JP2000091366A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a semiconductor device having especially high level of integration, which can achieve the substantial compactness and thin size, and the manufacturing method thereof. SOLUTION: For this manufacturing method, at the conducting plate comprising a copper plate and the like, etching is performed so that the part corresponding to external electrode-terminal forming part 201 is made to remain on one side of a semiconductor chip-mounting region. The chip mounting and the remaining land undergo wire bonding. Resin sealing is performed. The external electrode-terminal forming part 201 is divided by cutting, and an L-shaped electrode is formed at the corner part of the resin. A pair of the semiconductor package elements formed in this way are stuck together, to obtain a semiconductor device. Or the device is formed in series as a integrated body, or it is stuck together and bonded as an integrated body.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device having a semiconductor chip mounted thereon and sealed with a resin.
And a semiconductor device.

[0002]

2. Description of the Related Art As an example of a conventional semiconductor device, there is a structure shown in FIG. In this technique, a semiconductor chip 2 is attached to a lead frame 1 as a conductive plate for a semiconductor device by an adhesive 3.
The semiconductor chip 2 and the lead frame 1 are connected using the conductive wires 4. Next, the semiconductor device 6 is manufactured by sealing the periphery of the chip with a resin 5 using a technique called transfer molding, and bending a portion of the lead frame 1 protruding from a side end surface of the sealing resin 5 into a crank shape.

[0003]

However, such a semiconductor device has the following problems.

That is, in order to use the transfer molding technique, a mold for molding and a driving device thereof, and a mold for bending the lead frame 1 and a driving device thereof are required. And In addition, since the lead frame 1 is bent for each semiconductor device, a large number of steps are required, and the semiconductor device becomes expensive. Further, since the lead frame 1 protrudes from the resin 5, the semiconductor device becomes large, and a large area is required on the substrate when mounted, and it is difficult to reduce the size of the product.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems of the prior art, and it is an object of the present invention to make a semiconductor device which can be made much smaller and thinner as compared with the conventional one, and in particular, a highly integrated semiconductor. An object of the present invention is to provide an apparatus and a method of manufacturing the same.

[0006]

In order to achieve the above-mentioned object, a semiconductor device according to the present invention is characterized in that an electrode of a semiconductor chip and an external electrode terminal are electrically sealed with a resin and the resin is sealed. Using a plurality of semiconductor packages in which the external electrode terminals are exposed and formed in an L-shape on a corner outer surface portion of a resin stopper, one exposed surface of the electrode forming the L-shape in each semiconductor package is the same. The semiconductor package is characterized in that it is bonded and integrated so as to be located on a plane. In this case,
It is desirable that the semiconductor chip has a memory circuit formed thereon. The semiconductor device may be configured such that a semiconductor chip or a die pad in a chip mounting region is exposed on an outer surface of a semiconductor package.

A semiconductor device according to another configuration is a semiconductor device on which a semiconductor chip on which a memory circuit is formed is mounted, in which an electrode of the semiconductor chip is electrically connected to an external electrode terminal. A plurality of semiconductor device constituent elements are connected and arranged to be resin-sealed, and the external electrode terminals are exposed and formed in an L-shape on corner outer surface portions of the sealing resin.

In a semiconductor device according to another configuration, a plurality of semiconductor device elements formed by electrically connecting an electrode of a semiconductor chip and an external electrode terminal are connected and sealed with a resin. A plurality of semiconductor package units each having the external electrode terminal exposed and formed in an L-shape on the outer surface of the corner of the resin are used, and one exposed surface of the electrode forming the L-shape in each semiconductor package unit is formed. The semiconductor package units are bonded and integrated so as to be located on the same plane.

A method for manufacturing a semiconductor device according to the present invention
A plurality of semiconductor device component regions are set on one conductive plate, and are arranged at least around the semiconductor chip mounting region in each region of the semiconductor device components on one surface of the conductive plate. An etching step of forming a thin portion around the external electrode terminal forming region, and a step of mounting a semiconductor chip on a semiconductor chip mounting region as the thin portion in each region of each semiconductor device component; A bonding step of electrically connecting the semiconductor chip to the external electrode terminal formation region, a resin sealing step of enclosing the semiconductor chip and the external electrode terminal on the semiconductor chip mounting surface side of the conductive plate; By grinding and removing at least a portion corresponding to a thin portion of the conductive plate from the non-etched surface side of the plate, the semiconductor chip mounting region and the external electrode formation region are removed. Forming a semiconductor package by separating the semiconductor chip mounting region and the external electrode forming region from each other, and then separating and separating the plurality of semiconductor device components into regions. Bonding and joining the semiconductor packages divided into device component units to integrate them. In this case, in the resin sealing step, it is preferable that all of the semiconductor chips mounted on the conductive plate be resin-sealed.

[0010] Still another method of manufacturing a semiconductor device is as follows.
A plurality of regions of semiconductor device components are set on one conductive plate, and external electrodes arranged on at least a periphery of a semiconductor chip mounting region in each region of the semiconductor device components on one surface of the conductive plate An etching step of forming a thin portion around the terminal forming region, and a step of mounting a semiconductor chip on a semiconductor chip mounting region as the thin portion in each region of each semiconductor device component; A bonding step of electrically connecting the external electrode terminal formation region to the external electrode terminal forming region; a resin sealing step of enclosing a semiconductor chip and external electrode terminals on the semiconductor chip mounting surface side of the conductive plate; By grinding and removing at least the thickness corresponding to the thin portion of the conductive plate from the non-etched surface side, the gap between the semiconductor chip mounting region and the external electrode formation region And separating the plurality of semiconductor device components into unit units, and cutting the external electrode terminal formation region in the unit in the thickness direction, thereby forming the external electrode terminals in the corner portions of the sealing resin. And a step of approaching an L-shape.

Further, in a method of manufacturing a semiconductor device according to another configuration, a plurality of regions of a semiconductor device component are set on one conductive plate, and the semiconductor device component is formed on one surface of the conductive plate. An etching step of forming a thin portion around the external electrode terminal forming region disposed at least around the semiconductor chip mounting region in each region, and forming the thin portion in each region of each semiconductor device component. Mounting the semiconductor chip on the semiconductor chip mounting area, bonding step for electrically connecting the semiconductor chip and the external electrode terminal formation area, and forming the semiconductor chip and the semiconductor chip on the semiconductor chip mounting surface side of the conductive plate. A resin sealing step of enclosing the external electrode terminals, and grinding and removing at least a portion corresponding to a thin portion of the conductive plate from the non-etched surface side of the conductive plate. Separating the semiconductor chip mounting region and the external electrode formation region from each other, performing a dividing process on the semiconductor device components in units of a plurality, and cutting the external electrode terminal formation region in the unit in the thickness direction. Accordingly, the method comprises the steps of: making the external electrode terminals face the L-shape at the corners of the sealing resin; and bonding and joining unit packages divided into semiconductor device units. And

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific embodiments of a method for manufacturing a semiconductor device and a semiconductor device according to the present invention will be described in detail with reference to the drawings.

FIG. 1 shows a manufacturing process of the semiconductor device according to the first embodiment, FIG. 2 shows a semiconductor device manufactured by the same method, and FIG. 3 is a front view showing a state where the semiconductor device is solder-mounted. Is shown.

First, a semiconductor device according to the first embodiment is shown in FIG. As shown, the semiconductor device 10
Is configured as a single semiconductor device by bonding a pair of semiconductor packages 12 together. The semiconductor package 12 is created as one chip size package (CSP), and a pair of manufactured semiconductor packages 12 are joined and integrated to create one semiconductor device 10.

First, the semiconductor package 12 is formed by sealing a semiconductor chip 16 with a resin 14. That is, the input / output electrode pads 18 of the semiconductor chip 16 and the external electrode terminals 20 arranged on one side of the chip 16 are electrically connected by the bonding wires 22. The semiconductor chip 16 is formed so as to cover the entire bonding side of the semiconductor chip 16 with resin and to expose the back surface of the chip 16 from the sealing resin 14.
The external electrode terminals 20 are formed so as to be exposed in an L-shape at a corner portion of one surface of the sealing resin 14 where a part of the chip 16 is exposed. A pair of such semiconductor packages 12 is prepared, and these are connected to the bonding wires 2.
The semiconductor device 10 is manufactured by adhesive bonding so that two sides face each other. At this time, the external electrode terminals 20 are joined and bonded to both edges of one plane of the semiconductor device 10 so as to be arranged.

A process for manufacturing such a semiconductor device 10 will be described with reference to FIG. First, as shown in FIG. 1 (1), this is for manufacturing a plurality of semiconductor devices at the same time, and is a conductive plate made of, for example, a copper plate having a plane area capable of forming a plurality of device components. Prepare 24. In this conductive plate 24, only the external electrode terminal forming region T arranged along one side of the semiconductor chip mounting region C for each device component is left as a land portion.
As shown in (2), a thin portion 26 having a surface layer removed by isotropic etching is formed around the thin portion 26, and the thin portion 26 is ground by grinding from the non-etched surface side to form the external electrode terminal formation region. T is set to a separable depth, and the lands are shared with the external electrode terminal forming portions of the adjacent package components.

In the conductive plate 24, the semiconductor chip 16
Is mounted on the thin portion 26, and the semiconductor chip 16 is mounted on both sides of the external electrode terminal forming portion 201. This mounting area is a part of the surface of the thin portion 26. External electrode terminal forming portion 20 which is a thick portion projecting portion
Reference numeral 1 denotes a portion connected from the input / output electrode pad 18 of the semiconductor chip 16 by a wire 22 or the like. The external electrode terminal forming portion 201 is thicker than the thin portion 26 so as to be an independent projection and is shared with an adjacent package component. 22 are set so as to secure a space for welding. In addition, as shown in FIG. 1C, the conductive plating 28 may be applied to part or all of the upper surface of the external electrode forming portion 201 to improve the bonding property at the time of bonding. .

Similarly, as shown in the sectional view of FIG. 1C, the semiconductor chip 16 is mounted on the die attaching portion (die pad) of the conductive plate 24 using an adhesive 30 or the like. As shown in FIG. 1 (4), the semiconductor chip 16
The input / output electrode pad 18 and the upper flat portion of the external electrode forming portion 201 of the conductive plate 24 are connected using the conductive wire 22.

Thereafter, as shown in FIG. 1 (5), the surface of the conductive plate 24 where the projections exist, that is, the semiconductor chip 1
The whole is sealed with the resin 14 so as to cover all of the die attaching portion (die pad), the external electrode forming portion 201, the semiconductor chip 16 and the conductive wire 22 on the mounting surface of No. 6. After sealing, the conductive plate 24 is ground (or cut) from the thin-walled portion 26 side, that is, from the surface that is not resin-sealed, that is, the non-etched surface side, from the surface where the conductive plate 24 is exposed. The grinding at that time is performed until the thin portion 24 is completely removed. That is, the external electrode terminals 20 are ground to a position shown on the ground surface 32 in the thickness direction in which the external electrode terminals 20 are completely completely electrically independent. In this case, since the bottom surface of the semiconductor chip 16 is located below the upper surface of the external electrode terminal forming portion 201, a part of the lower surface of the semiconductor chip 16 is ground when grinding to the grinding surface 32. (See FIG. 1 (5)).

By the way, as is apparent from FIG. 1 (5), in this embodiment, since a plurality of package element units are formed at the same time in a plane, the dividing position in the thickness direction for separating these is separated from the external electrode. The dividing line 34 and the adjacent semiconductor chip 1 are separated so as to divide the terminal forming portion 201 from the center.
The dividing lines 36 between the six are set. As a result, an L-shaped external electrode terminal 20 as shown in FIG. 2 is formed at one corner of each semiconductor package 12. As shown, in the embodiment, the L-shaped external electrode terminal 20 is
Although it depends on the etching depth, it is set to be long on the side end surface side along the long side of the rectangular parallelepiped package, and to shorten the surface exposed on the back surface of the package, that is, the surface on which the semiconductor chip is exposed.

In the above embodiment, the external electrode terminal forming portion 201 is arranged only on one side of the semiconductor chip 16 and is wire-bonded to the semiconductor chip 16 for resin sealing. The package elements are set at such positions that the package elements are divided by dividing the external electrode terminal forming portions 201 and dividing the chips 16 by dividing lines 34 and 36 that separate the device units along the thickness direction.

By such a polishing and dividing process, FIG.
As shown in (6), many semiconductor packages 12 are created. In the package 12, the external electrode terminals 20 are arranged and formed only on one side edge of the package 12. The semiconductor package 12 thus manufactured
As a pair, these are back to back,
That is, the surfaces subjected to the wire bonding are joined and integrated by the adhesive 38 to complete the semiconductor device 10.

As shown in FIG. 3, such a semiconductor device 10 has the advantage that a package can be erected and mounted on a substrate, and the mounting area on the substrate 40 can be reduced. In particular, since the corner L-shaped external electrode terminal 20 has a large welding area when soldered, the fillet 4
2 can be formed reliably and stable mounting can be performed.

As described above, in this embodiment, high integration of the semiconductor device can be realized, and since the individual packages are formed and then joined together, it is possible to select good products and then join them, thereby improving the yield. High effect. In addition, FIG. 2 shows an example in which the electrode 54 of the semiconductor chip 52 is applied to a two-row structure. However, recently, there is a chip electrode having a single center line. This makes distributed processing possible.

Next, FIGS. 4 and 5 show an explanatory view of a method of manufacturing a semiconductor device according to the second embodiment and a perspective view of a semiconductor device 50 manufactured by the method. This second
The semiconductor device 50 according to the first embodiment includes a semiconductor chip 52
A plurality of semiconductor package elements 60 configured by electrically connecting the electrodes 54 and the external electrode terminals 56 with wires 58 are connected in series and sealed with a resin 62, and the outside of the corner of the sealing resin 62. The external electrode terminal 5 is provided on the surface.
6 is formed to be exposed in an L-shape.

In such a semiconductor device 50, as shown in FIG. 4, the conductive plate 64 is divided into a plurality of regions, and a semiconductor package element 60 is formed in each of the divided regions. At this time, the semiconductor package elements 60 are arranged in such a manner that the respective elements 60 are arranged on the target with the common external electrode terminal forming portion 501 interposed therebetween, and are arranged continuously in series.
Are arranged in a matrix. Chip 5
2. The process of connecting the external electrode terminals 56, these conductive wires 58, and encapsulating the resin is performed through the same steps as those shown in FIG. This embodiment differs from the embodiment shown in FIG. 1 in that a plurality of semiconductor package elements 60 are simultaneously arranged in a matrix. It is desirable that the method for forming the plurality of etchings is performed as isotropic etching. Since the etching is isotropic etching, the etching region becomes more hollow as it goes deeper. Therefore, the non-etched region that is standing upright from the thin portion protrudes toward the surface side and is in an overhang state. For this reason, resin sealing is performed in a later process,
The equivalent diameter on the side embedded in the resin becomes large, and this acts as an anchor. Therefore, even if the thin portion is ground and removed and left as an island, it is prevented from falling out of the resin. Semiconductor package elements arranged in this manner. 60 two 1
The semiconductor devices 50 are separated according to the separation lines 66 and 68 shown in FIG. 4 so that the semiconductor device 50 is configured as a set of units. Note that one set of package elements 60
The number of package elements 60 is not limited to two, and may be two or more.
Can be a set of units.
Thereby, the semiconductor device 50 shown in FIG. 5 can be manufactured. Further, an example formed by integrally joining the semiconductor devices 50 of FIG. 5 is a semiconductor device 70 of FIG.
With this configuration, the completed semiconductor device 50,
70 can be used as it is in a board socket as a memory unit.

According to such an embodiment, the memory unit can be used as an extremely miniaturized memory instead of the memory unit used for the conventional memory board. Also,
When used for a memory card, a conventional memory board is mounted on a board after manufacturing a package to complete the memory card. In this embodiment, the memory card is completed simultaneously with the manufacture of the package, so that the process is simplified. There is.

[0028]

As described above, according to the present invention,
A so-called half-etching is performed on a conductive plate made of a copper plate or the like in advance so as to leave a portion corresponding to the external electrode terminal forming portion on one side of the semiconductor chip mounting region, and the chip mounting and the remaining land are wire-bonded, and a resin is formed. Sealing is performed, the external electrode terminal forming portion is divided, and a pair of semiconductor package elements that allow an L-shaped electrode to be formed at the corner portion of the resin are bonded to one semiconductor device, or integrally molded in series, Alternatively, since the semiconductor device is bonded and integrated by bonding it, a highly integrated semiconductor device in which a chip size package is bonded and connected can be obtained. Such a small and thin semiconductor device can be manufactured by a simple method while the package size of this type of semiconductor device is significantly reduced and thinned.

[Brief description of the drawings]

FIG. 1 is a process chart of a method for manufacturing a semiconductor device according to a first embodiment.

FIG. 2 is a cross-sectional view and a perspective view of a semiconductor device manufactured by the same method.

FIG. 3 is an explanatory diagram of a mounting state of the semiconductor device.

FIG. 4 is a plan view for explaining a manufacturing method according to a second embodiment, in which semiconductor package elements are arranged on a conductive plate.

FIG. 5 is a perspective view of a semiconductor device manufactured by the same method.

FIG. 6 is a perspective view of a semiconductor device according to a third embodiment.

FIG. 7 is a sectional view of a conventional semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Semiconductor device 12 Semiconductor package 14 Sealing resin 16 Semiconductor chip 18 I / O electrode pad 20 External electrode terminal 201 External electrode terminal formation part 22 Bonding wire 24 Conductive plate 26 Thin part 28 Conductive plating 30 Adhesive 32 Grinding surface 34 minutes Disconnection 36 disconnection 38 adhesive 40 mounting substrate 42 solder fillet 50 semiconductor device of second embodiment 52 semiconductor chip 54 electrode pad 56 external electrode terminal 58 wire 60 semiconductor package element 62 sealing resin 64 conductive plate 66 disconnection 68 disconnection 68 70 Semiconductor Device of Third Embodiment 74 Discharge Unit

Claims (9)

[Claims] An electrode is formed between the electrode of the semiconductor chip and an external electrode terminal portion so as to establish electrical continuity, and the external electrode terminal is exposed and formed in an L-shape on a corner outer surface portion of the sealing resin. Using a plurality of semiconductor packages, the semiconductor packages are bonded and integrated so that one exposed surface of the electrode forming the L-shape in each semiconductor package is located on the same plane. Characteristic semiconductor device. 2. The semiconductor device according to claim 1, wherein the semiconductor chip has a memory circuit formed thereon. 3. The semiconductor device according to claim 1, wherein the semiconductor device has a semiconductor chip or a die pad in a chip mounting area exposed on an outer surface of a semiconductor package. 4. A semiconductor device on which a semiconductor chip on which a memory system circuit is formed is mounted, wherein a plurality of semiconductor device components configured by electrically connecting electrodes of the semiconductor chip and external electrode terminals are provided. A semiconductor device in which the external electrode terminals are exposed and formed in an L-shape on a corner outer surface portion of the sealing resin while being connected and arranged to seal the resin. 5. A semiconductor device comprising a plurality of semiconductor device elements which are electrically connected between an electrode of a semiconductor chip and an external electrode terminal portion, are connected and sealed, and are resin-sealed. Using a plurality of semiconductor package units having the external electrode terminals exposed in an L-shape, one exposed surface of the electrode forming the L-shape in each semiconductor package unit is positioned on the same plane. A semiconductor device, wherein the semiconductor package units are bonded and integrated. 6. A region for a plurality of semiconductor device components is set on one conductive plate, and at least a periphery of a semiconductor chip mounting region in each region of the semiconductor device components on one surface of the conductive plate. An etching step of forming a thin portion around the external electrode terminal forming region to be disposed, and a step of mounting a semiconductor chip on the semiconductor chip mounting region as the thin portion in each region of each semiconductor device component A bonding step of electrically connecting the semiconductor chip and the external electrode terminal formation region, and a resin sealing step of including the semiconductor chip and the external electrode terminals on the semiconductor chip mounting surface side of the conductive plate; By grinding and removing at least a portion corresponding to a thin portion of the conductive plate from the non-etched surface side of the conductive plate, the semiconductor chip mounting area and the external power supply are removed. Forming a semiconductor chip mounting region and an external electrode forming region by grinding and removing the thin-walled portion, and separating and separating the semiconductor device mounting regions for each of a plurality of semiconductor device components. A method of manufacturing a semiconductor device, comprising: a step of forming a semiconductor package; and a step of laminating and joining semiconductor packages divided into constituent elements of a semiconductor device. 7. The method of manufacturing a semiconductor device according to claim 6, wherein in the resin sealing step, all of the semiconductor chips mounted on the conductive plate are sealed with resin. 8. A region of a plurality of semiconductor device components is set on one conductive plate, and at least one semiconductor device component region is surrounded on at least a periphery of a semiconductor chip mounting region on each surface of the semiconductor device components on one surface of the conductive plate. An etching step of forming a thin portion around the external electrode terminal forming region to be disposed, and a step of mounting a semiconductor chip on the semiconductor chip mounting region as the thin portion in each region of each semiconductor device component A bonding step of electrically connecting the semiconductor chip and the external electrode terminal formation region, and a resin sealing step of including the semiconductor chip and the external electrode terminals on the semiconductor chip mounting surface side of the conductive plate; By grinding and removing at least a portion corresponding to a thin portion of the conductive plate from the non-etched surface side of the conductive plate, the semiconductor chip mounting area and the external power supply are removed. A step of separating the formation regions from each other, and dividing the semiconductor device component into a plurality of units, and cutting the external electrode terminal formation region in the unit in the thickness direction to form a corner portion of the sealing resin. Exposing the external electrode terminals to an L-shape. 9. A region of a plurality of semiconductor device components is set on one conductive plate, and at least a periphery of a semiconductor chip mounting region in each region of the semiconductor device components on one surface of the conductive plate. An etching step of forming a thin portion around the external electrode terminal forming region to be disposed, and a step of mounting a semiconductor chip on the semiconductor chip mounting region as the thin portion in each region of each semiconductor device component A bonding step of electrically connecting the semiconductor chip and the external electrode terminal formation region, and a resin sealing step of including the semiconductor chip and the external electrode terminals on the semiconductor chip mounting surface side of the conductive plate; By grinding and removing at least a portion corresponding to a thin portion of the conductive plate from the non-etched surface side of the conductive plate, the semiconductor chip mounting area and the external power supply are removed. A step of separating the formation regions from each other, and dividing the semiconductor device component into a plurality of units, and cutting the external electrode terminal formation region in the unit in the thickness direction to form a corner portion of the sealing resin. A step of exposing external electrode terminals to an L-shape, and a step of bonding and integrating package units divided into individual semiconductor device units.