JP2000022063A - Electronic component and manufacture thereof - Google Patents

Electronic component and manufacture thereof

Info

Publication number
JP2000022063A
JP2000022063A JP19003298A JP19003298A JP2000022063A JP 2000022063 A JP2000022063 A JP 2000022063A JP 19003298 A JP19003298 A JP 19003298A JP 19003298 A JP19003298 A JP 19003298A JP 2000022063 A JP2000022063 A JP 2000022063A
Authority
JP
Japan
Prior art keywords
electronic component
rosin
electrode terminal
coating
external electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19003298A
Other languages
Japanese (ja)
Inventor
Masami Yokozawa
眞覩 横沢
Hiroyuki Amano
比呂之 天野
Kazuhiro Aoi
和廣 青井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP19003298A priority Critical patent/JP2000022063A/en
Publication of JP2000022063A publication Critical patent/JP2000022063A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

PROBLEM TO BE SOLVED: To provide an electronic component which is free from Pb, hardly oxidized, and excellent in solderability by a method wherein a rosin-containing resin film is formed on the metal film of the electrode terminals of the electronic component. SOLUTION: A rosin-containing resin film 7 is formed on the metal film 6 of the electrode terminals 4 of an electronic component. The resin film 7 is formed through a method where an electronic component is dipped into a solution which is composed of alcohol such as methanol, ethanol, or isopropyl alcohol and rosin dissolved in it or the vapor of solution is made to blow against the electronic component, and then the electronic component is thermally treated at a temperature at which alcohol is evaporated.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は電子部品の電極端子
に関し、特に電極端子の金属被膜上の防錆と半田付け性
を改善した電子部品とその製造方法に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrode terminal of an electronic component, and more particularly to an electronic component with improved rust prevention and solderability on a metal film of the electrode terminal, and a method of manufacturing the same.

【0002】[0002]

【従来の技術】従来の電子部品の電極端子は、例えば、
表面技術48巻、頁1000(1997)に掲載されて
いるように、電極端子上にPbとSnの合金、いわゆる
半田被膜を電気メッキやディップ法で形成し、電子機器
への半田付けを容易にしていた。最近では鉛の有毒性か
らPbを含まない半田の検討(日経エレクトロニクス、
No.635、頁92、1995)も急がれ、例えば、
電極端子上の半田を不要とするPdメッキを施したPP
F技術(第1回表面物性研究会テキスト、頁1、表面技
術協会関西支部、1996)も開発されている。
2. Description of the Related Art Conventionally, electrode terminals of electronic parts are, for example,
As described in Surface Technology Vol. 48, page 1000 (1997), an alloy of Pb and Sn, a so-called solder film, is formed on electrode terminals by electroplating or dipping to facilitate soldering to electronic equipment. I was Recently, due to the toxicity of lead, the study of Pb-free solder (Nikkei Electronics,
No. 635, p. 92, 1995).
Pd-plated PP that eliminates the need for solder on electrode terminals
F-Technology (1st Surface Properties Study Group Textbook, Page 1, Surface Technology Association Kansai Branch, 1996) has also been developed.

【0003】また、金属封止型半導体装置の電極にポリ
エチレンオキシド膜を被覆したり(特開昭55−115
350号)、半田付け温度で分解、昇華する酸化防止膜
を電極端子に被覆する方法も知られている(特開昭56
−98849号)。
Further, an electrode of a metal-sealed semiconductor device is coated with a polyethylene oxide film (Japanese Patent Laid-Open No. 55-115).
No. 350), a method of coating an electrode terminal with an antioxidant film which decomposes and sublimates at the soldering temperature is also known (Japanese Patent Application Laid-Open No. 56-56).
-98849).

【0004】[0004]

【発明が解決しようとする課題】しかしながら、電極端
子上に形成した被膜は、電子部品として実装されるまで
に、Pdでも電子部品の製造工程で酸化され半田付け性
を悪くする。
However, the coating formed on the electrode terminals is oxidized in the manufacturing process of the electronic component even for Pd before mounting as the electronic component, and the solderability is deteriorated.

【0005】今後、電極端子の被膜がPbを含まない半
田へ移行するのは必至であり、その被膜はPb/Snよ
りも酸化されやすいため、半田付け性は困難であること
が予測される。
[0005] In the future, it is inevitable that the coating of the electrode terminal will shift to solder containing no Pb, and since the coating is more easily oxidized than Pb / Sn, it is expected that solderability will be difficult.

【0006】本発明は上記従来の課題を解決するもので
あり、電子部品の電極端子の金属被膜上に、Pbを含ま
ず酸化されにくく半田付け性の良い電子部品とその製造
方法を提供することを目的とする。
An object of the present invention is to solve the above-mentioned conventional problems, and to provide an electronic component which does not contain Pb and which is not easily oxidized and has good solderability on a metal film of an electrode terminal of the electronic component, and a method of manufacturing the same. With the goal.

【0007】[0007]

【課題を解決するための手段】この目的を達成するため
に、本発明は電極端子上に形成した金属被膜上に被膜の
酸化を遅らせる為の被膜を形成しようとするものであ
る。すなわち、電子部品の電極端子上に金属被膜を形成
後、その金属被膜上にもう一つの被膜を形成し、この被
膜によって金属被膜の酸化を防止させるものである。金
属被膜上に形成する被膜は酸化防止の目的の他に半田付
け時のフラックス効果を持つ被膜が最適であることは言
うまでもなく、古くから半田付けのフラックスとして使
用されている松ヤニやロジンが有力である。
SUMMARY OF THE INVENTION In order to achieve this object, the present invention is to form a film on a metal film formed on an electrode terminal for delaying oxidation of the film. That is, after forming a metal film on the electrode terminal of the electronic component, another film is formed on the metal film, and the film prevents oxidation of the metal film. It is needless to say that the coating to be formed on the metal coating is not only for the purpose of preventing oxidation, but also has a flux effect at the time of soldering. It is.

【0008】電極端子の金属被膜の酸化を防止するため
の金属被膜上にロジンを含む被膜の形成は、例えばロジ
ンをメタノール、エタノール、イソプロピルアルコール
等の脂肪族低級アルコールに溶解させ、その溶液に浸漬
したり溶液の蒸気を吹きつけた後、アルコールが蒸発す
る温度で熱処理することで達成できる。
The formation of a film containing rosin on the metal film for preventing the metal film of the electrode terminal from being oxidized is performed, for example, by dissolving rosin in an aliphatic lower alcohol such as methanol, ethanol or isopropyl alcohol, and immersing the resin in the solution. This can be achieved by performing a heat treatment at a temperature at which the alcohol evaporates after spraying or spraying the vapor of the solution.

【0009】被膜塗布後の電極端子の加工や保存の状態
に依存するが、被膜の厚みは5nm〜50nmと推測さ
れる。被膜が薄いと酸化防止の効果がなく、厚いと電極
端子の加工によって金属被膜から剥離してしまうからで
ある。50nm以下の厚みであれば、金属被膜の表面の
凹凸によってロジン被膜は機械的に強固に接着し、接
触,摩擦また温度変化に対しても剥離しにくい。なお被
膜の厚み制御は、低級アルコールへの松ヤニやロジンの
溶解量を変えることで行える。例えば、本発明の10n
m程度の厚みを得ようとするならば、例えばロジン1g
を500ccのエタノールに溶解させた液に浸漬すれば
よい。
The thickness of the coating is estimated to be 5 nm to 50 nm, although it depends on the processing and storage conditions of the electrode terminals after coating. This is because if the coating is thin, there is no effect of preventing oxidation, and if the coating is thick, the electrode terminal is separated from the metal coating by processing. If the thickness is 50 nm or less, the rosin film is mechanically and firmly adhered due to the unevenness of the surface of the metal film, and is hardly peeled off even with contact, friction or temperature change. The thickness of the coating can be controlled by changing the amount of pine tar or rosin dissolved in lower alcohol. For example, 10n of the present invention
If you want to obtain a thickness of about m, for example, 1 g of rosin
May be immersed in a solution in which is dissolved in 500 cc of ethanol.

【0010】この構成により、電子部品の電極端子の金
属被膜上に、Pbを含まず酸化されにくく半田付け性の
良い電極端子をもつ電子部品が得られる。
According to this structure, an electronic component having an electrode terminal which does not contain Pb and is not easily oxidized and has good solderability is obtained on the metal film of the electrode terminal of the electronic component.

【0011】[0011]

【発明の実施の形態】本発明は、松ヤニやロジンまたこ
れらの主成分であるアビエチン酸塩で代表される薄い被
膜を電極の金属被膜上に形成することで金属被膜の酸化
を防止すると同時に、実装の際のフラックスとして利用
するところに特徴がある。
BEST MODE FOR CARRYING OUT THE INVENTION The present invention prevents oxidation of a metal film by forming a thin film typified by pine tar, rosin or abietic acid salt which is a main component thereof on the metal film of an electrode. The feature is that it is used as a flux at the time of mounting.

【0012】以下本発明の実施の形態について、図面を
参照しながら説明する。図1は本発明における樹脂封止
型半導体装置を例にした本発明の実施の形態を示したも
のである。すなわち、Cu材料に厚み3μmのニッケル
メッキしたリードフレーム1上に半導体チップ2を接着
し、ついで金属細線3でチップ2と外部電極4とつなが
る領域とを結線する。しかるのち、成型用樹脂5で封
止、電極端子(リード)加工を施した後、電極端子にメ
ッキ法によって厚み10μmのBi/Sn(5/90重
量%)被膜6を得た。その後、ロジンの0.2重量%エ
タノール溶液中に外部電極端子を有する半導体装置全体
を10秒間ディップしてロジン被膜7を形成した後、1
00℃で約10分間乾燥した。
Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 shows an embodiment of the present invention using a resin-sealed semiconductor device according to the present invention as an example. That is, a semiconductor chip 2 is adhered on a lead frame 1 having a thickness of 3 μm and plated with nickel on a Cu material, and a thin metal wire 3 is used to connect the chip 2 to a region connected to an external electrode 4. Thereafter, after sealing with a molding resin 5 and electrode terminal (lead) processing, a 10 μm thick Bi / Sn (5/90% by weight) coating 6 was obtained on the electrode terminals by plating. Thereafter, the entire semiconductor device having external electrode terminals is dipped in a 0.2% by weight ethanol solution of rosin for 10 seconds to form a rosin coating 7,
Dry at 00 ° C for about 10 minutes.

【0013】ロジン被膜7は成型用樹脂表面を含む電子
部品全体を被覆するため、半導体樹脂上部表面にレーザ
等でマーキングを行うとコントラストの良い文字が形成
される。
Since the rosin coating 7 covers the entire electronic component including the surface of the molding resin, when marking is performed on the upper surface of the semiconductor resin with a laser or the like, characters with good contrast are formed.

【0014】ロジン被膜7は図2に示すように実装時に
半田付けされる実装面(リード下部)に最低被覆されて
おれば酸化防止効果のある無鉛半田実装ができる。又、
図3に示すようにリード部のみディップして被覆するこ
ともできる。
As shown in FIG. 2, if the rosin coating 7 is at least coated on the mounting surface (lower part of the lead) to be soldered at the time of mounting, lead-free soldering having an oxidation preventing effect can be performed. or,
As shown in FIG. 3, only the lead portion may be covered by dip coating.

【0015】なお、本実施の形態ではロジンをエタノー
ルに溶解した例で説明したが、ロジンの他に松ヤニやア
ビエチン酸メチル等のアビエチン酸塩を主成分とする有
機酸塩等のロジン類と、メタノールやイソプロピルアル
コール等の脂肪族低級アルコールを用いても同じ効果が
得られる。またディップに替わるロジンの塗布方法とし
ては、溶液のスプレー吹きつけ法でも可能である。
In this embodiment, an example in which rosin is dissolved in ethanol has been described. However, in addition to rosin, rosins such as pine tar and organic acid salts containing abietate such as methyl abietate as a main component are used. The same effect can be obtained by using an aliphatic lower alcohol such as methanol or isopropyl alcohol. As a method of applying rosin instead of dip, a solution spraying method can be used.

【0016】本発明の効果例として、実施の形態で述べ
た厚み10μmのBi/Sn(5/90重量%)メッキ
にロジン被膜を形成した電極端子の半田付け性を示す。
なお、被膜形成後に加速処理として、高温多湿処理(8
5℃、85%、32時間)および高温処理(150℃、
32時間)を行った後に半田付け試験を実施し、従来例
としてはA)ロジン被膜を形成しない場合、B)ポリエ
チレンオキシドを塗布した場合と比較し、表1に示し
た。半田付け性は、330℃のAg/Bi/Sn(3.
5/7.5/89重量%)浴に3秒間浸漬した時の半田
濡れ面積が>95%の時を良好○、80〜95%を△、
<80%を×で判定した。また表中の()内にはその時
の不良数/扱い数を示した。表から明らかなように本発
明によって得られた半導体装置の電極端子は、過酷な処
理を加えても半田付け性は良好であることがわかる。
As an example of the effect of the present invention, the solderability of an electrode terminal having a rosin coating formed on a 10 μm thick Bi / Sn (5/90% by weight) plating described in the embodiment will be described.
After the film formation, high-temperature and high-humidity treatment (8
5 ° C, 85%, 32 hours) and high temperature treatment (150 ° C,
After 32 hours), a soldering test was carried out. The results are shown in Table 1 in comparison with A) a case where no rosin coating was formed and B) a case where polyethylene oxide was applied. Solderability was determined by Ag / Bi / Sn (3.
5 / 7.5 / 89% by weight) Good when the solder wetting area when immersed in the bath for 3 seconds is> 95%.
<80% was judged as x. The number in the parentheses in the table indicates the number of defects / the number handled. As is clear from the table, the electrode terminals of the semiconductor device obtained according to the present invention have good solderability even under severe processing.

【0017】[0017]

【表1】 [Table 1]

【0018】また、従来の鉛半田における評価結果は、
厚み10μmのPb/Sn(10/90重量%)メッキ
にロジン被膜を形成した電極端子の半田付け性(230
℃のPb/Sn(10/90重量%)浴に3秒間浸漬し
た時の半田濡れ面積率)でも表1と同様にロジン被膜処
理を行うことにより、過酷な処理を加えても半田付け性
は良好であった。
The evaluation result of the conventional lead solder is as follows.
The solderability of the electrode terminal having a rosin coating formed on Pb / Sn (10/90% by weight) plating with a thickness of 10 μm (230
The rosin coating treatment is performed in the same manner as in Table 1 even in a Pb / Sn (10/90% by weight) bath at 3 ° C. for 3 seconds, so that the solderability is improved even when severe treatment is applied. It was good.

【0019】このように過酷な処理においても半田付け
が良好であるということは世界中のどこでも使用できる
ことを意味し、また環境面から望まれているPbフリー
半田の導入を促進させる効果も持つ。
As described above, good soldering even in severe processing means that it can be used anywhere in the world, and also has the effect of promoting the introduction of Pb-free solder which is desired from an environmental point of view.

【0020】[0020]

【発明の効果】以上のように本発明は、電子部品の電極
端子上に金属被膜を形成後、その金属被膜上に松ヤニや
ロジンまたこれらの主成分であるアビエチン酸塩で代表
される有機酸塩をメタノール、エタノール、イソプロピ
ルアルコール等の脂肪族低級アルコールに溶解させ、そ
の溶液に浸漬したり溶液の蒸気を吹きつけた後、アルコ
ールが蒸発する温度で熱処理して薄い被膜を形成し、こ
の被膜によって金属被膜の酸化を防止させることによ
り、半田付け性の良い電子部品とその製造方法を提供す
ることを実現できるものである。
As described above, according to the present invention, after a metal film is formed on an electrode terminal of an electronic component, an organic material represented by pine tar, rosin, or abietic acid salt which is a main component thereof is formed on the metal film. The acid salt is dissolved in an aliphatic lower alcohol such as methanol, ethanol, or isopropyl alcohol, immersed in the solution or sprayed with the vapor of the solution, and then heat-treated at a temperature at which the alcohol evaporates to form a thin film. By preventing the metal film from being oxidized by the film, it is possible to provide an electronic component having good solderability and a method for manufacturing the same.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例によって得られた電子部品
(半導体装置)の断面図
FIG. 1 is a sectional view of an electronic component (semiconductor device) obtained according to an embodiment of the present invention.

【図2】本発明の一実施例によって得られた電子部品
(半導体装置)の断面図
FIG. 2 is a sectional view of an electronic component (semiconductor device) obtained according to an embodiment of the present invention.

【図3】本発明の一実施例によって得られた電子部品
(半導体装置)の断面図
FIG. 3 is a sectional view of an electronic component (semiconductor device) obtained according to an embodiment of the present invention.

【符号の説明】 1 リードフレーム 2 半導体チップ 3 金属細線 4 外部電極とつながっている領域 5 封止用樹脂 6 電極端子上の金属被膜 7 ロジン被膜[Explanation of Signs] 1 Lead frame 2 Semiconductor chip 3 Fine metal wire 4 Area connected to external electrode 5 Resin for sealing 6 Metal coating on electrode terminal 7 Rosin coating

─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───

【手続補正書】[Procedure amendment]

【提出日】平成11年9月21日(1999.9.2
1)
[Submission date] September 21, 1999 (September 9, 1999
1)

【手続補正1】[Procedure amendment 1]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】特許請求の範囲[Correction target item name] Claims

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【特許請求の範囲】[Claims]

【手続補正2】[Procedure amendment 2]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0007[Correction target item name] 0007

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0007】この目的を達成するために、本発明は電極
端子上に形成した金属被膜上に被膜の酸化を遅らせる為
の被膜を形成しようとするものである。すなわち、電子
部品の電極端子上に無鉛金属被膜を形成後、その金属被
膜上にその厚みが5〜50nmのロジン類を含む樹脂
膜を形成し、この被膜によって金属被膜の酸化を防止さ
せるものである。金属被膜上に形成する被膜は酸化防止
の目的の他に半田付け時のフラックス効果を持つ被膜が
最適であることは言うまでもなく、古くから半田付けの
フラックスとして使用されている松ヤニやロジンが有力
である。
In order to achieve this object, the present invention is to form a film on a metal film formed on an electrode terminal for delaying oxidation of the film. That is, after forming a lead-free metal coating on the electrode terminals of an electronic component, the metal coating
A resin film containing a rosin having a thickness of 5 to 50 nm is formed on the film, and the film prevents oxidation of the metal film. It is needless to say that the coating to be formed on the metal coating is not only for the purpose of preventing oxidation, but also has a flux effect at the time of soldering. It is.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 青井 和廣 大阪府高槻市幸町1番1号 松下電子工業 株式会社内 Fターム(参考) 4K062 AA01 BB06 BC01 CA02 CA05 FA09 5F067 AA00 DC11 DC12 DC16 DC18 DD00 DD05 DE01 DF01 EA04 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Kazuhiro Aoi 1-1, Komachi, Takatsuki-shi, Osaka Matsushita Electronics Co., Ltd. F-term (reference) 4K062 AA01 BB06 BC01 CA02 CA05 FA09 5F067 AA00 DC11 DC12 DC16 DC18 DD18 DD05 DE01 DF01 EA04

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 半田付け用金属被膜が形成された外部電
極端子に少なくともロジン類を含む樹脂被膜を設けた電
子部品。
1. An electronic component having a resin coating containing at least rosin on an external electrode terminal on which a metal coating for soldering is formed.
【請求項2】 金属被膜が無鉛半田付け用で、少なくと
もPdを含む金属被膜である請求項1に記載の電子部
品。
2. The electronic component according to claim 1, wherein the metal coating is a metal coating for lead-free soldering and containing at least Pd.
【請求項3】 樹脂被膜の膜厚さが50nm以下の外部
電極端子である請求項2に記載の電子部品。
3. The electronic component according to claim 2, wherein the resin component is an external electrode terminal having a thickness of 50 nm or less.
【請求項4】 電子素子をリードとともに樹脂封止し、
前記リードの外部電極端子と前記樹脂封止外囲部とに連
続して少なくともロジン類を含む樹脂被膜を設けた請求
項1に記載の電子部品。
4. An electronic element is resin-encapsulated together with a lead.
The electronic component according to claim 1, wherein a resin film containing at least rosin is provided continuously to the external electrode terminal of the lead and the resin-encapsulated surrounding portion.
【請求項5】 外部電極端子になくともロジン類を含む
樹脂被膜を設ける工程と、前記外部電極端子を熱処理す
る工程とを設けた電子部品の製造方法。
5. A method for manufacturing an electronic component, comprising: providing a resin film containing rosin even if not on an external electrode terminal; and heat-treating the external electrode terminal.
【請求項6】 樹脂被膜を設ける工程が外部電極端子を
少なくともロジン類を含むアルコール類溶液に浸すかも
しくは前記外部電極端子に前記少なくともロジン類を含
むアルコール類溶液を塗布する工程を有した電子部品の
製造方法。
6. An electronic component, wherein the step of providing a resin film includes a step of immersing the external electrode terminal in an alcohol solution containing at least rosin or applying the alcohol solution containing at least rosin to the external electrode terminal. Manufacturing method.
【請求項7】 アルコール類に溶解したロジン類の濃度
が0.1〜2重量%であるアルコール類溶液を用いる請
求項6に記載の電子部品の製造方法。
7. The method for producing an electronic component according to claim 6, wherein an alcohol solution having a concentration of rosin dissolved in the alcohol of 0.1 to 2% by weight is used.
JP19003298A 1998-07-06 1998-07-06 Electronic component and manufacture thereof Pending JP2000022063A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19003298A JP2000022063A (en) 1998-07-06 1998-07-06 Electronic component and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19003298A JP2000022063A (en) 1998-07-06 1998-07-06 Electronic component and manufacture thereof

Publications (1)

Publication Number Publication Date
JP2000022063A true JP2000022063A (en) 2000-01-21

Family

ID=16251240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19003298A Pending JP2000022063A (en) 1998-07-06 1998-07-06 Electronic component and manufacture thereof

Country Status (1)

Country Link
JP (1) JP2000022063A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002368362A (en) * 2001-06-05 2002-12-20 Sony Corp Printed wiring board, its base material, and electronic circuit device
JP2010062301A (en) * 2008-09-03 2010-03-18 Mitsubishi Electric Corp Electronic component, electronic apparatus, and method for producing electronic component

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002368362A (en) * 2001-06-05 2002-12-20 Sony Corp Printed wiring board, its base material, and electronic circuit device
JP2010062301A (en) * 2008-09-03 2010-03-18 Mitsubishi Electric Corp Electronic component, electronic apparatus, and method for producing electronic component

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