JP2000049197A - Bump tape carrier and producing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a bump tape carrier where there is no formation of a bridge between metal bumps, even if a pitch between the metal bumps is the narrowest. SOLUTION: This bump carrier for mounting semiconductor chips on a circuit board is constituted of insulating films 11, conductive patterns 12 which are formed on the insulating films 11, and metal bumps 13 which are formed on the conductive patterns 12 and are used to connect to semiconductor chips. Each metal bump 13 has a columnar shape which actually has a vertical side against each surface of the conductive patterns 12.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a tape carrier with bumps and a method for manufacturing the same.

[0002]

2. Description of the Related Art In order to respond to demands for miniaturization, weight reduction, high speed, and high functionality of electronic devices, semiconductor packages include:
Various forms have been developed. As such a semiconductor package technology, in particular, in order to achieve both the demand for a higher pin count due to the higher integration of the semiconductor chip and the miniaturization of the device, a semiconductor chip is formed on a metal pattern formed on an insulating film via a solder bump. There is known a package technology based on a so-called tape carrier method for joining the tapes.

One example of such a tape carrier type packaging technique is disclosed in Japanese Patent Application Laid-Open No. Hei 8-64636. In this packaging technique, as shown in FIG. 10, a metal layer 2 is formed on a polyimide tape 1 and a solder bump 3 is formed on the metal layer 2. The solder bump 3 is thermally bonded to a metal pad 6 formed on one main surface of the electronic device (semiconductor chip) 4 corresponding to the solder bump 3. Thereafter, the tape carriers on which the electronic devices 4 are mounted are cut out individually.

[0004] In this tape carrier system, since a thin and transparent polyimide tape is used, there is an advantage that stress applied to a solder joint is alleviated even in a heat cycle, and solder bumps can be observed from the back surface.

However, solder bumps are generally formed by cream solder printing or a method of transferring solder balls. In such a method, as shown in FIG. 10, the solder bumps 3 must be spherical. . In the case of a spherical solder bump, when the pitch between the solder bumps becomes smaller and the distance between the solder bumps becomes shorter, when a semiconductor chip is mounted,
There is a problem that a solder bridge is formed. In addition, there is a problem that it is difficult to fill the underfill resin.

[0006]

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and when a semiconductor chip is mounted, a bridge is formed between solder bumps even if the pitch of the solder bumps becomes small. It is an object of the present invention to provide a tape carrier with a bump, which does not cause a problem.

Another object of the present invention is to provide a method for manufacturing such a tape carrier with bumps.

[0008]

According to the present invention, there is provided a tape carrier having bumps for mounting a semiconductor chip on a circuit board, comprising: an insulating film; and a tape carrier formed on the insulating film. A conductor pattern,
And a metal bump for semiconductor chip connection formed on the conductor pattern, wherein the metal bump comprises a columnar body having a side surface substantially perpendicular to the conductor pattern surface. I will provide a.

In such a tape carrier with bumps, the conductor pattern has a terminal for connection to a circuit board, and the insulating film below the terminal has a smaller diameter than the terminal of the conductor pattern. Holes can be formed. A metal layer is formed by plating on the metal foil exposed in the hole to form a bonding electrode. The connection between the tape carrier and the circuit board can be made via the joining electrodes. As the metal layer, C
u, Ni, Sn, Sn alloy (solder) or the like can be used.

[0010] Materials for forming the metal bump include:
Although Sn and Sn alloy (solder) etc. are mentioned, solder is particularly preferable.

Each of the metal bumps and the bonding metal layer may have a multilayer structure. In this case, the metal bumps and the bonding metal layer are formed of a top layer made of solder and a metal having a melting point higher than that of solder, such as C
and a lower layer made of u and Ni.

[0012] In the tape carrier with bumps of the present invention configured as described above, the metal bumps are formed by pillars having side surfaces substantially perpendicular to the conductor pattern surface. Unlike a bump, a solder bridge is not formed when a semiconductor chip is mounted, and an underfill resin can be easily filled.

Further, the present invention provides a step of forming a first photosensitive resin layer on a metal foil of a laminate comprising an insulating film and a metal foil, and patterning the first photosensitive resin layer to form a circuit. Forming a first resin pattern for forming;
Performing a first electroplating to form a metal pattern on the metal foil exposed from the first resin pattern;
Removing the first resin pattern and forming a second photosensitive resin layer on the entire surface including the metal pattern; patterning the second photosensitive resin layer to form a second photosensitive resin layer for forming a metal bump; Forming a resin pattern; performing a second electroplating to form a metal bump on the metal pattern exposed from the second resin pattern;
A method of manufacturing a tape carrier with bumps, comprising the steps of: removing a resin pattern, and selectively removing the metal foil using the metal pattern as a mask to form a metal foil pattern. provide.

In the first method for manufacturing a tape carrier with bumps, before the step of forming the first photosensitive resin layer, a hole having a diameter smaller than a terminal of the conductor pattern is formed in the insulating film. Can be formed. In this case, the first electroplating forms a first metal layer on the metal foil exposed in the hole,
A second metal layer is formed on the first metal layer in the hole by electroplating. The metal layer having a laminated structure including the first metal layer and the second metal layer forms a bonding electrode.

In this case, Ni, Sn, solder (Sn alloy, etc.) is used as the metal pattern and the first metal layer, and Sn, solder (Sn alloy, etc.) is used as the metal bump and the second metal layer. I can do it. It is desirable that the melting points of the metal forming the metal pattern and the first metal layer be higher than the melting points of the metal bumps and the second metal layer.

Further, the hole can be formed after the step of forming the metal pattern and before the step of forming the metal bump. In this case, a metal layer for a bonding electrode is formed on the metal foil exposed in the hole by the second electroplating. In this case, the metal layer is made of a material constituting the metal bump, that is, Sn, solder (S
n alloy or the like).

The holes can be formed in the insulating film by using, for example, a laser.

The hole formed in the insulating film has an inner wall having a taper angle of 15 ° or more, preferably 45 ° or more so as to expand toward the side opposite to the metal foil side (terminal of the conductor pattern). It is desirable. The hole having an inner wall having such a taper angle is formed by irradiating the insulating film with a low-energy carbon dioxide laser with a large number of pulses, or by irradiating the insulating film with a defocused carbon dioxide laser. It is possible.

The energy density of the hole formed by the carbon dioxide gas laser can be appropriately set because it differs depending on the material, thickness, and hole size of the insulating film.

Further, the present invention provides a step of forming a first photosensitive resin layer on a metal foil of a laminate comprising an insulating film and a metal foil, and patterning the first photosensitive resin layer to form a metal film. Forming a first resin pattern for forming a bump, performing electroplating, forming a metal bump on the metal foil exposed from the first resin pattern, removing the first resin pattern, Forming a second photosensitive resin layer on the entire surface including the metal bumps by an electrodeposition method, and patterning the second photosensitive resin layer to form a second resin pattern for circuit formation , The second
A second method for manufacturing a tape carrier with bumps, comprising the step of forming a metal foil pattern by selectively removing the metal foil by using the resin pattern as a mask.

In the second method for manufacturing a tape carrier with bumps, before the step of forming the first photosensitive resin layer, a hole having a diameter smaller than a terminal of the conductor pattern is formed in the insulating film. Can be formed. In this case, a metal layer constituting a bonding electrode is formed on the metal foil exposed in the hole at the same time as the formation of the metal bump by the electroplating. In this case, the metal layer is made of a material constituting the metal bump, that is, Sn, solder (S
n alloy or the like).

Further, by performing the electroplating twice or more, a metal bump and a metal layer having a multilayer structure can be formed. In this case, the uppermost layer is made of solder, Sn, or the like suitable for fusion bonding, and the lower layer is made of a metal (Cu, Ni, Sn, solder, or the like) having a higher melting point than the metal of the uppermost layer.

According to the above-described method for manufacturing a tape carrier with two bumps, since a solder resist is not used unlike the conventional method, it is not necessary to form the metal bumps high, so that the metal bumps can be easily formed. In addition, the formation time is short, and as a result, the manufacturing cost can be reduced. Although it is very difficult to form a bump on an already completed substrate, according to the method of the present invention, the bump is formed during the manufacturing process of the substrate, so that the bump can be easily formed. .

[0024]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a tape carrier with bumps according to an embodiment of the present invention will be described with reference to the drawings.

FIG. 1 is a sectional view showing a tape carrier with metal bumps according to one embodiment of the present invention. In FIG. 1, a copper pattern 12 is formed on an insulating film 11, and solder, Au, Sn, S
A metal bump 13 made of an n alloy or the like is formed. In the insulating film 11, a hole having a diameter smaller than that of the copper pattern 12 (terminal 51 in FIG. 11) is formed at a portion connected to the circuit board. ing. This bonding electrode 14
It is formed by plating of copper, nickel, solder, or the like, and is connected to the conductor of the circuit board via a solder ball or cream solder supplied on the joining electrode.

FIG. 11 is a perspective view of the tape carrier.
The upper part of FIG. 11 shows a view from the front side, and the lower part shows a view from the back side. In FIG. 11, the copper pattern 12
Has terminals 51 at locations electrically connected to the conductors of the circuit board in the vertical direction, and holes smaller in diameter than the terminals 51 are formed in the insulating film 11 below these terminals 51. . Solder, Cu, Ni, Au, Sn alloy or the like formed in this hole is used for bonding electrode 14.
To form A solder ball (not shown) is formed on the bonding electrode 14, and is connected to a conductor of a circuit board via the solder ball.

In the tape carrier with metal bumps configured as described above, the metal bumps 13 have a cylindrical shape with straight side surfaces. The cross section is not limited to a cylinder, but may be a prism having a polygonal cross section. As described above, since the metal bump 13 has a columnar shape with a straight side surface, the pitch between the metal bumps is small unlike the spherical metal bump of the conventional tape carrier shown in FIG. Even if the distance between them becomes shorter, no bridge is formed, and the filling of the underfill resin does not become difficult.

Further, since the metal bump is formed directly on the copper pattern without providing a solder resist for preventing the bridge of the metal bump, it is not necessary to form the metal bump high, so that the formation of the metal bump is easy. In addition, there is an advantage that the time for formation is short.

Further, the thickness of the Cu foil constituting the copper pattern is as thin as 10 to 18 μm. In the structure in which solder is connected to such a thin copper pattern, stress is applied to the copper pattern,
Although the copper pattern is broken, a hole smaller in diameter than the copper pattern 12 (terminal 51 in FIG. 11) is formed in a portion of the insulating film 11 connected to the circuit board.
In a structure in which a metal layer is formed by plating of u, Ni, or the like,
This metal layer serves as reinforcement, preventing the copper pattern from breaking.

In general, a solder ball as an external mounting terminal is connected to the BGA terminal.
The solder balls are formed by applying a flux to the terminal portion, placing the solder balls thereon, and then heating and melting the solder balls.

However, since the terminal is located at the bottom of the hole formed in the insulating film, when the solder ball is formed in the terminal portion as described above, an open defect in which the solder ball and the terminal are in poor contact occurs. Or the air in the holes remains as voids in the molten solder.

On the other hand, in the structure in which the bonding electrode 14 is formed in the hole of the insulating film 11, the solder ball surely contacts and is connected to the bonding electrode 14, so that no open failure occurs. . Since the bonding electrode 14 is already filled in the hole of the insulating film 11, there is no problem that air in the hole remains as a void in the molten solder.

Next, the hole formed in the insulating film 11 has an inner wall having a taper angle of 15 ° or more, preferably 45 ° or more so as to spread toward the side opposite to the copper pattern 12. Can be done. As described above, by forming a hole having a tapered inner wall in the insulating film 11, embedding the bonding electrode 14 in the hole, and further forming the solder ball 61 on the bonding electrode 14, The effect is obtained.

FIG. 12A shows a case where a hole having an inner wall perpendicular to the insulating film 11 is formed, and FIG.
The case where a hole having a tapered inner wall is formed in the insulating film 11 is shown. As shown in FIG. 12B, when a hole having a tapered inner wall is formed in the insulating film 11, the opening diameter of the hole at the joint between the solder ball 61 and the tape carrier is as shown in FIG. As shown, the diameter on the side of the terminal 51 can be reduced even if it is the same as the case where a hole having a vertical inner wall is formed in the insulating film 11.

Therefore, when the pitch of the terminals 51 is the same, the number of wirings between the terminals 51 can be increased, and therefore, the terminals 51 cannot be arranged because the wiring space on the tape carrier is insufficient, so that there is no waste. Can be used effectively.

That is, when a hole of 0.25 mmφ having a vertical inner wall is formed in the insulating film 11 having a thickness of 40 μm, as shown in FIG. Excluding the 0.35mm terminal dimensions, the wiring space is only 0.15mm,
When L / S = 30/30 μm, only two wires 71 can be formed.

On the other hand, when a hole having an inner wall with a taper angle of 45 ° is formed in the insulating film 11, the dimensions of the terminal portion can be made 0.29 mm, so that the wiring space becomes 0.21 mm, and therefore three wires are required. The wiring 81 can be formed.

As shown in FIG. 12A, when a hole having a vertical inner wall is formed in the insulating film 11, the solder ball 61 is connected to the bonding electrode filled in the hole of the insulating film 11. Neck is generated at a joint portion with the joint 14, and stress strain is concentrated on the constricted portion. As a result, cracks may occur.

On the other hand, as shown in FIG.
When a hole having a tapered inner wall is formed in the insulating film 11, no constriction occurs at the joint between the solder ball 61 and the joining electrode 14, so that the concentration of stress strain at that portion is reduced, A highly reliable solder joint having good joining strength can be obtained.

A semiconductor chip (not shown) is joined to the tape carrier described above, and a semiconductor package is obtained. This is mounted on a circuit board (not shown) via the bonding electrode 14. In the resulting mounting structure, the stress due to the thermal expansion of the circuit board was relieved by the deformation of the tape carrier, and as a result, the connection between the circuit board and the semiconductor chip could be realized with high reliability and low cost. .

Next, a method of manufacturing the above-described tape carrier with metal bumps will be described. First, a method of manufacturing a first tape carrier with metal bumps by a solder mask method and a method of manufacturing a semiconductor package using the same will be described in the order of steps with reference to FIGS.

First, as shown in FIG.
A material having a polyimide layer 22 having a thickness of 40 μm on one side of a copper foil 21 having a thickness of μm is prepared. Next, as shown in FIG. 2B, a hole 23 having a diameter of 300 μm reaching the copper foil surface was formed in the polyimide layer 22 by using a carbon dioxide gas laser in a portion where the bonding electrode was to be formed. The carbon adhering to the hole 23 and its periphery at the time of drilling by the carbon dioxide laser was mechanically removed by blasting.

The hole 23 preferably has a tapered inner wall. The hole 23 having such a tapered inner wall can be formed by irradiating a low energy carbon dioxide laser with a large number of pulses. Alternatively, it can be formed by defocusing and irradiating a carbon dioxide gas laser.

By appropriately adjusting the energy of the carbon dioxide laser, the number of pulses, and the degree of defocus,
It is possible to form a hole with an inner wall of any taper angle.

Next, as shown in FIG. 2C, a negative photosensitive dry film 24 having a thickness of 25 μm was formed on the copper foil surface.
After laminating, as shown in FIG. 2D, the photosensitive dry film 24 was exposed through a mask 25 in which the conductor circuit had a positive pattern. An ultra-high pressure mercury lamp was used as an exposure light source, and the irradiation amount was 80 mJ / cm ² .

Next, as shown in FIG. 3A, the photosensitive dry film 24 is immersed in 1 wt% Na ₂ CO _{3 at a} liquid temperature of 30 ° C.
The pattern plating resist 24 was formed by developing using an aqueous solution.

Then, as shown in FIG. 3B, a solder having a composition of tin 9 lead 1 is electroplated, and a solder pattern 26 a and a solder metal layer 2 each having a thickness of 4 μm are formed on both surfaces of the copper foil 21.
6b was formed. AS513 bath (trade name: manufactured by Ishihara Yakuhin Co., Ltd.) was used as a plating bath.

Then, as shown in FIG. 3C, the photosensitive dry film 24 was peeled off. As the stripping solution, a 3% NaOH aqueous solution at a liquid temperature of 45 ° C. was used. Then, FIG.
As shown in (d), a thickness of 50 mm is formed on the solder pattern 26a.
A negative photosensitive dry film 27 of μm was laminated.

Thereafter, as shown in FIG. 4A, a metal bump 29a for connecting to the semiconductor electrode pad is formed by an electroplating method. Film 27 was exposed. An ultra-high pressure mercury lamp was used as an exposure light source, and the irradiation amount was 160 mJ / cm ² . And FIG.
As shown in (b), the photosensitive dry film 27 was developed. As a developing solution, 1 wt% Na ₂ C at a liquid temperature of 30 ° C.
O ₃ aqueous solution was used.

Next, as shown in FIG.
Using a 13 type bath (trade name: manufactured by Ishihara Chemical Co., Ltd.), a solder having a composition of tin 6 lead 4 was electroplated to form a solder bump 29a having a thickness of 50 μm and a solder metal layer 29b having a thickness of 40 μm. Thereafter, as shown in FIG. 4D, the photosensitive dry film 27 was peeled off. As the stripping solution, a 3% NaOH aqueous solution at a liquid temperature of 45 ° C. was used. Then, as shown in FIG. 5A, the copper foil 21 was alkali-etched using the solder pattern 26a as an etching resist to obtain a desired tape carrier.

Then, as shown in FIG. 5B, the separately prepared semiconductor chip 30 was mounted on the above-described tape carrier shown in FIG. 5A. The semiconductor chip 30
An aluminum pad is provided on the periphery, and the surface of the aluminum pad is subjected to electroless Ni / Au plating.

The gap between the semiconductor chip 30 and the tape carrier was filled with a thermosetting resin, for example, an epoxy resin 31, to obtain a connection structure between the tape carrier and the semiconductor chip 30.

In the above manufacturing process, a tape carrier having solder bumps 29a formed on the copper pattern side is used, and Ni, which is alloyed with the solder bumps, is formed on the surface of the aluminum pad.
/ Au can be mounted collectively by a series of steps such as alignment / semiconductor chip mounting / reflow heating.

The tape carrier on which the semiconductor chips are mounted is thereafter cut out individually.

According to the first method of manufacturing a tape carrier with metal bumps by a solder mask method as described above, a metal bump with a metal bump having a columnar body having a side surface substantially perpendicular to the conductor pattern surface is provided. A tape carrier can be easily obtained. In addition, since the bumps are formed not on the already completed substrate but during the manufacturing process of the substrate, the metal bumps can be easily formed.

The example using the tape carrier with metal bumps formed by the solder mask method has been described above. Next, the method of manufacturing the second tape carrier with metal bumps by the electrodeposition photoresist method will be described with reference to FIG. To FIG.
Is shown with reference to FIG.

First, as shown in FIG.
A material having a 40 μm thick polyimide layer 42 on one side of a μm copper foil 41 is prepared. Then, a hole 43 having a diameter of 300 μm reaching the copper foil surface was formed in the polyimide layer 42 at a portion where the bonding electrode is to be formed, using a carbon dioxide gas laser. The carbon adhered to the hole 43 and its surroundings at the time of drilling by the carbon dioxide gas laser was mechanically removed by blasting.

Next, as shown in FIG. 6B, a negative photosensitive dry film 44 having a thickness of 50 μm is formed on the copper foil surface.
After laminating, as shown in FIG. 6C, the photosensitive dry film 44 was exposed through a mask 45 in which the metal bump portions had a positive pattern. An ultra-high pressure mercury lamp was used as an exposure light source, and the irradiation amount was 160 mJ / cm ² .

Next, as shown in FIG. 6D, the photosensitive dry film 44 is immersed in 1 wt% Na ₂ CO _{3 at a} liquid temperature of 30 ° C.
The pattern plating resist 44 was formed by developing using an aqueous solution.

Then, as shown in FIG. 7A, a solder having a composition of tin 6 lead 4 was electroplated to form a solder metal bump 46a having a height of 50 μm and a solder metal layer 46b having a thickness of 40 μm. AS513 bath (trade name:
(Ishihara Pharmaceutical Co., Ltd.).

Then, as shown in FIG. 7B, the photosensitive dry film 44 was peeled off. As the stripping solution, a 3% NaOH aqueous solution at a liquid temperature of 45 ° C. was used. Then, FIG.
As shown in (c), in order to form a circuit on the copper foil 41, an electrodeposition photoresist (Prime Coat AN-30) is used.
0: manufactured by Kansai Paint Co., Ltd.) 47 and electrodeposited at 80 ° C.
Drying was performed for 0 minutes.

Thereafter, as shown in FIG. 7D, the electrodeposited photoresist 47 was exposed through a mask 48 in which the conductor circuit had a negative pattern. An ultra-high pressure mercury lamp was used as an exposure light source, and the irradiation amount was 100 mJ / cm ² .

Then, the electrodeposited photoresist 47 is developed.
Then, as shown in FIG.
Formed. As a developing solution, 1 wt.
% Na ₂CO₃An aqueous solution was used. Next, FIG.
As shown, the electrodeposited photoresist pattern is used as a mask.
And use the exposed portion of the copper foil 41 with an alkaline etchant.
The circuit pattern was formed by etching with a solution.

Thereafter, the electrodeposited photoresist pattern was peeled off with a 3% aqueous solution of NaOH at a liquid temperature of 45 ° C.
As shown in FIG. 8C, a tape carrier with metal bumps was obtained.

Note that, in the steps of FIGS.
The electroplating in the step (a) is divided into two times, first Cu plating, then solder plating, and the lower layer is C
FIG. 9 shows an example of a tape carrier with bumps produced by exactly the same method except that u, a metal bump and a metal layer whose upper layer is made of solder are formed. In FIG. 9, 46a-
1 and 46b-1 are made of Cu, and 46a-2 and 46b-2 are made of lead 60 tin 40 solder.

According to the method for manufacturing a tape carrier with bumps by the electrodeposition photoresist method as described above, a tape carrier with metal bumps having a metal bump composed of a columnar body having a side surface substantially perpendicular to the conductor pattern surface. Can be obtained by a more simplified manufacturing process than the method of manufacturing a tape carrier with metal bumps by the solder mask method described above.

[0067]

According to the tape carrier with bumps and the method of manufacturing the same of the present invention, the following excellent effects can be obtained.

As described above, when the bump shape of the metal bump is spherical, the bump diameter is larger than the conductive pad width of the bump portion. Therefore, when the pitch between the bumps is reduced, the bumps may form a bridge. Also, when the distance between bumps becomes smaller,
Poor underfill filling properties, lower yield,
This leads to increased costs.

On the other hand, in the tape carrier of the present invention, since the metal bumps are columnar, the bumps themselves do not spread in the width direction. Can be done.

Further, during the heat cycle test, a stress caused by a difference in linear expansion coefficient between the circuit board and the semiconductor device acts on the bonding electrode portion, and the bonding electrode portion eventually breaks.

On the other hand, in the tape carrier of the present invention, in particular, when the metal bump and the metal layer of the bonding electrode portion have a multilayer structure, the uppermost layer is made of solder, and the lower layer is made of metal having a higher melting point than solder. Since the lower layer is not melted by heat at the time of connecting the semiconductor device to the circuit board, the thickness of the bonding electrode portion is increased, thereby improving the mechanical strength. As a result, it is possible to prolong the life of the bonding electrode portion until it breaks.

When the uppermost layer of the metal bump portion is made of solder for bonding to the semiconductor chip and the lower layer is made of a metal that does not melt due to heat at the time of solder connection, this high melting point metal layer is used. A spacer effect is provided, and a gap between the semiconductor chip and the conductor pattern can be secured. Thereby, the filling property of the underfill resin is improved, and the reliability of the bump bonding portion can be ensured.

Further, in the method of manufacturing a tape carrier with bumps according to the present invention, by using an electroplating method, the metal bump and the metal layer on the bonding electrode can be replaced by the same structure.
It can be formed simultaneously.

The method of manufacturing a tape carrier with bumps according to the present invention is characterized in that metal bumps are formed before forming a conductor pattern by etching.

As a method of forming a metal bump on a tape carrier on which a conductor pattern has already been formed, a method of forming a power supply pattern for electroplating, forming the bump by electroplating, and cutting the power supply pattern is known. is there. In this method, it may be difficult to form a power supply pattern depending on the shape of the conductor pattern. Further, a step for cutting the power supply pattern is required later.

As another method, there is a method in which a cream solder or a solder ball is placed at a bump forming position of a conductor pattern, and this is soldered. However, in this method, a solder resist layer must be formed in order to prevent the solder from spreading on the conductor pattern. In addition, the solder bumps formed by this method are spherical, and as described above, it is difficult to form the metal bumps at small intervals.

On the other hand, in the method of manufacturing a tape carrier with metal bumps according to the present invention, since the metal bumps are formed before forming the conductor patterns by etching, there is no need to provide a power supply pattern for electroplating. In addition, since the metal bumps are formed by electroplating without using brazing or the like, there is no need to form a solder resist layer to prevent the solder bumps from spreading over the conductor pattern, simplifying the manufacturing process. In addition, the columnar metal bump can be easily formed.

In particular, by forming a hole having a tapered inner wall in the insulating film and burying the bonding electrode therein, it is possible to improve the bonding strength between the bonding electrode and the solder bump.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a tape carrier with metal bumps according to an embodiment of the present invention.

FIG. 2 is a sectional view showing a manufacturing process of the tape carrier with metal bumps of the present invention in the order of steps.

FIG. 3 is a sectional view showing a manufacturing process of the tape carrier with metal bumps of the present invention in the order of steps.

FIG. 4 is a sectional view showing a manufacturing process of the tape carrier with metal bumps of the present invention in the order of steps.

FIG. 5 is a sectional view showing the manufacturing process of the tape carrier with metal bumps of the present invention in the order of steps.

FIG. 6 is a sectional view showing a manufacturing process of a tape carrier with metal bumps according to another embodiment of the present invention in the order of steps.

FIG. 7 is a sectional view illustrating a manufacturing process of a tape carrier with metal bumps according to another embodiment of the present invention in the order of steps.

FIG. 8 is a sectional view showing a manufacturing process of a tape carrier with metal bumps according to another embodiment of the present invention in the order of steps.

FIG. 9 is a sectional view showing a tape carrier with metal bumps according to another embodiment of the present invention.

FIG. 10 is a sectional view showing a semiconductor package using a conventional tape carrier.

FIG. 11 is a perspective view of a tape carrier of the present invention.

FIG. 12 is a sectional view showing a shape of a hole formed in an insulating film in the tape carrier with metal bumps of the present invention.

FIG. 13 is a cross-sectional view showing the number of wires that can be arranged depending on the presence or absence of a taper in a hole formed in an insulating film in the tape carrier with metal bumps of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Polyimide tape 2 ... Metal layer 3, 29a, 46a ... Metal bump 4 ... Electronic device 6 ... Metal pad 11 ... Insulating film 12 ... Copper pattern 13 ... Metal bump 14 ... Bonding electrode 21, 41 ... Copper foil 22, 42 ... Polyimide layers 23, 43 ... Hole 24, 27, 44 ... Photosensitive dry film 25, 28, 45, 48 ... Mask 26a ... Solder patterns 26b, 29b, 46b ... Metal layer 30 ... Semiconductor chip 31 ... Underfill resin (epoxy) 47) Electrodeposited photoresist 51 ... Terminal 61 ... Solder bump 71, 81 ... Wiring

Claims (17)

[Claims] 1. A tape carrier with bumps for mounting a semiconductor chip on a circuit board, comprising: an insulating film;
A conductor pattern formed on the insulating film, and a semiconductor chip connecting metal bump formed on the conductor pattern, wherein the metal bump has a columnar shape having a side surface substantially perpendicular to the conductor pattern surface. A tape carrier with a bump, comprising a body. 2. The conductive pattern has a terminal for connecting to a circuit board, a hole is provided in the insulating film below the terminal, and a bonding electrode is formed in the hole. The tape carrier with bumps according to claim 1, wherein the conductor pattern and the circuit board are connected via the joining electrode. 3. The insulating film according to claim 1, wherein the opening of the insulating film extends toward a side opposite to a terminal side of the insulating film.
The tape carrier with bumps according to claim 2, wherein the tape carrier has an inner wall having a taper angle of 15 ° or more. 4. The tape carrier with bumps according to claim 1, wherein said metal bumps are made of solder. 5. The metal bump and the bonding electrode,
3. The tape carrier with bumps according to claim 2, wherein each has a multilayer structure. 6. The tape carrier with bump according to claim 5, wherein the metal bumps include an uppermost layer made of solder and a lower layer made of a metal having a higher melting point than solder. 7. A method for manufacturing a tape carrier with bumps, comprising: an insulating film; a conductive pattern formed on the insulating film; and a metal bump for connecting a semiconductor chip formed on the conductive pattern. Forming a first photosensitive resin layer on a metal foil of a laminate comprising an insulating film and a metal foil; patterning the first photosensitive resin layer to form a first resin pattern for circuit formation; Forming, forming a metal pattern on the metal foil exposed from the first resin pattern by applying a first electroplating, removing the first resin pattern, and covering the entire surface including the metal pattern. Forming a second photosensitive resin layer, patterning the second photosensitive resin layer, and forming a second resin pattern such that only the metal bump formation portion is exposed; Forming a metal bump on the metal pattern exposed from the second resin pattern by performing electroplating of the second resin pattern, removing the second resin pattern, and using the metal pattern as a mask, A method for manufacturing a tape carrier with bumps, comprising the steps of: selectively removing a metal foil to form a metal foil pattern; and providing a conductor pattern in which the metal pattern and the metal foil pattern are stacked. 8. The method according to claim 8, further comprising, before the step of forming the first photosensitive resin layer, a step of forming a hole having a smaller diameter than a terminal of the conductor pattern at a predetermined position of the insulating film. The method for manufacturing a tape carrier with bumps according to claim 7. 9. A first metal layer is formed on the metal foil exposed in the hole by the first electroplating, and the first metal layer in the hole is formed by the second electroplating. 9. The method according to claim 8, wherein a second metal layer is formed on the layer. 10. A hole having a diameter smaller than a terminal of the conductor pattern is formed at a predetermined position of the insulating film after the step of forming the metal pattern and before the step of forming the metal bump. The method for manufacturing a tape carrier with bumps according to claim 7, further comprising a step. 11. The method according to claim 10, wherein a metal layer is formed on the metal foil exposed in the hole by the second electroplating. 12. The method according to claim 7, wherein the metal bump is made of solder. 13. A method for manufacturing a tape carrier with bumps, comprising: an insulating film; a conductive pattern formed on the insulating film; and a metal bump for connecting a semiconductor chip formed on the conductive pattern. Forming a first photosensitive resin layer on a metal foil of a laminate comprising an insulating film and a metal foil; patterning the first photosensitive resin layer so that only the metal bump formation portion is exposed Forming a first resin pattern, forming a metal bump on the metal foil exposed from the first resin pattern by electroplating, removing the first resin pattern, and removing the metal bump. Forming a second photosensitive resin layer on the entire surface including the electrode by an electrodeposition method; patterning the second photosensitive resin layer to form a second resin pattern for circuit formation Using the second resin pattern as a mask, selectively removing the metal foil to form a conductor pattern made of the metal foil pattern, the method comprising the steps of: . 14. The method according to claim 1, further comprising, before the step of forming the first photosensitive resin layer, a step of forming a hole having a smaller diameter than a terminal of the conductor pattern at a predetermined position of the insulating film. The method for manufacturing a tape carrier with bumps according to claim 13, wherein: 15. The method according to claim 13, wherein a metal layer is formed on the metal foil exposed in the hole by the electroplating. 16. The method according to claim 13, wherein the metal bump is made of solder. 17. A hole in the insulating film is formed so as to widen toward a side opposite to the metal foil side of the insulating film.
The method for producing a tape carrier with bumps according to claim 8, wherein the tape carrier is formed to have an inner wall having a taper angle of 5 ° or more.