DE1427772A1
(de)
*
|
1965-11-23 |
1968-12-12 |
Telefunken Patent |
Verfahren zum Zerlegen einer Halbleiterscheibe in einzelne Halbleiterplaettchen
|
JPS6088535U
(ja)
*
|
1983-11-24 |
1985-06-18 |
住友電気工業株式会社 |
半導体ウエハ
|
US5182233A
(en)
*
|
1989-08-02 |
1993-01-26 |
Kabushiki Kaisha Toshiba |
Compound semiconductor pellet, and method for dicing compound semiconductor wafer
|
JPH04276645A
(ja)
*
|
1991-03-04 |
1992-10-01 |
Toshiba Corp |
化合物半導体ウエーハのダイシング方法
|
US20020121915A1
(en)
*
|
2001-03-05 |
2002-09-05 |
Agere Systems Guardian Corp. |
Automated pattern clustering detection for wafer probe maps
|
KR20040094390A
(ko)
*
|
2002-04-11 |
2004-11-09 |
세키스이가가쿠 고교가부시키가이샤 |
반도체 칩의 제조 방법
|
SG111069A1
(en)
*
|
2002-06-18 |
2005-05-30 |
Micron Technology Inc |
Semiconductor devices including peripherally located bond pads, assemblies, packages, and methods
|
JP2004207606A
(ja)
*
|
2002-12-26 |
2004-07-22 |
Disco Abrasive Syst Ltd |
ウェーハサポートプレート
|
DE102005004827B4
(de)
*
|
2004-02-03 |
2011-03-31 |
Disco Corp. |
Wafer-Unterteilungsverfahren
|
US8084400B2
(en)
*
|
2005-10-11 |
2011-12-27 |
Intermolecular, Inc. |
Methods for discretized processing and process sequence integration of regions of a substrate
|
SG126885A1
(en)
*
|
2005-04-27 |
2006-11-29 |
Disco Corp |
Semiconductor wafer and processing method for same
|
USD552565S1
(en)
*
|
2005-09-08 |
2007-10-09 |
Tokyo Ohka Kogyo Co., Ltd. |
Supporting plate
|
US7902063B2
(en)
*
|
2005-10-11 |
2011-03-08 |
Intermolecular, Inc. |
Methods for discretized formation of masking and capping layers on a substrate
|
JP4913517B2
(ja)
*
|
2006-09-26 |
2012-04-11 |
株式会社ディスコ |
ウエーハの研削加工方法
|
US8882917B1
(en)
*
|
2009-12-31 |
2014-11-11 |
Intermolecular, Inc. |
Substrate processing including correction for deposition location
|
USD614593S1
(en)
*
|
2008-07-21 |
2010-04-27 |
Asm Genitech Korea Ltd |
Substrate support for a semiconductor deposition apparatus
|
JP2011100922A
(ja)
*
|
2009-11-09 |
2011-05-19 |
Toshiba Corp |
パターン形成方法、パターン形成システム及び半導体装置の製造方法
|
US8263876B2
(en)
*
|
2009-12-30 |
2012-09-11 |
Harvatek Corporation |
Conductive substrate structure with conductive channels formed by using a two-sided cut approach and a method for manufacturing the same
|
CA138031S
(en)
*
|
2010-08-17 |
2011-11-17 |
Sumitomo Electric Industries |
Semiconductor substrate
|
JP1441120S
(de)
*
|
2010-08-17 |
2015-05-11 |
|
|
CA138030S
(en)
*
|
2010-08-17 |
2011-11-17 |
Sumitomo Electric Industries |
Semiconductor substrate
|
JP2013172082A
(ja)
*
|
2012-02-22 |
2013-09-02 |
Toshiba Corp |
パターン形成方法、半導体装置の製造方法および塗布装置
|
USD716742S1
(en)
*
|
2013-09-13 |
2014-11-04 |
Asm Ip Holding B.V. |
Substrate supporter for semiconductor deposition apparatus
|
USD720313S1
(en)
*
|
2014-06-16 |
2014-12-30 |
Emcore Solar Power, Inc. |
Semiconductor wafer with dicing positions for solar cell fabrication
|