JP2000049414A - Optical function element device and optical transmitter- receiver, optical interconnection device and optical recorder using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an optical function element device provided with constitution capable of improving an yield and productivity in the case of mounting an optical function element, by using a different substrate other than the substrate of the element. SOLUTION: This optical function element device is provided with the optical function element. For a part of an electrode for injecting a current or applying a voltage to the optical function element, an electrode pad 6 pulled out to a part other than the function part of the optical function element and provided on a first substrate 21, and the electrode pad 12 on a wiring pattern formed on a second substrate 30 different from the first substrate 21 where the optical function element is formed, are joined so as to obtain electric conductivity.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical functional device such as a planar semiconductor light emitting / receiving device suitable for making a two-dimensional array or the like, which is easy to manufacture, has a high yield, and uses the same. The present invention relates to an optical transmission / reception device, an optical interconnection device, an optical recording device, and the like.

[0002]

2. Description of the Related Art Development of a two-dimensional array type surface-type solid-state light-emitting device is desired for application to large-capacity parallel optical information processing, high-speed optical connection, high-speed recording technology, a thin display device, and the like. For these applications, low cost, low power consumption, high productivity, high reliability, and the like are requirements for such light emitting devices. Various materials have been researched and developed as materials for light-emitting devices.Semiconductor single crystals are very suitable for ensuring reliability, and in particular, the development of surface-type light-emitting devices using compound semiconductors has been active. Is being done.

[0003] Among the light-emitting elements, a laser diode (LD) having reflection mirrors on both end surfaces has extremely high luminous efficiency as compared with natural light emission, and reduces power consumption even in a two-dimensional array. be able to. From this point of view, a vertical semiconductor laser (Vertical Cavity Surface)
Emitting Laser (VCSEL) has been actively developed in recent years.

At present, VCSELs are also being developed from a wavelength of about 400 nm blue to a communication wavelength band of 1.55 μm, and AlGaN / InGaN on a sapphire substrate is being developed.
System, InGaAlP / InAlP system on GaAs substrate,
InGaAs / AlGaAs, InG on InP substrate
Research has been conducted on material systems such as the aAs / InGaAsP system. FIG. 18 shows the basic structure of a VCSEL. This has a structure in which a laser beam is emitted vertically from a substrate, and 99% or more of highly reflective films 1002 and 1004 are provided on both surfaces of an epitaxial growth layer 1003 having a thickness of about several μm.
As the reflection film, a multi-layered film having a thickness of λ / 4 having a different refractive index is mainly used, and the material is dielectric glass or an epitaxially grown semiconductor (for example, AlAs / G).
aAs multilayer: ELECTRONICS LETTERS, 31, p.560 (1995)
And the like) are common. In FIG. 18, 10
01 is a laser substrate, 1005 is an insulating film, 1006 is an electrode, 1007 is a laser function part, 1008 is a laser substrate side electrode, 1009 is a buried layer, 1010 is an electrode 1006
Window area.

Several mounting methods of the VCSEL have been proposed. For example, Japanese Patent Application Laid-Open No. 8-186326 discloses a method of mounting a package and a heat sink transparent to a laser output so as to obtain a thermal connection and an electric connection, as shown in FIG. In this case, each VCS
Wiring is formed on the heat sink side corresponding to the EL, and electrical connection is performed by soldering or A
Electrical contact is obtained by ultrasonic bonding between u. In FIG. 19, 1110 is a resin mold body,
1111 is a laser electrode, 1112 is a laser substrate, 111
Reference numerals 3 and 1117 denote reflective films, 1114 and 1116 are cladding layers, 1118 is a current blocking layer, 1119 is a cap layer, 1120 is a package window, and 1211 is a package window side electrode.

In Japanese Patent Application Laid-Open No. Hei 6-237016, a substrate 1201 on which an electronic circuit is formed as shown in FIG.
Electrical wiring is provided on each VCSEL 12
03 is fixed so as to obtain an electrical contact. Further, a hole is formed in the VCSEL substrate 1202, and an optical fiber 121 is formed.
A method for implementing zero is also disclosed. At this time, VCS
A transistor 1204 is mounted under the EL 1203, and is mounted so that a cathode of the VCSEL and a collector of the transistor are connected to each other. In FIG. 20, reference numeral 1205 denotes an emitter electrode; 1206, a base electrode; 1207, an anode electrode; 1208, an insulating film;
Reference numeral 09 denotes a guide hole, and 1211 denotes an adhesive.

In the case where VCSELs are arrayed, wirings 1304 are provided on the support substrate 1305 side as described in Japanese Patent Application Laid-Open No.
2 (see FIG. 21).
In FIG. 21, reference numeral 1301 denotes a semiconductor substrate;
Is an optical fiber guide hole, 1306 is an optical fiber tape, 1307 is an optical fiber core, 1308 is an optical fiber clad, 1309 is an optical fiber core, 1310 is a coating material, 1311 is a light beam, and 1312 is an optical fiber core. Is the exposure length.

[0008]

In such a conventional mounting example, the upper surface (epitaxial layer surface) of each VCSEL is used.
And the wiring board having the electrode pads at positions corresponding to the VCSELs, while electrically connecting the pads to each other. However, in such a mounting method, a two-dimensional array VC
When the density of the SEL increases or when the size of the electrode pad is reduced in order to emphasize high-speed response, the alignment accuracy when bonding the pad of the VCSEL and the pad of the wiring board is required. This is because, of course, the pads must be aligned and joined together so as not to short-circuit with other wiring on the wiring board. As the density increases, a large number of wires pass between the pads, and the probability of short-circuiting increases. For this reason, alignment is difficult by this method in which the surface to be bonded cannot be directly monitored, leading to a decrease in yield and productivity.

[0009] In addition, when joining is performed with solder, the molten solder flows out of a window from which laser light is to be taken out to block the light, or the solder melts the Au electrode so that a VCSE is formed.
There is a problem that ohmic contact resistance with L increases. Also, when the Au electrodes are directly joined by ultrasonic waves or the like, and the joining point is close to the VCSEL, the VCSEL is used.
In some cases, causing deterioration of characteristics.

In the case of extracting light from a VCSEL, in the example of FIG. 19 (Japanese Patent Laid-Open No. 8-186326), when light emitted from the heat sink window 1120 is transmitted spatially or coupled to an optical fiber, a lens is used. Since it is indispensable, there has been a problem that the optical system becomes complicated and the cost increases.

On the other hand, in the example of FIG. 20 (Japanese Patent Laid-Open No. Hei 6-237016), a laser substrate 12 transparent to laser light is used.
02 must be used (in FIG. 20, the substrate 12
02 is completely removed to form a guide hole 1209, but actually, the substrate 1202 is
It is difficult to manufacture such that it does not remain between the L1203 and the guide hole 1209, which leads to a decrease in yield), and the usable wavelength band is limited. Further, as a method of coupling the laser light to the fiber 1210, a method of providing a guide hole 1209 in the laser substrate 1202 is disclosed. However, alignment of the hole position is difficult, and the laser light is coupled to the fiber 1210 without a lens. However, there are problems that the coupling loss cannot be reduced, and that the laser may be damaged when the fiber is inserted.

In view of such problems, an object of the present invention is to reduce the cost by increasing the yield and productivity when mounting an optical functional device using a substrate other than the substrate of the device. It is an object of the present invention to provide an optical function device having a configuration described above, and an optical transmitting / receiving device, an optical interconnection device, an optical recording device, and the like using the same.

[0013]

An optical functional device according to the present invention for achieving the above object has at least one optical functional device, and has an electrode for injecting a current or applying a voltage thereto. The portion is formed on an electrode pad provided on the first substrate by being drawn out to a portion other than the functional portion of the optical functional element, and formed on a second substrate different from the first substrate on which the optical functional element is formed. And an electrode pad on the wiring pattern formed so as to obtain electrical continuity, and a current can be injected or a voltage can be applied from the second substrate to a functional portion of the optical functional element. . By providing wiring on the first substrate to be drawn out to an electrode pad provided at a position distant from the functional part of the optical function element, and joining it so as to obtain electrical conduction with the electrode pad of another wiring board, The alignment accuracy at the time of bonding and the damage to the optical functional element can be reduced irrespective of the pitch (when a plurality of optical functional elements are provided) and the size of the optical functional element, so that the yield and productivity are improved.

Based on the above basic configuration, the following more specific forms are possible. The input / output of light to / from the optical functional element is configured to be performed from the first substrate side. In order to do so, for example, in the region of the first substrate where the functional part of the optical functional element is formed, the window region is formed by removing the substrate except for the functional layer. Thus, it is possible to provide a light input / output method and a method of coupling the mounted optical functional element to another element when the optical functional element is mounted as in the above-described basic configuration, regardless of the wavelength band. Can input and output light from To achieve this, the first substrate may be formed of a material that is transparent to light handled by the optical functional element.

The input / output of light to / from the optical function element can be performed from the second substrate side. To do so, for example, the second substrate is formed of a material transparent to light handled by the optical functional element.

When light is input / output from the second substrate side, the second substrate is provided with means for guiding light input / output to / from the optical function element at a position corresponding to the optical function element. ing. Accordingly, the efficiency of optical coupling of light input / output to the optical functional element when mounted as in the above basic configuration is to be improved. As the guide means, a micro lens, a Fresnel lens, or the like may be formed on the second substrate at a position corresponding to the optical function element. By forming a micro lens, a Fresnel lens, or the like at a position corresponding to the optical functional element on the wiring substrate, it becomes possible to collimate and condense light and to increase the coupling efficiency of light input and output. Further, an optical fiber is fixed to the second substrate at a position corresponding to the optical functional element in close contact with the second substrate (for example,
A hole for fixing an optical fiber is formed in the second substrate), and light input / output to / from the optical functional element may be made possible via the optical fiber. Thus, it is possible to provide a device in which the optical function element and the optical fiber for inputting and outputting the light are integrated.

[0017] A third substrate having a hole for fixing the optical fiber may be bonded to the second substrate.

The optical function element is a surface light emitting element (typically made of a semiconductor crystal) which emits light vertically from the first substrate surface on which the element is formed, and reflection mirrors are provided on both sides of the active layer. Or a photodetector that converts light irradiated on the element into electricity.

The means for bonding while obtaining electrical continuity of the electrode pads is to form solder on the electrode pads by plating or the like and to heat (solder to the electrode pads on the optical function element side or the wiring board side). If the electrodes are plated, if they are aligned with the corresponding electrode pads and heated, electrical and mechanical coupling can be easily obtained.) Anisotropic conductive adhesive or conductive By applying an adhesive and heating (while applying pressure), or by applying an anisotropic conductive adhesive or conductive adhesive to the electrode pads on the optical function element side or the wiring board side, Alignment with corresponding electrode pads (pressing and heating can easily provide electrical and mechanical coupling) and crimp surface electrodes together If the electrode pads corresponding to each other on the optical function element side and the wiring board side are aligned and pressurized, electrical and mechanical coupling can be obtained by pressure bonding, by applying ultrasonic waves or forming irregularities on the electrode pads. Doing so will make it easier to crimp.)

The electrode pads are joined while obtaining electrical continuity, and a metal bump electrically insulated from the surroundings is arranged between the functional part of the optical function element and the second substrate. It has a structure that can effectively radiate heat generated in the functional unit to the second substrate. If an electrically independent metal bump is formed between the optical function element and the wiring board, and the bump and the optical function element are pressed at the same time when the electrodes are joined, a heat radiation effect of the function element can be obtained.

The electrode pads are joined while obtaining electrical continuity, and the space between the functional part of the optical function element and the second substrate is filled with resin. Thereby, the adhesion strength of the optical functional element when mounted as described above can be increased, and the mechanical strength of mounting can be increased.

The electrode pads on the wiring pattern formed on the second substrate are provided outside the region where the optical function element is formed. Thereby, the purpose of the basic configuration can be effectively achieved.

The electrode wiring formed on the second substrate is mounted on a printed circuit board on which a package, another electronic functional element or an electric circuit is formed, directly or via a third wiring substrate. Accordingly, it is possible to provide a method of inputting / outputting light when mounted as described above and a method of coupling the mounted optical functional element with another element. For example, by bonding a wiring board to another wiring board and mounting it on an IC package or a printed board, the driving circuits can be easily integrated into a small size. In addition, by using a material that is transparent to light for the wiring board, light can be input and output from the wiring board side, and by mounting on an IC package or a printed circuit board, the driving circuit can be collectively and easily reduced in size. Can be integrated into

The first substrate is entirely bonded to the inner surface of the package which also functions as a heat sink. This can also provide an effective heat radiation means for the optical function element.

The second substrate is a semiconductor single crystal, and electronic functional elements are integrated on the second substrate, and circuits for driving and controlling the optical functional elements are provided on the same substrate. By using a semiconductor single crystal substrate as a wiring substrate, a driving element for an optical function element can be manufactured over the substrate, and a small-sized optical transceiver can be provided.

In order to avoid the influence of a short circuit on the end face of the first substrate, which may occur when bonding is performed while obtaining electrical continuity of the electrode pads, the first peripheral portion of the optical function portion region of the optical function element is provided at the outer periphery. A groove is formed by etching from the substrate to the optical functional layer. This makes it possible to eliminate the influence of the end face of the substrate on which the optical functional element is formed when mounting as described above, and to avoid the influence of the short circuit of the substrate at the time of bonding.

A plurality of optical functional elements are integrated on the first substrate, and each optical functional element is arranged on the first substrate such that the electrode pads are arranged around the functional part of the integrated optical functional elements. A wiring pattern for current injection or voltage application to the functional element is formed. The configuration of the present invention is particularly effective when integrated, and the pitch of each optical functional element,
Regardless of the size, alignment accuracy at the time of joining and damage to the optical functional element can be reduced. In this case, the optical functional element includes a surface-type light emitting element that emits light vertically from the first substrate surface on which the element is formed, and a functional part of a photodetector that converts light emitted to the element into electricity. It may have a structure integrated in the same region. Also,
In order to avoid mutual interference of light, electricity and heat between the functional parts of the optical functional element, the first substrate and the functional layer between the functional parts may be etched to form grooves.

The wiring pattern for injecting a current or applying a voltage to the optical function element is formed as an independent drive type.
Although wiring can be performed so as to be driven in a matrix, an independent drive type wiring pattern can be easily realized.

Further, a method of manufacturing a hole for fixing an optical fiber of an optical functional device according to the present invention, which achieves the above object, comprises a step of injecting a current into the optical functional element, which is a planar light emitting element, to emit light. A step of aligning a photomask using the emitted light as a mark, and a step of patterning using the photomask to form a hole in the second or third substrate by etching. I do. Thereby, when manufacturing an optical functional device in which an optical fiber is integrated, an optical fiber guide hole can be manufactured with high accuracy and high yield in a self-aligned manner.

The optical recording apparatus of the present invention that achieves the above object is characterized in that an optical functional element device is used as a light source, and light from the light source carrying a signal is applied to a recording medium. Thus, an optical recording device such as a printer or a CD-ROM can be optically recorded by using the above-mentioned optical functional element device, and an inexpensive optical recording device can be provided.

According to another aspect of the present invention, there is provided an optical transmitting / receiving apparatus including the above-mentioned optical functional device as a transmitter. Accordingly, optical information transmission can be performed using the optical functional element device, and an inexpensive optical information transmission device can be provided. In addition, the optical interconnection device of the present invention uses the above-described optical transmission / reception device for parallel transmission between boards,
Processing is performed.

The principle and features of the present invention will be described below using specific examples. For example, an 8 × 8 two-dimensional array VCSE
Consider the implementation of L. Since it is difficult to obtain an electrical junction at the position of each VCSEL as described in the section above, as shown in FIG. 2, electrode pads are provided on the upper surface (epitaxial layer surface) of the VCSEL and outside the VCSEL array region. The wiring pattern is formed as a lead line so as to be arranged. At this time, the wiring has ohmic contact only with each corresponding VCSEL portion, and the other region is isolated by an insulating film (SiO ₂ , SiN _x, etc.). The configuration of each VCSEL is such that, for example, as shown in FIG.
The AlAs / AlAs /
The structure is sandwiched between GaAs epimirrors. The method of extracting light differs depending on the wavelength. When the light can be extracted from the substrate side, a window of the electrode is opened on the substrate side. When the light is extracted from the epitaxial layer side as shown in FIG. 18, a window is provided on the electrode on the upper surface of the epitaxial layer.

It is known to form a lead electrode on a VCSEL substrate in this manner. However, when an electrical connection with a package or another device is made by wire bonding from an electrode pad on the VCSEL substrate, damage during bonding is caused. For example, there is a problem that the yield decreases.

On the other hand, the wiring board side is a simple example shown in FIG.
A VCSEL submount is formed. the material is,
Semiconductors such as Si or GaAs, ceramic such as AlN or Al ₂ O _3, such as a single crystal such as sapphire or diamond, although using a good thermal conductivity, may be a printed circuit board in some applications. Of course, when a Si substrate or the like is used, an electronic circuit, a photodetector, and the like may be integrated on the same front surface or the back surface. Pads are formed so as to correspond to the pads arranged outside the VCSEL array, and patterns are formed so that electrodes can be further drawn out from the pads.

As described above, in the case where the electrode pads drawn out of the VCSEL array region are joined to each other, the shape, size, and interval of the electrodes can be freely designed and the alignment accuracy can be reduced. It leads to improvement of productivity. Further, since the junction is away from the VCSEL, there is no damage to the VCSEL during the junction.

In general, the bonding between the pads is performed by forming solder on the pads by plating or the like, and then heating the pads while applying pressure. FIG. 1 shows an image of the cross-sectional shape.
For this bonding, there is a method of applying ultrasonic waves by joining Au pads together, or a method of forming unevenness on the surface and directly bonding by pressing. Alternatively, an adhesive containing conductive particles, so-called anisotropic conductive adhesive, may be applied and bonded by applying pressure and heat. In this case, the wiring pattern is 10 μm
With such a thick film, it acts as a bump, so that contact with an adjacent pattern can be prevented.

There are various ways of extracting light.
In a VCSEL oscillating in the 0.98 μm band on the s substrate,
What is necessary is just to take out directly from the board | substrate side in which VCSEL was formed like FIG. In this case, it is not necessary to open a window on the electrode on the epitaxial layer surface. At this time, as shown in FIG. 4, in order to enhance heat dissipation, electrically independent Au bumps or the like are provided under each VCSEL independently of wiring.
The electrode pads may be simultaneously joined to the corresponding VCSELs at the time of joining.

As in the 0.85 μm band and the 0.77 μm band, V
When the CSEL substrate is used as the absorber, as shown in FIG.
The substrate may be removed only in the SEL array region and etched so that an epimirror surface appears. On the other hand, when a transparent substrate such as sapphire or diamond is used as the wiring substrate, light can be extracted from the wiring substrate side as shown in FIG.

Further, as shown in FIG. 11, when the light is extracted as collimated light through a micro lens formed at a position corresponding to each VCSEL on the submount (glass substrate), any wavelength band can be handled. At this time, alignment of the positions of the laser substrate and the submount can be easily performed by monitoring the output light through the microlens while emitting the laser. Further, when an optical fiber is mounted, it can be easily mounted by attaching a third substrate as shown in FIG. 13, forming a guide hole there, and inserting the optical fiber into the guide hole. When a substrate transparent to laser light is used for forming the guide holes, a resist is applied as shown in FIG. 14 and the laser is radiated to use the resist as an alignment mark when the resist is exposed, as shown in FIG. Guide holes can be aligned by self-alignment. For this reason, productivity is improved and cost can be reduced. Even when the fiber is actually inserted, the yield is improved because the laser is not damaged. Of course, as shown in FIG. 15, one substrate may have both functions of the microlens and the fiber guide hole. Further, the above-described self-alignment process can be applied to the production of a microlens.

On the other hand, when a Si substrate is used as a wiring substrate instead of glass with a microlens array, FIG.
If hole etching is performed only in the VCSEL array region as in 6, it is possible to cope with a wavelength at which the Si substrate becomes an absorber. A fiber tape or a flat microlens array or a ball lens may be fitted into the hole area. In addition to the flat microlens, a method using a Fresnel lens array as a submount as shown in FIG. 17 may be used.

[0041]

Embodiments of the present invention will be described below with reference to the drawings.

(First Embodiment) The first embodiment of the present invention is an application of the concept of the present invention to an 8 × 8 two-dimensional VCSEL array in the 0.98 μm band. In FIG. 1, a VCSEL wafer 21 is made of InGaAs / GaAs.
The one-wavelength resonator 3 composed of the strained double quantum well active layer and the AlGaAs spacer layer is divided by 1 / AlAs / AlGaAs.
DBR composed of multilayer films (about 20 to 30 sets) having a thickness of 4 wavelengths
(Distributed reflection) MOVPE sandwiched between mirrors 2 and 4
The structure is obtained by epitaxial growth on the GaAs substrate 1 by a (organic metal vapor phase epitaxy) method or the like. The uppermost layer of the DBR mirror 4 is a high-doped GaAs layer so that an electrode contact can be easily made.

To perform current confinement in the light emitting region 8, the substrate is etched in an annular shape to the vicinity of the active layer 3, and then the polyimide 9 is etched.
Then, the concave portion is buried and flattened, an insulating film 6 such as SiN _x is formed there, and a window is opened, and then the electrode 6 is formed.
At this time, the DBR mirror 4 that appears after being etched in an annular shape
Alternatively, only the AlAs layer on the side surface may be selectively oxidized to further narrow the current.

As shown in FIG. 2, a wiring pattern is formed on the electrode 6 so that the electrode pad 6 is drawn out of the VCSEL array region 20. In the present embodiment, Cr /
Although Au was used as the electrode, a thick film by Au plating may be used to reduce resistance depending on the length of the wiring. Further, in order to increase the adhesion at the time of solder bonding and to reduce the contact resistance with the semiconductor, Ti / Pt / Au is used.
(T.sub.T).
i has good adhesion to the semiconductor, and Pt does not dissolve in solder, so it acts as a barrier, and Au dissolves in solder to form an alloy).
In this embodiment, the size is the light emitting region 8 of the VCSEL.
Is 10 μmφ and the interval is 125 μm.
Although the CSEL array area 20 is 875 μm □ and the entire chip 21 is 3 mm □, the size can be freely designed. The electrode 7 on the GaAs substrate 1 side of the VCSEL is Au
It is formed of Ge / Au and has a structure in which light can be extracted from the substrate 1 side by removing only the array region 20 (GaAs).
The s substrate 1 is transparent to light in the 0.98 μm band).

On the other hand, a pattern as shown in FIG. 3 was formed on the submount 30 on which the VCSEL substrate 21 was mounted. That is, an electrode pad is formed so as to match the electrode pad 6 corresponding to each light emitting region 8 of the VCSEL, and the pattern is such that the electrode 12 is drawn out of the electrode pad. As shown in FIG. 1, in the submount 30, a wiring 12 is formed on a SiO ₂ film 11 formed on a Si substrate 10 by thermal oxidation, by plating of Cu / Ni / Au or the like. Further, solder 13 is also formed on the electrode pad portion by plating or the like. Thus, the electrical connection and the mechanical connection can be easily obtained by aligning and heating the VCSEL substrate 21 and the wiring substrate 30.

In addition to the method of using solder, there is a method of bonding Au electrodes by pressing or applying ultrasonic waves. Further, an anisotropic conductive adhesive containing conductive particles (having a size of about 4 to 10 μm) may be applied, followed by pressing and heating. In this case, if the Au wiring is formed by plating to have a thickness of 10 μm or more, the anisotropy of the adhesive (has conductivity in the vertical direction but insulates in the horizontal direction) due to the size of the conductive particles. ) Can be drawn out, and the corresponding electrodes can be joined while insulating the adjacent wirings with good yield.

The space 15 formed by joining the electrodes may be left as it is, or may be filled with a resin or the like. In the present embodiment, the wiring pattern is of a device independent drive type, but wiring may be performed in a matrix drive. In this case, for example, the electrodes 6 on the epitaxial layer side of the VECSEL are connected and wired for the row in one direction of the two-dimensional array and drawn out to the electrode pad array outside the VECSEL region 20. Separation is performed in the same manner as the epitaxial layer side (for example, as viewed from above, the substrate 1 is etched from the substrate 1 to the lower portion of the active layer 3 and an insulating material is buried therein and planarized). It is necessary to connect and wire the electrodes 7 on the substrate side of the two-dimensional array in the other direction, and to lead them to the electrode pad array outside the VECSEL region (see FIG. 10 described later).

When the above structure is housed in a shallow box-shaped package, the wiring board 30 is die-bonded on the inner bottom surface of the package, and each electrode or electrode pad is connected to a pin provided on the side wall of the package by wire bonding 14. I just need. This package is used by being mounted on a printed circuit board or the like.

In this embodiment, since the alignment at the time of bonding the VCSEL substrate 21 and the wiring substrate 30 is not required to be accurate, the yield and the productivity are improved. Also,
Since there is no work such as joining near the VCSEL, VCS
There is no damage such as characteristic deterioration to EL.

(Second Embodiment) In a second embodiment of the present invention, a heat dissipation structure is provided below each light emitting region 8 as shown in FIG. 4 in order to improve the heat dissipation of the VCSEL. Other structures, that is, VCSEL structure, wiring structure, etc.
This is the same as the embodiment.

In a place corresponding to each VCSEL on the wiring board 30, the size is about 100 μmφ and the height is
The dots 40 are formed by plating or the like with a metal such as Au so that the thickness of the wiring 12 and the solder 13 is about the combined thickness. The Au dots 40 are electrically independent of each other and have nothing to do with wiring. By applying pressure when bonding the VCSEL substrate 21, the Au dots 40 and the electrodes 6 of the VCESL are pressed, and thermal conduction can be obtained. This leads to an improvement in the oscillation characteristics of the VCSEL. That is, reduction of the threshold current,
It is possible to increase the maximum power and reduce the thermal crosstalk between adjacent VCSELs.

In this Au pressure bonding, if irregularities of about 10 μm pitch are formed on the surface of the Au dots 40, the pressure bonding can be easily performed and the strength can be increased. In addition, as in the case of joining electrode pads, ultrasonic waves or solder may be used. When the damage to the VCSEL becomes a problem, the annular Au dot 40 penetrating the center by the size of the light emitting region 8 may be formed.

In the first and second embodiments, the example of the AlGaAs / GaAs system on the GaAs substrate has been described. Of course, other materials, that is, the blue light emitting GaN system and the GaAs system are used.
The same can be realized with GaInNAs or the like, which is a long-wave material on the substrate.

(Third Embodiment) In a third embodiment of the present invention, light is extracted by removing the substrate 51 on the VCSEL side only by etching in the VCSEL array region as in the structure shown in FIG.

Even a GaAs VCSEL has a wavelength of 0.9.
In the case of μm or less, the GaAs substrate becomes an absorber, so that it is necessary to remove the substrate when extracting light from the VCSEL substrate side. In this embodiment, the DBR mirrors 2 and 4 are made of AlAs / AlG as in the first and second embodiments.
The active layer 53 is made of GaAs / GaAs.
It is slightly different in that it is an AlGaAs-based multiple quantum well.

As in the second embodiment, the structure is such that the heat dissipation is improved by the Au dots 40. However, the Au dots 40 also function as a reinforcing base after the substrate 51 is removed. The void is filled with the resin 15. VC of substrate 51
The removal of the SEL array region (the region from which the substrate 51 has been removed is indicated by 50) is performed with a mixed solution of aqueous hydrogen peroxide and ammonia. Since GaAs and AlAs can be selectively etched with this mixture, the etching can be easily stopped on the DBR mirror 2 surface.

Although the removal of the substrate in this embodiment has been described with reference to a GaAs substrate, the present structure can be applied to a case where a dielectric mirror needs to be formed as in the case of an InP substrate. That is, HCl
For example, the InP substrate can be removed by selective etching with InGaAsP (an InGaAsP etch stop layer is formed on the InP substrate), and a dielectric mirror can be formed on the removed portion by sputtering or the like.

According to the present embodiment, it is possible to provide a structure that does not depend on the VCSEL material and oscillation wavelength.

(Fourth Embodiment) A fourth embodiment according to the present invention relates to a mounting mode when a material transparent to the oscillation wavelength of the VCSEL is used as the wiring board 60 as shown in FIG. is there. In the material system shown in the first embodiment, S
Even when the i-substrate is used as a wiring substrate, it can transmit light but absorbs light. Therefore, a transparent body such as glass is preferable as the wiring substrate. In order to enhance the heat sink effect, diamond or sapphire is suitable. At this time, in the VCSEL structure, it is necessary to provide a window in the electrode 6 to extract light from the epitaxial surface as shown in FIG.

In the VCSEL array of this embodiment, as shown in FIG. 6, the VCSEL substrate 1 side is bonded to, for example, a box-shaped package 61 to enable compact packaging. The package 61 is formed of ceramic or the like, and the electrode 67 on the VCSEL substrate 1 side is
Through the wiring (indicated by a broken line 65) arranged inside the
What is necessary is just to mount so that it may be connected to the appropriate wiring 68 of the wiring board 60. The wiring from the VCSEL array is
The substrate is mounted so as to be directly electrically connected to another substrate 62, for example, an electronic device substrate made of Si or a printed circuit board on which an electric circuit is formed, through 0.

According to such a mounting method, the VCSEL array and the driver for the VCSEL can be compactly integrated and mounted. Further, the present invention can be applied as a mounting form for so-called board-to-board optical interconnection in which printed circuit boards on which high-performance electronic circuits including a processor and the like are mounted are connected by light.

(Fifth Embodiment) In the present embodiment, the wiring from the wiring board 30 to the other parts is not the wire bonding but another type as in the fourth embodiment, which is a type of the first to third embodiments. Is electrically connected to the substrate 71. V
When the CSEL array is housed in an IC package or the like, FIG.
The wiring to the electrode pads 72 corresponding to the electrode pads 12 of the wiring substrate 30 and the pins of the package is formed on the surface thermally oxidized Si substrate 71 (73 is a surface thermal oxidation layer) which is hollowed out only in the VCSEL substrate 21 portion. Is formed, and the electrical connection between the electrode pads 12 and 72 and the wiring up to the package pins of the wiring board 30 and the package pins is obtained by soldering or the like as in the previous embodiments. At this time, the wiring board 30
Is bonded to the bottom surface of a box-shaped package, and the above-mentioned surface thermally oxidized Si substrate 71 is covered so as to cover it. As a result, the time and effort of wire bonding can be greatly reduced, leading to an improvement in productivity and a reduction in cost. In this example, an example in which the semiconductor device is housed in a package has been described. However, as another wiring substrate 71 mounted as in the fourth embodiment, a printed circuit board on which an electric circuit is formed may be used.

(Sixth Embodiment) In this embodiment, an electronic device is formed on the wiring substrate 80 itself as shown in FIG. On a wiring board 80 similar to that of the first embodiment, a wiring electrode 81 (corresponding to 12 in FIG. 1) has a collector electrode of a VCSEL driving transistor 82 or a resistor formed by thinning a wiring as it is. The other electrodes are also formed on the wiring board 80 so as to be connected to other electronic devices and a power supply. The manner of connecting the electrodes of the VCSEL driving transistor 82 depends on whether the VCSEL is an anode common or a cathode common.

If a VCSEL driving device or the like is formed on a wiring board in this manner, a compact light source device optimal for optical interconnection and the like can be provided.

(Seventh Embodiment) In this embodiment, as shown in FIG. 9, a short circuit at the end face of the VCSEL substrate 21 caused by solder or an adhesive (indicated by 90) when the electrode pads are bonded to each other is a characteristic of the VCSEL. In order to avoid this, the groove 91 is etched from the substrate 1 to the epitaxial surface after the bonding of the VCSEL substrate 21 and the wiring substrate 30 (the groove 91 has a polarity at this point. It is only necessary to exceed the changing non-doped active layer 3). The effect of the end face of the VCSEL substrate 21 is particularly likely to occur in a structure in which the active layer and its neighboring layers are connected over the entire substrate as shown in FIG. 18, because a leakage current occurs through this layer.

FIG. 10 is a plan view. Since the crosstalk of current, heat, and light between adjacent VCSELs cannot be ignored in some cases, similar grooves 92 and 91 are formed between the VCSELs in a lattice pattern. Etching may be performed. In this case, for the electrode on the substrate 1 side, the trench 93 is buried with polyimide or the like after etching to reduce the step, and then the wiring 93 is formed. The wiring 93 is formed by opening a window 94 for light emitted from the VCSEL. In the structure as shown in FIG. 10, the VCSEL can be driven as a matrix wiring, which is particularly effective when the number of arrays is large.
In this case, the electrode wiring 6 on the epitaxial layer side is not a completely independent driving type as shown in FIG. 2, but is formed by connecting VCSELs arranged in a column direction orthogonal to the row direction of the wiring 93.
Accordingly, the wirings 12 on the wiring board 30 are also provided only on both sides in the column direction as shown in FIG.

Of course, the wiring method up to the sixth embodiment may be used. In this case, since the electrode wiring 6 on the epitaxial layer side is of a completely independent drive type as shown in FIG. 2, the substrate-side electrode may be formed on the entire surface of the substrate 1 so that only the light-emitting portion opens a window. .

In the above-described embodiments, the 8 × 8 two-dimensional VCSEL array is used. However, the number of arrays is not limited, and one VCSEL may be used. Further, although the surface emitting laser array is used, the present invention can be applied to an edge emitting type laser array. In this case, since the edge-emitting laser emits light in parallel from the end face to the substrate surface, the edge-emitting laser is typically arranged one-dimensionally and the substrate-side electrode is applied to the entire back surface of the substrate to become a common electrode. The electrodes on the epitaxial layer side extend in a stripe shape in the light emission direction, and electrode pads are drawn out from these stripe electrodes. On the wiring board side, electrode pads corresponding to the electrode pads are formed, and these are further drawn out to the electrode pads at the edge of the wiring board.

Further, the surface-type light receiving element can be manufactured and mounted in the same manner, and an optical transmitting and receiving unit having a laser array and a photodetector array on the same substrate can be provided.

(Eighth Embodiment) In the following embodiment, an example in which light is input / output on the wiring board side will be described. FIG. 11 shows an eighth embodiment, in which the same reference numerals as those in FIG. 1 denote the same functional parts, and a description of those parts will be omitted.

In this embodiment, the electrode 10 of the VCSEL portion
Reference numeral 6 has a structure in which a window of 5 μmφ is provided at the center so that light can be extracted from the epitaxial layer side. On the other hand, VCSE
The submount or wiring board 130 for mounting the L board had a pattern as shown in FIG. That is, VC
Wiring 11 is formed so as to match electrode pad 106 corresponding to each light emitting region of SEL (this is wiring similar to FIG. 2).
2 (essentially the same as the wiring of FIG. 3). As shown in FIG. 11, the submount 130 is formed by arraying flat microlenses 111 having a refractive index distribution formed by diffusion on a glass substrate 110, and wirings 112 are formed on the back surface thereof by plating of Cu / Ni / Au. It is formed.

The gap 115 formed by joining the electrodes 106 and 112 may be left as it is, or may be filled with a resin that absorbs and scatters little with respect to the laser beam. Further, both surfaces of the glass substrate 110 may be provided with an anti-reflection coating in order to reduce the influence of reflection on the VCSEL.

In this embodiment, the alignment between the VCSEL substrate 21 and the wiring substrate 130 can be accurately performed by monitoring the output light through the microlens 111 while emitting the laser. At this time, a wiring substrate without a lens may be used, of course, or the microlens 111 may be manufactured by mounting and positioning a laser beam. Furthermore, a method may be used in which positioning is performed as described above, a groove is formed by etching, and a ball lens or the like is fitted into the groove and fixed with an adhesive or the like.

The wiring from the VCSEL array can be directly electrically connected to another substrate 117, for example, the wiring 116 of an electronic device substrate made of Si or a printed substrate on which an electric circuit is formed, via the wiring substrate 130. Implemented as follows.

According to such a mounting method, the VCSEL array, its collimating lens for laser light, and the driver for the VCSEL can be compactly integrated and mounted. Further, the present invention can also be applied as a mounting mode for so-called board-to-board optical interconnection in which printed circuit boards on which high-performance electronic circuits including a processor and the like are mounted are connected by light.

On the other hand, when the VCSEL array is housed in an IC package or the like, the size of the wiring board 130 is adjusted to the size of the cavity of the package, and the wiring 112 of the wiring board is adjusted.
Is formed so that it can be connected to the pins of the package, and electrical connection is obtained by soldering or the like, so that the time required for wire bonding from the wiring 112 can be omitted. When the laser substrate 21 is die-bonded to the bottom surface of the IC package, laser light can be extracted only from the wiring substrate 130 side (see also the description of FIG. 6).

Also in this embodiment, since the alignment at the time of bonding the VCSEL substrate 21 and the wiring substrate 130 is easy, the yield and the productivity are improved. Also, VCSEL
Since there is no work such as joining in the vicinity, there is no damage such as characteristic deterioration to the VCSEL. In this embodiment, the example of the InGaAs / GaAs system on the GaAs substrate is shown.
The same can be realized with GaInNAs, which is a long-wave material on a GaAs substrate.

(Ninth Embodiment) In a ninth embodiment according to the present invention, an optical fiber 143 for coupling a laser beam from a VCSEL is integrated as shown in FIG. Other structures, that is, VCSEL structure, wiring structure, etc.
Same as the embodiment, except that the heat sink 14
0 is provided on the laser substrate 21 side. The heat sink 140 is generally made of a ceramic such as Al ₂ O ₃ or AlN, and covers the laser substrate 21 in a box shape as shown in FIG.
The electrode 7 on the substrate side is configured so that it can be electrically connected to the corresponding electrode 112 of the wiring substrate 130 along the inner edge of the heat sink 140 (see the description of FIG. 6).

When the optical fiber 143 is mounted, the third substrate 141 is attached to the wiring substrate 130 to form a guide hole as shown in FIG. 13, and the optical fiber 143 is easily inserted by inserting the optical fiber 143 into the guide hole. it can. The process of forming the guide holes will be described with reference to FIG.

For example, as the fiber support substrate 141, 5
A Si wafer having a thickness of 00 μm is used. In FIG. 14A, the VCSEL array and the wiring substrate with microlenses 130 are mounted by the method as in the eighth embodiment, and
The substrate 141 is bonded to the wiring substrate 130 by an anodic bonding method or the like, and a resist 150 is applied. The anodic bonding is performed on the wiring board 1
This is a means for applying a voltage by applying a cathode to the glass 30 and applying an anode to the Si substrate 141. For this bonding, a polyimide-based or epoxy-based adhesive may be used.

Next, in FIG. 14B, patterning is performed using a photomask 154 to form a fiber guide groove that matches the position of each VCSEL. At this time, using the probe 151 and the probe 152,
The current flows through the SEL to emit light, and the micro lens 111
When the alignment is performed while monitoring the positional relationship between the light 153 that has reached the resist surface 150 through the aperture 155 and the opening 155 of the photomask (the size of the light 153 is smaller than the spot diameter of the light 153) with a CCD, accurate patterning can be easily performed.

Finally, in FIG. 14C, RIBE
(Reactive Ion Beam Etching) is performed to etch about 400 μm, and guide grooves 142 are formed by selective wet etching of Si (141) and glass (130) using KOH.

An optical fiber 143 (preferably having a non-reflection treatment applied to the end face) is inserted into the guide groove 142 thus formed, and is fixed with an epoxy-based adhesive or the like. Optical coupling is obtained, productivity is improved, and cost can be reduced. In this embodiment, the fiber 143
Since the laser is not damaged when the laser beam is inserted, the yield is improved.

In this embodiment, the micro lens 111 is provided. However, when the optical fiber 143 is a multi-mode fiber, 100 μm from the VCSEL emission surface.
The lens 111 can be omitted if the thickness of the glass substrate 130 as a wiring substrate is set to about 100 μm, since the connection can be sufficiently performed even if the distance is about m.

(Tenth Embodiment) A tenth embodiment according to the present invention will be described with reference to FIG.
161 and guide groove 1 for optical fiber
62. The manufacturing method and the like are the same as in the eighth and ninth embodiments. The difference is that the microlens 161 is formed on the surface of the wiring glass substrate 160 facing the VCSEL array.
Since the distance between the VCSEL and the VCSEL is short, the lens 161 has a short focal length. In addition, since the hydrofluoric acid is used as a wet etchant for etching the fiber guide groove 162, attention must be paid to the etching stop. However, since there is no bonding between the glass substrate 160 and another substrate, cost can be reduced.

(Eleventh Embodiment) In the eighth, ninth, and tenth embodiments, the micro lenses 1
11 and 161, glass was mainly used as the substrate material. On the other hand, as shown in FIG. 16, when the wiring board 170 is subjected to hole etching only in the VCSEL array area (about 1 mm square in the case of the VCSEL of the eighth embodiment) to form the laser light extraction port 171, the material is Is no longer limited. For example, the wiring board 17
If the substrate is subjected to hole etching with KOH using a Si substrate as 0, light can be extracted even when the laser wavelength is in the Si absorption region. Moreover, the micro lens array 17
If the outer shape 2 and the optical fiber tape 173 are formed so as to correspond to the hole portion 171 of the wiring board 170, they can be easily mounted by being fitted into the hole portion 171 and fixed with an adhesive or the like. A ball lens may be fitted.
The other points are the same as those of the ninth embodiment.

(Twelfth Embodiment) In this embodiment, a Fresnel lens 181 is used for a wiring board 180 as shown in FIG. 17 instead of a flat microlens formed by diffusion. Other configurations are the same as those of the eighth embodiment.

The method of manufacturing a Fresnel lens can also be performed by emitting light from a VCSEL and patterning it by a self-alignment method as in the case of forming a fiber guide groove. Compared with a flat microlens, the Fresnel lens 181 is efficiently reduced, but is easy to manufacture and can use a Si substrate, so that the cost can be reduced. For example, when the thickness of the wiring board 180 is 350 μm, that is, when the distance from the lens 181 to the VCSEL is about 360 μm, it is necessary to design according to the wavelength.
The light can be collected by a three-zone Fresnel lens formed by a ring-shaped groove having a depth of about 0.5 μm.

In the embodiments described in the eighth to twelfth embodiments, the 8 × 8 two-dimensional VCSEL array is used. However, the number of arrays is not limited, and one VCSEL may be used.
May be. Further, the present invention can be applied to an edge-emitting laser array (in this case, a mirror or the like for directing light from the laser in a direction perpendicular to the substrate needs to be provided near the laser edge).
Furthermore, a surface-type light receiving element can be manufactured and mounted by the same method, and an optical transmission / reception unit including a laser array and a photodetector array on the same substrate can be provided.

By the way, in the embodiments described so far, an example has been described in which the electrodes corresponding to the cathode and anode of the optical functional device such as a laser are formed on the front and back of the optical functional device substrate. By forming a step (this step is formed from the side to be etched until it reaches a layer deeper than the active layer, an insulating film is formed on the side wall that appears by etching, and then electrode wiring is applied to form a step deeper than the active layer. The electrode having the polarity of the layer is taken out).

When the VCSEL array described so far is used for spatial transmission, it is used as a light source for optical interconnection between boards and recording by optical writing, that is, a laser beam printer, a CD-ROM, a magneto-optical disk, or the like. be able to. Further, it can be connected to an optical fiber and used as a light source device for large capacity optical parallel transmission.

[0092]

As described above, according to the present invention, the yield and the productivity when the optical functional element is mounted on another substrate other than the substrate of the element can be improved.

[Brief description of the drawings]

FIG. 1 is a sectional view of a VCSEL array of a first embodiment according to the present invention.

FIG. 2 is a plan view of a VCSEL array substrate according to the present invention.

FIG. 3 is a plan view of a wiring board for joining a VCSEL array according to the present invention.

FIG. 4 is a sectional view of a VCSEL array according to a second embodiment of the present invention.

FIG. 5 is a sectional view of a VCSEL array according to a third embodiment of the present invention.

FIG. 6 is a sectional view of a VCSEL array module according to a fourth embodiment of the present invention.

FIG. 7 is a sectional view of a VCSEL array according to a fifth embodiment of the present invention.

FIG. 8 is a sectional view of an electronic device integrated VCSEL array according to a sixth embodiment of the present invention.

FIG. 9 is a sectional view of a VCSEL array according to a seventh embodiment of the present invention.

FIG. 10 is a VCSE of a seventh embodiment according to the present invention.
It is a top view of an L array.

FIG. 11 is a VCSE of an eighth embodiment according to the present invention.
It is sectional drawing of an L array.

FIG. 12 is a plan view of a wiring board for joining a VCSEL array according to the present invention.

FIG. 13 is a ninth embodiment of a VCSE according to the present invention.
It is sectional drawing of an L array module.

FIG. 14 is a ninth embodiment of a VCSE according to the present invention.
It is a figure showing the manufacturing method of L array module.

FIG. 15 is a diagram showing a VCS according to a tenth embodiment of the present invention;
It is sectional drawing of an EL array module.

FIG. 16 is a diagram illustrating a VCS according to an eleventh embodiment of the present invention;
It is sectional drawing of an EL array module.

FIG. 17 is a diagram illustrating a VCS according to a twelfth embodiment of the present invention;
It is sectional drawing of an EL array module.

FIG. 18 is a sectional structural view of a conventional VCSEL.

FIG. 19 is a diagram of a V with a wiring board and a heat sink board.
FIG. 11 is a diagram illustrating a conventional example of a CSEL.

FIG. 20 is a diagram showing a conventional example of a VCSEL with an electronic circuit board.

FIG. 21 is a diagram showing a conventional example of a mounting mode of a VCSEL array on a wiring board.

[Explanation of symbols]

1, 51, 1001, 1112 Laser substrate 2, 4, 1002, 1004 Semiconductor multilayer mirror 3, 53, 1003, 1115 Active layer 5, 11, 73, 1005, 1208 Insulating film 6, 106 Laser-side electrode / wiring 7 , 67, 1008 Laser board side electrode 8, 1007 Laser function part 9, 1009 Embedding area 10, 71, 110, 160, 170, 180 Wiring board 12, 68, 72, 81, 112 Wiring board side electrode / wiring 13 Bonding Metal for bonding 14 Bonding wires 15 and 115 Resin 20 VCSEL array area 21 Laser board 30 and 130 Wiring board 40 Metal for heat dissipation 50 Area where the board is removed 60 Transparent wiring board 61 and 140 Package 62, 117 and 201 Electronic circuit board 65 Package Inner wall wiring 80 electronic device substrate 82, 1204 Laser driving transistor 90 Solder bump 91, 92 Separation groove 93 Matrix electrode 94, 1010 Window area of electrode 111, 161 Flat microlens 116 Electronic circuit board electrode 141 Fiber fixing board 142, 162, 1209, 1303 Fiber Guide holes 143, 1210 Optical fiber 150 Photo resist 151, 152 Current probe 153, 1311 Light beam 154 Photo mask 155 Photo mask opening 171 Wiring board opening 172 Micro lens array 173, 1306 Optical fiber tape 181 Fresnel lens 1006, 1111 Laser electrode 1011 Laser resonator 1110 Resin molded body 1113, 1117 Reflection film 1114, 1116 Cladding layer 1118 Current block layer 1119 Top layer 1120 Package window 1121 Package window side electrode 1202 Light emitting chip 1203, 1302 Surface emitting laser 1205 Emitter electrode 1206 Base electrode 1207 Anode electrode 1211 Adhesive 1301 Semiconductor substrate 1304 Wiring pattern 1305 Support substrate 1307 Core 1308 Clad 1309 Optical fiber core 1310 Covering material 1312 Exposure length

Claims (33)

[Claims] An optical function element is provided, and a part of an electrode for injecting a current or applying a voltage to the optical function element is led out to a part other than a functional part of the optical function element, and is provided on a first substrate. The provided electrode pad is bonded to an electrode pad on a wiring pattern formed on a second substrate different from the first substrate on which the optical functional element is formed so that electrical continuity can be obtained. ,
An optical functional device, wherein current injection or voltage can be applied from the second substrate to a functional portion of the optical functional device. 2. An optical functional device according to claim 1, wherein input and output of light to and from said optical functional device can be performed from the first substrate side. 3. The optical functional element of claim 1, wherein the optical functional element of the first substrate has a functional portion of the optical functional element such that input and output of light can be performed from the first substrate side on which the optical functional element is formed. 3. The optical functional device according to claim 2, wherein the window region is formed by removing the substrate while leaving only the functional layer in the formed region. 4. The optical functional device according to claim 2, wherein the first substrate is formed of a material transparent to light handled by the optical functional device. 5. The optical function according to claim 1, wherein input / output of light to / from the optical function element can be performed from the second substrate side. Element device. 6. The optical functional device according to claim 5, wherein the second substrate is formed of a material transparent to light handled by the optical functional device. 7. The second substrate is provided with means for guiding light input / output to / from the optical functional element at a position corresponding to the optical functional element. The optical function element device according to the above. 8. The optical functional device according to claim 7, wherein a microlens is formed on the second substrate at a position corresponding to the optical functional device. 9. The optical functional device according to claim 7, wherein a Fresnel lens is formed on the second substrate at a position corresponding to the optical functional device. 10. An optical fiber is fixed to the second substrate at a position corresponding to the optical function element so as to be in close contact with the second substrate. 10. The optical functional device according to claim 7, 8 or 9, wherein the optical functional device is capable of being operated via an external device. 11. The optical function device according to claim 10, wherein a hole for fixing the optical fiber is formed in the second substrate. 12. The apparatus according to claim 7, wherein a third substrate having a hole for fixing the optical fiber is adhered on the second substrate. Optical function device. 13. The device according to claim 1, wherein the optical function device is a surface light emitting device that emits light vertically from a surface of the first substrate on which the device is formed. Optical function device. 14. An optical functional device according to claim 13, wherein said surface light emitting device is a surface semiconductor laser comprising a semiconductor crystal and having reflection mirrors on both sides of an active layer. 15. The optical functional element device according to claim 1, wherein the optical functional element is a photodetector that converts light applied to the element into electricity. 16. A method according to claim 1, wherein said means for bonding while obtaining electrical continuity of said electrode pads comprises forming solder on said electrode pads by plating or the like and heating. 3. The optical function device according to claim 1. 17. The method according to claim 17, wherein the means for bonding while obtaining electrical continuity of the electrode pad includes a step of applying an anisotropic conductive adhesive or a conductive adhesive on the electrode pad and heating. The optical functional device according to any one of claims 1 to 15, wherein: 18. The optical functional device according to claim 1, wherein the means for joining while obtaining electrical continuity of the electrode pads is to press-bond surface electrodes. 19. A metal bump which is joined while obtaining electrical continuity of the electrode pads and is electrically insulated from the surroundings between a functional portion of the optical function element and the second substrate. 19. The optical functional device according to claim 1, wherein the optical functional device has a structure capable of effectively dissipating heat generated in the functional portion to the second substrate. 20. A structure in which the electrode pads are joined while obtaining electrical continuity, and a resin is filled in a gap formed between a functional portion of the optical function element and the second substrate. 20. The optical function device according to claim 1, wherein 21. An electrode pad on the wiring pattern formed on the second substrate is provided outside a region where an optical functional element is formed.
0. The surface light-emitting device according to any one of 0 to 1 above. 22. An electrode wiring formed on the second substrate may be packaged directly or via a third wiring substrate.
22. A printed circuit board on which another electronic functional element or an electric circuit is formed.
The optical function device according to any one of the above. 23. The optical functional device according to claim 1, wherein the first substrate is entirely bonded to an inner surface of the package which also functions as a heat sink. 24. The second substrate is a semiconductor single crystal,
24. The optical function according to claim 1, wherein an electronic functional element is integrated on the second substrate, and a circuit for driving and controlling the optical functional element is provided on the same substrate. Element device. 25. An outer peripheral portion of a region of an optical function portion of the optical function element, in order to avoid an influence of a short circuit of an end face of the first substrate which may occur when bonding while obtaining electrical conduction of the electrode pad. 25. A groove is formed by etching from the first substrate to the optical functional layer.
The optical function device according to any one of the above. 26. A plurality of optical function elements are integrated on a first substrate, and the electrode pads are arranged on the first substrate around a functional part of the integrated optical function elements. 2. A wiring pattern for injecting a current or applying a voltage to each optical function element is formed.
26. The optical function element device according to any one of items 25 to 25. 27. A light emitting device comprising: a surface light emitting device for vertically emitting light from a first substrate surface on which the device is formed; and a photodetector for converting light applied to the device to electricity. 27. The optical functional device according to claim 26, wherein the functional units have a structure integrated in the same region. 28. A groove is formed by etching a first substrate and a functional layer between each functional part in order to avoid mutual interference of light, electricity and heat between the functional parts of the optical functional element. The optical functional device according to claim 26 or 27, wherein: 29. The optical functional device according to claim 26, wherein the wiring pattern for injecting a current or applying a voltage to the optical functional device is formed as an independent drive type. 30. A method for producing a hole for fixing an optical fiber of an optical functional device according to claim 11 or 12, wherein a step of injecting a current into said optical functional device, which is a surface light emitting device, to emit light. A step of aligning a photomask using the emitted light as a mark, and a step of patterning using the photomask to form a hole in the second or third substrate by etching. A method for manufacturing an optical functional device. 31. An optical recording apparatus using the optical functional element device according to claim 1 as a light source, and applying light from the light source on which a signal is mounted to a recording medium. 32. An optical transmitting / receiving apparatus comprising the optical functional element device according to claim 1 as a transmitter. 33. An optical interconnection apparatus for performing parallel transmission and processing between boards using the optical transmission / reception apparatus according to claim 32.