ITMI910177A0 - DYNAMIC RANDOM ACCESS MEMORY HAVING A STACKED TYPE CAPACITOR AND A PROCEDURE FOR MANUFACTURING THEREOF - Google Patents

DYNAMIC RANDOM ACCESS MEMORY HAVING A STACKED TYPE CAPACITOR AND A PROCEDURE FOR MANUFACTURING THEREOF

Info

Publication number
ITMI910177A0
ITMI910177A0 IT91MI177A ITMI910177A ITMI910177A0 IT MI910177 A0 ITMI910177 A0 IT MI910177A0 IT 91MI177 A IT91MI177 A IT 91MI177A IT MI910177 A ITMI910177 A IT MI910177A IT MI910177 A0 ITMI910177 A0 IT MI910177A0
Authority
IT
Italy
Prior art keywords
procedure
manufacturing
random access
access memory
dynamic random
Prior art date
Application number
IT91MI177A
Other languages
Italian (it)
Inventor
Natsuo Ajika
Hideaki Arima
Atsushi Hachisuka
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2251306A external-priority patent/JP2528731B2/en
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of ITMI910177A0 publication Critical patent/ITMI910177A0/en
Publication of ITMI910177A1 publication Critical patent/ITMI910177A1/en
Application granted granted Critical
Publication of IT1245495B publication Critical patent/IT1245495B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
ITMI910177A 1990-01-26 1991-01-24 DYNAMIC RANDOM ACCESS MEMORY HAVING A STACKED TYPE CAPACITOR AND ITS MANUFACTURING PROCEDURE IT1245495B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1696090 1990-01-26
JP8986990 1990-04-03
JP2251306A JP2528731B2 (en) 1990-01-26 1990-09-19 Semiconductor memory device and manufacturing method thereof

Publications (3)

Publication Number Publication Date
ITMI910177A0 true ITMI910177A0 (en) 1991-01-24
ITMI910177A1 ITMI910177A1 (en) 1992-07-24
IT1245495B IT1245495B (en) 1994-09-27

Family

ID=27281633

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI910177A IT1245495B (en) 1990-01-26 1991-01-24 DYNAMIC RANDOM ACCESS MEMORY HAVING A STACKED TYPE CAPACITOR AND ITS MANUFACTURING PROCEDURE

Country Status (2)

Country Link
DE (1) DE4102184C2 (en)
IT (1) IT1245495B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2689031B2 (en) * 1991-04-01 1997-12-10 三菱電機株式会社 Semiconductor memory device and method of manufacturing the same
KR940004606B1 (en) * 1991-09-13 1994-05-25 금성일렉트론 주식회사 Method of fabricating a semiconductor memory capacitor
TW221720B (en) * 1991-11-15 1994-03-11 Gold Star Co
DE4222467C1 (en) * 1992-07-08 1993-06-24 Siemens Ag, 8000 Muenchen, De
JPH06151749A (en) * 1992-11-04 1994-05-31 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JP3272517B2 (en) * 1993-12-01 2002-04-08 三菱電機株式会社 Method for manufacturing semiconductor device
TW427014B (en) * 1997-12-24 2001-03-21 United Microelectronics Corp The manufacturing method of the capacitors of DRAM
GB2336714B (en) * 1997-12-24 2000-03-08 United Semiconductor Corp Method of fabricating capacitor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3918924C2 (en) * 1988-06-10 1996-03-21 Mitsubishi Electric Corp Manufacturing method for a semiconductor memory device
JPH0221652A (en) * 1988-07-08 1990-01-24 Mitsubishi Electric Corp Semiconductor storage device
JP2519569B2 (en) * 1990-04-27 1996-07-31 三菱電機株式会社 Semiconductor memory device and manufacturing method thereof

Also Published As

Publication number Publication date
DE4102184A1 (en) 1991-08-08
IT1245495B (en) 1994-09-27
DE4102184C2 (en) 1995-03-16
ITMI910177A1 (en) 1992-07-24

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19960423