JP2000101229A - Thermall pressure-contact device for covered wire - Google Patents

Thermall pressure-contact device for covered wire

Info

Publication number
JP2000101229A
JP2000101229A JP10288803A JP28880398A JP2000101229A JP 2000101229 A JP2000101229 A JP 2000101229A JP 10288803 A JP10288803 A JP 10288803A JP 28880398 A JP28880398 A JP 28880398A JP 2000101229 A JP2000101229 A JP 2000101229A
Authority
JP
Japan
Prior art keywords
welding
covered wire
electrodes
wire
heated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10288803A
Other languages
Japanese (ja)
Inventor
Atsushi Ito
厚 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Avionics Co Ltd
Original Assignee
Nippon Avionics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Avionics Co Ltd filed Critical Nippon Avionics Co Ltd
Priority to JP10288803A priority Critical patent/JP2000101229A/en
Publication of JP2000101229A publication Critical patent/JP2000101229A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • H01L2224/78302Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85203Thermocompression bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85238Applying energy for connecting using electric resistance welding, i.e. ohmic heating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01042Molybdenum [Mo]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]

Abstract

PROBLEM TO BE SOLVED: To provide a thermal pressure-contact device for a covered wire with which the removal of an attachment is not required at all and handling is simplified. SOLUTION: A thermal pressure-contact part is composed of welder electrodes 15 and 15 and a ribbon member 14 to be heated by Joule heat generated by a welding current to flow to these welder electrodes 15 and 15 between the welder electrodes 15 and 15. The welder electrodes 15 and 15 are made of metal such as copper alloy and their lower surface form the supporting surface of the ribbon member 14. Next, the welder electrodes 15 and 15 are moved downward and a part 14a to be heated of the ribbon member 14 is contacted to a covered wire 6. In such a state, the welding current is let flow from a welder power source to the electrodes 15 and 15, and Joule heat is generated between the electrodes. When the part 14a is heated by this heat, an insulated cover 9 and solder 7 are molten by that heat, and a part 5 to be bonded and a core wire 8 of the covered wire 6 are thermally pressure-contacted and electrically connected.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、パルスヒート方式
によって被覆線を回路基板等の被接合部に熱圧着する装
置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for thermocompression-bonding a covered wire to a joint such as a circuit board by a pulse heating method.

【0002】[0002]

【従来の技術】この種の熱圧着装置は、薄膜基板やハー
ドディスク用の磁気ヘッドへのリード線の熱圧着、プリ
ント基板へのICリード等のリフロソルダリング、被覆
極微細線接合等を行う際に用いられている。図3は、こ
のような装置の熱圧着部の構成要素を示す図であり、モ
リブデン(Mo)、チタン(Ti)等の高抵抗材料によ
って板状に形成された加熱チップ2と、この加熱チップ
2の先端部に接続された熱電対3とを備えている。加熱
チップ2は厚さが0.8mm程度で、パルスヒート方式
によって加熱される。パルスヒート方式は、パルス状の
大電流を流し、この時発生するジュール熱を利用する加
熱方式である。被覆線6は直径が数10μm〜1mm
で、心線8の表面がウレタン樹脂等の絶縁皮膜9によっ
て被覆されている。被覆線6を熱圧着するには、回路基
板4に形成されているランド部等の被接合部5に予め半
田7をめっき等によって形成しておき、その上に接合す
べき被覆線6を載置する。しかる後、加熱チップ2の先
端を被覆線6に接触させてパルス状の大電流を100m
s〜数100msの間隔で流すと、加熱チップ2はジュ
ール熱により加熱され、絶縁皮膜9および半田7を溶融
し、被接合部5と被覆線6の心線8を熱圧着する。
2. Description of the Related Art This type of thermocompression bonding apparatus is used for performing thermocompression bonding of lead wires to a magnetic head for a thin film substrate or a hard disk, reflow soldering of an IC lead or the like to a printed board, bonding of coated ultrafine wires, and the like. Used. FIG. 3 is a diagram showing components of a thermocompression bonding section of such an apparatus. The heating chip 2 is formed in a plate shape from a high-resistance material such as molybdenum (Mo) or titanium (Ti). And a thermocouple 3 connected to the distal end of the thermocouple 3. The heating chip 2 has a thickness of about 0.8 mm and is heated by a pulse heating method. The pulse heating method is a heating method in which a large pulse-like current flows and Joule heat generated at this time is used. The coated wire 6 has a diameter of several tens μm to 1 mm.
Thus, the surface of the core wire 8 is covered with an insulating film 9 such as urethane resin. In order to thermocompression-bond the covered wire 6, a solder 7 is formed in advance on a portion 5 to be joined such as a land portion formed on the circuit board 4 by plating or the like, and the covered wire 6 to be joined is mounted thereon. Place. Thereafter, the tip of the heating tip 2 is brought into contact with the coated wire 6 to apply a large pulse current to 100 m.
When flowing at intervals of s to several hundreds of milliseconds, the heating chip 2 is heated by Joule heat to melt the insulating film 9 and the solder 7, and the bonded portion 5 and the core wire 8 of the covered wire 6 are thermocompression bonded.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、前述し
たような従来の熱圧着装置においては、加熱時に溶けた
絶縁皮膜9が加熱チップ2に焼き付いたり半田7が付着
して固化するため、このような付着物を取り除く必要が
あり、その除去作業(ドレッシング)が煩わしいという
問題点があった。特に、付着物の除去は削り取り作業で
あるため、何回もドレッシングしていると加熱チップ2
の先端部形状が変化し、適正な接合が行えなくなるた
め、新しいものと交換する必要がある。さらに、熱電対
3の寿命は数万回の熱圧着が限度で、耐久性が低く、ま
た応答性が悪いという問題点もあった。
However, in the conventional thermocompression bonding apparatus as described above, the insulating film 9 melted during heating is burned to the heating chip 2 or the solder 7 adheres and solidifies. There is a problem that it is necessary to remove the deposits, and the removal operation (dressing) is troublesome. In particular, since the removal of deposits is a shaving operation, if the dressing is performed many times, the heating tip 2
Since the shape of the tip portion changes, and proper joining cannot be performed, it is necessary to replace the tip with a new one. Furthermore, the life of the thermocouple 3 is limited to tens of thousands of thermocompression bonding, and there is a problem that durability is low and responsiveness is poor.

【0004】本発明は、上記課題を解決するためになさ
れたもので、同じパルスヒート方式でもリフロ・ソルダ
リング法の代わりにパラレル・ギャップ・ソルダリング
法を用い、溶接電極にリボン材を添接する方式を採用す
ることにより、付着物の除去作業を全く必要とせず取り
扱いが簡単な被覆線の熱圧着装置を提供することを目的
とする。
The present invention has been made in order to solve the above-mentioned problem. Even in the same pulse heating method, a parallel gap soldering method is used in place of a reflow soldering method to attach a ribbon material to a welding electrode. An object of the present invention is to provide a thermocompression bonding apparatus for a covered wire that does not require any operation for removing adhered substances and is easy to handle.

【0005】[0005]

【課題を解決するための手段】上記目的を達成するため
に、第1の発明は、被覆線を電気回路のランド部等の被
接合部に熱圧着する被覆線の熱圧着装置において、溶接
電流または溶接電圧をフィードバックして溶接電流また
は溶接電圧を制御する溶接電源と、高融点材料からなる
リボン材と、このリボン材の被加熱部を支持する溶接電
極とを備え、前記リボン材の被加熱部を前記被覆線に接
触させて前記溶接電源から供給される溶接電流により前
記溶接電極間に発生するジュール熱により前記被覆線と
前記被接合部を接合することを特徴とするものである。
In order to achieve the above object, a first aspect of the present invention is a coated wire thermocompression bonding apparatus for thermocompressing a coated wire to a joint such as a land of an electric circuit. Or a welding power source for controlling a welding current or a welding voltage by feeding back a welding voltage; a ribbon material made of a high melting point material; and a welding electrode for supporting a heated portion of the ribbon material. A part is brought into contact with the covered wire, and the covered wire and the portion to be joined are joined by Joule heat generated between the welding electrodes by a welding current supplied from the welding power source.

【0006】また、第2の発明は、上記第1の発明にお
いて、溶接電極にはリボン材が添接される面にリボン材
を案内するガイド溝が形成されていることを特徴とする
ものである。
According to a second aspect of the present invention, in the first aspect, the welding electrode is provided with a guide groove for guiding the ribbon material on a surface to which the ribbon material is attached. is there.

【0007】本発明においては、リボン材は溶接電流が
流れる被加熱部として使用され、溶接電極に流れる溶接
電流により溶接電極間に発生するジュール熱によって加
熱され、被覆線と被接合部が接合される。リボン材は、
絶縁皮膜等が付着すると、繰り出されて新しいリボン部
分が被加熱部として使用される。
In the present invention, the ribbon material is used as a heated portion through which a welding current flows, and is heated by Joule heat generated between the welding electrodes by the welding current flowing through the welding electrode, so that the covered wire and the bonded portion are joined. You. The ribbon material
When the insulating film or the like adheres, the new ribbon portion is fed out and used as a heated portion.

【0008】[0008]

【発明の実施の形態】以下、図面を基に本発明について
詳細に説明する。図1は本発明の1実施形態を示す被覆
線の熱圧着装置の熱圧着部の構成要素を示す図、図2
(A)、(B)、(C)は溶接電極の要部の断面図、側
面図および底面図である。なお、従来技術の欄で示した
部材と同一のものについては同一符号を付与し、その説
明を適宜省略する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the drawings. FIG. 1 is a view showing components of a thermocompression bonding part of a thermocompression bonding apparatus for a covered wire according to an embodiment of the present invention.
(A), (B), (C) is a sectional view, a side view, and a bottom view of a main part of the welding electrode. The same members as those described in the section of the related art are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

【0009】これらの図において、熱圧着部は、溶接電
極15、15と、この溶接電極15、15に流れる溶接
電流により溶接電極15、15間に発生するジュール熱
によって加熱されるリボン材14とで概ね構成されてい
る。溶接電極15、15にはリボン材14の被加熱部1
4aを支持するガイド溝17が設けられている。この溶
接に使用される溶接電源(図示せず。)は抵抗溶接電源
として公知のものであり、溶接電流または溶接電圧をフ
ィードバックすることによって制御されるもので、リボ
ン材14の被加熱部14aが摂氏500〜600度程度
に加熱されるように溶接電流が制御される。この被加熱
部14aの温度は溶接電流または溶接電圧によって正確
に制御される。
In these figures, a thermocompression bonding portion includes a welding electrode 15 and a ribbon material 14 heated by Joule heat generated between the welding electrodes 15 and 15 by a welding current flowing through the welding electrodes 15 and 15. It is generally composed of The heated electrode 1 of the ribbon material 14 is
A guide groove 17 for supporting 4a is provided. A welding power source (not shown) used for this welding is known as a resistance welding power source, and is controlled by feeding back a welding current or a welding voltage. The welding current is controlled so as to be heated to about 500 to 600 degrees Celsius. The temperature of the heated portion 14a is accurately controlled by the welding current or the welding voltage.

【0010】リボン材14は熱容量の大きい高融点材
料、例えばモリブデン、タングステン等によって厚さが
数10μm、幅が1mm程度の寸法をもってリボン状に
形成されており、図示しない供給リールから間欠的に繰
り出され巻取りリールに巻き取られるように構成されて
いる。
The ribbon material 14 is formed of a high melting point material having a large heat capacity, for example, molybdenum, tungsten, or the like, in a ribbon shape having a thickness of several tens of μm and a width of about 1 mm, and is intermittently fed from a supply reel (not shown). It is configured to be wound on a take-up reel.

【0011】溶接電極15、15は銅合金等の金属製
で、下面が前記リボン材14の支持面を形成している。
溶接電極15、15の下面に前記リボン材14を案内す
る2つのガイド溝17、17が外側方向に180度位相
を異ならせて形成されている。ガイド溝17は、溶接電
極15の外周面下部をリボン材14の幅より若干広い幅
で斜めに切り落とすことにより形成されている。
The welding electrodes 15, 15 are made of a metal such as a copper alloy, and the lower surface forms a support surface of the ribbon material 14.
Two guide grooves 17, 17 for guiding the ribbon material 14 are formed on the lower surfaces of the welding electrodes 15, 15 with a phase difference of 180 degrees outward. The guide groove 17 is formed by diagonally cutting off the lower portion of the outer peripheral surface of the welding electrode 15 with a width slightly larger than the width of the ribbon material 14.

【0012】このような構成からなる熱圧着装置におい
て、被覆線6を熱圧着するには、まず被覆線6を被接合
部5の上に載置する。次に溶接電極15、15を下降さ
せてリボン材14の被加熱部14aを被覆線6に接触さ
せる。この状態で溶接電極15、15に溶接電源から溶
接電流を流し、溶接電極間にジュール熱を発生させ、こ
の熱により被加熱部14aを加熱すると、その熱により
絶縁被覆9および半田7が溶融し、被接合部5と被覆線
6の心線8が熱圧着し電気的に接続される。
In the thermocompression bonding apparatus having such a configuration, in order to thermocompression-bond the covered wire 6, the covered wire 6 is first placed on the portion 5 to be joined. Next, the welding electrodes 15, 15 are lowered to bring the heated portion 14 a of the ribbon material 14 into contact with the covered wire 6. In this state, a welding current is passed from the welding power source to the welding electrodes 15 and 15 to generate Joule heat between the welding electrodes. When the heated portion 14a is heated by this heat, the insulating coating 9 and the solder 7 are melted by the heat. The bonded part 5 and the core wire 8 of the covered wire 6 are thermo-compressed and electrically connected.

【0013】この熱圧着において、溶融した半田7およ
び絶縁皮膜9の一部はリボン材14の被加熱部14aに
付着して固化し次の熱圧着に影響を及ぼすが、リボン材
14を1回ないし数回の熱圧着毎に供給リールから一定
量繰り出して新たな部分を被加熱部14aとする。した
がって、リボン材14に付着した付着物の除去作業が不
要となり、熱圧着を連続して行うことができる。そし
て、リボン材14を使い終わったら、次の新しいリボン
材と交換する。したがって、従来の加熱チップ2を用い
た熱圧着装置に比べて、装置の取り扱いが容易である。
また、溶接電流または溶接電圧により加熱温度を制御し
ているので、熱電対が不要である。
In this thermocompression bonding, the melted solder 7 and a part of the insulating film 9 adhere to the heated portion 14a of the ribbon material 14 and solidify to affect the next thermocompression bonding. A new portion is fed out from the supply reel by a fixed amount every several or several times of thermocompression bonding to form a heated portion 14a. Therefore, there is no need to remove the substances attached to the ribbon material 14, and the thermocompression bonding can be performed continuously. Then, when the use of the ribbon material 14 is completed, the ribbon material is replaced with the next new ribbon material. Therefore, the handling of the device is easier than that of a conventional thermocompression bonding device using the heating chip 2.
Further, since the heating temperature is controlled by the welding current or the welding voltage, a thermocouple is not required.

【0014】また、溶接電流または溶接電圧によるフィ
ードバック加熱制御は、従来の熱電対による被加熱部の
温度検出によるフィードバック加熱制御するのと比較し
て、応答性に優れるので極短時間の加熱で安定性のある
加熱ができ、回路基板4等の被覆線6が接合されるワー
クへの熱的影響を少なくすることができる。
In addition, feedback heating control based on welding current or welding voltage is superior in response to feedback heating control based on temperature detection of a portion to be heated by a conventional thermocouple, so that it is stable in an extremely short time of heating. Heating can be performed, and the thermal influence on the work to which the covered wire 6 such as the circuit board 4 is joined can be reduced.

【0015】[0015]

【発明の効果】以上説明したように、本発明になる被覆
線の熱圧着装置によれば、パラレル・ギャップ・ソルダ
リング法を用い、被覆線を加熱する加熱体として繰り出
されるリボン材を用いているので、絶縁皮膜等が付着し
てもその取り除き作業を行う必要がなく、連続的に接合
でき装置の取扱いが容易である。また、パラレル・ギャ
ップ・ソルダリング法によるリボン材の加熱は溶接電流
等のフィードバック制御により制御されるので、従来の
リフロ・ソルダリング法の熱電対による温度のフィード
バック制御に比べて応答性が良く極短時間の加熱で熱圧
着が可能となるので被覆線が接合されるワークへの熱的
影響を少なくすることができる。また、リボンガイドの
ガイド溝によってリボン材を安定に支持し案内すること
ができる。したがって作業性が良く、高信頼性の被覆線
の熱圧着が可能となる。
As described above, according to the coated wire thermocompression bonding apparatus according to the present invention, the parallel gap soldering method is used, and the ribbon material drawn out as a heating element for heating the coated wire is used. Therefore, even if an insulating film or the like adheres, there is no need to remove the insulating film and the like, and the device can be joined continuously and the device can be easily handled. In addition, since the heating of the ribbon material by the parallel gap soldering method is controlled by the feedback control of the welding current and the like, the response is better than the feedback control of the temperature by the thermocouple of the conventional reflow soldering method. Since thermocompression bonding can be performed by heating for a short time, it is possible to reduce the thermal effect on the workpiece to which the covered wire is joined. Further, the ribbon material can be stably supported and guided by the guide groove of the ribbon guide. Therefore, the workability is good, and the thermocompression bonding of the coated wire with high reliability becomes possible.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の1実施形態を示す被覆線の熱圧着装置
の熱圧着部の構成要素を示す図である。
FIG. 1 is a diagram showing components of a thermocompression bonding section of a covered wire thermocompression bonding apparatus according to an embodiment of the present invention.

【図2】(A)、(B)、(C)は溶接電極の要部の断
面図、側面図および底面図である。
FIGS. 2A, 2B, and 2C are a cross-sectional view, a side view, and a bottom view of a main part of a welding electrode.

【符号の説明】[Explanation of symbols]

2 加熱チップ 3 熱電対 4 回路基板 5 被接合部 6 被覆線 7 半田 8 心線 9 絶縁皮膜 14 リボン材 14a 被加熱部 15 溶接電極 17 ガイド溝 Reference Signs List 2 heating chip 3 thermocouple 4 circuit board 5 bonded part 6 covered wire 7 solder 8 core wire 9 insulating film 14 ribbon material 14a heated part 15 welding electrode 17 guide groove

─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───

【手続補正書】[Procedure amendment]

【提出日】平成10年11月27日(1998.11.
27)
[Submission date] November 27, 1998 (1998.11.
27)

【手続補正1】[Procedure amendment 1]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】図3[Correction target item name] Figure 3

【補正方法】追加[Correction method] Added

【補正内容】[Correction contents]

【図3】 従来の被覆線の熱圧着装置の熱圧着部の構成
要素を示す図である。
FIG. 3 is a view showing components of a thermocompression bonding section of a conventional coated wire thermocompression bonding apparatus.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 21/60 301 H01L 21/60 301A H01R 43/02 H01R 43/02 A H02G 1/12 303 H02G 1/12 303 ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 21/60 301 H01L 21/60 301A H01R 43/02 H01R 43/02 A H02G 1/12 303 H02G 1 / 12 303

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 被覆線を電気回路のランド部等の被接合
部に熱圧着する被覆線の熱圧着装置において、 溶接電流または溶接電圧をフィードバックして溶接電流
または溶接電圧を制御する溶接電源と、 高融点材料からなるリボン材と、 このリボン材の被加熱部を支持する溶接電極とを備え、 前記リボン材の被加熱部を前記被覆線に接触させて前記
溶接電源から供給される溶接電流により前記溶接電極間
に発生するジュール熱により前記被覆線と前記被接合部
を接合することを特徴とする被覆線の熱圧着装置。
1. A covered wire thermocompression bonding apparatus for thermocompression-bonding a covered wire to a joined portion such as a land of an electric circuit, comprising: A welding material supplied from the welding power source by contacting the heated portion of the ribbon material with the covering wire, the welding current being provided from a welding electrode for supporting the heated portion of the ribbon material; Wherein the covered wire and the portion to be joined are joined by Joule heat generated between the welding electrodes.
【請求項2】 請求項1記載の被覆線の熱圧着装置にお
いて、 溶接電極には、リボン材が添接される面にリボン材を案
内するガイド溝が形成されていることを特徴とする被覆
線の熱圧着装置。
2. The coated wire thermocompression bonding apparatus according to claim 1, wherein the welding electrode is provided with a guide groove for guiding the ribbon material on a surface to which the ribbon material is attached. Wire thermocompression device.
JP10288803A 1998-09-25 1998-09-25 Thermall pressure-contact device for covered wire Pending JP2000101229A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10288803A JP2000101229A (en) 1998-09-25 1998-09-25 Thermall pressure-contact device for covered wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10288803A JP2000101229A (en) 1998-09-25 1998-09-25 Thermall pressure-contact device for covered wire

Publications (1)

Publication Number Publication Date
JP2000101229A true JP2000101229A (en) 2000-04-07

Family

ID=17734945

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10288803A Pending JP2000101229A (en) 1998-09-25 1998-09-25 Thermall pressure-contact device for covered wire

Country Status (1)

Country Link
JP (1) JP2000101229A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002262430A (en) * 2001-02-28 2002-09-13 Star Micronics Co Ltd Structure and method for lead wire connection and cladding material for lead wire connection
WO2002102540A1 (en) * 2001-06-07 2002-12-27 Shitong Yang Spot welding machine capable of directly welding enamelled wires
JP2011028923A (en) * 2009-07-23 2011-02-10 Nippon Avionics Co Ltd Coated wire joining device and coated wire joining method
WO2012089159A1 (en) * 2010-12-31 2012-07-05 广州微点焊设备有限公司 Parallel electrode welding head
WO2012089163A1 (en) * 2010-12-31 2012-07-05 广州微点焊设备有限公司 Electric resistance welding parallel electrode welding head
CN103111742A (en) * 2013-02-26 2013-05-22 歌尔声学股份有限公司 Spot welding head for welding enamelled wires
KR101534319B1 (en) * 2014-05-22 2015-07-06 김인기 Apparatus for pressuring terminal and fixing part
CN112247307A (en) * 2020-10-09 2021-01-22 昆山联滔电子有限公司 Hot-press welding device and hot-press welding process

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002262430A (en) * 2001-02-28 2002-09-13 Star Micronics Co Ltd Structure and method for lead wire connection and cladding material for lead wire connection
WO2002102540A1 (en) * 2001-06-07 2002-12-27 Shitong Yang Spot welding machine capable of directly welding enamelled wires
GB2392122A (en) * 2001-06-07 2004-02-25 Shitong Yang Spot welding machine capable of directly welding enamelled wires
GB2392122B (en) * 2001-06-07 2005-06-29 Shitong Yang Micro Welder For Directly Welding Enabled Wires
JP2011028923A (en) * 2009-07-23 2011-02-10 Nippon Avionics Co Ltd Coated wire joining device and coated wire joining method
WO2012089159A1 (en) * 2010-12-31 2012-07-05 广州微点焊设备有限公司 Parallel electrode welding head
WO2012089163A1 (en) * 2010-12-31 2012-07-05 广州微点焊设备有限公司 Electric resistance welding parallel electrode welding head
CN103111742A (en) * 2013-02-26 2013-05-22 歌尔声学股份有限公司 Spot welding head for welding enamelled wires
KR101534319B1 (en) * 2014-05-22 2015-07-06 김인기 Apparatus for pressuring terminal and fixing part
CN112247307A (en) * 2020-10-09 2021-01-22 昆山联滔电子有限公司 Hot-press welding device and hot-press welding process

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