IT979130B - Metodo per la fabbricazione di un diodo zener - Google Patents
Metodo per la fabbricazione di un diodo zenerInfo
- Publication number
- IT979130B IT979130B IT2041773A IT2041773A IT979130B IT 979130 B IT979130 B IT 979130B IT 2041773 A IT2041773 A IT 2041773A IT 2041773 A IT2041773 A IT 2041773A IT 979130 B IT979130 B IT 979130B
- Authority
- IT
- Italy
- Prior art keywords
- manufacture
- zener diode
- zener
- diode
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19722207654 DE2207654B2 (de) | 1972-02-18 | 1972-02-18 | Verfahren zum Herstellen einer Zenerdiode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT979130B true IT979130B (it) | 1974-09-30 |
Family
ID=5836353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT2041773A IT979130B (it) | 1972-02-18 | 1973-02-15 | Metodo per la fabbricazione di un diodo zener |
Country Status (5)
| Country | Link |
|---|---|
| AU (1) | AU463838B2 (de) |
| DE (1) | DE2207654B2 (de) |
| FR (1) | FR2172191B1 (de) |
| GB (1) | GB1364035A (de) |
| IT (1) | IT979130B (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7513161A (nl) * | 1975-11-11 | 1977-05-13 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleider- inrichting, en inrichting vervaardigd volgens de werkwijze. |
| DE2916114A1 (de) * | 1978-04-21 | 1979-10-31 | Hitachi Ltd | Halbleitervorrichtung |
| NL7907680A (nl) * | 1979-10-18 | 1981-04-22 | Philips Nv | Zenerdiode. |
| NL187942C (nl) * | 1980-08-18 | 1992-02-17 | Philips Nv | Zenerdiode en werkwijze ter vervaardiging daarvan. |
| FR2500855A1 (fr) * | 1981-02-27 | 1982-09-03 | Thomson Csf | Procede de dopage et de metallisation d'une zone superficielle d'un composant semi-conducteur et diode zener obtenue |
| US4441114A (en) * | 1981-12-22 | 1984-04-03 | International Business Machines Corporation | CMOS Subsurface breakdown zener diode |
| US4833509A (en) * | 1983-10-31 | 1989-05-23 | Burr-Brown Corporation | Integrated circuit reference diode and fabrication method therefor |
| JP2001352079A (ja) * | 2000-06-07 | 2001-12-21 | Nec Corp | ダイオードおよびその製造方法 |
| CN113206157A (zh) * | 2021-04-30 | 2021-08-03 | 中国振华集团永光电子有限公司（国营第八七三厂） | 体内击穿玻钝二极管及制造方法 |
-
1972
- 1972-02-18 DE DE19722207654 patent/DE2207654B2/de not_active Ceased
-
1973
- 1973-02-08 AU AU52003/73A patent/AU463838B2/en not_active Expired
- 1973-02-08 FR FR7305086A patent/FR2172191B1/fr not_active Expired
- 1973-02-15 IT IT2041773A patent/IT979130B/it active
- 1973-02-15 GB GB743173A patent/GB1364035A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2207654A1 (de) | 1973-08-30 |
| DE2207654B2 (de) | 1974-02-14 |
| AU463838B2 (en) | 1975-08-07 |
| FR2172191A1 (de) | 1973-09-28 |
| GB1364035A (en) | 1974-08-21 |
| FR2172191B1 (de) | 1978-04-14 |
| AU5200373A (en) | 1974-08-08 |
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