ITMI20112275A1 - Dispositivo a semiconduttore e procedimento per la sua fabbricazione - Google Patents

Dispositivo a semiconduttore e procedimento per la sua fabbricazione

Info

Publication number
ITMI20112275A1
ITMI20112275A1 IT002275A ITMI20112275A ITMI20112275A1 IT MI20112275 A1 ITMI20112275 A1 IT MI20112275A1 IT 002275 A IT002275 A IT 002275A IT MI20112275 A ITMI20112275 A IT MI20112275A IT MI20112275 A1 ITMI20112275 A1 IT MI20112275A1
Authority
IT
Italy
Prior art keywords
procedure
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
IT002275A
Other languages
English (en)
Inventor
Stephen Daley Arthur
Peter Almern Losee
Kevin Sean Matocha
Zachary Matthew Stum
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of ITMI20112275A1 publication Critical patent/ITMI20112275A1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
IT002275A 2010-12-17 2011-12-15 Dispositivo a semiconduttore e procedimento per la sua fabbricazione ITMI20112275A1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/971,188 US8815721B2 (en) 2010-12-17 2010-12-17 Semiconductor device and method of manufacturing the same

Publications (1)

Publication Number Publication Date
ITMI20112275A1 true ITMI20112275A1 (it) 2012-06-18

Family

ID=45955535

Family Applications (1)

Application Number Title Priority Date Filing Date
IT002275A ITMI20112275A1 (it) 2010-12-17 2011-12-15 Dispositivo a semiconduttore e procedimento per la sua fabbricazione

Country Status (4)

Country Link
US (2) US8815721B2 (it)
JP (1) JP2012134492A (it)
DE (1) DE102011056544A1 (it)
IT (1) ITMI20112275A1 (it)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5802231B2 (ja) 2013-03-22 2015-10-28 株式会社東芝 半導体装置及びその製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163905A (ja) * 1992-11-27 1994-06-10 Sanyo Electric Co Ltd 絶縁ゲート半導体装置の製造方法
JP3206727B2 (ja) * 1997-02-20 2001-09-10 富士電機株式会社 炭化けい素縦型ｍｏｓｆｅｔおよびその製造方法
US6346726B1 (en) * 1998-11-09 2002-02-12 International Rectifier Corp. Low voltage MOSFET power device having a minimum figure of merit
US6956238B2 (en) * 2000-10-03 2005-10-18 Cree, Inc. Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel
JP4876321B2 (ja) * 2001-03-30 2012-02-15 株式会社デンソー 炭化珪素半導体装置の製造方法
JP4463482B2 (ja) 2002-07-11 2010-05-19 パナソニック株式会社 Ｍｉｓｆｅｔ及びその製造方法
JP4800602B2 (ja) * 2004-09-09 2011-10-26 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
US8377812B2 (en) 2006-11-06 2013-02-19 General Electric Company SiC MOSFETs and self-aligned fabrication methods thereof
US7790616B2 (en) 2007-08-29 2010-09-07 Northrop Grumman Systems Corporation Encapsulated silicidation for improved SiC processing and device yield
US7982224B2 (en) * 2007-10-15 2011-07-19 Panasonic Corporation Semiconductor device with silicon carbide epitaxial layer including dopant profiles for reducing current overconcentration
DE102008059649B4 (de) 2008-11-28 2013-01-31 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Geringere topographieabhängige Unregelmäßigkeiten während der Strukturierung zweier unterschiedlicher verspannungsinduzierender Schichten in der Kontaktebene eines Halbleiterbauelements
JP2012114104A (ja) * 2009-02-24 2012-06-14 Hitachi Ltd 蓄積型絶縁ゲート型電界効果型トランジスタ

Also Published As

Publication number Publication date
DE102011056544A1 (de) 2012-06-21
JP2012134492A (ja) 2012-07-12
US8815721B2 (en) 2014-08-26
US20140361315A1 (en) 2014-12-11
US20120153362A1 (en) 2012-06-21

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