JP1563718S - - Google Patents

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Publication number
JP1563718S
JP1563718S JPD2015-29186F JP2015029186F JP1563718S JP 1563718 S JP1563718 S JP 1563718S JP 2015029186 F JP2015029186 F JP 2015029186F JP 1563718 S JP1563718 S JP 1563718S
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JPD2015-29186F
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JPD2015-29186F priority Critical patent/JP1563718S/ja
Priority to US29/569,263 priority patent/USD791091S1/en
Priority to TW105303687F priority patent/TWD187175S/zh
Application granted granted Critical
Publication of JP1563718S publication Critical patent/JP1563718S/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JPD2015-29186F 2015-12-28 2015-12-28 Active JP1563718S (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JPD2015-29186F JP1563718S (de) 2015-12-28 2015-12-28
US29/569,263 USD791091S1 (en) 2015-12-28 2016-06-24 Pattern wafer
TW105303687F TWD187175S (zh) 2015-12-28 2016-06-27 圖案化石英晶圓

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JPD2015-29186F JP1563718S (de) 2015-12-28 2015-12-28

Publications (1)

Publication Number Publication Date
JP1563718S true JP1563718S (de) 2016-11-21

Family

ID=57321959

Family Applications (1)

Application Number Title Priority Date Filing Date
JPD2015-29186F Active JP1563718S (de) 2015-12-28 2015-12-28

Country Status (3)

Country Link
US (1) USD791091S1 (de)
JP (1) JP1563718S (de)
TW (1) TWD187175S (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWD174921S (zh) * 2014-12-17 2016-04-11 日本碍子股份有限公司 複合基板之部分
USD897974S1 (en) * 2018-03-29 2020-10-06 Hamamatsu Photonics K.K. Semiconductor wafer
USD958094S1 (en) 2019-07-29 2022-07-19 Samsung Display Co., Ltd. Display panel
USD940131S1 (en) * 2019-07-29 2022-01-04 Samsung Display Co., Ltd. Display panel
USD966276S1 (en) 2019-07-29 2022-10-11 Samsung Display Co., Ltd. Display module for wearable device

Family Cites Families (24)

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Publication number Priority date Publication date Assignee Title
DE1427772A1 (de) * 1965-11-23 1968-12-12 Telefunken Patent Verfahren zum Zerlegen einer Halbleiterscheibe in einzelne Halbleiterplaettchen
JPS6088535U (ja) * 1983-11-24 1985-06-18 住友電気工業株式会社 半導体ウエハ
US5182233A (en) * 1989-08-02 1993-01-26 Kabushiki Kaisha Toshiba Compound semiconductor pellet, and method for dicing compound semiconductor wafer
JPH04276645A (ja) * 1991-03-04 1992-10-01 Toshiba Corp 化合物半導体ウエーハのダイシング方法
US20020121915A1 (en) * 2001-03-05 2002-09-05 Agere Systems Guardian Corp. Automated pattern clustering detection for wafer probe maps
KR20040094390A (ko) * 2002-04-11 2004-11-09 세키스이가가쿠 고교가부시키가이샤 반도체 칩의 제조 방법
SG111069A1 (en) * 2002-06-18 2005-05-30 Micron Technology Inc Semiconductor devices including peripherally located bond pads, assemblies, packages, and methods
JP2004207606A (ja) * 2002-12-26 2004-07-22 Disco Abrasive Syst Ltd ウェーハサポートプレート
DE102005004827B4 (de) * 2004-02-03 2011-03-31 Disco Corp. Wafer-Unterteilungsverfahren
US8084400B2 (en) * 2005-10-11 2011-12-27 Intermolecular, Inc. Methods for discretized processing and process sequence integration of regions of a substrate
SG126885A1 (en) * 2005-04-27 2006-11-29 Disco Corp Semiconductor wafer and processing method for same
USD552565S1 (en) * 2005-09-08 2007-10-09 Tokyo Ohka Kogyo Co., Ltd. Supporting plate
US7902063B2 (en) * 2005-10-11 2011-03-08 Intermolecular, Inc. Methods for discretized formation of masking and capping layers on a substrate
JP4913517B2 (ja) * 2006-09-26 2012-04-11 株式会社ディスコ ウエーハの研削加工方法
US8882917B1 (en) * 2009-12-31 2014-11-11 Intermolecular, Inc. Substrate processing including correction for deposition location
USD614593S1 (en) * 2008-07-21 2010-04-27 Asm Genitech Korea Ltd Substrate support for a semiconductor deposition apparatus
JP2011100922A (ja) * 2009-11-09 2011-05-19 Toshiba Corp パターン形成方法、パターン形成システム及び半導体装置の製造方法
US8263876B2 (en) * 2009-12-30 2012-09-11 Harvatek Corporation Conductive substrate structure with conductive channels formed by using a two-sided cut approach and a method for manufacturing the same
CA138031S (en) * 2010-08-17 2011-11-17 Sumitomo Electric Industries Semiconductor substrate
JP1441120S (de) * 2010-08-17 2015-05-11
CA138030S (en) * 2010-08-17 2011-11-17 Sumitomo Electric Industries Semiconductor substrate
JP2013172082A (ja) * 2012-02-22 2013-09-02 Toshiba Corp パターン形成方法、半導体装置の製造方法および塗布装置
USD716742S1 (en) * 2013-09-13 2014-11-04 Asm Ip Holding B.V. Substrate supporter for semiconductor deposition apparatus
USD720313S1 (en) * 2014-06-16 2014-12-30 Emcore Solar Power, Inc. Semiconductor wafer with dicing positions for solar cell fabrication

Also Published As

Publication number Publication date
TWD187175S (zh) 2017-12-11
USD791091S1 (en) 2017-07-04

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