JP2000031503A - センサ構造および分離構造の相互接続方法 - Google Patents

センサ構造および分離構造の相互接続方法

Info

Publication number
JP2000031503A
JP2000031503A JP17621799A JP17621799A JP2000031503A JP 2000031503 A JP2000031503 A JP 2000031503A JP 17621799 A JP17621799 A JP 17621799A JP 17621799 A JP17621799 A JP 17621799A JP 2000031503 A JP2000031503 A JP 2000031503A
Authority
JP
Japan
Prior art keywords
conductive
substrate
open trench
trench
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17621799A
Other languages
English (en)
Japanese (ja)
Inventor
Z Lisa Zhang
ゼット・リサ・ハン
Guang X Li
グアン・エックス・リ
Paul L Bergstrom
ポール・エル・バーグストローム
Juergen A Foerstner
ジャーガン・エー・フォーストナー
Muh-Ling Ger
ム−リン・ガー
John E Schmiesing
ジョン・イー・シュミッシング
Jr Frank A Shemansky
フランク・エー・シェマンスカイ,ジュニア
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of JP2000031503A publication Critical patent/JP2000031503A/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802Details
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0814Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Pressure Sensors (AREA)
JP17621799A 1998-06-26 1999-06-23 センサ構造および分離構造の相互接続方法 Pending JP2000031503A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US105943 1979-12-20
US10594398A 1998-06-26 1998-06-26

Publications (1)

Publication Number Publication Date
JP2000031503A true JP2000031503A (ja) 2000-01-28

Family

ID=22308652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17621799A Pending JP2000031503A (ja) 1998-06-26 1999-06-23 センサ構造および分離構造の相互接続方法

Country Status (3)

Country Link
JP (1) JP2000031503A (no)
DE (1) DE19928291A1 (no)
NO (1) NO992688L (no)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013503341A (ja) * 2009-08-26 2013-01-31 フリースケール セミコンダクター インコーポレイテッド 応力分離部を有するmemsデバイスおよび製造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10029012C2 (de) 2000-06-13 2002-06-06 Amtec Gmbh Mikrostruktur und Verfahren zu deren Herstellung
FR2880128B1 (fr) * 2004-12-29 2007-02-02 Commissariat Energie Atomique Accelerometre micro-usine a peignes capacitifs
DE102005052087A1 (de) * 2005-10-28 2007-05-03 Kmw Kaufbeurer Mikrosysteme Wiedemann Gmbh Sensor
DE102010043980A1 (de) * 2010-11-16 2011-09-01 Robert Bosch Gmbh Sensor und Verfahren zur Herstellung eines Sensors
US11757378B1 (en) * 2022-06-06 2023-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Micromechanical arm array in micro-electromechanical system (MEMS) actuators

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013503341A (ja) * 2009-08-26 2013-01-31 フリースケール セミコンダクター インコーポレイテッド 応力分離部を有するmemsデバイスおよび製造方法

Also Published As

Publication number Publication date
NO992688D0 (no) 1999-06-03
DE19928291A1 (de) 1999-12-30
NO992688L (no) 1999-12-27

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