IT985023B - Circuito integrato a semiconduttori isolato mediante materiale dielet trico e metodo per la manifattura di esso - Google Patents

Circuito integrato a semiconduttori isolato mediante materiale dielet trico e metodo per la manifattura di esso

Info

Publication number
IT985023B
IT985023B IT49912/73A IT4991273A IT985023B IT 985023 B IT985023 B IT 985023B IT 49912/73 A IT49912/73 A IT 49912/73A IT 4991273 A IT4991273 A IT 4991273A IT 985023 B IT985023 B IT 985023B
Authority
IT
Italy
Prior art keywords
semiconductors
isolated
manufacturing
integrated circuit
dieletric material
Prior art date
Application number
IT49912/73A
Other languages
English (en)
Original Assignee
Tokyo Shibaura Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co filed Critical Tokyo Shibaura Electric Co
Application granted granted Critical
Publication of IT985023B publication Critical patent/IT985023B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
IT49912/73A 1972-05-13 1973-05-11 Circuito integrato a semiconduttori isolato mediante materiale dielet trico e metodo per la manifattura di esso IT985023B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47047382A JPS5120267B2 (it) 1972-05-13 1972-05-13

Publications (1)

Publication Number Publication Date
IT985023B true IT985023B (it) 1974-11-30

Family

ID=12773536

Family Applications (1)

Application Number Title Priority Date Filing Date
IT49912/73A IT985023B (it) 1972-05-13 1973-05-11 Circuito integrato a semiconduttori isolato mediante materiale dielet trico e metodo per la manifattura di esso

Country Status (6)

Country Link
US (2) US3858237A (it)
JP (1) JPS5120267B2 (it)
CA (1) CA966585A (it)
FR (2) FR2184715B1 (it)
GB (2) GB1430425A (it)
IT (1) IT985023B (it)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3956034A (en) * 1973-07-19 1976-05-11 Harris Corporation Isolated photodiode array
US3913124A (en) * 1974-01-03 1975-10-14 Motorola Inc Integrated semiconductor transistor structure with epitaxial contact to the buried sub-collector including fabrication method therefor
US3956033A (en) * 1974-01-03 1976-05-11 Motorola, Inc. Method of fabricating an integrated semiconductor transistor structure with epitaxial contact to the buried sub-collector
US3920482A (en) * 1974-03-13 1975-11-18 Signetics Corp Method for forming a semiconductor structure having islands isolated by adjacent moats
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same
US4173674A (en) * 1975-05-12 1979-11-06 Hitachi, Ltd. Dielectric insulator separated substrate for semiconductor integrated circuits
US3976511A (en) * 1975-06-30 1976-08-24 Ibm Corporation Method for fabricating integrated circuit structures with full dielectric isolation by ion bombardment
JPS5293285A (en) * 1976-02-02 1977-08-05 Hitachi Ltd Structure for semiconductor device
US4095330A (en) * 1976-08-30 1978-06-20 Raytheon Company Composite semiconductor integrated circuit and method of manufacture
US4228450A (en) * 1977-10-25 1980-10-14 International Business Machines Corporation Buried high sheet resistance structure for high density integrated circuits with reach through contacts
JPS5951743B2 (ja) * 1978-11-08 1984-12-15 株式会社日立製作所 半導体集積装置
US4269636A (en) * 1978-12-29 1981-05-26 Harris Corporation Method of fabricating self-aligned bipolar transistor process and device utilizing etching and self-aligned masking
US4242697A (en) * 1979-03-14 1980-12-30 Bell Telephone Laboratories, Incorporated Dielectrically isolated high voltage semiconductor devices
JPS55138229A (en) * 1979-04-13 1980-10-28 Hitachi Ltd Manufacture of dielectric material for insulation- separation substrate
GB2060252B (en) * 1979-09-17 1984-02-22 Nippon Telegraph & Telephone Mutually isolated complementary semiconductor elements
US4255209A (en) * 1979-12-21 1981-03-10 Harris Corporation Process of fabricating an improved I2 L integrated circuit utilizing diffusion and epitaxial deposition
US4290831A (en) * 1980-04-18 1981-09-22 Harris Corporation Method of fabricating surface contacts for buried layer into dielectric isolated islands
US4468414A (en) * 1983-07-29 1984-08-28 Harris Corporation Dielectric isolation fabrication for laser trimming
US4510518A (en) * 1983-07-29 1985-04-09 Harris Corporation Dielectric isolation fabrication for laser trimming
JPS6081839A (ja) * 1983-10-12 1985-05-09 Fujitsu Ltd 半導体装置の製造方法
JPS6097659A (ja) * 1983-11-01 1985-05-31 Matsushita Electronics Corp 半導体集積回路
KR850004178A (ko) * 1983-11-30 1985-07-01 야마모도 다꾸마 유전체 분리형 집적회로 장치의 제조방법
US4879585A (en) * 1984-03-31 1989-11-07 Kabushiki Kaisha Toshiba Semiconductor device
JPS61121433A (ja) * 1984-11-19 1986-06-09 Sharp Corp 半導体基板
JPS62172671A (ja) * 1986-01-27 1987-07-29 松下電工株式会社 電話線接続用ジヤツク
US4994301A (en) * 1986-06-30 1991-02-19 Nihon Sinku Gijutsu Kabusiki Kaisha ACVD (chemical vapor deposition) method for selectively depositing metal on a substrate
US4849260A (en) * 1986-06-30 1989-07-18 Nihon Sinku Gijutsu Kabushiki Kaisha Method for selectively depositing metal on a substrate
US5246877A (en) * 1989-01-31 1993-09-21 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having a polycrystalline electrode region
US5270569A (en) * 1990-01-24 1993-12-14 Harris Corporation Method and device in which bottoming of a well in a dielectrically isolated island is assured
US5306649A (en) * 1991-07-26 1994-04-26 Avantek, Inc. Method for producing a fully walled emitter-base structure in a bipolar transistor
DE4233773C2 (de) * 1992-10-07 1996-09-19 Daimler Benz Ag Halbleiterstruktur für Halbleiterbauelemente mit hoher Durchbruchspannung
US5318663A (en) * 1992-12-23 1994-06-07 International Business Machines Corporation Method for thinning SOI films having improved thickness uniformity
JP3748744B2 (ja) * 1999-10-18 2006-02-22 Ｎｅｃエレクトロニクス株式会社 半導体装置
US6498381B2 (en) * 2001-02-22 2002-12-24 Tru-Si Technologies, Inc. Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3381182A (en) * 1964-10-19 1968-04-30 Philco Ford Corp Microcircuits having buried conductive layers
US3440498A (en) * 1966-03-14 1969-04-22 Nat Semiconductor Corp Contacts for insulation isolated semiconductor integrated circuitry
US3432919A (en) * 1966-10-31 1969-03-18 Raytheon Co Method of making semiconductor diodes
FR2014743A1 (it) * 1968-07-26 1970-04-17 Signetics Corp
US3624463A (en) * 1969-10-17 1971-11-30 Motorola Inc Method of and apparatus for indicating semiconductor island thickness and for increasing isolation and decreasing capacity between islands
US3738877A (en) * 1970-08-24 1973-06-12 Motorola Inc Semiconductor devices

Also Published As

Publication number Publication date
FR2184715A1 (it) 1973-12-28
JPS499985A (it) 1974-01-29
DE2324384A1 (de) 1973-11-22
US3858237A (en) 1974-12-31
AU5536273A (en) 1975-07-03
US3826699A (en) 1974-07-30
CA966585A (en) 1975-04-22
FR2184716A1 (it) 1973-12-28
FR2184716B1 (it) 1978-01-06
JPS5120267B2 (it) 1976-06-23
GB1430425A (en) 1976-03-31
DE2324385B2 (de) 1976-12-23
FR2184715B1 (it) 1978-02-10
DE2324384B2 (de) 1977-03-17
GB1363223A (en) 1974-08-14
DE2324385A1 (de) 1973-11-22

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