JP2000040935A - Piezoelectric device - Google Patents

Piezoelectric device

Info

Publication number
JP2000040935A
JP2000040935A JP10206440A JP20644098A JP2000040935A JP 2000040935 A JP2000040935 A JP 2000040935A JP 10206440 A JP10206440 A JP 10206440A JP 20644098 A JP20644098 A JP 20644098A JP 2000040935 A JP2000040935 A JP 2000040935A
Authority
JP
Japan
Prior art keywords
film
electrode
pad electrode
piezoelectric
piezoelectric device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10206440A
Other languages
Japanese (ja)
Inventor
Koichi Iwata
浩一 岩田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Communication Equipment Co Ltd
Original Assignee
Toyo Communication Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Communication Equipment Co Ltd filed Critical Toyo Communication Equipment Co Ltd
Priority to JP10206440A priority Critical patent/JP2000040935A/en
Publication of JP2000040935A publication Critical patent/JP2000040935A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a piezoelectric device which is proper for cost reduction and miniaturization. SOLUTION: In a piezoelectric device, a piezoelectric substrate 2 and a container 3 containing the piezoelectric substrate 2 are installed, an exciting electrode, a pad electrode 8 and a lead electrode for electrically connecting the exciting electrode to the pad electrode 8 are installed on the surface of the piezoelectric substrate 2, a land electrode 10 for connection with the pad electrode 3 is installed in the container 3, and the pad electrode 3 and the land electrode 10 are connected electrically and mechanically by conduction bumps 9. This device has the structure of a metallic multilayer film, where a metallic film in which the pad electrode is integrally formed with the exciting electrode Ni 6 on the surface of the metallic film and a metallic film 7 formed of silver on the surface the Ni are formed. Thus, the film thickness of the pad electrode 8 is substantially made to be thick. Then, yield is improved, and the cost of the piezoelectric device can be reduced, since the peeling of the pad electrode 8 and the damage to the piezoelectric substrate 2 by shocks at forming of the conduction bumps can be prevented.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は圧電デバイスに関
し、特に、小型化に適した圧電デバイスに関する。
The present invention relates to a piezoelectric device, and more particularly, to a piezoelectric device suitable for miniaturization.

【0002】[0002]

【従来の技術】近年、携帯電話等の移動体通信機器は低
価格化、小型化が進んでおり、この要求に対応する為、
使用する部品も安価で小型なものを必要としている。こ
のような要求は信号選択手段として用いられるSAWフィ
ルタや、基準信号源として用いられる水晶振動子等の圧
電デバイスもその例外ではなく、例えば水晶振動子は、
それまで水晶基板とセラミック容器とを導電性接着剤や
ワイヤーボンディングによる接続手段に代わり、図3に
示す様に両者を導電性バンプを用いて接続して構成する
ことにより対応するようになった。
2. Description of the Related Art In recent years, mobile communication devices such as cellular phones have been reduced in price and miniaturized.
The parts to be used also need to be inexpensive and small. Such a requirement is not an exception for a SAW filter used as a signal selecting means and a piezoelectric device such as a quartz oscillator used as a reference signal source.
Until that time, the quartz substrate and the ceramic container were replaced by a connecting means using a conductive adhesive or a wire bonding, and as shown in FIG.

【0003】図3はバンプ接続方法を用いた従来の水晶
振動子の断面構成図を示すものである。同図に示す水晶
振動子100は、水晶基板101と、該水晶基板101
を収納する為の凹陥部を有するセラミック容器102
と、該セラミック容器102を封止する為の蓋103と
を備えている。前記水晶基板101の表面には、そのほ
ぼ中心部分に位置する励振電極と、端部に位置するパッ
ド電極104と、これら電極を接続するリード電極とが
Auまたは、Alから成る金属薄膜105により一体的
に形成されている。そして、前記パッド電極104の表
面にAuバンプ106を特定の圧力にて押し付けると同
時に、超音波振動による衝撃を加えることにより金属拡
散させて接続している。その後、前記Auバンプ106
と前記セラミック容器102内に設けたランド電極10
7とを特定の圧力で押し付けながら前記水晶基板101
側及び、前記セラミック容器102側の少なくともどち
らか一方からパルス熱を供給して熱圧着する。これによ
り前記励振電極とセラミック容器102の下部に設けた
水晶振動子100の機能端子108とが電気的に接続さ
れると共に、該水晶基板101が前記セラミック容器1
02に固着し収納される。このように水晶振動子100
を構成することにより前記水晶基板101の搭載面積は
小面積となり、水晶振動子100の小型化が実現されて
いる。
FIG. 3 is a cross-sectional view of a conventional crystal unit using a bump connection method. A quartz oscillator 100 shown in FIG. 1 includes a quartz substrate 101 and the quartz substrate 101.
Container 102 having a recess for accommodating
And a lid 103 for sealing the ceramic container 102. On the surface of the quartz substrate 101, an excitation electrode located at a substantially central portion thereof, a pad electrode 104 located at an end thereof, and a lead electrode connecting these electrodes are integrally formed by a metal thin film 105 made of Au or Al. Is formed. At the same time, the Au bump 106 is pressed against the surface of the pad electrode 104 with a specific pressure, and at the same time, the metal is diffused and connected by applying an impact by ultrasonic vibration. Then, the Au bump 106
And the land electrode 10 provided in the ceramic container 102
7 while pressing it with a specific pressure.
Pulse heat is supplied from at least one of the ceramic container 102 side and the ceramic container 102 side to perform thermocompression bonding. As a result, the excitation electrode and the functional terminal 108 of the crystal unit 100 provided below the ceramic container 102 are electrically connected, and the crystal substrate 101 is connected to the ceramic container 1.
02 and stored. Thus, the crystal unit 100
With this configuration, the mounting area of the crystal substrate 101 is reduced, and the size of the crystal unit 100 is reduced.

【0004】[0004]

【本発明が解決しようとする課題】しかしながら、上記
に説明した通り、Auバンプ106と前記パッド電極1
04との接続は両者を特定の圧力にて押し付けると共
に、超音波振動による衝撃を加えて行われる為、該圧力
及び、超音波振動の衝撃により、前記パッド電極104
に剥離が生じる場合があった。即ち、水晶基板101の
表面上に設ける前記パッド電極104の膜厚は励振電極
を形成する金属薄膜105の膜厚に依存する為、極めて
薄い。従って、この様な薄い金属薄膜105から成るパ
ッド電極104は、前記Auバンプ106を接続する際
の前記圧力及び、超音波振動の衝撃により生じる歪みに
耐えきれず剥離してしまう場合があった。特に、前記パ
ッド電極104がAl膜から成る場合は、該Al膜の表
面に存在する厚い酸化膜層を破ってAuバンプ106と
接続する為に、より強い圧力及び、超音波振動の衝撃を
必要とし、それ故に、上記問題がより生じ易くなると共
に、過大な衝撃により水晶基板101が破損してしまう
場合もあった。従って、同図の様な構造から成る水晶振
動子等の圧電デバイスは上記の様な問題により歩留りが
悪化し低価格化が達成されないという問題を生じていい
た。更に、前記金属薄膜107がAl膜から成る場合
は、上記の問題に加え、AlとAuとの金属化合物は機
械的に脆い為、水晶基板101とセラミック容器102
との接合強度が十分得られず、これにより水晶振動子の
十分な耐衝撃性が得られないという問題も生じる場合が
あった。本発明は上記の問題を解決する為になされたも
のであり、安価で耐衝撃性に優れる小型圧電デバイスを
提供することを目的としている。
However, as described above, the Au bump 106 and the pad electrode 1
Since the connection with the pad electrode 104 is performed by pressing both at a specific pressure and applying an impact by ultrasonic vibration, the pad electrode 104 is pressed by the pressure and the impact of ultrasonic vibration.
In some cases. That is, the thickness of the pad electrode 104 provided on the surface of the quartz substrate 101 is extremely small because it depends on the thickness of the metal thin film 105 forming the excitation electrode. Accordingly, the pad electrode 104 made of such a thin metal thin film 105 may not be able to withstand the pressure generated when the Au bump 106 is connected and the distortion caused by the shock of the ultrasonic vibration, and may be peeled off. In particular, when the pad electrode 104 is made of an Al film, a stronger pressure and an impact of ultrasonic vibration are required to break the thick oxide film layer existing on the surface of the Al film and connect to the Au bump 106. Therefore, the above problem is more likely to occur, and the crystal substrate 101 may be damaged by an excessive impact. Therefore, a piezoelectric device such as a quartz oscillator having a structure as shown in FIG. 1 has a problem that the yield is degraded due to the above-mentioned problem, and the cost cannot be reduced. Further, when the metal thin film 107 is made of an Al film, in addition to the above problems, the metal compound of Al and Au is mechanically fragile, so that the quartz substrate 101 and the ceramic container 102
In some cases, there is a problem that the bonding strength with the crystal resonator cannot be sufficiently obtained, whereby the crystal resonator cannot obtain sufficient impact resistance. The present invention has been made to solve the above-described problem, and has as its object to provide a small-sized piezoelectric device that is inexpensive and has excellent impact resistance.

【0005】[0005]

【課題を解決するための手段】上記課題を解決する為に
本発明に係わる請求項1記載の発明は、圧電基板の表面
に励振電極と、該励振電極とリード電極を介して接続し
たパッド電極とを備えると共に、該パッド電極と接続す
る為のランド電極を設けた容器に、導電性バンプにて電
気的及び機械的に接続した圧電デバイスに於いて、前記
パッド電極が金属多層膜から成ることを特徴としてい
る。請求項2記載の発明は請求項1記載の発明に加え、
前記パッド電極がAl膜とNi膜とAg膜とから成る金
属多層膜であることを特徴としている。請求項3記載の
発明は請求項1記載の発明に加え、前記パッド電極がA
u膜とNi膜とAg膜とから成る金属多層膜であること
を特徴としている。
According to a first aspect of the present invention, there is provided an electro-optical device comprising: an exciting electrode on a surface of a piezoelectric substrate; and a pad electrode connected to the exciting electrode via a lead electrode. In a piezoelectric device electrically and mechanically connected by conductive bumps to a container provided with land electrodes for connection with the pad electrodes, the pad electrodes are made of a metal multilayer film. It is characterized by. The invention described in claim 2 is the same as the invention described in claim 1,
The pad electrode is a metal multilayer film including an Al film, a Ni film, and an Ag film. According to a third aspect of the present invention, in addition to the first aspect, the pad electrode has an A
It is characterized by being a metal multilayer film composed of a u film, a Ni film and an Ag film.

【0006】[0006]

【本発明の実施の形態】以下、図示した実施例に基づい
て本発明を詳細に説明する。図1は本発明に基づく水晶
振動子の一実施例の断面構造図を示すものである。同図
に示す水晶振動子1は、水晶基板2と、該水晶基板2を
収納する為の凹陥部を有するセラミック容器3と、該セ
ラミック容器3を封止する為の蓋4とを備えている。前
記水晶基板2の表面には、そのほぼ中心部に位置する励
振電極と、端部に位置するパッド電極部分と、これら電
極を接続するリード電極とがAu又はAlから成る金属
薄膜5により一体的に形成されている。同図に示す前記
水晶振動子1が図3に示した従来の水晶振動子と異なる
点は、パッド電極部分の金属薄膜5の表面にNi膜6を
形成し、更に、その表面に金属膜としてAg膜7を形成
した金属多層膜を形成し、この3層から成る該金属多層
膜部分をパッド電極8としたところにある。この時、前
記Ni膜6及び、Ag膜7は蒸着方法を用いることによ
り容易に成膜することが可能である。尚、前記Ni膜6
を積層間に介在させる理由は、Al又は、Au膜の表面
上に直接Ag膜7を成膜した場合と比較して、薄膜間の
接合強度が得られる為である。この様にパッド電極8を
金属多層膜とすることにより、その他の前記励振電極及
び、前記リード電極の膜厚に影響することなく該パッド
電極8部分のみを実質的に厚膜形成した場合と等しい状
態となる。従って、前記パッド電極8の表面にAuバン
プ9を特定の圧力にて押し付け、更に、超音波振動を加
えて金属拡散させて接続する際に応力が生じた場合であ
っても、単層の薄い金属膜から成るパッド電極の場合と
比較して前記パッド電極8は、その膜厚が厚い為、剥離
し難くなる。更に、Ag膜7はAl膜と比較して、その
表面が酸化し難くいと共に、拡散速度が速い為、前記圧
力及び、超音波振動の衝撃を弱く設定しても容易にAu
バンプ9を形成することが可能である。前記Auバンプ
9の形成後は、該Auバンプ9と前記セラミック容器3
内に設けたランド電極10とを特定の圧力で押し付けな
がら前記水晶基板2側及び、前記セラミック容器3側の
少なくともどちらか一方からパルス熱を供給することに
より熱圧着する。これにより前記水晶基板1に設けた励
振電極とセラミック容器3の下部に設けた水晶振動子1
の機能端子11とが電気的に接続されると共に、該水晶
基板2が前記セラミック容器3に固着し、収納される。
そして、前記セラミック容器3を前記蓋4を用いて封止
することにより水晶振動子1が完成される。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail based on illustrated embodiments. FIG. 1 is a sectional structural view of an embodiment of a quartz oscillator according to the present invention. A crystal resonator 1 shown in FIG. 1 includes a crystal substrate 2, a ceramic container 3 having a recess for accommodating the crystal substrate 2, and a lid 4 for sealing the ceramic container 3. . On the surface of the quartz substrate 2, an excitation electrode located at a substantially central portion thereof, a pad electrode portion located at an end thereof, and a lead electrode connecting these electrodes are integrally formed by a metal thin film 5 made of Au or Al. Is formed. The crystal oscillator 1 shown in FIG. 3 is different from the conventional crystal oscillator shown in FIG. 3 in that a Ni film 6 is formed on the surface of a metal thin film 5 at a pad electrode portion, and further a metal film is formed on the surface. A metal multilayer film on which an Ag film 7 is formed is formed, and the metal multilayer film portion including the three layers is used as a pad electrode 8. At this time, the Ni film 6 and the Ag film 7 can be easily formed by using an evaporation method. The Ni film 6
The reason why is interposed between the stacked layers is that the bonding strength between the thin films can be obtained as compared with the case where the Ag film 7 is formed directly on the surface of the Al or Au film. By forming the pad electrode 8 as a metal multilayer film in this manner, it is the same as the case where only the pad electrode 8 is formed substantially thick without affecting the thickness of the other excitation electrodes and the lead electrodes. State. Therefore, even when the Au bump 9 is pressed against the surface of the pad electrode 8 at a specific pressure and stress is generated at the time of applying ultrasonic vibration to diffuse the metal, a single-layer thin film is formed. Since the thickness of the pad electrode 8 is larger than that of a pad electrode made of a metal film, the pad electrode 8 is less likely to peel off. Further, since the surface of the Ag film 7 is harder to be oxidized and the diffusion speed is faster than that of the Al film, even if the pressure and the shock of the ultrasonic vibration are set to be weak, the Ag film 7 can be easily Au.
The bump 9 can be formed. After the formation of the Au bumps 9, the Au bumps 9 and the ceramic container 3 are formed.
Thermocompression bonding is performed by supplying pulsed heat from at least one of the quartz substrate 2 side and the ceramic container 3 side while pressing the land electrode 10 provided therein at a specific pressure. Thus, the excitation electrode provided on the quartz substrate 1 and the quartz oscillator 1 provided below the ceramic container 3
And the quartz crystal substrate 2 is fixed to the ceramic container 3 and housed therein.
Then, the quartz resonator 1 is completed by sealing the ceramic container 3 using the lid 4.

【0007】また、本発明の説明として図3に示すよう
に平板の水晶基板を用いた水晶振動子を一実施例として
説明したが、本発明はこれに限るものではなく、図2に
示すように水晶基板2を該水晶基板2の一方の主面の適
所にエッチング等の手法を用いて凹陥部を形成し、該凹
陥部に残った薄肉の部分を振動部12とすると共に、該
振動部の周囲を支持する環状囲繞部とを一体形成したも
のを用いた水晶振動子であっても構わない。本発明の説
明として水晶振動子を一実施例にあげて説明したが、本
発明はこれに限るものではなく、SAWデバイス等のそ
の他の圧電デバイスであっても構わない。また、本発明
に基づく一実施例の中で、圧電デバイスを構成する圧電
材料として水晶を用いて説明したが、本発明はこれに限
るものではなく、ニオブ酸リチュウムやタンタル酸リチ
ュウム等のその他の圧電材料を用いた圧電デバイスであ
っても構わない。
Further, as an example of the present invention, a quartz oscillator using a flat quartz substrate as shown in FIG. 3 has been described as an embodiment. However, the present invention is not limited to this, and as shown in FIG. The quartz substrate 2 is formed with a recess in an appropriate position on one main surface of the quartz substrate 2 by using a technique such as etching, and the thin portion remaining in the recess is used as the vibrating section 12 and the vibrating section is formed. It may be a quartz crystal unit using an integrally formed annular surrounding portion for supporting the periphery of the crystal unit. Although a quartz oscillator has been described as an example of the present invention in the embodiments, the present invention is not limited to this, and other piezoelectric devices such as a SAW device may be used. Further, in one embodiment according to the present invention, quartz crystal was described as a piezoelectric material constituting a piezoelectric device, but the present invention is not limited thereto, and other materials such as lithium niobate and lithium tantalate may be used. A piezoelectric device using a piezoelectric material may be used.

【0008】[0008]

【発明の効果】以上説明したように前記請求項1記載の
発明は、圧電基板上に設けたパッド電極部分にNi膜と
その表面にAg膜から成る金属多層膜を設けることによ
り、厚膜なパッド電極が得られ、導電性バンプ形成時の
圧力及び、超音波振動の衝撃による前記パッド電極の剥
離が生じ難くなり、これにより圧電デバイスは容易に導
電性バンプを形成することが可能となると共に、歩留り
が改善されることにより、低価格化が実現されるという
効果を奏する。また、Al電極を備える圧電デバイスで
あっても、導電性バンプはAg膜上に強固に接続される
よう形成される為、機械的に強固に圧電基板が容器内に
固定され、これにより圧電デバイスは耐衝撃性が向上す
るという効果を奏すると共に、前記導電性バンプの形成
時の押し付ける圧力及び、超音波振動の衝撃を小さく設
定することが可能となり、パッド電極の剥離及び、圧電
基板の破損の発生が抑えられことによる歩留りの改善が
得られ、低価格化が達成されるという効果を奏する。
As described above, according to the first aspect of the present invention, a thick film is formed by providing a Ni film and a metal multilayer film made of an Ag film on the surface of the pad electrode provided on the piezoelectric substrate. A pad electrode is obtained, and the pressure at the time of forming the conductive bumps and the peeling of the pad electrode due to the impact of ultrasonic vibration are less likely to occur, whereby the piezoelectric device can easily form the conductive bumps. In addition, there is an effect that the price can be reduced by improving the yield. Further, even in a piezoelectric device having an Al electrode, since the conductive bumps are formed so as to be firmly connected to the Ag film, the piezoelectric substrate is mechanically and firmly fixed in the container. Has the effect of improving the impact resistance, and can set the pressure applied during the formation of the conductive bumps and the impact of the ultrasonic vibration to be small, thereby removing the pad electrode and breaking the piezoelectric substrate. It is possible to obtain an improvement in yield due to the suppression of occurrence, and to achieve an effect of achieving a reduction in price.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に基づく水晶振動子の一実施例の断面構
成図を示すものである。
FIG. 1 is a sectional view showing a configuration of an embodiment of a quartz oscillator according to the present invention.

【図2】本発明に基づく水晶振動子の他の一実施例の断
面構成図を示すものである。
FIG. 2 is a sectional view showing another embodiment of the quartz resonator according to the present invention.

【図3】従来の水晶振動子の断面構成図を示すものであ
る。
FIG. 3 is a cross-sectional configuration diagram of a conventional crystal unit.

【符号の説明】[Explanation of symbols]

1、100水晶振動子、2、101水晶基板、3、10
2セラミック容器、4103蓋、5、105金属薄膜、
6、Ni膜、7Ag膜、8、104パッド電極、9、1
06Auバンプ、10、107ランド電極、11、10
8機能端子、12振動部、
1,100 crystal oscillator, 2,101 crystal substrate, 3,10
2 ceramic container, 4103 lid, 5, 105 metal thin film,
6, Ni film, 7Ag film, 8, 104 pad electrode, 9, 1
06 Au bump, 10, 107 land electrode, 11, 10
8 function terminals, 12 vibrating parts,

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】圧電基板の表面に励振電極と、該励振電極
とリード電極を介して接続したパッド電極とを備えると
共に、該パッド電極と接続する為のランド電極を設けた
容器に、導電性バンプにて電気的及び機械的に接続した
圧電デバイスに於いて、前記パッド電極が金属多層膜か
ら成ることを特徴とする圧電デバイス。
A container provided with an excitation electrode on a surface of a piezoelectric substrate and a pad electrode connected to the excitation electrode via a lead electrode, and a land electrode for connecting to the pad electrode is provided in a container. A piezoelectric device electrically and mechanically connected by bumps, wherein the pad electrode is made of a metal multilayer film.
【請求項2】前記パッド電極がAl膜とNi膜とAg膜
とから成る金属多層膜であることを特徴とする請求項1
記載の圧電デバイス。
2. The semiconductor device according to claim 1, wherein said pad electrode is a metal multilayer film comprising an Al film, a Ni film and an Ag film.
The piezoelectric device as described.
【請求項3】前記パッド電極がAu膜とNi膜とAg膜
とから成る金属多層膜であることを特徴とする請求項1
記載の圧電デバイス。
3. The semiconductor device according to claim 1, wherein said pad electrode is a metal multilayer film including an Au film, a Ni film, and an Ag film.
The piezoelectric device as described.
JP10206440A 1998-07-22 1998-07-22 Piezoelectric device Pending JP2000040935A (en)

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Country Link
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WO2001067600A1 (en) * 2000-03-03 2001-09-13 Daishinku Corporation Crystal vibration device
GB2375885A (en) * 2001-05-24 2002-11-27 Samsung Electro Mech Quartz crystal resonator housing
JP2007096899A (en) * 2005-09-29 2007-04-12 Seiko Epson Corp Manufacturing method and bonding structure of piezoelectric vibration piece, and piezoelectric device
JP2010124180A (en) * 2008-11-19 2010-06-03 Seiko Instruments Inc Crystal vibration device
WO2011034104A1 (en) * 2009-09-18 2011-03-24 株式会社大真空 Piezoelectric vibration piece and manufacturing method of piezoelectric vibration piece

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001067600A1 (en) * 2000-03-03 2001-09-13 Daishinku Corporation Crystal vibration device
US6700312B2 (en) 2000-03-03 2004-03-02 Daishinku Corporation Quartz oscillator device
GB2375885A (en) * 2001-05-24 2002-11-27 Samsung Electro Mech Quartz crystal resonator housing
JP2007096899A (en) * 2005-09-29 2007-04-12 Seiko Epson Corp Manufacturing method and bonding structure of piezoelectric vibration piece, and piezoelectric device
JP2010124180A (en) * 2008-11-19 2010-06-03 Seiko Instruments Inc Crystal vibration device
WO2011034104A1 (en) * 2009-09-18 2011-03-24 株式会社大真空 Piezoelectric vibration piece and manufacturing method of piezoelectric vibration piece
US8618722B2 (en) 2009-09-18 2013-12-31 Daishinku Corporation Piezoelectric resonator plate and manufacturing method for piezoelectric resonator plate

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