JP2000012639A - モニターtegのテスト回路 - Google Patents

モニターtegのテスト回路

Info

Publication number
JP2000012639A
JP2000012639A JP10177313A JP17731398A JP2000012639A JP 2000012639 A JP2000012639 A JP 2000012639A JP 10177313 A JP10177313 A JP 10177313A JP 17731398 A JP17731398 A JP 17731398A JP 2000012639 A JP2000012639 A JP 2000012639A
Authority
JP
Japan
Prior art keywords
teg
circuit
monitor
input
test
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP10177313A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000012639A5 (enExample
Inventor
Toshio Ukei
利夫 宇慶
Yoji Aoyanagi
洋史 青柳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP10177313A priority Critical patent/JP2000012639A/ja
Priority to US09/338,436 priority patent/US6239603B1/en
Publication of JP2000012639A publication Critical patent/JP2000012639A/ja
Publication of JP2000012639A5 publication Critical patent/JP2000012639A5/ja
Abandoned legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/30Marginal testing, e.g. by varying supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP10177313A 1998-06-24 1998-06-24 モニターtegのテスト回路 Abandoned JP2000012639A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10177313A JP2000012639A (ja) 1998-06-24 1998-06-24 モニターtegのテスト回路
US09/338,436 US6239603B1 (en) 1998-06-24 1999-06-23 Monitor TEG test circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10177313A JP2000012639A (ja) 1998-06-24 1998-06-24 モニターtegのテスト回路

Publications (2)

Publication Number Publication Date
JP2000012639A true JP2000012639A (ja) 2000-01-14
JP2000012639A5 JP2000012639A5 (enExample) 2005-08-25

Family

ID=16028808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10177313A Abandoned JP2000012639A (ja) 1998-06-24 1998-06-24 モニターtegのテスト回路

Country Status (2)

Country Link
US (1) US6239603B1 (enExample)
JP (1) JP2000012639A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6853177B2 (en) 2001-03-29 2005-02-08 Renesas Technology Corp. Semiconductor device with process monitor circuit and test method thereof
JP2008277417A (ja) * 2007-04-26 2008-11-13 Elpida Memory Inc 半導体装置及びその試験方法
JP2010527174A (ja) * 2007-04-30 2010-08-05 インターナショナル・ビジネス・マシーンズ・コーポレーション ディジタル・システムの信頼性を監視するシステム、およびその監視する方法
JP2010288142A (ja) * 2009-06-12 2010-12-24 Fujitsu Semiconductor Ltd 遅延比較回路、遅延比較方法、遅延回路および半導体集積回路
JP2012074725A (ja) * 2003-08-25 2012-04-12 Tau-Metrix Inc 半導体コンポーネントとウエハの製造を評価するための手法
JP2012510742A (ja) * 2008-11-28 2012-05-10 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド クロックデューティサイクル適合による半導体デバイスの性能の低下の補償
JP2017027413A (ja) * 2015-07-23 2017-02-02 富士通株式会社 プログラマブルロジックデバイス設計装置及びその方法
WO2024142904A1 (ja) * 2022-12-26 2024-07-04 東京エレクトロン株式会社 検査システム

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2308820A1 (en) * 2000-05-15 2001-11-15 The Governors Of The University Of Alberta Wireless radio frequency technique design and method for testing of integrated circuits and wafers
US6535013B2 (en) * 2000-12-28 2003-03-18 Intel Corporation Parameter variation probing technique
US20020129293A1 (en) * 2001-03-07 2002-09-12 Hutton John F. Scan based multiple ring oscillator structure for on-chip speed measurement
US6792374B2 (en) * 2001-10-30 2004-09-14 Micron Technology, Inc. Apparatus and method for determining effect of on-chip noise on signal propagation
KR100466984B1 (ko) * 2002-05-15 2005-01-24 삼성전자주식회사 테스트 소자 그룹 회로를 포함하는 집적 회로 칩 및 그것의 테스트 방법
GB2393795B (en) * 2002-10-01 2005-09-14 Motorola Inc Test structure, integrated circuit, system and method for testing a failure analysis instrument
US7260377B2 (en) * 2002-12-02 2007-08-21 Broadcom Corporation Variable-gain low noise amplifier for digital terrestrial applications
US7471941B2 (en) * 2002-12-02 2008-12-30 Broadcom Corporation Amplifier assembly including variable gain amplifier, parallel programmable amplifiers, and AGC
US8437720B2 (en) * 2002-12-02 2013-05-07 Broadcom Corporation Variable-gain low noise amplifier for digital terrestrial applications
US6798286B2 (en) * 2002-12-02 2004-09-28 Broadcom Corporation Gain control methods and systems in an amplifier assembly
US7309998B2 (en) 2002-12-02 2007-12-18 Burns Lawrence M Process monitor for monitoring an integrated circuit chip
US6933739B1 (en) * 2003-05-23 2005-08-23 Marvell Semiconductor Israel Ltd. Ring oscillator system
US7102363B2 (en) * 2003-11-21 2006-09-05 Neocera, Inc. Method and system for non-contact measurement of microwave capacitance of miniature structures of integrated circuits
US7239163B1 (en) * 2004-06-23 2007-07-03 Ridgetop Group, Inc. Die-level process monitor and method
US20060267621A1 (en) * 2005-05-27 2006-11-30 Harris Edward B On-chip apparatus and method for determining integrated circuit stress conditions
KR100674988B1 (ko) * 2005-08-11 2007-01-29 삼성전자주식회사 패키지 번인 테스트가 가능한 반도체 집적 회로 및 번인테스트 방법
DE102005052269A1 (de) * 2005-10-27 2007-05-10 Atmel Germany Gmbh Integrierte Schaltung mit integrierter Testhilfe-Teilschaltung
US20070263472A1 (en) * 2006-05-11 2007-11-15 Anderson Brent A Process environment variation evaluation
KR100772547B1 (ko) * 2006-08-31 2007-11-02 주식회사 하이닉스반도체 반도체 장치 및 그의 테스트 방법
US8310265B2 (en) * 2007-05-02 2012-11-13 Nxp B.V. IC testing methods and apparatus
US7733109B2 (en) * 2007-10-15 2010-06-08 International Business Machines Corporation Test structure for resistive open detection using voltage contrast inspection and related methods
US20090112635A1 (en) * 2007-10-30 2009-04-30 Kenneth Rubinstein Foreign Non-Qualified Deferred Compensation Hybrid Trust Strategy
US20090250698A1 (en) * 2008-04-08 2009-10-08 Nagaraj Savithri Fabrication management system
US8499230B2 (en) * 2008-05-07 2013-07-30 Lsi Corporation Critical path monitor for an integrated circuit and method of operation thereof
US8008912B1 (en) 2008-12-16 2011-08-30 Western Digital (Fremont), Llc Method and system for testing P2 stiffness of a magnetoresistance transducer at the wafer level
KR101094903B1 (ko) * 2009-07-30 2011-12-15 주식회사 하이닉스반도체 반도체 집적 회로의 테스트 장치
US8754412B2 (en) 2012-01-03 2014-06-17 International Business Machines Corporation Intra die variation monitor using through-silicon via

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961251A (en) * 1974-12-20 1976-06-01 International Business Machines Corporation Testing embedded arrays
DE2905294A1 (de) * 1979-02-12 1980-08-21 Philips Patentverwaltung Integrierte schaltungsanordnung in mos-technik mit feldeffekttransistoren
US4243937A (en) * 1979-04-06 1981-01-06 General Instrument Corporation Microelectronic device and method for testing same
US4719411A (en) * 1985-05-13 1988-01-12 California Institute Of Technology Addressable test matrix for measuring analog transfer characteristics of test elements used for integrated process control and device evaluation
JPS61265829A (ja) * 1985-05-20 1986-11-25 Fujitsu Ltd 半導体集積回路
US4782283A (en) * 1986-08-22 1988-11-01 Aida Corporation Apparatus for scan testing CMOS integrated systems
US4970454A (en) * 1986-12-09 1990-11-13 Texas Instruments Incorporated Packaged semiconductor device with test circuits for determining fabrication parameters
JPH03228353A (ja) 1990-02-02 1991-10-09 Mitsubishi Electric Corp ゲートアレイ
JPH08148537A (ja) * 1994-11-18 1996-06-07 Toshiba Corp 半導体集積回路
US6005406A (en) * 1995-12-07 1999-12-21 International Business Machines Corporation Test device and method facilitating aggressive circuit design

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6853177B2 (en) 2001-03-29 2005-02-08 Renesas Technology Corp. Semiconductor device with process monitor circuit and test method thereof
JP2012074725A (ja) * 2003-08-25 2012-04-12 Tau-Metrix Inc 半導体コンポーネントとウエハの製造を評価するための手法
JP2008277417A (ja) * 2007-04-26 2008-11-13 Elpida Memory Inc 半導体装置及びその試験方法
JP2010527174A (ja) * 2007-04-30 2010-08-05 インターナショナル・ビジネス・マシーンズ・コーポレーション ディジタル・システムの信頼性を監視するシステム、およびその監視する方法
JP2012510742A (ja) * 2008-11-28 2012-05-10 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド クロックデューティサイクル適合による半導体デバイスの性能の低下の補償
JP2010288142A (ja) * 2009-06-12 2010-12-24 Fujitsu Semiconductor Ltd 遅延比較回路、遅延比較方法、遅延回路および半導体集積回路
JP2017027413A (ja) * 2015-07-23 2017-02-02 富士通株式会社 プログラマブルロジックデバイス設計装置及びその方法
WO2024142904A1 (ja) * 2022-12-26 2024-07-04 東京エレクトロン株式会社 検査システム
KR20250132494A (ko) 2022-12-26 2025-09-04 도쿄엘렉트론가부시키가이샤 검사 시스템

Also Published As

Publication number Publication date
US6239603B1 (en) 2001-05-29

Similar Documents

Publication Publication Date Title
US6239603B1 (en) Monitor TEG test circuit
KR100466984B1 (ko) 테스트 소자 그룹 회로를 포함하는 집적 회로 칩 및 그것의 테스트 방법
US7109734B2 (en) Characterizing circuit performance by separating device and interconnect impact on signal delay
US6853177B2 (en) Semiconductor device with process monitor circuit and test method thereof
US9046573B1 (en) Addressable test arrays for characterizing integrated circuit device parameters
CN100576539C (zh) 半导体晶片、半导体芯片、半导体器件及晶片测试方法
JP3726711B2 (ja) 半導体装置
EP3292420B1 (en) Ring oscillator test circuit
CN101013677B (zh) 半导体晶片测试设备和测试半导体晶片的方法
US7843206B2 (en) Semiconductor integrated circuit and method for inspecting same
JP3592316B2 (ja) 半導体特性評価装置
TW201510544A (zh) 測試系統以及半導體元件
CN100504418C (zh) 测试射频和模拟电路
US6489799B1 (en) Integrated circuit device having process parameter measuring circuit
US6806731B2 (en) Semiconductor integrated circuit device and fault-detecting method of a semiconductor integrated circuit device
JP3123454B2 (ja) 半導体集積回路
CN113711065A (zh) 半导体集成电路装置和半导体集成电路装置的检查方法
US20060025954A1 (en) Process variation detector and process variation detecting method
US20070132480A1 (en) Power supply noise resistance testing circuit and power supply noise resistance testing method
JP2007141882A (ja) 半導体装置、半導体装置の試験装置および試験方法
US20060261859A1 (en) Semiconductor integrated circuit device
US20250306083A1 (en) Inspection system
Jenkins et al. On-chip circuit to monitor long-term NBTI and PBTI degradation
JPH1090356A (ja) 半導体装置
JPH04213849A (ja) 半導体装置及びその初期不良検出方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050218

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050218

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050624

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060704

A762 Written abandonment of application

Free format text: JAPANESE INTERMEDIATE CODE: A762

Effective date: 20060726