JP2000056478A - サイドウォール除去液 - Google Patents

サイドウォール除去液

Info

Publication number
JP2000056478A
JP2000056478A JP22086498A JP22086498A JP2000056478A JP 2000056478 A JP2000056478 A JP 2000056478A JP 22086498 A JP22086498 A JP 22086498A JP 22086498 A JP22086498 A JP 22086498A JP 2000056478 A JP2000056478 A JP 2000056478A
Authority
JP
Japan
Prior art keywords
acid
side wall
sidewall
wiring material
oxidizing agent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22086498A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000056478A5 (enExample
Inventor
Fujimaro Ogata
不二麿 緒方
Tsutomu Sugiyama
勉 杉山
Kuniaki Miyahara
邦明 宮原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to JP22086498A priority Critical patent/JP2000056478A/ja
Publication of JP2000056478A publication Critical patent/JP2000056478A/ja
Publication of JP2000056478A5 publication Critical patent/JP2000056478A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
JP22086498A 1998-08-04 1998-08-04 サイドウォール除去液 Pending JP2000056478A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22086498A JP2000056478A (ja) 1998-08-04 1998-08-04 サイドウォール除去液

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22086498A JP2000056478A (ja) 1998-08-04 1998-08-04 サイドウォール除去液

Publications (2)

Publication Number Publication Date
JP2000056478A true JP2000056478A (ja) 2000-02-25
JP2000056478A5 JP2000056478A5 (enExample) 2005-10-27

Family

ID=16757750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22086498A Pending JP2000056478A (ja) 1998-08-04 1998-08-04 サイドウォール除去液

Country Status (1)

Country Link
JP (1) JP2000056478A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6173720B1 (en) * 1998-12-02 2001-01-16 International Business Machines Corporation Process for treating a semiconductor substrate
JP2005529487A (ja) * 2002-06-07 2005-09-29 マリンクロッド・ベイカー・インコーポレイテッド 酸化剤および有機溶媒を含有するマイクロエレクトロニクス洗浄組成物
JP2006066533A (ja) * 2004-08-25 2006-03-09 Kanto Chem Co Inc フォトレジスト残渣及びポリマー残渣除去組成物、並びにそれを用いた残渣除去方法
WO2008114616A1 (ja) 2007-03-16 2008-09-25 Mitsubishi Gas Chemical Company, Inc. 洗浄用組成物、半導体素子の製造方法
US7521406B2 (en) 2004-02-11 2009-04-21 Mallinckrodt Baker, Inc Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof
JP2011520142A (ja) * 2008-05-01 2011-07-14 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド 高密度注入レジストの除去のための低pH混合物

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6173720B1 (en) * 1998-12-02 2001-01-16 International Business Machines Corporation Process for treating a semiconductor substrate
JP2005529487A (ja) * 2002-06-07 2005-09-29 マリンクロッド・ベイカー・インコーポレイテッド 酸化剤および有機溶媒を含有するマイクロエレクトロニクス洗浄組成物
KR100958069B1 (ko) * 2002-06-07 2010-05-17 말린크로트 베이커, 인코포레이티드 산화제 및 유기 용매를 포함하는 마이크로일렉트로닉 세정조성물
US7521406B2 (en) 2004-02-11 2009-04-21 Mallinckrodt Baker, Inc Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof
KR101316993B1 (ko) * 2004-02-11 2013-10-11 아반토르 퍼포먼스 머티리얼스, 인크. 할로겐 산소산, 염 및 그 유도체를 포함하는 마이크로일렉트로닉 세정 조성물
JP2006066533A (ja) * 2004-08-25 2006-03-09 Kanto Chem Co Inc フォトレジスト残渣及びポリマー残渣除去組成物、並びにそれを用いた残渣除去方法
WO2008114616A1 (ja) 2007-03-16 2008-09-25 Mitsubishi Gas Chemical Company, Inc. 洗浄用組成物、半導体素子の製造方法
US7977292B2 (en) 2007-03-16 2011-07-12 Mitsubishi Gas Chemical Company, Inc. Cleaning composition and process for producing semiconductor device
JP2011520142A (ja) * 2008-05-01 2011-07-14 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド 高密度注入レジストの除去のための低pH混合物

Similar Documents

Publication Publication Date Title
JP4959095B2 (ja) 半導体デバイスの有機及びプラズマエッチング残さの洗浄用組成物
US20090291565A1 (en) Method for stripping photoresist
JP4224652B2 (ja) レジスト剥離液およびそれを用いたレジストの剥離方法
KR100222513B1 (ko) 내식막용 박리액 조성물 및 이를 사용한 내식막 박리 방법
JP3302120B2 (ja) レジスト用剥離液
KR100844051B1 (ko) 양이온성 염을 포함하는 잔류물 제거용 조성물 및 이를사용하는 방법
KR100714951B1 (ko) 수성 박리 및 세정 조성물
JP3150306B2 (ja) 還元及び酸化電位を有する求核アミン化合物を含む洗浄剤組成物およびこれを使用した基板の洗浄方法
JP3339575B2 (ja) 剥離剤組成物および剥離方法
US20080242575A1 (en) Treating liquid for photoresist removal, and method for treating substrate
JP2002523546A (ja) 非腐食性のストリッピングおよびクリーニング組成物
US20090111726A1 (en) Compounds for Photoresist Stripping
JP3514435B2 (ja) ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法
JP2007519942A (ja) レジスト、barc、およびギャップフィル材料を剥離する化学物質ならびに方法
WO2003091376A1 (en) Oxalic acid as a cleaning product for aluminium, copper and dielectric surfaces
KR20070003772A (ko) 석영 코팅된 폴리실리콘 및 기타 물질을 세정하기 위한비스-콜린 및 트리스-콜린의 사용법
US20010038976A1 (en) Rinsing solution for lithography and method for processing substrate with the use of the same
JP3255551B2 (ja) レジスト用剥離液組成物
JPH10289891A (ja) 半導体回路用洗浄剤及びそれを用いた半導体回路の製造方法
JP2003068699A (ja) サイドウォール除去液
JP3255623B2 (ja) レジスト用剥離液組成物
JP2000056478A (ja) サイドウォール除去液
KR100630338B1 (ko) 사이드월 제거용 조성물 및 사이드월 제거방법
JP3757045B2 (ja) サイドウォール除去液
JP2000056479A (ja) サイドウォールの除去方法

Legal Events

Date Code Title Description
A521 Written amendment

Effective date: 20050722

Free format text: JAPANESE INTERMEDIATE CODE: A523

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050722

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080805

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20081202