JP2000058619A - 基板処理装置及び基板処理方法 - Google Patents

基板処理装置及び基板処理方法

Info

Publication number
JP2000058619A
JP2000058619A JP10224694A JP22469498A JP2000058619A JP 2000058619 A JP2000058619 A JP 2000058619A JP 10224694 A JP10224694 A JP 10224694A JP 22469498 A JP22469498 A JP 22469498A JP 2000058619 A JP2000058619 A JP 2000058619A
Authority
JP
Japan
Prior art keywords
substrate
wafer
transfer
unit
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10224694A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000058619A5 (enExample
Inventor
Kazuhiro Shino
和弘 示野
Takeshi Yoshioka
健 吉岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Kokusai Denki Electric Inc
Original Assignee
Hitachi Ltd
Kokusai Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Kokusai Electric Co Ltd filed Critical Hitachi Ltd
Priority to JP10224694A priority Critical patent/JP2000058619A/ja
Publication of JP2000058619A publication Critical patent/JP2000058619A/ja
Priority to US09/790,615 priority patent/US20010050146A1/en
Publication of JP2000058619A5 publication Critical patent/JP2000058619A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP10224694A 1998-08-07 1998-08-07 基板処理装置及び基板処理方法 Pending JP2000058619A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10224694A JP2000058619A (ja) 1998-08-07 1998-08-07 基板処理装置及び基板処理方法
US09/790,615 US20010050146A1 (en) 1998-08-07 2001-02-23 Substrate processing apparatus and substrate processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10224694A JP2000058619A (ja) 1998-08-07 1998-08-07 基板処理装置及び基板処理方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2008136537A Division JP4599431B2 (ja) 2008-05-26 2008-05-26 基板処理装置及び半導体装置の製造方法
JP2009093095A Division JP2009152649A (ja) 2009-04-07 2009-04-07 ウェーハの搬送方法

Publications (2)

Publication Number Publication Date
JP2000058619A true JP2000058619A (ja) 2000-02-25
JP2000058619A5 JP2000058619A5 (enExample) 2005-09-08

Family

ID=16817783

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10224694A Pending JP2000058619A (ja) 1998-08-07 1998-08-07 基板処理装置及び基板処理方法

Country Status (2)

Country Link
US (1) US20010050146A1 (enExample)
JP (1) JP2000058619A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004200669A (ja) * 2002-12-02 2004-07-15 Rorze Corp ミニエンバイロメント装置、薄板状物製造システム及び清浄容器の雰囲気置換方法
JP2024026171A (ja) * 2013-08-12 2024-02-28 アプライド マテリアルズ インコーポレイテッド ファクトリインターフェースの環境制御を伴う基板処理のシステム、装置、及び方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3950299B2 (ja) * 2001-01-15 2007-07-25 東京エレクトロン株式会社 基板処理装置及びその方法
AU2002343583A1 (en) * 2001-10-29 2003-05-12 Genus, Inc. Chemical vapor deposition system
US7153362B2 (en) * 2002-04-30 2006-12-26 Samsung Electronics Co., Ltd. System and method for real time deposition process control based on resulting product detection
JP2007088398A (ja) * 2004-12-14 2007-04-05 Realize Advanced Technology Ltd 洗浄装置、この洗浄装置を用いた洗浄システム、及び被洗浄基板の洗浄方法
US10359743B2 (en) 2014-11-25 2019-07-23 Applied Materials, Inc. Substrate processing systems, apparatus, and methods with substrate carrier and purge chamber environmental controls
JP6459462B2 (ja) * 2014-12-11 2019-01-30 東京エレクトロン株式会社 リーク判定方法、基板処理装置及び記憶媒体

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004200669A (ja) * 2002-12-02 2004-07-15 Rorze Corp ミニエンバイロメント装置、薄板状物製造システム及び清浄容器の雰囲気置換方法
JP2024026171A (ja) * 2013-08-12 2024-02-28 アプライド マテリアルズ インコーポレイテッド ファクトリインターフェースの環境制御を伴う基板処理のシステム、装置、及び方法
JP7736765B2 (ja) 2013-08-12 2025-09-09 アプライド マテリアルズ インコーポレイテッド ファクトリインターフェースの環境制御を伴う基板処理のシステム、装置、及び方法

Also Published As

Publication number Publication date
US20010050146A1 (en) 2001-12-13

Similar Documents

Publication Publication Date Title
KR102433472B1 (ko) 진공 반송 모듈 및 기판 처리 장치
US10867819B2 (en) Vacuum processing apparatus, vacuum processing system and vacuum processing method
CN101542713B (zh) 基板处理装置和基板处理方法
KR102170007B1 (ko) 기판 처리 장치, 반도체 장치의 제조 방법, 및 프로그램
TWI621734B (zh) 用於基板載入之方法與裝備
JP6190645B2 (ja) 基板搬送方法
US20210202283A1 (en) Loadlock Module and Semiconductor Manufacturing Apparatus Including the Same
WO2012017653A1 (ja) 基板処理システム、搬送モジュール、基板処理方法及び半導体素子の製造方法
US10906756B2 (en) Substrate processing device
US8177550B2 (en) Vertical heat treatment apparatus and method for operating the same
KR101453189B1 (ko) 반송 장치
JP6212063B2 (ja) 基板搬送ロボット及びそれを用いた基板処理装置
JP4642619B2 (ja) 基板処理システム及び方法
KR20220094158A (ko) 반송 장치
JPH06314729A (ja) 真空処理装置
CN104115264A (zh) 基片处理系统
JP2000058619A (ja) 基板処理装置及び基板処理方法
US20060045668A1 (en) System for handling of wafers within a process tool
JP2009152649A (ja) ウェーハの搬送方法
US20040026036A1 (en) Substrate processing apparatus and substrate processing method
JP2023040996A (ja) Ｅｆｅｍを含むウェーハ処理装置及びウェーハ処理方法
US10403529B2 (en) Carrier transport device and carrier transport method
JP2000058619A5 (enExample)
JP4599431B2 (ja) 基板処理装置及び半導体装置の製造方法
WO2023140259A1 (ja) 搬送装置および搬送方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050317

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050317

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20060215

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20060215

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080319

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080325

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080526

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090212

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090609