JP2000031280A5 - - Google Patents

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Publication number
JP2000031280A5
JP2000031280A5 JP1999171020A JP17102099A JP2000031280A5 JP 2000031280 A5 JP2000031280 A5 JP 2000031280A5 JP 1999171020 A JP1999171020 A JP 1999171020A JP 17102099 A JP17102099 A JP 17102099A JP 2000031280 A5 JP2000031280 A5 JP 2000031280A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP1999171020A
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Japanese (ja)
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JP2000031280A (ja
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Publication date
Priority claimed from US09/099,093 external-priority patent/US6137178A/en
Application filed filed Critical
Publication of JP2000031280A publication Critical patent/JP2000031280A/ja
Publication of JP2000031280A5 publication Critical patent/JP2000031280A5/ja
Withdrawn legal-status Critical Current

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JP11171020A 1998-06-17 1999-06-17 集積回路のためのメタライゼ―ション装置 Withdrawn JP2000031280A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/099093 1998-06-17
US09/099,093 US6137178A (en) 1998-06-17 1998-06-17 Semiconductor metalization system and method

Publications (2)

Publication Number Publication Date
JP2000031280A JP2000031280A (ja) 2000-01-28
JP2000031280A5 true JP2000031280A5 (US07585860-20090908-C00083.png) 2006-06-01

Family

ID=22272661

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11171020A Withdrawn JP2000031280A (ja) 1998-06-17 1999-06-17 集積回路のためのメタライゼ―ション装置

Country Status (7)

Country Link
US (1) US6137178A (US07585860-20090908-C00083.png)
EP (1) EP0966035B1 (US07585860-20090908-C00083.png)
JP (1) JP2000031280A (US07585860-20090908-C00083.png)
KR (1) KR100598256B1 (US07585860-20090908-C00083.png)
CN (1) CN1139112C (US07585860-20090908-C00083.png)
DE (1) DE69930027T2 (US07585860-20090908-C00083.png)
TW (1) TW417204B (US07585860-20090908-C00083.png)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2786609B1 (fr) * 1998-11-26 2003-10-17 St Microelectronics Sa Circuit integre a capacite interlignes reduite et procede de fabrication associe
US6849923B2 (en) 1999-03-12 2005-02-01 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method of the same
US20060017162A1 (en) * 1999-03-12 2006-01-26 Shoji Seta Semiconductor device and manufacturing method of the same
US6420252B1 (en) * 2000-05-10 2002-07-16 Emcore Corporation Methods of forming robust metal contacts on compound semiconductors
US7892962B2 (en) * 2007-09-05 2011-02-22 Taiwan Semiconductor Manufacturing Company, Ltd. Nail-shaped pillar for wafer-level chip-scale packaging
KR101654820B1 (ko) 2008-07-09 2016-09-06 인벤사스 코포레이션 감소된 도전체 공간을 가진 마이크로전자 상호접속 소자, 및 그것을 형성하는 방법
TWI390756B (zh) 2008-07-16 2013-03-21 Applied Materials Inc 使用摻質層遮罩之混合異接面太陽能電池製造
WO2010068331A1 (en) 2008-12-10 2010-06-17 Applied Materials, Inc. Enhanced vision system for screen printing pattern alignment
US9064968B2 (en) * 2013-08-19 2015-06-23 Phison Electronics Corp. Non-volatile memory device and operation and fabricating methods thereof
US8772951B1 (en) 2013-08-29 2014-07-08 Qualcomm Incorporated Ultra fine pitch and spacing interconnects for substrate
US9159670B2 (en) 2013-08-29 2015-10-13 Qualcomm Incorporated Ultra fine pitch and spacing interconnects for substrate
KR102377372B1 (ko) * 2014-04-02 2022-03-21 어플라이드 머티어리얼스, 인코포레이티드 인터커넥트들을 형성하기 위한 방법
US20190067178A1 (en) * 2017-08-30 2019-02-28 Qualcomm Incorporated Fine pitch and spacing interconnects with reserve interconnect portion

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3057975B2 (ja) * 1993-09-27 2000-07-04 日本電気株式会社 集積回路の配線
US5471093A (en) * 1994-10-28 1995-11-28 Advanced Micro Devices, Inc. Pseudo-low dielectric constant technology
JPH08293523A (ja) * 1995-02-21 1996-11-05 Seiko Epson Corp 半導体装置およびその製造方法
US5702982A (en) * 1996-03-28 1997-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Method for making metal contacts and interconnections concurrently on semiconductor integrated circuits
US5846876A (en) * 1996-06-05 1998-12-08 Advanced Micro Devices, Inc. Integrated circuit which uses a damascene process for producing staggered interconnect lines
US5753976A (en) * 1996-06-14 1998-05-19 Minnesota Mining And Manufacturing Company Multi-layer circuit having a via matrix interlayer connection
KR100219508B1 (ko) * 1996-12-30 1999-09-01 윤종용 반도체장치의 금속배선층 형성방법

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