JP2000114659A - 発光素子の光出力を測定するシステム、及びそれに使用される回路 - Google Patents

発光素子の光出力を測定するシステム、及びそれに使用される回路

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Publication number
JP2000114659A
JP2000114659A JP11276175A JP27617599A JP2000114659A JP 2000114659 A JP2000114659 A JP 2000114659A JP 11276175 A JP11276175 A JP 11276175A JP 27617599 A JP27617599 A JP 27617599A JP 2000114659 A JP2000114659 A JP 2000114659A
Authority
JP
Japan
Prior art keywords
laser
photodetector
light emitting
type
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP11276175A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000114659A5 (https=
Inventor
Dubravko I Babic
ダブラヴコ・アイ・バビック
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/167,961 external-priority patent/US6222202B1/en
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JP2000114659A publication Critical patent/JP2000114659A/ja
Publication of JP2000114659A5 publication Critical patent/JP2000114659A5/ja
Withdrawn legal-status Critical Current

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  • Semiconductor Lasers (AREA)
JP11276175A 1998-10-06 1999-09-29 発光素子の光出力を測定するシステム、及びそれに使用される回路 Withdrawn JP2000114659A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US09/167,961 US6222202B1 (en) 1998-10-06 1998-10-06 System and method for the monolithic integration of a light emitting device and a photodetector for low bias voltage operation
US183,030 1998-10-06
US167,961 1998-10-06
US09/183,030 US6236671B1 (en) 1998-10-06 1998-10-29 System and method for the monolithic integration of a light emitting device and a heterojunction phototransistor for low bias voltage operation

Publications (2)

Publication Number Publication Date
JP2000114659A true JP2000114659A (ja) 2000-04-21
JP2000114659A5 JP2000114659A5 (https=) 2006-11-09

Family

ID=26863666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11276175A Withdrawn JP2000114659A (ja) 1998-10-06 1999-09-29 発光素子の光出力を測定するシステム、及びそれに使用される回路

Country Status (1)

Country Link
JP (1) JP2000114659A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005045049A (ja) * 2003-07-23 2005-02-17 Seiko Epson Corp 光素子およびその製造方法、光モジュール、ならびに光モジュールの駆動方法
JP2005217147A (ja) * 2004-01-29 2005-08-11 Seiko Epson Corp 受発光素子アレイ、光モジュール、および光伝達装置
JP2006504111A (ja) * 2002-10-22 2006-02-02 ユニヴァーシティー カレッジ カーディフ コンサルタンツ リミテッド 半導体光学装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006504111A (ja) * 2002-10-22 2006-02-02 ユニヴァーシティー カレッジ カーディフ コンサルタンツ リミテッド 半導体光学装置
JP2005045049A (ja) * 2003-07-23 2005-02-17 Seiko Epson Corp 光素子およびその製造方法、光モジュール、ならびに光モジュールの駆動方法
US7446293B2 (en) 2003-07-23 2008-11-04 Seiko Epson Corporation Electro-optical element and method for manufacturing thereof, optical module and method for driving thereof
JP2005217147A (ja) * 2004-01-29 2005-08-11 Seiko Epson Corp 受発光素子アレイ、光モジュール、および光伝達装置

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