JP2000087243A - Powder raw material vaporizing device and plasma mocvd device using it - Google Patents
Powder raw material vaporizing device and plasma mocvd device using itInfo
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- JP2000087243A JP2000087243A JP10259881A JP25988198A JP2000087243A JP 2000087243 A JP2000087243 A JP 2000087243A JP 10259881 A JP10259881 A JP 10259881A JP 25988198 A JP25988198 A JP 25988198A JP 2000087243 A JP2000087243 A JP 2000087243A
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、有機金属化合物等
からなる粉末原材料を加熱し、昇華して用いる気相成長
法（ＭＯＣＶＤ、プラズマＭＯＣＶＤ等）を採用して金
属酸化物等の薄膜を製造する際に使用される粉末原材料
気化装置およびそれを用いたプラズマＭＯＣＶＤ装置に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a thin film of a metal oxide or the like by employing a vapor phase growth method (MOCVD, plasma MOCVD, etc.) using a powder raw material composed of an organometallic compound or the like and heating and sublimating the material. The present invention relates to an apparatus for evaporating powder raw materials used in the process and a plasma MOCVD apparatus using the same.
【０００２】[0002]
【従来の技術】近年における電子機器の小型軽量化及び
高性能化に伴っては誘電体や磁性体、超伝導体などとし
て機能する金属酸化物の薄膜を作製することが行われて
おり、この種の金属酸化物薄膜を作製するに際しては、
真空度が比較的低い条件下でも高品質薄膜を高速度で作
製することができ、かつ、コストを考慮したうえでの量
産性にも優れた気相成長法（ＭＯＣＶＤ法、プラズマＭ
ＯＣＶＤ法）を採用するのが一般的となっている。2. Description of the Related Art In recent years, as electronic devices have become smaller and lighter and have higher performance, metal oxide thin films functioning as dielectrics, magnetic materials, superconductors, and the like have been manufactured. When producing a kind of metal oxide thin film,
A vapor phase growth method (MOCVD method, plasma M method) that can produce a high-quality thin film at a high speed even under a condition of a relatively low degree of vacuum and is excellent in mass productivity in consideration of cost.
It is common to employ an OCVD method.
【０００３】そして、このＭＯＣＶＤ法にあっては、飽
和蒸気圧が高くて常温下では気体または液体である原材
料を用いたうえで金属酸化物薄膜を作製することが行わ
れているが、ＭｇＯなどの誘電体やＹ−Ｂａ−Ｃｕ−Ｏ
系高温超伝導体などのような金属酸化物薄膜を作製する
場合には、飽和蒸気圧が低くて常温下では固体の原材料
を気化させたうえで金属酸化物薄膜を作製する必要があ
るとされている。[0003] In this MOCVD method, a metal oxide thin film is produced using a raw material which has a high saturated vapor pressure and is a gas or a liquid at room temperature at room temperature. Dielectric and Y-Ba-Cu-O
When fabricating metal oxide thin films such as high-temperature superconductors, it is necessary to vaporize solid raw materials at room temperature due to low saturation vapor pressure before producing metal oxide thin films. ing.
【０００４】従来、固体である原材料を気化させる際に
は、例えば図２に示すような粉末原材料気化装置が使用
されることになる。この粉末原材料気化装置は、粉末原
材料１を蓄える原材料供給容器２と原材料供給装置３と
キャリアガス供給系４を具備した原材料供給室５と、原
材料供給室５から供給される粉末原材料１が通過する原
材料通路６と、この原材料通路６の排出端部から供給さ
れた粉末原材料１を加熱して気化させる原材料気化台７
及び原材料気化台７を回転させる原材料気化台回転機構
８を具備した原材料気化室９とから粉末原材料気化装置
は構成される。Conventionally, when a solid raw material is vaporized, for example, a powder raw material vaporizing apparatus as shown in FIG. 2 is used. In this powder raw material vaporizer, a raw material supply chamber 5 having a raw material supply container 2 for storing the powdery raw material 1, a raw material supply device 3 and a carrier gas supply system 4, and a powder raw material 1 supplied from the raw material supply chamber 5 pass through. A raw material passage 6 and a raw material vaporizing table 7 for heating and vaporizing the powder raw material 1 supplied from the discharge end of the raw material passage 6.
A raw material vaporizing chamber 9 provided with a raw material vaporizing table rotating mechanism 8 for rotating the raw material vaporizing table 7 constitutes a powder raw material vaporizing apparatus.
【０００５】そして、原材料気化台７で気化した原材料
ガスは、キャリアガスによって原材料ガス供給系１０を
通って、基板１１、基板加熱ホルダ１２、プラズマ発生
用電極１３、排気系１４、ＲＦ電源１５を具備した成膜
室１６に供給される。また、成膜室１６には反応ガス供
給系１７により反応ガスも供給される。The raw material gas vaporized by the raw material vaporizing table 7 passes through the raw material gas supply system 10 by the carrier gas, and is supplied to the substrate 11, the substrate heating holder 12, the plasma generating electrode 13, the exhaust system 14, and the RF power supply 15. It is supplied to the film forming chamber 16 provided. Further, a reactive gas is also supplied to the film forming chamber 16 by a reactive gas supply system 17.
【０００６】本装置により以下のように粉末原材料１を
気化し、成膜室１６へ供給し、成膜が実施される。粉末
原材料１が原材料供給容器２に充填された後、原材料供
給室５、原材料気化室９は原材料通路６、原材料ガス供
給系１０を通じて、成膜室１６に具備された排気系１４
により１Ｐａ以下の真空度まで真空排気される。[0006] The powder raw material 1 is vaporized and supplied to the film forming chamber 16 by the present apparatus as described below, and the film is formed. After the powder raw material 1 is filled in the raw material supply container 2, the raw material supply chamber 5 and the raw material vaporization chamber 9 pass through the raw material passage 6 and the raw material gas supply system 10 to the exhaust system 14 provided in the film forming chamber 16.
Is evacuated to a degree of vacuum of 1 Pa or less.
【０００７】所定の真空度に達した後、原材料気化台
７、原材料気化室９内壁、原材料ガス供給系１０を所定
の温度に加熱する。このとき原材料通路６は加熱する
と、粉末原材料１を供給した際、原材料通路６で気化し
てしまうため、未加熱であるが、原材料気化台７、原材
料気化室９から輻射、熱伝導により若干温度上昇はして
いる。また、基板１１、成膜室１６内壁、反応ガス供給
系１７も加熱する。After reaching a predetermined degree of vacuum, the raw material vaporizing table 7, the inner wall of the raw material vaporizing chamber 9, and the raw material gas supply system 10 are heated to a predetermined temperature. At this time, when the raw material passage 6 is heated, when the powder raw material 1 is supplied, the raw material passage 6 is vaporized in the raw material passage 6, so that the raw material passage 6 is not heated. It is rising. Further, the substrate 11, the inner wall of the film formation chamber 16, and the reaction gas supply system 17 are also heated.
【０００８】所定の温度に加熱されたら、キャリアガス
供給系４より未加熱の窒素ガスを供給、反応ガス供給１
７系より酸素ガスを供給する。そして成膜室１６の排気
系１４により成膜室１６の圧力を所定の圧力に調整す
る。When heated to a predetermined temperature, an unheated nitrogen gas is supplied from a carrier gas supply system 4 and a reaction gas supply 1
Oxygen gas is supplied from system 7. Then, the pressure in the film formation chamber 16 is adjusted to a predetermined pressure by the exhaust system 14 in the film formation chamber 16.
【０００９】以上の設定の後、原材料供給装置３を駆動
させ原材料供給容器２から粉末原材料１を所定の速度で
供給する。原材料供給容器２から落とされた粉末原材料
１は原材料通路６を通り、原材料気化室９内の原材料気
化台７に供給される。After the above setting, the raw material supply device 3 is driven to supply the powder raw material 1 from the raw material supply container 2 at a predetermined speed. The powder raw material 1 dropped from the raw material supply container 2 passes through a raw material passage 6 and is supplied to a raw material vaporizing table 7 in a raw material vaporizing chamber 9.
【００１０】原材料気化台７で加熱され気化した原材料
ガスはキャリアガス供給系４からの窒素ガスにより原材
料ガス供給系１０を通り成膜室１６へ運ばれ、プラズマ
１８および基板１１の表面温度の作用で基板１１上に薄
膜が形成される。The raw material gas heated and vaporized by the raw material vaporizing table 7 is carried to the film forming chamber 16 through the raw material gas supply system 10 by the nitrogen gas from the carrier gas supply system 4 and acts on the plasma 18 and the surface temperature of the substrate 11. Thus, a thin film is formed on the substrate 11.
【００１１】[0011]
【発明が解決しようとする課題】しかしながら前記従来
の粉末原材料気化装置においては、原材料気化室９にお
いて原材料気化７台で加熱され気化した原材料ガスの一
部は、原材料通路６の排出端近傍に拡散する。原材料通
路６は加熱されていないため、原材料ガスは原材料通路
の内壁、外壁の表面で冷却され固着する。また、固着に
より、原材料粉１が原材料通路６を通過する際、内壁で
引っかかりやすくなり、安定して連続的に原材料気化台
７に粉末原材料１の供給が行えなくなるため、安定した
成膜が行えなくなる。However, in the conventional powder raw material vaporizer, a part of the raw material gas heated and vaporized by the seven raw material vaporizers in the raw material vaporization chamber 9 diffuses near the discharge end of the raw material passage 6. I do. Since the raw material passage 6 is not heated, the raw material gas is cooled and fixed on the surfaces of the inner and outer walls of the raw material passage. In addition, due to the sticking, when the raw material powder 1 passes through the raw material passage 6, the raw material powder 1 is likely to be caught on the inner wall, and the stable supply of the raw material powder 1 to the raw material vaporizing table 7 cannot be performed stably. Disappears.
【００１２】また、粉末原材料１を気化させる原材料気
化台回転機構８を具備した原材料気化台７は、回転する
ため、ゴム等を材質としたオイルシ−ルにより原材料気
化室９と大気側の機密性を保持している。このオイルシ
−ルは熱に弱いため、原材料気化台７からの熱伝導を除
去するため周囲より冷却されており、このため原材料気
化台７がシ−ルされている原材料気化室９の壁付近は常
温に近い温度で保持されている。The raw material vaporizing table 7 provided with a raw material vaporizing table rotating mechanism 8 for vaporizing the powder raw material 1 is rotated, so that the raw material vaporizing chamber 9 is sealed from the atmosphere by an oil seal made of rubber or the like. Holding. Since this oil seal is vulnerable to heat, it is cooled from the surroundings in order to remove heat conduction from the raw material vaporizing table 7, so that the vicinity of the wall of the raw material vaporizing chamber 9 where the raw material vaporizing table 7 is sealed is located. It is kept at a temperature close to room temperature.
【００１３】このため、気化した原材料ガスが、拡散
し、シ−ル部近傍に拡散したものは原材料気化台７、お
よび原材料気化室９の温度が低いシ−ル部近傍で冷却さ
れ、固体に戻り固着する。これが続くと、シ−ル部の損
傷によるリ−ク、原材料気化台回転機構の損傷を招き、
粉末原材料気化装置の安定な運転ができなくなる。また
これは、成膜室に供給される原材料ガスの現象につなが
り利用効率が低くなる。For this reason, the vaporized raw material gas is diffused and diffused in the vicinity of the seal portion. The raw material gas is cooled in the vicinity of the raw material vaporization table 7 and the seal portion where the temperature of the raw material vaporization chamber 9 is low, and becomes solid. Return and stick. If this continues, leakage due to damage to the seal portion and damage to the rotating mechanism of the raw material vaporizer will be caused.
The stable operation of the powder raw material vaporizer cannot be performed. In addition, this leads to a phenomenon of the raw material gas supplied to the film formation chamber, and the utilization efficiency is reduced.
【００１４】本発明は、この点に鑑みなされたもので、
安定して連続的に原材料ガスを発生させることが可能で
あり、また原材料の利用効率を高め、基板上に均一な金
属酸化物を成膜することができる粉末原材料気化装置の
提供を目的としている。The present invention has been made in view of this point.
It is an object of the present invention to provide a powder raw material vaporizer capable of generating a raw material gas stably and continuously, increasing the utilization efficiency of the raw material, and forming a uniform metal oxide film on a substrate. .
【００１５】[0015]
【課題を解決するための手段】本発明の粉末原材料気化
装置は、粉末原材料を供給する機構を具備した原材料供
給室と、粉末原材料供給室により供給される粉末原材料
が通過する原材料通路と、原材料通路の排出端部から供
給された前記原材料を加熱して気化させる原材料気化台
が設置された原材料気化室を備え、原材料通路の内壁温
度を原材料気化台の所定の温度以上の高い温度に設定す
ることを特徴とする。According to the present invention, there is provided a powder raw material vaporizing apparatus comprising: a raw material supply chamber having a mechanism for supplying a powder raw material; a raw material passage through which the powder raw material supplied by the powder raw material supply chamber passes; A raw material vaporization chamber provided with a raw material vaporization table for heating and vaporizing the raw material supplied from the discharge end of the passage; and setting an inner wall temperature of the raw material passage to a higher temperature than a predetermined temperature of the raw material vaporization table. It is characterized by the following.
【００１６】また、粉末原材料を気化させるために原材
料気化室内に設けられた原材料気化台の下部もしくは周
囲より加熱されたガスを導入することを特徴とする。[0016] Further, in order to vaporize the powder raw material, a heated gas is introduced from below or around a raw material vaporizing table provided in the raw material vaporizing chamber.
【００１７】また、本発明の上記粉末原材料気化装置を
用いたプラズマＭＯＣＶＤ装置は、原材料気化台を１９
０〜２６０度の範囲に温度調節し、原材料通路の内壁温
度を２７０℃以上に温度調節し、粉末原材料としてマグ
ネシウムアセチルアセトナ−トを用い、酸化マグネシウ
ム膜を形成すること特徴とする。Further, in the plasma MOCVD apparatus using the above-mentioned powder raw material vaporizing apparatus of the present invention, the raw material vaporizing table is set to 19
The temperature is controlled within the range of 0 to 260 ° C., the temperature of the inner wall of the raw material passage is controlled to 270 ° C. or more, and magnesium acetylacetonate is used as a powder raw material to form a magnesium oxide film.
【００１８】[0018]
【発明の実施の形態】以下、本発明の実施の形態を図面
に基づいて説明する。図１は本発明の粉末原材料気化装
置の要部構成とその工程を示す概略断面図である。従来
と同じ、構成要素には同一番号を付加する。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic cross-sectional view showing a main part configuration and a process of a powder raw material vaporizing apparatus of the present invention. The same numbers are given to the constituent elements as in the related art.
【００１９】図１に示すように、粉末原材料１を供給す
る原材料供給容器２と原材料供給装置３とキャリアガス
供給系４を具備した原材料供給室５と、原材料供給室５
から供給される粉末原材料１が通過する加熱機構を具備
した原材料通路１９と、この原材料通路１９の排出端部
から供給された粉末原材料１を加熱して気化させる原材
料気化台７、原材料気化台回転機構８、キャリアガス供
給系（２）２０を具備した原材料気化室９とから粉末原
材料気化装置は構成される。As shown in FIG. 1, a raw material supply chamber 5 having a raw material supply container 2 for supplying a powdery raw material 1, a raw material supply device 3, and a carrier gas supply system 4, a raw material supply chamber 5
Raw material passage 19 provided with a heating mechanism through which the powder raw material 1 supplied from the raw material passes, the raw material vaporizer 7 for heating and vaporizing the powder raw material 1 supplied from the discharge end of the raw material passage 19, and the rotation of the raw material vaporizer. The raw material vaporizing apparatus 9 includes the mechanism 8 and the raw material vaporizing chamber 9 provided with the carrier gas supply system (2) 20.
【００２０】また、粉末原材料気化装置から供給される
原材料ガスおよびキャリアガスは原材料ガス供給系１０
により、基板１１、基板加熱ホルダ１２、プラズマ発生
用電極１３、排気系１４を具備した成膜室１６に供給さ
れる。また、同時に反応性ガス供給系１０により反応性
ガスも供給される。The raw material gas and the carrier gas supplied from the powder raw material vaporizer are supplied to the raw material gas supply system 10.
Thereby, the substrate 11, the substrate heating holder 12, the plasma generating electrode 13, and the film forming chamber 16 including the exhaust system 14 are supplied. At the same time, a reactive gas is also supplied by the reactive gas supply system 10.
【００２１】本装置により以下のように粉末原材料とし
てマグネシウムアセチルアセトナ−トを用いて酸化マグ
ネシウム膜をプラズマＭＯＣＶＤ法により形成する場合
について説明する。A case in which a magnesium oxide film is formed by a plasma MOCVD method using magnesium acetylacetonate as a powder raw material by the present apparatus as described below will be described.
【００２２】粉末原材料１（マグネシウムアセチルアセ
トナ−ト）を原材料供給容器２に充填した後、原材料供
給室５、原材料気化室９は原材料ガス供給系１０を通じ
て、成膜室１６の排気系１４により１Ｐａ以下の真空度
まで真空排気される。After the powdery raw material 1 (magnesium acetylacetonate) is filled in the raw material supply container 2, the raw material supply chamber 5 and the raw material vaporization chamber 9 pass through the raw material gas supply system 10 and the exhaust system 14 of the film formation chamber 16. It is evacuated to a degree of vacuum of 1 Pa or less.
【００２３】本実施例では、成膜室１６の排気系１４に
より真空排気するが、原材料ガス供給系１０を閉じて、
成膜室１６の排気系１４とは別に真空排気系を原材料気
化室９に設置して真空排気しても良い。所定の真空度に
達した後、原材料気化台７、原材料気化室９内壁、原材
料ガス供給系１０、成膜室１６内壁を２００℃に加熱す
る。In this embodiment, vacuum exhaust is performed by the exhaust system 14 of the film forming chamber 16, but the raw material gas supply system 10 is closed,
A vacuum evacuation system may be provided in the raw material vaporization chamber 9 separately from the evacuation system 14 of the film formation chamber 16 to perform evacuation. After reaching a predetermined degree of vacuum, the raw material vaporizing table 7, the inner wall of the raw material vaporizing chamber 9, the raw material gas supply system 10, and the inner wall of the film forming chamber 16 are heated to 200 ° C.
【００２４】このとき、加熱機構を具備した原材料通路
１９の温度を原材料気化台７の温度より８０℃高い２８
０℃に設定する。また、基板１１は、基板加熱ホルダに
より４００℃、成膜室１６内壁は２００℃に加熱する。
さらに、キャリアガス供給系（２）２０および反応性ガ
ス供給系１７の配管も２００℃に加熱する。At this time, the temperature of the raw material passage 19 provided with the heating mechanism is increased by 80 ° C. higher than the temperature of the raw material vaporizing table 28.
Set to 0 ° C. The substrate 11 is heated to 400 ° C. by the substrate heating holder, and the inner wall of the film forming chamber 16 is heated to 200 ° C.
Further, the pipes of the carrier gas supply system (2) 20 and the reactive gas supply system 17 are also heated to 200 ° C.
【００２５】所定の温度に加熱保持したら、キャリアガ
ス供給系４より未加熱の窒素ガスを５０ｃｃｍ、キャリ
アガス供給系（２）２０より配管温度により加熱された
窒素ガス２０ｃｃｍ、反応ガス供給系１７より配管温度
により加熱された酸素ガスを１００ｃｃｍ供給する。そ
して成膜室１６の排気系１４により成膜室１６の圧力を
１００Ｐａに調整する。After heating and holding at a predetermined temperature, 50 ccm of unheated nitrogen gas is supplied from the carrier gas supply system 4, 20 ccm of nitrogen gas heated at the pipe temperature from the carrier gas supply system (2) 20, and from the reaction gas supply system 17. The oxygen gas heated by the pipe temperature is supplied at 100 ccm. Then, the pressure in the film formation chamber 16 is adjusted to 100 Pa by the exhaust system 14 in the film formation chamber 16.
【００２６】以上の設定の後、原材料供給装置３を駆動
させ原材料供給容器２から粉末原材料１を１ｇ／分の速
度で供給する。原材料供給容器２ら落とされた粉末原材
料１は加熱機構を具備した原材料通路１９を通り、原材
料気化室９内の原材料気化台７に供給される。このとき
原材料通路１９の内壁温度を、原材料気化台７の設定温
度より高い２８０℃としているため、原材料通路１９に
粉末原材料１が落とされたとき粉末原材料１はすぐ気化
せず、原材料通路１９内壁との摩擦で落ちることを妨げ
られることなく、弾むようにして、原材料気化台７に供
給される。After the above settings, the raw material supply device 3 is driven to supply the raw material powder 1 from the raw material supply container 2 at a rate of 1 g / min. The powder raw material 1 dropped from the raw material supply container 2 is supplied to the raw material vaporizing table 7 in the raw material vaporizing chamber 9 through a raw material passage 19 having a heating mechanism. At this time, since the temperature of the inner wall of the raw material passage 19 is set to 280 ° C., which is higher than the set temperature of the raw material vaporizer 7, when the powder raw material 1 is dropped into the raw material passage 19, the powder raw material 1 does not immediately evaporate. The raw material is supplied to the raw material vaporizing table 7 so as to bounce without being hindered by the friction with the raw material.
【００２７】これは、熱した熱い鉄板に水滴を落とすと
弾いて蒸発しにくくなる現象のように、粉末原材料の表
面は気化したガスにつつまれ、内部は気化しにくくなっ
ているためと考えられる。This is considered to be because the surface of the powder raw material is wrapped in vaporized gas and the inside is hardly vaporized, as in a phenomenon in which water drops are dropped on a heated hot iron plate and become difficult to evaporate. .
【００２８】このように推察される現象により、粉末原
材料１は原材料通路１９で妨げられることなく、原材料
気化台７に供給される。原材料気化台７の温度は原材料
通路１９の温度より低く設定しているため、温度が高く
ない鉄板に水滴を落としたとき水滴が鉄板上に広がり、
すぐ気化するように、原材料気化台７に上で気化してい
く。Due to the supposed phenomenon, the powder raw material 1 is supplied to the raw material vaporizing table 7 without being hindered by the raw material passage 19. Since the temperature of the raw material vaporization table 7 is set lower than the temperature of the raw material passage 19, when the water drops are dropped on an iron plate whose temperature is not high, the water droplets spread on the iron plate,
It is vaporized on the raw material vaporizing table 7 so as to be vaporized immediately.
【００２９】また、原材料通路１９は原材料気化台７よ
り温度を高く設定しているため、原材料気化台７で気化
した原材料ガスが原材料通路１９近傍に拡散しても固着
することはない。Further, since the temperature of the raw material passage 19 is set higher than that of the raw material vaporizing table 7, even if the raw material gas vaporized in the raw material vaporizing table 7 diffuses in the vicinity of the raw material passage 19, it does not adhere.
【００３０】原材料気化台７による加熱で気化した原材
料ガスは、成膜室１６の排気系１４の真空排気、および
キャリアガス供給系４、キャリアガス供給系（２）２０
により供給される窒素により成膜室１６へ安定して連続
的に送られる。このとき従来は気化したガスは拡散し、
原材料気化台回転機構８のシ−ル部等の温度の低い部分
に固着し、安定な原材料気化台の駆動および原材料の利
用効率が悪かったが、キャリアガス供給系（２）２０が
原材料気化台７の下部にキャリアガスを供給するため、
原材料気化台７により気化した原材料ガスは原材料気化
７台下部に拡散せずに、効率よく成膜室１６に供給され
る。The raw material gas vaporized by heating by the raw material vaporizing table 7 is evacuated from the exhaust system 14 of the film forming chamber 16, and the carrier gas supply system 4, the carrier gas supply system (2) 20
And is continuously and stably sent to the film forming chamber 16 by the nitrogen supplied by the above. At this time, conventionally, the vaporized gas diffuses,
Although the raw material vaporizing table is fixed to a low temperature portion such as a seal portion of the rotating mechanism 8 and the driving efficiency of the raw material vaporizing table and the use efficiency of the raw material are low, the carrier gas supply system (2) 20 is In order to supply the carrier gas to the lower part of 7,
The raw material gas vaporized by the raw material vaporizing stage 7 is efficiently supplied to the film forming chamber 16 without diffusing to the lower part of the raw material vaporizing stage 7.
【００３１】安定して連続的に供給される原材料ガスは
成膜室１６において反応性ガスとともに、プラズマ発生
用電極１３により発生したプラズマ１８および加熱され
た基板１１との作用で、基板１１上に酸化マグネシウム
膜を形成できる。The raw material gas supplied stably and continuously is supplied to the substrate 11 by the action of the plasma 18 generated by the plasma generating electrode 13 and the heated substrate 11 together with the reactive gas in the film forming chamber 16. A magnesium oxide film can be formed.
【００３２】なお、本実施例においては反応ガスを原材
料ガスを供給する供給系とは別に設けて成膜室１６へガ
スを供給したが、成膜室へ供給する前に原材料ガスと反
応ガスを混合してから供給しても良い。In this embodiment, the reaction gas is supplied to the film forming chamber 16 separately from the supply system for supplying the raw material gas. You may supply after mixing.
【００３３】[0033]
【発明の効果】以上のように本発明によれば、原材料通
路の内壁温度を原材料気化台の所定の温度以上の高い温
度に設定すること、また、粉末原材料を気化させるため
に原材料気化室内に設けられた原材料気化台の下部もし
くは周囲より加熱されたガスを導入することにより、安
定して連続した原材料ガスの供給が実現でき、また発生
した原材料ガスを無駄なく、成膜部へ供給できるため、
安定した膜の製造を実現できる。As described above, according to the present invention, the inner wall temperature of the raw material passage is set to a high temperature equal to or higher than the predetermined temperature of the raw material vaporizing table, and the raw material vaporizing chamber is vaporized to vaporize the powder raw material. By introducing a heated gas from below or around the provided raw material vaporizer, stable and continuous supply of raw material gas can be realized, and the generated raw material gas can be supplied to the film forming unit without waste. ,
A stable film can be manufactured.
【図１】本発明の一実施の形態にかかる粉末原料気化装
置の全体構成を簡略化して示す縦断面図FIG. 1 is a longitudinal sectional view schematically showing the entire configuration of a powder raw material vaporizing apparatus according to an embodiment of the present invention.
【図２】従来の粉末原料気化装置の全体構成を簡略化し
て示す縦断面図FIG. 2 is a longitudinal sectional view schematically showing the entire configuration of a conventional powder raw material vaporizer.
１ 粉末原材料 ２ 原材料供給容器 ３ 原材料供給装置 ４ キャリアガス供給系（１） ５ 原材料供給室 ７ 原材料気化台 ８ 原材料気化台回転機構 ９ 原材料気化室 １０ 原材料ガス供給系 １１ 基板 １２ 基板加熱ホルダ １３ プラズマ発生用電極 １４ 排気系 １５ ＲＦ電源 １６ 成膜室 １７ 反応ガス供給系 １８ プラズマ １９ 加熱機構を具備した原材料通路 ２０ キャリアガス供給系（２） DESCRIPTION OF SYMBOLS 1 Powder raw material 2 Raw material supply container 3 Raw material supply device 4 Carrier gas supply system (1) 5 Raw material supply room 7 Raw material vaporization table 8 Raw material vaporization table rotation mechanism 9 Raw material vaporization room 10 Raw material gas supply system 11 Substrate 12 Substrate heating holder 13 Plasma Generation electrode 14 Exhaust system 15 RF power supply 16 Film formation chamber 17 Reaction gas supply system 18 Plasma 19 Raw material passage with heating mechanism 20 Carrier gas supply system (2)
Claims (3)
材料供給室と、前記粉末原材料供給室により供給される
前記粉末原材料が通過する原材料通路と、前記原材料通
路の排出端部から供給された前記粉末原材料を加熱して
気化させる原材料気化台が設置された原材料気化室を備
え、前記原材料通路の内壁温度を前記原材料気化台の所
定の温度以上の高い温度に設定することを特徴とする粉
末原材料気化装置。1. A raw material supply chamber provided with a mechanism for supplying a powder raw material, a raw material passage through which the powder raw material supplied by the powder raw material supply chamber passes, and the raw material passage supplied from a discharge end of the raw material passage. A raw material vaporizing chamber provided with a raw material vaporizing table for heating and vaporizing the powder raw material, wherein an inner wall temperature of the raw material passage is set to a temperature higher than a predetermined temperature of the raw material vaporizing table. Vaporizer.
化室内に設けられた原材料気化台の下部もしくは周囲よ
り加熱されたガスを導入することを特徴とする粉末原材
料気化装置。2. A powder raw material vaporizer characterized by introducing a heated gas from below or around a raw material vaporizer provided in a raw material vaporization chamber to vaporize the powder raw material.
装置を用いたプラズマＭＯＣＶＤ装置であって、前記原
材料気化台を１９０〜２６０度の範囲に温度調節し、前
記原材料通路の内壁温度を２７０℃以上に温度調節し、
前記粉末原材料としてマグネシウムアセチルアセトナ−
トを用い、酸化マグネシウム膜を形成すること特徴とす
るプラズマＭＯＣＶＤ装置。3. A plasma MOCVD apparatus using the powder raw material vaporizer according to claim 1 or 2, wherein the temperature of the raw material vaporizer is adjusted to a range of 190 to 260 degrees, and the inner wall temperature of the raw material passage is set to 270. Adjust the temperature to over ℃,
Magnesium acetylacetona as the powder raw material
A plasma MOCVD apparatus characterized in that a magnesium oxide film is formed by using a metal oxide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25988198A JP3508566B2 (en) | 1998-09-14 | 1998-09-14 | Powder raw material vaporizer and plasma MOCVD apparatus using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25988198A JP3508566B2 (en) | 1998-09-14 | 1998-09-14 | Powder raw material vaporizer and plasma MOCVD apparatus using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000087243A true JP2000087243A (en) | 2000-03-28 |
| JP3508566B2 JP3508566B2 (en) | 2004-03-22 |
Family
ID=17340247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25988198A Expired - Fee Related JP3508566B2 (en) | 1998-09-14 | 1998-09-14 | Powder raw material vaporizer and plasma MOCVD apparatus using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3508566B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6626999B1 (en) * | 1999-07-13 | 2003-09-30 | Micron Technology, Inc. | Vapor forming devices |
-
1998
- 1998-09-14 JP JP25988198A patent/JP3508566B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6626999B1 (en) * | 1999-07-13 | 2003-09-30 | Micron Technology, Inc. | Vapor forming devices |
| US6796313B2 (en) | 1999-07-13 | 2004-09-28 | Micron Technology, Inc. | Methods of cleaning vaporization surfaces |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3508566B2 (en) | 2004-03-22 |
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