IT1168282B - MOS TYPE RANDOM ACCESS MEMORY - Google Patents

MOS TYPE RANDOM ACCESS MEMORY

Info

Publication number
IT1168282B
IT1168282B IT22952/83A IT2295283A IT1168282B IT 1168282 B IT1168282 B IT 1168282B IT 22952/83 A IT22952/83 A IT 22952/83A IT 2295283 A IT2295283 A IT 2295283A IT 1168282 B IT1168282 B IT 1168282B
Authority
IT
Italy
Prior art keywords
random access
access memory
mos type
type random
mos
Prior art date
Application number
IT22952/83A
Other languages
Italian (it)
Other versions
IT8322952A1 (en
IT8322952A0 (en
Inventor
Matsumoto Tetsuro
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8322952A0 publication Critical patent/IT8322952A0/en
Publication of IT8322952A1 publication Critical patent/IT8322952A1/en
Application granted granted Critical
Publication of IT1168282B publication Critical patent/IT1168282B/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4082—Address Buffers; level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
IT22952/83A 1982-09-22 1983-09-21 MOS TYPE RANDOM ACCESS MEMORY IT1168282B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57163887A JPS5954096A (en) 1982-09-22 1982-09-22 Dynamic mosram

Publications (3)

Publication Number Publication Date
IT8322952A0 IT8322952A0 (en) 1983-09-21
IT8322952A1 IT8322952A1 (en) 1985-03-21
IT1168282B true IT1168282B (en) 1987-05-20

Family

ID=15782682

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22952/83A IT1168282B (en) 1982-09-22 1983-09-21 MOS TYPE RANDOM ACCESS MEMORY

Country Status (6)

Country Link
JP (1) JPS5954096A (en)
KR (1) KR840005885A (en)
DE (1) DE3333974A1 (en)
FR (1) FR2533349B1 (en)
GB (1) GB2127596A (en)
IT (1) IT1168282B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3427454A1 (en) * 1984-07-25 1986-01-30 Siemens AG, 1000 Berlin und 8000 München INTEGRATED CIRCUIT FOR A DYNAMIC SEMICONDUCTOR MEMORY CONSTRUCTED IN COMPLEMENTARY CIRCUIT TECHNOLOGY
JPS6212991A (en) * 1985-07-10 1987-01-21 Fujitsu Ltd Semiconductor memory device
US4792929A (en) * 1987-03-23 1988-12-20 Zenith Electronics Corporation Data processing system with extended memory access
US5173878A (en) * 1987-11-25 1992-12-22 Kabushiki Kaisha Toshiba Semiconductor memory including address multiplexing circuitry for changing the order of supplying row and column addresses between read and write cycles
KR930008838A (en) * 1991-10-31 1993-05-22 김광호 Address input buffer
KR0120592B1 (en) * 1994-09-09 1997-10-20 김주용 Address buffer having signal transform logic
KR0145852B1 (en) * 1995-04-14 1998-11-02 김광호 Address buffer of semiconductor memory device
GB9902561D0 (en) * 1999-02-06 1999-03-24 Mitel Semiconductor Ltd Synchronous memory
KR102465540B1 (en) 2017-05-18 2022-11-11 삼성전자주식회사 Chemical liquid supply apparatus and semiconductor processing apparatus having the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5914827B2 (en) * 1976-08-23 1984-04-06 株式会社日立製作所 address selection system
JPS5381021A (en) * 1976-12-27 1978-07-18 Nippon Telegr & Teleph Corp <Ntt> Address input circuit
JPS5575899U (en) * 1978-11-20 1980-05-24
JPS57118599U (en) * 1981-01-14 1982-07-23
US4541078A (en) * 1982-12-22 1985-09-10 At&T Bell Laboratories Memory using multiplexed row and column address lines

Also Published As

Publication number Publication date
IT8322952A1 (en) 1985-03-21
DE3333974A1 (en) 1984-03-22
IT8322952A0 (en) 1983-09-21
GB8324526D0 (en) 1983-10-12
JPS5954096A (en) 1984-03-28
GB2127596A (en) 1984-04-11
JPH0379799B2 (en) 1991-12-19
FR2533349B1 (en) 1991-09-06
FR2533349A1 (en) 1984-03-23
KR840005885A (en) 1984-11-19

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19950927