JP2000036273A - Charged particle detection method and its device and treating method by charged particle beam and its device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To detect an accurate charged particle image, not including a noise component by irradiation of stimulating light, and not having a position shift by an electric charge to be charged, and having a high contrast, from a sample having an insulator. SOLUTION: This device is equipped with a charged-particle beam irradiation optical system for scanning irradiation of a charged-particle beam 2 toward a sample 11, charged-particle detectors 5, 6 for detecting charged particles generated from the sample 11 by scanning irradiation of the charged-particle beam 2 by the charged-particle beam irradiation optical system and for obtaining a charged-particle signal, a stimulating-light irradiation optical system for irradiating stimulating light for exciting and making conductive electrons in an insulator relative to the sample 11, and control means 61, 62, 67 for controlling so that a detection period of the charged particles by the charged-particle detectors 5, 6 or an irradiation period of the charged-particle beam 2 by the charged- particle beam irradiation optical system and an irradiation period of the stimulating light by the stimulating-light irradiation optical system will become different periods.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for efficiently detecting charged particles generated by irradiating a charged particle beam to a sample such as a semiconductor wafer, a mask, or a thin film substrate having an insulator. The present invention relates to a charged particle detection method and an apparatus for performing observation, inspection, processing, or analysis, and a processing method using a charged particle beam and an apparatus therefor.

[0002]

2. Description of the Related Art The prior art is disclosed in Japanese Patent Application Laid-Open No. 63-133.
640 (prior art 1), JP-A-1-119668
Japanese Unexamined Patent Application, First Publication No. Hei.

[0003] In the prior art 1, a semiconductor sample is irradiated with an electron beam, secondary electrons emitted from the sample are detected, and the potential of each part of the sample is evaluated. It describes that the charge accumulated on the sample surface by the irradiation of the electron beam is dissipated by the photoconductive effect of irradiating light from a light source such as a tungsten lamp or a tungsten lamp to prevent the charge.

Further, in prior art 2, in an ion implantation apparatus having an ion source, an ion analyzing section and an accelerating section, a low-pressure mercury lamp or an ArF laser is applied to the entire surface of a Si wafer whose set surface is covered with an insulating film of SiO _2. (Λ = 193
nm) UV light from a light source is irradiated to excite carriers in SiO ₂ , and + charges due to ion implantation are immediately discharged through a disk or a clamp, and defects caused by charge-up due to ion implantation (dielectric breakdown of thin SiO ₂ , etc.) ) Is described. That is, in the prior art 2, it is described that ultraviolet rays transmitting through SiO ₂ are used because energy needs to be incident on the interface between Si and SiO ₂ . Further, in the prior art 3, there is disclosed a method of irradiating an ion beam on a wiring correction portion where an insulating film is formed on a surface of a Si substrate of a semiconductor device in a processing chamber by performing an ion beam irradiation, and a hole formed by the sputtering process and a new hole. When a W wiring is formed by irradiating an ion beam in a gas atmosphere such as W (CO) _{6 at} a position where a suitable wiring is to be formed, it can be neutralized by electrons that excite the surface of the insulating film by irradiating ultraviolet rays. Has been described.

[0005] Further, in the prior art 4, dry etching, ashing, plasma CV
D, electron beam exposure, implantation, pure water cleaning, wafer SE
After performing a process of accumulating charges in any one of the semiconductor substrates of M, a wavelength of 398 to 141 nm when the insulating film is SiO ₂ , and 6 nm when the insulating film is SiN
It describes that the charged particles are charged up by irradiating ultraviolet rays having a wavelength of 17.3 to 246.9 nm.

[0006]

In recent years, wiring patterns formed on semiconductor substrates and the like have been increasingly miniaturized. Therefore, the surface of a sample such as a semiconductor substrate is irradiated with a charged particle beam composed of an ion beam or an electron beam, and charged particles such as secondary electrons and reflected electrons obtained from the sample are detected. Observing the surface of the sample based on the signal of
It is becoming necessary to analyze and perform processing such as correction. In a sample such as a semiconductor substrate, SiO 2
_At least a part of an insulating film such as ₂ or SiN is formed, and when the surface of the sample is irradiated with a charged particle beam composed of an ion beam or an electron beam, the sample is charged. However, in any of the above-mentioned prior arts 1 to 4, the surface of a sample such as a semiconductor substrate is irradiated with a charged particle beam composed of an ion beam or an electron beam to charge secondary electrons and reflected electrons obtained from the sample. When detecting the signal of the particles, it is possible to prevent the displacement of the charged particle signal caused by the electric charge charged on the insulator by the irradiation of the charged particle beam, and to generate the photoelectrons generated when the insulator is irradiated with the excitation light composed of ultraviolet rays. No consideration has been given to avoiding the effects of

[0007] An object of the present invention is to solve the above problems.
It enables accurate and high-contrast charged particle images to be detected from the sample without any noise components due to the excitation light irradiation and without any displacement due to the charged electric charge. It is an object of the present invention to provide a charged particle detection method and apparatus, and a charged particle beam processing method and apparatus, which enable processing such as observation, inspection, processing, or analysis for defects including. Another object of the present invention is to minimize damage to a lower layer of an insulating film made of SiO ₂ , SiN, or the like due to irradiation of excitation light with respect to a sample such as a semiconductor substrate. , And a high-contrast charged particle image can be detected from a sample having an insulator,
Provided is a charged particle detection method and apparatus, and a charged particle beam processing method and apparatus, which enable observation, inspection, processing, or analysis of defects including fine patterns and fine foreign substances on a sample. Is to do. Still another object of the present invention is to provide an accurate and high-contrast charged particle image having no noise component, and to detect a fine pattern and a defect including a fine foreign substance on a sample with high precision. It is an object of the present invention to provide a processing method and apparatus using a charged particle beam capable of performing processing.

[0008]

In order to achieve the above-mentioned object, the present invention provides a method for detecting charged particles generated from a sample by scanning and irradiating a charged particle beam to a sample having an insulator. It has a detection step of obtaining a signal, and a conduction step of exciting the electrons in the insulator by irradiating the sample with ultraviolet excitation light in a pulsed manner to conduct and release charges. This is a charged particle detection method. Further, the present invention provides a detecting step of detecting a charged particle generated from a sample by scanning and irradiating a charged particle beam to a sample having an insulator to obtain a charged particle signal, and exciting the sample with ultraviolet light. A step of exciting electrons in an insulator by irradiating light in a pulsed manner to conduct the electrons to release the charges by conducting the excitation, and detecting the charged particles in the detection process, while the excitation light in the conduction process is detected. This is a charged particle detection method characterized by irradiating with a pulse. Further, the present invention provides a detecting step of detecting a charged particle generated from a sample by scanning and irradiating a charged particle beam to a sample having an insulator to obtain a charged particle signal, and exciting the sample with ultraviolet light. A step of exciting the electrons in the insulator by irradiating light in a pulsed manner to conduct the electrons and release the electric charges, and a step of conducting the charge, in synchronization with the scanning of the charged particle beam in the detection step. This is a charged particle detection method characterized by irradiating excitation light in a pulsed manner.

The present invention also provides a detecting step of detecting a charged particle generated from a sample by scanning and irradiating a charged particle beam to a sample having an insulator to obtain a charged particle signal, and An ultraviolet excitation light is irradiated with the intensity of the excitation light varied with time to excite electrons in the insulator to be conductive and release electric charges, Particle detection,
A charged particle detection method is characterized in that the charged particle detection method is performed in synchronization with a temporal change in the intensity of the excitation light in the conduction process. Further, the present invention provides the above charged particle detection method,
It is characterized in that the charged particles are detected in the detection step during a period when the intensity of the excitation light in the conduction step is weakened. Further, the present invention provides a detection step of detecting a charged particle generated from a sample by scanning and irradiating a charged particle beam to a sample having an insulator to obtain a charged particle signal, and applying excitation light to the sample. A step of exciting the electrons in the insulator by irradiating the excitation light while changing the intensity of the excitation light with time to conduct and release electric charges, and irradiating the charged particle beam in the detection step. ,
A charged particle detection method is characterized in that the charged particle detection method is performed in synchronization with a temporal change in the intensity of the excitation light in the conduction process.

Further, the present invention is characterized in that, in the charged particle detection method, the charged particle beam is irradiated in the detection process during a period in which the intensity of the excitation light in the conduction process is weakened. Further, the present invention provides a detection step of detecting a charged particle generated from a sample by scanning and irradiating a charged particle beam to a sample having an insulator to obtain a charged particle signal, and applying excitation light to the sample. Irradiating the electrons in the insulator by irradiating to excite the electrons to conduct and release the electric charge. The detection period of the charged particles in the detection process is different from the irradiation period of the excitation light in the conduction process. The charged particle detection method is characterized in that the period is set to be as short as possible. Further, the present invention provides a detection step of detecting a charged particle generated from a sample by scanning and irradiating a charged particle beam to a sample having an insulator to obtain a charged particle signal, and applying excitation light to the sample. Having a conduction process of exciting the electrons in the insulator by conducting irradiation and conducting to release the electric charge, and irradiating the irradiation period of the charged particle beam in the detection process and the irradiation period of the excitation light in the conduction process. This is a charged particle detection method characterized by another period.

Further, the present invention provides a detecting step of detecting a charged particle generated from a sample by scanning and irradiating a charged particle beam to a sample having an insulator to obtain a charged particle signal, Irradiating the excitation light to excite the electrons in the insulator to make it conductive and release the electric charge. The charged particle detection method is characterized in that the charged particle image is adjusted according to the amount of displacement of the charged particle image caused by the above. Further, according to the present invention, in the above charged particle detection method, the wavelength of the excitation light in the conduction process is set to 150 nm or less, and the S
iO _2, characterized in that to minimize the damage to the underlying insulating film made of SiN or the like. In the case where the insulator is quartz or the like, the wavelength of the excitation light is set to 150 nm or less to enable conduction.

Further, the present invention provides the charged particle detection method, further comprising a processing step of performing at least one of observation, inspection, processing, and analysis based on the charged particle signal obtained from the detection step. This is a processing method using a charged particle beam. Further, the present invention provides the charged particle detection method, further comprising a processing step of irradiating a charged particle beam to a desired area on the sample set based on the charged particle signal obtained from the detection step to perform processing. This is a processing method using a charged particle beam characterized by having the above. Further, the present invention provides a stage on which a sample having an insulator is placed, a charged particle beam irradiation optical system for scanning and irradiating the sample with a charged particle beam, and a charged particle beam irradiation optical system for applying a charged particle beam by the charged particle beam irradiation optical system. A charged particle detector that obtains a charged particle signal by detecting charged particles generated from a sample by scanning irradiation, and a pulsed excitation light for exciting electrons in an insulator to make the sample conductive with the sample. And a pumping light irradiation optical system for irradiating the charged particle detection device.

Further, the present invention provides a stage on which a sample having an insulator is placed, a charged particle beam irradiation optical system for scanning and irradiating the sample with a charged particle beam, and a charged particle beam irradiation optical system. A charged particle detector that obtains a charged particle signal by detecting charged particles generated from a sample by scanning and irradiating a particle beam, and excitation light for exciting electrons in an insulator to the sample to make them conductive. An excitation light irradiating optical system that irradiates the excitation light in a pulsed manner, and control means that irradiates the excitation light by the excitation light irradiating optical system in a pulsed manner while detecting charged particles by the charged particle detector. Is a charged particle detection device. Also,
The present invention provides a stage on which a sample having an insulator is placed,
A charged particle beam irradiation optical system for scanning and irradiating the sample with a charged particle beam; and a charged particle signal generated by scanning and irradiating the charged particle beam with the charged particle beam irradiation optical system to detect charged particles generated from the sample. A charged particle beam detector, an excitation light irradiation optical system that irradiates the sample with an excitation light for exciting electrons in an insulator to make the sample conductive, and a charged particle beam irradiation optical system. A charged particle detection apparatus comprising: a control unit that irradiates the excitation light irradiation optical system in a pulsed manner in synchronization with the scanning of the charged particle beam.

The present invention also provides a stage on which a sample having an insulator is placed, a charged particle beam irradiation optical system for scanning and irradiating the sample with a charged particle beam, and a charged particle beam irradiation optical system. A charged particle detector that obtains a charged particle signal by detecting charged particles generated from a sample by scanning and irradiating a particle beam, and excitation light for exciting electrons in an insulator to the sample to make them conductive. The excitation light irradiation optical system that irradiates the excitation light by changing the intensity of the excitation light with time, and the detection of charged particles by the charged particle detector is performed by changing the intensity of the excitation light with the excitation light irradiation optical system over time. And a control means for performing the control in synchronization with the charged particle detection apparatus. Further, the present invention provides the charged particle detection device, wherein the control unit is configured to detect the charged particles by the charged particle detector during a period in which the intensity of the excitation light by the excitation light irradiation optical system is weakened. It is characterized by the following. The present invention also provides a stage on which a sample having an insulator is placed, a charged particle beam irradiation optical system that scans and irradiates the sample with a charged particle beam, and a charged particle beam irradiation optical system that emits a charged particle beam. A charged particle detector for detecting charged particles generated from a sample by scanning irradiation to obtain a charged particle signal, and an excitation light for exciting electrons in an insulator to make the sample conductive with the sample, The excitation light irradiation optical system that irradiates the excitation light with changing the intensity of the excitation light over time, and the irradiation of the charged particle beam by the charged particle beam irradiation optical system is performed by changing the intensity of the excitation light by the excitation light irradiation optical system over time. And a control means for performing the control in synchronization with the charged particle detection apparatus.

Further, the present invention provides the charged particle detection device, wherein the control means controls the irradiation of the charged particle beam by the charged particle beam irradiation optical system during a period in which the intensity of the excitation light by the excitation light irradiation optical system is weakened. Is performed. The present invention also provides a stage on which a sample having an insulator is placed, a charged particle beam irradiation optical system that scans and irradiates the sample with a charged particle beam, and a charged particle beam irradiation optical system that emits a charged particle beam. A charged particle detector that obtains a charged particle signal by detecting charged particles generated from a sample by scanning irradiation, and irradiating the sample with excitation light for exciting electrons in an insulator to make the sample conductive. An excitation light irradiation optical system, and a control means for controlling the detection period of the charged particles by the charged particle detector and the irradiation period of the excitation light by the excitation light irradiation optical system to be different periods. It is a charged particle detection device characterized by the following. The present invention also provides a stage on which a sample having an insulator is placed, a charged particle beam irradiation optical system that scans and irradiates the sample with a charged particle beam, and a charged particle beam irradiation optical system that emits a charged particle beam. A charged particle detector that obtains a charged particle signal by detecting charged particles generated from a sample by scanning irradiation, and irradiating the sample with excitation light for exciting electrons in an insulator to make the sample conductive. An excitation light irradiation optical system, and control means for controlling the irradiation period of the charged particle beam by the charged particle beam irradiation optical system and the irradiation period of the excitation light by the excitation light irradiation optical system to be different periods. A charged particle detection device characterized in that:

Further, the present invention provides a stage on which a sample having an insulator is placed, a charged particle beam irradiation optical system for scanning and irradiating the sample with a charged particle beam, and a charged particle beam irradiation optical system. A charged particle detector that obtains a charged particle signal by detecting charged particles generated from a sample by scanning and irradiating a particle beam, and excitation light for exciting electrons in an insulator to the sample to make them conductive. An excitation light irradiating optical system for irradiating the sample, and control means for controlling a dose of the excitation light by the excitation light irradiating optical system in accordance with a charge amount on the sample or a displacement amount of a charged particle image caused by the charge amount. A charged particle detection device.
Further, the present invention provides a stage on which a sample having an insulator is placed, a charged particle beam irradiation optical system for scanning and irradiating the sample with a charged particle beam, and a charged particle beam irradiation optical system for applying a charged particle beam by the charged particle beam irradiation optical system. A charged particle detector that detects charged particles generated from a sample by scanning irradiation and obtains a charged particle signal, and an excitation light for exciting electrons in an insulator to make the sample electrically conductive with the sample. A charged particle detection device comprising: an excitation light irradiation optical system that irradiates a particle beam with light from a substantially coaxial direction.
Further, the present invention provides the above-described charged particle detection device, wherein the excitation light emitted from the excitation light irradiation optical system has a wavelength of 150 n.
m or less, and Si
It is characterized in that damage to the lower layer of the insulating film made of O ₂ , SiN or the like is minimized. In the case where the insulator is quartz or the like, the wavelength of the excitation light is set to 150 nm or less to enable conduction.

Further, the present invention is characterized in that the excitation light source of the excitation light irradiating means in the charged particle detection device is constituted by an excimer lamp. Further, the present invention is characterized in that, in the above charged particle detection device, the excitation light irradiation means is configured to irradiate a desired region on the sample with the excitation light from a plurality of directions. Further, the present invention is characterized in that, in the charged particle detection device, the excitation light irradiating means is configured to scan and irradiate the sample with the excitation light. Further, the present invention provides the above charged particle detection device,
The charged particle beam processing apparatus further includes a processing unit that performs at least one of observation, inspection, processing, and analysis based on the charged particle signal obtained from the charged particle detector. .

Further, according to the present invention, the charged particle beam detecting device further controls the charged particle beam irradiating optical system based on the charged particle signal obtained from the charged particle detector so that the charged particle beam is irradiated on the sample. And a control means for irradiating a desired area to perform processing. Further, the present invention is characterized in that, in the above charged particle detection device, the excitation light irradiating means is configured to irradiate the excitation light to a region including a grounded conductor. Further, the invention is characterized in that the grounded conductor is a probe or a gas nozzle.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a charged particle detection method and apparatus according to the present invention, a processing method for observation, inspection, processing, or analysis using a charged beam and an apparatus thereof will be described with reference to the drawings. In this embodiment, the ion beam 2 or the electron beam 10 is used as a charged beam.
2 as the sample 11 having an insulator, for example, phase shift masks 20 and 26 and a TFT (Thin Film).
A process such as observation, inspection, or analysis based on the charged particle image and processing such as defect correction by ion beam or electron beam irradiation are performed on the substrate 60 or the semiconductor wafer 49.

<First Embodiment> A first embodiment according to the present invention will be described with reference to FIG. That is, in FIG.
In the ion beam chamber 16, for example, an ion source 1 such as Ga, an electrode for controlling the current of the ion beam 2 extracted from the ion source 1, a lens 3 for focusing the ion beam 2, and the ion beam 2 are provided. There is an ion beam optical system including a deflection electrode 4 for deflection and a blanking electrode for controlling ON / OFF of the ion beam.
These components 1, 3, 4, and the like are controlled by a power supply and a control device (controller) 61 (not shown). Also,
Inside the ion beam chamber 16, via an exhaust pipe 17,
It is evacuated by a vacuum exhaust device.

In the process chamber 15, a holder 12 for mounting a sample 11 (20) to be corrected, a clamp 13 for fixing the sample 11, and a stage 14 for moving the sample 11 to an arbitrary position. And a secondary charged particle detector including a scintillator 5 and a photomultiplier tube 6 for detecting secondary charged particles emitted from the sample 11 by scanning irradiation of the ion beam 2, and a sample included on the sample 11. There is a reflecting mirror 9a for irradiating light 8 for exciting electrons in the insulator. And the process chamber 15
The light 8 emitted from the excitation light source 7 attached to the sample 11 is reflected by the reflecting mirror 9a to irradiate the sample 11 uniformly. The excitation light source 7 may be an excitation light optical system including a spectroscope and a lens. The wavelength of the excitation light 8 emitted from the excitation light source 7 may be a wavelength that excites the insulator 20a of the sample 11 (20).
When is quartz, ultraviolet light of 150 nm or less is desirable in order to excite electrons in the valence band (full body) to the conduction band and make the electrons conductive. The reflecting mirror 9a has an ion beam 2
There is a passage hole 10 for letting through. The process chamber 15 is evacuated to a vacuum by a vacuum device (not shown) via an exhaust pipe 17. By the way, the secondary charged particle detector including the scintillator 5 and the photomultiplier tube 6 detects the secondary charged particles emitted from the sample 11 by scanning the ion beam by the deflection electrode 4 of the ion beam optical system. The CPU 62 can obtain a secondary charged particle image. By displaying the secondary charged particle image on the monitor 63, the CPU 62 can observe the surface pattern image of the sample 11 and observe the image of the defect 22. You can also.

In particular, the secondary charged particles emitted differ depending on the unevenness of the surface of the sample 11 and the material.
A secondary charged particle image of the phase shifter pattern 21 on the insulating transparent substrate 20a such as a glass substrate and the pattern of the metal film 20b such as Cr thereon is obtained. The CPU 62 compares the secondary charged particle image with a reference pattern image obtained from CAD information or the like input by a recording medium, a network 66, or the like, on the monitor 63 or in an image processing circuit (not shown), and finds a mismatch. Defect 22
Can also be found and tested. In particular, by designating the defect 22 found on the monitor 63 by the input means 64, the CPU 62 obtains the position information and the like of the defect 22 and can perform the inspection. Spare room 1
9 denotes a process chamber 1 via a gate valve 18.
5 so that the holder 12 can be introduced onto the stage 14 by a transport system (not shown).

Referring to FIG. 1B, a method of observing, inspecting, and processing a sample composed of the substrate 11 (20) containing an insulator using an ion beam using the apparatus of the first embodiment will be described in detail. FIG. 1B is a detailed view of an ion beam irradiation region. In FIG. 1B, a phase shift mask 20 includes an insulating transparent substrate 20a formed of a glass substrate or the like having a phase shifter pattern 21 and a circuit pattern formed thereon. And a conductive light-shielding film (metal film) pattern 20b that forms Reference numeral 22 denotes a defect in the phase shifter. Incidentally, reference numeral 23 denotes a power supply for applying a voltage to the scintillator, and 24 denotes a power supply for applying a voltage to the reflecting mirror 9a. For example, if there is a defect 22 in the phase shifter 21 in the phase shift mask 20, the phase amplitude of the light transmitted through the defective part is greatly shifted. Therefore, this defect 22
Need to be corrected.

When the ion beam 2 is used to correct the defect 22, first, the position of the defect 22 is detected in advance by a defect inspection device (not shown). When an SEM is used as a defect inspection device, the ion beam processing device (ion beam defect correction device) according to the present embodiment is used in a state where charges are accumulated on the phase shift mask 20.
There is also a possibility that it will be carried into. Also, when transporting the phase shift mask, charges may be accumulated on the phase shift mask 20. In any case, a defect 22
The phase shift mask 20 whose position has been detected is carried into the ion beam processing apparatus (ion beam defect correction apparatus) according to the present embodiment, mounted on the holder 12 on the stage 14 and fixed by the clamp 13. Become. Further, position information and the like of the defect 22 detected by the defect inspection apparatus are input to the CPU 62 via a recording medium or a network 66 and stored in the storage device 65 or the like. The CPU 62 issues a control command to the control device 67 based on the coordinate data of the defect position stored in the storage device 65 to drive and control the stage 14 so that the position considered to be defective is located below the optical axis of the ion beam 2. Move to

Next, since there is a possibility that electric charges may be accumulated on the insulator 20a of the phase shift mask 20 before being carried in as described above, the CPU 62 first issues an excitation command to the excitation light source 7. The excitation light source 7 emits a signal to emit excitation light 8 for exciting electrons in the insulator from the excitation light source 7 as shown by 90 in FIG. 10 and irradiates the loaded and mounted sample 20. The excitation light source 7 excites Ar gas and
In the case of an excimer lamp that emits 6 nm excitation light,
For example, it is necessary to perform pumping at a period of about 10 to 50 μs. As described above, the excitation light 8 for exciting the electrons in the insulator is coaxially and uniformly irradiated on the ion beam irradiation area on the sample 20 by the reflecting mirror 9a, and is grounded by the holder 12 or the clamp 13. The insulating transparent substrate (insulator) 20 is irradiated by irradiating the conductive light-shielding film 20b.
a is grounded. That is, in the insulator 20 a in the sample 20, the electrons in the valence band (filled body) are excited to the conduction band by the irradiated excitation light 8 to be made conductive (electronic electric conduction occurs). The electric charges accumulated on the insulating transparent substrate 20a escape to the ground via the conductive light-shielding film 20b without being accumulated in the insulator 20a. As a result, the electric charge accumulated before being carried in can be released.

Since the circuit pattern formed on the phase shift mask 20 is miniaturized, the phase shift mask 20 is used for an excimer laser projection exposure apparatus. Therefore, the phase shift mask 20
Insulating transparent substrate 20a needs to be formed of a quartz substrate. As described above, when the insulator 20a is quartz, the wavelength of the excitation light 8 is set to 150 nm in order to excite electrons in the valence band (filled body) to the conduction band and make it conductive (electronic electric conduction occurs). The following ultraviolet light is desirable. for that reason,
The excitation light source 7 excites Ar gas to 126 nm
Excimer lamp that emits excitation light, or the third harmonic of Nd: YAG laser (for example, VUV light of 118.2 nm)
Alternatively, an excimer laser light source of Ar ₂ (excitation light of 126 nm), a Kr ₂ excimer laser light source (excitation light of 146 nm), or the like may be used. In particular, in the case of a laser beam, the dose may be reduced by scanning at a high speed so as not to be processed, or the laser beam may be diffused using a diffusion plate such as MgF ₂ or LiF.

In order to set a processing area (defect removal correction area) by the ion beam 2, it is necessary to observe a secondary charged particle image (consisting of M × N pixels) as shown in FIG. At this time, charges are accumulated on the insulating transparent substrate 20a due to the irradiation of the ion beam 2. By the way, when observing this secondary charged particle image, C
By controlling the deflection electrode 4 by the control device 61 in accordance with the observation region control command from the PU 62, 0.3 to 0.05 μm
The ion beam spot 80 narrowed to about m is shown in FIG.
As shown in FIG. 1, by repeating N scanning lines in the y direction while scanning in the x direction, the secondary charged particle detectors 5 and 6 form a two-dimensional secondary charged particle image (consisting of M × N pixels). Will be detected. However, at this time, there is a blanking period in which the surface of the sample 20 is not irradiated with the ion beam due to the control of the blanking electrode by the control device 61, as indicated by the dotted line. Therefore, the CPU 62
As shown in FIG. 10, an excitation command signal is issued to the excitation light source 7 using this blanking period, and as shown at 91, the excitation light 8 pumped and emitted from the excitation light source 7 is supplied to the sample 20. To make the insulator 20a conductive, and the charges accumulated on the insulator 20a due to the irradiation of the ion beam 2 can be released to the ground via the conductive light-shielding film 20b. In FIG. 10, the excitation light 8 is applied during one blanking period of each scanning line. However, the excitation light 8 may be applied during two or three blanking periods of each scanning line. .

As described above, when the intensity of the excitation light 8 is reduced or the irradiation is not performed, the ion beam 2 is two-dimensionally scanned and irradiated as shown by a solid line in FIG. The secondary charged particles are detected by the secondary charged particle detectors 5 and 6, and the control device 6 is controlled by the CPU 62.
The secondary charged particle signal detected by the secondary charged particle detectors 5 and 6 based on the two-dimensional scanning signal of the ion beam obtained from Step 1 is a two-dimensional scanning secondary charged particle image (two-dimensional scanning). An image memory or storage device 65
By outputting it to the monitor 63, a two-dimensional scanned secondary charged particle image (two-dimensional scanned ion image) can be observed. Here, the reflecting mirror 9a is arranged substantially coaxially with respect to the optical axis of the ion beam 2,
In addition, a voltage is applied to the reflecting mirror 9a by the power supply 24, and the surface of the reflecting mirror 9a is formed of a material having a high probability of secondary charged particle emission. The particles can be amplified, and as a result, the secondary charged particles amplified by the secondary charged particle detectors 5 and 6 can be detected.
Further, as shown in FIG. 12, when changing the intensity of the excitation light 8 emitted from the excitation light source 7 over time, the CPU 62 uses the secondary charged particle detectors 5 and 6 based on the scanning irradiation of the ion beam 2. The detection of the secondary charged particles is synchronized with the intensity of the excitation light 8. For example, when the intensity of the excitation light 8 is weakened, the detection by the secondary particle detectors 5 and 6 based on the scanning irradiation of the ion beam 2 is performed. By doing so, effective secondary charged particle detection becomes possible.

As described above, when the secondary charged particles are detected, the irradiation position of the ion beam 2 shifts because the charge of the ion beam 2 is not accumulated (charged up) on the insulating transparent substrate 20a. Without this, a normal secondary charged particle image can be detected by the secondary charged particle detectors 5 and 6, and the ion beam irradiation area can be set with high accuracy. When removing and correcting the defect 22, the metal film pattern 20b
Or a new defect caused by damaging the phase shift pattern 21 can be prevented. In addition, when the secondary charged particles are detected, basically, since the excitation light 8 is not irradiated, no photoelectrons are emitted by the photoelectron effect, so that it is possible to prevent the photoelectrons from becoming noise. Since the scanning irradiation of the ion beam 2 is for observing the secondary charged particle image, the dose of the ion beam 2 to the sample 20 (11) is reduced (the ion beam current is reduced or the scanning speed is increased). Can be performed), and the charge on the insulator 20a can be reduced. As a result, the time for irradiating the excitation light 8 can be shortened. Therefore, only by irradiating the excitation light 8 during the blanking period, it is possible to release the electric charge charged on the insulator 20a.

Next, processing (defect removal and correction) by the ion beam 2 will be described. That is, since the CPU 62 stores the secondary charged particle image obtained by the above procedure in the image memory or the storage device 65 or the like, the CPU 62 displays an enlarged image of the stored secondary charged particle image on the monitor 63 or the like. For example, from the enlarged image of the displayed secondary charged particle image, for example, an image indicating the shape and position of the defect 22 of the phase shifter can be observed and detected. Therefore, on the screen of the monitor 63, the irradiation area of the ion beam 2 is set using, for example, an electron beam frame or the like using the shape and position information of the defect 22 to be detected. Then, the CPU 62 controls the deflection electrode 4 and the like with the control device 61 to irradiate only the defect portion with the ion beam 2 to remove the defect 22 based on the information on the set irradiation region of the ion beam 2. Can be modified. In the above description, the case where the irradiation area of the ion beam 2 is set on the screen of the monitor 63 has been described. However, in the image processing circuit of the CPU 62, the secondary charged particles emitted due to the unevenness and the material are different. Since the shape and position of the defect 22 can be automatically extracted based on the particle image, the irradiation area of the ion beam 2 can be automatically set. When removing and correcting the defect 22 by scanning and irradiating the ion beam 2, the irradiation with the excitation light 8 does not affect the removal and repair of the defect. Therefore, as shown by 92 in FIG. Irradiates the insulator 20a, including the defective portion, to make the insulator 20a conductive, so that charges due to the scanning irradiation of the ion beam 2 escape through the conductive light-shielding film 20b without being accumulated in the defective portion, and as a result the The irradiated area is accurately irradiated with the ion beam 2 to perform highly accurate defect correction. However, it is clear that a blanking period may be provided when the defect 22 is removed and repaired.

If it is necessary to observe the secondary charged particle image during the removal and repair of the defect 22, the excitation light 8 is irradiated during the blanking period in the same manner as the secondary charged particle image observation before the removal and repair. Good. Also, in order to confirm whether the defect 22 has been correctly corrected after the removal and correction,
When the next charged particle image observation is performed, the excitation light 8 may be irradiated during the blanking period as in the case of the secondary charged particle image observation before removal correction. As described above, the first embodiment can be applied to observation, inspection, processing, or analysis based on the irradiation of the ion beam 2.

<Second Embodiment> A second embodiment according to the present invention will be described with reference to FIG. In the second embodiment, the first
The difference from the embodiment is that the sample 11 (20) is irradiated with excitation light from a plurality of directions. That is, a part of the excitation light 8 emitted from the excitation light source 7 is
And the others are branched to the scintillator 5, and the excitation light incident on the prism 25 is refracted to irradiate the ion beam irradiation area below the optical axis of the ion beam 2 by the refraction, and the excitation light applied to the scintillator 5 is reflected on the scintillator surface. The light is reflected by the film and irradiated to the ion beam irradiation area from a direction different from the light irradiated from the prism 25. By irradiating the excitation light 8 from the two opposite directions in this manner, even if there is a deep hole formed in the insulating transparent substrate 20a in the area where the secondary charged particle image is observed, the excitation light 8 Is irradiated to the inside of the deep hole and the valence band (full body)
Since the electrons inside are excited to the conduction band and are made conductive (electronic electrical conduction occurs), the electric charge accumulated at this location is not accumulated in the insulator 20a and passes through the conductive light-shielding film 20b. To escape to the ground.

Accordingly, as shown in FIG. 10 or 12, when scanning and irradiating the ion beam 2 for observation, the intensity of the excitation light 8 is reduced or shielded (not irradiated), and the surface of the sample 11 (20) is reduced. If the secondary charged particles emitted from the detector are detected by the secondary charged particle detectors 5 and 6, an accurate and noise-free two-dimensional scanned secondary charged particle image (two-dimensional scanned ion image) can be obtained. Can be. In the second embodiment, the optical components are used to irradiate the excitation light for exciting the electrons in the insulator from a plurality of directions. However, the irradiation may be performed by a plurality of excitation light sources.

<Third Embodiment> A third embodiment according to the present invention will be described with reference to FIG. Here, an embodiment will be described in which the ion beam 2 is used as a charged beam, the excitation light 8 generated from the plasma 30 is irradiated on the sample 11 having an insulator from multiple directions, and observation, inspection, processing, or analysis is performed.
That is, in the third embodiment, the plasma generator 26 is used as a device for generating the excitation light 8. An object 11 (20) made of an insulating sample having a metal film pattern 20b formed on the surface is mounted on the holder 12. The holder 12 is mounted on a transparent material 27 such as MgF ₂ or LiF that transmits the excitation light 8. Plasma generator 26
The electrode 2 for forming a plasma chamber 29 between the stage 14 and the permeable material 27 and generating a plasma 30
8 and a high-frequency power supply 31 connected to one of the electrodes. Note that the wavelength of the excitation light 8 emitted from the plasma 30 needs to include a wavelength that can excite the insulator 20b.

By the way, the focused ion beam 2 is scanned and irradiated on the sample 11 having an insulator, and secondary charged particles generated from the sample 11 are detected by the secondary charged particle detectors 5 and 6 for observation and observation. Inspection can be performed, and processing can be performed by scanning and irradiating a predetermined region with a focused ion beam. When this processing is performed in an etching gas atmosphere, the etching action can be promoted and fine processing can be performed. When processing is performed in a CVD gas atmosphere, CVD film formation can also be performed. The gas assisted etching and the CVD film formation can be applied to the first and second embodiments. Further, by installing the secondary ion mass spectrometer in the process chamber (sample chamber) 15, the secondary ion mass spectrometer measures the mass of the secondary ions generated from the irradiation of the focused ion beam 2. Can be analyzed by This 2
The secondary ion mass spectrometer can also be applied to the first and second embodiments. In any case, a portion to be observed, inspected, or analyzed of the sample 11 having an insulator is moved below the optical axis of the ion beam 2 and the portion is irradiated with the ion beam 2 to accumulate charges. Will be done. Therefore, for example, the sample 11
When the surface is observed, inspected, or analyzed based on the secondary charged particle image, the charge charged up causes the secondary charged particle observation image to shift.

Therefore, when observing, inspecting, or analyzing based on the secondary charged particle image, during the period in which the ion beam 2 is not irradiated (eg, blanking period), the sample 1
The plasma 30 is ignited in the lower plasma chamber 29, and the excitation light 8 radiated from the ignited plasma 30 is transmitted through the transparent material 27 and reflected by the reflecting mirror 9b fixed to the chamber 15. The conductive thin film 20b grounded by the clamp 13 or the holder 12 including the ion beam irradiation region (insulator region) on the sample 11 from multiple directions
Alternatively, the light is irradiated to the clamp 13 which is grounded. Then, similarly to the above embodiment, the insulator 20 in the sample 11 is formed.
a is made conductive by the excitation light 8 and allows the accumulated charges to escape to the ground without accumulating in the insulator, so that accurate and noise-free two-dimensional scanning secondary charged particles An image can be obtained.

In short, also in this embodiment, the irradiation time of the excitation light 8 is set to be different from the time of scanning and irradiation of the ion beam, so that the irradiation position of the ion beam 2 is not shifted and the secondary charged particles are not shifted. It is possible to detect a normal secondary charged particle image by the detectors 5 and 6,
The ion beam irradiation area can be set with high precision to realize high-precision processing. In addition, when secondary charged particles are detected, photoelectrons are emitted by the photoelectron effect because the excitation light 8 is basically not irradiated. Since this is not performed, it is also possible to prevent the photoelectrons from becoming noise. By the way, plasma chamber 2
9 moves together with the sample 11 mounted on the holder 12 by the drive stage 14, so that the position where the plasma 30 is generated moves with respect to the optical axis of the ion beam 2. However, the reflecting mirror 9b is formed so as to reflect the excitation light 8 contained in the plasma and always irradiate the vicinity of the optical axis of the ion beam 2 on the sample 11 even if the position where the plasma 30 is generated moves. That's not a problem. The stop of the irradiation of the excitation light can be performed by stopping the supply of the high-frequency power from the high-frequency power supply 31 to the electrode 28 or by closing the shutter 70 provided on the optical path of the excitation light from the transparent material 27. it can.

Next, the quantity of the excitation light 8 necessary for preventing the electrification,
The calculation of the irradiation time and its control will be described. That is, a reference sample is previously mounted on the holder 12, an uncharged secondary charged particle image is detected from the reference sample, and stored in a storage device 65 such as an image memory. The secondary charged particle image is detected and stored in a storage device 65 such as an image memory, and the CPU 62 moves the secondary charged particle image by charging from the difference image between the two charged particle images. The amount is calculated manually (for example, on the screen of the monitor 63) or calculated automatically,
Based on the obtained movement amount, the light amount of the excitation light 8 and the irradiation time necessary for preventing the charge are calculated. In addition, the charge (charge amount) charged on the sample 11 to be actually processed or the insulator 20b of the reference sample is measured, and the measured charge is input to the CPU 62. And the irradiation time can be calculated in advance. As described above, the CPU 62 calculates the amount of the excitation light 8 and the irradiation time necessary for preventing the electrification in advance, so that the CPU 62 calculates the calculated excitation light 8
By controlling the plasma generator 26 or the shutter 70 based on the amount of light and the irradiation time, any one of the observation, inspection, processing, and analysis of a desired region by the irradiation of the ion beam 2 in an uncharged state is always performed. Will be able to do that.

The calculation and control of the amount of the excitation light 8 and the irradiation time necessary for the antistatic described above can be applied to the first and second embodiments. In the third embodiment, as shown in FIG. 3, the case where the plasma 30 as the excitation light source is placed on the back surface of the sample 11 is shown.
If the inspection and processing are not affected, a plasma chamber 29 may be placed above the sample 11 and the surface of the sample 11 may be irradiated with the excitation light 8 radiated from the plasma 30. When plasma is used as the ion source of the ion beam 2,
If the plasma contains the excitation light 8, the excitation light may be guided to the surface of the sample 11 using another optical system.

<Fourth Embodiment> A fourth embodiment according to the present invention will be described with reference to FIG. That is, in the fourth embodiment, the excitation light 8 emitted from the excitation light source 7 is irradiated on the defect of the phase shift mask 20 coaxially with the ion beam as the charged beam by the kaleidoscope 32a.
Accordingly, the surface of the sample 11 is irradiated with the ion beam 2 through a hole provided in the kaleidoscope 32a. Observation, inspection, processing, analysis, etc. of the sample 11 performed in the correction of the defect by the actual ion beam 2
This is performed in the same manner as in the above embodiment.

<Fifth Embodiment> A fifth embodiment according to the present invention will be described with reference to FIG. In the fifth embodiment, the excitation light 8 emitted from the excitation light source 7 is irradiated onto the defect 22 of the phase shift mask 20 from multiple directions by the optical fiber 32b. Observation, inspection, processing, analysis, and the like of the sample 11 performed in actual defect correction by the ion beam 2 are performed in the same manner as in the above-described embodiment.

<Sixth Embodiment> A sixth embodiment according to the present invention will be described with reference to FIG. FIG. 6 shows that the sample 11 has the liquid crystal T
The final form in the case of the FT substrate 130 is shown. That is, the liquid crystal T
The FT substrate 130 includes an insulating transparent substrate 131 and a gate line 133 formed thereon with a thin insulating film 132 interposed therebetween.
And an insulating film 132 formed thereon, and the insulating film 13
2, a data line 134 and a source line 135 formed on
It comprises a transistor provided at a point where the data line 134 and the gate line 133 intersect, and a transparent dot electrode 136 driven by the transistor. Therefore,
Liquid crystal TF with small size per pixel such as projector
When a disconnection defect 140 occurs in a part of the T data line or the gate line 133, a line defect occurs in the TFT substrate 130, and it is necessary to correct the disconnection defect 140. By the way, in this embodiment, the gate line 133 is used.
Alternatively, a case will be described in which inspection and correction of the disconnection defect 140 generated in the data line 134 are performed in a state where the gate line 133 or the data line 134 is exposed. Even when the inspection and correction of the disconnection defect 140 are performed in a state where the gate line 133 or the data line 134 is exposed, an insulating transparent substrate 131 such as glass is provided below the gate line 133.
A thin insulating film 132 such as silicon oxide, silicon nitride, or sapphire is formed thereon, and an insulating film 132 such as silicon oxide, silicon nitride, or sapphire is formed below the data line 134. Therefore, electric charges are accumulated on the insulating film 132 by the irradiation with the ion beam 2 during the transport and similarly to the first to third embodiments.

Therefore, similarly to the first embodiment, the TFT substrate in the above state is inspected for a disconnection defect 140 by a defect inspection device (not shown) and mounted on the stage 14. Next, the CPU inspected and input by the defect inspection device
Based on the coordinate data of the defect position from
Numeral 7 moves the stage 14 to position a place where the defect 140 is considered to be located below the optical axis of the ion beam 2. Next, before and after observing the secondary charged particle image, FIG.
As shown in FIG. 12, the excitation light source 7 emits the excitation light 8 during a period in which the ion beam 2 is not irradiated,
A part of the emitted excitation light 8 is reflected by the reflecting mirror 9c attached to the probe 34 to change the irradiation direction, and the excitation light 8 is irradiated on the insulating film 62 which is an ion beam irradiation area. At this time, since the excitation light 8 is irradiated to the probe 34 which is grounded in advance, the insulating film 132 is grounded by directly contacting the probe 34 with the conductive insulating film 132. .

As described above, similarly to the first embodiment, the insulating film 132 is made conductive by the irradiation of the excitation light 8, and the charged electric charge is released, so that the two-dimensional secondary charged particles are discharged. It is possible to accurately observe the two-dimensional scanned ion image without noise components due to photoelectrons in the image (two-dimensional scanned ion image), and to accurately set the area of the disconnection defect 140. Only the irradiation area of the ion beam 2 set based on the two-dimensional scanning ion image is irradiated with the ion beam 2 in an atmosphere of an organic metal gas to deposit a conductive metal (Al, Cr, Mo, Ti, etc.) and disconnect the wire. The defect 140 is connected and corrected. Especially at this time, if the deposited conductive metal protrudes or protrudes,
This portion may be removed by irradiation with the ion beam 2. In this case, since the wiring is irradiated with the ion beam 2, if the excitation light 8 is irradiated, the excitation light 8 can escape from the probe 34 without being charged.

Here, the wavelength of the excitation light 8 for exciting electrons in the valence band (charger) in the insulator 132 to the conductor to make it conductive is a wavelength for exciting the insulating film 132. The wavelength of the excitation light 8 is 150 nm or less if the insulating film 132 is silicon oxide, and 3 if the insulating film 132 is silicon nitride.
It is desirable that the thickness be 00 nm or less, and 200 nm or less for sapphire. Further, instead of adding the reflecting mirror 9c to the probe 34, for example, aluminum is used as the material of the probe 34 so that the probe 34 itself has a reflection characteristic. Alternatively, if the charged beam irradiation device is equipped with a gas nozzle, the probe may be grounded and reflected using a gas nozzle instead of a probe.

<Seventh Embodiment> A seventh embodiment according to the present invention will be described with reference to FIG. The seventh embodiment is a method of irradiating the excitation light 8 in a strip shape to ground the insulator. FIG.
In the above, a part of the excitation light 8 emitted from the excitation light source 7 is refracted by a prism 25 made of MgF ₂ , LiF or the like and branched, and the branched excitation light 8 is divided into MgF ₂ and LiF.
The irradiation area is enlarged in a uniaxial direction by a plano-convex cylindrical lens 40 and a plano-concave cylindrical lens 41 formed as shown in FIG. On the other hand, the excitation light 8 emitted from the excitation light source 7
Is reflected by the reflecting mirror 9d to form a large spot-like shape 36.
Irradiation. For example, the phase shift mask 20
In (11), when observing, inspecting, processing, or analyzing a portion close to the outside, the holder 1 with the excitation light 8 grounded is used.
Although the ground can be achieved by irradiating the second or clamp 13, it is difficult to ground the isolated pattern at the center since it is not connected to the periphery. Therefore, the excitation light 8 is applied to the band 3 by using two cylindrical lenses 40 and 41.
By irradiating 5, grounding becomes possible. Other configurations of the seventh embodiment are the same as those of the above-described embodiment.

First, a part of the light 8 for exciting electrons in the insulator is branched to the prism 25 and the other part to the reflecting mirror 9. Light 8 that excites electrons in the insulator reflected by the reflecting mirror 9 irradiates a charged beam irradiation area such as the ion beam 2. The light incident on the prism 25 changes its direction by refraction, and the plano-convex cylindrical lens 40 and the plano-concave cylindrical lens 4
By (1), the irradiation area is enlarged in a uniaxial direction in which grounding is possible (FIG. 7B). The band-shaped light enlarged by the two cylindrical lenses intermittently irradiates the charged beam irradiation region with light 8 for exciting electrons in the insulator from a direction different from the light incident from the reflecting mirror 9. Insulating transparent substrate 11
The upper insulator is made conductive by the light 8 in the same manner as in the above embodiment, so that the charge of the charged beam such as the ion beam 2 to be irradiated escapes to the ground without being accumulated in the insulator. . After grounding, the focused charged beam 2 is irradiated while scanning, secondary electrons or secondary ions emitted from the substrate and the sample are detected by a secondary particle detector, and processing such as observation or inspection or processing is performed. I do. Further, the lenses 40 and 41 for deforming the light flux shape of the excitation light 8 may be configured to be drivable so that the conductive film 20b can be selectively grounded. Here, an example in which the irradiation area is enlarged in one axis direction has been described, but the irradiation area can be arbitrarily changed, for example, the irradiation area is radially enlarged in multiple axes directions.

<Eighth Embodiment> An eighth embodiment according to the present invention will be described with reference to FIG. In the eighth embodiment, a part of the excitation light 8 is scanned by a polygonal reflecting mirror or a galvano mirror 42 to ground the insulator. According to the eighth embodiment, similarly to the seventh embodiment, it is possible to ground the region covered with the insulating film in the vicinity of the central portion on the sample 11. First, the excitation light 8 emitted from the excitation light source 7
Is branched to a polygonal reflecting mirror 42, and the other is branched to a reflecting mirror 9e. The light passes through the excitation light transmitting material 27 that transmits the excitation light 8 reflected by the reflection mirror 9e, is reflected again by the reflection mirror 9f, and is irradiated to the charged beam irradiation area. Polygonal reflecting mirror 42
The excitation light 8 reflected by the light source irradiates a region irradiated with a charged beam such as an ion beam from a different incident direction from the excitation light reflected by the reflecting mirror 9e. Further, the polygonal reflecting mirror 42 scans the reflection area from the charged beam irradiation area to the groundable area by rotation, and releases the electric charge. Other configurations of the eighth embodiment are the same as those of the above-described embodiment.

According to the eighth embodiment, if the excitation light 8 is scanned over the entire area of the sample 11, an effect of cleaning the surface of the sample 11 can be expected. Further, if the excitation light 8 is constantly irradiated to the region including the observation, inspection and analysis regions by the reflecting mirrors 9e and 9f, the secondary charged particles emitted from the sample by the irradiation of the charged beam 2 are excited and amplified,
It can also be expected to improve detection efficiency.

<Ninth Embodiment> A ninth embodiment according to the present invention will be described with reference to FIG. The ninth embodiment is a method of irradiating the excitation light 8 in a pulsed manner by rotating the light-shielding disk 43 provided with the light extraction hole 44 in the excitation light optical path in the excitation light path in the first embodiment. It is. According to this method, when the light extraction hole 44 coincides with the optical axis, irradiation becomes possible, and other portions can be shielded from light. The irradiation time is determined by the size of the light extraction hole 44 of the light-shielding disk 43, and the minimum time required to make the insulator conductive can be set. As described above, the irradiation of the charged particle beam such as the ion beam 2 is performed by the control device 6 based on the instruction from the CPU 62.
Since the control is performed based on the control of the blanking electrode 1 by controlling the light-shielding disk 43 based on a command from the CPU 62, the excitation light 8 is irradiated onto the sample during the period in which the charged particle beam is not irradiated. can do. That is, similarly to the above-described embodiment, during a period in which the charged particle beam is not irradiated, the excitation light 8 is irradiated, and then the charged particle beam is irradiated, and observation, processing and correction are performed as needed.

In order to generate a pulse, the source of the excitation light source may be controlled by a clock. In particular, when performing processing such as observation, inspection, processing, or analysis, irradiation of the excitation light 8 does not necessarily mean that the sample 11 is not altered or processed. In particular, when a gas is used together with the charged beam, the gas may react to the excitation light 8 and accelerate processing. Therefore, by irradiating the excitation light 8 in a pulsed manner, it is possible to make the insulator conductive and to prevent damage to the sample 11 as much as possible.

<Tenth Embodiment> A tenth embodiment according to the present invention will be described with reference to FIG. That is, in FIG. 13, the electron source 10
1 and an electron beam 102 extracted from an electron source 101
And an electron beam optical system including a lens 103 for focusing the electron beam 102, a deflecting electrode 104 for deflecting the electron beam 102, and a blanking electrode for controlling ON and OFF of the electron beam. There is. These components 101, 103, 104, etc. are controlled by a power supply and a control device 161 (not shown). Further, an exhaust pipe 117 is provided in the electron beam chamber 116.
And is evacuated by a vacuum evacuation device. Inside the process chamber 115, a holder 12 for mounting the semiconductor wafer 49 and a clamp 13 for fixing the semiconductor wafer 49
And a stage 14 for moving the semiconductor wafer 49 to an arbitrary position, and for detecting charged particles (including secondary electrons, reflected electrons, and transmitted electrons) emitted from the semiconductor wafer 49 by irradiation of the electron beam 2. Charged particle detector 48
And an excitation light source 7 attached to the process chamber 15 to irradiate excitation light 8 for exciting electrons of an insulator contained in the sample 11 of the semiconductor wafer 49. The excitation light 8 emitted from the excitation light source 7 irradiates a region including a grounded conductor in the semiconductor wafer 49.
Further, the process chamber 115 is evacuated to a vacuum by a vacuum device (not shown) via an exhaust pipe 117.

The preparatory chamber 119 is connected to the process chamber 115 via a gate valve 118, so that the holder 12 can be introduced onto the stage 14 by a transfer system (not shown). The CPU 162 stores a monitor 163 for observation, input means 164 such as a keyboard and a mouse, and data such as an inspection result obtained from the image processing circuit 121 and an analysis result obtained from an analysis circuit (not shown). The apparatus 165 is connected to an input unit 166 composed of a recording medium or a network for inputting design information of a semiconductor wafer, rough position information of a defect required for processing, and the like. The control device 161 controls the C
The electron beam optical system is controlled based on a command from the PU 162, and this control information is transmitted to the CPU 162. The control device 67 also controls the stage 14 based on a command from the CPU 162, and transmits position control information of the stage 14 to the CPU 162. Image memory 12
0 indicates a charged particle image such as a secondary electron, a reflected electron, or a transmitted electron detected by the charged particle detector 48 based on the traveling information of the stage 14 obtained from the CPU 162, scanning of the electron beam, blanking information, and the like. It is something to memorize. The image processing circuit 121 is a circuit that inspects a wiring pattern for defects such as defects, foreign matter, and scratches based on the charged particle images stored in the image memory 120.

Next, a description will be given of a method of observing, inspecting, processing, and analyzing the sample 11 made of the semiconductor wafer 49 containing an insulator by using the electron beam 102 using the apparatus of this embodiment. That is, for example, when the electron beam 102 is used to detect and inspect a defect in a wiring pattern on the semiconductor wafer 49, a defect on an insulating film, a pinhole, or the like, the control device 67 based on a command from the CPU 162. Controls the stage 14 to move a desired portion where a defect is to be detected below the optical axis of the electron beam 2. First, since there is a possibility that the semiconductor wafer 49 mounted on the semiconductor wafer 49 may be charged by transport before loading, the semiconductor wafer 49 is irradiated with the excitation light 8 from the excitation light source 7 for a predetermined period (a period indicated by 90 in FIG. 10). The electrons in the valence band in the interlayer insulating film such as SiO ₂ on the semiconductor wafer 49 are excited to the conduction band to become conductive, and the accumulated charge is released to the ground.

Next, based on a command from the CPU 162,
The control device 161 controls the ON / OFF of the blanking electrode and the deflection electrode 104, and scans the focused region of the electron beam 102 in the X direction as shown in FIG. The controller 67 controls the stage 14 based on the command from the controller and causes the stage 14 to travel in the Y direction. 2 showing patterns, defects, etc.
A charged particle image based on secondary electrons, reflected electrons, or the like is detected, and as a result, the detected charged particle image is stored in the image memory 120. That is, the charged particle detector 48 scans and irradiates the electron beam 102 onto the semiconductor wafer 49 in a state where the intensity of the excitation light 8 is weakened, the excitation light 8 is shielded, or the irradiation of the excitation light 8 is stopped.
, And then irradiating the excitation light 8 with the excitation light 8 for a predetermined time to eliminate the accumulated charges until the required charged particle image is obtained. If a defect exists in the area, a grayscale image based on charged particles corresponding to the defect can be detected.

When a charged particle image is detected in this manner, as shown in FIG. 10, there is provided a period (blanking period) 91 for activating the blanking electrode to turn off the irradiation of the electron beam 102. Using this period, the insulating film of the semiconductor wafer 49 is made conductive by scanning and irradiating the excitation light 8 to the region including the grounded conductor,
The charge charged on the insulating film of the semiconductor wafer 49 by the irradiation of the electron beam 102 can be released. As a result, the amount of displacement of the charged particle image due to the charged charges can be reduced to submicron or less, and a charged particle image that is accurate and free of noise components can be obtained without generating photoelectrons or the like. Next, the image processing circuit 121 can detect various defects such as a defect in the wiring pattern, a foreign matter, a scratch, and the like by comparing the charged particle image stored in the image memory 120 with the reference charged particle image. The result can be input to the CPU 162 and output from the CPU 162. Further, the CPU 162 stores the image memory 1
The charged particle image stored in the memory 20 can be read out and displayed on, for example, the monitor 163 or the like to observe the image.

In FIG. 10, the excitation light 8 is applied during all blanking periods.
The excitation light 8 may be illuminated during every second or third blanking period. In any case, the dose of the electron beam 102 until the excitation light 8 is irradiated (the irradiation time is also related) is such that the charge accumulation does not affect the desired observation or inspection. (Dose amount at which the shift amount of the observation image due to the accumulated charge is submicron or less). In addition, the excitation light 8 is observed, inspected,
The irradiation of the electron beam 2 may be stopped during the irradiation of the region including the processing and analysis regions, or the electron beam 2 may be deflected to a place other than the processing region for the observation, inspection, processing, or analysis. Further, as shown in FIG. 12, the change in the intensity of the excitation light 8 may be performed in synchronization with the detection of charged particles based on the deflection irradiation of the electron beam 2 to a processing area such as inspection, processing, or analysis. .

Further, by installing an analyzer (not shown) in the sample chamber 115, an electron energy analysis or the like or an analysis of X-rays or the like can be performed. Further, it is also possible to perform processing by setting a processing area by the electron beam 102 based on the detected charged particle image, and irradiating the set processing area with the electron beam 102. In any case, since the insulating film (protective film) formed on the semiconductor wafer 49 is silicon oxide, silicon nitride, or sapphire, the excitation light 8 penetrates silicon oxide, silicon nitride, or sapphire and damages the lower layer. In order not to affect the wavelength, the wavelength of the excitation light 8 is 150 nm or less for silicon oxide, 300 nm or less for silicon nitride
In the case of sapphire, the thickness is desirably 200 nm or less. Therefore, the excitation light source 7 described in the first embodiment can be used.

<Eleventh Embodiment> An eleventh embodiment according to the present invention will be described with reference to FIG. The eleventh embodiment is a method in which the excitation light 8 is obliquely incident using a polygonal reflecting mirror or a galvanomirror 42 that can move, such as rotate, and is grounded. In this method, the excitation light 8 emitted from the excitation light source 7 is incident on a polygonal reflecting mirror or a galvanometer mirror 42, and the excitation light 8 reflected by the mirror 42 is charged through the excitation light transmissive substance 27 into an electron beam 102 or the like. The beam is irradiated to the beam irradiation area. The mirror 42 scans the reflection area from the charged beam irradiation area to the groundable area by a movement such as rotation, and releases the electric charge. By the way, while the excitation light 8 passes through the region including the observation or inspection or analysis region, the charged beam 102 (2) is moved to a region different from the region including the observation or inspection or analysis region and the excitation light 8 Is emitted from the sample 11 by passing through the region including the observation or inspection or processing or analysis region, and then irradiating the focused charged beam 102 (2) while scanning within the region including the observation or inspection or analysis region. Charged particles are detected by a charged particle detector 48.
By performing the detection and observation or inspection or analysis by (5, 6), the influence of photoelectrons affecting the observation or inspection or analysis can be avoided, and the charged beam 102
Charging due to the irradiation of (2) can be prevented.

<Twelfth Embodiment> A twelfth embodiment according to the present invention will be described with reference to FIG. The twelfth embodiment is a method of irradiating the excitation light 8 simultaneously with the charged beam 102 (2) to form a desired image. In FIG. 15, Tcs is a time during which the charged beam 102 (2) is not irradiated to the observation, inspection, processing, or analysis area, Te is a time during which the excitation light 8 is irradiated, and Tci is a time during which the charged beam 102 (2) is irradiated.
This is the time required to form a desired observation image by the scanning irradiation of (2). By the charged beam 102 (2)
When a sample (substrate) 11 including an insulator is observed, inspected, analyzed, or the like, the excitation light 8 is supplied as in the above embodiment.
Irradiate to the area including the grounded conductor. The irradiation time Te of the excitation light 8 at this time is set to, for example, about one-third of the time (observation image formation time) Tci required for the charged beam to perform desired observation, inspection, or analysis. At the same time as the irradiation of the charged beam to the region including the observation or inspection or analysis region.

First, the irradiation of the excitation light 8 is started at the same time that the charged beam 102 (2) is irradiated to the observation or inspection or analysis area, and the charged particle detector 48 detects the charged particle image to obtain the charged particle image. It is stored in the image memory 120 (charged particle image 1). Next, the same region is irradiated with the charged beam 102 (2) again, and the irradiation of the excitation light 8 is started at the time when about one third of the time required to form a charged particle image is completed. The charged particle image is detected by the charged particle detector 48 in the same manner as described above, and is stored in the image memory 120 (charged particle image 2). Similarly, the charged beam 102
Irradiation of (2) is started, and irradiation of the excitation light 8 is started when about two-thirds of the time required to form a charged particle image is completed, and the charged particle image is stored in the image memory 120 ( Charged particle image 3). The charged particle images 1 to 3 stored in the image memory 120 in this manner are transferred to the image processing circuit 121.
In the above, a charged particle image obtained from a period during which the excitation light 8 is not irradiated can be obtained, and the effect of photoelectrons affecting observation, inspection, or analysis can be avoided. Can also be prevented.

<Thirteenth Embodiment> A thirteenth embodiment according to the present invention will be described with reference to FIG. In the figure, Tci is a charged particle detector 48 that detects charged particles generated when the charged beam 102 (2) is irradiated on an observation, inspection, or analysis area.
This is the time for detection at (5, 6). Charged beam 10
When observing, inspecting, processing, and analyzing the sample 11 containing an insulator according to 2 (2), the excitation light 8
To the area including the conductor that is grounded. It is assumed that the irradiation intensity of the excitation light 8 at this time is changed in a wave-like manner. That is, the intensity of the excitation light 8 is changed in a wave-like manner as shown in FIG. Charged beam 102 (2)
Is applied to the observation or inspection or analysis area in the same manner as when observing or inspecting or analyzing a normal conductive substance. As described above, the charged particles generated by irradiating the charged beam are detected by the charged particle detector 48 (5, 6). The detection timing is synchronized with the change of the excitation light 8 so that the intensity of the excitation light is reduced. Perform when weakened. By repeating this method, a desired charged particle image can be obtained. As a result, it is possible to avoid the influence of photoelectrons affecting observation, inspection, or analysis, and also to prevent charging of charges due to irradiation of a charged beam.

The charged beam devices described in the first to thirteenth embodiments include a focused ion beam device, a scanning electron microscope, an Auger electron spectrometer, and an IMA (Ion Mi).
Crop probe Analyzer), SIMS
(Secondary Ion Mass Spect
observation, inspection, processing,
At least one of the analyzes can be performed.

[0064]

According to the present invention, an accurate and high-contrast charged particle image which does not include a noise component due to irradiation of excitation light and has no displacement due to a charged electric charge can be obtained.
Observation, inspection, processing or analysis of defects including fine patterns and fine foreign substances on the sample so that they can be detected from a sample containing an insulator or having an insulator in an upper layer or a lower layer. It has the effect of being able to. Further, according to the present invention, damage to a lower layer of an insulating film made of SiO ₂ , SiN or the like due to irradiation of excitation light with respect to a sample such as a semiconductor substrate is minimized, and there is no noise component, and it is accurate and High-contrast charged particle images can be detected from a sample containing an insulator or a sample having an insulator in the upper or lower layer, and observation, inspection, or processing of defects such as fine patterns or fine foreign substances on the sample. Alternatively, there is an effect that processing such as analysis can be performed.

Further, according to the present invention, based on an accurate and high-contrast charged particle image having no noise component,
This provides an effect that high-precision fine processing can be performed on a defect including a fine pattern or a fine foreign substance on a sample. Further, according to the present invention, a defect on the phase shift mask can be easily detected and corrected. Further, according to the present invention, even in a sample containing only an insulator, if a grounded probe or conductor is in the excitation light irradiation area and is in contact with the substrate and the sample, observation or inspection or processing with a charged beam or processing or Processing such as analysis is also possible.

[Brief description of the drawings]

FIG. 1 is a diagram showing a configuration of a first embodiment of a processing apparatus for observation, inspection, processing, analysis, or the like using a charged particle beam according to the present invention. )
Is an enlarged view of FIG.

FIG. 2 is a schematic cross-sectional view showing a relationship between a sample, a light source, and a photomultiplier according to a second embodiment of the processing apparatus using a charged particle beam according to the present invention.

FIG. 3 is a schematic cross-sectional view of a sample and a front view around the sample, showing a third embodiment of a charged particle beam processing apparatus according to the present invention.

FIG. 4 is a schematic cross-sectional view of a sample and a front surface around the sample, showing a fourth embodiment of a charged particle beam processing apparatus according to the present invention.

FIG. 5 is a schematic cross-sectional view of a sample and its surroundings showing a fifth embodiment of a charged particle beam processing apparatus according to the present invention.

FIG. 6 is a schematic cross-sectional view of a sample and its surroundings showing a sixth embodiment of the charged particle beam processing apparatus according to the present invention.

7A and 7B are diagrams schematically showing a grounding method according to a seventh embodiment of the present invention, wherein FIG. 7A is a schematic cross-sectional view of a sample and a front surface around the sample, and FIG. It is.

FIG. 8 is a schematic cross-sectional view of a sample and a front view around the sample schematically showing a grounding method according to an eighth embodiment of the present invention.

FIG. 9 is a schematic cross-sectional view of a sample and a front view around the sample schematically showing a method of irradiating excitation light according to a ninth embodiment of the present invention.

FIG. 10 is a diagram schematically showing one embodiment of the relationship between the irradiation time (period) of the charged particle beam and the excitation light irradiation time (period) according to the present invention.

FIG. 11 is a view for explaining a state in which a charged particle image is detected by scanning and irradiating a charged particle beam on a desired region on a sample.

FIG. 12 is a diagram schematically illustrating an example of a relationship between a charged particle detection time (period) and an irradiation time (period) of excitation light of which intensity is changed according to the present invention.

FIG. 13 is a schematic front sectional view showing the configuration of a tenth embodiment of a processing apparatus using a charged particle beam according to the present invention.

FIG. 14 is a schematic cross-sectional view of a sample and a peripheral front view showing the configuration of a tenth embodiment of a charged particle beam processing apparatus according to the present invention.

FIG. 15 is a view schematically showing another embodiment of the relationship between the irradiation time (period) of the charged particle beam and the excitation light irradiation time (period) according to the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Ion source, 2 ... Ion beam, 3 ... Electrostatic lens, 4
... deflector (deflection electrode), 5 ... scintillator, 6 ... photomultiplier tube, 7 ... excitation light source, 8 ... excitation light, 9a, 9
b, 9c, 9d: reflecting mirror, 10: ion beam passage hole,
11 sample, 12 sample holder, 13 clamp, 14
... Stage, 15 ... Process chamber, 16 ... Charge beam chamber, 17 ... Exhaust pipe, 18 ... Gate valve, 19
... Preparatory chamber, 20 ... Phase shift mask, 20a ... Insulator (insulating transparent substrate) such as quartz, 20b ... Conductive thin film pattern (metal film pattern), 21 ... Phase shifter, 22 ... Defect part, 23 ... Scintillator power supply , 24 ... Power supply for reflector,
25 ... Prism, 26 ... Plasma generator, 27 ... Excitation light transmitting material, 28 ... Electrode, 29 ... Plasma chamber, 30 ...
Plasma, 31 ... High frequency power supply, 32a ... Kaleidoscope, 32b ... Optical fiber, 34 ... Probe,
40: plano-convex cylindrical lens, 41 plano-concave cylindrical lens, 42: polygonal reflecting mirror, 43: light-shielding disk,
44 ... light extraction hole, 48 ... charged particle detector, 49 ... semiconductor substrate (semiconductor wafer), 61 ... control device, 62 ... C
PU, 63 ... monitor, 64 ... input means such as a keyboard,
65 storage device, 66 input means such as recording medium or network, 67 control device, 70 shutter, 101 electron beam source, 102 electron beam, 103 electrostatic lens, 1
04: deflector (deflection electrode), 115: process chamber, 116: charged beam chamber, 117: exhaust pipe,
118: gate valve, 119: spare room, 120: image memory, 121: image processing circuit, 130: TFT substrate,
131: Transparent substrate, 132: Insulating film of SiO ₂ , SiN, etc., 133: Gate line, 134: Drain line, 135:
Source line, 136: transparent dot electrode, 140: disconnection defect, 161: control device, 162: CPU, 163: monitor, 164: input means such as a keyboard, 165 ... storage device, 166 ... input means such as a recording medium or network .

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (Reference) H01L 21/027 H01L 21/66 N 21/66 J 21/30 502W (72) Inventor Junzo Higashi Totsuka-ku, Yokohama-shi, Kanagawa 292 Yoshidacho Co., Ltd., Hitachi, Ltd.Production Technology Research Laboratory (72) Inventor Yuichi Hamamura 292 Yoshidacho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture, Ltd.Hitachi Manufacturing Technology Research Laboratory (72) Inventor Toshinobu Mizumura Yokohama, Kanagawa 292 Yoshida-cho, Totsuka-ku, Ichitoshi, Japan Hitachi, Ltd., Manufacturing Technology Laboratory (72) Inventor Hirohiro Koizumi 5--20-1, Josuihoncho, Kodaira-shi, Tokyo In-house Hitachi, Ltd. Semiconductor Group (72) Inventor Koike Hidemi 882 Ma, Hitachinaka-shi, Ibaraki Pref.Hitachi, Ltd.

Claims (28)

[Claims] 1. A detection step of detecting a charged particle generated from a sample by scanning and irradiating a charged particle beam onto a sample having an insulator to obtain a charged particle signal, and pulsing excitation light to the sample. A process for exciting electrons in an insulator by electrically irradiating the electrons to make them conductive to release electric charges. 2. A detection step of detecting charged particles generated from a sample by scanning and irradiating a charged particle beam to a sample having an insulator to obtain a charged particle signal, and pulsing excitation light to the sample. A step of exciting electrons in the insulator by conducting irradiation to make the electrons conductive to release electric charges, and detecting the charged particles in the detection process while pulsating the excitation light in the conduction process. A method for detecting charged particles, comprising irradiating a charged particle. 3. A detection step of scanning and irradiating a charged particle beam onto a sample having an insulator to detect charged particles generated from the sample to obtain a charged particle signal, and pulsing the sample with excitation light. A step of exciting electrons in the insulator by conducting irradiation to make the electrons conductive and release charges, and synchronizing the scanning of the charged particle beam in the detection process with the excitation light in the conductive process. A charged particle detection method characterized by irradiating in a pulsed manner. 4. A detection step of scanning and irradiating a charged particle beam on a sample having an insulator to detect charged particles generated from the sample to obtain a charged particle signal; A step of exciting the electrons in the insulator by conducting the irradiation by changing the intensity of the excitation light with time, and conducting the conduction to release the electric charge, and detecting the charged particles in the detection step. A method for detecting charged particles, wherein the method is performed in synchronization with a temporal change in the intensity of excitation light in a conduction process. 5. A detection step of scanning and irradiating a charged particle beam on a sample having an insulator to detect charged particles generated from the sample to obtain a charged particle signal; A step of exciting the electrons in the insulator by irradiating by changing the intensity of the excitation light with time to conduct and release the electric charge, and irradiating the charged particle beam in the detection step. A charged particle detection method, wherein the method is performed in synchronization with a temporal change in the intensity of the excitation light in the conduction process. 6. A detecting step of scanning and irradiating a charged particle beam on a sample having an insulator to detect charged particles generated from the sample to obtain a charged particle signal, and irradiating the sample with excitation light. A step of exciting the electrons in the insulator to conduct and excite the electrons to release the electric charge. A charged particle detection method, characterized in that the period is a period. 7. A detection step of scanning and irradiating a charged particle beam on a sample having an insulator to detect charged particles generated from the sample to obtain a charged particle signal, and irradiating the sample with excitation light. A conduction process of exciting electrons in the insulator to conduct and release electric charge by separating the charged particle beam irradiation period in the detection process and the excitation light irradiation period in the conduction process. A charged particle detection method, characterized in that the period is set to a short period. 8. A detecting step of scanning and irradiating a charged particle beam on a sample having an insulator to detect charged particles generated from the sample to obtain a charged particle signal, and irradiating the sample with excitation light. A process of exciting electrons in the insulator to make it conductive so as to release electric charges. A charged particle detection method, wherein the method is adjusted according to the amount of image shift. 9. The charged particle detection method according to claim 1, wherein the wavelength of the excitation light in the conduction process is one.
A charged particle detection method characterized by having a diameter of 50 nm or less. 10. The charged particle detection method according to claim 1, wherein at least one of observation, inspection, processing, and analysis is performed based on a charged particle signal obtained from the detection process. A processing method using a charged particle beam, comprising a processing step to be performed. 11. The charged particle detection method according to claim 1, further comprising the step of: applying a charged particle beam to a desired region on a sample set based on a charged particle signal obtained from the detection process. A processing method using a charged particle beam, comprising a processing step of performing processing by irradiation. 12. A stage on which a sample having an insulator is placed, a charged particle beam irradiation optical system that scans and irradiates the sample with a charged particle beam, and a charged particle beam is scanned by the charged particle beam irradiation optical system. A charged particle detector that detects charged particles generated from the sample by irradiation and obtains a charged particle signal, and a pulsed excitation light for exciting the electrons in the insulator to make the sample conductive with the sample. A charged particle detection device comprising: an excitation light irradiation optical system for irradiation. 13. A stage on which a sample having an insulator is placed, a charged particle beam irradiation optical system for scanning and irradiating the sample with a charged particle beam, and a charged particle beam scanning by the charged particle beam irradiation optical system. A charged particle detector that detects charged particles generated from the sample by irradiation and obtains a charged particle signal, and a pulsed excitation light for exciting the electrons in the insulator to make the sample conductive with the sample. Excitation light irradiation optical system to irradiate, while detecting charged particles by the charged particle detector,
Control means for irradiating the excitation light by the excitation light irradiation optical system in a pulsed manner. 14. A stage on which a sample having an insulator is placed, a charged particle beam irradiation optical system for scanning and irradiating the sample with a charged particle beam, and a charged particle beam is scanned by the charged particle beam irradiation optical system. A charged particle detector that detects charged particles generated from the sample by irradiation and obtains a charged particle signal, and a pulsed excitation light for exciting the electrons in the insulator to make the sample conductive with the sample. An excitation light irradiating optical system for irradiating, and control means for irradiating excitation light by the excitation light irradiating optical system in a pulsed manner in synchronization with scanning of the charged particle beam by the charged particle beam irradiating optical system. Charged particle detection device. 15. A stage on which a sample having an insulator is placed, a charged particle beam irradiation optical system for scanning and irradiating the sample with a charged particle beam, and a charged particle beam is scanned by the charged particle beam irradiation optical system. A charged particle detector for detecting charged particles generated from the sample by irradiating the sample to obtain a charged particle signal; and exciting light for exciting electrons in an insulator to make the sample conductive with the sample. An excitation light irradiating optical system that changes the intensity of light over time to irradiate, and detection of charged particles by the charged particle detector is synchronized with a temporal change of the intensity of the excitation light by the excitation light irradiating optical system. And a control unit for performing the control. 16. The apparatus according to claim 15, wherein said control means is configured to detect charged particles by said charged particle detector during a period in which the intensity of the excitation light by said excitation light irradiation optical system is weakened. A charged particle detection device according to the above. 17. A stage on which a sample having an insulator is placed, a charged particle beam irradiation optical system for scanning and irradiating the sample with a charged particle beam, and a charged particle beam is scanned by the charged particle beam irradiation optical system. A charged particle detector for detecting a charged particle generated from the sample by irradiating the sample to obtain a charged particle signal; and exciting light for exciting electrons in an insulator to make the sample conductive with the sample. An excitation light irradiating optical system for irradiating by changing the intensity of light with time; and irradiating the charged particle beam by the charged particle beam irradiating optical system to a temporal change of the intensity of the excitation light by the exciting light irradiating optical system. A charged particle detection device comprising: a control unit that performs synchronization. 18. The apparatus according to claim 18, wherein said control means is configured to perform irradiation of the charged particle beam by the charged particle beam irradiation optical system during a period in which the intensity of the excitation light by the excitation light irradiation optical system is weakened. The charged particle detection device according to claim 17. 19. A stage on which a sample having an insulator is placed, a charged particle beam irradiation optical system that scans and irradiates the sample with a charged particle beam, and a charged particle beam is scanned by the charged particle beam irradiation optical system. A charged particle detector that detects charged particles generated from a sample by irradiation to obtain a charged particle signal, and an excitation that irradiates the sample with excitation light for exciting electrons in an insulator to make the sample conductive. A light irradiation optical system, and a control unit that controls the detection period of the charged particles by the charged particle detector and the irradiation period of the excitation light by the excitation light irradiation optical system to be different periods. Charged particle detection device. 20. A stage on which a sample having an insulator is placed, a charged particle beam irradiation optical system for scanning and irradiating the sample with a charged particle beam, and a charged particle beam scanning by the charged particle beam irradiation optical system. A charged particle detector that detects charged particles generated from a sample by irradiation to obtain a charged particle signal, and an excitation that irradiates the sample with excitation light for exciting electrons in an insulator to make the sample conductive. A light irradiation optical system, and control means for controlling the irradiation period of the charged particle beam by the charged particle beam irradiation optical system and the irradiation period of the excitation light by the excitation light irradiation optical system to be different periods. A charged particle detection device, characterized in that: 21. A stage on which a sample having an insulator is placed, a charged particle beam irradiation optical system for scanning and irradiating the sample with a charged particle beam, and a charged particle beam scanning by the charged particle beam irradiation optical system. A charged particle detector that detects charged particles generated from a sample by irradiation to obtain a charged particle signal, and an excitation that irradiates the sample with excitation light for exciting electrons in an insulator to make the sample conductive. A light irradiation optical system, and control means for controlling a dose of the excitation light by the excitation light irradiation optical system in accordance with a charge amount on the sample or a displacement amount of a charged particle image caused by the charge amount. Charged particle detection device. 22. A stage on which a sample having an insulator is placed, a charged particle beam irradiation optical system for scanning and irradiating the sample with a charged particle beam, and a charged particle beam scanning by the charged particle beam irradiation optical system. A charged particle detector for detecting a charged particle generated from the sample by irradiating the sample to obtain a charged particle signal; A charged particle detection device comprising: an excitation light irradiation optical system that irradiates a beam from a substantially coaxial direction with a beam irradiation. 23. The charged particle detection device according to claim 12, wherein a wavelength of the excitation light emitted from the excitation light irradiation optical system is 150 nm or less. 24. An excitation light source of said excitation light irradiation means is constituted by an excimer lamp.
3. The charged particle detection device according to any one of 3. 25. The charging apparatus according to claim 12, wherein said excitation light irradiating means is configured to irradiate a desired area on the sample with the excitation light from a plurality of directions. Particle detector. 26. The charged particle detection apparatus according to claim 12, wherein said excitation light irradiating means is configured to scan and irradiate the sample with excitation light. 27. The charged particle detection device according to claim 12, further comprising at least one of observation, inspection, processing, and analysis based on a charged particle signal obtained from the charged particle detector. A processing apparatus using a charged particle beam, comprising: a processing unit that performs two processes. 28. The charged particle detector according to claim 12, further comprising controlling the charged particle beam irradiation optical system based on a charged particle signal obtained from the charged particle detector. A processing apparatus using a charged particle beam, comprising: a control unit for irradiating a charged particle beam onto a desired region on a sample to perform processing.