge electrode
    • H—ELECTRICITY
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 【０００１】 【発明の属する技術分野】本発明は、ボンディング技術
に関し、特に、金属線表面が絶縁体で被覆された被覆ワ
イヤを使用するワイヤボンディング技術に適用して有効
な技術に関するものである。 【０００２】 【従来の技術】樹脂封止型半導体装置の半導体チップと
リードとの接続には、ワイヤが使用されている。ワイヤ
の接続は、ワイヤボンディング装置により行われてい
る。 【０００３】ワイヤは、ボンディング装置に取り付けら
れたスプールに巻き回されており、このスプールからテ
ンショナ、ワイヤクランパ、ボンディングツール等を通
して、ボンディング部分に供給される。ボンディング装
置は、供給側先端部にボールを形成したワイヤを半導体
チップの外部端子（ボンディングパット）に接続した
後、所定長さの後端側のワイヤをリードに接続するよう
に構成されている。この種のボンディング方法は所謂ボ
ールボンディング法と称されている。前記ワイヤの供給
側の先端部のボールは、アーク電極を近接させ、アーク
を発生させることで形成している。 【０００４】前記ワイヤとしては、被覆ワイヤが使用さ
れる傾向にある。被覆ワイヤは、金，Ｃｕ等の金属線表
面をウレタン樹脂，ポリイミド樹脂，金属酸化膜等の絶
縁体で被覆したものである。この被覆ワイヤは、樹脂封
止した際に、ワイヤ間の接触不良やワイヤと半導体チッ
プとの接触不良等を防止することができるという特徴が
ある。なお、被覆ワイヤについては、例えば、特開昭６
１−１９４７３５号公報に記載されている。 【０００５】 【発明が解決しようとする課題】しかしながら、本発明
者は、前述の被覆ワイヤのボンディング試験ならびにそ
の検討の結果、次の問題点が生じることを見い出した。 【０００６】前記被覆ワイヤの金属線は、その表面が絶
縁体で覆われているので、スプールからの供給経路にお
いて接地（基準電位、例えば０〔Ｖ〕）させることがで
きない。このため、被覆ワイヤの供給側の先端部にボー
ルを形成する際に、アークが発生しづらく、充分なボー
ルを形成することができないので、ボールボンディング
が行えなくなる。 【０００７】また、前述のように、被覆ワイヤの金属線
を接地させることができないので、被覆ワイヤの供給側
の先端部にボールを形成する際に、被覆ワイヤの浮遊容
量に電荷がチャージアップする。このため、半導体チッ
プの外部端子に被覆ワイヤを接続した時に、前記浮遊容
量の電荷がデスチャージし、半導体チップの入出力回路
に静電気破壊を生じる。 【０００８】本発明の目的は、被覆ワイヤを使用するボ
ンディング技術において、ボールボンディングを確実に
行うことが可能な技術を提供することにある。 【０００９】本発明の他の目的は、被覆ワイヤを使用す
るボンディング技術において、半導体装置に静電気破壊
が生じることを防止することが可能な技術を提供するこ
とにある。 【００１０】本発明の他の目的は、前記夫々の目的を達
成することが可能なボンディング装置を提供することに
ある。 【００１１】本発明の前記ならびにその他の目的と新規
な特徴は、本明細書の記述及び添付図面によって明らか
になるであろう。 【００１２】 【課題を解決するための手段】本願において開示される
発明のうち、代表的なものの概要を簡単に説明すれば、
以下のとおりである。 【００１３】本発明のボンディング装置は、半導体チッ
プの外部端子とインナーリード部とをワイヤにより電気
的に接続するボンディング装置であって、金属線が絶縁
体により被覆された被覆ワイヤが巻き付けられ、前記被
覆ワイヤの巻き始め端部の金属線に電気的に接続される
接続端子を有するスプールと、前記被覆ワイヤをその供
給側から繰り出して前記外部端子と前記インナーリード
部との間に前記金属線を接続するボンディングツール
と、アーク発生回路に接続され、前記被覆ワイヤの供給
側先端部にボールを形成するアーク電極と、前記スプー
ルを回転自在に支持し、前記接続端子に電気的に接続さ
れるとともに、基準電位端子に電気的に接続されるスプ
ールホルダとを有し、前記被覆ワイヤは前記接続端子と
前記スプールホルダとを介して前記基準電位端子に接続
され、前記金属線の表面または前記絶縁体のいずれかが
着色されていることを特徴とする。 【００１４】上述した手段によれば、前記被覆ワイヤの
金属線をスプールホルダを介して基準電位にすることが
できるので、ボール形成時にアークの発生を良好にし、
被覆ワイヤの供給側の先端部に確実にボールを形成する
ことができる。また、被覆ワイヤを基準電位にすること
ができるので、被覆ワイヤの浮遊容量に電荷がチャージ
アップすることを防止することができる。さらに、被覆
ワイヤの金属線の表面または絶縁体のいずれかが着色さ
れているので、被覆が除去されているか否かを容易に確
認でき、誤ってボンディングすることを防止でき、ボン
ディング装置の信頼性を高めることができる。 【００１５】 【発明の実施の形態】以下、本発明の構成について、実
施の形態とともに説明する。 【００１６】なお、実施の形態を説明するための全図に
おいて、同一機能を有するものは同一符号を付け、その
繰り返しの説明は省略する。 【００１７】（実施の形態１）本発明の実施の形態１で
あるボンディング装置の概略構造を示すと、図１の通り
であり、ボンディング装置は、図１に示すように、スプ
ール１に巻き回された被覆ワイヤ２をボンディング部分
３に供給するように構成されている。被覆ワイヤ２の供
給は、テンショナ４、ワイヤ案内部材５、ワイヤクラン
パ６、ボンディングツール７の夫々を通してボンディン
グ部分３に供給されている。 【００１８】前記ボンディング部分３には、図２（断面
図）及び図３（要部断面図）で示すように構成される、
樹脂封止前の樹脂封止型半導体装置（以下、半導体装置
という）１２が配置されている。半導体装置１２は、接
続金属膜１２Ｂを介してタブ部１２Ｃ上に搭載された半
導体チップ１２Ａと、リード１２Ｄのインナーリード部
とを樹脂封止部材１２Ｅで樹脂封止して構成されてい
る。半導体チップ１２Ａとリード１２Ｄとは、前記被覆
ワイヤ２で接続されている。被覆ワイヤ２の一端部は、
半導体チップ１２Ａのパッシベーション膜１２Ａｂの開
口部から露出する外部端子（ボンディングパット）１２
Ａａに接続されている。被覆ワイヤ２の他部は、リード
１２Ｄのインナーリード部に接続されている。 【００１９】前記被覆ワイヤ２は、図３に詳細に示すよ
うに、金属線２Ａの表面に絶縁体２Ｂを被覆して構成さ
れている。金属線２Ａは、例えば、金（Ａｕ）、銅（Ｃ
ｕ）、アルミニウム（Ａｌ）等で形成する。絶縁体２Ｂ
は、例えばウレタン樹脂、ポリイミド樹脂、金属酸化膜
（ＣｕＯ，Ｃｕ2 Ｏ，Ａｌ2 Ｏ2)で形成する。 【００２０】前記ボンディングツール７の先端部に位置
する、被覆ワイヤ２の供給側の先端部には、ボール２Ａ
ａが形成されるようになっている。ボール２Ａａは、ボ
ンディングツール７に近接した位置に設けられたアーク
電極１０で形成される。つまり、ボール２Ａａは、被覆
ワイヤ２の供給側の先端部の金属線２Ａとアーク電極１
０との間にアークを発生することで形成される。アーク
電極１０は、アーク発生回路１１に接続されている。 【００２１】アーク発生回路１１は、主に、コンデンサ
Ｃ1 、蓄積用コンデンサＣ2 、トリガーで作動するサイ
リスタＤ、抵抗Ｒで構成されている。ＤＣは数千〔Ｖ〕
の電圧を供給する直流電源、ＧＮＤは基準電位（例えば
接地電位＝０〔Ｖ〕、Ｖは電圧計、Ａは電流計である。 【００２２】前記被覆ワイヤ２が巻き回された前記スプ
ール１は、図１及び図４（要部斜視図）で示すように、
例えば、アルミニウム金属の表面にアルマイト処理を施
して構成する。アルマイト処理は、機械的強度の向上や
キズの発生を防止するために施す。このスプール１は、
前述のように、アルマイト処理が施されているので絶縁
性を有する。 【００２３】前記スプール１は、スプールホルダ８に取
り付けられ、このスプールホルダ８の回転軸８Ａによっ
てボンディング装置の本体９に取り付けられている。 【００２４】スプールホルダ８は、少なくともその一部
に導電性を有するように、例えば、ステンレス鋼で構成
されている。 【００２５】このように構成されるボンディング装置
は、図４及び図５（要部拡大斜視図）で示すように、ス
プール１に接続端子１Ａが設けられている。接続端子１
Ａは、スプールホルダ８の導電性を有する部分と接触す
る、スプール１の側面部部粉（鍔部）に、点形状で設け
られている。 【００２６】接続端子１Ａは、図５に示すように、絶縁
体１Ａａの上部に導電体１Ａｂを設け、この導電体１Ａ
ｂの上部に接続用金属部１Ａｃを設けて構成している。
絶縁体１Ａａはスプール１と電気的に分離し、しかも、
スプールホルダ８に接続用金属部１Ａｃを確実に当接で
きる適度な弾性力を有するように、例えばポリイミド樹
脂で形成する。導電体１Ａｂは、被覆ワイヤ２の金属線
２Ａを接続する接続用金属部１Ａｃと、スプールホルダ
８に接触する接続用金属部１Ａｃとを確実に接続できる
ように、例えば、Ｃｕ箔で形成する。接続用金属部１Ａ
ｃは、導電性ペースト、半田、接着テープ等で形成す
る。 【００２７】この接続端子１Ａには、スプール１の側面
（鍔部）に形成された切り欠き部を通して、ボンディン
グ部分３に供給される側と反対側の被覆ワイヤ２の端部
の金属線２Ａ、すなわち被覆ワイヤ２の巻き始め端部の
金属線２Ａを接続するように構成されている。この金属
線２Ａは、接続端子１Ａの接続用金属部１Ａｃによって
接続される。被覆ワイヤ２の巻き始めの金属線２Ａの表
面の絶縁体２Ｂは、加熱或いは化学的に除去する。接続
端子１Ａつまり被覆ワイヤ２の金属線２Ａは、スプール
ホルダ８、その回転軸８Ａ及び本体９を通して基準電位
ＧＮＤに接続されている。基準電位ＧＮＤは、前記アー
ク発生回路１１の基準電位ＧＮＤと同様の電位である。 【００２８】このように、前記スプール１に基準電位Ｇ
ＮＤに接続するための接続端子１Ａを設け、この接続端
子に被覆ワイヤ２の巻き始め端部の金属線２Ａを接続す
ることにより、スプールホルダ８等を通して基準電位Ｇ
ＮＤに接続することができるので、被覆ワイヤ２の金属
線２Ａを基準電位ＧＮＤに接続することができる。 【００２９】また、被覆ワイヤ２の金属線２Ａは、スプ
ール１の接続端子１Ａに被覆ワイヤ２の巻き始め端部の
金属線２Ａを接続するだけで基準電位ＧＮＤに接続する
ことができるので、被覆ワイヤ２の金属線２Ａを基準電
位ＧＮＤに接続するための作業を簡単にすることができ
る。 【００３０】また、前記接続端子１Ａを有するスプール
１を用いたボンディング装置は、前記被覆ワイヤ２の金
属線２Ａが基準電位ＧＮＤに接続されているので、ボー
ル形成時に、アーク電極１０と供給側の被覆ワイヤ２の
金属線２Ａとの間の電位差を充分に確保し、アークの発
生を良好にすることができるので、被覆ワイヤ２の供給
側の先端部の金属線２Ａに確実にボールを形成すること
ができる。 【００３１】また、被覆ワイヤ２の金属線２Ａを基準電
位ＧＮＤにすることができるので、被覆ワイヤ２の金属
線２Ａの浮遊容量に電荷がチャージアップすることを防
止することができる。つまり、半導体チップ１２Ａの外
部端子１２Ａａに、ボールが形成された被覆ワイヤ２の
供給側の先端部の金属線２Ａを接続するファーストボン
ディングの際に、過大電圧が半導体チップ１２Ａの入出
力回路に流入することを防止できるので、静電気破壊を
防止することができる。 【００３２】なお、前述の被覆ワイヤ２は、金属線２Ａ
の表面に絶縁体２Ｂが存在するか否かを明確にするため
に、いずれかを着色してもよい。 【００３３】（実施の形態２）本実施の形態２は、スプ
ールに設けられる接続端子の形状を変えた、本発明の他
の実施の形態である。 【００３４】本発明の実施の形態２であるボンディング
装置に使用されるスプールを図６（要部斜視図）で示
す。 【００３５】本実施の形態２のスプール１は、図６に示
すように、側面部分にリング形状の接続端子１Ａを設け
ている。この接続端子１Ａは、スプール１が回転した場
合であっても、基準電子ＧＮＤとの接続部材９Ａを通し
て、被覆ワイヤ２の金属線２Ａを確実に基準電位ＧＮＤ
に接続することができるように構成されている。 【００３６】このように、スプール１にリング形状の接
続端子１Ａを設けることにより、前記実施の形態１と略
同様の効果を得ることができる。 【００３７】（実施の形態３）本実施の形態のスプール
は、図６の端子１Ａにかわって、この部分のアルマイト
表面処理を取り除いた結果、表面が露出するアルミニウ
ム本体を接続端子とするものである。すなわち、アルミ
ニウム本体の全表面をアルマイト処理したスプールにお
いて、スプールの側壁外側のアルマイトの一部を除去し
てアルミニウム本体表面を露出してなり、露出されたこ
のアルミニウム地層領域を被覆ワイヤの金属線を基準電
位に接続するための接続端子としてなり、該接続端子に
被覆ワイヤの巻き始め端部の被覆膜が除去された金属線
を接続したことを特徴とするスプールである。 【００３８】なお、前記接続端子は、点形状、リング形
状等で構成されているものである。したがって、このス
プールは、前記実施の形態２のスプールと略同様な効果
を奏することができる。 【００３９】以上、本発明者によってなされた発明を実
施の形態に基づき具体的に説明したが、本発明は前記実
施の形態に限定されるものではなく、その要旨を逸脱し
ない範囲において種々変更可能であることは勿論であ
る。 【００４０】例えば、本発明は前記基準電位ＧＮＤを、
アーク電極１０に印加される電圧を変化させることで必
ずしも０〔Ｖ〕にしなくてもよい。 【００４１】また、本発明は、被覆ワイヤを使用する超
音波ボンディング技術に適用することができる。 【００４２】 【発明の効果】本願において開示される発明のうち、代
表的なものによって得られる効果を簡単に説明すれば、
以下のとおりである。 【００４３】被覆ワイヤが巻き回されたスプールにおい
て、前記被覆ワイヤの金属線をスプールホルダを介して
基準電位に接続することができる。 【００４４】被覆ワイヤを使用するボンディング装置に
おいて、確実にボールボンディングを行うことができ、
又半導体装置の静電気破壊を防止することができる。さ
らに、被覆ワイヤの金属線の表面または絶縁体のいずれ
かが着色されているので、被覆が除去されているか否か
を容易に確認でき、誤ってボンディングすることを防止
でき、信頼性の高いボンディング装置を提供することが
できる。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding technique, and more particularly, it is effective when applied to a wire bonding technique using a covered wire having a metal wire surface coated with an insulator. Technology. 2. Description of the Related Art Wires are used to connect semiconductor chips and leads of a resin-encapsulated semiconductor device. The connection of the wires is performed by a wire bonding apparatus. [0003] The wire is wound around a spool attached to a bonding apparatus, and is supplied to the bonding portion from the spool through a tensioner, a wire clamper, a bonding tool, and the like. The bonding apparatus is configured to connect a wire having a ball formed at a supply-side tip to an external terminal (bonding pad) of a semiconductor chip, and then connect a wire at a rear end of a predetermined length to a lead. This type of bonding method is called a so-called ball bonding method. The ball at the tip of the wire supply side is formed by causing an arc electrode to approach and generate an arc. [0004] As the wire, a coated wire tends to be used. The coated wire is obtained by coating the surface of a metal wire such as gold or Cu with an insulator such as a urethane resin, a polyimide resin, or a metal oxide film. This coated wire has a feature that, when sealed with a resin, poor contact between wires, poor contact between a wire and a semiconductor chip, and the like can be prevented. As for the coated wire, see, for example,
It is described in 1-119435. [0005] However, the present inventor has found that the following problems arise as a result of the above-described bonding wire bonding test and examination thereof. Since the surface of the metal wire of the covered wire is covered with an insulator, it cannot be grounded (reference potential, for example, 0 [V]) in a supply path from the spool. For this reason, when a ball is formed at the tip on the supply side of the coated wire, an arc is not easily generated and a sufficient ball cannot be formed, so that ball bonding cannot be performed. Further, as described above, since the metal wire of the covered wire cannot be grounded, when forming a ball at the tip of the supply side of the covered wire, electric charges are charged up to the floating capacitance of the covered wire. . Therefore, when the covering wire is connected to the external terminal of the semiconductor chip, the electric charge of the floating capacitance is discharged, and the input / output circuit of the semiconductor chip is destroyed by static electricity. An object of the present invention is to provide a technique capable of reliably performing ball bonding in a bonding technique using a covered wire. Another object of the present invention is to provide a technique capable of preventing electrostatic breakdown from occurring in a semiconductor device in a bonding technique using a covered wire. Another object of the present invention is to provide a bonding apparatus capable of achieving each of the above objects. The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings. Means for Solving the Problems Of the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows. A bonding apparatus according to the present invention is a bonding apparatus for electrically connecting an external terminal of a semiconductor chip and an inner lead portion with a wire, wherein a coated wire in which a metal wire is coated with an insulator is wound. A spool having a connection terminal electrically connected to a metal wire at a winding start end of the coated wire, and feeding out the coated wire from a supply side thereof to place the metal wire between the external terminal and the inner lead portion. A bonding tool to be connected, an arc electrode connected to an arc generating circuit, forming a ball at the supply-side tip of the coated wire, and a rotatably supporting spool, electrically connected to the connection terminal. And a spool holder electrically connected to a reference potential terminal, wherein the coated wire is connected to the connection terminal and the spool holder. It is connected to the reference potential terminal via either the surface or the insulator of the metal wire, characterized in that it is colored. According to the above-described means, the metal wire of the coated wire can be set to the reference potential via the spool holder, so that the occurrence of an arc can be improved when the ball is formed,
The ball can be reliably formed at the distal end on the supply side of the covered wire. Further, since the covered wire can be set to the reference potential, it is possible to prevent the charge from being charged up to the floating capacitance of the covered wire. Furthermore, since either the surface of the metal wire or the insulator of the coated wire is colored, it is easy to confirm whether or not the coating has been removed, and it is possible to prevent erroneous bonding and to reduce the reliability of the bonding apparatus. Can be increased. Hereinafter, the configuration of the present invention will be described together with embodiments. In all the drawings for describing the embodiments, those having the same functions are denoted by the same reference numerals, and their repeated description will be omitted. (Embodiment 1) A schematic structure of a bonding apparatus according to Embodiment 1 of the present invention is as shown in FIG. 1, and the bonding apparatus is wound around a spool 1 as shown in FIG. It is configured to supply the coated wire 2 to the bonding portion 3. The supply of the covering wire 2 is supplied to the bonding portion 3 through each of the tensioner 4, the wire guide member 5, the wire clamper 6, and the bonding tool 7. The bonding portion 3 is configured as shown in FIG. 2 (cross-sectional view) and FIG.
A resin-sealed semiconductor device (hereinafter, referred to as a semiconductor device) 12 before resin sealing is provided. The semiconductor device 12 is configured such that a semiconductor chip 12A mounted on a tab portion 12C via a connection metal film 12B and an inner lead portion of a lead 12D are resin-sealed with a resin sealing member 12E. The semiconductor chip 12A and the lead 12D are connected by the covering wire 2. One end of the coated wire 2 is
External terminals (bonding pads) 12 exposed from the openings of the passivation film 12Ab of the semiconductor chip 12A
Aa. The other part of the covering wire 2 is connected to the inner lead part of the lead 12D. As shown in detail in FIG. 3, the covering wire 2 is configured by covering a surface of a metal wire 2A with an insulator 2B. The metal wire 2A is made of, for example, gold (Au), copper (C
u), aluminum (Al) or the like. Insulator 2B
Is formed of, for example, a urethane resin, a polyimide resin, and a metal oxide film (CuO, Cu 2 O, Al 2 O 2 ). A ball 2A is provided at the tip of the supply side of the covering wire 2 which is located at the tip of the bonding tool 7.
a is formed. The ball 2Aa is formed by an arc electrode 10 provided at a position close to the bonding tool 7. That is, the ball 2 </ b> Aa is connected to the metal wire 2 </ b> A at the tip end on the supply side
It is formed by generating an arc between zero. The arc electrode 10 is connected to an arc generation circuit 11. The arc generating circuit 11 mainly comprises a capacitor C 1 , a storage capacitor C 2 , a thyristor D activated by a trigger, and a resistor R. DC is several thousand [V]
Is a reference potential (eg, ground potential = 0 [V], V is a voltmeter, and A is an ammeter. The spool 1 around which the coated wire 2 is wound is As shown in FIG. 1, FIG. 4 and FIG.
For example, it is configured by performing alumite treatment on the surface of aluminum metal. The alumite treatment is performed to improve mechanical strength and prevent scratches. This spool 1
As described above, since the alumite treatment is performed, it has insulating properties. The spool 1 is mounted on a spool holder 8, and is mounted on a main body 9 of a bonding apparatus by a rotation shaft 8A of the spool holder 8. The spool holder 8 is made of, for example, stainless steel so that at least a part thereof has conductivity. As shown in FIGS. 4 and 5 (enlarged perspective view of a main part), the bonding apparatus thus configured has a connection terminal 1A provided on a spool 1. Connection terminal 1
A is provided in a dotted shape on the side surface portion powder (flange) of the spool 1 which comes into contact with the conductive portion of the spool holder 8. As shown in FIG. 5, the connection terminal 1A is provided with a conductor 1Ab on top of an insulator 1Aa.
The connection metal part 1Ac is provided on the upper part of the b.
The insulator 1Aa is electrically separated from the spool 1, and
It is made of, for example, a polyimide resin so as to have an appropriate elastic force that can securely contact the connection metal portion 1Ac with the spool holder 8. The conductor 1Ab is formed of, for example, Cu foil so that the connection metal portion 1Ac that connects the metal wire 2A of the covering wire 2 and the connection metal portion 1Ac that contacts the spool holder 8 can be reliably connected. Connection metal part 1A
c is formed of a conductive paste, solder, adhesive tape, or the like. The connection terminal 1A passes through a notch formed in the side surface (flange) of the spool 1 through a metal wire 2A at the end of the covered wire 2 opposite to the side supplied to the bonding portion 3. That is, it is configured to connect the metal wire 2A at the winding start end of the covered wire 2. The metal wire 2A is connected by the connection metal portion 1Ac of the connection terminal 1A. The insulator 2B on the surface of the metal wire 2A at the beginning of the winding of the covered wire 2 is heated or chemically removed. The connection terminal 1A, that is, the metal wire 2A of the covering wire 2 is connected to the reference potential GND through the spool holder 8, its rotation shaft 8A and the main body 9. The reference potential GND is the same as the reference potential GND of the arc generation circuit 11. Thus, the reference potential G is applied to the spool 1.
A connection terminal 1A for connection to the ND is provided, and a metal wire 2A at the start end of the covering wire 2 is connected to the connection terminal, so that the reference potential G is passed through the spool holder 8 or the like.
Since it can be connected to ND, the metal wire 2A of the covered wire 2 can be connected to the reference potential GND. The metal wire 2A of the covering wire 2 can be connected to the reference potential GND only by connecting the metal wire 2A at the start end of the covering wire 2 to the connection terminal 1A of the spool 1. The operation for connecting the metal wire 2A of the wire 2 to the reference potential GND can be simplified. Further, in the bonding apparatus using the spool 1 having the connection terminal 1A, since the metal wire 2A of the covering wire 2 is connected to the reference potential GND, the arc electrode 10 is connected to the supply side at the time of ball formation. Since the potential difference between the covered wire 2 and the metal wire 2A can be sufficiently ensured and arc generation can be improved, a ball is surely formed on the metal wire 2A at the leading end of the covered wire 2 on the supply side. be able to. Further, since the metal wire 2A of the covered wire 2 can be set to the reference potential GND, it is possible to prevent charges from being charged up in the floating capacitance of the metal wire 2A of the covered wire 2. That is, an excessive voltage flows into the input / output circuit of the semiconductor chip 12A at the time of the first bonding in which the metal wire 2A at the supply end of the coated wire 2 on which the ball is formed is connected to the external terminal 12Aa of the semiconductor chip 12A. Can be prevented, so that electrostatic destruction can be prevented. The above-described covered wire 2 is made of a metal wire 2A.
In order to clarify whether or not the insulator 2B exists on the surface of any of the above, any of them may be colored. (Embodiment 2) Embodiment 2 is another embodiment of the present invention in which the shape of the connection terminal provided on the spool is changed. A spool used in the bonding apparatus according to the second embodiment of the present invention is shown in FIG. As shown in FIG. 6, the spool 1 according to the second embodiment has a ring-shaped connection terminal 1A on a side surface. The connection terminal 1A reliably connects the metal wire 2A of the coating wire 2 to the reference potential GND through the connection member 9A with the reference electron GND even when the spool 1 rotates.
It is configured so that it can be connected to. As described above, by providing the ring-shaped connection terminal 1A on the spool 1, substantially the same effect as in the first embodiment can be obtained. (Embodiment 3) The spool of this embodiment is such that, instead of the terminal 1A in FIG. 6, an aluminum body whose surface is exposed as a result of removing the alumite surface treatment of this portion is used as a connection terminal. is there. That is, in the spool in which the entire surface of the aluminum main body is anodized, a part of the alumite outside the side wall of the spool is removed to expose the aluminum main body surface, and the exposed aluminum formation region is covered with the metal wire of the covering wire. A spool serving as a connection terminal for connecting to a reference potential, wherein a metal wire from which a coating film at a winding start end of the coating wire has been removed is connected to the connection terminal. The connection terminals are formed in a dot shape, a ring shape, or the like. Therefore, this spool can provide substantially the same effect as the spool of the second embodiment. Although the invention made by the inventor has been specifically described based on the embodiment, the invention is not limited to the embodiment and can be variously modified without departing from the gist of the invention. Of course, it is. For example, in the present invention, the reference potential GND is
By changing the voltage applied to the arc electrode 10, it is not always necessary to set the voltage to 0 [V]. The present invention can be applied to an ultrasonic bonding technique using a covered wire. The effects obtained by the representative inventions among the inventions disclosed in the present application will be briefly described.
It is as follows. In the spool around which the covering wire is wound, the metal wire of the covering wire can be connected to a reference potential via a spool holder. In a bonding apparatus using a covered wire, ball bonding can be reliably performed.
Further, electrostatic breakdown of the semiconductor device can be prevented. Furthermore, since either the surface of the metal wire or the insulator of the coated wire is colored, it is easy to confirm whether or not the coating has been removed, and it is possible to prevent erroneous bonding and to achieve a highly reliable bonding. An apparatus can be provided.

【図面の簡単な説明】 【図１】本発明の実施の形態１であるボンディング装置
の概略構成図である。 【図２】前記ボンディング装置に配置された半導体装置
の断面図である。 【図３】図２に示す半導体装置の要部断面図である。 【図４】図１に示すボンディング装置に設けられたスプ
ールの要部斜視図である。 【図５】図４に示すスプールの要部拡大斜視図である。 【図６】本発明の実施の形態２であるボンディング装置
に使用されるスプールの要部斜視図である。 【符号の説明】 １ スプール １Ａ 接続端子 ２ 被覆ワイヤ ２Ａ 金属線 ２Ｂ 絶縁体 ７ ボンディングツール ８ スプールホルダ １０ アーク電極 １１ アーク発生回路 １２ 半導体装置 １２Ａ 半導体チップ １２Ｄ リード ＧＮＤ 基準電位BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic configuration diagram of a bonding apparatus according to a first embodiment of the present invention. FIG. 2 is a sectional view of a semiconductor device arranged in the bonding apparatus. FIG. 3 is a sectional view of a main part of the semiconductor device shown in FIG. 2; FIG. 4 is a perspective view of a main part of a spool provided in the bonding apparatus shown in FIG. 1; FIG. 5 is an enlarged perspective view of a main part of the spool shown in FIG. 4; FIG. 6 is a perspective view of a main part of a spool used in a bonding apparatus according to a second embodiment of the present invention. [Description of Signs] 1 Spool 1A Connection terminal 2 Insulated wire 2A Metal wire 2B Insulator 7 Bonding tool 8 Spool holder 10 Arc electrode 11 Arc generation circuit 12 Semiconductor device 12A Semiconductor chip 12D Lead GND Reference potential

Claims (1)

(57)【特許請求の範囲】 １．半導体チップの外部端子とインナーリード部とをワ
イヤにより電気的に接続するボンディング装置であっ
て、金属線が 絶縁体により被覆された被覆ワイヤが巻き付け
られ、前記被覆ワイヤの巻き始め端部の金属線に電気的
に接続される接続端子を有するスプールと、 前記被覆ワイヤをその供給側から繰り出して前記外部端
子と前記インナーリード部との間に前記金属線を接続す
るボンディングツールと、 アーク発生回路に接続され、前記被覆ワイヤの供給側先
端部にボールを形成するアーク電極と、 前記スプールを回転自在に支持し、前記接続端子に電気
的に接続されるとともに、基準電位端子に電気的に接続
されるスプールホルダとを有し、 前記被覆ワイヤは前記接続端子と前記スプールホルダと
を介して前記基準電位端子に接続され、 前記金属線の表面または前記絶縁体のいずれかが着色さ
れている ことを特徴とするボンディング装置。(57) [Claims] An external terminal and an inner lead portion of the semiconductor chip to a bonding apparatus to electrically connect the wires, coated wires metal wire is covered with an insulating material is wound around a metal wire winding start end portion of the coated wire a bonding tool for connecting the spool, the metal wire between the coated wire and the external terminal feeding from the supply side to the inner lead portion having a connection terminal electrically connected to, the arcing circuit An arc electrode that is connected and forms a ball at the supply-side tip of the coated wire; rotatably supports the spool; and is electrically connected to the connection terminal and electrically connected to a reference potential terminal. and a spool holder that, the coated wire is connected to said reference potential terminal via the said spool holder with the connection terminal Either of coloring of the surface or the insulator of the metal wire
Bonding apparatus characterized by being.
JP8111033A 1996-05-02 1996-05-02 Bonding equipment Expired - Lifetime JP2749557B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8111033A JP2749557B2 (en) 1996-05-02 1996-05-02 Bonding equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8111033A JP2749557B2 (en) 1996-05-02 1996-05-02 Bonding equipment

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP62014036A Division JP2644485B2 (en) 1987-01-26 1987-01-26 spool

Publications (2)

Publication Number Publication Date
JPH08330349A JPH08330349A (en) 1996-12-13
JP2749557B2 true JP2749557B2 (en) 1998-05-13

Family

ID=14550709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8111033A Expired - Lifetime JP2749557B2 (en) 1996-05-02 1996-05-02 Bonding equipment

Country Status (1)

Country Link
JP (1) JP2749557B2 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61102042A (en) * 1984-10-25 1986-05-20 Matsuda Denshi Kogyo Kk Manufacture of conductive spool for bonding wire

Also Published As

Publication number Publication date
JPH08330349A (en) 1996-12-13

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